CN106847995A - Light-sensitive material for preparing the photo resistance of response ultraviolet-visible - Google Patents
Light-sensitive material for preparing the photo resistance of response ultraviolet-visible Download PDFInfo
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- CN106847995A CN106847995A CN201710028719.XA CN201710028719A CN106847995A CN 106847995 A CN106847995 A CN 106847995A CN 201710028719 A CN201710028719 A CN 201710028719A CN 106847995 A CN106847995 A CN 106847995A
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- 230000004044 response Effects 0.000 title claims abstract description 84
- 239000000463 material Substances 0.000 title claims abstract description 46
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 23
- 150000002910 rare earth metals Chemical class 0.000 claims abstract description 17
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910002651 NO3 Inorganic materials 0.000 claims abstract description 11
- 239000000203 mixture Substances 0.000 claims description 44
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 32
- 239000000919 ceramic Substances 0.000 claims description 22
- 239000011159 matrix material Substances 0.000 claims description 21
- 238000002360 preparation method Methods 0.000 claims description 13
- 238000005507 spraying Methods 0.000 claims description 9
- 238000000926 separation method Methods 0.000 claims description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims description 6
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 4
- 229910052773 Promethium Inorganic materials 0.000 claims description 4
- HSJPMRKMPBAUAU-UHFFFAOYSA-N cerium(3+);trinitrate Chemical compound [Ce+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O HSJPMRKMPBAUAU-UHFFFAOYSA-N 0.000 claims description 4
- GAGGCOKRLXYWIV-UHFFFAOYSA-N europium(3+);trinitrate Chemical compound [Eu+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O GAGGCOKRLXYWIV-UHFFFAOYSA-N 0.000 claims description 4
- FYDKNKUEBJQCCN-UHFFFAOYSA-N lanthanum(3+);trinitrate Chemical compound [La+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O FYDKNKUEBJQCCN-UHFFFAOYSA-N 0.000 claims description 4
- CFYGEIAZMVFFDE-UHFFFAOYSA-N neodymium(3+);trinitrate Chemical compound [Nd+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CFYGEIAZMVFFDE-UHFFFAOYSA-N 0.000 claims description 4
- 229910017604 nitric acid Inorganic materials 0.000 claims description 4
- YWECOPREQNXXBZ-UHFFFAOYSA-N praseodymium(3+);trinitrate Chemical compound [Pr+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O YWECOPREQNXXBZ-UHFFFAOYSA-N 0.000 claims description 4
- VQMWBBYLQSCNPO-UHFFFAOYSA-N promethium atom Chemical compound [Pm] VQMWBBYLQSCNPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 3
- 239000007921 spray Substances 0.000 claims description 2
- 238000002955 isolation Methods 0.000 claims 1
- 229910052573 porcelain Inorganic materials 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 13
- -1 rare earth nitrate Chemical class 0.000 abstract description 6
- 230000008901 benefit Effects 0.000 abstract description 4
- 230000002950 deficient Effects 0.000 abstract description 4
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 2
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 101100220616 Caenorhabditis elegans chk-2 gene Proteins 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000013332 literature search Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
- H01L31/02966—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe including ternary compounds, e.g. HgCdTe
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
- H01L31/02963—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe characterised by the doping material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1836—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The invention discloses the light-sensitive material of the photo resistance for preparing response ultraviolet-visible, by the rare earth nitrades that mass percent is 1% that adulterated in ultraviolet-visible response photo resistance material C dSeS, CdSe, CdS, ensure its stability while improving ultraviolet-visible response photo resistance sensitivity, simultaneously because rare earth nitrades content is low and is light rare earth nitrate, cost impact to ultraviolet-visible response photo resistance is smaller, has the advantages that sensitivity is high, percent defective is low.
Description
Technical field
The present invention relates to photo resistance technical field, in particular it relates to be used to prepare the photosensitive electricity of response ultraviolet-visible
The light-sensitive material of resistance.
