CN105355638A - Method for screening amplitudes of saturated surface charges of bulk channel CCD - Google Patents
Method for screening amplitudes of saturated surface charges of bulk channel CCD Download PDFInfo
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- CN105355638A CN105355638A CN201510672778.1A CN201510672778A CN105355638A CN 105355638 A CN105355638 A CN 105355638A CN 201510672778 A CN201510672778 A CN 201510672778A CN 105355638 A CN105355638 A CN 105355638A
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- light source
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- 238000000034 method Methods 0.000 title claims abstract description 16
- 238000012216 screening Methods 0.000 title claims abstract description 14
- 229920006395 saturated elastomer Polymers 0.000 title abstract description 6
- 206010019133 Hangover Diseases 0.000 claims description 24
- 230000008859 change Effects 0.000 claims description 3
- 238000005259 measurement Methods 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 4
- 230000004044 response Effects 0.000 abstract description 3
- 238000002474 experimental method Methods 0.000 abstract description 2
- 238000001444 catalytic combustion detection Methods 0.000 abstract 3
- 238000012546 transfer Methods 0.000 description 11
- 238000003384 imaging method Methods 0.000 description 4
- 239000013049 sediment Substances 0.000 description 4
- 238000010998 test method Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000010351 charge transfer process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
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- Microelectronics & Electronic Packaging (AREA)
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- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
The invention discloses a method for screening amplitudes of saturated surface charges of a bulk channel CCD. For different CCDs with the same model number capable of generating the surface saturation effect, the relative sizes of the saturated surface charges can be judged by comparing the relative lengths of trailing signals generated to a same signal response; and for the same signal response, the longer the trailing signal is, the smaller the size of the saturated surface charge is. The screening method disclosed by the invention has the characteristics of being simple and reliable in principle and high in efficiency; and the measurement result can be directly applied to a highlight measurement and an effect experiment of the CCD.
Description
Technical field
The invention belongs to a kind of device performance method of testing, be specifically related to a kind of smear difference in length to test the method for CCD surface saturation charge relative size.
Background technology
Surface is saturated to be referred under specific driving, the signal charge in bulk channel CCD pixel, along with the increase of quantity, before overflowing outside this pixel, first can contact the interface of semiconductor layer and insulating barrier in CCD.In one pixel, quantity during the lucky contact interface of signal charge, is called surperficial saturation charge.In the high light imaging applications of CCD, CCD surface saturation charge has important reference value for evaluating CCD device imaging dynamic range with the threshold value can bearing high light irradiation.
Due to the surface of CCD saturated except with device self structure mutually outside the Pass, also to be subject to the impact of its drive voltage amplitude, existing theoretical calculation or the method for measurement loaded based on electric charge, be difficult to the difference accurately obtaining surperficial saturation charge between different components, limit the application of CCD in high light imaging.
Summary of the invention
The present invention is based on the smearing of bulk channel CCD surface sediment signal charge, a kind of method of testing CCD surface saturation charge relative size is proposed, can measure the relative magnitude of the surperficial saturation charge of finished product CCD device, the screening being used for high light imaging applications for CCD device provides a kind of measurement means easily and effectively.
A screening technique for bulk channel CCD surface saturation charge amplitude size, comprises the following steps:
[1] to be limited by diaphragm or the mode such as lens convergence, by the center of the light irradiation of stable output at CCD device photosurface, wherein the hot spot yardstick of light source is less than CCD device photosurface yardstick;
[2] regulate the intensity of light source, make to occur that hot spot trails, document image in CCD output image;
[3] keep the output intensity of light source constant, change CCD device, and make light irradiation in the identical position of CCD device;
[4] the hangover pixel quantity comprised between spot center and streak image tail end in reading images, larger according to hangover pixel quantity, the principle that corresponding CCD surface saturation charge is less, screening obtains required CCD device.
In the screening technique of above-mentioned bulk channel CCD surface saturation charge amplitude size, the laser of light source to be light intensity be Gaussian Profile.
In the screening technique of above-mentioned bulk channel CCD surface saturation charge amplitude size, the wavelength of laser is visible ray.
The present invention has following beneficial effect:
The invention provides a kind of method of testing for same model, different CCD device surface saturation charge and screening, by comparator device to same signal response produce hangover signal length the relative size judging device surface saturation charge, have the advantages that principle is simple and reliable, efficiency is high, its measurement result can be directly used in the measurement of CCD device high light and effect experiment.
