CN102595065B - Wide dynamic range time delay integration CMOS image sensor - Google Patents
Wide dynamic range time delay integration CMOS image sensor Download PDFInfo
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- CN102595065B CN102595065B CN 201210063934 CN201210063934A CN102595065B CN 102595065 B CN102595065 B CN 102595065B CN 201210063934 CN201210063934 CN 201210063934 CN 201210063934 A CN201210063934 A CN 201210063934A CN 102595065 B CN102595065 B CN 102595065B
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Abstract
The invention relates to a complementary metal-oxide-semiconductor (CMOS) image sensor, and aims to provide a method for improving time delay integration CMOS image sensor dynamic range, which can synchronously meet image requirements under conditions of low light intensity and high light intensity, and can achieve the purpose of sensor dynamic range improvement. The invention adopts a technical scheme that the wide dynamic range time delay integration CMOS image sensor is composed of an image array, an analog signal read-out circuit, an analog conversion circuit and a time sequence control circuit, and is characterized in that a pixel array is provided with various types of pixel units, the same row of pixels are provided with pixel units with the same type of structure, namely different types of pixel units can not be in the same row. The invention is mainly applicable to the design and the manufacture of a semiconductor image sensor.
Description
Technical field
The present invention relates to a kind of raising complementary metal oxide semiconductors (CMOS) (Complementary Metal-Oxide-Semiconductor, CMOS) method of image sensor dynamic range, be particularly related to a kind of raising time delays integration (Time Delay Integration, TDI) method of the dynamic range of type cmos image sensor, specifically, relate to Wide dynamic range time delay integration CMOS image sensor.
Background technology
Cmos image sensor mainly by pel array, analog signal read, analog-to-digital conversion and sequential control circuit etc. partly form.Wherein, pel array is the important component part of cmos image sensor.The difference of the number of transistors that comprises according to pixel cell structure in pel array can be divided into it 3 pipe (3T) structure C mos image sensors and 4 tubular construction cmos image sensors etc.
Fig. 1 is the cmos image sensor pixel cell structure schematic diagram of 4 tubular constructions, each pixel cell contains transfer tube, reset transistor, source follower and row selects these 4 transistors of pipe, also comprise simultaneously a photodiode (photodiode, PD) and one floating empty diffusion node (floating diffusion, FD).Each pixel cell provides operating voltage by power vd D, and is connected with the sampling reading circuit with sequential control circuit.
The course of work of 4 pipe pixels is:
By control circuit, transfer tube and reset transistor are opened, the electronics in PD is with depleted, and the FD node also will be reset to high level simultaneously;
Transfer tube and reset transistor are turn-offed, and PD receives illumination and produces and accumulate light induced electron, and the time of this section accumulation light induced electron becomes the time of integration;
Before closing on end the time of integration, reset transistor is opened a period of time and turn-offed, and the FD node potential of this moment will raise, and select pipe to be read out by source follower and row, and as one of them signal of correlated-double-sampling (correlated double sampling, CDS);
Transfer tube is opened, and finish time of integration this moment, and the electronics that produces in PD will be transferred to the FD node, and the current potential of this node is reduced, and this current potential selects pipe to be read out by source follower and row, and as another signal of CDS;
It is poor that twice signal potential that CDS is obtained done, and just obtained the signal voltage value corresponding with light intensity, and this magnitude of voltage is converted to digital quantity by analog to digital converter (Analog to digital converter, ADC) and is output.
So just completed the pixel course of work one time.In said process, row selects pipe only just to open when signal is read by CDS.For whole pel array, row selects pipe to open successively in order with behavior unit, and corresponding signal voltage value is read and digitlization successively according to said sequence, and forms an entire image finally by crossing to process.
For common array CMOS image sensor, can think that in the gatherer process of a two field picture, imageing sensor and subject are without relative motion.For time delays integral form imageing sensor, the motion that remains a constant speed of itself and subject can be carried out multiexposure, multiple exposure to same target, realizes higher signal to noise ratio.The course of work more complicated that it is concrete, Fig. 2 has provided the simplified diagram of 4 grades of TDI courses of work.A, B, C and D represent 4 abstract testees, and the direction of motion of testee is parallel with the column direction of pixel.
