CN105355730A - Method for improving deep ultraviolet light emitting diode P type activation efficiency - Google Patents
Method for improving deep ultraviolet light emitting diode P type activation efficiency Download PDFInfo
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- CN105355730A CN105355730A CN201510905411.XA CN201510905411A CN105355730A CN 105355730 A CN105355730 A CN 105355730A CN 201510905411 A CN201510905411 A CN 201510905411A CN 105355730 A CN105355730 A CN 105355730A
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- chamber temperature
- activation efficiency
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- 238000000034 method Methods 0.000 title claims abstract description 33
- 230000004913 activation Effects 0.000 title claims abstract description 19
- 238000000137 annealing Methods 0.000 claims abstract description 30
- 239000000463 material Substances 0.000 claims abstract description 28
- 230000008569 process Effects 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 230000004888 barrier function Effects 0.000 claims abstract description 4
- 230000001681 protective effect Effects 0.000 claims description 12
- 230000004044 response Effects 0.000 claims description 5
- 230000001351 cycling effect Effects 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 229910019080 Mg-H Inorganic materials 0.000 abstract description 4
- 230000003213 activating effect Effects 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000001954 sterilising effect Effects 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
The invention relates to a method for improving deep ultraviolet light emitting diode P type activation efficiency, and relates to the technical field of production of light emitting diodes. epitaxial materials of a buffer layer, an unintentionally doped layer, a first type conducing layer, an active layer, an electron barrier layer, a second type conducting layer and an ohm contact layer are epitaxially formed on a substrate, and after MO source materials of a reaction chamber are closed, stepped annealing is performed in the reaction chamber. The method provided by the invention repeatedly achieves the state of activating holes through regularly improving and lowering reaction chamber temperature mainly in an epitaxial growth process, breaks Mg-H bonds in quantity, and effectively improves P type doped hole activation efficiency. The method increases the effective P type doping concentration of the ohm contact layer, obviously reduces working voltage, and obviously improves the light emitting efficiency of a light emitting diode.
Description
Technical field
The present invention relates to the production technical field of light-emitting diode, particularly improve the method for LED P-type activation efficiency.
Background technology
Along with the fast development of LED technology, deep-UV light-emitting diode becomes another big hot topic of light-emitting diode development.Deep-UV light-emitting diode has major application and is worth in fields such as illumination, sterilization, medical treatment, printing, biochemistry detection, highdensity information storage and secure communications.Deep ultraviolet wave-length coverage is between 100-280 nanometer, and adopting AlGaN material to work as active area materials is the optimal selection realizing deep ultraviolet LED component product.
In deep-UV light-emitting diode technical development process, due to deep-UV light-emitting diode primarily of AlGaN, AlN etc. three or five compounds of group form, the epitaxial growth obtaining better crystal mass has larger difficulty.Therefore, the research initial stage mainly concentrates on epitaxial material growth technical study.Be developed so far, epitaxial material growth can prepare three or five compounds of group such as crystal mass good AlGaN, AlN.But the characteristic that device exploitation is mainly limited to material itself at present causes its P type activation efficiency very low, thus cause the operating voltage of deep-UV light-emitting diode higher, and internal quantum efficiency is also lower.
Summary of the invention
The present invention seeks to solve the problem, proposing a kind of method improving deep-UV light-emitting diode P type activation efficiency, to improve the P type activation efficiency of light-emitting diode, improve deep-UV light-emitting diode efficiency and reduce operating voltage.
The inventive method is: on substrate, extension forms the epitaxial material of resilient coating, involuntary doped layer, the first type conductive layer, active layer, electronic barrier layer, Second-Type conductive layer and ohmic contact layer, after the MO source material of off-response room, in reative cell, carry out stepped annelaing, the step of stepped annelaing comprises:
Other MO source material of step one, off-response room, logical NH
3, H
2epitaxial material protective gas, high annealing reaction chamber temperature being reduced to 700 ~ 800 DEG C is interval, and keeps 2 ~ 20 minutes;
Step 2, logical N
2epitaxial material protective gas, process annealing reaction chamber temperature being reduced to 500 ~ 600 DEG C is interval, and keeps 0.5 ~ 6 minute;
Step 3, logical NH
3, H
2epitaxial material protective gas, high annealing reaction chamber temperature being increased to 700 ~ 800 DEG C is interval, and keeps 2 ~ 20 minutes;
Step 4, cycling is carried out to step 2 and step 3;
Step 5, logical N
2epitaxial material protective gas, is reduced to 500 ~ 600 DEG C by reaction chamber temperature, and keeps 1 minute.
So far the extension annealing conditions process that Mg activates is completed.
The present invention, mainly in epitaxial process, repeatedly reaches by regularly improving and reduce reaction chamber temperature the state activating hole, interrupts Mg-H key in large quantities, effectively improve the hole activation efficiency of P type doping.Add effective P type doping content of the ohmic contact layer of light-emitting diode, significantly reduce operating voltage, significantly improve the luminous efficiency of light-emitting diode.
