CN105351128B - A kind of jet drive circuit of the high-speed electromagnetic valve with boost function - Google Patents
A kind of jet drive circuit of the high-speed electromagnetic valve with boost function Download PDFInfo
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- CN105351128B CN105351128B CN201510924629.XA CN201510924629A CN105351128B CN 105351128 B CN105351128 B CN 105351128B CN 201510924629 A CN201510924629 A CN 201510924629A CN 105351128 B CN105351128 B CN 105351128B
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Classifications
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F02—COMBUSTION ENGINES; HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
- F02M—SUPPLYING COMBUSTION ENGINES IN GENERAL WITH COMBUSTIBLE MIXTURES OR CONSTITUENTS THEREOF
- F02M51/00—Fuel-injection apparatus characterised by being operated electrically
- F02M51/005—Arrangement of electrical wires and connections, e.g. wire harness, sockets, plugs; Arrangement of electronic control circuits in or on fuel injection apparatus
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F02—COMBUSTION ENGINES; HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
- F02D—CONTROLLING COMBUSTION ENGINES
- F02D41/00—Electrical control of supply of combustible mixture or its constituents
- F02D41/30—Controlling fuel injection
- F02D41/38—Controlling fuel injection of the high pressure type
Abstract
The invention provides a kind of jet drive circuit of the high-speed electromagnetic valve with boost function, including solenoid-driven main body circuit, high-voltage signal sample circuit and driving current signal sample circuit, high-voltage signal sample circuit is used for gathering high-voltage signal and feeds back to electromagnetic injection valve drive control unit；Driving current signal sample circuit is used for gathering electromagnetic valve current signal and feeds back to electromagnetic injection valve drive control unit；Solenoid-driven main body circuit is high-low-position metal-oxide-semiconductor driving circuit structure, receives the metal-oxide-semiconductor control signal that electromagnetic injection valve drive control unit is sent, and driving high-speed electromagnetic valve completes injection action.The present invention has the advantage that：Electromagnetic valve driving current is directly gathered by middle common wire, and precision is high, control flexibly, is not limited by metal-oxide-semiconductor break-make up and down；Extra booster circuit is not needed, high-voltage energy storage capacitor is connected with magnetic valve, be high-voltage capacitor charging using the inductance characteristic of magnetic valve in itself, boosted simultaneously in course of injection.
Description
Technical field
The invention belongs to electromagnetic injection valve actuation techniques field, specially a kind of high-speed electromagnetic valve with boost function
Jet drive circuit.
Background technology
With the continuous improvement of electronic Control for Diesel Engine technology, spraying system is progressively sprayed by traditional mechanical pump is
System electronically controlled unit pump spraying system and common-rail injection system till now, high-speed electromagnetic valve driving as its key technology it
One, also obtain swift and violent development.In using magnetic valve as the Electronic Control for Fuel Injection System of Diesel Engine of execution unit, magnetic valve
Driving conclusive effect is played to the performance of whole spraying system.
In current technology, the driving of general high-speed electromagnetic valve is driven using dual power supply, i.e., magnetic valve is in high voltage power supply
Effect is lower quick to be started with closing, made under low-tension supply by PWM the electric current on magnetic valve maintain firing current and
Between the maintenance electric current of course of injection, the purpose for accelerating switch response speed and reduction system power dissipation is reached.But, drive circuit
In low-tension supply be vehicle power, high voltage power supply is obtained by vehicle power boosting, it is necessary to which single DC/DC translation circuits, real
Existing circuit is more complicated.
The content of the invention
In view of this, the present invention is directed to propose a kind of jet drive circuit of the high-speed electromagnetic valve with boost function, electricity
Road can complete to boost in injection period, if injection period voltage is not up to setting value, can also continue in injection gap twice
Boosted, be not required to extra booster circuit.