Background technology
Photoelectric Detection can be widely used in the ultraviolet-visible response photo resistance that visible ray and black light are responded
Control system, such as ultraviolet detector, imaging-type UV warming and ultraviolet guidance etc..At present, the photosensitive electricity of ultraviolet-visible response
Resistance is generally made up of the contact conductor of ultraviolet-visible response photosensitive material layer Electricity Federation two for being attached to ceramic matrix surface, photosensitive electricity
Resistance material plays a decisive role to the performance of ultraviolet-visible response photo resistance.Existing ultraviolet-visible response photo resistance material
Material is more to mix ternary CdSeS quantum dots by CdS, CdSe mixture sensitive to visible ray, using ternary CdSeS quantum
The quantum confined effect of point produces blue spectral shift, spectral response band spread to black light spectrum, to wavelength in 280 nm
It is sensitive to the photoresponse between 670 nm.But, the problem that existing ultraviolet-visible response photo resistance material is primarily present it
One is：Sensitivity is low.It is main by adding CuCl both at home and abroad2Material improves the sensitive of ultraviolet-visible response photo resistance
Degree.Although material improves the sensitivity of broad band photo resistance to a certain degree, the CuCl for introducing2Because copper ion can be one
Valence state is converted between valency and divalence, the stability of ultraviolet-visible response photo resistance is have impact on, causes percent defective high, turn into
One step improves the problem of broad band photo resistance performance.Therefore need to provide that a kind of sensitivity is high, that stability is strong is ultraviolet
Visible light-responded photo resistance and preparation method thereof, to meet the photoelectrical examination control system to ultraviolet-visible response photo resistance
Double items requirement of sensitivity and stability.
By literature search, do not find and the rear-earth-doped ultraviolet-visible response photo resistance of technical solution of the present invention identical
And preparation method thereof relevant open report.
The content of the invention
It is an object of the present invention to regarding to the issue above, propose to respond the photo resistance of ultraviolet-visible for preparing
Light-sensitive material and the photo resistance preparation method, to meet the photoelectrical examination control system to ultraviolet-visible response photo resistance spirit
Double items requirement of sensitivity and stability.
To achieve the above object, the technical solution adopted by the present invention is：Photosensitive electricity for preparing response ultraviolet-visible
The light-sensitive material of resistance, the light-sensitive material by the photosensitive solution spraying of ultraviolet-visible response the ceramic matrix of photo resistance table
Face is formed, and the photosensitive solution of ultraviolet-visible response includes mixture and ionized water, and the mixture is by following weight percent
The each group of ratio is grouped into：
CdSeS 35%-55%, CdSe 25%-45%, CdS 9%-29%, balance of rare earth nitrades；
Mixture is dissolved in ionized water and obtains the photosensitive solution of ultraviolet-visible response, the ultraviolet-visible response is photosensitive molten
Mixture is with the mass percent of ionized water in liquid, mixture 25%-45%, ionized water 55%-75%.
Further, the rare earth nitrades be lanthanum nitrate, cerous nitrate, praseodymium nitrate, neodymium nitrate, nitric acid promethium, samaric nitrate or
Any one in europium nitrate.
Further, the percentage by weight CdSeS 45% of the mixture each component, CdSe 35%, CdS 19%, rare earth
Nitrate 1%；
Mixture is with the mass percent of ionized water in the photosensitive solution of ultraviolet-visible response, mixture 35%, ionized water
65%。
The preparation method of the photo resistance of ultraviolet-visible can be responded, is comprised the following steps：
Step 1：Prepare ceramic matrix；
Step 2：The configuration photosensitive solution of inexpensive ultraviolet-visible response；
Step 3：By the photosensitive solution spraying of inexpensive ultraviolet-visible response on the surface of ceramic matrix, formation low cost is ultraviolet can
See photoresponse photosensitive material layer；
Step 4：After ceramic matrix after step 3 is sprayed stands 10-30 minutes, baking in 900 DEG C of -1100 DEG C of constant temperature ovens is put into
It is roasting 10-30 minutes；
Step 5：Two electrodes are arranged on the inexpensive ultraviolet-visible response photosensitive material layer two ends that step 4 is formed, are obtained
Inexpensive ultraviolet-visible response photo resistance main body；
Step 6：Separation layer is sprayed in inexpensive ultraviolet-visible response photo resistance body surfaces, inexpensive UV, visible light is obtained
Photoresponse photo resistance main body.
Further, in step 2, the photosensitive solution of ultraviolet-visible response includes mixture and ionized water, the mixture
It is grouped into by each group of following percentage by weight：
CdSeS 35%-55%, CdSe 25%-45%, CdS 9%-29%, balance of rare earth nitrades；
Mixture is dissolved in ionized water and obtains the photosensitive solution of ultraviolet-visible response, the ultraviolet-visible response is photosensitive molten
Mixture is with the mass percent of ionized water in liquid, mixture 25%-45%, ionized water 55%-75%.Further, the step
After rapid 4 specifically, ceramic matrix after step 3 is sprayed stands 20 minutes, it is put into 600 DEG C of constant temperature ovens and toasts 20 minutes.
