CN105336641B - The weighting calibration method of CMP terminal detecting systems - Google Patents
The weighting calibration method of CMP terminal detecting systems Download PDFInfo
- Publication number
- CN105336641B CN105336641B CN201410280249.2A CN201410280249A CN105336641B CN 105336641 B CN105336641 B CN 105336641B CN 201410280249 A CN201410280249 A CN 201410280249A CN 105336641 B CN105336641 B CN 105336641B
- Authority
- CN
- China
- Prior art keywords
- calibration
- preliminary
- terminal detecting
- process thickness
- weighting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
The present invention provides the weighting calibration method of CMP terminal detecting systems.According to a kind of calibration method of terminal detecting system of the present invention, including：Predetermined grinding scheme is performed on board to be calibrated, and monitoring indicatrix is obtained by its terminal detecting system；Indicatrix is monitored described in preliminary calibration, to obtain preliminary calibration parameter；And weighting calibration one or more preliminary calibration parameter, to obtain one or more final calibration parameters, the weighting calibration content includes：Increase board variation calibration factor F1, wherein F1=(the process thickness difference based on board difference)/(the process thickness variable quantity based on preliminary calibration Parameters variation).Present invention additionally comprises alternatively increase grinding-material variation calibration factor F2 and additional calibration factor F3 based on experience or other factorses (such as difference between defect, different processing procedures).
Description
Technical field
The present invention relates to the terminal detecting technology of cmp (CMP) technique, specifically, whole the present invention relates to CMP
The weighting calibration method of point detection system.
Background technology
In semiconductor fabrication process, cmp (CMP) is conventional global planarizartion technique.CMP is widely
For planarizing various metals and dielectric material on silicon chip, Miltilayer wiring structure is realized.Be difficult to for some by chemical agent or
The metal material of plasma etching, CMP are the important means for making metallic pattern, for example, in Damascus technics, CMP
It is used to grind copper product.
One key technology of CMP control, is how to determine grinding endpoint.Need to use appropriate terminal detecting
(End-Point Detection, EPD) technology accurately monitors the process of technique, and in time stops grinding to reduce pair
Crossing for underlying materials is ground.
A kind of traditional CMP system assesses the polishing time of product piece using gear control wafer grinding rate, is determined with this
CMP terminal time.This is a kind of relatively rough control technology.More advanced end-point detecting system is ground by detecting to characterize
The signal of the remaining thickness of material layer is ground, to determine grinding endpoint.
A type of end point determination is the end point determination based on signal intensity, and its principle is：Obtain sign and be ground layer
The monitoring signal of remaining thickness, when signal intensity crosses threshold value, then judge to have reached grinding endpoint.For example, what industry used
A kind of interval scan (iScan) scheme (typical detective curve is as shown in Figure 1), obtained and metal by electromagnetic induction principle
Thickness degree related electric signal, thus control the terminal of grinding technics.
Another type of end point determination is the end point determination based on window detection, and it is by capturing in monitoring curve more
It is obvious to change (transition for disclosing ground material layer) to determine grinding endpoint.A kind of for example, full scan that industry uses
(FullScan) scheme (typical detective curve is as shown in Figure 2), wafer surface is scanned by using scanning light beam, simultaneously
The luminous intensity reflected using Sensor monitoring through wafer surface, because metal level is different from the reflectivity on barrier layer, therefore can be with
The terminal of grinding technics is controlled according to reflected intensity.Specifically, when metal level is milled away a part, ground material
When thickness changes, change takes place in light reflected signal, and after being ground layer and being ground, reflected signal change eases up.
Therefore, by capturing the significant change twice of light reflected signal, you can judge chemical and mechanical grinding endpoint.
Prior art uses standard calibration methodology to each board.However, the performance between board is constantly present difference, together
When due to some nuances between the different batches of grinding-material used in CMP (lapping liquid, grinding pad etc.) can also influence EPD inspection
The accuracy of the monitoring of examining system.In addition, some CMPs are due to some intrinsic defects, it is not complete when detecting terminal
Produce a desired effect entirely, it is necessary to be artificially introduced grinding.Therefore, it is necessary to a kind of calibration method of more precise and high efficiency.
