CN105355710A - Processing technology for solar cell piece - Google Patents
Processing technology for solar cell piece Download PDFInfo
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- CN105355710A CN105355710A CN201510698101.5A CN201510698101A CN105355710A CN 105355710 A CN105355710 A CN 105355710A CN 201510698101 A CN201510698101 A CN 201510698101A CN 105355710 A CN105355710 A CN 105355710A
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- solar battery
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- 238000012545 processing Methods 0.000 title claims abstract description 18
- 238000005516 engineering process Methods 0.000 title abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 98
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 97
- 239000010703 silicon Substances 0.000 claims abstract description 96
- 239000002699 waste material Substances 0.000 claims abstract description 94
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 67
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 67
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 54
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 49
- 239000004411 aluminium Substances 0.000 claims abstract description 48
- 229910052709 silver Inorganic materials 0.000 claims abstract description 43
- 239000004332 silver Substances 0.000 claims abstract description 43
- 238000000034 method Methods 0.000 claims abstract description 42
- 239000007788 liquid Substances 0.000 claims abstract description 40
- 238000004519 manufacturing process Methods 0.000 claims abstract description 34
- 230000008569 process Effects 0.000 claims abstract description 31
- 238000007650 screen-printing Methods 0.000 claims abstract description 21
- 239000011521 glass Substances 0.000 claims abstract description 14
- 238000005245 sintering Methods 0.000 claims abstract description 11
- 238000001039 wet etching Methods 0.000 claims abstract description 10
- 239000002253 acid Substances 0.000 claims description 48
- 239000000243 solution Substances 0.000 claims description 42
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 38
- 238000009792 diffusion process Methods 0.000 claims description 27
- 239000002002 slurry Substances 0.000 claims description 23
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 19
- 238000003754 machining Methods 0.000 claims description 17
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 16
- 229910017604 nitric acid Inorganic materials 0.000 claims description 16
- 238000004140 cleaning Methods 0.000 claims description 14
- 239000000203 mixture Substances 0.000 claims description 14
- 210000002268 wool Anatomy 0.000 claims description 13
- 239000012670 alkaline solution Substances 0.000 claims description 12
- 238000003475 lamination Methods 0.000 claims description 12
- 238000002360 preparation method Methods 0.000 claims description 12
- 239000000126 substance Substances 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- 239000002245 particle Substances 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- 238000000227 grinding Methods 0.000 claims description 8
- 235000008216 herbs Nutrition 0.000 claims description 8
- 238000003801 milling Methods 0.000 claims description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 8
- 239000006117 anti-reflective coating Substances 0.000 claims description 7
- 229910003978 SiClx Inorganic materials 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 230000002950 deficient Effects 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 238000003854 Surface Print Methods 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 239000002994 raw material Substances 0.000 abstract description 6
- 238000003912 environmental pollution Methods 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 abstract 2
- 238000007747 plating Methods 0.000 abstract 1
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical group [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 15
- 230000000694 effects Effects 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 10
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 7
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 6
- 239000013078 crystal Substances 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- 238000004064 recycling Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 125000004437 phosphorous atom Chemical group 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000011068 loading method Methods 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 230000001172 regenerating effect Effects 0.000 description 2
- 239000002910 solid waste Substances 0.000 description 2
- 238000012795 verification Methods 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 239000010956 nickel silver Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229920005596 polymer binder Polymers 0.000 description 1
- 239000002491 polymer binding agent Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 102220043159 rs587780996 Human genes 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- -1 silver ions Chemical class 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a processing technology for a solar cell piece, and the processing technology can lower production cost, and reduce waste discharge in a production process. The processing technology comprises the steps of silicon wafer detecting, surface texturing, diffusing and junction making, phosphorosilicate glass removal, wet etching, antireflection film plating, silk-screen printing and rapid sintering. Various kinds of waste liquid and unqualified solar cell pieces generated in the production process of the solar battery pieces are recycled, so that the environmental pollution caused by the large amount of waste liquid discharge and the destroy of the unqualified solar cell pieces is avoided, meanwhile, recycled silicon wafers, silver-coated copper powder and aluminium paste can be directly supplied to the solar cell piece production lines, so that the reuse of the waste liquid is realized, and the generation of the waste is reduced as well; therefore, the processing technology is more environment-friendly, and capable of greatly reducing the usage amount of the raw materials in the processing process of the solar cell pieces, and the production cost of the solar cell pieces is reduced consequently. The processing technology is suitable for being promoted and applied in the solar cell fields.