To reach this purpose, drive circuit is improved, electromagnetic valve current is gathered using the sampling resistor on common wire
Signal, current acquisition is not limited by switching tube break-make up and down, and devises special current sample feedback circuit, specific skill
Art scheme is realized in：
A kind of jet drive circuit of the high-speed electromagnetic valve with boost function, including solenoid-driven main body circuit, height
Signal sample circuit and driving current signal sample circuit are pressed,
The high-voltage signal sample circuit is used for gathering the high-voltage signal 11 of solenoid-driven main body circuit, and feeds back to electricity
Magnet valve jet drive control unit；
The driving current signal sample circuit is used for gathering the first electromagnetic valve current letter of solenoid-driven main body circuit
Number the 15, second electromagnetic valve current signal 16, and feed back to electromagnetic injection valve drive control unit；
The solenoid-driven main body circuit is high-low-position metal-oxide-semiconductor driving circuit structure, receives electromagnetic injection valve driving control
The metal-oxide-semiconductor control signal that unit processed is sent, driving high-speed electromagnetic valve completes injection action, and will by high-voltage signal sample circuit
The high-voltage signal of collection and by driving current signal sample circuit by the first electromagnetic valve current signal 15, the second electromagnetism of collection
Valve current signal 16 feeds back to electromagnetic injection valve drive control unit, forms closed-loop control.
Further, the solenoid-driven main body circuit 1 includes：Metal-oxide-semiconductor Q1, Q2, Q3, Q4, high-voltage energy storage capacitor E1,
Isolating diode D1, D2, sustained diode 3, D4, D5, driven object are the first magnetic valve and the second magnetic valve, are specifically connected
The mode of connecing is：
High-order metal-oxide-semiconductor Q1 source electrode simultaneously with high-voltage signal 11, high pressure VH, high-voltage energy storage capacitor E1 positive pole, isolate two
Pole pipe D1 negative pole, sustained diode 4, D5 negative pole are connected；High-order metal-oxide-semiconductor Q1 grid is received to be driven from electromagnetic injection valve
First control signal 13 of dynamic control unit 4；High-order metal-oxide-semiconductor Q1 drain electrode simultaneously with electromagnetic valve current signal 15, sampling resistor
R1 one end, isolating diode D2 negative pole are connected with the negative pole of sustained diode 3, positive pole and the GND phases of sustained diode 3
Even；
High-order metal-oxide-semiconductor Q2 source electrode is connected with low pressure VL, isolating diode D1 positive pole, and high-order metal-oxide-semiconductor Q2 grid connects
Receive the second control signal 14 from electromagnetic injection valve drive control unit 4, high-order metal-oxide-semiconductor Q2 drain electrode and isolating diode D2
Positive pole be connected；The sampling resistor R1 other end and electromagnetic valve current signal 16, first the first magnetic valve of magnetic valve and the second electricity
One end of magnet valve is connected；The other end of first magnetic valve is connected with the positive pole of sustained diode 4, low level metal-oxide-semiconductor Q3 source electrode,
Low level metal-oxide-semiconductor Q3 grid receives the 3rd control signal 19 from electromagnetic injection valve drive control unit 4；Second magnetic valve
The other end is connected with the positive pole of sustained diode 5, low level metal-oxide-semiconductor Q4 source electrode；Low level metal-oxide-semiconductor Q4 grid is received from electricity
4th control signal 20 of magnet valve jet drive control unit 4；Low level metal-oxide-semiconductor Q4 drain electrode and low level metal-oxide-semiconductor Q3 drain electrode and
GND is connected.
Further, the high-voltage signal sample circuit includes divider resistance R3, R2, difference amplifier U1, comparator U2；
Specifically connected mode is：
Divider resistance R2 one end is connected with high-voltage signal 11, the divider resistance R2 other end and the one of divider resistance R3
End, difference amplifier U1 positive input are connected, the divider resistance R3 other end and difference amplifier U1 reverse input end
It is connected with GND；Difference amplifier U1 output end is connected with comparator U2 positive input, comparator U2 reverse input end
It is connected with reference voltage VR1, comparator U2 output end output voltage feedback signal 12, this signal reaches ginseng in high-voltage signal 11
High level is exported when examining voltage VR1 setting values.
