CN105355694A - Solar assembly adopting rear surface passivation and having dustproof anti-reflection function - Google Patents
Solar assembly adopting rear surface passivation and having dustproof anti-reflection function Download PDFInfo
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- CN105355694A CN105355694A CN201510817922.6A CN201510817922A CN105355694A CN 105355694 A CN105355694 A CN 105355694A CN 201510817922 A CN201510817922 A CN 201510817922A CN 105355694 A CN105355694 A CN 105355694A
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- 238000002161 passivation Methods 0.000 title claims abstract description 39
- 239000012752 auxiliary agent Substances 0.000 claims abstract description 74
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 46
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 41
- 150000002910 rare earth metals Chemical class 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000010703 silicon Substances 0.000 claims abstract description 23
- 239000000203 mixture Substances 0.000 claims description 136
- 238000005260 corrosion Methods 0.000 claims description 83
- 230000007797 corrosion Effects 0.000 claims description 83
- 229910052751 metal Inorganic materials 0.000 claims description 79
- 239000002184 metal Substances 0.000 claims description 79
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 64
- 238000001816 cooling Methods 0.000 claims description 43
- 238000003756 stirring Methods 0.000 claims description 43
- 239000000843 powder Substances 0.000 claims description 40
- 238000002360 preparation method Methods 0.000 claims description 39
- 239000007789 gas Substances 0.000 claims description 32
- 229910052757 nitrogen Inorganic materials 0.000 claims description 32
- 230000001681 protective effect Effects 0.000 claims description 32
- 229910052748 manganese Inorganic materials 0.000 claims description 28
- 229910052759 nickel Inorganic materials 0.000 claims description 28
- 239000000428 dust Substances 0.000 claims description 23
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 22
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 claims description 22
- 239000004925 Acrylic resin Substances 0.000 claims description 22
- 229920000178 Acrylic resin Polymers 0.000 claims description 22
- NLZUEZXRPGMBCV-UHFFFAOYSA-N Butylhydroxytoluene Chemical compound CC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 NLZUEZXRPGMBCV-UHFFFAOYSA-N 0.000 claims description 22
- 229920005549 butyl rubber Polymers 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 22
- 238000002156 mixing Methods 0.000 claims description 22
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 22
- 239000004408 titanium dioxide Substances 0.000 claims description 22
- 229910052804 chromium Inorganic materials 0.000 claims description 17
- 229910052802 copper Inorganic materials 0.000 claims description 17
- 229910052749 magnesium Inorganic materials 0.000 claims description 17
- 229910052720 vanadium Inorganic materials 0.000 claims description 17
- 229910052725 zinc Inorganic materials 0.000 claims description 17
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 16
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- 229910052691 Erbium Inorganic materials 0.000 claims description 11
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 11
- 229910052779 Neodymium Inorganic materials 0.000 claims description 11
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 11
- 229910052772 Samarium Inorganic materials 0.000 claims description 11
- 238000003723 Smelting Methods 0.000 claims description 11
- 229910052799 carbon Inorganic materials 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 11
- 229910052742 iron Inorganic materials 0.000 claims description 11
- 229910052717 sulfur Inorganic materials 0.000 claims description 11
- 230000008021 deposition Effects 0.000 claims description 8
- 238000009413 insulation Methods 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 2
- 229910052593 corundum Inorganic materials 0.000 abstract 2
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000010521 absorption reaction Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003026 anti-oxygenic effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000000415 inactivating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Compositions Of Macromolecular Compounds (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Catalysts (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a solar assembly adopting rear surface passivation and having a dustproof anti-reflection function. The solar assembly comprises a solar cell silicon substrate; a passivation layer is arranged on the rear surface of the substrate; and the passivation layer comprises the following components, in mass percent: 15.5-15.7% of SiO2, 22.4-22.6% of Al2O3, 5.6-5.9% of Ni, 12.3-12.5% of TiO2, 3.2-3.5% of Cr, 3.7-3.9% of Cu, 2.3-2.5% of Zn, 3.2-3.5% of Mg, 0.13-0.15% of V, 0.12-0.14% of Mn and 1.2-1.6% of rare earth, and balance of auxiliary agent. Through the passivation layer structure, heat stability of the Al2O3 film is improved, and adsorptivity of the film layer is high, and the film layer is not easy to shed; and the strength of the surface can be enhanced, the service life is long, the application range is wide, and the cost is low.
Description
Technical field
The present invention relates to solar components, particularly a kind of solar components adopting passivating back to have dust-proof anti-reflection function.
Background technology
Along with developing rapidly of photovoltaic industry, the field of photovoltaic module application is more and more wider, and the application of photovoltaic module has penetrated into the every aspect in our life, photovoltaic module exercise its functional while also bear the decoration function of a part;
And along with socioeconomic development, high performance solar batteries development important development direction be adopt passivating structure, in current solar energy production Application comparison widely passivating film have SiO
2and AL
2o
3film, but due to AL
2o
3the poor heat stability of film, the state sintered overleaf was easily etched once, and easily came off under severe environment for use, and useful life is short, and cost is high.
Summary of the invention
Technical problem to be solved by this invention is, for the shortcoming of above prior art, proposing a kind of solar components adopting passivating back to have dust-proof anti-reflection function, by arranging passivation layer structure, can not only improve AL
2o
3the thermal stability of film, and thin layer absorption property is strong, difficult drop-off, and can increase the intensity on surface, long service life, and anti-dust performance is good, light transmittance is high, and the scope of application is wide, and cost is low.