Description
Technical field
The present invention relates to area of solar cell, especially a kind of solar cell machining process.
Background technology
Along with society and economic develop rapidly, the needing of the energy increases day by day, and fossil energy increasingly exhausted and the pollution caused to biological environment, society and economic sustainable development in serious threat.Therefore, in the urgent need to adopting regenerative resource to substitute.Solar energy, as a kind of inexhaustible green regenerative energy sources, has worldwide obtained and has paid close attention to widely.
Solar cell principle is mainly matrix with Semiconducting Silicon Materials, utilizing diffusion technology to mix impurity in silicon crystal: when mixing the impurity such as boron, phosphorus, will there is a hole in silicon crystal, forms n-type semiconductor; Equally, after mixing phosphorus atoms, just have an electronics in silicon crystal, form p-type semiconductor, p-type semiconductor and n-type semiconductor are combined together to form pn and tie, when after solar light irradiation silicon crystal, in pn knot, the hole of n-type semiconductor is moved toward p-type area, and the electronics in p-type area moves toward n-type area, thus forms the electric current from n-type area to p-type area, in pn knot, form electrical potential difference, which forms solar cell.
---surface wool manufacturing---diffusion---dephosphorization silex glass---wet etching---coated with antireflection film---silk screen printing---Fast Sintering etc. that the processing technology of solar battery sheet is divided into silicon chip to detect.Be specifically described as follows:
One, silicon chip detects
Silicon chip is the carrier of solar battery sheet, and the quality of Si wafer quality directly determines the height of solar battery sheet conversion efficiency, therefore needs to detect supplied materials silicon chip.This operation is mainly used to carry out on-line measurement to some technical parameters of silicon chip, and these parameters mainly comprise silicon chip surface irregularity degree, minority carrier life time, resistivity, P/N type and micro-crack etc.This group equipment divides automatic loading/unloading, chip transmission, system combination part and four detection modules.Wherein, photovoltaic silicon wafer detector detects silicon chip surface irregularity degree, detects the apparent parameter such as size and diagonal of silicon chip simultaneously; Microcrack zone module is used for detecting the internal tiny crack of silicon chip; Also have two in addition and detect module, the main test silicon wafer volume resistivity of one of them on-line testing module and silicon chip type, another module is for detecting the minority carrier life time of silicon chip.Before carrying out minority carrier life time and Resistivity testing, need first to detect the diagonal of silicon chip, micro-crack, and the damaged silicon chip of automatic rejection.Silicon chip checkout equipment can auto loading and unloading piece, and defective item can be put into fixed position, thus improves precision and efficiency of detecting.
Two, surface wool manufacturing
The preparation of monocrystalline silicon suede is the anisotropic etch utilizing silicon, and forming millions of four sides side's cones at every square centimeter of silicon face is also pyramid structure.Due to the multiple reflections of incident light on surface and refraction, add the absorption of light, improve short circuit current and the conversion efficiency of battery.The anisotropic etchant of silicon prepares matte silicon with the alkaline solution of heat usually, after corrosion matte, carries out general chemical cleaning.The silicon chip prepared through surface all should not be stored for a long time in water, with soil resistant, and should diffusion as early as possible.
Three, diffusion
Solar cell needs a large-area PN junction to realize the conversion of luminous energy to electric energy, and diffusion furnace is the special equipment manufacturing solar cell PN junction.Tubular diffusion furnace is primarily of four major part composition such as the upper download part of quartz boat, exhaust air chamber, oven body part and gas holder part.The general phosphorus oxychloride liquid source of using of diffusion is as diffuse source.P-type silicon sheet is placed in the quartz container of tubular diffusion furnace, under 850---900 celsius temperature, uses nitrogen to bring phosphorus oxychloride into quartz container, reacted by phosphorus oxychloride and silicon chip, obtain phosphorus atoms.Through certain hour, phosphorus atoms enters the superficial layer of silicon chip from surrounding, and by the space between silicon atom to the diffusion of silicon chip internal penetration, defines the interface of N type semiconductor and P type semiconductor, namely PN junction.The PN junction uniformity that this technique is made is good, and the inhomogeneities of square resistance is less than 10, and minority carrier life time can be greater than 10ms.To manufacture PN junction be that solar cell produces substantially the most also is the operation of most critical.Because the formation of PN junction just, just making electronics and hole not return original place after flowing, material is thus formed electric current, drawn by electric current with wire, is exactly direct current.