Further, the ceramic matrix by purity by more than 90% alundum (Al2O3) material is made.
Further, step 3 by step S2 ultraviolet-visible response photosensitive material solutions specifically, be sprayed on ceramic matrix
Surface, sprays 5 times, and the inexpensive ultraviolet-visible response photosensitive material layer thickness is 6 microns.
Further, step 6 is specifically, using epoxy resin in inexpensive ultraviolet-visible response photo resistance body table
Face, forms separation layer, and the separation layer thickness is 4 microns.
Further, the percentage by weight CdSeS 45% of the mixture each component, CdSe 35%, CdS 19%, rare earth
Nitrate 1%；
Mixture is with the mass percent of ionized water in the photosensitive solution of ultraviolet-visible response, mixture 35%, ionized water
65%。
The light-sensitive material for preparing the photo resistance that can respond ultraviolet-visible of various embodiments of the present invention and this is photosensitive
Resistance preparation method, be by the doping mass percent in ultraviolet-visible response photo resistance material C dSeS, CdSe, CdS
1% rare earth nitrades, ensure its stability, simultaneously because dilute while improving ultraviolet-visible response photo resistance sensitivity
Native nitrate content is low and is light rare earth nitrate, and the cost impact to ultraviolet-visible response photo resistance is smaller, has
The advantage that sensitivity is high, percent defective is low.
Other features and advantages of the present invention will be illustrated in the following description, also, the partly change from specification
Obtain it is clear that or being understood by implementing the present invention.
Below by drawings and Examples, technical scheme is described in further detail.
Brief description of the drawings
Accompanying drawing is used for providing a further understanding of the present invention, and constitutes a part for specification, with reality of the invention
Applying example is used to explain the present invention together, is not construed as limiting the invention.In the accompanying drawings：
Fig. 1 is the photo resistance structure chart described in the embodiment of the present invention.
With reference to accompanying drawing, reference is as follows in the embodiment of the present invention：
1- ceramic matrixs；2- photosensitive material layers；3- electrodes.
Specific embodiment
The preferred embodiments of the present invention are illustrated below in conjunction with accompanying drawing, it will be appreciated that preferred reality described herein
Apply example to be merely to illustrate and explain the present invention, be not intended to limit the present invention.
With reference to the structure of Fig. 1, specifically, the light-sensitive material of the photo resistance for preparing response ultraviolet-visible is described
Light-sensitive material is formed by the photosensitive solution spraying of inexpensive ultraviolet-visible response on the surface of the ceramic matrix of photo resistance, described
Light-sensitive material is formed by the photosensitive solution spraying of ultraviolet-visible response on the surface of the ceramic matrix of photo resistance, it is described it is ultraviolet can
See that the photosensitive solution of photoresponse includes mixture and ionized water, the mixture is grouped into by each group of following percentage by weight：
CdSeS 35%-55%, CdSe 25%-45%, CdS 9%-29%, balance of rare earth nitrades；
Mixture is dissolved in ionized water and obtains the photosensitive solution of ultraviolet-visible response, the ultraviolet-visible response is photosensitive molten
Mixture is with the mass percent of ionized water in liquid, mixture 25%-45%, ionized water 55%-75%.
The rare earth nitrades are in lanthanum nitrate, cerous nitrate, praseodymium nitrate, neodymium nitrate, nitric acid promethium, samaric nitrate or europium nitrate
Any one.
The percentage by weight CdSeS 45% of the mixture each component, CdSe 35%, CdS 19%, rare earth nitrades 1%；
Mixture is with the mass percent of ionized water in the photosensitive solution of ultraviolet-visible response, mixture 35%, ionized water
65%。
Methods described includes following operating procedure：
S1, prepares ceramic matrix；
S2, configures the rear-earth-doped photosensitive solution of ultraviolet-visible response；
S3, by the photosensitive solution spraying of rear-earth-doped ultraviolet-visible response on the surface of ceramic matrix, forms rear-earth-doped ultraviolet
Visible light-responded photosensitive material layer；
S4, after the ceramic matrix after spraying is stood into 20 minutes, is put into 600 DEG C of constant temperature ovens and toasts 20 minutes；
S5, two electrodes is arranged on and forms rear-earth-doped ultraviolet-visible response photosensitive material layer two ends, obtains rear-earth-doped
Ultraviolet-visible response photo resistance main body.