Further, the driving current signal sample circuit includes resistance R4, R5, R6, R7, R8, common-mode differential amplification
Device U3, comparator U4, U5；Common differential amplifier U3 positive input is connected with electromagnetic valve current signal 15, common-mode differential
Amplifier U3 reverse input end is connected with electromagnetic valve current signal 16, and common differential amplifier U3 output end passes through resistance R4
It is connected with comparator U4, U5 reverse input end, comparator U4 positive input and resistance R5 one end, resistance R6 one end
It is connected, resistance R5 other end connection reference voltage VRH；Comparator U4 output end and the resistance R6 other end, the first output
Signal 17 is connected；Comparator U5 positive input is connected with resistance R7 one end, resistance R8 one end, the resistance R7 other end
Reference voltage VRL is connected, comparator U5 output end is connected with the resistance R8 other end, the second output signal 18.
Relative to prior art, the present invention has the advantage that：
(1) electromagnetic valve driving current is directly gathered by middle common wire, and precision is high, control is flexible, not by metal-oxide-semiconductor up and down
The limitation of break-make, enormously simplify circuit；
(2) extra booster circuit is not needed, high-voltage energy storage capacitor is connected with magnetic valve, using the electricity of magnetic valve in itself
Sense characteristic is high-voltage capacitor charging, is boosted simultaneously in course of injection, boosting, circuit structure can be also supplemented in injection interval
It is simple easily to realize.
Brief description of the drawings
The accompanying drawing for constituting the part of the present invention is used for providing a further understanding of the present invention, schematic reality of the invention
Apply example and its illustrate to be used to explain the present invention, do not constitute inappropriate limitation of the present invention.In the accompanying drawings：
Fig. 1 is the jet drive circuit general principles of the high-speed electromagnetic valve with boost function described in the embodiment of the present invention
Schematic diagram；
Fig. 2 is the solenoid-driven main body circuit principle schematic described in the embodiment of the present invention；
Fig. 3 is the high-voltage signal sample circuit principle schematic described in the embodiment of the present invention；
Fig. 4 is the driving current signal sample circuit principle schematic described in the embodiment of the present invention；
Fig. 5 is the driving current and boosting waveform diagram described in the embodiment of the present invention.
Description of reference numerals：
1- solenoid-driven main body circuits, 2- high-voltage signal sample circuits, 3- driving current signal sample circuits, 4- electromagnetism
Valve jet drive control unit.
Embodiment
It should be noted that in the case where not conflicting, the embodiment in the present invention and the feature in embodiment can phases
Mutually combination.
Describe the present invention in detail below with reference to the accompanying drawings and in conjunction with the embodiments.
A kind of jet drive circuit of the high-speed electromagnetic valve with boost function, as shown in figure 1, solenoid-driven main body is electric
Road 1, high-voltage signal sample circuit 2 and driving current signal sample circuit 3, the high-voltage signal sample circuit 2 are used for gathering electricity
Magnet valve drives the high-voltage signal 11 of main body circuit 1, and feeds back to electromagnetic injection valve drive control unit 4；The driving current letter
Number sample circuit 3 is used for gathering the first electromagnetic valve current signal 15 of solenoid-driven main body circuit 1, the second electromagnetic valve current letter
Numbers 16, and feed back to electromagnetic injection valve drive control unit 4；The solenoid-driven main body circuit 1 drives for high-low-position metal-oxide-semiconductor
Circuit structure, receives the metal-oxide-semiconductor control signal that electromagnetic injection valve drive control unit 4 is sent, and driving high-speed electromagnetic valve completes spray
Action is penetrated, and will be adopted by high-voltage signal sample circuit 2 by the high-voltage signal of collection and by driving current signal sample circuit 3
The first electromagnetic valve current signal 15, the second electromagnetic valve current signal 16 of collection feed back to electromagnetic injection valve drive control unit 4, shape
Into closed-loop control.
