CN105337525A - Half-bridge inverter eliminating dead zone time energy backflow, and control method thereof - Google Patents

Half-bridge inverter eliminating dead zone time energy backflow, and control method thereof Download PDF

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Publication number
CN105337525A
CN105337525A CN201510737306.XA CN201510737306A CN105337525A CN 105337525 A CN105337525 A CN 105337525A CN 201510737306 A CN201510737306 A CN 201510737306A CN 105337525 A CN105337525 A CN 105337525A
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igbt
special
electric capacity
bridge inverter
inductance
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CN201510737306.XA
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杜贵平
柳志飞
朱天生
杜发达
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South China University of Technology SCUT
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South China University of Technology SCUT
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Priority to CN201510737306.XA priority Critical patent/CN105337525A/en
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Abstract

The invention discloses a half-bridge inverter eliminating dead zone time energy backflow, and a control method thereof. The half-bridge inverter comprises an input DC voltage source, an inductor, two common IGBTs, two special IGBTs and three capacitors, wherein the anode of the first capacitor and the collector electrode of the first common are connected with the anode of the DC voltage source; the cathode of the second capacitor and the emitter electrode of the second common IGBT are connected with the cathode of the DC voltage source; the cathode of the first capacitor, the anode of the second capacitor, the collector electrode of the first special IGBT, the emitter electrode of the second special IGBT and the cathode of the third capacitor are connected with one end of a load; the emitter electrode of the first common IGBT, the collector electrode of the second common IGBT, the emitter electrode of the first special IGBT and the collector electrode of the second special IGBT are connected with one end of the inductor; and the other end of the inductor is connected with the anode of the third capacitor and the other end of the load. According to the invention, feedback of currents to an input power source within dead zone time is eliminated.

