CN105351128A - Boost type jet drive circuit of high-speed electromagnetic valve - Google Patents
Boost type jet drive circuit of high-speed electromagnetic valve Download PDFInfo
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- CN105351128A CN105351128A CN201510924629.XA CN201510924629A CN105351128A CN 105351128 A CN105351128 A CN 105351128A CN 201510924629 A CN201510924629 A CN 201510924629A CN 105351128 A CN105351128 A CN 105351128A
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F02—COMBUSTION ENGINES; HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
- F02M—SUPPLYING COMBUSTION ENGINES IN GENERAL WITH COMBUSTIBLE MIXTURES OR CONSTITUENTS THEREOF
- F02M51/00—Fuel-injection apparatus characterised by being operated electrically
- F02M51/005—Arrangement of electrical wires and connections, e.g. wire harness, sockets, plugs; Arrangement of electronic control circuits in or on fuel injection apparatus
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F02—COMBUSTION ENGINES; HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
- F02D—CONTROLLING COMBUSTION ENGINES
- F02D41/00—Electrical control of supply of combustible mixture or its constituents
- F02D41/30—Controlling fuel injection
- F02D41/38—Controlling fuel injection of the high pressure type
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Combustion & Propulsion (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Magnetically Actuated Valves (AREA)
Abstract
The invention provides a boost type jet drive circuit of a high-speed electromagnetic valve. The boost type jet drive circuit comprises an electromagnetic valve drive main body circuit, a high-voltage signal sampling circuit, and a drive current signal sampling circuit, wherein the high-voltage signal sampling circuit is used for collecting a high-voltage signal and feeding the high-voltage signal back to an electromagnetic valve jet drive control unit; the drive current signal sampling circuit is used for collecting an electromagnetic valve current signal and feeding the electromagnetic valve current signal back to electromagnetic valve jet drive control unit; the electromagnetic valve drive main body circuit is a high-low position MOS pipe drive circuit structure, receives an MOS pipe control signal sent out by the electromagnetic valve jet drive control unit, and drives the high-speed electromagnetic valve to complete the jet operation. The boost type jet drive circuit has the following advantages: electromagnetic valve drive current is directly collected through a middle common line, is high in accuracy, flexible to control, and free from limitation of on-off of upper and lower MOS pipes; an additional boosted circuit is not required, a high-voltage energy-storage capacitor is connected with the electromagnetic valve, the electrical inductance characteristic of the electromagnetic valve can be utilized to charge the high-voltage energy-storage capacitor so as to boost during the jet process.
Description
Technical field
The invention belongs to electromagnetic injection valve actuation techniques field, be specially a kind of jet drive circuit with the high-speed electromagnetic valve of boost function.
Background technique
Along with improving constantly of electronic Control for Diesel Engine technology, ejecting system progressively develops into present electronically controlled unit pump ejecting system and common-rail injection system by traditional mechanical pump ejecting system, high-speed electromagnetic valve drives as one of its key technology, have also been obtained swift and violent development.Using solenoid valve as in the Electronic Control for Fuel Injection System of Diesel Engine of power unit, the performance of driving to whole ejecting system of solenoid valve plays conclusive effect.
In current technology, the driving of general high-speed electromagnetic valve all adopts double-power source to drive, namely solenoid valve starts fast and cuts out under high-voltage power effect, under low tension power supply, by PWM, the electric current on solenoid valve is maintained between the maintenance electric current of firing current and course of injection, reach the object accelerated switching response speed and reduce system power dissipation.But the low tension power supply in drive circuit is vehicle power, high-voltage power is boosted by vehicle power and is obtained, and needs independent DC/DC conversion circuit, realizing circuit more complicated.
Summary of the invention
In view of this, the present invention is intended to propose a kind of jet drive circuit with the high-speed electromagnetic valve of boost function, and circuit can complete boosting in injection period, if injection period voltage does not reach setting value, also can spray gap at twice and proceed boosting, not need extra booster circuit.