In order to solve the problems of the technologies described above, the present invention devises a kind of solar components adopting passivating back to have dust-proof anti-reflection function, comprises solar cell silicon substrate, is provided with passivation layer at substrate back, and the component of passivation layer is by mass percentage: SiO
2: 15.5-15.7%, AL
2o
3: 22.4-22.6%, Ni:5.6-5.9%, TiO
2: 12.3-12.5%, Cr:3.2-3.5%, Cu:3.7-3.9%, Zn:2.3-2.5%, Mg:3.2-3.5%, V:0.13-0.15%, Mn:0.12-0.14%, rare earth: 1.2-1.6%, surplus is auxiliary agent;
Wherein rare earth component is by mass percentage: La:12.6-12.8%, Pr:4.5-4.7%, Sm:8.4-8.8%, Nd:15.7-15.9%, Gd:14.2-14.6%, Er:17.2-18.6%, and surplus is Ce;
Wherein auxiliary agent comprises metal mixture and corrosion-resistant mixture, and the component of auxiliary agent is counted by weight: metal mixture: 80-90 part, corrosion-resistant mixture: 20-30 part;
Wherein the component of metal mixture is counted by weight: C:0.02-0.04 part, Si:3.2-3.4 part, Ni:5.4-5.8 part, S:0.2-0.4 part, Sc:1.4-1.6 part, K:2.3-2.5 part, Al:4.5-4.7 part, Mn:5.2-5.5 part, Fe:4.7-4.9 part;
Wherein the component of corrosion-resistant mixture is counted by weight: acrylic resin: 40-45 part, carborundum: 8-12 part, dolomol: 7-9 part, propylene glycol monomethyl ether: 5-7 part, titanium dioxide: 20-25 part, butyl rubber: 2-3 part, antioxidant 264: 4-6 part;
The preparation method of auxiliary agent: first prepare metal mixture and corrosion-resistant mixture respectively, the wherein preparation method of metal mixture: by C, Si, Ni, S, Sc, K, Al, Mn and Fe element drops in smelting furnace, by heating temperatures to 1020-1050 DEG C, stir, and pass into nitrogen as protective gas, mixing time is 30-40min, then 1-3 hour is incubated, then adopt air-cooled, 500-520 DEG C is cooled to the air-cooled speed of 7-9 DEG C/s, then water-cooled is adopted, 200-220 DEG C is cooled to the water-cooled speed of 15-18 DEG C/s, last air cooling is to room temperature, then metallic object is taken out, put into ball mill, pulverize, cross 100 order numbers and obtain metal dust A,
The preparation method of corrosion-resistant mixture: by acrylic resin, carborundum, dolomol, propylene glycol monomethyl ether, titanium dioxide, butyl rubber, antioxidant 264 is put into reactor and is mixed, temperature is increased to 220-240 DEG C, stirs, mixing speed is 350-400r/min, and pass into nitrogen as protective gas, then air cooling is to room temperature, and modulation pH value is 7, then obtains corrosion-resistant mixture B;
Finally mixed in the ratio of 4:1 or 3:1 with corrosion-resistant mixture B by metal dust A, be heated to 750-780 DEG C, stir, insulation 5-8 hour, then air cooling is to room temperature, then puts into ball mill, pulverizes, and crosses 200 order numbers, can obtain auxiliary agent.
Present invention also offers the preparation method of passivation layer, the method is carried out according to the following steps:
Step (1): first rare earth and auxiliary agent are all divided into two parts, by AL
2o
3, Ni, Cr, Cu, Zn, a rare earth and a auxiliary agent put into reactor, be heated to 300-350 DEG C, stir, and pass into nitrogen as protective gas, then air cooling is to room temperature, then put into ball mill to pulverize, cross 200 order numbers and obtain powder C, then adopt ALD method to be deposited into solar cell silicon substrate powder C;
Step (2): by elements Si O
2, TiO
2, Mg, V, Mn, a rare earth and a auxiliary agent put into reactor; be heated to 400-420 DEG C; stir; and pass into nitrogen as protective gas; then air cooling is to room temperature, then puts into ball mill and pulverizes, and crosses 200 order numbers and obtains powder D; then adopt ALD method to be deposited into solar cell silicon substrate powder D, and powder D layer is covered in powder C layer surface.
The technical scheme that the present invention limits further is:
Aforesaid employing passivating back has the solar components of dust-proof anti-reflection function, comprises solar cell silicon substrate, is provided with passivation layer at substrate back, and the component of passivation layer is by mass percentage: SiO
2: 15.5%, AL
2o
3: 22.4%, Ni:5.6%, TiO
2: 12.3%, Cr:3.2%, Cu:3.7%, Zn:2.3%, Mg:3.2%, V:0.13%, Mn:0.12%, rare earth: 1.2%, surplus is auxiliary agent;
Wherein rare earth component is by mass percentage: La:12.6%, Pr:4.5%, Sm:8.4%, Nd:15.7%, Gd:14.2%, Er:17.2%, and surplus is Ce;
Wherein auxiliary agent comprises metal mixture and corrosion-resistant mixture, and the component of auxiliary agent is counted by weight: metal mixture: 80 parts, corrosion-resistant mixture: 20 parts;
Wherein the component of metal mixture is counted by weight: C:0.02 part, Si:3.2 part, Ni:5.4 part, S:0.2 part, Sc:1.4 part, K:2.3 part, Al:4.5 part, Mn:5.2 part, Fe:4.7 part;
Wherein the component of corrosion-resistant mixture is counted by weight: acrylic resin: 40 parts, carborundum: 8 parts, dolomol: 7 parts, propylene glycol monomethyl ether: 5 parts, titanium dioxide: 20 parts, butyl rubber: 2 parts, antioxidant 264: 4 parts;
The preparation method of auxiliary agent: first prepare metal mixture and corrosion-resistant mixture respectively, the wherein preparation method of metal mixture: by C, Si, Ni, S, Sc, K, Al, Mn and Fe element drops in smelting furnace, by heating temperatures to 1020 DEG C, stir, and pass into nitrogen as protective gas, mixing time is 30min, then 1 hour is incubated, then adopt air-cooled, 500 DEG C are cooled to the air-cooled speed of 7 DEG C/s, then water-cooled is adopted, 200 DEG C are cooled to the water-cooled speed of 15 DEG C/s, last air cooling is to room temperature, then metallic object is taken out, put into ball mill, pulverize, cross 100 order numbers and obtain metal dust A,
The preparation method of corrosion-resistant mixture: by acrylic resin, carborundum, dolomol, propylene glycol monomethyl ether, titanium dioxide, butyl rubber, antioxidant 264 is put into reactor and is mixed, temperature is increased to 220 DEG C, stirs, mixing speed is 350r/min, and pass into nitrogen as protective gas, then air cooling is to room temperature, and modulation pH value is 7, then obtains corrosion-resistant mixture B;
Finally mixed in the ratio of 4:1 with corrosion-resistant mixture B by metal dust A, be heated to 750 DEG C, stir, be incubated 5 hours, then air cooling is to room temperature, then puts into ball mill, pulverizes, and crosses 200 order numbers, can obtain auxiliary agent.