The course of work of TDI is described with the pel array of 1 row 4 row:
At T constantly, the 1st row pixel collects object A, and signal is read is quantized to be placed in accumulator 1;
At 2T constantly, the 1st row pixel collects object B, and signal is read is quantized to be placed in accumulator 2, and the 2nd row pixel collects object A, and signal is read is quantized to be placed in accumulator 1;
At 3T constantly, the 1st row pixel collects object C, and signal is read is quantized to be placed in accumulator 3, the 2nd row pixel collects object B, and signal is read quantized to be placed in accumulator 2, the 3rd row pixel collects object A, and signal is read is quantized to be placed in accumulator 1;
At 4T constantly, the 1st row pixel collects object D, and signal is read quantized to be placed in accumulator 4, the 2nd row pixel collects object C, and signal is read is quantized to be placed in accumulator 3, the 3rd row pixel collects object B, and signal is read quantized to be placed in accumulator 2, the 4th row pixel collects object A, and signal is read is quantized to be placed in accumulator 1, accumulator 1 is completed the cumulative process to the output signal of object A, and accumulation result is exported.Accumulator 1 is cleared, and prepares cumulative process next time.
The concise and to the point course of work as above-mentioned TDI type cmos image sensor can see, each object will be exposed 4 times, and the signal that each exposure produces also will be added up, and produces final output signal by summation.
Dynamic range (Dynamic Range, DR) is one of index of weighing the cmos image sensor performance, and the largest light intensity signal that it can be surveyed by transducer and the ratio of minimum intensity of light signal are estimated.The minimum intensity of light signal that transducer can be surveyed is limited by dark current levels and noise level usually, therefore enlarges dynamic range and mainly considers from improving maximum detectable light intensity levels.
By the imageing sensor operation principle of above-mentioned 4 tubular constructions as can be known, photogenerated charge produces in photodiode PD, enters floating empty diffusion node FD by transfer tube, and completes electric charge to the conversion of voltage.It is that the optical charge of Q is injected into the FD node that electric capacity is C that said process can be regarded as the electric weight that will produce in PD, and produces the change in voltage of Q/C at FD.And due to the restriction of circuit structure, the voltage of FD node can the unconfined variation along with the increase of Q, and the voltage of final FD can reach capacity in a certain value, also can have a saturation value through the signal after correlated-double-sampling accordingly.For same pixel, PD produces photogenerated charge Q and is approximated to proportional relation with the detection light intensity.So can think, before reaching capacity, there are proportional relation in light intensity and output signal; After reaching capacity, output signal will keep a definite value.Fig. 3 shows two kinds of identical curves with light intensity-output signal of Different Slope of the time of integration, has indicated simultaneously the impact of dark current and noise in figure.
As shown in Figure 3, the slope that reduces light intensity and output signal curve can improve dynamic range, and this moment, signal voltage was slack-off with the light intensity variation, and when reaching capacity, corresponding light intensity value becomes large.At this moment, the output signal under low light intensity will have greatly and can be covered by dark current and noise, make the resolution under low light intensity very low.If slope of a curve in Fig. 3 is improved, the output signal under low light intensity will break through the restriction of dark current and noise faster, make that under low light intensity, sensitivity and resolution are improved.But the output signal of this moment can early reach capacity, and has limited the dynamic range of transducer.
Summary of the invention
The present invention is intended to solution and overcomes the deficiencies in the prior art, a kind of method that improves the time delay integration CMOS image sensor dynamic range is provided, can satisfy simultaneously the imaging requirements under low light intensity condition and high light intensity condition, reach the purpose that improves dynamic range of sensor.
Wide dynamic range time delay integration CMOS image sensor, transducer has a kind of Wide dynamic range time delay integration CMOS image sensor, by pel array, analog signal read, analog-to-digital conversion and sequential control circuit form, pel array has polytype pixel cell, the pixel cell that has the same type structure with delegation's pixel, namely dissimilar pixel cell only may appear between different row.
Multirow pixel with certain class same type pixel cell is adjacent arrangement in pel array; The multirow pixel that perhaps has certain class same type pixel cell is had delegation or the arrangement that pixel is separated of multirow another type in pel array.
