CN105356853A - Band-pass filtering Doherty amplifier and simulation design method - Google Patents
Band-pass filtering Doherty amplifier and simulation design method Download PDFInfo
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- CN105356853A CN105356853A CN201510723947.XA CN201510723947A CN105356853A CN 105356853 A CN105356853 A CN 105356853A CN 201510723947 A CN201510723947 A CN 201510723947A CN 105356853 A CN105356853 A CN 105356853A
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Abstract
The invention discloses a band-pass filtering Doherty amplifier with high efficiency and broadband harmonic suppression and a simulation design method. The Doherty amplifier comprises three layers of structures, namely a micro-strip circuit unit, a substrate and a metal ground layer, which are arranged from top to bottom in sequence, wherein a discrete component and a metallized through hole are loaded on the micro-strip circuit unit; the micro-strip circuit unit is formed by four parts, namely a quadrature coupler, two power amplifiers, a load modulation circuit and a power combiner. The quadrature coupler is a snowflake sheet unit and is capable of realizing band-pass filtering and any coupling factor and providing proper input power for two amplifiers to realize best load traction. Two power amplifiers are formed by an AB-type amplifier and a C-type amplifier. The load modulation circuit is a quarter-wavelength micro-strip line. According to the band-pass filtering Doherty amplifier, the band-pass filtering, the broadband harmonic suppression and improvement of the efficiency and the linearity can be simultaneously realized.
Description
Technical field
The present invention relates to the amplifier used in communication, particularly as this bandpass filtering Doherty amplifier and the emulation design method with high efficiency High Linear and the broadband harmonic suppression used in the radio communication of high transfer rate, high peak-to-average power ratio of LTE, WIMAX.
Background technology
Along with the develop rapidly of wireless communication technology, power amplifier have also been obtained development at full speed.It is widely used in various Wireless Telecom Equipment, and at radar, personal communication, navigation, plays an important role in the systems such as satellite communication.In order to reach energy-conservation and the demand of minimizing environmental pollution, green communications have become the key of industrial development.Power amplifier is the main power consumption original paper in communication system, and wherein in base station, the energy of 40%-60% is consumed by power amplifier, and the efficiency improving power amplifier can effectively energy-conservation and minimizing environmental pollution.The linearity of power amplifier directly determines the quality of communication system signal transmission, and miniaturization is also a key issue in communication system.So raise the efficiency the key becoming design power amplifier with the linearity and miniaturized system.General power amplifier is operated in category-A or AB class, realizes the compromise to efficiency and the linearity.In order to meet the linear requirements of communication system, often require that amplifier carries out back-off to reach required linearity index, but back-off can cause the sharply deterioration of efficiency.Thus produce a large amount of heats, make system energy consumption large, heat treatment is complicated, and area of dissipation is large, and unstable properties, has influence on the volume of whole system.Theory and the base station trend toward miniaturization of this and green low-carbon are disagreed.
In the mobile communication in modern times, along with the development of 3G, 4G, signal madulation mode becomes increasingly sophisticated, and in order to provide high transmission rate and broadband services, often adopt complicated coding modulation technique, such transmitted signal generally has higher peak-to-average force ratio.In order to meet such demand required power amplifier, there is height efficiency and the linearity.
In order to improve power amplifier linearity and efficiency, there is multiple linearization technique and improved efficiency technology at present.Wherein linearization technique has power back off technique, feed-forward technique, feedback technique and digital pre-distortion technology (DPD) etc.; Improved efficiency technology has envelope to eliminate and recovery technology (EER), envelop following technology (ET), non-linear element realize Linear magnifying technology in high (LINC) and Doherty technology etc.Wherein, the relative other technologies of Doherty power amplifier, there is mechanism simple, with low cost, easy realization, and the advantage that linear effect is less, due to the topological mechanism that a Doherty power amplifier is made up of a main amplifier and a booster amplifier, its main amplifier is operated in AB class, booster amplifier work C class.Appropriate control booster amplifier can make main amplifier be operated in peak efficiencies state in back-off district always.Such topological structure is extremely applicable to the modern wireless signal high-efficiency transfer of high peak-to-average power ratio, has therefore become the technology having commercial prospect in Modern wireless communication Amplifier Design most.
Mainly efficiency is concentrated on to the improvement of Doherty performance, the linearity or miniaturization before.Never propose a kind of method can improve efficiency simultaneously, the linearity and miniaturized system improve the performance of communication system.