Description

A kind of half-bridge inverter of deadband eliminating time energy backflow and control method thereof
Technical field
The present invention relates to AC/DC and convert field, particularly relate to a kind of half-bridge inverter and control method thereof of deadband eliminating time energy backflow.
Background technology
The advantage such as non-isolation type half-bridge inverter has that structure is simple, power device is few, efficiency is high, volume is little, lightweight and cost is low, is widely adopted in commercial Application.Conventional half-bridge inverter circuit is straight-through in order to avoid brachium pontis switching tube, need between drive singal to arrange dead band, adding of dead band will cause fundamental voltage loss, low-order harmonic increases, output current distortion, have impact on output voltage waveforms quality, the backflow exporting energy can be caused simultaneously, the circulation of unnecessary energy can increase the loss of converter, also can affect the Pressure and Control of input capacitance.The main circuit of current solution Dead Time energy backflow will adopt diode-clamped three-level inverter circuit, diode-clamped three-level inverter circuit complex structure, power device is many, controls also comparatively complicated, the increase of the more cost of the loss that causes of device simultaneously more.
Summary of the invention
For the deficiency that prior art exists, the present invention discloses a kind of half-bridge inverter of deadband eliminating time energy backflow, and while the problem of the energy backflow when effective deadband eliminating time, loss is lower, and device is less, controls simple.
In order to reach the above object, the present invention adopts following technical scheme:
A half-bridge inverter for deadband eliminating time energy backflow, comprising: conventional IGBT, two special IGBT, three electric capacity not with anti-paralleled diode of input dc power potential source, an inductance, two band anti-paralleled diodes; The positive pole of the first electric capacity, the collector electrode of the first conventional IGBT are connected with the positive pole of input dc power potential source; The negative pole of the second electric capacity, the emitter of the second conventional IGBT are connected with the negative pole of input dc power potential source; The negative pole of the collector electrode of the negative pole of the first electric capacity, the positive pole of the second electric capacity, the first special IGBT, the emitter of the second special IGBT, the 3rd electric capacity is connected with one end of load; The emitter of the first conventional IGBT, the collector electrode of the second conventional IGBT, the emitter of the first special IGBT, the collector electrode of the second special IGBT are connected with one end of inductance; The other end of inductance is connected with the anode of the 3rd electric capacity, the load other end.
Described first conventional IGBT and the second conventional IGBT contains anti-paralleled diode, described first special IGBT and the second special IGBT is not containing anti-paralleled diode, four described IGBT all can bear reverse voltage, select company of Fuji the 5th generation Trench-Fs series IGBT pipe to select company of Fuji the 5th generation Trench-Fs series IGBT pipe as the special IGBT of preferred the present invention first and the second special IGBT.
Described first special IGBT and the second special IGBT also can with the controlled switching tube of ambipolar SiC one-way conduction.
Control method for the half-bridge inverter of above-mentioned a kind of deadband eliminating time energy backflow is: can adopt traditional inversion control strategy to the control of the first conventional IGBT and the second conventional IGBT, the control procedure of the first special IGBT and the second special IGBT is as follows: when converter current i direction is forward, namely when converter is operated in positive half period, control the first special IGBT conducting, second special IGBT turns off, now when the first conventional IGBT turns off, it is electric current afterflow that inductance, load, the first special IGBT form a conductive loop; With should converter current i direction be reverse time, namely, when converter is operated in negative half-cycle, controls the first special IGBT and turn off, the second special IGBT conducting, now when the second conventional IGBT turns off, it is electric current afterflow that inductance, load, the second special IGBT form a conductive loop.
Compared with prior art, beneficial effect of the present invention has:
1, compared with conventional half-bridge inverter circuit, the present invention has deadband eliminating time energy reflux problem, and reduce unnecessary energy circulation loss, efficiency is higher;
2, compared with diode-clamped three-level inverter circuit, converter device of the present invention is less, and circuit is simple, and in inversion circuit, power device is less simultaneously, so cost and efficiency are all higher;
3, compared with T-type neutral-point-clamped three-level inverter, when Dead Time appears in circuit, the continuous current circuit power device of inductive current is less, and loss is also lower.
Accompanying drawing explanation
Fig. 1 is the half-bridge inverter circuit diagram of a kind of deadband eliminating time energy backflow of the present invention;
Fig. 2 a, 2b be respectively the first conventional IGBT conducting when the positive half cycle of output AC voltage of circuit shown in Fig. 1, other IGBT turn off time operating diagram and the first special IGBT conducting, other IGBT turn off time operating diagram;