Four, dephosphorization silex glass
This technique is used in solar battery sheet manufacturing process, also namely silicon chip is put by chemical corrosion method and soak in an acidic solution, make it produce chemical reaction and generate the network of solubility and thing, with one deck phosphorosilicate glass formed at silicon chip surface after removing diffusion.
Five, wet etching
Due in diffusion process, spread back-to-back even if adopt, all surface of silicon chip comprises edge and all inevitably will spread phosphorus.Light induced electron collected by the front of PN junction can have the region of phosphorus to flow to the back side of PN junction along edge-diffusion, and causes short circuit.Therefore, must etch the doped silicon of solar cell periphery, to remove the PN junction of battery edge.Usual employing wet etching technique completes this technique.
Six, coated with antireflection film
The reflectivity on polished silicon surface is 35%, in order to reduce surface reflection, improves the conversion efficiency of battery, needs deposition one deck silicon nitride anti-reflecting film.In industrial production, the normal PECVD device that adopts prepares antireflective coating.PECVD and plasma enhanced chemical vapor deposition.Its know-why utilizes low temperature plasma to make energy source, sample is placed on the negative electrode of glow discharge under low pressure, glow discharge is utilized to make sample be warmed up to predetermined temperature, then appropriate reacting gas SiH4 and NH3 is passed into, gas, through series of chemical and plasma reaction, forms solid film and silicon nitride film at sample surfaces.Generally, use the film thickness of the process deposits of this plasma enhanced chemical vapor deposition at about 70nm.The film of such thickness has the functional of optics.Utilize film interference principle, the reflection of light can be made greatly to reduce, short circuit current and the output of battery are just increased considerably, and efficiency also has suitable raising.
Seven, silk screen printing
Solar cell, after the operations such as making herbs into wool, diffusion and PECVD, has made PN junction, can generation current under light illumination, in order to the electric current that will produce is derived, needs on battery surface, make positive and negative two electrodes.The technique manufacturing electrode is a lot, and silk screen printing makes the most general a kind of production technology of solar cel electrode at present.Silk screen printing adopts the mode of impression by predetermined graphic printing on substrate, and this equipment prints three parts by the printing of cell backside silver aluminium paste, the printing of cell backside aluminium paste and cell front side silver paste and forms.Its operation principle is: utilize silk screen visuals mesh through slurry, applies certain pressure with scraper at the slurry position of silk screen, moves towards the silk screen other end simultaneously.Ink is expressed on substrate from the mesh of visuals by scraper in movement.Viscous effect due to slurry makes trace set within the specific limits, and printing middle scraper linearly contacts with substrate with screen printing forme all the time, and contact wire moves with scraper and mobile, thus completes print stroke.
Eight, Fast Sintering
Silicon chip after silk screen printing, can not directly use, and through sintering furnace Fast Sintering, need be burnt by organic binder resin, remaining almost pure, due to nature of glass effect closely sealed silver electrode on silicon chip.When silver electrode and crystalline silicon reach eutectic temperature in temperature, crystalline silicon atom is dissolved in certain proportion in the silver electrode material of melting and is gone, thus form the ohmic contact of upper/lower electrode, improve open circuit voltage and fill factor, curve factor two key parameters of cell piece, make it have resistance characteristic, to improve the conversion efficiency of cell piece.
Sintering furnace is divided into presintering, sintering, cooling down three phases.Pre-sintered state object makes the polymer binder in slurry decompose, burn, and this phase temperature slowly rises; Complete various physical-chemical reaction in sintered body in the sintering stage, form resistive film structure, make it really have resistance characteristic, this phase temperature reaches peak value; In the cooling down stage, glass cools cured for solidification, makes resistive film structure adhere to regularly on substrate.
There is following problem in the processing technology of above-mentioned solar battery sheet: can produce a large amount of alkaline waste liquors utilizing the alkaline solution of heat to prepare in matte silicon process in actual use, a large amount of acid waste liquids can be produced in dephosphorization silex glass process, a large amount of hydrofluoric acid waste liquid and nitric acid waste can be produced in wet etching process, at present, for the process of these waste liquids be mostly adopt acid-base neutralization process after directly emit, cause the production cost of solar battery sheet higher, not only cause the waste of raw material, simultaneously also can to environment, not environmentally.