For reaching this object, improve drive circuit, adopt the sampling resistor on common wire to gather electromagnetic valve current signal, current acquisition is not by the restriction of upper and lower switching tube break-make, and devising special current sample feeder loop, concrete technological scheme is achieved in that
There is a jet drive circuit for the high-speed electromagnetic valve of boost function, comprise solenoid-driven main body circuit, high-voltage signal sample circuit and driving current signal sample circuit,
Described high-voltage signal sample circuit is used for gathering the high-voltage signal 11 of solenoid-driven main body circuit, and feeds back to electromagnetic injection valve driving control unit;
Described driving current signal sample circuit is used for gathering the electromagnetic valve current signal 15,16 of solenoid-driven main body circuit, and feeds back to electromagnetic injection valve driving control unit;
Described solenoid-driven main body circuit is high-low-position metal-oxide-semiconductor driving circuit structure, receive the metal-oxide-semiconductor control signal that electromagnetic injection valve driving control unit sends, high-speed electromagnetic valve is driven to complete injection action, and by the high-voltage signal of collection with by driving current signal sample circuit, the electromagnetic valve current signal 15,16 of collection is fed back to electromagnetic injection valve driving control unit by high-voltage signal sample circuit, form closed loop control.
Further, described solenoid-driven main body circuit 1 comprises: metal-oxide-semiconductor Q1, Q2, Q3, Q4, high-voltage energy storage capacitor E1, isolating diode D1, D2, sustained diode 3, D4, D5, and driven object is solenoid valve 1 and solenoid valve 2, and concrete Placement is:
The source electrode of high-order metal-oxide-semiconductor Q1 is connected with the positive pole of high-voltage signal 11, high pressure VH, high-voltage energy storage capacitor E1, the negative pole of isolating diode D1, the negative pole of sustained diode 4, D5 simultaneously; The grid of high-order metal-oxide-semiconductor Q1 receives the control signal 13 from electromagnetic injection valve driving control unit 4; The drain electrode of high-order metal-oxide-semiconductor Q1 is connected with the negative pole of sustained diode 3 with one end of electromagnetic valve current signal 15, sampling resistor R1, the negative pole of isolating diode D2 simultaneously, and the positive pole of sustained diode 3 is connected with GND;
The source electrode of high-order metal-oxide-semiconductor Q2 is connected with the positive pole of low pressure VL, isolating diode D1, and the grid of high-order metal-oxide-semiconductor Q2 receives the control signal 14 from electromagnetic injection valve driving control unit 4, and the drain electrode of high-order metal-oxide-semiconductor Q2 is connected with the positive pole of isolating diode D2; One end of the other end of sampling resistor R1 and electromagnetic valve current signal 16, solenoid valve 1,2 is connected; The other end of solenoid valve 1 is connected with the source electrode of the positive pole of sustained diode 4, low level metal-oxide-semiconductor Q3, and the grid of low level metal-oxide-semiconductor Q3 receives the control signal 19 from electromagnetic injection valve driving control unit 4; The other end of solenoid valve 2 is connected with the source electrode of the positive pole of sustained diode 5, low level metal-oxide-semiconductor Q4; The grid of low level metal-oxide-semiconductor Q4 receives the control signal 20 from electromagnetic injection valve driving control unit 4; The drain electrode of low level metal-oxide-semiconductor Q4 is connected with GND with the drain electrode of low level metal-oxide-semiconductor Q3.
Further, described high-voltage signal sample circuit comprises divider resistance R1, R2, difference amplifier U1, comparator U2; Concrete Placement is:
One end of divider resistance R2 is connected with high-voltage signal 11, and the other end of divider resistance R2 is connected with the positive input of one end of divider resistance R3, difference amplifier U1, and the other end of divider resistance R3 is connected with GND with the reverse input end of difference amplifier U1; The output terminal of difference amplifier U1 is connected with the positive input of comparator U2, the reverse input end of comparator U2 is connected with reference voltage VR1, the output terminal output voltage feedback signal 12 of comparator U2, this signal exports high level when high-voltage signal 11 reaches reference voltage VR1 setting value.