Aforesaid employing passivating back has the solar components of dust-proof anti-reflection function, comprises solar cell silicon substrate, is provided with passivation layer at substrate back, and the component of passivation layer is by mass percentage: SiO
2: 15.7%, AL
2o
3: 22.6%, Ni:5.9%, TiO
2: 12.5%, Cr:3.5%, Cu:3.9%, Zn:2.5%, Mg:3.5%, V:0.15%, Mn:0.14%, rare earth: 1.6%, surplus is auxiliary agent;
Wherein rare earth component is by mass percentage: La:12.8%, Pr:4.7%, Sm:8.8%, Nd:15.9%, Gd:14.6%, Er:18.6%, and surplus is Ce;
Wherein auxiliary agent comprises metal mixture and corrosion-resistant mixture, and the component of auxiliary agent is counted by weight: metal mixture: 90 parts, corrosion-resistant mixture: 30 parts;
Wherein the component of metal mixture is counted by weight: C:0.04 part, Si:3.4 part, Ni:5.8 part, S:0.4 part, Sc:1.6 part, K:2.5 part, Al:4.7 part, Mn:5.5 part, Fe:4.9 part;
Wherein the component of corrosion-resistant mixture is counted by weight: acrylic resin: 45 parts, carborundum: 12 parts, dolomol: 9 parts, propylene glycol monomethyl ether: 7 parts, titanium dioxide: 25 parts, butyl rubber: 3 parts, antioxidant 264: 6 parts;
The preparation method of auxiliary agent: first prepare metal mixture and corrosion-resistant mixture respectively, the wherein preparation method of metal mixture: by C, Si, Ni, S, Sc, K, Al, Mn and Fe element drops in smelting furnace, by heating temperatures to 1050 DEG C, stir, and pass into nitrogen as protective gas, mixing time is 40min, then 3 hours are incubated, then adopt air-cooled, 520 DEG C are cooled to the air-cooled speed of 9 DEG C/s, then water-cooled is adopted, 220 DEG C are cooled to the water-cooled speed of 18 DEG C/s, last air cooling is to room temperature, then metallic object is taken out, put into ball mill, pulverize, cross 100 order numbers and obtain metal dust A,
The preparation method of corrosion-resistant mixture: by acrylic resin, carborundum, dolomol, propylene glycol monomethyl ether, titanium dioxide, butyl rubber, antioxidant 264 is put into reactor and is mixed, temperature is increased to 240 DEG C, stirs, mixing speed is 400r/min, and pass into nitrogen as protective gas, then air cooling is to room temperature, and modulation pH value is 7, then obtains corrosion-resistant mixture B;
Finally mixed in the ratio of 3:1 with corrosion-resistant mixture B by metal dust A, be heated to 780 DEG C, stir, be incubated 8 hours, then air cooling is to room temperature, then puts into ball mill, pulverizes, and crosses 200 order numbers, can obtain auxiliary agent.
Aforesaid employing passivating back has the solar components of dust-proof anti-reflection function, comprises solar cell silicon substrate, is provided with passivation layer at substrate back, and the component of passivation layer is by mass percentage: SiO
2: 15.6%, AL
2o
3: 22.5%, Ni:5.7%, TiO
2: 12.4%, Cr:3.3%, Cu:3.8%, Zn:2.4%, Mg:3.4%, V:0.14%, Mn:0.13%, rare earth: 1.5%, surplus is auxiliary agent;
Wherein rare earth component is by mass percentage: La:12.7%, Pr:4.6%, Sm:8.5%, Nd:15.8%, Gd:14.4%, Er:17.8%, and surplus is Ce;
Wherein auxiliary agent comprises metal mixture and corrosion-resistant mixture, and the component of auxiliary agent is counted by weight: metal mixture: 85 parts, corrosion-resistant mixture: 25 parts;
Wherein the component of metal mixture is counted by weight: C:0.03 part, Si:3.3 part, Ni:5.6 part, S:0.3 part, Sc:1.5 part, K:2.4 part, Al:4.6 part, Mn:5.3 part, Fe:4.8 part;
Wherein the component of corrosion-resistant mixture is counted by weight: acrylic resin: 42 parts, carborundum: 10 parts, dolomol: 8 parts, propylene glycol monomethyl ether: 6 parts, titanium dioxide: 22 parts, butyl rubber: 3 parts, antioxidant 264: 5 parts;
The preparation method of auxiliary agent: first prepare metal mixture and corrosion-resistant mixture respectively, the wherein preparation method of metal mixture: by C, Si, Ni, S, Sc, K, Al, Mn and Fe element drops in smelting furnace, by heating temperatures to 1030 DEG C, stir, and pass into nitrogen as protective gas, mixing time is 35min, then 2 hours are incubated, then adopt air-cooled, 510 DEG C are cooled to the air-cooled speed of 8 DEG C/s, then water-cooled is adopted, 210 DEG C are cooled to the water-cooled speed of 17 DEG C/s, last air cooling is to room temperature, then metallic object is taken out, put into ball mill, pulverize, cross 100 order numbers and obtain metal dust A,
The preparation method of corrosion-resistant mixture: by acrylic resin, carborundum, dolomol, propylene glycol monomethyl ether, titanium dioxide, butyl rubber, antioxidant 264 is put into reactor and is mixed, temperature is increased to 230 DEG C, stirs, mixing speed is 380r/min, and pass into nitrogen as protective gas, then air cooling is to room temperature, and modulation pH value is 7, then obtains corrosion-resistant mixture B;
Finally mixed in the ratio of 4:1 with corrosion-resistant mixture B by metal dust A, be heated to 760 DEG C, stir, be incubated 7 hours, then air cooling is to room temperature, then puts into ball mill, pulverizes, and crosses 200 order numbers, can obtain auxiliary agent.
