CN105355638B - The screening technique of the surfaces bulk channel CCD saturation charge amplitude size - Google Patents
The screening technique of the surfaces bulk channel CCD saturation charge amplitude size Download PDFInfo
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- CN105355638B CN105355638B CN201510672778.1A CN201510672778A CN105355638B CN 105355638 B CN105355638 B CN 105355638B CN 201510672778 A CN201510672778 A CN 201510672778A CN 105355638 B CN105355638 B CN 105355638B
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- hangover
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- 238000000034 method Methods 0.000 title claims abstract description 16
- 238000012216 screening Methods 0.000 title claims abstract description 14
- 206010019133 Hangover Diseases 0.000 claims abstract description 27
- 230000000694 effects Effects 0.000 abstract description 5
- 238000005259 measurement Methods 0.000 abstract description 5
- 238000002474 experimental method Methods 0.000 abstract 1
- 238000012546 transfer Methods 0.000 description 9
- 238000003384 imaging method Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 230000002708 enhancing effect Effects 0.000 description 3
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 2
- 240000002853 Nelumbo nucifera Species 0.000 description 2
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000010351 charge transfer process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The invention discloses a kind of screening techniques of the surfaces bulk channel CCD saturation charge amplitude size, different CCD devices for the same model that can generate surface saturation effect, the relative size of generated hangover signal length is responded to same signal by comparing it, it may determine that the relative size of its surface saturation charge, response for same signal, the signal that trails is longer, then shows that its surface saturation charge is smaller.The screening technique of the present invention has the characteristics that principle is simple and reliable, efficient, and measurement result can be directly used in the strong light measurement of CCD device and effect experiment.
Description
Technical field
The invention belongs to a kind of device performance test methods, and in particular to a kind of to be tested with smear difference in length
The method of the surfaces CCD saturation charge relative size.
Background technology
Surface saturation refers to the signal charge in mono- pixel of bulk channel CCD, with the increasing of quantity under specific driving
Add, before being overflowed to except the pixel, can first contact the interface of semiconductor layer and insulating layer in CCD.In one pixel, believe
Quantity when number charge exactly in contact with interface, referred to as surface saturation charge.In the strong light imaging applications of CCD, the surfaces CCD are full
There is important reference value for evaluation CCD device imaging dynamic range and the threshold value that strong light irradiation can be born with the quantity of electric charge.
Since the surface saturation of CCD is removed with device self structure phase outside the Pass, also to be influenced by its drive voltage amplitude,
Existing theoretical calculation or the measurement method loaded based on charge, it is difficult to accurately obtain surface saturation charge between different components
Difference, limit CCD strong light imaging in application.
Invention content
The present invention is based on the smearings that signal charge is accumulated on the surfaces bulk channel CCD, propose a kind of surfaces test CCD saturation
The method of quantity of electric charge relative size can measure the relative magnitude of the surface saturation charge of finished product CCD device, be CCD
Screening of the device for strong light imaging applications provides a kind of measurement means easily and effectively.
A kind of screening technique of the surfaces bulk channel CCD saturation charge amplitude size, includes the following steps：
[1] by the modes such as diaphragm limitation or lens convergence, the light irradiation of output will be stablized in CCD device photosurface
Center, wherein the hot spot scale of light source are less than CCD device photosurface scale；
[2] intensity of light source is adjusted so that hot spot hangover occur in CCD exports image, record image；
[3] it keeps the output intensity of light source constant, replaces CCD device, and make light irradiation in the identical position of CCD device
It sets；
[4] the hangover pixel quantity for being included between spot center and streak image tail end in image is read, according to hangover
Pixel quantity is bigger, the smaller principle of the corresponding surfaces CCD saturation charge, and screening obtains required CCD device.
In the screening technique of the surfaces above-mentioned bulk channel CCD saturation charge amplitude size, light source is that light intensity is in Gaussian Profile
Laser.
In the screening technique of the surfaces above-mentioned bulk channel CCD saturation charge amplitude size, the wavelength of laser is visible light.