Further, described driving current signal sample circuit comprises resistance R4, R5, R6, R7, R8, common differential amplifier U3, comparator U4, U5; The positive input of common differential amplifier U3 is connected with electromagnetic valve current signal 15, the reverse input end of common differential amplifier U3 is connected with electromagnetic valve current signal 16, the output terminal of common differential amplifier U3 is connected with the reverse input end of comparator U4, U5 by resistance R4, the positive input of comparator U4 is connected with one end of one end of resistance R5, resistance R6, and the other end of resistance R5 connects reference voltage VRH; The output terminal of comparator U4 and the other end of resistance R6, output signal 17 and be connected; The positive input of comparator U5 is connected with one end of one end of resistance R7, resistance R8, and the other end of resistance R7 connects reference voltage VRL, the output terminal of comparator U5 and the other end of resistance R8, outputs signal 18 and is connected.
Relative to prior art, the present invention has following advantage:
(1) electromagnetic valve driving current is directly gathered by middle common wire, and precision is high, control flexibly, not by the restriction of upper and lower metal-oxide-semiconductor break-make, enormously simplify circuit;
(2) extra booster circuit is not needed, high-voltage energy storage capacitor is connected with solenoid valve, the inductance characteristic of solenoid valve itself can be utilized for high-voltage capacitor charging, boost in course of injection simultaneously, also can supplement boosting at injection interval, circuit structure simply easily realizes.
Accompanying drawing explanation
The accompanying drawing forming a part of the present invention is used to provide a further understanding of the present invention, and schematic description and description of the present invention, for explaining the present invention, does not form inappropriate limitation of the present invention.In the accompanying drawings:
Fig. 1 is the jet drive circuit general principles schematic diagram with the high-speed electromagnetic valve of boost function described in the embodiment of the present invention;
Fig. 2 is the solenoid-driven main body circuit principle schematic described in the embodiment of the present invention;
Fig. 3 is the high-voltage signal sample circuit principle schematic described in the embodiment of the present invention;
Fig. 4 is the driving current signal sample circuit principle schematic described in the embodiment of the present invention;
Fig. 5 is the driving current described in the embodiment of the present invention and boosting waveform schematic diagram.
Description of reference numerals:
1-solenoid-driven main body circuit, 2-high-voltage signal sample circuit, 3-driving current signal sample circuit, 4-electromagnetic injection valve driving control unit.
Embodiment
It should be noted that, when not conflicting, the embodiment in the present invention and the feature in embodiment can combine mutually.
Below with reference to the accompanying drawings and describe the present invention in detail in conjunction with the embodiments.
A kind of jet drive circuit with the high-speed electromagnetic valve of boost function, as shown in Figure 1, solenoid-driven main body circuit 1, high-voltage signal sample circuit 2 and driving current signal sample circuit 3, described high-voltage signal sample circuit 2 is used for gathering the high-voltage signal 11 of solenoid-driven main body circuit 1, and feeds back to electromagnetic injection valve driving control unit 4; Described driving current signal sample circuit 3 is used for gathering the electromagnetic valve current signal 15,16 of solenoid-driven main body circuit 1, and feeds back to electromagnetic injection valve driving control unit 4; Described solenoid-driven main body circuit 1 is high-low-position metal-oxide-semiconductor driving circuit structure, receive the metal-oxide-semiconductor control signal that electromagnetic injection valve driving control unit 4 sends, high-speed electromagnetic valve is driven to complete injection action, and by the high-voltage signal of collection with by driving current signal sample circuit 3, the electromagnetic valve current signal 15,16 of collection is fed back to electromagnetic injection valve driving control unit 4 by high-voltage signal sample circuit 2, form closed loop control.