Summary of the invention
The object of the invention is to overcome the merit point Doherty power amplifier such as tradition causes efficiency low due to hypotraction, and fill up Doherty power amplifier to raise the efficiency simultaneously, the linearity, with the blank of miniaturized system aspect, and provide a kind of the bandpass filtering Doherty amplifier and the emulation design method that possess high efficiency and broadband harmonic suppression.
Object of the present invention is solved by following technical measures:
Possess a bandpass filtering Doherty amplifier for high efficiency and broadband harmonic suppression, comprise the three-decker of arranging successively from top to bottom: ground floor is microstrip circuit unit, the second layer is substrate, and third layer is metal ground layer;
Described microstrip circuit unit is made up of orthocoupler, AB power-like amplifier, C power-like amplifier, load-modulate circuit, phase compensation unit, power combiner, signal shielding unit; Wherein three ports of orthocoupler are connected with the input of AB power-like amplifier and C power-like amplifier respectively with four ports, the output of load-modulate circuit and phase compensation unit, phase compensation unit is connected with the output of AB power-like amplifier and C power-like amplifier, AB power-like amplifier and C power-like amplifier link together by power combiner, and signal shielding unit is layered on the surrounding of microstrip circuit and is connected with metal ground layer by metallic vias.
Preferably, described orthocoupler is the micro-band orthocoupler of snowflake type sheet, comprises that four overlap, angle is the fan-shaped offset of microstrip patch unit of 90 degree, four impedance matching lines and four slits; The fan-shaped offset of microstrip patch unit that described four overlap by opsition dependent symmetric relation, angle is 90 degree is divided into two groups, and the trunnion axis of two fan-shaped offset of microstrip patch unit of first group is with vertical axes is all symmetrical and structure is consistent, and radius is
r 1, the trunnion axis of two fan-shaped offset of microstrip patch unit of second group is with vertical axes is all symmetrical and structure is consistent, and radius is
r 2, and two groups of fan-shaped offset of microstrip patch unit are connected mutually; There is equal space the left and right of each fan-shaped offset of microstrip patch unit, the handing-over line of two fan-shaped offset of microstrip patch unit that the center line of described four impedance matching lines is adjacent with position respectively overlaps, and each impedance matching line embeds two fan-shaped offset of microstrip patch unit that handing-over line overlaps accordingly; Described slit is extended internally by the scallop edge of four fan-shaped offset of microstrip patch unit respectively, and the center line of slit overlaps with fan-shaped center line.
Preferably, the shape of described four impedance matching lines is all consistent with size, is wide
w 1, length is
l 1+
l c , the right and left of every bar impedance matching line all has a width to be
w c gap.
Preferably, described slit is divided into two groups, and first group of slit lays respectively in two fan-shaped patch unit of first group, and its width is
w s , length is
l s2
; Second group of slit lays respectively in two fan-shaped patch unit of second group, and its width is
w s , length is
l s1
.
Preferably, described AB power-like amplifier and C power-like amplifier, by inputting, exporting micro-port line D1, D2, input, export capacitance
c1,
c5, input, output matching circuit, power amplifier chips M1, gate bias circuit and drain bias circuit are formed; Wherein input one end that micro-port line D1 is connected on input capacitance C1, input matching circuit is connected to the other end of input capacitance C1, gate bias circuit is connected with input matching circuit, input matching circuit is connected with output matching circuit by power amplifier chips M1, drain bias circuit is connected with output matching circuit, exports capacitance C5 and is connected with micro-port line D2 by output matching circuit.
Described input, output port line length are 5mm, and impedance is 50 ohm;
Described input matching circuit is by electric capacity
c2 and microstrip line mixing form;
Described output matching circuit is by electric capacity
c3,
c4 and microstrip line mixing form;
Described gate bias circuit is by quarter-wave microstrip line, pad, three gate protection resistance, and filtering decoupling capacitor is formed, and provides voltage from pad end to grid
v1;
Described drain bias circuit is made up of quarter-wave microstrip line, pad, filtering decoupling capacitor, provides voltage from pad end to drain electrode
v2;
Described power amplifier chips M1 model is MOSFETMW6S004NT1, the wherein drain bias voltage of Doherty amplifier
v2 is 28V, and drain bias electric current is the gate bias voltage that the difference of 50mA, AB power-like amplifier and C power-like amplifier is power amplifier chips M1
v1;
Described phase adjustment unit is made up of the microstrip line of a section 50 ohm;
The microstrip line that described load-modulate circuit is 50 ohm by one section of quarter-wave impedance is formed;
Described power combiner is directly connected with booster amplifier branch road end microstrip line by main amplifier branch road end, connects the microstrip line that one section of quarter-wave impedance is 35.3 ohm in junction.
