CN103489886A - TDI-CCD pixel structure capable of improving imaging quality - Google Patents
TDI-CCD pixel structure capable of improving imaging quality Download PDFInfo
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- CN103489886A CN103489886A CN201310384700.0A CN201310384700A CN103489886A CN 103489886 A CN103489886 A CN 103489886A CN 201310384700 A CN201310384700 A CN 201310384700A CN 103489886 A CN103489886 A CN 103489886A
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Abstract
The invention relates to a TDI-CCD pixel structure capable of improving imaging quality, belongs to the technical field of CCD device manufacturing and application, and relates to the geometrical shape of TDI-CCD pixels. According to the TDI-CCD pixel structure capable of improving the imaging quality, under the situation that the area occupied by an original pixel is not changed, the TDI-CCD non-photosensitive area between adjacent pixels in the TDI direction accounts for more than 75% of the area of the original pixel, namely, the size of the photosensitive area of the pixels in the TDI direction is reduced, and the TDI-CCD provided with the pixels can effectively improve the imaging quality.
Description
Technical field
The invention belongs to the manufacture of CCD device and applied technical field, be specifically related to a kind of TDI-CCD pixel structure that improves image quality.
Background technology
TDI(Time Delay Integration) CCD(time delay integration charge coupled device) utilize multistage photosensitive unit to carry out repeatedly integration to same moving target, can strengthen the collection of light signal, it has low noise, the advantages such as wide dynamic range, be widely used in imaging and detect, the fields such as Aeronautics and Astronautics remote sensing.
The TDI-CCD operation principle is: suppose that TDI-CCD has m * n pixel, m is horizontal direction pixel number, and the pixel number that n is vertical direction is also corresponding integration progression.During imaging, along with the relative motion between imaging system and target, TDI-CCD is from 1 grade of n level to the step by step to same target sensitization, and electric charge is accumulation step by step also, and when the sensitization of afterbody pixel finishes, stored charge is exported, and completes the imaging to this target.If there is no non-photosensitive region between pixel, fill factor, curve factor is 100%.Traditional view thinks, fill factor, curve factor is higher, and imaging effect is better, highly sensitive.But it is higher that actual conditions are fill factor, curve factors, although sensitivity is higher, image quality is variation on the contrary.
Due to ideally, the prerequisite that obtains high quality graphic is to guarantee that the capable transfer velocity of TDI-CCD and the movement velocity of focal plane epigraph are consistent, in a line exposure cycle, the pixel of TDI-CCD keeps relative static with target on the TDI direction.It is discrete way that but the row of TDI-CCD shifts, for the TDI-CCD that is 100% for traditional fill factor, curve factor, this will cause the single file pixel, and actual in a line migration period what collect is the target area light energy that 2 row pixels are corresponding, and the time for exposure length that in this zone, each point obtains is unequal, the image obtained under this condition has been subject to pollution, is referred to as picture and moves.According to one's analysis, this picture moves exposure and accounts for and obtain 1/4 of target exposure.
Summary of the invention
In order to solve the technical problem existed in prior art, the present invention in the situation that do not change former pixel area occupied, by dwindling the photosensitive region size of pixel on the TDI direction, provides a kind of TDI-CCD pixel structure that improves image quality.
In order to solve the problems of the technologies described above, technical scheme of the present invention is specific as follows:
A kind of TDI-CCD pixel structure that improves image quality, the structural photosensitive region of this pixel meets:
Width on this photosensitive region TDI direction is less than or equal to 25% of width on pixel structure TDI direction.
In technique scheme, 12.5% of the length that the width of this photosensitive region is the pixel structure on the TDI direction.
The present invention has following beneficial effect:
A kind of TDI-CCD pixel structure that improves image quality of the present invention, in the situation that do not change former pixel area occupied, make TDI-CCD non-photosensitive region between adjacent picture elements on the TDI direction account for more than 75% of preimage elemental area, dwindle the photosensitive region size of pixel on the TDI direction, TDI-CCD with this shape pixel, can improve image quality effectively.
The accompanying drawing explanation
Below in conjunction with the drawings and specific embodiments, the present invention is described in further detail.
Fig. 1 is the TDI-CCD structural representation that m * n level fill factor, curve factor is 100%;
Fig. 2 is single pixel structural representation that fill factor, curve factor is 100%;
Fig. 3 is single pixel structural representation of the present invention;
Fig. 4 is m of the present invention * n level TDI-CCD structural representation.