Accompanying drawing explanation
Fig. 1 is the more weak laser facula of intensity of bulk channel CCD camera shooting;
Fig. 2 is the phenomenon that after laser-enhanced, Fig. 1 hot spot presents hangover;
Fig. 3 is the phenomenon that laser beam continues to strengthen rear Fig. 2 trailing length increase;
The hangover generation mechanism schematic diagram of the mono-picture element signal of Fig. 4.
Reference numeral: 11 is laser facula, and 12 is laser facula trailing length.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is further detailed explanation.
Under specific driving, the signal charge in bulk channel CCD pixel, along with the increase of quantity, before overflowing outside this pixel, first can contact the interface of semiconductor layer and insulating barrier in CCD.In one pixel, quantity during the lucky contact interface of signal charge, is called surperficial saturation charge; After the quantity of signal charge exceedes surperficial saturation charge, a part wherein will be deposited in interface, is called surface sediment signal charge.In the process of signal charge transfer, due to the effect of interfacial state, surface sediment signal charge has the transfer indfficiency rate of can not ignore, thus causes the conditions of streaking of picture element signal.When in a pixel, the quantity of signal charge is less than or equal to surperficial saturation charge, then there is not surface sediment signal charge in this pixel, can not form hangover.
Suppose in CCD, only have a pixel to be subject to irradiation, wherein the integration gained quantity of electric charge is Q
s, then the maximum length (in units of pixel count) of this picture element signal and hangover thereof is
n
max＝ceil(Q
S/Q
sf)
Wherein ceil () is forward bracket function, Q
sffor the surperficial saturation charge of this CCD.For identical signal charge amount Q
s, Q
sflarger, then n
maxless; Q
sfless, then n
maxlarger.
Signal and trailing length n thereof is made to reach maximum n
max, need to allow signal and hangover thereof in CCD, shift abundant number of times (once transfer refers to signal onwards transmission unit), to make the signal charge amount Q in signal and hangover pixel thereof
s-anybe reduced to because of transfer indfficiency
Q
S-any≤Q
sf
Even if but n does not reach maximum yet, it and CCD surface saturation charge Q
sfrelative size relation also with n
maxunanimously.This is because, in the transfer transmitting procedure of signal and hangover thereof, the signal charge amount Q in hangover least significant end pixel that and if only if
s-endmeet
Q
S-end>Q
sf
Time, when next time shifts, n just can increase.Therefore Q
sfless, then this condition more easily meets, and n increases faster; Otherwise n increases slower.Certainly, transfer number is larger, then n is because of Q
sfthe difference that difference causes is more obvious.
The method of a kind of test of the present invention and comparing bulk raceway groove CCD surface saturation charge relative size, comprises the following steps:
[1] to be limited by diaphragm or the mode such as lens convergence, by the signal localization of a stabilized light source at the middle part of CCD photosurface, both made signal experience more transfer number before output, and made again the overall picture presenting signal and hangover thereof in the output.
[2] regulate the intensity of light source, occur that hot spot trails in making CCD export, and make the hangover of hot spot exceed the region of former hot spot, preserve this image or waveform.
[3] keep the intensity of light source constant with distribution, change CCD device, note the position making laser irradiation identical, preserve corresponding streak image or waveform.
[4] relative size of trailing length in [2], [3] gained image or waveform is compared, the usual hangover pixel quantity with comprising between hot spot Radiation Center and streak image tail end represents, trailing length is longer, hangover pixel quantity is larger, and corresponding CCD surface saturation charge is less.
As shown in Figure 1, with the visible light lasers irradiation of Gaussian Profile to CCD surface, when laser is more weak, when the quantity of electric charge in all pixels that hot spot covers is all less than or equal to surperficial saturation charge, spot signal there will not be hangover.When laser is stronger, when the quantity of electric charge in the partial pixel that hot spot covers is higher than surperficial saturation charge, spot signal will there will be hangover, as shown in Figure 2.Work as laser-enhanced, when the quantity of electric charge in pixel increases, hangover also can increase, as shown in Figure 3.For Gauss's hot spot, the light intensity value of spot center is maximum, and therefore the hangover of its spot center is the longest, therefore whole hangover is front wide and rear narrow shape.
, by a simple example, the forming process that laser facula trails is described below, thus understands the principle judging CCD surface saturation charge relative size according to the relative size of trailing length further.