Preferably, described signal shielding unit is made up of at edge metal-loaded via hole good conductor, metallization via hole adopts micro belt process to be fixed on substrate, substrate is dielectric material substrate, the dielectric material thickness that wherein Doherty power amplifier adopts is the FR4 material of 0.8mm, its dielectric constant is 4.4, and the dielectric material thickness that independent orthocoupler adopts is the RogersRO4003C material of 0.8mm, and its dielectric constant is 3.3.
Preferably, described metal ground layer is the metal ground layer being paved with good conductor.
A kind of emulation design method possessing the bandpass filtering Doherty amplifier of high efficiency and broadband harmonic suppression: first, according to required centre frequency, the relative dielectric constant of medium substrate, by the coupling factor needed for full-wave electromagnetic Simulation Software Design, there is the orthocoupler of harmonic restraining function; Then impedance matching is carried out with the input and output resistance of the Smith chart in circuit simulating software according to power amplifier chips M1 under centre frequency; Bamboo product AB power-like amplifier and a C power-like amplifier and load-modulate circuit and power combiner; Then full-wave electromagnetic simulation software is emulated in the s4p file importing circuit simulation simulation software obtained and carry out associative simulation.
In the present case, described bandpass filtering Doherty amplifier operation can be suppressed to triple-frequency harmonics at 1.8GHz, most effectively can reach 41.8%.The weak ratio of maximum adjacent channel only has-40.7dBc.
Compared with prior art, the beneficial effect of technical solution of the present invention is:
(1) the present invention proposes a kind of bandpass filtering Doherty amplifier possessing high efficiency and broadband harmonic suppression first, achieves the raising to efficiency of amplitude and the linearity, and has broadband harmonic inhibit feature and miniaturized amplifier.Be applicable to that very much there is high transfer rate, in the modern wireless communication systems of high peak-to-average power ratio.
(2) feature of the present invention also comprises: 1, export by regulating orthocoupler can realize any centre frequency, the arbitrarily coupling factor, and bandwidth harmonics restraint; 2, efficiency of amplitude can be improved, the linearity; 3, make system compact, be easy to integrated; 4, structure is simple, and cost is low.
Accompanying drawing explanation
Fig. 1 is embodiment of the present invention side structure schematic diagram.
Fig. 2 is embodiment of the present invention structured flowchart.
Fig. 3 is embodiment of the present invention ground floor upper strata orthocoupler micro-band overall structure schematic diagram.
Fig. 4 is embodiment of the present invention ground floor upper strata AB power-like amplifier and C power-like amplifier structure
Schematic diagram.
Fig. 5 is the amplitude response Comparative result figure of emulation and measurement when coupling factor is 3dB between embodiment of the present invention output port.
Fig. 6 is the phase response Comparative result figure of emulation and measurement when coupling factor is 3dB between embodiment of the present invention output port.
The broadband harmonic that Fig. 7 proposes for the embodiment of the present invention suppresses the S parameter comparison diagram of Doherty power amplifier and traditional Doherty power amplifier.
The broadband harmonic that Fig. 8 proposes for the embodiment of the present invention suppresses the efficiency comparative of Doherty power amplifier and traditional Doherty power amplifier to scheme.
The broadband harmonic suppression Doherty power amplifier that Fig. 9 proposes for the embodiment of the present invention compares comparison diagram with the adjacent channel of traditional Doherty power amplifier is weak.
Embodiment
Accompanying drawing, only for exemplary illustration, can not be interpreted as the restriction to this patent; In order to better the present embodiment is described, some parts of accompanying drawing have omission, zoom in or out, and do not represent the size of actual product;
To those skilled in the art, in accompanying drawing, some known features and explanation thereof may be omitted is understandable.Below in conjunction with drawings and Examples, technical scheme of the present invention is described further.