As shown in Fig. 2 solenoid-driven main body circuit 1 of the present invention is the circuit structure that high-low-position metal-oxide-semiconductor drives.Bag
Include：Metal-oxide-semiconductor Q1, Q2, Q3, Q4, high-voltage energy storage capacitor E1, isolating diode D1, D2, sustained diode 3, D4, D5, driving pair
As for the first magnetic valve and the second magnetic valve, multipath electrovalve can be connected in actual applications.Specifically connected mode is：
High-order metal-oxide-semiconductor Q1 source electrode simultaneously with high-voltage signal 11, high pressure VH, high-voltage energy storage capacitor E1 positive pole, isolate two
Pole pipe D1 negative pole, sustained diode 4, D5 negative pole are connected；High-order metal-oxide-semiconductor Q1 grid is received to be driven from electromagnetic injection valve
First control signal 13 of dynamic control unit 4；High-order metal-oxide-semiconductor Q1 drain electrode simultaneously with electromagnetic valve current signal 15, sampling resistor
R1 one end, isolating diode D2 negative pole are connected with the negative pole of sustained diode 3, positive pole and the GND phases of sustained diode 3
Even；
High-order metal-oxide-semiconductor Q2 source electrode is connected with low pressure VL, isolating diode D1 positive pole, and high-order metal-oxide-semiconductor Q2 grid connects
Receive the second control signal 14 from electromagnetic injection valve drive control unit 4, high-order metal-oxide-semiconductor Q2 drain electrode and isolating diode D2
Positive pole be connected；The sampling resistor R1 other end and one end of electromagnetic valve current signal 16, the first magnetic valve and the second magnetic valve
It is connected (circuit can connect multipath electrovalve)；The other end of first magnetic valve and the positive pole of sustained diode 4, low level metal-oxide-semiconductor Q3
Source electrode is connected, and low level metal-oxide-semiconductor Q3 grid receives the 3rd control signal 19 from electromagnetic injection valve drive control unit 4；The
The other end of two magnetic valves is connected with the positive pole of sustained diode 5, low level metal-oxide-semiconductor Q4 source electrode；Low level metal-oxide-semiconductor Q4 grid
Receive the 4th control signal 20 from electromagnetic injection valve drive control unit 4；Low level metal-oxide-semiconductor Q4 drain electrode and low level metal-oxide-semiconductor
Q3 drain electrode is connected with GND.
As shown in figure 3, the high-voltage signal sample circuit 2 of the embodiment of the present invention is discharge circuit structure, including divider resistance
R3, R2, difference amplifier U1, comparator U2.Specifically connected mode is：
Divider resistance R2 one end is connected with high-voltage signal 11, the divider resistance R2 other end and the one of divider resistance R3
End, difference amplifier U1 positive input are connected, the divider resistance R3 other end and difference amplifier U1 reverse input end
It is connected with GND；Difference amplifier U1 output end is connected with comparator U2 positive input, comparator U2 reverse input end
It is connected with reference voltage VR1, comparator U2 output end output voltage feedback signal 12, this signal reaches ginseng in high-voltage signal 11
High level is exported when examining voltage VR1 setting values.
As shown in figure 4, the driving current signal sample circuit 3 of the embodiment of the present invention includes：Resistance R4, R5, R6, R7, R8,
Common differential amplifier U3, comparator U4, U5；The first electromagnetic valve current signal 15, the second electromagnetic valve current signal 16 of input
Amplified by common differential amplifier U3, then pass through two comparator U4, U5 output two-way feedback signals；First output signal
17 are changed into low level after driving current reaches VRH setting values, and the second output signal 18 is after driving current reaches VRL setting values
It is changed into low level.Specifically connected mode is：
Common differential amplifier U3 positive input is connected with the first electromagnetic valve current signal 15, common differential amplifier
U3 reverse input end is connected with the second electromagnetic valve current signal 16, common differential amplifier U3 output end by resistance R4 with
Comparator U4, U5 reverse input end are connected, comparator U4 positive input and resistance R5 one end, resistance R6 one end phase
Even, resistance R5 other end connection reference voltage VRH；Comparator U4 output end is believed with the resistance R6 other end, the first output
Numbers 17 are connected；Comparator U5 positive input is connected with resistance R7 one end, resistance R8 one end, and the resistance R7 other end connects
Reference voltage VRL is met, comparator U5 output end is connected with the resistance R8 other end, the second output signal 18.