Pel array has dissimilar pixel cell, shows that the photosensitive area area of pixel is different; Perhaps pel array has different dot structures, shows that the floating empty diffusion node electric capacity of pixel is different; Perhaps pel array has different photosensitive area areas and different floating empty diffusion node electric capacity.
Pel array is the pel array that adopts 16 row 128 row, pel array is made of the pixel cell of 3 types, and arrange as follows: 1 to 6 row adopts the pixel cell of the 1st type, and 7 to 12 row adopt the pixel cell of the 2nd type, and 13 to 16 row adopt the pixel cell of the 3rd type; This pixel cell of 3 types is except having different FD node capacitor values, and other structure is identical; The ratio of the FD node capacitor of above-mentioned 3 types of pixel cells is 1: 4: 16, if namely the FD node capacitor of pel array 1 to 6 row is C, the FD node capacitor of 7 to 12 row pixels is 4C so, and the FD node capacitor of 13 to 16 row pixels is 16C.
Technical characterstic of the present invention and effect:
The method of raising TDI type cmos image sensor dynamic range involved in the present invention takes full advantage of the working method of TDI, introduces complicated control circuit, only dot structure has been done the differentiation processing, realizes simple.
Description of drawings
Fig. 1: 4 tubular construction cmos image sensor pixel cell structure schematic diagrames.
Fig. 2: TDI type imageing sensor operation principle schematic diagram.
Fig. 3: two kinds of curves with light intensity and output signal relation of Different Slope.
Fig. 4: through light intensity and the output signal relation curve after merging.
Fig. 5 (a): the light intensity that different PD photosensitive areas are corresponding and photogenerated charge curve, and corresponding photogenerated charge and the output voltage curve of different FD node capacitor.
In Fig. 5 (b): Fig. 5 (a), different curves are combined, the curve of the light intensity that obtains and FD output voltage.
Fig. 6: the method schematic diagram that reduces the PD photosensitive area.
Fig. 7: in pel array, dissimilar pixel cell is arranged schematic diagram
Embodiment
The cmos image sensor that the present invention relates to is operated under the TDI pattern, requires transducer and subject to have relative motion, and the direction of motion is parallel with the column direction of pel array.Transducer has polytype pixel cell, and has the structure of same type with delegation's pixel, and namely dissimilar pixel cell only may appear between different row.Have dissimilar pixel cell, can become the arrangement of piece in pel array, the pixel cell that namely has same type is positioned at the same area in pel array; Can be in pel array dispersed arrangement, the pixel cell interlacing in pel array that namely has same type is arranged; Can be also that above-mentioned two kinds of arrangement modes mix use.
Multirow pixel with certain class same type pixel cell is adjacent arrangement in pel array; The multirow pixel that perhaps has certain class same type pixel cell is had that delegation or multirow another type pixel are separated and dispersed arrangement in pel array; The multirow pixel that perhaps has certain class same type pixel cell, some is adjacent arrangement in pel array, a part is had that delegation or multirow another type pixel separate and dispersed arrangement in pel array in addition.For example, for the pel array with 12 row that two kinds of dot structures are arranged, if these two kinds of dot structures occupy respectively 6 row pixels, their arrangement may be 1 to 6 behavior the first dot structure, 7 to 12 behavior the second dot structures so; Perhaps odd number behavior the first dot structure, even number behavior the second dot structure; Perhaps the 1st, 2,3,5,9,10,12 behavior the first dot structures, all the other behavior the second dot structures; Other spread pattern that perhaps comprises in claims.
Transducer has dissimilar pixel cell, shows that the photosensitive area area of pixel is different; Perhaps transducer has different dot structures, shows that the floating empty diffusion node electric capacity of pixel is different; Perhaps transducer has different photosensitive area areas and different floating empty diffusion node electric capacity.For example, two kinds of dissimilar pixels, the ratio that can be the photosensitive area area is 1; 2; Perhaps two kinds of dissimilar pixels, can be that the ratio of floating empty diffusion node electric capacity is 2: 1; Or two kinds of dissimilar pixels, the ratio that can be the photosensitive area area is 1: 2, the ratio of floating empty diffusion node electric capacity is 2: 1 simultaneously.