Shown in composition graphs 1 to Fig. 4, possess a bandpass filtering Doherty amplifier for high efficiency and broadband harmonic suppression, it is characterized in that, comprise the three-decker of arranging successively from top to bottom: ground floor is microstrip circuit unit 101, the second layer is substrate 102, and third layer is metal ground layer 103; Wherein ground floor microstrip circuit unit 101 is loaded with discrete component and metallization via hole.
Microstrip circuit unit 101 in a kind of bandpass filtering Doherty amplifier 200 possessing high efficiency and broadband harmonic suppression is made up of orthocoupler 201, AB power-like amplifier 202, C power-like amplifier 203, load-modulate circuit 204, phase compensation unit 205, power combiner 206 and signal shielding unit 207.Wherein three ports of orthocoupler 201 are connected with the input of AB power-like amplifier 202 and C power-like amplifier 203 respectively with four ports, load-modulate circuit 204 is connected on the output of phase compensation unit 205, phase compensation unit 205 is connected on AB power-like amplifier 202 and is connected and the output of C power-like amplifier 203, AB power-like amplifier 202 and C power-like amplifier 203 link together by power combiner 206, and signal shielding unit 207 is layered on the surrounding of microstrip circuit.
Orthocoupler 201 is micro-band orthocouplers of snowflake type sheet, comprise four overlap, angle be 90 degree fan-shaped offset of microstrip patch unit A1, A2, A3, A4, four impedance matching line B1, B2, B3, B4, four slits T1, T2, T3, T4; The fan-shaped offset of microstrip patch unit A1 that described four overlap by opsition dependent symmetric relation, angle is 90 degree, A2, A3, A4 are divided into two groups, two fan-shaped offset of microstrip patch unit A1 of first group, the trunnion axis of A3 and vertical axes are all symmetrical and structure is consistent, and radius is
r 1, two fan-shaped offset of microstrip patch unit A2 of second group, the trunnion axis of A4 and vertical axes are all symmetrical and structure is consistent, and radius is
r 2, and two groups of fan-shaped offset of microstrip patch unit are connected mutually; The handing-over line of two fan-shaped offset of microstrip patch unit that the center line of described four impedance matching lines B1, B2, B3, B4 is adjacent with position respectively overlaps, and each impedance matching line embeds between two fan-shaped offset of microstrip patch unit of handing-over line coincidence accordingly, there is equal space the left and right of every bar impedance matching line; Described slit T1, T2, T3, T4 are extended internally by four fan-shaped edges respectively, and the center line of slit overlaps with fan-shaped center line.
As in figure, the shape of four impedance matching lines B1, B2, B3, B4 is all consistent with size, is wide
w 1, length is
l 1+
l c .The right and left of every bar impedance matching line all has a width to be
w c , length is
l c gap.
Described slit T1, T2, T3, T4 are divided into two groups, and first group of slit is that T1, T3 are positioned on fan-shaped patch unit A1, A3, and its width is
w s , length is
l s2
; Second group of slit is that T2, T4 are positioned on fan-shaped patch unit A2, A4, and its width is
w s , length is
l s1
.
Described AB power-like amplifier 202 by inputting, exporting micro-port line D1, D2, inputs with C power-like amplifier 203, exports capacitance
c1
, C5, input, output matching circuit 302,303, power amplifier chips M1, gate bias circuit 303 and drain bias circuit 304 are formed.
In the present embodiment, input, output port line D1, D2 length are 5mm, and impedance is 50 ohm.
Described input matching circuit 301 is by high quality factor electric capacity
c2 and microstrip line mixing form, wherein electric capacity
c2 belows being connected on input matching circuit 301.
Described output matching circuit 302 is by high quality factor electric capacity
c3
, C4 and microstrip line mixing form, wherein electric capacity
c3
, C4 are connected on output, the below of match circuit 302.
Described gate bias circuit 303 is by quarter-wave microstrip line, pad, gate protection resistance
r1,
r2,
r3, filtering decoupling capacitor
c6,
c7,
c8 are formed, and provide voltage from pad end to grid
v1, wherein resistance
rinput matching circuit 301 is connected with quarter-wave microstrip line by 1, resistance
rquarter-wave microstrip line is connected with pad by 2, resistance
r3, filtering decoupling capacitor
c6,
c7,
c8 and be connected on pad.
