CN105336798A - Photoresistor and manufacturing method thereof - Google Patents
Photoresistor and manufacturing method thereof Download PDFInfo
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- CN105336798A CN105336798A CN201510647860.9A CN201510647860A CN105336798A CN 105336798 A CN105336798 A CN 105336798A CN 201510647860 A CN201510647860 A CN 201510647860A CN 105336798 A CN105336798 A CN 105336798A
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- chloride
- photo resistance
- photosensitive layer
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 239000000203 mixture Substances 0.000 claims abstract description 48
- MAYVZUQEFSJDHA-UHFFFAOYSA-N 1,5-bis(methylsulfanyl)naphthalene Chemical compound C1=CC=C2C(SC)=CC=CC2=C1SC MAYVZUQEFSJDHA-UHFFFAOYSA-N 0.000 claims abstract description 29
- MEANOSLIBWSCIT-UHFFFAOYSA-K gadolinium trichloride Chemical compound Cl[Gd](Cl)Cl MEANOSLIBWSCIT-UHFFFAOYSA-K 0.000 claims abstract description 29
- ATINCSYRHURBSP-UHFFFAOYSA-K neodymium(iii) chloride Chemical compound Cl[Nd](Cl)Cl ATINCSYRHURBSP-UHFFFAOYSA-K 0.000 claims abstract description 29
- BHXBZLPMVFUQBQ-UHFFFAOYSA-K samarium(iii) chloride Chemical compound Cl[Sm](Cl)Cl BHXBZLPMVFUQBQ-UHFFFAOYSA-K 0.000 claims abstract description 29
- PYOOBRULIYNHJR-UHFFFAOYSA-K trichloroholmium Chemical compound Cl[Ho](Cl)Cl PYOOBRULIYNHJR-UHFFFAOYSA-K 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 28
- 239000000463 material Substances 0.000 claims abstract description 24
- 239000000919 ceramic Substances 0.000 claims description 64
- 239000011159 matrix material Substances 0.000 claims description 64
- 229910052796 boron Inorganic materials 0.000 claims description 50
- 238000005507 spraying Methods 0.000 claims description 27
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 16
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 14
- 239000002994 raw material Substances 0.000 claims description 14
- 239000003822 epoxy resin Substances 0.000 claims description 7
- 229920000647 polyepoxide Polymers 0.000 claims description 7
- 238000010422 painting Methods 0.000 claims description 2
- 229910052593 corundum Inorganic materials 0.000 claims 2
- 229910001845 yogo sapphire Inorganic materials 0.000 claims 2
- 230000035945 sensitivity Effects 0.000 abstract description 17
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 abstract description 12
- 230000032683 aging Effects 0.000 abstract description 11
- YKYOUMDCQGMQQO-UHFFFAOYSA-L cadmium dichloride Chemical compound Cl[Cd]Cl YKYOUMDCQGMQQO-UHFFFAOYSA-L 0.000 abstract description 7
- 229910021591 Copper(I) chloride Inorganic materials 0.000 abstract description 5
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 abstract description 5
- 230000008859 change Effects 0.000 abstract description 4
- 230000008901 benefit Effects 0.000 abstract description 3
- 230000009467 reduction Effects 0.000 abstract description 2
- 229910052761 rare earth metal Inorganic materials 0.000 abstract 6
- -1 rare-earth chloride Chemical class 0.000 abstract 6
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 7
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 7
- 230000002950 deficient Effects 0.000 description 6
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000010949 copper Substances 0.000 description 2
- 229910001431 copper ion Inorganic materials 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000006399 behavior Effects 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- 238000007405 data analysis Methods 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/085—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors the device being sensitive to very short wavelength, e.g. X-ray, Gamma-rays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Conductive Materials (AREA)
- Photoreceptors In Electrophotography (AREA)
Abstract
The invention discloses a photoresistor and a manufacturing method thereof. The method is characterized by adopting rare-earth chloride to replace CuCl; adding the rare-earth chloride, the weight percentage of which is 0.1%, to photosensitive layer materials CdS, CdSe and CdCl2, wherein the rare-earth chloride is one or a mixture of two or more than two of holmium chloride, neodymium chloride, gadolinium chloride, dysprosium chloride and samarium chloride; and adjusting proportion of the three materials of CdS, CdSe and CdCl2, wherein the rare-earth chloride content is very small, so that the material cost of the photoresistor is not influenced, and through the combination of the rare-earth chloride and the three materials of CdS, CdSe and CdCl2, dark resistance of the photoresistor can be increased, and bright resistance of the photoresistor can be can be reduced. The advantages are that sensitivity of the photoresistor can be improved; the stability of the rare-earth chloride is relatively high, so that the photoresistor is not easy to change in the aging process, and reduction of other performance parameters of the photoresistor does not be caused; and since the stability of the photoresistor in the in the aging process is high, rejection rate is greatly reduced.