Aforesaid employing passivating back has the solar components of dust-proof anti-reflection function, and the temperature adopting ALD method deposition is 300-320 DEG C.
Aforesaid employing passivating back has the solar components of dust-proof anti-reflection function, and the thickness of powder C layer is 6-9nm.
Aforesaid employing passivating back has the solar components of dust-proof anti-reflection function, and the thickness of powder D layer is 7-9nm.
Beneficial effect of the present invention: the passivation film layer that the technical program can provide a kind of thickness little, AL in this passivation layer
2o
3the Heat stability is good of film, and thin layer absorption property is strong, difficult drop-off, can increase the intensity on surface, long service life, and the scope of application is wide, and cost is low, and by AL
2o
3add Ni, Cr, Cu, Zn, rare earth and auxiliary agent in thin layer, effectively improve AL
2o
3thermal stability, increase its corrosion resistance, increase useful life, increase the intensity of thin layer simultaneously, reduce thickness, save material, reduce costs, simultaneously SiO
2tiO is added in thin layer
2, Mg, V, Mn, rare earth and auxiliary agent, greatly increase the intensity of its thin layer, increase corrosion-resistant and resistance to elevated temperatures, heat dispersion is strong simultaneously, adds the intensity that rare earth can improve passivation layer, form fine and close crystal grain, containing metal mixture and corrosion-resistant mixture in auxiliary agent, corrosion-resistant mixture improves absorption property, improves rub resistance and corrosion resistance, metal mixture can improve its intensity and corrosion resistance, and antioxygenic property is strong;
And in the preparation method adopted, film thickness is easy to control, and accuracy is high; Inactivating performance is very good, simple to operate, and passivation layer can as back reflector simultaneously, increase the absorption of longwave optical, between between silicon substrate and aluminium back surface field, effectively can reduce the warpage of cell piece, be conducive to the raising of industrialization productivity ratio, improve carrier collection efficiency, the field passivation effect of a large amount of fixed charges, improves carrier collection efficiency, increases short circuit current, improve the overall performance of battery, light transmittance is high.
Embodiment
The present invention is described in further detail below:
Embodiment 1
The invention provides a kind of solar components adopting passivating back to have dust-proof anti-reflection function, comprise solar cell silicon substrate, be provided with passivation layer at substrate back, the component of passivation layer is by mass percentage: SiO
2: 15.5%, AL
2o
3: 22.4%, Ni:5.6%, TiO
2: 12.3%, Cr:3.2%, Cu:3.7%, Zn:2.3%, Mg:3.2%, V:0.13%, Mn:0.12%, rare earth: 1.2%, surplus is auxiliary agent;
Wherein rare earth component is by mass percentage: La:12.6%, Pr:4.5%, Sm:8.4%, Nd:15.7%, Gd:14.2%, Er:17.2%, and surplus is Ce;
Wherein auxiliary agent comprises metal mixture and corrosion-resistant mixture, and the component of auxiliary agent is counted by weight: metal mixture: 80 parts, corrosion-resistant mixture: 20 parts;
Wherein the component of metal mixture is counted by weight: C:0.02 part, Si:3.2 part, Ni:5.4 part, S:0.2 part, Sc:1.4 part, K:2.3 part, Al:4.5 part, Mn:5.2 part, Fe:4.7 part;
Wherein the component of corrosion-resistant mixture is counted by weight: acrylic resin: 40 parts, carborundum: 8 parts, dolomol: 7 parts, propylene glycol monomethyl ether: 5 parts, titanium dioxide: 20 parts, butyl rubber: 2 parts, antioxidant 264: 4 parts;
The preparation method of auxiliary agent: first prepare metal mixture and corrosion-resistant mixture respectively, the wherein preparation method of metal mixture: by C, Si, Ni, S, Sc, K, Al, Mn and Fe element drops in smelting furnace, by heating temperatures to 1020 DEG C, stir, and pass into nitrogen as protective gas, mixing time is 30min, then 1 hour is incubated, then adopt air-cooled, 500 DEG C are cooled to the air-cooled speed of 7 DEG C/s, then water-cooled is adopted, 200 DEG C are cooled to the water-cooled speed of 15 DEG C/s, last air cooling is to room temperature, then metallic object is taken out, put into ball mill, pulverize, cross 100 order numbers and obtain metal dust A,
The preparation method of corrosion-resistant mixture: by acrylic resin, carborundum, dolomol, propylene glycol monomethyl ether, titanium dioxide, butyl rubber, antioxidant 264 is put into reactor and is mixed, temperature is increased to 220 DEG C, stirs, mixing speed is 350r/min, and pass into nitrogen as protective gas, then air cooling is to room temperature, and modulation pH value is 7, then obtains corrosion-resistant mixture B;
Finally mixed in the ratio of 4:1 with corrosion-resistant mixture B by metal dust A, be heated to 750 DEG C, stir, be incubated 5 hours, then air cooling is to room temperature, then puts into ball mill, pulverizes, and crosses 200 order numbers, can obtain auxiliary agent;
The present embodiment additionally provides the preparation method of passivation layer, and the method is carried out according to the following steps:
Step (1): first rare earth and auxiliary agent are all divided into two parts, by AL
2o
3, Ni, Cr, Cu, Zn, a rare earth and a auxiliary agent put into reactor, be heated to 300 DEG C, stir, and pass into nitrogen as protective gas, then air cooling is to room temperature, then put into ball mill to pulverize, cross 200 order numbers and obtain powder C, then adopt ALD method to be deposited into solar cell silicon substrate powder C; The temperature of ALD method deposition is 300 DEG C, and the thickness of powder C layer is 6nm;
Step (2): by elements Si O
2, TiO
2, Mg, V, Mn, a rare earth and a auxiliary agent put into reactor, be heated to 400 DEG C, stir, and pass into nitrogen as protective gas, then air cooling is to room temperature, then puts into ball mill and pulverizes, and crosses 200 order numbers and obtains powder D, then adopt ALD method to be deposited into solar cell silicon substrate powder D, and powder D layer is covered in powder C layer surface; The temperature of ALD method deposition is 300 DEG C, and the thickness of powder D layer is 7nm.