Described drain bias circuit 304 is by quarter-wave microstrip line, pad, filtering decoupling capacitor
c6,
c7,
c8 are formed, and provide voltage from pad end to drain electrode
v2, wherein quarter-wave microstrip line is connected with pad, filtering decoupling capacitor
c6,
c7,
c8 are connected on and are connected on pad.
Described power amplifier chips M1 model is MOSFETMW6S004NT1, the wherein drain bias voltage of Doherty amplifier
v2 is 28V, and drain bias electric current is that 50mA, AB power-like amplifier 202 is the gate bias voltage of power amplifier chips M1 with the difference of C power-like amplifier 203
v1.
Described phase adjustment unit 204 is made up of the microstrip line of a section 50 ohm.
The microstrip line that described load-modulate circuit 205 is 50 ohm by one section of quarter-wave impedance is formed.
Described power combiner 206 is directly connected with booster amplifier branch road end microstrip line by main amplifier branch road end, connects the microstrip line that one section of quarter-wave impedance is 35.3 ohm in junction.
Described signal shielding unit 207 is made up of at edge metal-loaded via hole good conductor, metallization via hole adopts micro belt process fixing on substrate 102, substrate 102 is dielectric material substrate 102, the dielectric material thickness that wherein Doherty power amplifier adopts is the FR4 material of 0.8mm, its dielectric constant is 4.4, the dielectric material thickness that independent orthocoupler adopts is the RogersRO4003C material of 0.8mm, and its dielectric constant is 3.3.
Described metal ground layer 103 is for being paved with the metal ground layer 103 of good conductor.
The described design with the orthocoupler of arbitrarily coupling factor can realize different coupling factors by means of only the radii ratio changing adjacent fan-shaped offset of microstrip patch unit, harmonic restraining function is realized by the width and the degree of depth that change gap, micro-band impedance matching line both sides, regulate the degree of depth and the broadband of slit, realize the frequency that design is wanted.
Described bandpass filtering Doherty amplifier operation can be suppressed to triple-frequency harmonics at 1.8GHz, most effectively can reach 41.8%.The weak ratio of maximum adjacent channel only has-40.7dBc.
A kind of emulation design method possessing the bandpass filtering Doherty amplifier of high efficiency and broadband harmonic suppression: first, according to required centre frequency (this example is 1.8GHz), the relative dielectric constant of medium substrate, by coupling factor needed for full-wave electromagnetic Simulation Software Design one, then the orthocoupler with harmonic restraining function carries out impedance matching with the input and output resistance of the Smith chart in circuit simulating software according to power amplifier chips M1 under 1.8GHz.Bamboo product AB power-like amplifier and a C power-like amplifier and load-modulate circuit below and power combiner.Then full-wave electromagnetic simulation software is emulated in the s4p file importing circuit simulation simulation software obtained and carry out associative simulation.
The parameter of orthocoupler is:
l 1=5mm,
w 1=1.5mm,
θ 1=90
o,
θ 2=90
oabove parameter immobilizes, all the other parameters (
r 1 , R 2,
w s ,
l s1
,
l s2
,
l c ,
w c ) in different circuit, numeral is different.
The parameter of AB class and C power-like amplifier is as follows:
c1=100pF,
c5=100pF,
c6=30pF,
c7=10nF,
c8=10uF,
c9=30PF,
c10=10nF,
c11=10uF,
r1=10 Ω,
r2=1K Ω,
r3=10K Ω,
vmore than 2=28V parameter immobilizes, all the other parameters (
c2,
c3,
c4,
v1) can change in reality test.
With reference to Fig. 5 (the amplitude response Comparative result figure of emulation and measurement when coupling factor is 3dB between embodiment of the present invention output port) and Fig. 6 (the phase response Comparative result figure of emulation and measurement when coupling factor is 3dB between embodiment of the present invention output port), corresponding
r 1=
r 2=19mm,
w s =2mm,
l s1
=14.7mm,
l s2
=13,
w c =0.3mm,
l c =8mm, now, this coupler phase difference of output port between 1.64GHz to 1.9GHz is 90
o± 5 °, coupling factor S
31with S
21between gap be not more than 1dB.
The baseplate material used with reference to Fig. 5 and Fig. 6 is RogersRO4003C, and dielectric constant is 3.38, and substrate thickness is recorded by network analyzer under the true environment of 0.8mm.Can be found by emulation and test comparison figure above, emulate and the goodness of fit of measured curve higher.