Description
Technical field
The present invention relates to a kind of photo resistance, especially relate to a kind of photo resistance and preparation method thereof.
Background technology
Photo resistance is mainly used in various Light Electronic Control System, as the aspect such as photoelectricity automatic switch door, automatic lighting system, Automatic Water System, automatic safety device, photoelectric counter and photoelectric follow-up mechanically.
Existing photo resistance generally includes ceramic matrix, photosensitive layer and two electrodes, and photosensitive layer is coated on ceramic matrix surface, and photosensitive layer and ceramic matrix form photo resistance main body, and two electrodes are arranged on the two ends of photo resistance main body respectively.Photo resistance at ambient temperature, through the resistance value that certain hour is measured after complete dark, is called dark resistance.The resistance value that photo resistance records after 10 seconds in 100Lux illumination, is called the light resistance of photo resistance under this illumination; The dark resistance of photo resistance is the sensitivity of photo resistance with the ratio of light resistance, and ratio is larger, and sensitivity is higher.Sensitivity is an important performance characteristic of photo resistance.The height of photo resistance sensitivity decides primarily of the performance of its photosensitive layer, and the material of photosensitive layer directly determines its performance.
The photosensitive layer of photo resistance is high temperature sintering and being formed after photosensitive solution is coated in the surface of ceramic matrix.The photosensitive layer of traditional photo resistance mainly comprises CdS (cadmium sulfide), CdSe (cadmium selenide) and CdCl
2(dichloride cadmium) three kinds of materials, photosensitive solution is by CdS, CdSe and CdCl
2be dissolved in ionized water after three kinds of material mixing and obtain.The sensitivity of traditional photo resistance can not meet the high-precision requirement of modern Light Electronic Control System.At present, people are by adding CuCl in the photo layer
2(dichloride copper) material improves the dark resistance of photo resistance and reduces its light resistance, thus improves the sensitivity of photo resistance.Although add CuCl
2the mode of material can improve the sensitivity of photo resistance, but because copper ion exists unsteadiness, namely univalent copper ion and bivalent cupric ion can change mutually, photo resistance performance parameter after aging technique will be caused thus to reduce, less stable, one of outstanding behaviours is that percent defective is high, reaches about 15%.
Summary of the invention
It is higher that one of technical problem to be solved by this invention is to provide a kind of sensitivity, and in the higher photo resistance of aging technique rear stability.
The present invention one of to solve the problems of the technologies described above the technical scheme adopted: a kind of photo resistance, comprise ceramic matrix, photosensitive layer and two electrodes, described photosensitive layer is coated on described ceramic matrix surface, described photosensitive layer and described ceramic matrix form photo resistance main body, two electrodes are arranged on the two ends of described photo resistance main body respectively, and described photosensitive layer is composed of the following components:
Described rare earth-iron-boron is a kind of in holmium chloride, neodymium chloride, gadolinium chloride, dysprosium chloride and samarium trichloride or the mixture for two or more.
Rare earth-iron-boron is the mixture of holmium chloride, neodymium chloride, gadolinium chloride, dysprosium chloride and samarium trichloride, and described rare earth-iron-boron is composed of the following components:
The thickness of described photosensitive layer is 2-5 micron.
The alundum (Al2O3) that described ceramic matrix is more than 93% by purity is prepared from.