Embodiment 2
Present embodiments provide a kind of solar components adopting passivating back to have dust-proof anti-reflection function, comprise solar cell silicon substrate, be provided with passivation layer at substrate back, the component of passivation layer is by mass percentage: SiO
2: 15.7%, AL
2o
3: 22.6%, Ni:5.9%, TiO
2: 12.5%, Cr:3.5%, Cu:3.9%, Zn:2.5%, Mg:3.5%, V:0.15%, Mn:0.14%, rare earth: 1.6%, surplus is auxiliary agent;
Wherein rare earth component is by mass percentage: La:12.8%, Pr:4.7%, Sm:8.8%, Nd:15.9%, Gd:14.6%, Er:18.6%, and surplus is Ce;
Wherein auxiliary agent comprises metal mixture and corrosion-resistant mixture, and the component of auxiliary agent is counted by weight: metal mixture: 90 parts, corrosion-resistant mixture: 30 parts;
Wherein the component of metal mixture is counted by weight: C:0.04 part, Si:3.4 part, Ni:5.8 part, S:0.4 part, Sc:1.6 part, K:2.5 part, Al:4.7 part, Mn:5.5 part, Fe:4.9 part;
Wherein the component of corrosion-resistant mixture is counted by weight: acrylic resin: 45 parts, carborundum: 12 parts, dolomol: 9 parts, propylene glycol monomethyl ether: 7 parts, titanium dioxide: 25 parts, butyl rubber: 3 parts, antioxidant 264: 6 parts;
The preparation method of auxiliary agent: first prepare metal mixture and corrosion-resistant mixture respectively, the wherein preparation method of metal mixture: by C, Si, Ni, S, Sc, K, Al, Mn and Fe element drops in smelting furnace, by heating temperatures to 1050 DEG C, stir, and pass into nitrogen as protective gas, mixing time is 40min, then 3 hours are incubated, then adopt air-cooled, 520 DEG C are cooled to the air-cooled speed of 9 DEG C/s, then water-cooled is adopted, 220 DEG C are cooled to the water-cooled speed of 18 DEG C/s, last air cooling is to room temperature, then metallic object is taken out, put into ball mill, pulverize, cross 100 order numbers and obtain metal dust A,
The preparation method of corrosion-resistant mixture: by acrylic resin, carborundum, dolomol, propylene glycol monomethyl ether, titanium dioxide, butyl rubber, antioxidant 264 is put into reactor and is mixed, temperature is increased to 240 DEG C, stirs, mixing speed is 400r/min, and pass into nitrogen as protective gas, then air cooling is to room temperature, and modulation pH value is 7, then obtains corrosion-resistant mixture B;
Finally mixed in the ratio of 3:1 with corrosion-resistant mixture B by metal dust A, be heated to 780 DEG C, stir, be incubated 8 hours, then air cooling is to room temperature, then puts into ball mill, pulverizes, and crosses 200 order numbers, can obtain auxiliary agent;
The present embodiment additionally provides the preparation method of passivation layer, and the method is carried out according to the following steps:
Step (1): first rare earth and auxiliary agent are all divided into two parts, by AL
2o
3, Ni, Cr, Cu, Zn, a rare earth and a auxiliary agent put into reactor, be heated to 350 DEG C, stir, and pass into nitrogen as protective gas, then air cooling is to room temperature, then put into ball mill to pulverize, cross 200 order numbers and obtain powder C, then adopt ALD method to be deposited into solar cell silicon substrate powder C; The temperature of ALD method deposition is 320 DEG C, and the thickness of powder C layer is 9nm;
Step (2): by elements Si O
2, TiO
2, Mg, V, Mn, a rare earth and a auxiliary agent put into reactor, be heated to 420 DEG C, stir, and pass into nitrogen as protective gas, then air cooling is to room temperature, then puts into ball mill and pulverizes, and crosses 200 order numbers and obtains powder D, then adopt ALD method to be deposited into solar cell silicon substrate powder D, and powder D layer is covered in powder C layer surface; The temperature of ALD method deposition is 320 DEG C, and the thickness of powder D layer is 9nm.