The content of the invention
The present invention proposes a kind of detection method of the terminal detecting system of CMP machine platform.The present invention treats calibration board first
The monitoring indicatrix provided carries out preliminary calibration, and obtaining preliminary calibration parameter (can take the calibration flow of standard to EPD systems
Carry out preliminary calibration；Or preliminary calibration can be carried out based on the standard feature curve that standard board provides, to monitor feature song
Line and standard feature Curve Matching).Then, the present invention is weighted calibration to one or more preliminary calibration parameters.Based on
In the terminal detecting system of window detection, the present invention is weighted calibration to gain G ain.Visited in the terminal based on signal intensity
In examining system, the present invention can be weighted calibration to gain G ain and compensation Offset.
The weighting calibration of the present invention considers one or more weighted factors：Board variation calibration factor F1, grinding-material are poor
Different calibration factor F2, the additional calibration factor F3 based on experience or other factorses (such as defect, different processing procedures between difference).Wherein,
According to being actually needed, calibration factor F2 and F3 are options.Therefore, according to the present invention, weighting calibration parameter=preliminary calibration ginseng
Number+F1+F2 (optional)+F3 (optional).
According to an aspect of the present invention, a kind of calibration method of the terminal detecting system of CMP machine platform is proposed, including：
Predetermined grinding scheme is performed on board to be calibrated, and monitoring indicatrix is obtained by its terminal detecting system；Preliminary calibration
The monitoring indicatrix, to obtain preliminary calibration parameter；And weighting calibration one or more preliminary calibration parameter, to obtain
One or more final calibration parameters, the weighting calibration include：Increase board variation calibration factor F1 to preliminary calibration parameter,
Wherein F1=(the process thickness difference based on board difference)/(the process thickness variable quantity based on preliminary calibration Parameters variation).
According to an aspect of the present invention, the weighting calibration also includes：It is poor to preliminary calibration parameter increase grinding-material
Different calibration factor F2, wherein F2=(the process thickness difference based on grinding-material difference)/(based on preliminary calibration Parameters variation
Process thickness variable quantity).
According to an aspect of the present invention, the weighting calibration also includes：To preliminary calibration parameter increase based on it is following because
One or more additional calibration factor F3 in element：Experience；Defect；And difference between different processing procedures.
According to an aspect of the present invention, the value of the additional calibration factor F3 is：0-2.
According to an aspect of the present invention, the additional calibration factor F3 introduces a certain amount of cross and ground.
According to an aspect of the present invention, the terminal detecting system is the terminal detecting system based on window detection.
According to an aspect of the present invention, weighting calibration one or more preliminary calibration parameter includes：Weighting calibration gain
Value.
According to an aspect of the present invention, the terminal detecting system is the terminal detecting system based on signal intensity.
According to an aspect of the present invention, weighting calibration one or more preliminary calibration parameter includes：Weighting calibration gain
Value；And weighting calibration offset.
According to an aspect of the present invention, the step of indicatrix is monitored described in preliminary calibration includes：Measured school
Quasi- flow is calibrated to the monitoring indicatrix.
According to an aspect of the present invention, the step of indicatrix is monitored described in preliminary calibration includes：On standard board
Predetermined grinding scheme is performed, and standard feature curve is obtained by its terminal detecting system；And based on standard feature curve come
Indicatrix is monitored described in preliminary calibration, to obtain preliminary calibration parameter, the preliminary calibration parameter makes the monitoring feature bent
Standard feature curve described in lines matching.
According to an aspect of the present invention, the process thickness based on preliminary calibration Parameters variation is obtained in the following manner to become
Change amount：Based on preliminary calibration parameter setting terminal detecting system；Predetermined grinding scheme is performed on board to be calibrated；In terminal
After detection system detects terminal and stops grinding, the first process thickness is measured；Adjust preliminary calibration one unit of parameter：It is based on
Preliminary calibration parameter setting terminal detecting system after adjustment；Predetermined grinding scheme is performed on board to be calibrated；In terminal
After detection system detects terminal and stops grinding, the second process thickness is measured；Compare the first process thickness and the second technique is thick
Degree, obtains the process thickness variable quantity based on preliminary calibration Parameters variation.