Compared with prior art, the advantage of photo resistance of the present invention is to adopt rare earth-iron-boron to replace CuCl
2, by photosensitive layer material C dS, CdSe and CdCl
2middle interpolation percentage by weight is the rare earth-iron-boron of 0.1%, and rare earth-iron-boron is a kind of in holmium chloride, neodymium chloride, gadolinium chloride, dysprosium chloride and samarium trichloride or the mixture for two or more, and adjusts CdS, CdSe and CdCl
2the proportioning of three kinds of materials, rare earth-iron-boron content is very little, can not affect the material cost of photo resistance, and rare earth-iron-boron and CdS, CdSe and CdCl
2three kinds of combinations of materials can increase the dark resistance of photo resistance together, reduce the light resistance of photo resistance, improve the sensitivity of photo resistance thus, and the stability of rare earth-iron-boron is higher than Cu ion, be not easy to change in photo resistance aging technique, not only can not cause the reduction of other performance parameter of photo resistance, and the aging rear stability of photo resistance is higher, percent defective significantly reduces;
When the mixture that rare earth-iron-boron is holmium chloride, neodymium chloride, gadolinium chloride, dysprosium chloride and samarium trichloride, rare earth-iron-boron is composed of the following components: when the dysprosium chloride that the neodymium chloride that the holmium chloride that percentage by weight is 40%-45%, percentage by weight are 20%-25%, percentage by weight are the gadolinium chloride of 10%-20%, percentage by weight is 10%-15% and percentage by weight are the samarium trichloride of 10%-15%, the sensitivity of photo resistance can improve about 50%, and percent defective can be controlled within 5%.
Two of technical problem to be solved by this invention is to provide a kind of manufacture method of photo resistance, and it is higher that this manufacture method makes the photo resistance sensitivity obtained, and stability is higher in aging technique.
Two technical schemes adopted that the present invention solves the problems of the technologies described above are: a kind of manufacture method of photo resistance, comprises the following steps:
1. ceramic matrix is prepared;
2. photosensitive solution is prepared:
2.-1 photosensitive layer mixture is obtained after being mixed by each raw material according to following proportioning configuration photosensitive layer raw material:
Described rare earth-iron-boron is a kind of in holmium chloride, neodymium chloride, gadolinium chloride, dysprosium chloride and samarium trichloride or the mixture for two or more;
2.-2 to be dissolved in ionized water by photosensitive layer mixture and to obtain photosensitive solution, wherein in photosensitive solution, the percentage by weight of photosensitive layer mixture is 30%, and the percentage by weight of ionized water is 70%;
3. by the surface of photosensitive solution spraying at ceramic matrix, photosensitive layer is formed;
4. after the ceramic matrix after spraying being left standstill 10-15 minute at normal temperatures and pressures, then sinter 15 minutes under 380-1300 DEG C of high temperature, obtain photo resistance main body.
5. two electrodes are arranged on photo resistance main body two ends, obtain photo resistance.
Rare earth-iron-boron is the mixture of holmium chloride, neodymium chloride, gadolinium chloride, dysprosium chloride and samarium trichloride, and described rare earth-iron-boron is composed of the following components:
Described step 4. after, described step 5. before also comprise and be coated with the step of separator, the step of described painting separator is: at the surface spraying separator of photosensitive layer, and the material of separator is epoxy resin.
Described step 3. in photosensitive solution is repeatedly sprayed on the surface of ceramic matrix, spraying number of times is 3-4 time, and the thickness of described photosensitive layer is 2-5 micron.
The alundum (Al2O3) that described ceramic matrix is more than 93% by purity is prepared from.