Embodiment 3
Present embodiments provide a kind of solar components adopting passivating back to have dust-proof anti-reflection function, comprise solar cell silicon substrate, be provided with passivation layer at substrate back, the component of passivation layer is by mass percentage: SiO
2: 15.6%, AL
2o
3: 22.5%, Ni:5.7%, TiO
2: 12.4%, Cr:3.3%, Cu:3.8%, Zn:2.4%, Mg:3.4%, V:0.14%, Mn:0.13%, rare earth: 1.5%, surplus is auxiliary agent;
Wherein rare earth component is by mass percentage: La:12.7%, Pr:4.6%, Sm:8.5%, Nd:15.8%, Gd:14.4%, Er:17.8%, and surplus is Ce;
Wherein auxiliary agent comprises metal mixture and corrosion-resistant mixture, and the component of auxiliary agent is counted by weight: metal mixture: 85 parts, corrosion-resistant mixture: 25 parts;
Wherein the component of metal mixture is counted by weight: C:0.03 part, Si:3.3 part, Ni:5.6 part, S:0.3 part, Sc:1.5 part, K:2.4 part, Al:4.6 part, Mn:5.3 part, Fe:4.8 part;
Wherein the component of corrosion-resistant mixture is counted by weight: acrylic resin: 42 parts, carborundum: 10 parts, dolomol: 8 parts, propylene glycol monomethyl ether: 6 parts, titanium dioxide: 22 parts, butyl rubber: 3 parts, antioxidant 264: 5 parts;
The preparation method of auxiliary agent: first prepare metal mixture and corrosion-resistant mixture respectively, the wherein preparation method of metal mixture: by C, Si, Ni, S, Sc, K, Al, Mn and Fe element drops in smelting furnace, by heating temperatures to 1030 DEG C, stir, and pass into nitrogen as protective gas, mixing time is 35min, then 2 hours are incubated, then adopt air-cooled, 510 DEG C are cooled to the air-cooled speed of 8 DEG C/s, then water-cooled is adopted, 210 DEG C are cooled to the water-cooled speed of 17 DEG C/s, last air cooling is to room temperature, then metallic object is taken out, put into ball mill, pulverize, cross 100 order numbers and obtain metal dust A,
The preparation method of corrosion-resistant mixture: by acrylic resin, carborundum, dolomol, propylene glycol monomethyl ether, titanium dioxide, butyl rubber, antioxidant 264 is put into reactor and is mixed, temperature is increased to 230 DEG C, stirs, mixing speed is 380r/min, and pass into nitrogen as protective gas, then air cooling is to room temperature, and modulation pH value is 7, then obtains corrosion-resistant mixture B;
Finally mixed in the ratio of 4:1 with corrosion-resistant mixture B by metal dust A, be heated to 760 DEG C, stir, be incubated 7 hours, then air cooling is to room temperature, then puts into ball mill, pulverizes, and crosses 200 order numbers, can obtain auxiliary agent;
The present embodiment additionally provides the preparation method of passivation layer, and the method is carried out according to the following steps:
Step (1): first rare earth and auxiliary agent are all divided into two parts, by AL
2o
3, Ni, Cr, Cu, Zn, a rare earth and a auxiliary agent put into reactor, be heated to 320 DEG C, stir, and pass into nitrogen as protective gas, then air cooling is to room temperature, then put into ball mill to pulverize, cross 200 order numbers and obtain powder C, then adopt ALD method to be deposited into solar cell silicon substrate powder C; The temperature of ALD method deposition is 310 DEG C, and the thickness of powder C layer is 8nm;
Step (2): by elements Si O
2, TiO
2, Mg, V, Mn, a rare earth and a auxiliary agent put into reactor, be heated to 410 DEG C, stir, and pass into nitrogen as protective gas, then air cooling is to room temperature, then puts into ball mill and pulverizes, and crosses 200 order numbers and obtains powder D, then adopt ALD method to be deposited into solar cell silicon substrate powder D, and powder D layer is covered in powder C layer surface; The temperature of ALD method deposition is 310 DEG C, and the thickness of powder D layer is 8nm.
By the technical scheme of above embodiment, by arranging passivation layer structure, AL can not only be improved
2o
3the thermal stability of film, and thin layer absorption property is strong, difficult drop-off, can increase the intensity on surface, long service life, and the scope of application is wide, and cost is low.
Above embodiment is only and technological thought of the present invention is described, can not limit protection scope of the present invention with this, and every technological thought proposed according to the present invention, any change that technical scheme basis is done, all falls within scope.
Claims (8)
1. adopt passivating back to have a solar components for dust-proof anti-reflection function, it is characterized in that, comprise solar cell silicon substrate, be provided with passivation layer at described substrate back, the component of described passivation layer is by mass percentage: SiO
2: 15.5-15.7%, AL
2o
3: 22.4-22.6%, Ni:5.6-5.9%, TiO
2: 12.3-12.5%, Cr:3.2-3.5%, Cu:3.7-3.9%, Zn:2.3-2.5%, Mg:3.2-3.5%, V:0.13-0.15%, Mn:0.12-0.14%, rare earth: 1.2-1.6%, surplus is auxiliary agent;
Wherein said rare earth component is by mass percentage: La:12.6-12.8%, Pr:4.5-4.7%, Sm:8.4-8.8%, Nd:15.7-15.9%, Gd:14.2-14.6%, Er:17.2-18.6%, and surplus is Ce;
Wherein auxiliary agent comprises metal mixture and corrosion-resistant mixture, and the component of described auxiliary agent is counted by weight: metal mixture: 80-90 part, corrosion-resistant mixture: 20-30 part;
Wherein the component of metal mixture is counted by weight: C:0.02-0.04 part, Si:3.2-3.4 part, Ni:5.4-5.8 part, S:0.2-0.4 part, Sc:1.4-1.6 part, K:2.3-2.5 part, Al:4.5-4.7 part, Mn:5.2-5.5 part, Fe:4.7-4.9 part;
Wherein the component of corrosion-resistant mixture is counted by weight: acrylic resin: 40-45 part, carborundum: 8-12 part, dolomol: 7-9 part, propylene glycol monomethyl ether: 5-7 part, titanium dioxide: 20-25 part, butyl rubber: 2-3 part, antioxidant 264: 4-6 part;
The preparation method of described auxiliary agent: first prepare metal mixture and corrosion-resistant mixture respectively, the wherein preparation method of metal mixture: by C, Si, Ni, S, Sc, K, Al, Mn and Fe element drops in smelting furnace, by heating temperatures to 1020-1050 DEG C, stir, and pass into nitrogen as protective gas, mixing time is 30-40min, then 1-3 hour is incubated, then adopt air-cooled, 500-520 DEG C is cooled to the air-cooled speed of 7-9 DEG C/s, then water-cooled is adopted, 200-220 DEG C is cooled to the water-cooled speed of 15-18 DEG C/s, last air cooling is to room temperature, then metallic object is taken out, put into ball mill, pulverize, cross 100 order numbers and obtain metal dust A,
The preparation method of corrosion-resistant mixture: by acrylic resin, carborundum, dolomol, propylene glycol monomethyl ether, titanium dioxide, butyl rubber, antioxidant 264 is put into reactor and is mixed, temperature is increased to 220-240 DEG C, stirs, mixing speed is 350-400r/min, and pass into nitrogen as protective gas, then air cooling is to room temperature, and modulation pH value is 7, then obtains corrosion-resistant mixture B;
Finally mixed in the ratio of 4:1 or 3:1 with corrosion-resistant mixture B by metal dust A, be heated to 750-780 DEG C, stir, insulation 5-8 hour, then air cooling is to room temperature, then puts into ball mill, pulverizes, and crosses 200 order numbers, can obtain auxiliary agent.