As shown in Figure 4, if CCD only the 5th pixel be subject to laser irradiation and produce quantity of electric charge Q
s5-0', and have
Q
S5-0'>Q
sf
Then when signal the 1' time transfer, Q
s5-0'a part of Q
s4-1'be transferred to the 4th pixel, residue Q
s5-1'stay the 5th pixel.Suppose there is following relation
Q
S4-1'>Q
sf
Q
S5-1'<Q
sf
Then when signal the 2' time transfer, Q
s4-1'a part of Q
s3-2'be transferred to the 3rd pixel, residue Q
s4-2'-Lstay the 4th pixel; Meanwhile, Q
s5-1'all be transferred to the 4th pixel; Now, the total charge dosage in the 4th pixel is
Q
S4-2'＝Q
S4-2'-L+Q
S5-1'
Continue hypothesis and have following relation
Q
S4-2'>Q
sf
Q
S3-2'＝Q
sf
Then when the 3' time transfer, Q
s3-2'all be transferred to the 2nd pixel, be again labeled as Q
s2-3'; Q
s4-2'a part of Q
s3-3'be transferred to the 3rd pixel, residue Q
s4-3'stay the 4th pixel.Suppose now have relation
Q
S2-3'＝Q
sf
Q
S3-3'＝Q
sf
Q
S4-3'≤Q
sf
Then in follow-up charge transfer process, signal charge no longer produces transfer indfficiency, and in whole CCD, the distribution of signal charge no longer changes, and signal and hangover thereof reach maximum length.That is, for identical input signal, the surperficial saturation charge Q of CCD
sfless, then the length of signal and hangover thereof is larger.
Claims (3)
1. a screening technique for bulk channel CCD surface saturation charge amplitude size, is characterized in that, comprise the following steps:
[1] to be limited by diaphragm or the mode such as lens convergence, by the center of the light irradiation of stable output at CCD device photosurface, wherein the hot spot yardstick of light source is less than CCD device photosurface yardstick;
[2] regulate the intensity of light source, make to occur that hot spot trails, document image in CCD output image;
[3] keep the output intensity of light source constant, change CCD device, and make light irradiation in the identical position of CCD device;
[4] the hangover pixel quantity comprised between spot center and streak image tail end in reading images, larger according to hangover pixel quantity, the principle that corresponding CCD surface saturation charge is less, screening obtains required CCD device.
2. the screening technique of bulk channel CCD according to claim 1 surface saturation charge amplitude size, is characterized in that: the laser of described light source to be light intensity be Gaussian Profile.
3. the screening technique of bulk channel CCD surface according to claim 2 saturation charge amplitude size, is characterized in that: the wavelength of described laser is visible ray.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510672778.1A CN105355638B (en) | 2015-10-16 | 2015-10-16 | The screening technique of the surfaces bulk channel CCD saturation charge amplitude size |
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|---|---|---|---|
| CN201510672778.1A CN105355638B (en) | 2015-10-16 | 2015-10-16 | The screening technique of the surfaces bulk channel CCD saturation charge amplitude size |
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|---|---|
| CN105355638A true CN105355638A (en) | 2016-02-24 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107197236A (en) * | 2017-06-28 | 2017-09-22 | 中国科学院新疆理化技术研究所 | A kind of charge coupling device charge transfer effciency Orbital detection method based on hot pixels |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5222000B2 (en) * | 2007-03-30 | 2013-06-26 | パナソニック株式会社 | Image sensor |
| US20140084142A1 (en) * | 2010-03-25 | 2014-03-27 | Sony Corporation | Solid-state image taking device and electronic apparatus |
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2015
- 2015-10-16 CN CN201510672778.1A patent/CN105355638B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5222000B2 (en) * | 2007-03-30 | 2013-06-26 | パナソニック株式会社 | Image sensor |
| US20140084142A1 (en) * | 2010-03-25 | 2014-03-27 | Sony Corporation | Solid-state image taking device and electronic apparatus |
Non-Patent Citations (1)
| Title |
|---|
| 张检民: "《行间转移型CCD激光干扰效应阂值估算方法》", 《光学学报》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107197236A (en) * | 2017-06-28 | 2017-09-22 | 中国科学院新疆理化技术研究所 | A kind of charge coupling device charge transfer effciency Orbital detection method based on hot pixels |
| CN107197236B (en) * | 2017-06-28 | 2018-08-14 | 中国科学院新疆理化技术研究所 | A kind of charge coupling device charge transfer effciency Orbital detection method based on hot pixels |
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