In addition, the life cycle of solar battery sheet is generally 25 years, when transformation efficiency is reduced to a certain degree, solar battery sheet lost efficacy becomes substandard solar cell sheet, need to scrap and upgrade qualified solar battery sheet, generally, solar energy is regarded as the minimum energy of a kind of refuse generation, can not produce environmentally harmful refuse in the use procedure of assembly, but the solid waste that solar battery sheet scraps rear generation can not be ignored.After the year two thousand twenty, the solid waste of the solar cell of China there will be and increases substantially, and accumulative discarded amount also increases gradually, and the process of solar cell is disposed and recycled will become an important environmental protection subject.Simultaneously, because various reason can produce a large amount of substandard solar cell sheets in the production process of solar battery sheet, at present, it is mostly the mode adopting concentrated destruction for the substandard solar cell sheet produced in the substandard solar cell sheet lost efficacy after use and production process, the material that solar battery sheet mainly contains is silicon, silver, aluminium etc., silicon, silver, aluminium is all raw material required in solar battery sheet production process, if directly substandard solar cell sheet is directly destroyed, not only can cause raw-material huge waste, simultaneously, cell piece residue after destruction also can produce environment and pollute, not environmentally.
Summary of the invention
Technical problem to be solved by this invention is to provide and a kind ofly can reduces production cost and can reduce the solar cell machining process of waste discharge in production process.
The technical solution adopted for the present invention to solve the technical problems is: this solar cell machining process, comprises the following steps:
A, to need processing silicon chip detect, remove defective silicon chip;
B, the qualified silicon chip through detecting is put into alkaline solution and carried out surface wool manufacturing process, and alkaline waste liquor remaining after making herbs into wool process is collected;
C, the silicon chip of making herbs into wool process is put into diffusion facilities carry out diffusion process;
D, the silicon chip through diffusion process is put into acid solution carry out the process of dephosphorization silex glass, and acid waste liquid remaining after the process of dephosphorization silex glass is collected;
E, wet etching treatment is carried out to the silicon chip obtained after diffusion; First use hydrofluoric acid each surface to the silicon chip obtained after diffusion carry out rinse and hydrofluoric acid waste liquid remaining after rinse collected, by obtain in step D go aluminium solar battery sheet to clean after; Then silicon chip is put into salpeter solution carry out etching and the nitric acid waste of post-etch residue is collected, then with alkaline solution the silicon chip after etching cleaned and alkaline solution remaining after cleaning is collected, finally utilizing pure water to clean silicon chip and carry out drying and process;
F, PECVD device is utilized to prepare antireflective coating at the silicon chip surface through wet etching treatment;
G, will be coated with antireflective coating silicon chip adopt silk screen printing mode silicon chip upper and lower surface print positive and negative electrode;
H, obtain solar battery sheet by putting into after agglomerating plant carries out sintering processes through the silicon chip of silk screen printing;
I, underproof solar battery sheet is put into the part aluminium lamination that collected alkaline waste liquor removes solar battery sheet aluminium back surface field, again the substandard solar cell sheet soaked through alkaline waste liquor is put into the residue aluminium lamination that collected acid waste liquid removes solar battery sheet and obtain aluminium solar battery sheet and aluminum bearing waste, aluminum bearing waste is converted into aluminium oxide by chemical mode and then for the preparation of electronic aluminum paste, described electronic aluminum paste is used for the slurry of silk screen printing in step G; Go aluminium solar battery sheet after cleaning, being immersed in going the silver on aluminium solar battery sheet surface to leach in collected nitric acid waste, obtaining silver-colored solar battery sheet and argentiferous acid solution; The silicon nitride anti-reflection layer that collected hydrofluoric acid waste liquid removes silver-colored solar battery sheet table is put into by removing silver-colored solar battery sheet, obtain pure silicon chip after obtaining the cleaning of denitrification SiClx solar battery sheet, described silicon chip is processed to qualified solar battery sheet after steps A to H; Add copper powder in argentiferous acid solution and make silver-coated copper powder for the preparation of electric slurry, described electric slurry is used for the slurry of silk screen printing in step G.
Be further, adding copper powder in described argentiferous acid solution, to make the concrete grammar of silver-coated copper powder as described below: in argentiferous acid solution, add copper powder obtain solidliquid mixture, the weight ratio of described argentiferous acid solution and copper powder is 1.5 ~ 3, and circular grinding in solidliquid mixture suction milling apparatus can be obtained silver-coated copper powder in 20 ~ 50 minutes.
Further, the weight ratio of described argentiferous acid solution and copper powder is 2.