According to an aspect of the present invention, the technique that the process thickness difference based on board difference passes through bulk product
The statistical analysis of thickness obtains.
According to an aspect of the present invention, the process thickness difference based on grinding-material difference passes through bulk product
The statistical analysis of process thickness obtains.
The present invention is applied to the various terminal detecting systems of further calibration industry, includes but is not limited to, and is visited based on window
The terminal detecting system (such as total scanner system) of survey, based on signal intensity terminal detecting system (such as interval scan system,
Terminal detecting system based on electric current torque etc.).
Brief description of the drawings
For the above and other advantages and features of each embodiment that the present invention is furture elucidated, refer to the attached drawing is presented
The more specifically description of various embodiments of the present invention.It is appreciated that these accompanying drawings only describe the exemplary embodiments of the present invention, therefore
It is restriction on its scope to be not to be regarded as.
Fig. 1 shows the monitoring indicatrix of the terminal detecting system based on signal intensity according to prior art.
Fig. 2 shows the monitoring indicatrix of the terminal detecting system detected based on window according to prior art.
Fig. 3 shows the flow chart of terminal detecting system calibration method according to an embodiment of the invention.
Fig. 4 shows according to an embodiment of the invention, a kind of flow for the method that preliminary calibration is carried out to monitoring indicatrix
Figure.
Fig. 5 is shown according to an embodiment of the invention, and calibration is weighted to the terminal detecting system based on signal intensity
The flow chart of method.
Fig. 6 is shown according to an embodiment of the invention, and calibration is weighted to the terminal detecting system detected based on window
The flow chart of method.
Fig. 7 is shown according to an embodiment of the invention, is the flow for the method that Gain values/Offset values calculate calibration factor F1
Figure.
Fig. 8 is shown according to an embodiment of the invention, is the flow for the method that Gain values/Offset values calculate calibration factor F2
Figure.
Embodiment
Referring to the drawings, accompanying drawing shows that the specific of theme claimed can be put into practice by way of illustration following detailed description
Embodiment.Fully describe these embodiments in detail, put into practice so that those skilled in the art put into the theme.It is appreciated that can
The spirit and scope changed the position of each key element in each open embodiment or configured without departing from theme claimed.
Therefore, detailed description below does not have limiting meaning, and the scope of theme is only connected by the appended claims suitably explained
Defined with the four corner of the authorized equivalent of these claims.
Fig. 3 shows the flow chart of the terminal detecting system calibration method according to an embodiment of the invention according to the present invention.
The method of the present invention starts from step 301, performs predetermined grinding scheme on board to be calibrated (referred to hereinafter as the first board), and adopt
Predetermined terminal detecting algorithm is taken, (now amplifies and compensates without signal, i.e., so as to obtain preliminary monitoring indicatrix
Offset=0, Gain=1).As an example, 1 μm can be ground using the grinding scheme and fixed terminal detecting algorithm of fixation
Thick copper gear control wafer (copper dummy).In present embodiments, monitoring indicatrix can be, for example, directly
Or the curve that the material layer residual thickness being ground changes over time is symbolized indirectly.Can by the thickness rate of changing with time
To determine grinding rate, the significant changes of grinding rate disclose the transition of material layer, and then disclose appropriate grinding endpoint.Prison
It can also be any other indicatrix for disclosing material transition to control indicatrix.For example, because different materials have not to light
With reflectance factor, can obtain characterize reflectance spectrum indicatrix, and when reflectance spectrum discloses interference (due to
Caused by the interference of light at two kinds of material interfaces), determine grinding endpoint.Monitoring indicatrix is not limited to optical plan.For example, in base
In the terminal detecting of current of electric, monitoring indicatrix can be the curve that the magnitude of current of grinding head motor changes over time.Always
It, the present invention is applied to the various monitoring indicatrixes for being used to detect grinding endpoint used by this area.Therefore, the present invention not
Answer the limitation of the particular type of monitored indicatrix.