The introducing of low temperature annealing process of the present invention, namely from high temperature anneal temperature interval 700 ~ 800 DEG C be cooled to cooling annealing 500 ~ 600 DEG C of intervals, reative cell adopts no hydrogen environment, H ion in the complex compound of doped source and the H be destroyed can be dissociated out from the nearly top layer of material, and drain from reative cell, effectively improve the activation efficiency of P type.
Due to deep ultraviolet properties of materials, the high annealing (700 ~ 800 DEG C) of P type doping adopts conventional constant temperature annealing, H key in the complex compound of doped source and H is not easily totally disrupted, but by the annealing temperature pulse of high annealing, cooling, cooling annealing, intensification repeatedly, can increase and again dynamics is destroyed to the H key in the doped source of remnants and the complex compound of H, and introducing low temperature annealing process, improve the activation efficiency of P type.
Further, the high annealing time in step one of the present invention is 2 ~ 20 minutes.The single high annealing time can not be too short.If adopt the high annealing of short period, the state effectively gathered to destroying Mg-H key can not be reached.
In described step 2, the process annealing time is 0.5 ~ 6 minute.Adopt the high annealing time long, the process annealing time is shorter, can effectively form the state breaking Mg-H key, can form again the effect of pulse activation, reach good annealing effect.
In described step one, be reduced to 780 DEG C at reaction chamber temperature, then keep 6 minutes.
In described step 2, in 190 seconds, reaction chamber temperature is reduced to 580 DEG C.
In described step 2, be keep 1 minute under the condition of 580 DEG C at reaction chamber temperature.
In described step 3, in 190 seconds, reaction chamber temperature is increased to 780 DEG C.
In described step 3, be keep 6 minutes under the condition of 780 DEG C at reaction chamber temperature.
More than the concrete technology consistent with embodiment.
Be 2 ~ 10 to the cycling periodicity of described step 2 and step 3.Cycle period is too many, and annealing time is partially long, and annealing effect can be deteriorated on the contrary.
Accompanying drawing explanation
Fig. 1 is the temperature and the annealing time graph of relation that adopt present invention process embodiment.
Fig. 2 is electric current and the voltage curve figure of the ultraviolet light-emitting diode adopting present invention process and prior art processes to make.
Fig. 3 is electric current and the relative power graph of relation of the ultraviolet light-emitting diode adopting present invention process and prior art processes to make.
Embodiment
One, processing technology:
Step one, provide an epitaxial substrate, adopt MOCVD in epitaxial substrate, form resilient coating, involuntary doped layer, the first type conductive layer, active layer, electronic barrier layer, Second-Type conductive layer, ohmic contact layer gradually.
Step 2, after epitaxial growth ohmic contact layer completes, other MO source material of off-response room, logical NH
3, H
2epitaxial material protective gas; Then, reaction chamber temperature is reduced to the high annealing interval of 780 DEG C, and stops 6 minutes.
Step 3, logical N
2epitaxial material protective gas, reaction chamber temperature is interval by 780 DEG C of process annealings being reduced to 580 DEG C within 3 points of 10 second times, and stops 1 minute.
Step 4, logical NH3, H2 epitaxial material protective gas, reaction chamber temperature is interval by 580 DEG C of high annealings being increased to 780 DEG C within 3 points of 10 second times, and stops 6 minutes;
Step 3 and four 2 cycles of operation are carried out in circulation.
Step 5, logical N
2epitaxial material protective gas, reaction chamber temperature is reduced to 580 DEG C, and stops 1 minute.
So far the extension annealing conditions process that Mg activates is completed.As shown in Figure 1.
Two, verification the verifying results:
From Fig. 2,3: adopt light-emitting diode manufactured after present invention process to have clear improvement: 1, voltage has reduction (ohmic contact and series resistance, so voltage obviously reduces; 2, brightness is improved (effective hole concentration increases, and current expansion effect also becomes better, and brightness significantly improves).
Claims (7)
1. one kind is improved the method for deep-UV light-emitting diode P type activation efficiency, be taken at extension on substrate and form the epitaxial material of resilient coating, involuntary doped layer, the first type conductive layer, active layer, electronic barrier layer, Second-Type conductive layer and ohmic contact layer, after the MO source material of off-response room, in reative cell, carry out stepped annelaing, it is characterized in that the step of stepped annelaing comprises:
Other MO source material of step one, off-response room, logical NH
3, H
2epitaxial material protective gas, high annealing reaction chamber temperature being reduced to 700 ~ 800 DEG C is interval, and keeps 2 ~ 20 minutes;
Step 2, logical N
2epitaxial material protective gas, process annealing reaction chamber temperature being reduced to 500 ~ 600 DEG C is interval, and keeps 0.5 ~ 6 minute;
Step 3, logical NH
3, H
2epitaxial material protective gas, high annealing reaction chamber temperature being increased to 700 ~ 800 DEG C is interval, and keeps 2 ~ 20 minutes;
Step 4, cycling is carried out to step 2 and step 3;
Step 5, logical N
2epitaxial material protective gas, is reduced to 500 ~ 600 DEG C by reaction chamber temperature, and keeps 1 minute.