Further, the particle diameter of described copper powder is 2 ~ 3 microns.
Further, in described solidliquid mixture suction milling apparatus, the time of circular grinding is 30 minutes.
Further, the temperature of described argentiferous acid solution is 20 DEG C.
Further, in described step B, collected alkaline waste liquor concentration is 5%.
Further, in described step D, collected acid waste liquid concentration is 5%.
Further, in described step e, collected hydrofluoric acid waste liquid concentration is 0.5%.
Further, in described step e, collected nitric acid waste concentration is 1.5%.
The invention has the beneficial effects as follows: a large amount of alkaline waste liquors of this solar cell machining process by producing in the course of processing, acid waste liquid, hydrofluoric acid waste liquid, nitric acid waste collects, the part aluminium lamination that collected alkaline waste liquor removes solar battery sheet aluminium back surface field is put into by scrapping the substandard solar cell sheet produced in inefficacy and production process, again the substandard solar cell sheet soaked through alkaline waste liquor is put into the residue aluminium lamination that collected acid waste liquid removes solar battery sheet and obtain aluminium solar battery sheet and aluminum bearing waste, aluminum bearing waste is converted into aluminium oxide by chemical mode and then for the preparation of electronic aluminum paste, described electronic aluminum paste is used for the slurry of silk screen printing, go aluminium solar battery sheet after cleaning, being immersed in going the silver on aluminium solar battery sheet surface to leach in collected nitric acid waste, obtaining silver-colored solar battery sheet and argentiferous acid solution, the silicon nitride anti-reflection layer that collected hydrofluoric acid waste liquid removes silver-colored solar battery sheet table is put into by removing silver-colored solar battery sheet, pure silicon chip is obtained after obtaining the cleaning of denitrification SiClx solar battery sheet, described silicon chip can be reused for processing raw material of solar battery sheet, add copper powder in argentiferous acid solution and make silver-coated copper powder for the preparation of electric slurry, described electric slurry is used for the slurry of silk screen printing, the various waste liquids produced in this technology utilization solar battery sheet production process are for recycling the substandard solar cell sheet scrapped and produce in inefficacy and production process, not only avoid a large amount of discharging of waste liquid and substandard solar cell sheet destroys the environmental pollution caused, the silicon chip simultaneously reclaimed, silver-coated copper powder, aluminium paste can directly be supplied to solar cell slice assembly line, both the recycling of waste liquid had been accomplished, also reduce the generation of discarded object simultaneously, environmental protection is more utilized to produce, greatly can reduce the use amount of solar battery sheet course of processing Raw, thus reduce the production cost of solar battery sheet.
Embodiment
This solar cell machining process, comprises the following steps:
A, to need processing silicon chip detect, remove defective silicon chip;
B, the qualified silicon chip through detecting is put into alkaline solution and carried out surface wool manufacturing process, and alkaline waste liquor remaining after making herbs into wool process is collected;
C, the silicon chip of making herbs into wool process is put into diffusion facilities carry out diffusion process;
D, the silicon chip through diffusion process is put into acid solution carry out the process of dephosphorization silex glass, and acid waste liquid remaining after the process of dephosphorization silex glass is collected;
E, wet etching treatment is carried out to the silicon chip obtained after diffusion; First use hydrofluoric acid each surface to the silicon chip obtained after diffusion carry out rinse and hydrofluoric acid waste liquid remaining after rinse collected, by obtain in step D go aluminium solar battery sheet to clean after; Then silicon chip is put into salpeter solution carry out etching and the nitric acid waste of post-etch residue is collected, then with alkaline solution the silicon chip after etching cleaned and alkaline solution remaining after cleaning is collected, finally utilizing pure water to clean silicon chip and carry out drying and process;
F, PECVD device is utilized to prepare antireflective coating at the silicon chip surface through wet etching treatment;
G, will be coated with antireflective coating silicon chip adopt silk screen printing mode silicon chip upper and lower surface print positive and negative electrode;
H, obtain solar battery sheet by putting into after agglomerating plant carries out sintering processes through the silicon chip of silk screen printing;
I, underproof solar battery sheet is put into the part aluminium lamination that collected alkaline waste liquor removes solar battery sheet aluminium back surface field, again the substandard solar cell sheet soaked through alkaline waste liquor is put into the residue aluminium lamination that collected acid waste liquid removes solar battery sheet and obtain aluminium solar battery sheet and aluminum bearing waste, aluminum bearing waste is converted into aluminium oxide by chemical mode and then for the preparation of electronic aluminum paste, described electronic aluminum paste is used for the slurry of silk screen printing in step G; Go aluminium solar battery sheet after cleaning, being immersed in going the silver on aluminium solar battery sheet surface to leach in collected nitric acid waste, obtaining silver-colored solar battery sheet and argentiferous acid solution; The silicon nitride anti-reflection layer that collected hydrofluoric acid waste liquid removes silver-colored solar battery sheet table is put into by removing silver-colored solar battery sheet, obtain pure silicon chip after obtaining the cleaning of denitrification SiClx solar battery sheet, described silicon chip is processed to qualified solar battery sheet after steps A to H; Add copper powder in argentiferous acid solution and make silver-coated copper powder for the preparation of electric slurry, described electric slurry is used for the slurry of silk screen printing in step G.