With reference to Fig. 7 (broadband harmonic that the embodiment of the present invention proposes suppresses the S parameter comparison diagram of Doherty power amplifier and traditional Doherty power amplifier), now, the broadband harmonic proposed suppresses the centre frequency of Doherty power amplifier to be 1.8GHz, can realize triple-frequency harmonics to suppress, S parameter is S
11=-18.51dB, S
21=14.2dB.
With reference to Fig. 8 (broadband harmonic that the embodiment of the present invention proposes suppresses the efficiency comparative of Doherty power amplifier and traditional Doherty power amplifier to scheme), now, the broadband harmonic proposed suppresses the added efficiency at Doherty power amplifier centre frequency (1.8GHz) place to be 41.8%, and power output is 40dBm.The added efficiency at tradition Doherty power amplifier centre frequency (1.8GHz) place is 31.8%, and power output is 38.1dBm.
With reference to Fig. 9 (the broadband harmonic suppression Doherty power amplifier that the embodiment of the present invention proposes is weak in comparison diagram with the adjacent channel of traditional Doherty power amplifier), now, the broadband harmonic proposed suppresses the weak ratio of adjacent channel at Doherty power amplifier centre frequency (1.8GHz) place to be up to-40.7dBc.
The weak ratio of adjacent channel at tradition Doherty power amplifier centre frequency (1.8GHz) place is up to-34.9dBc
With reference to Fig. 7,8,9, corresponding
r 1=16.4mm,
r 2=17.4mm,
w s =2.7mm,
l s1
=11.8mm,
l s2
=11.8,
w c =0.25mm,
l c =6mm,
c2=3.3pF,
c3=2pF,
c4=2.7pF, AB power-like amplifier
v1=3.08V, C power-like amplifier
v1=1.5V, baseplate material used is FR4, and dielectric constant is 4.4, and substrate thickness is recorded by network analyzer and spectrum analyzer under the true environment of 0.8mm.
By measured good result, show that the solution of the present invention is practical.
Obviously, the explanation of above embodiment just understands method of the present invention and core concept thereof for helping.The above embodiment of the present invention is only for example of the present invention is clearly described, and is not the restriction to embodiments of the present invention.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here exhaustive without the need to also giving all execution modes.All any amendments done within the spirit and principles in the present invention, equivalent to replace and improvement etc., within the protection range that all should be included in the claims in the present invention.
Claims (8)
1. one kind possesses the bandpass filtering Doherty amplifier of high efficiency and broadband harmonic suppression, it is characterized in that, comprise the three-decker of arranging successively from top to bottom: ground floor is microstrip circuit unit (101), the second layer is substrate (102), and third layer is metal ground layer (103);
Described microstrip circuit unit (101) is made up of orthocoupler (201), AB power-like amplifier (202), C power-like amplifier (203), load-modulate circuit (204), phase compensation unit (205), power combiner (206), signal shielding unit (207), wherein three ports of orthocoupler (201) are connected with the input of AB power-like amplifier (202) and C power-like amplifier (203) respectively with four ports, load-modulate circuit (204) is connected with the output of phase compensation unit (205), phase compensation unit (205) is connected with the output of AB power-like amplifier (202) and C power-like amplifier (203), AB power-like amplifier (202) is connected with C power-like amplifier (203) by power combiner (206), signal shielding unit (207) is layered on the surrounding of microstrip circuit and is connected with metal ground layer (103) by metallic vias (102).
2. possesses the bandpass filtering Doherty amplifier of high efficiency and broadband harmonic suppression according to claim 1, it is characterized in that, described orthocoupler (201) is the micro-band orthocoupler of snowflake type sheet, comprises that four overlap, angle is the fan-shaped offset of microstrip patch unit (A1, A2, A3, A4) of 90 degree, four impedance matching lines (B1, B2, B3, B4) and four slits (T1, T2, T3, T4); The fan-shaped offset of microstrip patch unit (A1, A2, A3, A4) that described four overlap by opsition dependent symmetric relation, angle is 90 degree is divided into two groups, the trunnion axis of two fan-shaped offset of microstrip patch unit (A1, A3) of first group is with vertical axes is all symmetrical and structure is consistent, and radius is
r 1, the trunnion axis of two fan-shaped offset of microstrip patch unit (A2, A4) of second group is with vertical axes is all symmetrical and structure is consistent, and radius is
r 2, and two groups of fan-shaped offset of microstrip patch unit are connected mutually; There is equal space the left and right of each fan-shaped offset of microstrip patch unit, the handing-over line of two fan-shaped offset of microstrip patch unit that the center line of described four impedance matching lines (B1, B2, B3, B4) is adjacent with position respectively overlaps, and each impedance matching line embeds two fan-shaped offset of microstrip patch unit that handing-over line overlaps accordingly; Described slit (T1, T2, T3, T4) is extended internally by the scallop edge of four fan-shaped offset of microstrip patch unit respectively, and the center line of slit overlaps with fan-shaped center line.