2. improve the method for deep-UV light-emitting diode P type activation efficiency according to claim 1, it is characterized in that: in described step one, be reduced to 780 DEG C at reaction chamber temperature, then keep 6 minutes.
3. improve the method for deep-UV light-emitting diode P type activation efficiency according to claim 2, it is characterized in that: in described step 2, in 190 seconds, reaction chamber temperature is reduced to 580 DEG C.
4. improving the method for deep-UV light-emitting diode P type activation efficiency according to claim 3, it is characterized in that: in described step 2, is keep 1 minute under the condition of 580 DEG C at reaction chamber temperature.
5. improve the method for deep-UV light-emitting diode P type activation efficiency according to claim 4, it is characterized in that: in described step 3, in 190 seconds, reaction chamber temperature is increased to 780 DEG C.
6. improving the method for deep-UV light-emitting diode P type activation efficiency according to claim 5, it is characterized in that: in described step 3, is keep 6 minutes under the condition of 780 DEG C at reaction chamber temperature.
7. improve the method for deep-UV light-emitting diode P type activation efficiency according to claim 1, it is characterized in that: be 2 ~ 10 to the cycling periodicity of described step 2 and step 3.
Priority Applications (1)
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|---|---|---|---|
| CN201510905411.XA CN105355730B (en) | 2015-12-10 | 2015-12-10 | A kind of method for improving deep-UV light-emitting diode p-type activation efficiency |
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| CN201510905411.XA CN105355730B (en) | 2015-12-10 | 2015-12-10 | A kind of method for improving deep-UV light-emitting diode p-type activation efficiency |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108417671A (en) * | 2018-01-30 | 2018-08-17 | 华灿光电(苏州）有限公司 | A kind of preparation method and epitaxial wafer of the epitaxial wafer of light emitting diode |
| CN109273568A (en) * | 2018-08-22 | 2019-01-25 | 华灿光电（浙江）有限公司 | A kind of gallium nitride based LED epitaxial slice and preparation method thereof |
| CN112259645A (en) * | 2020-09-01 | 2021-01-22 | 华灿光电（浙江）有限公司 | Growth method of light emitting diode epitaxial wafer |
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| CN101176213A (en) * | 2005-05-09 | 2008-05-07 | 罗姆股份有限公司 | Method of producing nitride semiconductor element |
| US20100219394A1 (en) * | 2007-08-31 | 2010-09-02 | Lattice Power (Jiangxi) Corporation | Method for fabricating a low-resistivity ohmic contact to a p-type iii-v nitride semiconductor material at low temperature |
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| CN103021844A (en) * | 2011-09-26 | 2013-04-03 | 比亚迪股份有限公司 | Epitaxial wafer annealing method |
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2015
- 2015-12-10 CN CN201510905411.XA patent/CN105355730B/en active Active
Patent Citations (4)
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| CN101176213A (en) * | 2005-05-09 | 2008-05-07 | 罗姆股份有限公司 | Method of producing nitride semiconductor element |
| US20100219394A1 (en) * | 2007-08-31 | 2010-09-02 | Lattice Power (Jiangxi) Corporation | Method for fabricating a low-resistivity ohmic contact to a p-type iii-v nitride semiconductor material at low temperature |
| JP2012204362A (en) * | 2011-03-23 | 2012-10-22 | Sharp Corp | Method of manufacturing nitride semiconductor light-emitting element |
| CN103021844A (en) * | 2011-09-26 | 2013-04-03 | 比亚迪股份有限公司 | Epitaxial wafer annealing method |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108417671A (en) * | 2018-01-30 | 2018-08-17 | 华灿光电(苏州）有限公司 | A kind of preparation method and epitaxial wafer of the epitaxial wafer of light emitting diode |
| CN108417671B (en) * | 2018-01-30 | 2020-04-07 | 华灿光电(苏州）有限公司 | Preparation method of epitaxial wafer of light emitting diode and epitaxial wafer |
| CN109273568A (en) * | 2018-08-22 | 2019-01-25 | 华灿光电（浙江）有限公司 | A kind of gallium nitride based LED epitaxial slice and preparation method thereof |
| CN109273568B (en) * | 2018-08-22 | 2020-04-14 | 华灿光电（浙江）有限公司 | Gallium nitride-based light emitting diode epitaxial wafer and manufacturing method thereof |
| CN112259645A (en) * | 2020-09-01 | 2021-01-22 | 华灿光电（浙江）有限公司 | Growth method of light emitting diode epitaxial wafer |
| CN112259645B (en) * | 2020-09-01 | 2021-11-05 | 华灿光电（浙江）有限公司 | Growth method of light emitting diode epitaxial wafer |
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