2. employing passivating back according to claim 1 has the solar components of dust-proof anti-reflection function, it is characterized in that: comprise solar cell silicon substrate, is provided with passivation layer at described substrate back, and the component of described passivation layer is by mass percentage: SiO
2: 15.5%, AL
2o
3: 22.4%, Ni:5.6%, TiO
2: 12.3%, Cr:3.2%, Cu:3.7%, Zn:2.3%, Mg:3.2%, V:0.13%, Mn:0.12%, rare earth: 1.2%, surplus is auxiliary agent;
Wherein said rare earth component is by mass percentage: La:12.6%, Pr:4.5%, Sm:8.4%, Nd:15.7%, Gd:14.2%, Er:17.2%, and surplus is Ce;
Wherein auxiliary agent comprises metal mixture and corrosion-resistant mixture, and the component of described auxiliary agent is counted by weight: metal mixture: 80 parts, corrosion-resistant mixture: 20 parts;
Wherein the component of metal mixture is counted by weight: C:0.02 part, Si:3.2 part, Ni:5.4 part, S:0.2 part, Sc:1.4 part, K:2.3 part, Al:4.5 part, Mn:5.2 part, Fe:4.7 part;
Wherein the component of corrosion-resistant mixture is counted by weight: acrylic resin: 40 parts, carborundum: 8 parts, dolomol: 7 parts, propylene glycol monomethyl ether: 5 parts, titanium dioxide: 20 parts, butyl rubber: 2 parts, antioxidant 264: 4 parts;
The preparation method of described auxiliary agent: first prepare metal mixture and corrosion-resistant mixture respectively, the wherein preparation method of metal mixture: by C, Si, Ni, S, Sc, K, Al, Mn and Fe element drops in smelting furnace, by heating temperatures to 1020 DEG C, stir, and pass into nitrogen as protective gas, mixing time is 30min, then 1 hour is incubated, then adopt air-cooled, 500 DEG C are cooled to the air-cooled speed of 7 DEG C/s, then water-cooled is adopted, 200 DEG C are cooled to the water-cooled speed of 15 DEG C/s, last air cooling is to room temperature, then metallic object is taken out, put into ball mill, pulverize, cross 100 order numbers and obtain metal dust A,
The preparation method of corrosion-resistant mixture: by acrylic resin, carborundum, dolomol, propylene glycol monomethyl ether, titanium dioxide, butyl rubber, antioxidant 264 is put into reactor and is mixed, temperature is increased to 220 DEG C, stirs, mixing speed is 350r/min, and pass into nitrogen as protective gas, then air cooling is to room temperature, and modulation pH value is 7, then obtains corrosion-resistant mixture B;
Finally mixed in the ratio of 4:1 with corrosion-resistant mixture B by metal dust A, be heated to 750 DEG C, stir, be incubated 5 hours, then air cooling is to room temperature, then puts into ball mill, pulverizes, and crosses 200 order numbers, can obtain auxiliary agent.
3. employing passivating back according to claim 1 has the solar components of dust-proof anti-reflection function, it is characterized in that: comprise solar cell silicon substrate, is provided with passivation layer at described substrate back, and the component of described passivation layer is by mass percentage: SiO
2: 15.7%, AL
2o
3: 22.6%, Ni:5.9%, TiO
2: 12.5%, Cr:3.5%, Cu:3.9%, Zn:2.5%, Mg:3.5%, V:0.15%, Mn:0.14%, rare earth: 1.6%, surplus is auxiliary agent;
Wherein said rare earth component is by mass percentage: La:12.8%, Pr:4.7%, Sm:8.8%, Nd:15.9%, Gd:14.6%, Er:18.6%, and surplus is Ce;
Wherein auxiliary agent comprises metal mixture and corrosion-resistant mixture, and the component of described auxiliary agent is counted by weight: metal mixture: 90 parts, corrosion-resistant mixture: 30 parts;
Wherein the component of metal mixture is counted by weight: C:0.04 part, Si:3.4 part, Ni:5.8 part, S:0.4 part, Sc:1.6 part, K:2.5 part, Al:4.7 part, Mn:5.5 part, Fe:4.9 part;
Wherein the component of corrosion-resistant mixture is counted by weight: acrylic resin: 45 parts, carborundum: 12 parts, dolomol: 9 parts, propylene glycol monomethyl ether: 7 parts, titanium dioxide: 25 parts, butyl rubber: 3 parts, antioxidant 264: 6 parts;
The preparation method of described auxiliary agent: first prepare metal mixture and corrosion-resistant mixture respectively, the wherein preparation method of metal mixture: by C, Si, Ni, S, Sc, K, Al, Mn and Fe element drops in smelting furnace, by heating temperatures to 1050 DEG C, stir, and pass into nitrogen as protective gas, mixing time is 40min, then 3 hours are incubated, then adopt air-cooled, 520 DEG C are cooled to the air-cooled speed of 9 DEG C/s, then water-cooled is adopted, 220 DEG C are cooled to the water-cooled speed of 18 DEG C/s, last air cooling is to room temperature, then metallic object is taken out, put into ball mill, pulverize, cross 100 order numbers and obtain metal dust A,
The preparation method of corrosion-resistant mixture: by acrylic resin, carborundum, dolomol, propylene glycol monomethyl ether, titanium dioxide, butyl rubber, antioxidant 264 is put into reactor and is mixed, temperature is increased to 240 DEG C, stirs, mixing speed is 400r/min, and pass into nitrogen as protective gas, then air cooling is to room temperature, and modulation pH value is 7, then obtains corrosion-resistant mixture B;
Finally mixed in the ratio of 3:1 with corrosion-resistant mixture B by metal dust A, be heated to 780 DEG C, stir, be incubated 8 hours, then air cooling is to room temperature, then puts into ball mill, pulverizes, and crosses 200 order numbers, can obtain auxiliary agent.