Then, in step 302, preliminary calibration is carried out to monitoring indicatrix, to obtain preliminary calibration parameter.It can use more
Kind of mode carries out preliminary calibration step 302.For example, the calibration flows of the various standards that industry used can be taken to carry out
Preliminary calibration.Fig. 4 is shown according to a kind of exemplary preliminary calibrating mode of the present invention：In step 401, held on standard board
Row and the predetermined grinding scheme of the identical of abovementioned steps 301 and terminal detecting algorithm, so as to obtain standard feature curve；Afterwards, exist
Step 402, preliminary calibration is carried out come the monitoring indicatrix to the first board based on standard feature curve, obtains preliminary calibration
Monitor indicatrix, and preliminary calibration parameter Calibrated Offset and Calibrated Gain, the two preliminary schools
Quasi- parameter may be such that the monitoring indicatrix of the first board is matched with the standard feature curve of standard board.For example, for based on
The terminal detecting system of signal intensity, preliminary calibration can be carried out by following algorithm：
Calibrated Gain=(minimum value of maximum-monitoring indicatrix of monitoring indicatrix)/(standard is special
Levy the minimum value of maximum-standard feature curve of curve)
Calibrated Offset=(minimum value of minimum value-standard feature curve of monitoring indicatrix) *
Calibrated Gain
Can the successive step monitoring feature songs come at the beginning of of Calibrated Gain and the Calibrate Offset based on preliminary calibration
Line.Specifically, gain Calibrated Gain are applied for initial monitoring indicatrix (the first beginning and end make signal amplification),
So as to adjust signal amplitude；Meanwhile offset is applied to initial monitoring indicatrix (the first beginning and end make signal compensation)
Calibrate Offset, make the curve in coordinate space appropriate upper and lower translation to add signal compensation amount.
It may be noted that above preliminary calibration algorithm is merely illustrative.In fact, it is any so that prison that industry can be used to have used
Control the algorithm of indicatrix matching standard feature curve.
Fig. 3 is returned to, can be to one after preliminary calibration parameter Calibrated Offset and Calibrated Gain is obtained
Individual or multiple preliminary calibration parameters are weighted calibration to obtain final calibration parameter.The content of weighting calibration includes：In step
303, for preliminary calibration parameter, increase board variation calibration factor F1.Calibration factor F1 is calibrated due to the property of the first board
The difference of the first board process thickness and target thickness (standard board processes thickness) caused by energy difference.F1 computational methods
It will describe in the figure 7 later.
Alternatively, the content of weighting calibration also includes：It is poor for preliminary calibration parameter, increase grinding-material in step 304
Different calibration factor F2 and/or additional calibration factor F3.Grinding-material variation calibration factor F2 is calibrated due to used in the first board
The difference of the first board process thickness and target thickness caused by the otherness of grinding-material.F2 computational methods will exist later
Described in Fig. 8.Additional calibration factor F3 is based on the factor such as difference, the spy in production practices between experience, defect, different processing procedures
Do not need and monitoring indicatrix is further artificially adjusted.For example, some existing CMPs are intrinsic due to it
Deficiency and desired thickness can not be ground to well, now by artificially added grinding (i.e. adjustment monitoring indicatrix, make
Terminal detecting is delayed), such case can be compensated for.
According to an embodiment of the invention, calibration factor F2 and F3 is optional calibration factor.For F2, if always
Using the grinding-material of same batch, or difference is minimum between the batch of grinding-material, then can ignore materials variances substantially, grind
Grind materials variances calibration factor F2=0.Equally, if CMP fully meets process requirements, it is not required to artificially compensate, adds
Calibration factor F3=0.On the other hand, difference is then nearly unavoidable between board, because more CMP tools are in use not
Have performance difference with can avoiding, therefore board variation calibration factor F1 is the necessary calibration item of the present invention.Therefore, according to this hair
Bright embodiment, weighting calibration parameter=preliminary calibration parameter+F1+F2 (optional)+F3 (optional).
