CN105349966A - 一种绒面复合结构ZnO-TCO薄膜的制备方法及应用 - Google Patents
一种绒面复合结构ZnO-TCO薄膜的制备方法及应用 Download PDFInfo
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Abstract
一种绒面复合结构ZnO-TCO薄膜的制备方法及应用，所述绒面结构ZnO-TCO薄膜的结构特征为微米级绒面玻璃/MOCVD-ZnO:B纳米薄膜，制备步骤是：1)先用去离子水和稀盐酸(HCl)溶液对玻璃表面进行清洗，然后采用蒙砂粉进行蒙砂刻蚀；抛光次数为1-12次，形成微米级尺寸绒面玻璃，特征尺寸～5至25μm；2)以二乙基锌(DEZn)和水(H2O)为原料，氢稀释浓度为1.0％的硼烷B2H6作为掺杂气体，利用MOCVD技术在上述粗糙微米玻璃上生长纳米尺寸(～300-800nm)高电导ZnO:B透明导电薄膜，薄膜厚度为1000-3000nm。本发明的优点是：成本低廉，可实现微纳米尺寸复合结构的ZnO薄膜，提高光散射能力，用于pin型Si基叠层薄膜太阳电池，可实现较高光电转化效率。
Description
技术领域
本发明涉及太阳电池透明导电氧化物薄膜，特别是一种绒面结构ZnO-TCO薄膜的制备方法及其应用。
背景技术
氢化非晶硅(a-Si:H)的光学带宽为1.7eV左右，其吸收系数在短波方向较高，而氢化微晶硅(μc-Si:H)的光学带宽约为1.1eV，其吸收系数在长波方向较高，并能吸收到近红外长波区域，吸收波长可扩展至1100nm，这就使太阳光谱能得到更好利用。此外，相比于非晶硅薄膜材料，微晶硅薄膜材料结构有序性程度高，因此，微晶硅薄膜电池具有很好的器件稳定性，无明显衰退现象。由此可见，微晶硅薄膜太阳电池可较好地利用太阳光谱的近红外光区域，而新型非晶硅/微晶硅(a-Si:H/μc-Si:H)叠层薄膜太阳电池将扩展太阳光谱应用范围，整体提高电池稳定性和效率，参见：J.Meier,S.Dubail,R.Platz,etc.Sol.EnergyMater.Sol.Cells49(1997)35；ArvindShah,J.Meier,E.Vallat-Sauvain,etc,ThinSolidFilms403-404(2002)179。绒面结构(texturedstructure)透明导电氧化物-TCO薄膜的应用可以增强光散射作用，改善陷光效果，它对提高Si基薄膜太阳电池的效率和稳定性(SW效应)起到决定性的影响，参见：A.V.Shah,H.Schade,M.Vanecek,etc,ProgressinPhotovoltaics,12(2004)113。绒面结构主要与薄膜的晶粒尺寸，晶粒形状和粗糙度等因素有关。
MOCVD(metalorganicchemicalvapordeposition-MOCVD，即金属有机物化学气相沉积)技术可直接生长出绒面结构的ZnO薄膜，参见：X.L.Chen,X.H.Geng,J.M.Xue,etc.J.Cryst.Growth,296(2006)43；W.W.Wenas,A.Yamada,K.Takahashi,etc,J.Appl.Phys.70(1991)7119；S.U.Kroll,C.Bucher,etc,Sol.EnergyMater.Sol.Cells86(2005)385；S.L.Feitknecht,R.Schluchter,etc,Sol.EnergyMater.Sol.Cells90(2006)2960。薄膜生长过程为无粒子轰击的热分解过程，沉积温度低(～423K)；可以实现高速度、大面积且均匀的ZnO薄膜生长，符合产业化发展要求。典型的MOCVD-ZnO薄膜的表面形貌，晶粒呈现“类金字塔”状，XRD衍射谱中对应(110)峰择优取向，特征晶粒尺寸～300-500nm，平均粗糙度σrms＝40-80nm，电阻率ρ～1.5-3×10-3Ωcm。