As shown in Figure 2, the circuit structure that drives for high-low-position metal-oxide-semiconductor of solenoid-driven main body circuit 1 of the present invention.Comprise: metal-oxide-semiconductor Q1, Q2, Q3, Q4, high-voltage energy storage capacitor E1, isolating diode D1, D2, sustained diode 3, D4, D5, driven object is solenoid valve 1 and solenoid valve 2, can connect multipath electrovalve in actual applications.Concrete Placement is:
The source electrode of high-order metal-oxide-semiconductor Q1 is connected with the positive pole of high-voltage signal 11, high pressure VH, high-voltage energy storage capacitor E1, the negative pole of isolating diode D1, the negative pole of sustained diode 4, D5 simultaneously; The grid of high-order metal-oxide-semiconductor Q1 receives the control signal 13 from electromagnetic injection valve driving control unit 4; The drain electrode of high-order metal-oxide-semiconductor Q1 is connected with the negative pole of sustained diode 3 with one end of electromagnetic valve current signal 15, sampling resistor R1, the negative pole of isolating diode D2 simultaneously, and the positive pole of sustained diode 3 is connected with GND;
The source electrode of high-order metal-oxide-semiconductor Q2 is connected with the positive pole of low pressure VL, isolating diode D1, and the grid of high-order metal-oxide-semiconductor Q2 receives the control signal 14 from electromagnetic injection valve driving control unit 4, and the drain electrode of high-order metal-oxide-semiconductor Q2 is connected with the positive pole of isolating diode D2; One end of the other end of sampling resistor R1 and electromagnetic valve current signal 16, solenoid valve 1,2 is connected (circuit can connect multipath electrovalve); The other end of solenoid valve 1 is connected with the source electrode of the positive pole of sustained diode 4, low level metal-oxide-semiconductor Q3, and the grid of low level metal-oxide-semiconductor Q3 receives the control signal 19 from electromagnetic injection valve driving control unit 4; The other end of solenoid valve 2 is connected with the source electrode of the positive pole of sustained diode 5, low level metal-oxide-semiconductor Q4; The grid of low level metal-oxide-semiconductor Q4 receives the control signal 20 from electromagnetic injection valve driving control unit 4; The drain electrode of low level metal-oxide-semiconductor Q4 is connected with GND with the drain electrode of low level metal-oxide-semiconductor Q3.
As shown in Figure 3, the high-voltage signal sample circuit (2) of the embodiment of the present invention is discharge circuit structure, comprises divider resistance R1, R2, difference amplifier U1, comparator U2.Concrete Placement is:
One end of divider resistance R2 is connected with high-voltage signal 11, and the other end of divider resistance R2 is connected with the positive input of one end of divider resistance R3, difference amplifier U1, and the other end of divider resistance R3 is connected with GND with the reverse input end of difference amplifier U1; The output terminal of difference amplifier U1 is connected with the positive input of comparator U2, the reverse input end of comparator U2 is connected with reference voltage VR1, the output terminal output voltage feedback signal 12 of comparator U2, this signal exports high level when high-voltage signal 11 reaches reference voltage VR1 setting value.
As shown in Figure 4, the driving current signal sample circuit (3) of the embodiment of the present invention comprises: resistance R4, R5, R6, R7, R8, common differential amplifier U3, comparator U4, U5; The electromagnetic valve current signal 15,16 of input is amplified by common differential amplifier U3, then exports two-way feedback signal by two comparator U4, U5; Output signal 17 becomes low level after driving current reaches VRH setting value, and output signal 18 becomes low level after driving current reaches VRL setting value.Concrete Placement is:
The positive input of common differential amplifier U3 is connected with electromagnetic valve current signal 15, the reverse input end of common differential amplifier U3 is connected with electromagnetic valve current signal 16, the output terminal of common differential amplifier U3 is connected with the reverse input end of comparator U4, U5 by resistance R4, the positive input of comparator U4 is connected with one end of one end of resistance R5, resistance R6, and the other end of resistance R5 connects reference voltage VRH; The output terminal of comparator U4 and the other end of resistance R6, output signal 17 and be connected; The positive input of comparator U5 is connected with one end of one end of resistance R7, resistance R8, and the other end of resistance R7 connects reference voltage VRL, the output terminal of comparator U5 and the other end of resistance R8, outputs signal 18 and is connected.