The a large amount of alkaline waste liquors of this solar cell machining process by producing in the course of processing, acid waste liquid, hydrofluoric acid waste liquid, nitric acid waste collects, the part aluminium lamination that collected alkaline waste liquor removes solar battery sheet aluminium back surface field is put into by scrapping the substandard solar cell sheet produced in inefficacy and production process, again the substandard solar cell sheet soaked through alkaline waste liquor is put into the residue aluminium lamination that collected acid waste liquid removes solar battery sheet and obtain aluminium solar battery sheet and aluminum bearing waste, aluminum bearing waste is converted into aluminium oxide by chemical mode and then for the preparation of electronic aluminum paste, described electronic aluminum paste is used for the slurry of silk screen printing, go aluminium solar battery sheet after cleaning, being immersed in going the silver on aluminium solar battery sheet surface to leach in collected nitric acid waste, obtaining silver-colored solar battery sheet and argentiferous acid solution, the silicon nitride anti-reflection layer that collected hydrofluoric acid waste liquid removes silver-colored solar battery sheet table is put into by removing silver-colored solar battery sheet, pure silicon chip is obtained after obtaining the cleaning of denitrification SiClx solar battery sheet, described silicon chip can be reused for processing raw material of solar battery sheet, add copper powder in argentiferous acid solution and make silver-coated copper powder for the preparation of electric slurry, described electric slurry is used for the slurry of silk screen printing, the various waste liquids produced in this technology utilization solar battery sheet production process are for recycling the substandard solar cell sheet scrapped and produce in inefficacy and production process, not only avoid a large amount of discharging of waste liquid and substandard solar cell sheet destroys the environmental pollution caused, the silicon chip simultaneously reclaimed, silver-coated copper powder, aluminium paste can directly be supplied to solar cell slice assembly line, both the recycling of waste liquid had been accomplished, also reduce the generation of discarded object simultaneously, environmental protection is more utilized to produce, greatly can reduce the use amount of solar battery sheet course of processing Raw, thus reduce the production cost of solar battery sheet.
In the above-described embodiment, add concrete grammar that copper powder makes silver-coated copper powder in described argentiferous acid solution existing chemical method can be adopted to prepare silver powder be then wrapped in Copper Powder Surface and obtain, but the silver-coated copper powder silver content that this chemical method preparation method is made is lower, silver coating compactness is low, poorly conductive and production cost is higher, efficiency is lower.The invention provides and provide a kind of new silver-coated copper powder preparation method: namely in argentiferous acid solution, add copper powder and obtain solidliquid mixture, the weight ratio of described argentiferous acid solution and copper powder is 1.5 ~ 3, and circular grinding in solidliquid mixture suction milling apparatus can be obtained silver-coated copper powder in 20 ~ 50 minutes.Copper powder only need join in argentiferous acid solution according to certain weight ratio by the method, then by circular grinding in its suction milling apparatus 20 ~ 50 minutes, chemical reaction is there is in the solidliquid mixture of copper powder and argentiferous acid solution in process of lapping, silver ion is cemented out generation silver powder by part copper powder and argentiferous acid solution generation displacement reaction, the silver powder generated is deposited on the surface of copper powder particle, because solidliquid mixture is also subject to the abrasive action power of milling apparatus in process of lapping simultaneously, under abrasive action power, more silver powder is deposited over the surface of copper powder, and the silver layer that copper powder particle surface is formed under abrasive action power can be finer and close, covering property is good, and then the conductivity of silver-coated copper powder also improves greatly, through verification experimental verification, in the silver-coated copper powder utilizing said method to obtain, silver content can reach more than 55%, substantially increase the combination property of silver-coated copper powder, thus reduce the consumption of silver-coated copper powder, reduce production cost, improve product benefit.