国际上研究了绒面结构ZnO薄膜衬底并应用于薄膜电池。意大利ENEA研究组的M.L.Addonizio等人采用Ar等离子体对薄膜表面进行了不同刻蚀时间的处理，随着处理时间的增长，薄膜表面的金字塔装结构逐渐减小，最终变为弹坑状结构，虽然薄膜表面粗糙度和Haze值都有所下降，但表面较为圆滑，改善了TCO层与a-Si电池p层的接触特性，电池的Voc、Jsc都有所提高[AddonizioML,AntonaiaA.,ThinSolidFilms,2009,518(4):1026-1031.]。2013年，荷兰H.R.Tan等人采用HF和H2O2混合溶液对玻璃表面进行湿法腐蚀，获得了横向尺寸～20μm的弹坑状形貌。沉积AZO薄膜后，以其作为前电极制备纳米晶硅(nc-Si:H)电池的Jsc为12.0mA/cm2，效率为13.3％[TanHR,PsomadakiE,IsabellaO,etal..AppliedPhysicsLetters,2013,103:173905(1)-173905(5).]。2013年，新加坡S.Venkataraj等人采用Al诱导法对玻璃表面进行了刻蚀处理，具体方法为：首先，采用蒸发法在玻璃表面沉积Al薄膜，Al会和SiO2发生反应生成Si和Al2O3，再通过HNO3/HF混合溶液对其进行腐蚀，腐蚀后得到了横向尺寸～5μm的弹坑状结构，制备的AZO/glass在800nm处的Haze值～58％[VenkatarajS,WangJ,VayalakkaraP,etal.IEEEJournalofPhotovoltaics,3(2):605-612.]
综述所述，开发具有适合太阳电池应用的绒面ZnO-TCO薄膜成为当前科研工作中的重点和未来发展方向。
发明内容
本发明的目的是提供一种宽光谱高绒度绒面结构TCO薄膜，从而提高Si薄膜电池在光电性能，获得一种宽光谱高绒度绒面结构ZnO-TCO薄膜及其应用方法，采用湿法刻蚀技术获得粗糙表面的微米结构玻璃衬底，而后采用MOCVD技术制备纳米结构ZnO:B薄膜。
本发明的技术方案：
一种绒面微纳结构ZnO-TCO薄膜的制备方法，所述绒面结构ZnO-TCO薄膜的结构特征为微米结构玻璃/MOCVD-ZnO纳米结构，制备步骤如下：
1)先用去离子水和稀盐酸溶液对玻璃表面进行清洗，然后采用蒙砂粉进行蒙砂刻蚀，刻蚀时间为1分35秒，处理完之后，为去除蒙砂过程中生成的附着物，需要用主要成分为HF/H2SO4的抛光液对其进行抛光处理；抛光次数为1-12次，每次抛光时间为5分钟；获得的微米级玻璃衬底，其弹坑状尺寸为～5-20μm；
2)以纯度为99.995％二乙基锌和水为原料，氢稀释浓度为1.0％的硼烷B2H6作为掺杂气体，利用MOCVD技术在上述粗糙微米玻璃上生长纳米尺寸(300-800nm)高电导ZnO:B透明导电薄膜，薄膜厚度1000-3000nm，利用MOCVD技术的工艺参数：衬底温度为135-165℃，B2H6掺杂气体流量为二乙基锌流量的1.0％，反应压力为1.0Torr，生长速率为20-100nm/min。
进一步的，步骤1)中所述的抛光次数为3次。
一种所制备的绒面结构ZnO-TCO薄膜的应用，用于pin型Si基薄膜太阳电池。
本发明的优点及效果：湿法刻蚀技术可获得不同弹坑状微米结构玻璃衬底，而MOCVD技术可调节获得纳米尺寸ZnO:B薄膜，获得的玻璃衬底/ZnO薄膜具有微纳米复合结构，提高光散射特性，实现较高光电转化效率。
本发明的基本思想是结合MOCVD技术生长纳米结构ZnO晶粒尺寸和微米级粗糙绒面结构玻璃的优点，实现新型复合微米纳米结构ZnO:B薄膜，并将其应用于Si基薄膜太阳电池。首先，利用蒙砂刻蚀技术实现微米级玻璃衬底，其弹坑状尺寸为5-25μm；其次，MOCVD技术在粗糙的微米尺寸玻璃衬底上制备纳米级尺寸ZnO:B透明导电薄膜，金字塔状晶粒尺寸300-800nm。新型复合绒面结构ZnO:B应用于Si基薄膜太阳电池。