Compared with prior art, the advantage of the manufacture method of photo resistance of the present invention is in melting process, adopt rare earth-iron-boron to replace CuCl
2, at photosensitive layer material C dS, CdSe and CdCl
2middle interpolation percentage by weight is the rare earth-iron-boron of 0.1%, and rare earth-iron-boron is a kind of in holmium chloride, neodymium chloride, gadolinium chloride, dysprosium chloride and samarium trichloride or the mixture for two or more, and adjusts CdS, CdSe and CdCl
2the proportioning of three kinds of materials, after having prepared burden, adopt the preparation method of the photo resistance of existing maturation to prepare photo resistance, manufacture craft is simple, and rare earth-iron-boron content is very little, the material cost of photo resistance can not be affected, and rare earth-iron-boron and CdS, CdSe and CdCl
2three kinds of combinations of materials can increase the dark resistance of photo resistance together, reduce the light resistance of photo resistance, the sensitivity of photo resistance can be improved thus, and the stability of rare earth-iron-boron is higher than Cu ion, photo resistance is not easy to change in aging technique, in photo resistance aging technique, stability is higher, and percent defective significantly reduces;
When the mixture that rare earth-iron-boron is holmium chloride, neodymium chloride, gadolinium chloride, dysprosium chloride and samarium trichloride, rare earth-iron-boron is composed of the following components: when the dysprosium chloride that the neodymium chloride that the holmium chloride that percentage by weight is 40%-45%, percentage by weight are 20%-25%, percentage by weight are the gadolinium chloride of 10%-20%, percentage by weight is 10%-15% and percentage by weight are the samarium trichloride of 10%-15%, the sensitivity of photo resistance can improve about 50%, and percent defective can be controlled within 5%;
After step 4.; 5. step also comprises the step being coated with separator before; the step being coated with separator is: at the surface spraying separator of photosensitive layer; the material of separator is epoxy resin; other spectrum in photo resistance use procedure beyond visible ray can be eliminated on the one hand by separator; the sensitivity of further raising photo resistance, can carry out moisture protection on the other hand, improves the useful life of photo resistance.
Embodiment
The invention discloses a kind of photo resistance, below in conjunction with embodiment, photo resistance of the present invention is described in further detail.
Embodiment one: a kind of photo resistance, comprise ceramic matrix, photosensitive layer and two electrodes, photosensitive layer is coated on ceramic matrix surface, and photosensitive layer and ceramic matrix form photo resistance main body, two electrodes are arranged on the two ends of photo resistance main body respectively, and photosensitive layer is composed of the following components:
Rare earth-iron-boron is a kind of in holmium chloride, neodymium chloride, gadolinium chloride, dysprosium chloride and samarium trichloride or the mixture for two or more.
Embodiment two: a kind of photo resistance, comprise ceramic matrix, photosensitive layer and two electrodes, photosensitive layer is coated on ceramic matrix surface, and photosensitive layer and ceramic matrix form photo resistance main body, two electrodes are arranged on the two ends of photo resistance main body respectively, and photosensitive layer is composed of the following components:
In the present embodiment, rare earth-iron-boron is the mixture of holmium chloride, neodymium chloride, gadolinium chloride, dysprosium chloride and samarium trichloride, and described rare earth-iron-boron is composed of the following components:
In the present embodiment, the thickness of photosensitive layer is 5 microns.
In the present embodiment, the alundum (Al2O3) that ceramic matrix is more than 93% by purity is prepared from.
Embodiment three: a kind of photo resistance, comprise ceramic matrix, photosensitive layer and two electrodes, photosensitive layer is coated on ceramic matrix surface, and photosensitive layer and ceramic matrix form photo resistance main body, two electrodes are arranged on the two ends of photo resistance main body respectively, and photosensitive layer is composed of the following components:
In the present embodiment, rare earth-iron-boron is the mixture of holmium chloride, neodymium chloride, gadolinium chloride, dysprosium chloride and samarium trichloride, and described rare earth-iron-boron is composed of the following components:
In the present embodiment, the thickness of photosensitive layer is 2 microns.
In the present embodiment, the alundum (Al2O3) that ceramic matrix is more than 93% by purity is prepared from.
Embodiment four: a kind of photo resistance, comprise ceramic matrix, photosensitive layer and two electrodes, photosensitive layer is coated on ceramic matrix surface, and photosensitive layer and ceramic matrix form photo resistance main body, two electrodes are arranged on the two ends of photo resistance main body respectively, and photosensitive layer is composed of the following components:
In the present embodiment, rare earth-iron-boron is the mixture of holmium chloride, neodymium chloride, gadolinium chloride, dysprosium chloride and samarium trichloride, and described rare earth-iron-boron is composed of the following components:
In the present embodiment, the thickness of photosensitive layer is 2 microns.
In the present embodiment, the alundum (Al2O3) that ceramic matrix is more than 93% by purity is prepared from.