The operation principle of jet drive circuit of high-speed electromagnetic valve of the present invention with boost function is：
Solenoid-driven main body circuit 1 receives the metal-oxide-semiconductor control signal that electromagnetic injection valve drive control unit 4 is sent, control
The break-make of metal-oxide-semiconductor processed, drive magnetic valve work, enables magnetic valve to form dual-stage Heising modulation waveform.Sampling resistor R1 can
Gather electromagnetic valve current signal and feedback signal, high-voltage signal sampling electricity are formed by the processing of driving current signal sample circuit 3
Road 2 forms voltage feedback signal after can gathering high-voltage energy storage capacitor E1 voltage signal, processing.Feedback signal returns to electromagnetism
Closed-loop control is formed in valve jet drive control unit 4.As shown in figure 1, by taking the first electromagnetic valve work principle as an example：
(1) injection start after, metal-oxide-semiconductor Q1 first, metal-oxide-semiconductor Q3 conducting, electric current by high-voltage energy storage capacitor E1, metal-oxide-semiconductor Q1,
Sampling resistor R1, the first magnetic valve, the loop of metal-oxide-semiconductor Q3 compositions, now the electric current rising on the first magnetic valve, utilizes magnetic valve
The inductance characteristic energy storage of itself.
(2) electric current rises to after firing current setting value that (this current value is by the reference in driving current signal sample circuit 3
Voltage VRH is set) metal-oxide-semiconductor Q1, metal-oxide-semiconductor Q3 are turned off, now electric current passes through sustained diode 3, sampling resistor R1, the first electromagnetism
Valve, sustained diode 4, the loop of high-voltage energy storage capacitor E1 compositions, reclaim high-voltage energy storage capacitor E1 energy, under electric current starts
Drop.
(3) after electric current is decreased by outside the return difference scope of the reference voltage VRH in driving current signal sample circuit 3,
Metal-oxide-semiconductor Q2, metal-oxide-semiconductor Q3 are turned on, electric current is made up of VL power supplys, metal-oxide-semiconductor Q2, sampling resistor R1, the first magnetic valve, metal-oxide-semiconductor Q3
Loop, the electric current on the first magnetic valve rises；Electric current, which rises to, turns off metal-oxide-semiconductor Q2, metal-oxide-semiconductor Q3 after firing current setting value.
Electric current is made up of sustained diode 3, sampling resistor R1, the first magnetic valve, sustained diode 4, high-voltage energy storage capacitor E1
Loop is high-voltage energy storage capacitor E1 charging again.So repeatedly, the purpose of boosting is reached.
(4) reach that (this magnitude of voltage is by high-voltage signal sample circuit 2 after boosting setting value in high-voltage energy storage capacitor E1 voltage
In reference voltage VR1 settings), drive circuit can stop boosting, and method is will turn off metal-oxide-semiconductor Q2, metal-oxide-semiconductor in the 3rd step
Q3, is changed to only turn off metal-oxide-semiconductor Q2, now electric current passes through sustained diode 3, sampling resistor R1, the first magnetic valve, metal-oxide-semiconductor Q3 groups
Into loop, now no longer carry out the charging to high-voltage energy storage capacitor E1.It can prevent excessive boost from causing to damage to circuit.Driving
Electric current and boosting schematic diagram are as shown in Figure 5.
(5) if injection period can not make high-voltage energy storage capacitor E1 voltage reach setting magnitude of voltage, in injection gap still
Boosting can be continued.Because the electric current of magnetic valve only can just be opened after reaching firing current and being kept for a period of time, therefore
It metal-oxide-semiconductor Q2 is simultaneously turned on and is turned off with all low level metal-oxide-semiconductor Q3, metal-oxide-semiconductor Q4 in injection gap, make each branch road electromagnetism
Valve electric current is less than electric current is maintained, so repeatedly, proceeds boosting.Boosting setting value is reached in high-voltage energy storage capacitor E1 voltage
Afterwards, whole metal-oxide-semiconductors are closed, stop boosting.This step can also be omitted in the not high system of driving high pressure requirement.
The present invention does not need extra DC-DC boost modules, using magnetic valve in itself as boost power inductance, in injection
While boosted, simplify circuit complexity.The injection that circuit response can meet rapidly various different model magnetic valves is driven
It is dynamic to require.