In order to guarantee to displace all silver ions and at the enough silver powder of copper powder particle surface deposition, the weight ratio of described argentiferous acid solution and copper powder is 2.
In order to improve the content of silver in silver-coated copper powder to greatest extent, the particle diameter of described copper powder is 2 ~ 3 microns, and such copper powder particle has enough large relative surface area can deposit more silver powder.
In order to make displacement reaction more abundant, enable more silver powder be deposited on copper powder particle surface, in described solidliquid mixture suction milling apparatus, the time of circular grinding is preferably 30 minutes simultaneously.Further, the temperature of described argentiferous acid solution is 20 DEG C.
In order to while guarantee making herbs into wool effect, the production cost of further reduction solar battery sheet, the alkaline solution used in described step B is preferably sodium hydroxide solution, due to sodium hydroxide solution low price, and easily obtain, can greatly reduce its production cost.In order to ensure aluminium effect, in described step B, collected sodium hydroxide waste liquor concentration is 3 ~ 7%.Further, in order to ensure aluminium effect, minimize cost, in described step B, collected sodium hydroxide waste liquor concentration is 5% simultaneously.
In order to ensure the effect of dephosphorization silex glass process, further reduce the production cost of solar battery sheet simultaneously, the acid solution used in described step D is hydrochloric acid, hydrochloric acid corrosion resistance is strong, the effect of dephosphorization silex glass process can be ensured, meanwhile, the price of hydrochloric acid is relatively cheap, can greatly reduce its production cost.In order to ensure aluminium effect, minimize cost, in described step D, collected hydrochloride waste concentration is 3 ~ 7% simultaneously.Further, in order to ensure aluminium effect, minimize cost, in described step D, collected hydrochloride waste concentration is 5% simultaneously.
In order to ensure silver-colored effect, in described step e, collected nitric acid waste concentration is 1 ~ 2%.In order to make the silver on solar battery sheet surface all dissolve removal, minimize cost, in described step e, collected nitric acid waste concentration is preferably 1.5% simultaneously.
In order to ensure denitrification SiClx effect, in described step e, collected hydrofluoric acid waste liquid concentration is 0.2 ~ 0.8%.In order to make the silicon nitride film on solar battery sheet surface all remove, minimize cost, in described step e, collected hydrofluoric acid waste liquid concentration is 0.5% simultaneously.
Embodiment
Be the sodium hydroxide waste liquor process of 5% by collected 100L concentration by 100kg solar battery sheet, reaction is to neutral, remove portion aluminium lamination, then solar battery sheet to be soaked in collected 300L concentration be in the hydrochloride waste of 5%, until aluminium lamination is removed completely; Then being the nitric acid waste of 1.5% by going aluminium solar battery sheet to drop into collected 100L concentration, silver being dissolved and obtains argentiferous acid solution completely; Putting into 20L concentration removing silver-colored solar battery sheet is remove silicon nitride in the hydrofluoric acid waste liquid of 0.5%, and obtain pure silicon chip 80kg, the rate of recovery is about 90%; Finally be converted into aluminium oxide by containing the aluminium in aluminum solutions, obtain about 20kg alumina recovery rate and be about 93%, the temperature of argentiferous acid solution is controlled at 20 DEG C, and add particle diameter be 2-3 micron flake copper mixing after form solidliquid mixture, the quality of the flake copper added is the half of argentiferous acid solution quality, by the solidliquid mixture suction sand mill high-speed circulating grinding 30min formed after mixing, obtains silver content about 55% silver color silver-coated copper powder, D50=1-2 micron, conductance is 1.5 × 10-5 Ω cm.