As it was previously stated, in Fig. 3 step 302, obtain preliminary calibration parameter Calibrated Offset and
Calibrated Gain.But the two preliminary calibration parameters not will further weighting calibration.For based on signal intensity
Terminal detecting system, gain G ain and compensation Offset can influence triggering of the terminal detecting system to process endpoint, therefore, excellent
Selection of land, Calibrated Offset and Calibrated Gain the two parameters respectively will weighting calibration, such as step in Fig. 5
Shown in 501-502-503.On the other hand, for the terminal detecting system detected based on window, Offset values are for characteristic signal
Practical function can not be caught, what is worked is Gain values, therefore, only can be weighted calibration to Calibrated Gain, is such as schemed
In 6 shown in step 601-602.
Fig. 7 is shown according to an embodiment of the invention, is Gain values/Offset value computer platform variation calibration factors F1 stream
Cheng Tu.Method starts from 701, calculates based on the process thickness difference value a1 caused by the board difference of the first board.A1 can pass through
Statistical analysis is carried out to obtain to the process thickness of bulk product.Such statistical analysis can use technique service software (such as
Odyssey) obtain, can also be obtained by artificial or computer system statistics.Then, in step 702, Calibrated is made
Gain values (Calibrated Offset values) increase a unit (i.e. numerical value+1).Afterwards, in step 703, after adjustment
Calibrated Gain values (Calibrated Offset values), a CMP is run, obtain the increment b1 of process thickness.
Finally, in step 704, calibration factor F1, F1=a1/b1 are calculated.
Fig. 8 is shown according to an embodiment of the invention, is Gain values/Offset value computer platform variation calibration factors F2 stream
Cheng Tu.Method starts from 801, calculates based on the process thickness difference value a2 caused by the grinding-material difference of the first board.A2 is same
Sample can be by carrying out statistical analysis to obtain to the process thickness of bulk product.Then, in step 802, Calibrated is made
Gain values (Calibrated Offset values) increase a unit (i.e. numerical value+1).Afterwards, in step 803, after adjustment
Calibrated Gain values (Calibrated Offset values), a CMP is run, obtain the increment b2 of process thickness.
Finally, in step 804, calibration factor F2, F2=a2/b2 are calculated.
The foregoing describe some embodiments of the present invention.However, the present invention can be embodied as other concrete forms without carrying on the back
From its spirit or essential characteristics.Described embodiment should all be to be considered merely as illustrative and not restrictive in all respects.
For example, in Fig. 7 step 702, increase a unit for Gain values, but those skilled in the art are when it is understood that Gain values can
Increase arbitrary value, as long as after process thickness increment b1 is obtained, then divided by this arbitrary value.Therefore, the scope of the present invention
By appended claims rather than described above limit.Fall into all in the implication and scope of the equivalents of claims
Change is covered by the scope of claims.
Claims (14)
1. a kind of calibration method of the terminal detecting system of CMP machine platform, including：
Predetermined grinding scheme is performed on board to be calibrated, and monitoring indicatrix is obtained by its terminal detecting system；
Indicatrix is monitored described in preliminary calibration, to obtain preliminary calibration parameter；And
Weighting calibration one or more preliminary calibration parameter, to obtain one or more final calibration parameters,
The weighting calibration includes：Increase board variation calibration factor F1 to preliminary calibration parameter,
Wherein F1=(the process thickness difference based on board difference)/(the process thickness change based on preliminary calibration Parameters variation
Amount).
2. calibration method as claimed in claim 1, it is characterised in that the weighting calibration also includes：To preliminary calibration parameter
Increase grinding-material variation calibration factor F2, wherein F2=(the process thickness difference based on grinding-material difference)/(based on preliminary
The process thickness variable quantity of calibration parameter change).
3. method as claimed in claim 1 or 2, it is characterised in that the weighting calibration also includes：Increase to preliminary calibration parameter
Add based on one or more additional calibration factor F3 in following factor：
Experience；
Defect；And
Difference between different processing procedures.
4. method as claimed in claim 3, it is characterised in that the value of the additional calibration factor F3 is：0-2.
5. method as claimed in claim 3, it is characterised in that the additional calibration factor F3 introduce it is a certain amount of cross grinding with
Delay terminal detecting.
6. the method as described in claim 1, it is characterised in that the terminal detecting system is that the terminal based on window detection is visited
Examining system.