S6, separation layer is sprayed in rear-earth-doped ultraviolet-visible response photo resistance body surfaces, obtains rear-earth-doped purple
Outer visible light-responded photo resistance.
Preferably, the step S1 is specially：With purity for needed for prepared by more than 90% alundum (Al2O3) material shape
Ceramic matrix.
Preferably, the step S2 is specially：
After first, being well mixed according to the rear-earth-doped photosensitive solution of ultraviolet-visible response of following proportioning configuration and by each raw material
To rear-earth-doped ultraviolet-visible response photosensitive material layer mixture：
CdSeS 45%（Percentage by weight）
CdSe 35%（Percentage by weight）
CdS 19%（Percentage by weight）
Rare earth nitrades 1%（Percentage by weight）
Described rare earth nitrades are in lanthanum nitrate, cerous nitrate, praseodymium nitrate, neodymium nitrate, nitric acid promethium, samaric nitrate and europium nitrate
Kind
Then, rear-earth-doped ultraviolet-visible response photosensitive material layer mixture is dissolved in and rear-earth-doped purple is obtained in ionized water
Outer visible light-responded photosensitive material solution, wherein in rear-earth-doped ultraviolet-visible response photosensitive material solution, rear-earth-doped purple
The mass percent of outer visible light-responded photosensitive material layer mixture is 35%, and the mass percent of ionized water is 65%.
Preferably, the step S3 is specially：By the rear-earth-doped ultraviolet-visible response light-sensitive material obtained by step S2
Solution spraying is sprayed 5 times on ceramic matrix surface, and the rear-earth-doped ultraviolet-visible response photosensitive material layer thickness is 6 micro-
Rice.
Preferably, the step S6 is specially：Epoxy resin is rung in the rear-earth-doped ultraviolet-visible obtained by step S2
Photo resistance body surfaces are answered, separation layer is formed, the separation layer thickness is 4 microns.
When the value in above-mentioned span, the resistance sensitivity prepared using the above-mentioned percentage for being given is optimal
's.And other numerical value in scope（Including endpoint value）Sensitivity be only second to concrete numerical value disclosed above.
Practical application shows：
The present invention, is 1% by the doping mass percent in ultraviolet-visible response photo resistance material C dSeS, CdSe, CdS
Rare earth nitrades, improve ultraviolet-visible response photo resistance sensitivity while ensure its stability, simultaneously because rare earth
Nitrate content is low and is light rare earth nitrate, and the cost impact to ultraviolet-visible response photo resistance is smaller, with spirit
The advantage that sensitivity is high, percent defective is low.
Finally it should be noted that：The preferred embodiments of the present invention are the foregoing is only, are not intended to limit the invention,
Although being described in detail to the present invention with reference to the foregoing embodiments, for a person skilled in the art, it still may be used
Modified with to the technical scheme described in foregoing embodiments, or equivalent is carried out to which part technical characteristic.
All any modification, equivalent substitution and improvements within the spirit and principles in the present invention, made etc., should be included in of the invention
Within protection domain.
Claims (10)
1. it is used to prepare the light-sensitive material of the photo resistance for responding ultraviolet-visible, it is characterised in that the light-sensitive material is by purple
The surface of outer ceramic matrix of the visible light-responded photosensitive solution spraying in photo resistance is formed, and the ultraviolet-visible response is photosensitive
Solution includes mixture and ionized water, and the mixture is grouped into by each group of following percentage by weight：
CdSeS 35%-55%, CdSe 25%-45%, CdS 9%-29%, balance of rare earth nitrades；
Mixture is dissolved in ionized water and obtains the photosensitive solution of ultraviolet-visible response, the ultraviolet-visible response is photosensitive molten
Mixture is with the mass percent of ionized water in liquid, mixture 25%-45%, ionized water 55%-75%.
2. preparation according to claim 1 responds the light-sensitive material of the photo resistance of ultraviolet-visible, it is characterised in that institute
It is any one in lanthanum nitrate, cerous nitrate, praseodymium nitrate, neodymium nitrate, nitric acid promethium, samaric nitrate or europium nitrate to state rare earth nitrades.