采用蒙砂刻蚀法对平面玻璃(超白玻璃)表面进行湿法腐蚀处理，从而获得微米级尺寸弹坑状结构，其横向尺寸范围为～8至25μm。当抛光次数(x)为1时，玻璃的表面粗糙度(RMSroughness)达到409.0nm，在400nm-1100nm的波长范围内绒度(Haze)值～80％。复合结构玻璃/ZnO:B薄膜方块电阻可达到～20欧姆。
附图说明
图1是蒙砂刻蚀获得的微米级尺寸玻璃扫描电镜(SEM)图像。
图2是该玻璃/MOCVD-ZnO薄膜扫描电镜(SEM)图像。
图3是该玻璃/MOCVD-ZnO薄膜应用于pin型Si基叠层薄膜太阳电池的电流-电压(J-V)曲线。
具体实施方式
实施例1：
一种绒面复合结构ZnO-TCO薄膜的制备方法，所述绒面结构ZnO-TCO薄膜的结构特征为微米级结构玻璃/纳米级尺寸MOCVD-ZnO:B薄膜，制备步骤如下：
1)为得到干净的玻璃表面，先用去离子水和稀盐酸(HCl)溶液对玻璃表面进行清洗，然后采用蒙砂粉进行蒙砂刻蚀，刻蚀时间为1分35秒，处理完之后，为去除蒙砂过程中生成的附着物，需要用主要成分为HF/H2SO4的抛光液(其成分为HF和H2SO4的水溶液，HF和H2SO4比例1-10，溶液浓度5-30％)对其进行抛光处理；抛光次数为3，每次抛光时间为5分钟；获得的微米级玻璃衬底，其弹坑状尺寸为～8-10μm；
图1是蒙砂刻蚀获得的微米级尺寸玻璃扫描电镜(SEM)图像，图中表明，玻璃呈现微米级尺寸的弹坑状形貌。
2)以纯度为99.995％二乙基锌(DEZn)和水(H2O)为原料，氢稀释浓度为1.0％的硼烷B2H6作为掺杂气体，利用MOCVD技术在上述粗糙微米玻璃上生长纳米尺寸(300-800nm)高电导ZnO:B透明导电薄膜，薄膜厚度2140nm，利用MOCVD技术的工艺参数：衬底温度为135-165℃，B2H6掺杂气体流量为二乙基锌流量的1.0％，反应压力为1.0Torr，生长速率为20-100nm/min。
图2是该玻璃/MOCVD-ZnO薄膜扫描电镜(SEM)图像，图中表明：薄膜表面呈现复合结构的微纳米相结合的ZnO薄膜。
将该玻璃/MOCVD-ZnO薄膜应用于pin型硅基薄膜太阳电池，为非晶硅a-Si:H太阳电池。与以传统平面玻璃/ZnO:B绒面结构薄膜作为前电极太阳电池相比，电池效率从6.88％提高至7.22％，如图3所示。
实施例2：
一种绒面结构ZnO-TCO薄膜的制备方法，所述绒面结构ZnO-TCO薄膜的结构特征为微米级结构玻璃/纳米级尺寸MOCVD-ZnO:B薄膜，制备步骤如下：
1)为得到干净的玻璃表面，先用去离子水和稀盐酸(HCl)溶液对玻璃表面进行清洗，然后采用蒙砂粉进行蒙砂刻蚀，刻蚀时间为1分35秒，处理完之后，为去除蒙砂过程中生成的附着物，需要用主要成分为HF/H2SO4的抛光液(其成分为HF和H2SO4的水溶液，HF和H2SO4比例1-10，溶液浓度5-30％)对其进行抛光处理；抛光次数为1，每次抛光时间为5分钟；获得的微米级玻璃衬底，其弹坑状尺寸为～5μm；
2)以纯度为99.995％二乙基锌(DEZn)和水(H2O)为原料，氢稀释浓度为1.0％的硼烷B2H6作为掺杂气体，利用MOCVD技术在上述粗糙微米玻璃上生长纳米尺寸高电导ZnO:B透明导电薄膜，薄膜厚度1500nm，利用MOCVD技术的工艺参数：衬底温度为135-165℃，B2H6掺杂气体流量为二乙基锌流量的1.0％，反应压力为1.0Torr，生长速率为20-100nm/min。
将该玻璃/MOCVD-ZnO薄膜应用于pin型硅基薄膜太阳电池，与实施例1相同。
实施例3：
一种绒面结构ZnO-TCO薄膜的制备方法，所述绒面结构ZnO-TCO薄膜的结构特征为微米级结构玻璃/纳米级尺寸MOCVD-ZnO:B薄膜，制备步骤如下：
1)为得到干净的玻璃表面，先用去离子水和稀盐酸(HCl)溶液对玻璃表面进行清洗，然后采用蒙砂粉进行蒙砂刻蚀，刻蚀时间为1分35秒，处理完之后，为去除蒙砂过程中生成的附着物，需要用主要成分为HF/H2SO4的抛光液(其成分为HF和H2SO4的水溶液，HF和H2SO4比例1-10，溶液浓度5-30％)对其进行抛光处理；抛光次数为12，每次抛光时间为5分钟；获得的微米级玻璃衬底，其弹坑状尺寸为～20μm；