The dissimilar dot structure that relates in the present invention is in order to obtain different light intensity and the relation curve of output voltage, and this slope of a curve is subjected to generation and the FD node capacitor joint effect of photogenerated charge.Increase the PD photosensitive area, the photogenerated charge number that produces within the identical time of integration increases; Reduce FD electric capacity, in the situation that accept the identical charges amount, the increase of FD node voltage rate of change.Therefore, increase the PD photosensitive area, reduce FD electric capacity or two kinds of methods are used simultaneously, can improve slope of a curve.On the contrary, reduce the PD photosensitive area, increase FD electric capacity or both use simultaneously, can reduce slope of a curve.Appropriately choosing of PD photosensitive area and FD node capacitor can be combined into different light intensity and the curve of Voltage-output, as shown in Figure 5.
It is to be noted, in order to make PD have relatively large charge storage, when saturated with assurance PD, the electronics of storage can make the generation of FD node saturated, the change of PD photosensitive area, be to realize by the shielded area that changes the PD upper metal layer, rather than realize by the size that reduces PD.Fig. 6 has expressed the method that reduces the PD photosensitive area.
Above-mentioned dissimilar dot structure can be that the area of sensor devices is different, or the electric capacity of floating empty diffusion node be different, or neither same.Described sensor devices is photodiode PD.Floating empty diffusion node electric capacity comprises the junction capacitance of the N-type diffusion region that transfer tube and reset transistor are overlapping, and the gate capacitance of the source follower grid end that is attached thereto, and changes these two composition electric capacity and can regard the electric capacity that has changed the FD node as.By rational design, the dot structure that these are dissimilar, some has higher sensitivity, is suitable for the imaging to the darker position of object; Some has lower sensitivity, is suitable for the imaging of object than the highlights position.
Transducer is during with the TDI work pattern, and the output voltage signal of the different rows pixel that same object is exposed is adding up through after analog-to-digital conversion.Because pel array has dissimilar pixel cell, and within the identical time of integration, these different pixel cells have different light intensity and the relation curve of output voltage, therefore the output of each row is through after cumulative, the relation curve of its light intensity and output voltage will be optimized, can satisfy simultaneously the imaging requirements under low light intensity condition and high light intensity condition, reach the purpose that improves dynamic range of sensor.
Clear for the purpose, technical solutions and advantages of the present invention are more seen, the below will describe in detail further to embodiment of the present invention.
This example adopts the pel array of 16 row 128 row, as shown in Figure 7.Pel array is made of the pixel cell of 3 types, and arranges as follows: 1 to 6 row adopts the pixel cell of the 1st type, and 7 to 12 row adopt the pixel cell of the 2nd type, and 13 to 16 row adopt the pixel cell of the 3rd type.This pixel cell of 3 types is except having different FD node capacitor values, and other structure is identical.The ratio of the FD node capacitor of above-mentioned 3 types of pixel cells is 1: 4: 16, if namely the FD node capacitor of pel array 1 to 6 row is C, the FD node capacitor of 7 to 12 row pixels is 4C so, and the FD node capacitor of 13 to 16 row pixels is 16C.
Because the pixel cell of 3 types of above-mentioned pel array has different FD node capacitor values, therefore their sensitivity also can produce corresponding difference, 1 to 6 row pixel has higher sensitivity, be suitable for the imaging to the darker position of object, 13 to 16 row pixels have lower sensitivity, be suitable for the imaging of object than the highlights position, 7 to 12 row pixels have moderate sensitivity, are suitable for the position imaging to the object intermediate light.Under the TDI working method, arbitrary position of object all can be subject to the repetition imaging of every delegation pixel of pel array, and these Digital output signals that repeat all row of imaging are added up, and has just completed the imaging to this position of object.
Need to prove:
1. this example adopts the dot structure of 16 row 128 row, as adopts the picture element array structure of other line number and columns, does not affect the realization of the embodiment of the present invention.
2. adopt 3 kinds of dissimilar pixel cell structures in this example in pel array, it is also feasible also can adopting the dissimilar pixel cell structure more than 2 kinds or 3 kinds, does not affect the realization of the embodiment of the present invention.