Claims (10)
1. a solar cell machining process, is characterized in that comprising the following steps:
A, to need processing silicon chip detect, remove defective silicon chip;
B, the qualified silicon chip through detecting is put into alkaline solution and carried out surface wool manufacturing process, and alkaline waste liquor remaining after making herbs into wool process is collected;
C, the silicon chip of making herbs into wool process is put into diffusion facilities carry out diffusion process;
D, the silicon chip through diffusion process is put into acid solution carry out the process of dephosphorization silex glass, and acid waste liquid remaining after the process of dephosphorization silex glass is collected;
E, wet etching treatment is carried out to the silicon chip obtained after diffusion; First use hydrofluoric acid each surface to the silicon chip obtained after diffusion carry out rinse and hydrofluoric acid waste liquid remaining after rinse collected, by obtain in step D go aluminium solar battery sheet to clean after; Then silicon chip is put into salpeter solution carry out etching and the nitric acid waste of post-etch residue is collected, then with alkaline solution the silicon chip after etching cleaned and alkaline solution remaining after cleaning is collected, finally utilizing pure water to clean silicon chip and carry out drying and process;
F, PECVD device is utilized to prepare antireflective coating at the silicon chip surface through wet etching treatment;
G, will be coated with antireflective coating silicon chip adopt silk screen printing mode silicon chip upper and lower surface print positive and negative electrode;
H, obtain solar battery sheet by putting into after agglomerating plant carries out sintering processes through the silicon chip of silk screen printing;
I, underproof solar battery sheet is put into the part aluminium lamination that collected alkaline waste liquor removes solar battery sheet aluminium back surface field, the substandard solar cell sheet soaked through alkaline waste liquor is put into the residue aluminium lamination that collected acid waste liquid removes solar battery sheet again and obtain aluminium solar battery sheet and aluminum bearing waste, aluminum bearing waste is converted into aluminium oxide by chemical mode; Go aluminium solar battery sheet after cleaning, being immersed in going the silver on aluminium solar battery sheet surface to leach in collected nitric acid waste, obtaining silver-colored solar battery sheet and argentiferous acid solution; The silicon nitride anti-reflection layer that collected hydrofluoric acid waste liquid removes silver-colored solar battery sheet table is put into by removing silver-colored solar battery sheet, obtain pure silicon chip after obtaining the cleaning of denitrification SiClx solar battery sheet, described silicon chip is processed to qualified solar battery sheet after steps A to H; Add copper powder in argentiferous acid solution and make silver-coated copper powder for the preparation of electric slurry, described electric slurry is used for the slurry of silk screen printing in step G.
2. solar cell machining process as claimed in claim 1, it is characterized in that: adding copper powder in described argentiferous acid solution, to make the concrete grammar of silver-coated copper powder as described below: in argentiferous acid solution, add copper powder obtain solidliquid mixture, the weight ratio of described argentiferous acid solution and copper powder is 1.5 ~ 3, and circular grinding in solidliquid mixture suction milling apparatus can be obtained silver-coated copper powder in 20 ~ 50 minutes.
3. solar cell machining process as claimed in claim 2, is characterized in that: the weight ratio of described argentiferous acid solution and copper powder is 2.
4. solar cell machining process as claimed in claim 3, is characterized in that: the particle diameter of described copper powder is 2 ~ 3 microns.
5. solar cell machining process as claimed in claim 4, is characterized in that: in described solidliquid mixture suction milling apparatus, the time of circular grinding is 30 minutes.
6. solar cell machining process as claimed in claim 5, is characterized in that: the temperature of described argentiferous acid solution is 20 DEG C.
7. solar cell machining process as claimed in claim 1, is characterized in that: in described step B, collected alkaline waste liquor concentration is 5%.
8. solar cell machining process as claimed in claim 7, is characterized in that: in described step D, collected acid waste liquid concentration is 5%.
9. solar cell machining process as claimed in claim 8, is characterized in that: in described step e, collected hydrofluoric acid waste liquid concentration is 0.5%.
10. solar cell machining process as claimed in claim 9, is characterized in that: in described step e, collected nitric acid waste concentration is 1.5%.
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| CN106098860A (en) * | 2016-08-27 | 2016-11-09 | 浙江中晶新能源有限公司 | A kind of production technology of solar battery sheet |
| CN107321766A (en) * | 2017-08-14 | 2017-11-07 | 通威太阳能（安徽）有限公司 | A kind of refuse battery piece recovery process |
| CN108054244A (en) * | 2017-12-19 | 2018-05-18 | 温州海旭科技有限公司 | A kind of manufacturing process of solar battery sheet |
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| WO2014079083A1 (en) * | 2012-11-20 | 2014-05-30 | 泰通(泰州)工业有限公司 | Method for manufacturing solar energy battery electrode |
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| CN103606595A (en) * | 2013-11-21 | 2014-02-26 | 英利集团有限公司 | Reutilization method and grating line recovery method of defective monocrystalline silicon battery sheet after sintering |
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| CN108054244A (en) * | 2017-12-19 | 2018-05-18 | 温州海旭科技有限公司 | A kind of manufacturing process of solar battery sheet |
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