2)以纯度为99.995％二乙基锌(DEZn)和水(H2O)为原料，氢稀释浓度为1.0％的硼烷B2H6作为掺杂气体，利用MOCVD技术在上述粗糙微米玻璃上生长纳米尺寸高电导ZnO:B透明导电薄膜，薄膜厚度1200nm，利用MOCVD技术的工艺参数：衬底温度为135-165℃，B2H6掺杂气体流量为二乙基锌流量的1.0％，反应压力为1.0Torr，生长速率为20-100nm/min。
将该玻璃/MOCVD-ZnO薄膜应用于pin型硅基薄膜太阳电池，与实施例1相同。
Claims (3)
1.一种绒面复合结构ZnO-TCO薄膜的制备方法，所述绒面结构ZnO-TCO薄膜的结构特征为微米结构玻璃/MOCVD-ZnO纳米结构，制备步骤如下：
1)先用去离子水和稀盐酸溶液对玻璃表面进行清洗，然后采用蒙砂粉进行蒙砂刻蚀，刻蚀时间为1分35秒，处理完之后，为去除蒙砂过程中生成的附着物，需要用主要成分为HF/H2SO4的抛光液对其进行抛光处理；抛光次数为1-12次，每次抛光时间为5分钟；获得的微米级玻璃衬底，其弹坑状尺寸为～5-20μm；
2)以纯度为99.995％二乙基锌和水为原料，氢稀释浓度为1.0％的硼烷B2H6作为掺杂气体，利用MOCVD技术在上述粗糙微米玻璃上生长纳米尺寸(300-800nm)高电导ZnO:B透明导电薄膜，薄膜厚度1000-3000nm，利用MOCVD技术的工艺参数：衬底温度为135-165℃，B2H6掺杂气体流量为二乙基锌流量的1.0％，反应压力为1.0Torr，生长速率为20-100nm/min。
2.根据权利要求1所述的绒面复合结构ZnO-TCO薄膜的制备方法，其特征在于：步骤1)中所述的抛光次数为3次。
3.一种权利要求1所制备的绒面结构ZnO-TCO薄膜的应用，其特征在于：用于pin型Si基叠层薄膜太阳电池。
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1945858A (zh) * | 2006-10-24 | 2007-04-11 | 南开大学 | MOCVD法超低温制备高电导率、绒面未掺杂ZnO薄膜 |
| CN101582468A (zh) * | 2009-06-19 | 2009-11-18 | 南开大学 | 高迁移率绒面结构IMO/ZnO复合薄膜及太阳电池应用 |
| CN101892464A (zh) * | 2010-06-18 | 2010-11-24 | 南开大学 | 一种柔性衬底绒面结构ZnO薄膜的制备及应用 |
-
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1945858A (zh) * | 2006-10-24 | 2007-04-11 | 南开大学 | MOCVD法超低温制备高电导率、绒面未掺杂ZnO薄膜 |
| CN101582468A (zh) * | 2009-06-19 | 2009-11-18 | 南开大学 | 高迁移率绒面结构IMO/ZnO复合薄膜及太阳电池应用 |
| CN101892464A (zh) * | 2010-06-18 | 2010-11-24 | 南开大学 | 一种柔性衬底绒面结构ZnO薄膜的制备及应用 |
Non-Patent Citations (1)
| Title |
|---|
| 陈新亮等: "太阳电池用绒面结构ZnO-TCO薄膜及光管理研究进展", 《材料导报A：综述篇》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113991019A (zh) * | 2021-12-27 | 2022-01-28 | 天津大学 | 一种增强有机半导体薄膜形貌稳定性的方法 |
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