The working principle that the present invention has the jet drive circuit of the high-speed electromagnetic valve of boost function is:
Solenoid-driven main body circuit (1) receives the metal-oxide-semiconductor control signal that electromagnetic injection valve driving control unit (4) sends, and controls the break-make of metal-oxide-semiconductor, drives electromagnetic valve work, enables solenoid valve form two stage Heising modulation waveform.Sampling resistor R1 can gather electromagnetic valve current signal and form feedback signal by the process of driving current signal sample circuit (3), high-voltage signal sample circuit (2) can gather the voltage signal of high-voltage energy storage capacitor E1, coating-forming voltage feedback signal after process.Feedback signal turns back in electromagnetic injection valve driving control unit (4) and forms closed loop control.As shown in Figure 1, for solenoid valve 1 working principle:
(1) after injection beginning, first metal-oxide-semiconductor Q1, Q3 conducting, the loop that electric current consists of high-voltage energy storage capacitor E1, metal-oxide-semiconductor Q1, sampling resistor R1, solenoid valve 1, metal-oxide-semiconductor Q3, the electric current now on solenoid valve 1 rises, and utilizes the inductance characteristic energy storage of solenoid valve itself.
(2) after electric current rises to firing current setting value, (this current value is set by the reference voltage VRH in driving current signal sample circuit 3) turns off metal-oxide-semiconductor Q1, Q3, now electric current is by the loop of sustained diode 3, sampling resistor R1, solenoid valve 1, sustained diode 4, high-voltage energy storage capacitor E1 composition, reclaim the energy of high-voltage energy storage capacitor E1, electric current starts to decline.
(3) when electric current decrease by the return difference scope of the reference voltage VRH in driving current signal sample circuit 3 outer after, conducting metal-oxide-semiconductor Q2, Q3, the loop that electric current consists of VL power supply, metal-oxide-semiconductor Q2, sampling resistor R1, solenoid valve 1, metal-oxide-semiconductor Q3, the electric current on solenoid valve 1 rises; Electric current turns off metal-oxide-semiconductor Q2, Q3 after rising to firing current setting value.Electric current is the charging of high-voltage energy storage capacitor E1 by the loop that sustained diode 3, sampling resistor R1, solenoid valve 1, sustained diode 4, high-voltage energy storage capacitor E1 form again.So repeatedly, the object of boosting is reached.
(4) after the voltage of high-voltage energy storage capacitor E1 reaches boosting setting value (this magnitude of voltage is set by the reference voltage VR1 in high-voltage signal sample circuit 2), drive circuit can stop boosting, method is for will turn off metal-oxide-semiconductor Q2, Q3 in the 3rd step, change into and only turn off metal-oxide-semiconductor Q2, now electric current is by the loop of sustained diode 3, sampling resistor R1, solenoid valve 1, metal-oxide-semiconductor Q3 composition, now no longer carries out the charging to high-voltage energy storage capacitor E1.Can prevent excessive boost from causing damage to circuit.Driving current and boosting schematic diagram are as shown in Figure 5.
(5) if injection period cannot make the voltage of high-voltage energy storage capacitor E1 reach setting voltage value, boosting can still be continued in injection gap.Because the electric current of solenoid valve is only reaching firing current and just can open after keeping a period of time, therefore metal-oxide-semiconductor Q2 and all low level metal-oxide-semiconductor Q3, Q4 turn-on and turn-off simultaneously can still be made in injection gap, make each branch road electromagnetic valve current lower than maintenance electric current, so repeatedly, proceed boosting.After the voltage of high-voltage energy storage capacitor E1 reaches boosting setting value, close whole metal-oxide-semiconductor, stop boosting.Also can omit driving this step in the not high system of high pressure requirement.
The present invention does not need extra DC-DC boost module, uses solenoid valve itself as boost power inductance, boosts while injection, simplify the complexity of circuit.Circuit responce can meet rapidly the jet drive requirement of various different model solenoid valve.
Embodiments of the invention circuit operation result shows that this circuit can drive electromagnetic valve work and complete boost function, result high efficient and reliable, and enormously simplify circuit, decreases the cost of design.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (4)
1. there is a jet drive circuit for the high-speed electromagnetic valve of boost function, it is characterized in that comprising solenoid-driven main body circuit (1), high-voltage signal sample circuit (2) and driving current signal sample circuit (3),
Described high-voltage signal sample circuit (2) is used for gathering the high-voltage signal 11 of solenoid-driven main body circuit (1), and feeds back to electromagnetic injection valve driving control unit (4);
Described driving current signal sample circuit (3) is used for gathering the electromagnetic valve current signal 15,16 of solenoid-driven main body circuit (1), and feeds back to electromagnetic injection valve driving control unit (4);
Described solenoid-driven main body circuit (1) is high-low-position metal-oxide-semiconductor driving circuit structure, receive the metal-oxide-semiconductor control signal that electromagnetic injection valve driving control unit (4) sends, high-speed electromagnetic valve is driven to complete injection action, and by the high-voltage signal gathered with by driving current signal sample circuit (3), the electromagnetic valve current signal 15,16 of collection is fed back to electromagnetic injection valve driving control unit (4) by high-voltage signal sample circuit (2), form closed loop control.