The present invention has advantageous effect below：
The present invention provides a kind of for same model, the side of different CCD devices surface saturation charge test and screening
Method judges the phase of device surface saturation charge by comparing device to hangover signal length produced by the response of same signal
To size, have the characteristics that principle is simple and reliable, efficient, measurement result can be directly used for the strong light measurement of CCD device and effect
In should testing.
Description of the drawings
Fig. 1 is the weaker laser facula of the intensity of bulk channel CCD camera shooting；
The phenomenon that hangover is presented for Fig. 1 hot spots after laser enhancing in Fig. 2；
Fig. 3 is the phenomenon that laser beam continues Fig. 2 trailing lengths increase after enhancing；
The hangover generation mechanism schematic diagram of Fig. 4 single pixel signals.
Reference numeral：11 be laser facula, and 12 be laser facula trailing length.
Specific implementation mode
The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.
Under specific driving, the signal charge in mono- pixel of bulk channel CCD, with the increase of quantity, to the pixel
Except overflow before, can first contact CCD in semiconductor layer and insulating layer interface.In one pixel, signal charge connects just
Touch quantity when interface, referred to as surface saturation charge；The quantity of signal charge be more than surface saturation charge after, therein one
Part will be deposited in interface, and signal charge is accumulated on referred to as surface.During signal charge shifts, due to interfacial state
Effect, surface accumulation signal charge has the transfer indfficiency rate that can not ignore, to cause the trailing phenomenon of picture element signal.When one
When the quantity of signal charge is less than or equal to surface saturation charge in a pixel, then there is no surface accumulation signal electricity for the pixel
Lotus will not form hangover.
Assuming that only being irradiated there are one pixel in CCD, wherein the integral gained quantity of electric charge is QS, then the picture element signal and
Its trail maximum length be (as unit of pixel number)
nmax=ceil (QS/Qsf)
Wherein ceil () is positive bracket function, QsfFor the surface saturation charge of the CCD.For identical signal electricity
Lotus amount QS, QsfIt is bigger, then nmaxIt is smaller；QsfIt is smaller, then nmaxIt is bigger.
Signal and its trailing length n is set to reach maximum value nmax, need that signal and its hangover is allowed to shift enough in CCD
More number (primary transfer refers to one unit of signal onwards transmission), so that the signal charge quantity in signal and its hangover pixel
QS-anyReduced because of transfer indfficiency to
QS-any≤Qsf
Even if n still not up to maximums, it is with the surfaces CCD saturation charge QsfRelative size relationship also with nmaxUnanimously.
This is because in signal and its transfer transmission process of hangover, the signal charge quantity in the most end end pixel that trails
QS-endMeet
QS-end>Qsf
When, when shifting next time, n can just increase.Therefore QsfSmaller, then the condition more readily satisfies, and n increases faster；Instead
It, n increases slower.Certainly, transfer number is bigger, then n is because of QsfDifference caused by difference is more apparent.
A kind of test of the present invention and the method for comparing the surfaces bulk channel CCD saturation charge relative size, including it is following
Step：
[1] by the modes such as diaphragm limitation or lens convergence, by the signal localization of a stabilized light source in CCD photosurfaces
Portion had not only made signal undergo more transfer number before output, but also made that signal and its overall picture of hangover are presented in the output.
[2], there is hot spot hangover in enabling CCD export in the intensity for adjusting light source, and makes the hangover of hot spot beyond former hot spot
Region preserves the image or waveform.
[3] it keeps intensity and the distribution of light source constant, replaces CCD device, pay attention to that laser is made to irradiate identical position, preserve
Corresponding streak image or waveform.
[4] compare [2], in image or waveform obtained by [3] trailing length relative size, usually with hot spot Radiation Center with
The hangover pixel quantity that is included between streak image tail end indicates that trailing length is longer, and hangover pixel quantity is bigger, and institute is right
The surfaces the CCD saturation charge answered is smaller.