Embodiments of the invention circuit operation result shows that this circuit can be worked with drive magnetic valve and complete boost function,
As a result high efficient and reliable, and enormously simplify circuit, decreases the cost of design.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
God is with principle, and any modification, equivalent substitution and improvements made etc. should be included in the scope of the protection.
Claims (3)
1. a kind of jet drive circuit of the high-speed electromagnetic valve with boost function, it is characterised in that including solenoid-driven main body
Circuit (1), high-voltage signal sample circuit (2) and driving current signal sample circuit (3),
The high-voltage signal sample circuit (2) is used for gathering the high-voltage signal (11) of solenoid-driven main body circuit (1), and feeds back
Give electromagnetic injection valve drive control unit (4)；
The driving current signal sample circuit (3) is used for gathering the first electromagnetic valve current of solenoid-driven main body circuit (1)
Signal (15), the second electromagnetic valve current signal (16), and feed back to electromagnetic injection valve drive control unit (4)；
The solenoid-driven main body circuit (1) is high-low-position metal-oxide-semiconductor driving circuit structure, receives electromagnetic injection valve drive control
The metal-oxide-semiconductor control signal that unit (4) is sent, driving high-speed electromagnetic valve completes injection action, and passes through high-voltage signal sample circuit
(2) by the high-voltage signal of collection and by driving current signal sample circuit (3) by the first electromagnetic valve current signal of collection
(15), the second electromagnetic valve current signal (16) feeds back to electromagnetic injection valve drive control unit (4), forms closed-loop control；It is described
Solenoid-driven main body circuit (1) includes：Metal-oxide-semiconductor Q1, metal-oxide-semiconductor Q2, metal-oxide-semiconductor Q3, metal-oxide-semiconductor Q4, high-voltage energy storage capacitor E1, isolation
Diode D1, isolating diode D2, sustained diode 3, sustained diode 4, sustained diode 5, driven object are the first electricity
Magnet valve and the second magnetic valve, specific connected mode is：Metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q2 are high-order metal-oxide-semiconductor, metal-oxide-semiconductor Q3 and MOS
Pipe Q4 is low level metal-oxide-semiconductor；
High-order metal-oxide-semiconductor Q1 source electrode simultaneously with high-voltage signal (11), high pressure VH, high-voltage energy storage capacitor E1 positive pole, isolate two poles
Pipe D1 negative pole, sustained diode 4, the negative pole of sustained diode 5 is connected；High-order metal-oxide-semiconductor Q1 grid, which is received, comes from electromagnetism
The first control signal (13) of valve jet drive control unit (4)；High-order metal-oxide-semiconductor Q1 drain electrode simultaneously with the first electromagnetic valve current
Signal (15), sampling resistor R1 one end, isolating diode D2 negative pole are connected with the negative pole of sustained diode 3, the pole of afterflow two
Pipe D3 positive pole is connected with GND, and the driving current signal sample circuit (3) is by connecting the sampling resistor R1 on common wire
Two ends gather the first electromagnetic valve current signal (15), the second electromagnetic valve current signal of solenoid-driven main body circuit (1)
(16)；
High-order metal-oxide-semiconductor Q2 source electrode is connected with low pressure VL, isolating diode D1 positive pole, and high-order metal-oxide-semiconductor Q2 grid, which is received, to be come
From the second control signal (14) of electromagnetic injection valve drive control unit (4), high-order metal-oxide-semiconductor Q2 drain electrode and isolating diode D2
Positive pole be connected；The sampling resistor R1 other end and the second electromagnetic valve current signal (16), the first magnetic valve and the second magnetic valve
One end be connected；The other end of first magnetic valve is connected with the positive pole of sustained diode 4, low level metal-oxide-semiconductor Q3 source electrode, low level
Metal-oxide-semiconductor Q3 grid receives the 3rd control signal (19) from electromagnetic injection valve drive control unit (4)；Second magnetic valve
The other end is connected with the positive pole of sustained diode 5, low level metal-oxide-semiconductor Q4 source electrode；Low level metal-oxide-semiconductor Q4 grid is received from electricity
4th control signal (20) of magnet valve jet drive control unit (4)；Low level metal-oxide-semiconductor Q4 drain electrode and low level metal-oxide-semiconductor Q3 leakage
Pole is connected with GND.