2. the jet drive circuit with the high-speed electromagnetic valve of boost function according to claim 1, it is characterized in that: described solenoid-driven main body circuit 1 comprises: metal-oxide-semiconductor Q1, Q2, Q3, Q4, high-voltage energy storage capacitor E1, isolating diode D1, D2, sustained diode 3, D4, D5, driven object is solenoid valve 1 and solenoid valve 2, and concrete Placement is:
The source electrode of high-order metal-oxide-semiconductor Q1 is connected with the positive pole of high-voltage signal 11, high pressure VH, high-voltage energy storage capacitor E1, the negative pole of isolating diode D1, the negative pole of sustained diode 4, D5 simultaneously; The grid of high-order metal-oxide-semiconductor Q1 receives the control signal 13 from electromagnetic injection valve driving control unit 4; The drain electrode of high-order metal-oxide-semiconductor Q1 is connected with the negative pole of sustained diode 3 with one end of electromagnetic valve current signal 15, sampling resistor R1, the negative pole of isolating diode D2 simultaneously, and the positive pole of sustained diode 3 is connected with GND;
The source electrode of high-order metal-oxide-semiconductor Q2 is connected with the positive pole of low pressure VL, isolating diode D1, and the grid of high-order metal-oxide-semiconductor Q2 receives the control signal 14 from electromagnetic injection valve driving control unit 4, and the drain electrode of high-order metal-oxide-semiconductor Q2 is connected with the positive pole of isolating diode D2; One end of the other end of sampling resistor R1 and electromagnetic valve current signal 16, solenoid valve 1,2 is connected; The other end of solenoid valve 1 is connected with the source electrode of the positive pole of sustained diode 4, low level metal-oxide-semiconductor Q3, and the grid of low level metal-oxide-semiconductor Q3 receives the control signal 19 from electromagnetic injection valve driving control unit 4; The other end of solenoid valve 2 is connected with the source electrode of the positive pole of sustained diode 5, low level metal-oxide-semiconductor Q4; The grid of low level metal-oxide-semiconductor Q4 receives the control signal 20 from electromagnetic injection valve driving control unit 4; The drain electrode of low level metal-oxide-semiconductor Q4 is connected with GND with the drain electrode of low level metal-oxide-semiconductor Q3.
3. the jet drive circuit with the high-speed electromagnetic valve of boost function according to claim 1, is characterized in that: described high-voltage signal sample circuit (2) comprises divider resistance R1, R2, difference amplifier U1, comparator U2; Concrete Placement is:
One end of divider resistance R2 is connected with high-voltage signal 11, and the other end of divider resistance R2 is connected with the positive input of one end of divider resistance R3, difference amplifier U1, and the other end of divider resistance R3 is connected with GND with the reverse input end of difference amplifier U1; The output terminal of difference amplifier U1 is connected with the positive input of comparator U2, the reverse input end of comparator U2 is connected with reference voltage VR1, the output terminal output voltage feedback signal 12 of comparator U2, this signal exports high level when high-voltage signal 11 reaches reference voltage VR1 setting value.
4. the jet drive circuit with the high-speed electromagnetic valve of boost function according to claim 1, it is characterized in that: described driving current signal sample circuit (3) comprises resistance R4, R5, R6, R7, R8, common differential amplifier U3, comparator U4, U5; The positive input of common differential amplifier U3 is connected with electromagnetic valve current signal 15, the reverse input end of common differential amplifier U3 is connected with electromagnetic valve current signal 16, the output terminal of common differential amplifier U3 is connected with the reverse input end of comparator U4, U5 by resistance R4, the positive input of comparator U4 is connected with one end of one end of resistance R5, resistance R6, and the other end of resistance R5 connects reference voltage VRH; The output terminal of comparator U4 and the other end of resistance R6, output signal 17 and be connected; The positive input of comparator U5 is connected with one end of one end of resistance R7, resistance R8, and the other end of resistance R7 connects reference voltage VRL, the output terminal of comparator U5 and the other end of resistance R8, outputs signal 18 and is connected.