Fig. 3 a, 3b be respectively the second conventional IGBT conducting when output AC voltage negative half period of circuit shown in Fig. 1, other IGBT turn off time operating diagram and the second special IGBT conducting, other IGBT turn off time operating diagram.
Embodiment
Below in conjunction with embodiment and accompanying drawing, the present invention is described in further detail illustrates, but embodiments of the present invention are not limited thereto.If have process or the parameter of not special detailed description it is noted that following, be all that those skilled in the art can refer to existing techniques in realizing.
As shown in Figure 1, a half-bridge inverter for deadband eliminating time energy backflow, comprising: the conventional IGBT(S1-S2 of input dc power potential source Ui, inductance L, two band anti-paralleled diodes), two special IGBT(T1-T2 not with anti-paralleled diode), three electric capacity (C1-C3); The positive pole of the first electric capacity C1, the collector electrode of the first conventional IGBTS1 are connected with the positive pole of input dc power potential source Ui; The negative pole of the second electric capacity C2, the emitter of the second conventional IGBTS2 are connected with the negative pole of input dc power potential source Ui; The collector electrode of the negative pole of the first electric capacity C1, the positive pole of the second electric capacity C2, the first special IGBTT1, the emitter of the second special IGBTT2, the negative pole of the 3rd electric capacity C3 are connected with one end of load R; The emitter of the first conventional IGBTS1, the collector electrode of the second conventional IGBTS2, the emitter of the first special IGBTT1, the collector electrode of the second special IGBTT2 are connected with one end of inductance L; The other end of inductance L is connected with the anode of the 3rd electric capacity C3, the load R other end.
Described first conventional IGBTS1 and the second conventional IGBTS2 contains anti-paralleled diode, described first special IGBTT1 and the second special IGBTT2 is not containing anti-paralleled diode, four described IGBT all can bear reverse voltage, select company of Fuji the 5th generation Trench-Fs series IGBT pipe to select company of Fuji the 5th generation Trench-Fs series IGBT pipe as the special IGBTT1 of preferred the present invention first and the second special IGBTT2.
Described first special IGBTT1 and the second special IGBTT2 also can with the controlled switching tube of ambipolar SiC one-way conduction.
As shown in Fig. 2 a ~ 2b, when circuit working shown in Fig. 1 is at the positive half cycle of output AC voltage, input dc power potential source U ito the first electric capacity C 1with the second electric capacity C 2charging; First conventional IGBTS1 conducting, when the second conventional IGBTS2, the first special IGBTT1, the second special IGBTT2 turn off, the first electric capacity C 1, the first conventional IGBTS1, inductance L, load R form a conductive loop, wherein the first electric capacity C 1power supply; First special IGBTT1 conducting, when the first conventional IGBTS1 conducting, the second conventional IGBTS2, the second special IGBTT2 turn off, it is electric current afterflow that inductance L, load R, the first special IGBTT1 conducting form a conductive loop.As can be seen from these two kinds of operating diagram, when the first conventional IGBTS1, the second conventional IGBTS2 turn off, i.e. Dead Time, electric current can not feed back to input DC power, avoids the backflow of energy.
As shown in Fig. 3 a ~ 3b, when circuit working shown in Fig. 1 is at the positive half cycle of output AC voltage, input dc power potential source U ito the first electric capacity C 1with the second electric capacity C 2charging; Second conventional IGBTS2 conducting, when the first conventional IGBTS1, the first special IGBTT1, the second special IGBTT2 turn off, the second electric capacity C 2, the second conventional IGBTS2, inductance L, load R form a conductive loop, wherein the second electric capacity C 2power supply; Second special IGBTT2 conducting, when the second conventional IGBTS2, the first conventional IGBTS1, the first special IGBTT1 turn off, it is electric current afterflow that inductance L, load R, the second special IGBTT2 conducting form a conductive loop.As can be seen from these two kinds of operating diagram, when the first conventional IGBTS1, the second conventional IGBTS2 turn off, i.e. Dead Time, electric current can not feed back to input DC power, avoids the backflow of energy.
Control method for a kind of half-bridge inverter of deadband eliminating time energy backflow is: can adopt traditional inversion control strategy to the control of the first conventional IGBTS1 and the second conventional IGBTS2, the control procedure of the first special IGBTT1 and the second special IGBTT2 is as follows: when converter current i direction is forward, namely when converter is operated in positive half period, now when the first conventional IGBTS1 turns off, control the first special IGBTT1 conducting, second special IGBTT2 turns off, and it is electric current afterflow that inductance L, load R, the first special IGBTT1 form a conductive loop; With should converter current i direction be reverse time, namely when converter is operated in negative half-cycle, now when the second conventional IGBTS2 turns off, control the first special IGBTT1 to turn off, second special IGBTT2 conducting, it is electric current afterflow that inductance L, load R, the second special IGBTT2 form a conductive loop.
Those skilled in the art can make various amendment to this specific embodiment or supplement or adopt similar mode to substitute under the prerequisite without prejudice to principle of the present invention and essence, but these changes all fall into protection scope of the present invention.Therefore the technology of the present invention scope is not limited to above-described embodiment.