Embodiment five: a kind of photo resistance, comprise ceramic matrix, photosensitive layer and two electrodes, photosensitive layer is coated on ceramic matrix surface, and photosensitive layer and ceramic matrix form photo resistance main body, two electrodes are arranged on the two ends of photo resistance main body respectively, and photosensitive layer is composed of the following components:
In the present embodiment, rare earth-iron-boron is the mixture of holmium chloride, neodymium chloride, gadolinium chloride, dysprosium chloride and samarium trichloride, and described rare earth-iron-boron is composed of the following components:
In the present embodiment, the thickness of photosensitive layer is 5 microns.
In the present embodiment, the alundum (Al2O3) that ceramic matrix is more than 93% by purity is prepared from.
The invention also discloses a kind of manufacture method of above-mentioned photo resistance, be described in further detail below in conjunction with the manufacture method of embodiment to photo resistance of the present invention.
Embodiment one: a kind of manufacture method of photo resistance, comprises the following steps:
1. ceramic matrix is prepared;
2. photosensitive solution is prepared:
2.-1 photosensitive layer mixture is obtained after being mixed by each raw material according to following proportioning configuration photosensitive layer raw material:
Rare earth-iron-boron is a kind of in holmium chloride, neodymium chloride, gadolinium chloride, dysprosium chloride and samarium trichloride or the mixture for two or more;
2.-2 to be dissolved in ionized water by photosensitive layer mixture and to obtain photosensitive solution, wherein in photosensitive solution, the percentage by weight of photosensitive layer mixture is 30%, and the percentage by weight of ionized water is 70%;
3. by the surface of photosensitive solution spraying at ceramic matrix, photosensitive layer is formed;
4. after the ceramic matrix after spraying being left standstill 10-15 minute at normal temperatures and pressures, then sinter 15 minutes under 380-1300 DEG C of high temperature, obtain photo resistance main body.
5. two electrodes are arranged on photo resistance main body two ends, obtain photo resistance.
Embodiment two: a kind of manufacture method of photo resistance, comprises the following steps:
1. ceramic matrix is prepared;
2. photosensitive solution is prepared:
2.-1 photosensitive layer mixture is obtained after being mixed by each raw material according to following proportioning configuration photosensitive layer raw material:
Rare earth-iron-boron is a kind of in holmium chloride, neodymium chloride, gadolinium chloride, dysprosium chloride and samarium trichloride or the mixture for two or more;
2.-2 to be dissolved in ionized water by photosensitive layer mixture and to obtain photosensitive solution, wherein in photosensitive solution, the percentage by weight of photosensitive layer mixture is 30%, and the percentage by weight of ionized water is 70%;
3. by the surface of photosensitive solution spraying at ceramic matrix, photosensitive layer is formed;
4. after the ceramic matrix after spraying being left standstill 10-15 minute at normal temperatures and pressures, then sinter 15 minutes under 380-1300 DEG C of high temperature, obtain photo resistance main body.
5. two electrodes are arranged on photo resistance main body two ends, obtain photo resistance.
In the present embodiment, rare earth-iron-boron is the mixture of holmium chloride, neodymium chloride, gadolinium chloride, dysprosium chloride and samarium trichloride, and described rare earth-iron-boron is composed of the following components:
In the present embodiment, step 4. after, step 5. before also comprise and be coated with the step of separator, the step being coated with separator is: at the surface spraying separator of photosensitive layer, the material of separator is epoxy resin.
In the present embodiment, step 3. in photosensitive solution is repeatedly sprayed on the surface of ceramic matrix, spraying number of times is 3-4 time, and the thickness of photosensitive layer is 5 microns.
In the present embodiment, the alundum (Al2O3) that ceramic matrix is more than 93% by purity is prepared from.
Embodiment three: a kind of manufacture method of photo resistance, comprises the following steps:
1. ceramic matrix is prepared;
2. photosensitive solution is prepared:
2.-1 photosensitive layer mixture is obtained after being mixed by each raw material according to following proportioning configuration photosensitive layer raw material:
Rare earth-iron-boron is a kind of in holmium chloride, neodymium chloride, gadolinium chloride, dysprosium chloride and samarium trichloride or the mixture for two or more;
2.-2 to be dissolved in ionized water by photosensitive layer mixture and to obtain photosensitive solution, wherein in photosensitive solution, the percentage by weight of photosensitive layer mixture is 30%, and the percentage by weight of ionized water is 70%;
3. by the surface of photosensitive solution spraying at ceramic matrix, photosensitive layer is formed;
4. after the ceramic matrix after spraying being left standstill 10-15 minute at normal temperatures and pressures, then sinter 15 minutes under 380-1300 DEG C of high temperature, obtain photo resistance main body.