3. in this example, the ratio of the line number of dissimilar pixel cell is 3: 3: 2, can be according to the application scenario of imageing sensor in practical application, quantitative proportion to pixel cell with different sensitivity is further optimized, and this does not affect the realization of the embodiment of the present invention.
4. in this example, dissimilar pixel cell is arranged according to the one-tenth piece, and the pixel cell that namely has same type is positioned at the same area of pel array, and the form that yet can adopt dissimilar pixel cell interlacing to arrange does not affect the realization of the embodiment of the present invention.
Claims (4)
1. Wide dynamic range time delay integration CMOS image sensor, by pel array, analog signal is read, analog-to-digital conversion and sequential control circuit form, it is characterized in that, pel array has polytype pixel cell, the pixel cell that has the same type structure with delegation's pixel, be that dissimilar pixel cell only may appear between different row, the polytype dot structure that relates to is in order to obtain different light intensity and the relation curve of output voltage, this slope of a curve is subjected to generation and the floating empty diffusion node electric capacity joint effect of photogenerated charge.
2. transducer as claimed in claim 1, is characterized in that, have the multirow pixel of certain class same type pixel cell, is adjacent arrangement in pel array; The multirow pixel that perhaps has certain class same type pixel cell is had delegation or the arrangement that pixel is separated of multirow another type in pel array.
3. transducer as claimed in claim 2, is characterized in that, pel array has dissimilar pixel cell, shows that the photosensitive area area of pixel is different; Perhaps pel array has different dot structures, shows that the floating empty diffusion node electric capacity of pixel is different; Perhaps pel array has different photosensitive area areas and different floating empty diffusion node electric capacity.
4. transducer as claimed in claim 1, it is characterized in that, pel array is the pel array that adopts 16 row 128 row, pel array is made of the pixel cell of 3 types, and arrange as follows: 1 to 6 row adopts the pixel cell of the 1st type, 7 to 12 row adopt the pixel cell of the 2nd type, and 13 to 16 row adopt the pixel cell of the 3rd type; This pixel cell of 3 types is except having different floating empty diffusion node capacitances, and other structure is identical; The ratio of the floating empty diffusion node electric capacity of above-mentioned 3 types of pixel cells is 1: 4: 16, if the floating empty diffusion node electric capacity that is pel array 1 to 6 row is C, the floating empty diffusion node electric capacity of 7 to 12 row pixels is 4C so, and the floating empty diffusion node electric capacity of 13 to 16 row pixels is 16C.
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| JP2014112760A (en) * | 2012-12-05 | 2014-06-19 | Sony Corp | Solid-state image pickup device and electronic apparatus |
| JP5937767B2 (en) * | 2013-09-27 | 2016-06-22 | 富士フイルム株式会社 | Imaging apparatus and imaging method |
| CN103716558B (en) * | 2013-12-31 | 2018-11-09 | 上海集成电路研发中心有限公司 | High dynamic pel array, pixel unit and imaging sensor |
| CN103685992B (en) * | 2013-12-31 | 2018-10-16 | 上海集成电路研发中心有限公司 | Generate the method and imaging sensor of high dynamic range images |
| CN103686007B (en) * | 2013-12-31 | 2018-11-09 | 上海集成电路研发中心有限公司 | Single shot generates the imaging sensor of high dynamic range images |
| CN105206631A (en) * | 2014-06-23 | 2015-12-30 | 上海箩箕技术有限公司 | Photosensitive pixel array, ambient light sensor and distance sensor |
| CN104580948A (en) * | 2014-12-24 | 2015-04-29 | 天津大学 | Low-noise signal read-out method and device used for low-light-level image sensor |
| TWI704811B (en) * | 2015-07-27 | 2020-09-11 | 日商新力股份有限公司 | Solid-state imaging device, its control method, and electronic equipment |
| CN110971845B (en) * | 2019-12-12 | 2021-06-08 | 中国科学院长春光学精密机械与物理研究所 | Push-broom imaging system with high dynamic range |
| CN114222082A (en) * | 2022-01-27 | 2022-03-22 | 西安理工大学 | High-dynamic CMOS image sensor and working method thereof |
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| US8576292B2 (en) * | 2010-04-30 | 2013-11-05 | Exelis, Inc. | High dynamic range approach for a CMOS imager using a rolling shutter and a gated photocathode |
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