Claims (5)

1. the deadband eliminating time energy backflow a half-bridge inverter, it is characterized in that, by input dc power potential source (Ui), an inductance (L), two conventional IGBT(S1-S2), two special IGBT(T1-T2), three electric capacity (C1-C3); The positive pole of the first electric capacity (C1), the first conventional IGBT(S1) collector electrode be connected with the positive pole of input dc power potential source (Ui); The negative pole of the second electric capacity (C2), the second conventional IGBT(S2) emitter be connected with the negative pole of input dc power potential source (Ui); The negative pole of the first electric capacity (C1), the positive pole of the second electric capacity (C2), the first special IGBT(T1) collector electrode, the second special IGBT(T2) emitter, the 3rd electric capacity (C3) negative pole be connected with one end of load (R); First conventional IGBT(S1) emitter, the second conventional IGBT(S2) collector electrode, the first special IGBT(T1) emitter, the second special IGBT(T2) collector electrode be connected with one end of inductance (L); The other end of inductance (L) is connected with the anode of the 3rd electric capacity (C3), load (R) other end.
2. the half-bridge inverter of a kind of deadband eliminating time energy backflow according to claim 1, it is characterized in that, described first conventional IGBT(S1) and the second conventional IGBT(S2) all contain anti-paralleled diode, described first special IGBT(T1) and the second special IGBT(T2) not containing anti-paralleled diode, four described IGBT all can bear reverse voltage.
3. the half-bridge inverter of a kind of deadband eliminating time energy backflow according to claim 1, is characterized in that, the first special IGBT(T1) and the second special IGBT(T2) select company of Fuji the 5th generation Trench-Fs series IGBT pipe.
4. the half-bridge inverter of a kind of deadband eliminating time energy backflow according to claim 2, is characterized in that, the first special IGBT(T1) and the second special IGBT(T2) switching tube that adopts ambipolar SiC one-way conduction controlled.
5. for the control method of the half-bridge inverter of a kind of deadband eliminating time energy backflow described in any one of claim 1-4, it is characterized in that, to the first conventional IGBT(S1) and the second conventional IGBT(S2) control adopt traditional inversion control strategy, first special IGBT(T1) and the second special IGBT(T2) control procedure as follows: when converter current i direction is forward, namely when converter is operated in positive half period, control the first special IGBT(T1) conducting, second special IGBT(T2) turn off, now as the first conventional IGBT(S1) when turning off, inductance (L), load (R), first special IGBT(T1) to form a conductive loop be electric current afterflow, with should converter current (i) direction is reverse time, namely when converter is operated in negative half-cycle, control the first special IGBT(T1) turn off, second special IGBT(T2) conducting, now as the second conventional IGBT(S2) when turning off, inductance (L), load (R), the second special IGBT(T2) to form a conductive loop be electric current afterflow.
CN201510737306.XA 2015-11-01 2015-11-01 Half-bridge inverter eliminating dead zone time energy backflow, and control method thereof Pending CN105337525A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106160447A (en) * 2016-07-08 2016-11-23 南京航空航天大学 A kind of Dead Time optimal control method being applicable to SiC base brachium pontis power circuit

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090168461A1 (en) * 2007-12-27 2009-07-02 Tdk Corporation Switching power supply unit
JP2012055083A (en) * 2010-09-01 2012-03-15 Meidensha Corp Power conversion apparatus
CN103368427A (en) * 2012-04-05 2013-10-23 艾默生网络能源有限公司 Single-phase inverter and system thereof and three-phase inverter and system thereof
CN103516242A (en) * 2013-09-22 2014-01-15 中国船舶重工集团公司第七一〇研究所 Three-level three-phase half-bridge inverter circuit
CN205377702U (en) * 2015-11-01 2016-07-06 华南理工大学 Eliminate half -bridge dc -to -ac converter of blind spot time energy backward flow

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090168461A1 (en) * 2007-12-27 2009-07-02 Tdk Corporation Switching power supply unit
JP2012055083A (en) * 2010-09-01 2012-03-15 Meidensha Corp Power conversion apparatus
CN103368427A (en) * 2012-04-05 2013-10-23 艾默生网络能源有限公司 Single-phase inverter and system thereof and three-phase inverter and system thereof
CN103516242A (en) * 2013-09-22 2014-01-15 中国船舶重工集团公司第七一〇研究所 Three-level three-phase half-bridge inverter circuit
CN205377702U (en) * 2015-11-01 2016-07-06 华南理工大学 Eliminate half -bridge dc -to -ac converter of blind spot time energy backward flow

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106160447A (en) * 2016-07-08 2016-11-23 南京航空航天大学 A kind of Dead Time optimal control method being applicable to SiC base brachium pontis power circuit

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