Embodiment
Invention thought of the present invention is:
The TDI-CCD pixel structure that improves image quality of the present invention, in the situation that do not change former pixel area occupied, by making TDI-CCD non-photosensitive region between adjacent picture elements on the TDI direction account for more than 75% of preimage elemental area, dwindle the photosensitive region size of pixel on the TDI direction, effectively improve image quality.
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing, the present invention is further described in detail.
Fig. 1 is the TDI-CCD structural representation that m * n level fill factor, curve factor is 100%, m * n pixel 101, consists of, and as shown in Figure 2, pixel 201 is of a size of b * c, and whole pixel surface is photosensitive region.Reduce the photosensitive region on the TDI direction, as shown in Figure 3, pixel photosensitive area 301 is of a size of a * c, the non-photosensitive area 302 of pixel be of a size of (b – a) * c.The TDI-CCD structural representation of the m after improving * n level as shown in Figure 4.
When a=b/4, single picture amount of moving will be reduced to 1/16, and the effective image exposure is original 5/16; When a=b/8, will be reduced to 1/32 as the amount of moving, the effective image exposure is original 31/192.TDI-CCD pixel structure of the present invention can improve image quality effectively.
In this embodiment, only need meet the width a of photosensitive region on the TDI direction and be less than or equal to 25% * b and can realize goal of the invention of the present invention, do not repeat them here.
In above-mentioned embodiment:
Described TDI-CCD: time delay integration charge coupled device;
Described pixel: the photosensitive unit of minimum in TDI-CCD;
Described TDI direction: a direction of pixel is the pixel array vertical direction of TDI-CCD, is also pixel electric charge shift direction line by line, with the moving direction of picture on the CCD image planes, is consistent;
Described photosensitive region: the zone that can receive light energy on the CCD image planes in pixel;
Described non-photosensitive region: the zone that does not receive light energy on the CCD image planes in pixel;
Adjacent pixel on the pixel array vertical direction of described adjacent picture elements: TDI-CCD.
It is to be noted: the photosensitive region size choosing of TDI-CCD pixel on the TDI direction be how little suitable, depends on the CCD manufacturing technology level fully.Photosensitive region perpendicular to the length on the TDI direction and pixel structure perpendicular to the length on the TDI direction can be identical also can be unequal.The present invention, by having reduced the photosensitive region size on the TDI direction, although can improve image quality, can not improve pixel resolution.The present invention causes sensitivity to solve by increasing progression.
Obviously, above-described embodiment is only for example clearly is described, and is not the restriction to execution mode.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here exhaustive without also giving all execution modes.And the apparent variation of being extended out thus or change are still among the protection range in the invention.
Claims (2)
1. the TDI-CCD pixel structure that can improve image quality, is characterized in that, the structural photosensitive region of this pixel meets:
Width on this photosensitive region TDI direction is less than or equal to 25% of width on pixel structure TDI direction.
2. the TDI-CCD pixel structure that improves image quality according to claim 1, is characterized in that 12.5% of the length that the width of this photosensitive region is the pixel structure on the TDI direction.
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| CN201310384700.0A CN103489886A (en) | 2013-08-29 | 2013-08-29 | TDI-CCD pixel structure capable of improving imaging quality |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106791281A (en) * | 2017-01-06 | 2017-05-31 | 西安中科飞图光电科技有限公司 | IMC method, image motion compensation device and imaging device |
| CN107409179A (en) * | 2015-03-16 | 2017-11-28 | 索尼公司 | The driving method and electronic equipment of solid state image pickup device, solid state image pickup device |
| CN110676279A (en) * | 2019-10-10 | 2020-01-10 | 中国电子科技集团公司第四十四研究所 | High quantum efficiency CCD structure |
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| CN1535387A (en) * | 2000-12-22 | 2004-10-06 | ��ɫ��Ӱ��˾ | Radiation imaging system, device and method for scan imaging |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107409179A (en) * | 2015-03-16 | 2017-11-28 | 索尼公司 | The driving method and electronic equipment of solid state image pickup device, solid state image pickup device |
| CN107409179B (en) * | 2015-03-16 | 2020-06-16 | 索尼公司 | Solid-state imaging device, driving method of solid-state imaging device, and electronic apparatus |
| CN106791281A (en) * | 2017-01-06 | 2017-05-31 | 西安中科飞图光电科技有限公司 | IMC method, image motion compensation device and imaging device |
| CN110676279A (en) * | 2019-10-10 | 2020-01-10 | 中国电子科技集团公司第四十四研究所 | High quantum efficiency CCD structure |
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Application publication date: 20140101 |