5. two electrodes are arranged on photo resistance main body two ends, obtain photo resistance.
In the present embodiment, rare earth-iron-boron is the mixture of holmium chloride, neodymium chloride, gadolinium chloride, dysprosium chloride and samarium trichloride, and described rare earth-iron-boron is composed of the following components:
In the present embodiment, step 4. after, step 5. before also comprise and be coated with the step of separator, the step being coated with separator is: at the surface spraying separator of photosensitive layer, the material of separator is epoxy resin.
In the present embodiment, step 3. in photosensitive solution is repeatedly sprayed on the surface of ceramic matrix, spraying number of times is 3-4 time, and the thickness of photosensitive layer is 2 microns.
In the present embodiment, the alundum (Al2O3) that ceramic matrix is more than 93% by purity is prepared from.
Embodiment four: a kind of manufacture method of photo resistance, comprises the following steps:
1. ceramic matrix is prepared;
2. photosensitive solution is prepared:
2.-1 photosensitive layer mixture is obtained after being mixed by each raw material according to following proportioning configuration photosensitive layer raw material:
Rare earth-iron-boron is a kind of in holmium chloride, neodymium chloride, gadolinium chloride, dysprosium chloride and samarium trichloride or the mixture for two or more;
2.-2 to be dissolved in ionized water by photosensitive layer mixture and to obtain photosensitive solution, wherein in photosensitive solution, the percentage by weight of photosensitive layer mixture is 30%, and the percentage by weight of ionized water is 70%;
3. by the surface of photosensitive solution spraying at ceramic matrix, photosensitive layer is formed;
4. after the ceramic matrix after spraying being left standstill 10-15 minute at normal temperatures and pressures, then sinter 15 minutes under 380-1300 DEG C of high temperature, obtain photo resistance main body.
5. two electrodes are arranged on photo resistance main body two ends, obtain photo resistance.
In the present embodiment, rare earth-iron-boron is the mixture of holmium chloride, neodymium chloride, gadolinium chloride, dysprosium chloride and samarium trichloride, and described rare earth-iron-boron is composed of the following components:
In the present embodiment, step 4. after, step 5. before also comprise and be coated with the step of separator, the step being coated with separator is: at the surface spraying separator of photosensitive layer, the material of separator is epoxy resin.
In the present embodiment, step 3. in photosensitive solution is repeatedly sprayed on the surface of ceramic matrix, spraying number of times is 3-4 time, and the thickness of photosensitive layer is 2 microns.
In the present embodiment, the alundum (Al2O3) that ceramic matrix is more than 93% by purity is prepared from.
Embodiment five: a kind of manufacture method of photo resistance, comprises the following steps:
1. ceramic matrix is prepared;
2. photosensitive solution is prepared:
2.-1 photosensitive layer mixture is obtained after being mixed by each raw material according to following proportioning configuration photosensitive layer raw material:
Rare earth-iron-boron is a kind of in holmium chloride, neodymium chloride, gadolinium chloride, dysprosium chloride and samarium trichloride or the mixture for two or more;
2.-2 to be dissolved in ionized water by photosensitive layer mixture and to obtain photosensitive solution, wherein in photosensitive solution, the percentage by weight of photosensitive layer mixture is 30%, and the percentage by weight of ionized water is 70%;
3. by the surface of photosensitive solution spraying at ceramic matrix, photosensitive layer is formed;
4. after the ceramic matrix after spraying being left standstill 10-15 minute at normal temperatures and pressures, then sinter 15 minutes under 380-1300 DEG C of high temperature, obtain photo resistance main body.
5. two electrodes are arranged on photo resistance main body two ends, obtain photo resistance.