4. employing passivating back according to claim 1 has the solar components of dust-proof anti-reflection function, it is characterized in that: comprise solar cell silicon substrate, is provided with passivation layer at described substrate back, and the component of described passivation layer is by mass percentage: SiO
2: 15.6%, AL
2o
3: 22.5%, Ni:5.7%, TiO
2: 12.4%, Cr:3.3%, Cu:3.8%, Zn:2.4%, Mg:3.4%, V:0.14%, Mn:0.13%, rare earth: 1.5%, surplus is auxiliary agent;
Wherein said rare earth component is by mass percentage: La:12.7%, Pr:4.6%, Sm:8.5%, Nd:15.8%, Gd:14.4%, Er:17.8%, and surplus is Ce;
Wherein auxiliary agent comprises metal mixture and corrosion-resistant mixture, and the component of described auxiliary agent is counted by weight: metal mixture: 85 parts, corrosion-resistant mixture: 25 parts;
Wherein the component of metal mixture is counted by weight: C:0.03 part, Si:3.3 part, Ni:5.6 part, S:0.3 part, Sc:1.5 part, K:2.4 part, Al:4.6 part, Mn:5.3 part, Fe:4.8 part;
Wherein the component of corrosion-resistant mixture is counted by weight: acrylic resin: 42 parts, carborundum: 10 parts, dolomol: 8 parts, propylene glycol monomethyl ether: 6 parts, titanium dioxide: 22 parts, butyl rubber: 3 parts, antioxidant 264: 5 parts;
The preparation method of described auxiliary agent: first prepare metal mixture and corrosion-resistant mixture respectively, the wherein preparation method of metal mixture: by C, Si, Ni, S, Sc, K, Al, Mn and Fe element drops in smelting furnace, by heating temperatures to 1030 DEG C, stir, and pass into nitrogen as protective gas, mixing time is 35min, then 2 hours are incubated, then adopt air-cooled, 510 DEG C are cooled to the air-cooled speed of 8 DEG C/s, then water-cooled is adopted, 210 DEG C are cooled to the water-cooled speed of 17 DEG C/s, last air cooling is to room temperature, then metallic object is taken out, put into ball mill, pulverize, cross 100 order numbers and obtain metal dust A,
The preparation method of corrosion-resistant mixture: by acrylic resin, carborundum, dolomol, propylene glycol monomethyl ether, titanium dioxide, butyl rubber, antioxidant 264 is put into reactor and is mixed, temperature is increased to 230 DEG C, stirs, mixing speed is 380r/min, and pass into nitrogen as protective gas, then air cooling is to room temperature, and modulation pH value is 7, then obtains corrosion-resistant mixture B;
Finally mixed in the ratio of 4:1 with corrosion-resistant mixture B by metal dust A, be heated to 760 DEG C, stir, be incubated 7 hours, then air cooling is to room temperature, then puts into ball mill, pulverizes, and crosses 200 order numbers, can obtain auxiliary agent.
5. have the solar components of dust-proof anti-reflection function based on the employing passivating back described in Claims 1-4 any one, it is characterized in that, the preparation method of described passivation layer carries out according to the following steps:
Step (1): first rare earth and auxiliary agent are all divided into two parts, by AL
2o
3, Ni, Cr, Cu, Zn, a rare earth and a auxiliary agent put into reactor, be heated to 300-350 DEG C, stir, and pass into nitrogen as protective gas, then air cooling is to room temperature, then put into ball mill to pulverize, cross 200 order numbers and obtain powder C, then adopt ALD method to be deposited into solar cell silicon substrate powder C;
Step (2): by elements Si O
2, TiO
2, Mg, V, Mn, a rare earth and a auxiliary agent put into reactor; be heated to 400-420 DEG C; stir; and pass into nitrogen as protective gas; then air cooling is to room temperature, then puts into ball mill and pulverizes, and crosses 200 order numbers and obtains powder D; then adopt ALD method to be deposited into solar cell silicon substrate powder D, and powder D layer is covered in powder C layer surface.
6. employing passivating back according to claim 5 has the solar components of dust-proof anti-reflection function, it is characterized in that: the temperature of described employing ALD method deposition is 300-320 DEG C.
7. employing passivating back according to claim 5 has the solar components of dust-proof anti-reflection function, it is characterized in that: the thickness of described powder C layer is 6-9nm.
8. employing passivating back according to claim 5 has the solar components of dust-proof anti-reflection function, it is characterized in that: the thickness of described powder D layer is 7-9nm.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101223020B1 (en) * | 2011-07-13 | 2013-01-17 | 박충권 | Thin film silicon solar cell moudle |
| CN103474495A (en) * | 2013-09-25 | 2013-12-25 | 韩华新能源（启东）有限公司 | Anti-dirt dustproof transparence-enhancing solar photovoltaic module and manufacturing method thereof |
| CN104201225A (en) * | 2014-08-20 | 2014-12-10 | 乐凯胶片股份有限公司 | Heat dissipation type solar cell back film |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101223020B1 (en) * | 2011-07-13 | 2013-01-17 | 박충권 | Thin film silicon solar cell moudle |
| CN103474495A (en) * | 2013-09-25 | 2013-12-25 | 韩华新能源（启东）有限公司 | Anti-dirt dustproof transparence-enhancing solar photovoltaic module and manufacturing method thereof |
| CN104201225A (en) * | 2014-08-20 | 2014-12-10 | 乐凯胶片股份有限公司 | Heat dissipation type solar cell back film |
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