As shown in Figure 1, being irradiated to the surfaces CCD with the visible light lasers of Gaussian Profile, when laser is weaker, hot spot is covered
All pixels in quantity of electric charge when being less than or equal to surface saturation charge, spot signal is not in hangover.Work as laser
When stronger, when the quantity of electric charge in the partial pixel of hot spot covering is higher than surface saturation charge, spot signal will will appear hangover,
As shown in Figure 2.Work as laser enhancing, when the quantity of electric charge in pixel increases, hangover can also increase, as shown in Figure 3.For Gaussian spot
For, the light intensity value of spot center is maximum, therefore the hangover longest of its spot center, therefore entire hangover is in front wide and rear narrow shape
Shape.
In the following, illustrating the forming process of laser facula hangover by a simply example, to further understand root
The principle of the surfaces CCD saturation charge relative size is judged according to the relative size of trailing length.
It is irradiated by laser as shown in figure 4, setting CCD only the 5th pixel and generates quantity of electric charge QS5-0', and have
QS5-0'>Qsf
Then in the 1' times transfer of signal, QS5-0'A part of QS4-1'It is transferred to the 4th pixel, remaining QS5-1'Stay in the 5th
A pixel.Assuming that there is following relationship
QS4-1'>Qsf
QS5-1'<Qsf
Then in the 2' times transfer of signal, QS4-1'A part of QS3-2'It is transferred to the 3rd pixel, remaining QS4-2'-LStay in
4 pixels；Meanwhile QS5-1'It is fully transferred to the 4th pixel；At this point, the total charge dosage in the 4th pixel is
QS4-2'=QS4-2'-L+QS5-1'
Continue to assume there is following relationship
QS4-2'>Qsf
QS3-2'=Qsf
When then being shifted at the 3' times, QS3-2'It is fully transferred to the 2nd pixel, is re-flagged as QS2-3'；QS4-2'A part
QS3-3'It is transferred to the 3rd pixel, remaining QS4-3'Stay in the 4th pixel.Assuming that there is relationship at this time
QS2-3'=Qsf
QS3-3'=Qsf
QS4-3'≤Qsf
Then in subsequent charge transfer process, signal charge no longer generates transfer indfficiency, signal charge in entire CCD
Distribution no longer changes, and signal and its hangover reach maximum length.That is, for identical input signal, the surface of CCD is full
With quantity of electric charge QsfSmaller, then signal and its length of hangover are bigger.
Claims (3)
1. a kind of screening technique of the surfaces bulk channel CCD saturation charge amplitude size, which is characterized in that include the following steps：
[1] by the modes such as diaphragm limitation or lens convergence, the light irradiation of output will be stablized at the center of CCD device photosurface
Position, wherein the hot spot scale of light source are less than CCD device photosurface scale；
[2] intensity of light source is adjusted so that hot spot hangover occur in CCD exports image, record image；
[3] it keeps the output intensity of light source constant, replaces CCD device, and make light irradiation in the identical position of CCD device；
[4] the hangover pixel quantity for being included between spot center and streak image tail end in image is read, is screened according to formula
CCD device, wherein for positive bracket function, for the surface saturation charge of the CCD, for the integral gained quantity of electric charge；For identical
Signal charge quantity, hangover pixel quantity it is bigger, the corresponding surfaces CCD saturation charge is smaller, screening obtain it is required
CCD device.
2. the screening technique of the surfaces bulk channel CCD according to claim 1 saturation charge amplitude size, feature exist
In：The light source is the laser that light intensity is in Gaussian Profile.
3. the screening technique of the surfaces bulk channel CCD according to claim 2 saturation charge amplitude size, feature exist
In：The wavelength of the laser is visible light.
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| CN107197236B (en) * | 2017-06-28 | 2018-08-14 | 中国科学院新疆理化技术研究所 | A kind of charge coupling device charge transfer effciency Orbital detection method based on hot pixels |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP5222000B2 (en) * | 2007-03-30 | 2013-06-26 | パナソニック株式会社 | Image sensor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP5222000B2 (en) * | 2007-03-30 | 2013-06-26 | パナソニック株式会社 | Image sensor |
Non-Patent Citations (1)
| Title |
|---|
| 《行间转移型CCD激光干扰效应阂值估算方法》;张检民;《光学学报》;20150331;第35卷(第3期);第2-5页 * |
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