In the present embodiment, rare earth-iron-boron is the mixture of holmium chloride, neodymium chloride, gadolinium chloride, dysprosium chloride and samarium trichloride, and described rare earth-iron-boron is composed of the following components:
In the present embodiment, step 4. after, step 5. before also comprise and be coated with the step of separator, the step being coated with separator is: at the surface spraying separator of photosensitive layer, the material of separator is epoxy resin.
In the present embodiment, step 3. in photosensitive solution is repeatedly sprayed on the surface of ceramic matrix, spraying number of times is 3-4 time, and the thickness of photosensitive layer is 5 microns.The alundum (Al2O3) that in the present embodiment, ceramic matrix is more than 93% by purity is prepared from.
Burn-in test is carried out in the photo resistance adopting manufacture method of the present invention to make and the photo resistance adopting the method for prior art to make, under 25 DEG C of normal temperature after aging 10 days, add 100V, 150V, 200V voltage respectively, measure unglazed under dark resistance and 100Lux illumination penetrate the light resistance after 10 seconds, both the performance test results tables of comparisons are as shown in table 1 below:
Table 1
Data in analytical table 1 are known, from data analysis in table, the photo resistance that the photo resistance that manufacture method of the present invention makes makes relative to the manufacture method of prior art, its sensitivity improves 50%, and aging rear stability is high, percent defective drops to lower than 5% by more than 15% or 15%.Except sensitivity, stability, other performance of photo resistance is uninfluenced.
Claims (9)
1. a photo resistance, comprise ceramic matrix, photosensitive layer and two electrodes, described photosensitive layer is coated on described ceramic matrix surface, described photosensitive layer and described ceramic matrix form photo resistance main body, two electrodes are arranged on the two ends of described photo resistance main body respectively, it is characterized in that described photosensitive layer is composed of the following components:
Described rare earth-iron-boron is a kind of in holmium chloride, neodymium chloride, gadolinium chloride, dysprosium chloride and samarium trichloride or the mixture for two or more.
2. a kind of visible ray photo resistance according to claim 1, it is characterized in that rare earth-iron-boron is the mixture of holmium chloride, neodymium chloride, gadolinium chloride, dysprosium chloride and samarium trichloride, described rare earth-iron-boron is composed of the following components:
3. a kind of photo resistance according to claim 1, is characterized in that the thickness of described photosensitive layer is 2-5 micron.
4. a kind of photo resistance according to claim 1, is characterized in that the alundum (Al2O3) that described ceramic matrix is more than 93% by purity is prepared from.
5. a manufacture method for a kind of photo resistance according to claim 1, is characterized in that comprising the following steps:
1. ceramic matrix is prepared;
2. photosensitive solution is prepared:
2.-1 photosensitive layer mixture is obtained after being mixed by each raw material according to following proportioning configuration photosensitive layer raw material:
Described rare earth-iron-boron is a kind of in holmium chloride, neodymium chloride, gadolinium chloride, dysprosium chloride and samarium trichloride or the mixture for two or more;
2.-2 to be dissolved in ionized water by photosensitive layer mixture and to obtain photosensitive solution, wherein in photosensitive solution, the percentage by weight of photosensitive layer mixture is 30%, and the percentage by weight of ionized water is 70%;
3. by the surface of photosensitive solution spraying at ceramic matrix, photosensitive layer is formed;
4. after the ceramic matrix after spraying being left standstill 10-15 minute at normal temperatures and pressures, then sinter 15 minutes under 380-1300 DEG C of high temperature, obtain photo resistance main body.
5. two electrodes are arranged on photo resistance main body two ends, obtain photo resistance.
6. the manufacture method of a kind of visible ray photo resistance according to claim 5, it is characterized in that rare earth-iron-boron is the mixture of holmium chloride, neodymium chloride, gadolinium chloride, dysprosium chloride and samarium trichloride, described rare earth-iron-boron is composed of the following components:
7. the manufacture method of a kind of photo resistance according to claim 5, after it is characterized in that described step 4., 5. described step also comprises the step being coated with separator before, the step of described painting separator is: at the surface spraying separator of photosensitive layer, and the material of separator is epoxy resin.
8. the manufacture method of a kind of photo resistance according to claim 5, is characterized in that the surface during described step 3., photosensitive solution being repeatedly sprayed on ceramic matrix, and spraying number of times is 3-4 time, and the thickness of described photosensitive layer is 2-5 micron.