2. the jet drive circuit of the high-speed electromagnetic valve according to claim 1 with boost function, it is characterised in that：Institute
Stating high-voltage signal sample circuit (2) includes divider resistance R3, divider resistance R2, difference amplifier U1, comparator U2；Specifically connect
The mode of connecing is：
Divider resistance R2 one end is connected with high-voltage signal (11), the divider resistance R2 other end and divider resistance R3 one end,
Difference amplifier U1 positive input is connected, the divider resistance R3 other end and difference amplifier U1 reverse input end and
GND is connected；Difference amplifier U1 output end is connected with comparator U2 positive input, comparator U2 reverse input end with
Reference voltage VR1 is connected, and comparator U2 output end output voltage feedback signal (12), this signal reaches in high-voltage signal (11)
High level is exported during reference voltage VR1 setting values.
3. the jet drive circuit of the high-speed electromagnetic valve according to claim 1 with boost function, it is characterised in that：Institute
Stating driving current signal sample circuit (3) includes resistance R4, resistance R5, resistance R6, resistance R7, resistance R8, common-mode differential amplification
Device U3, comparator U4, comparator U5；Common differential amplifier U3 positive input and first electromagnetic valve current signal (15) phase
Even, common differential amplifier U3 reverse input end is connected with the second electromagnetic valve current signal (16), common differential amplifier U3
Output end be connected by resistance R4 with comparator U4, comparator U5 reverse input end, comparator U4 positive input with
Resistance R5 one end, resistance R6 one end are connected, resistance R5 other end connection reference voltage VRH；Comparator U4 output end
The other end, the first output signal (17) with resistance R6 are connected；Comparator U5 positive input and resistance R7 one end, resistance
R8 one end is connected, resistance R7 other end connection reference voltage VRL, comparator U5 output end and the resistance R8 other end,
Second output signal (18) is connected.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510924629.XA CN105351128B (en) | 2015-12-11 | 2015-12-11 | A kind of jet drive circuit of the high-speed electromagnetic valve with boost function |
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| CN201510924629.XA CN105351128B (en) | 2015-12-11 | 2015-12-11 | A kind of jet drive circuit of the high-speed electromagnetic valve with boost function |
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| CN105351128B true CN105351128B (en) | 2017-10-27 |
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| CN107479430B (en) * | 2016-11-21 | 2020-07-28 | 北京驰亿隆科技有限公司 | Gearbox electromagnetic valve driving circuit and control method thereof |
| CN108110729B (en) * | 2017-12-19 | 2019-05-28 | 浙江劳士顿焊接设备有限公司 | A kind of high-low pressure protection detection circuit for electric welding machine |
| CN113848858A (en) * | 2021-09-29 | 2021-12-28 | 广西玉柴机器股份有限公司 | High-precision low-delay MEUN valve current acquisition method |
| CN114609900A (en) * | 2022-04-15 | 2022-06-10 | 中国兵器装备集团自动化研究所有限公司 | Electromagnetic valve driving method and driving system based on PID control |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104564461A (en) * | 2013-10-10 | 2015-04-29 | 常远 | Oil injector electromagnetic valve driving circuit controlled by current feedback |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5260597B2 (en) * | 2010-05-27 | 2013-08-14 | 日立オートモティブシステムズ株式会社 | Fuel injection apparatus and control method for internal combustion engine |
| CN202165166U (en) * | 2010-12-07 | 2012-03-14 | 中国第一汽车集团公司无锡油泵油嘴研究所 | Driving circuit of electromagnetic valve of oil spraying system of diesel engine |
| JP6022909B2 (en) * | 2012-11-29 | 2016-11-09 | 日立オートモティブシステムズ株式会社 | Electromagnetic load control device |
| JP6169404B2 (en) * | 2013-04-26 | 2017-07-26 | 日立オートモティブシステムズ株式会社 | Control device for solenoid valve and control device for internal combustion engine using the same |
| JP6079571B2 (en) * | 2013-11-11 | 2017-02-15 | 株式会社デンソー | Solenoid valve drive |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| CN105351128A (en) | 2016-02-24 |
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