3. possess the bandpass filtering Doherty amplifier of high efficiency and broadband harmonic suppression according to claim 2, it is characterized in that, the shape of described four impedance matching lines (B1, B2, B3, B4) is all consistent with size, is wide
w 1, length is
l 1+
l c , the right and left of every bar impedance matching line all has a width to be
w c gap.
4. possesses the bandpass filtering Doherty amplifier of high efficiency and broadband harmonic suppression according to claim 3, it is characterized in that, described slit (T1, T2, T3, T4) is divided into two groups, first group of slit (T1, T3) lays respectively on two fan-shaped patch unit (A1, A3) of first group, and its width is
w s , length is
l s2
; Second group of slit (T2, T4) lays respectively on two fan-shaped patch unit (A2, A4) of second group, and its width is
w s , length is
l s1
.
5. possesses the bandpass filtering Doherty amplifier of high efficiency and broadband harmonic suppression according to claim 1, it is characterized in that, described AB power-like amplifier (202) and C power-like amplifier (203), by inputting, exporting micro-port line D1, D2, input, export capacitance
c1,
c5, input, output matching circuit (301,302), power amplifier chips M1, gate bias circuit (303) and drain bias circuit (304) are formed; Wherein input micro-port line D1 and be connected on input capacitance
cone end of 1, input matching circuit (301) is connected to input capacitance
cthe other end of 1, gate bias circuit (303) is connected with input matching circuit (301), input matching circuit (301) is connected with output matching circuit (302) by power amplifier chips M1, and drain bias circuit (304) is connected with output matching circuit, exports capacitance
coutput matching circuit (302) is connected with micro-port line D2 by 5.
6. possesses the bandpass filtering Doherty amplifier of high efficiency and broadband harmonic suppression according to claim 1, it is characterized in that, described signal shielding unit (207) is made up of at edge metal-loaded via hole good conductor, metallization via hole adopts micro belt process to be fixed on substrate (102), substrate (102) is dielectric material substrate (102), the dielectric material thickness that wherein Doherty power amplifier adopts is the FR4 material of 0.8mm, its dielectric constant is 4.4, the dielectric material thickness that independent orthocoupler adopts is the RogersRO4003C material of 0.8mm, its dielectric constant is 3.3.
7. possess the bandpass filtering Doherty amplifier of high efficiency and broadband harmonic suppression according to claim 1, it is characterized in that, described metal ground layer (103) is for being paved with the metal ground layer (103) of good conductor.
8. the emulation design method possessing the bandpass filtering Doherty amplifier of high efficiency and broadband harmonic suppression described in an any one of claim 1 to 7: it is characterized in that, first, according to required centre frequency, the relative dielectric constant of medium substrate, by the coupling factor needed for full-wave electromagnetic Simulation Software Design, there is the orthocoupler of harmonic restraining function; Then impedance matching is carried out with the input and output resistance of the Smith chart in circuit simulating software according to power amplifier chips M1 under centre frequency; Bamboo product AB power-like amplifier and a C power-like amplifier and load-modulate circuit and power combiner; Then full-wave electromagnetic simulation software is emulated in the s4p file importing circuit simulation simulation software obtained and carry out associative simulation.
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| CN106533377A (en) * | 2016-11-30 | 2017-03-22 | 中山大学 | Power amplifier with multiple octaves and design method thereof |
| CN106603017A (en) * | 2016-11-16 | 2017-04-26 | 电子科技大学 | Harmonic inhibition power amplifier |
| CN112511122A (en) * | 2020-12-25 | 2021-03-16 | 中山大学 | Doherty power amplifier based on phase control and manufacturing method |
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| CN105356853B (en) | 2018-07-31 |
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