9. the manufacture method of a kind of photo resistance according to claim 5, is characterized in that the alundum (Al2O3) that described ceramic matrix is more than 93% by purity is prepared from.
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106784160A (en) * | 2017-01-16 | 2017-05-31 | 南阳师范学院 | Prepare the light-sensitive material of broad band photo resistance and the preparation method of the photo resistance |
| CN106784065A (en) * | 2017-01-16 | 2017-05-31 | 南阳师范学院 | Light-sensitive material for preparing low cost wide bands of a spectrum photo resistance |
| CN106784066A (en) * | 2017-01-16 | 2017-05-31 | 南阳师范学院 | Prepare the light-sensitive material of rare earth doped broad band photo resistance |
| CN106816489A (en) * | 2017-02-28 | 2017-06-09 | 安徽拓吉泰新型陶瓷科技有限公司 | A kind of light sensitive resistance ceramics and preparation method thereof |
| CN106847953A (en) * | 2017-01-16 | 2017-06-13 | 南阳师范学院 | Light-sensitive material for preparing the photo resistance of Old plant ultraviolet-visible |
| CN106847995A (en) * | 2017-01-16 | 2017-06-13 | 南阳师范学院 | Light-sensitive material for preparing the photo resistance of response ultraviolet-visible |
| CN106847994A (en) * | 2017-01-16 | 2017-06-13 | 南阳师范学院 | Light-sensitive material for preparing the photo resistance of low cost response ultraviolet-visible |
| CN106876505A (en) * | 2017-01-16 | 2017-06-20 | 南阳师范学院 | Light-sensitive material for preparing high sensitivity broad band photo resistance |
| CN106876506A (en) * | 2017-01-16 | 2017-06-20 | 南阳师范学院 | Light-sensitive material for preparing the photo resistance of response ultraviolet-visible |
| CN108711585A (en) * | 2017-03-22 | 2018-10-26 | 合肥仁德电子科技有限公司 | A method of improving the photocatalysis performance of photo resistance |
| CN108892484A (en) * | 2018-06-27 | 2018-11-27 | 合肥尚强电气科技有限公司 | Photosensitive resistor with improved sensitivity |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106784160A (en) * | 2017-01-16 | 2017-05-31 | 南阳师范学院 | Prepare the light-sensitive material of broad band photo resistance and the preparation method of the photo resistance |
| CN106784065A (en) * | 2017-01-16 | 2017-05-31 | 南阳师范学院 | Light-sensitive material for preparing low cost wide bands of a spectrum photo resistance |
| CN106784066A (en) * | 2017-01-16 | 2017-05-31 | 南阳师范学院 | Prepare the light-sensitive material of rare earth doped broad band photo resistance |
| CN106847953A (en) * | 2017-01-16 | 2017-06-13 | 南阳师范学院 | Light-sensitive material for preparing the photo resistance of Old plant ultraviolet-visible |
| CN106847995A (en) * | 2017-01-16 | 2017-06-13 | 南阳师范学院 | Light-sensitive material for preparing the photo resistance of response ultraviolet-visible |
| CN106847994A (en) * | 2017-01-16 | 2017-06-13 | 南阳师范学院 | Light-sensitive material for preparing the photo resistance of low cost response ultraviolet-visible |
| CN106876505A (en) * | 2017-01-16 | 2017-06-20 | 南阳师范学院 | Light-sensitive material for preparing high sensitivity broad band photo resistance |
| CN106876506A (en) * | 2017-01-16 | 2017-06-20 | 南阳师范学院 | Light-sensitive material for preparing the photo resistance of response ultraviolet-visible |
| CN106816489A (en) * | 2017-02-28 | 2017-06-09 | 安徽拓吉泰新型陶瓷科技有限公司 | A kind of light sensitive resistance ceramics and preparation method thereof |
| CN108711585A (en) * | 2017-03-22 | 2018-10-26 | 合肥仁德电子科技有限公司 | A method of improving the photocatalysis performance of photo resistance |
| CN108892484A (en) * | 2018-06-27 | 2018-11-27 | 合肥尚强电气科技有限公司 | Photosensitive resistor with improved sensitivity |
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