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107479430A (en) * | 2016-11-21 | 2017-12-15 | 北京驰亿隆科技有限公司 | A kind of gearbox driving circuit for electromagnetic valve and its control method |
CN108110729A (en) * | 2017-12-19 | 2018-06-01 | 浙江劳士顿焊接设备有限公司 | A kind of high-low pressure for electric welding machine protects detection circuit |
CN113848858A (en) * | 2021-09-29 | 2021-12-28 | 广西玉柴机器股份有限公司 | High-precision low-delay MEUN valve current acquisition method |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN202165166U (en) * | 2010-12-07 | 2012-03-14 | 中国第一汽车集团公司无锡油泵油嘴研究所 | Driving circuit of electromagnetic valve of oil spraying system of diesel engine |
CN102933824A (en) * | 2010-05-27 | 2013-02-13 | 日立汽车系统株式会社 | Fuel injection device for internal combustion engine and control method |
JP2014105685A (en) * | 2012-11-29 | 2014-06-09 | Hitachi Automotive Systems Ltd | Electromagnetic load control device |
CN104564461A (en) * | 2013-10-10 | 2015-04-29 | 常远 | Oil injector electromagnetic valve driving circuit controlled by current feedback |
JP2015094400A (en) * | 2013-11-11 | 2015-05-18 | 株式会社デンソー | Electromagnetic valve drive unit |
CN105143742A (en) * | 2013-04-26 | 2015-12-09 | 日立汽车系统株式会社 | Electromagnetic valve control unit and internal combustion engine control device using same |
-
2015
- 2015-12-11 CN CN201510924629.XA patent/CN105351128B/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102933824A (en) * | 2010-05-27 | 2013-02-13 | 日立汽车系统株式会社 | Fuel injection device for internal combustion engine and control method |
CN202165166U (en) * | 2010-12-07 | 2012-03-14 | 中国第一汽车集团公司无锡油泵油嘴研究所 | Driving circuit of electromagnetic valve of oil spraying system of diesel engine |
JP2014105685A (en) * | 2012-11-29 | 2014-06-09 | Hitachi Automotive Systems Ltd | Electromagnetic load control device |
CN105143742A (en) * | 2013-04-26 | 2015-12-09 | 日立汽车系统株式会社 | Electromagnetic valve control unit and internal combustion engine control device using same |
CN104564461A (en) * | 2013-10-10 | 2015-04-29 | 常远 | Oil injector electromagnetic valve driving circuit controlled by current feedback |
JP2015094400A (en) * | 2013-11-11 | 2015-05-18 | 株式会社デンソー | Electromagnetic valve drive unit |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107479430A (en) * | 2016-11-21 | 2017-12-15 | 北京驰亿隆科技有限公司 | A kind of gearbox driving circuit for electromagnetic valve and its control method |
CN107479430B (en) * | 2016-11-21 | 2020-07-28 | 北京驰亿隆科技有限公司 | Gearbox electromagnetic valve driving circuit and control method thereof |
CN108110729A (en) * | 2017-12-19 | 2018-06-01 | 浙江劳士顿焊接设备有限公司 | A kind of high-low pressure for electric welding machine protects detection circuit |
CN113848858A (en) * | 2021-09-29 | 2021-12-28 | 广西玉柴机器股份有限公司 | High-precision low-delay MEUN valve current acquisition method |
CN113908668A (en) * | 2021-11-12 | 2022-01-11 | 河北林格环保科技有限公司 | Intelligent control system for flue gas denitration of annealing furnace |
CN114609900A (en) * | 2022-04-15 | 2022-06-10 | 中国兵器装备集团自动化研究所有限公司 | Electromagnetic valve driving method and driving system based on PID control |
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