3. the light-sensitive material for preparing the photo resistance of response ultraviolet-visible according to claim 2, its feature exists
In the percentage by weight CdSeS 45% of the mixture each component, CdSe 35%, CdS 19%, rare earth nitrades 1%；
Mixture is with the mass percent of ionized water in the photosensitive solution of ultraviolet-visible response, mixture 35%, ionized water
65%。
4. the preparation method of the photo resistance of ultraviolet-visible is responded, it is characterised in that comprised the following steps：
Step 1：Prepare ceramic matrix；
Step 2：The configuration photosensitive solution of ultraviolet-visible response；
Step 3：By the photosensitive solution spraying of ultraviolet-visible response on the surface of ceramic matrix, ultraviolet-visible response is formed photosensitive
Material layer；
Step 4：After ceramic matrix after step 3 is sprayed stands 10-30 minutes, baking in 500 DEG C of -700 DEG C of constant temperature ovens is put into
It is roasting 10-30 minutes；
Step 5：Two electrodes are arranged on the ultraviolet-visible response photosensitive material layer two ends that are formed of step 4, obtain it is ultraviolet can
See photoresponse photo resistance main body；
Step 6：Separation layer is sprayed in ultraviolet-visible response photo resistance body surfaces, the photosensitive electricity of ultraviolet-visible response is obtained
Resistance main body.
5. it is according to claim 4 response ultraviolet-visible photo resistance preparation method, it is characterised in that step 2
In, the photosensitive solution of ultraviolet-visible response include mixture and ionized water, the mixture by following percentage by weight each group
It is grouped into：
CdSeS 35%-55%, CdSe 25%-45%, CdS 9%-29%, balance of rare earth nitrades；
Mixture is dissolved in ionized water and obtains the photosensitive solution of ultraviolet-visible response, the ultraviolet-visible response is photosensitive molten
Mixture is with the mass percent of ionized water in liquid, mixture 25%-45%, ionized water 55%-75%.
6. it is according to claim 4 response ultraviolet-visible photo resistance preparation method, it is characterised in that the step
After rapid 4 specifically, ceramic matrix after step 3 is sprayed stands 20 minutes, it is put into 600 DEG C of constant temperature ovens and toasts 20 minutes.
7. it is according to claim 4 response ultraviolet-visible photo resistance preparation method, it is characterised in that the pottery
Porcelain basal body is by purity by more than 90% alundum (Al2O3) material is made.
8. it is according to claim 4 response ultraviolet-visible photo resistance preparation method, it is characterised in that step 3
Specifically, step S2 ultraviolet-visible response photosensitive material solutions are sprayed on into ceramic matrix surface, spray 5 times, it is described it is low into
This ultraviolet-visible response photosensitive material layer thickness is 6 microns.
9. it is according to claim 4 response ultraviolet-visible photo resistance preparation method, it is characterised in that step 6
Specifically, using epoxy resin in inexpensive ultraviolet-visible response photo resistance body surfaces, forming separation layer, the isolation
Thickness degree is 4 microns.
10. it is according to claim 5 response ultraviolet-visible photo resistance preparation method, it is characterised in that it is described
The percentage by weight CdSeS 45% of mixture each component, CdSe 35%, CdS 19%, rare earth nitrades 1%；
Mixture is with the mass percent of ionized water in the photosensitive solution of ultraviolet-visible response, mixture 35%, ionized water
65%。
Priority Applications (1)
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107256900A (en) * | 2017-06-27 | 2017-10-17 | 苏州楚博生物技术有限公司 | A kind of light-sensitive material for sensor |
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| CN102517024A (en) * | 2011-12-19 | 2012-06-27 | 武汉大学 | Method for water-phase microwave preparation of CdSeS quantum dots |
| CN105206700A (en) * | 2015-10-09 | 2015-12-30 | 南阳师范学院 | Visible light photosensitive resistor and manufacturing method thereof |
| CN105336798A (en) * | 2015-10-09 | 2016-02-17 | 南阳师范学院 | Photoresistor and manufacturing method thereof |
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| CN102517024A (en) * | 2011-12-19 | 2012-06-27 | 武汉大学 | Method for water-phase microwave preparation of CdSeS quantum dots |
| CN105206700A (en) * | 2015-10-09 | 2015-12-30 | 南阳师范学院 | Visible light photosensitive resistor and manufacturing method thereof |
| CN105336798A (en) * | 2015-10-09 | 2016-02-17 | 南阳师范学院 | Photoresistor and manufacturing method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107256900A (en) * | 2017-06-27 | 2017-10-17 | 苏州楚博生物技术有限公司 | A kind of light-sensitive material for sensor |
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