7. method as claimed in claim 6, it is characterised in that weighting calibration one or more preliminary calibration parameter includes：Add
Weigh correcting gain values.
8. the method as described in claim 1, it is characterised in that the terminal detecting system is that the terminal based on signal intensity is visited
Examining system.
9. method as claimed in claim 8, it is characterised in that weighting calibration one or more preliminary calibration parameter includes：
Weighting calibration yield value；And
Weighting calibration offset.
10. the method as described in claim 1, it is characterised in that the step of indicatrix is monitored described in preliminary calibration includes：
Measured calibration flow is calibrated to the monitoring indicatrix.
11. the method as described in claim 1, it is characterised in that the step of indicatrix is monitored described in preliminary calibration includes：
Predetermined grinding scheme is performed on standard board, and standard feature curve is obtained by its terminal detecting system；And
Indicatrix is monitored based on standard feature curve described in preliminary calibration, to obtain preliminary calibration parameter, the preliminary school
Quasi- parameter makes the monitoring indicatrix match the standard feature curve.
12. the method as described in claim 1, it is characterised in that obtain be based on preliminary calibration Parameters variation in the following manner
Process thickness variable quantity：
Based on preliminary calibration parameter setting terminal detecting system；
Predetermined grinding scheme is performed on board to be calibrated；
After terminal detecting system detects terminal and stops grinding, the first process thickness is measured；
Adjust preliminary calibration one unit of parameter：
Based on the preliminary calibration parameter setting terminal detecting system after adjustment；
Predetermined grinding scheme is performed on board to be calibrated；
After terminal detecting system detects terminal and stops grinding, the second process thickness is measured；
Compare the first process thickness and the second process thickness, obtain the process thickness variable quantity based on preliminary calibration Parameters variation.
13. the method as described in claim 1, it is characterised in that the process thickness difference based on board difference passes through big
The statistical analysis of the process thickness of ancestor's product obtains.
14. method as claimed in claim 2, it is characterised in that the process thickness difference based on grinding-material difference is led to
The statistical analysis for crossing the process thickness of bulk product obtains.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410280249.2A CN105336641B (en) | 2014-06-20 | 2014-06-20 | The weighting calibration method of CMP terminal detecting systems |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410280249.2A CN105336641B (en) | 2014-06-20 | 2014-06-20 | The weighting calibration method of CMP terminal detecting systems |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105336641A CN105336641A (en) | 2016-02-17 |
| CN105336641B true CN105336641B (en) | 2018-02-02 |
Family
ID=55287082
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410280249.2A Active CN105336641B (en) | 2014-06-20 | 2014-06-20 | The weighting calibration method of CMP terminal detecting systems |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105336641B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6749414B2 (en) * | 2016-12-02 | 2020-09-02 | 三菱電機株式会社 | Combined processing system and combined processing method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5834377A (en) * | 1997-04-07 | 1998-11-10 | Industrial Technology Research Institute | In situ method for CMP endpoint detection |
| CN1330360A (en) * | 2000-06-28 | 2002-01-09 | 国际商业机器公司 | Terminal test in chemical machinery polishing of cloisonnee structure |
| US6712669B1 (en) * | 2001-02-15 | 2004-03-30 | Tawain Semiconductor Manufacturing Company | BPSG chemical mechanical planarization process control for production control and cost savings |
| CN1643662A (en) * | 2002-03-29 | 2005-07-20 | 兰姆研究有限公司 | System and method of broad band optical end point detection for film change indication |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IL133326A0 (en) * | 1999-12-06 | 2001-04-30 | Nova Measuring Instr Ltd | Method and system for endpoint detection |
-
2014
- 2014-06-20 CN CN201410280249.2A patent/CN105336641B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5834377A (en) * | 1997-04-07 | 1998-11-10 | Industrial Technology Research Institute | In situ method for CMP endpoint detection |
| CN1330360A (en) * | 2000-06-28 | 2002-01-09 | 国际商业机器公司 | Terminal test in chemical machinery polishing of cloisonnee structure |
| US6712669B1 (en) * | 2001-02-15 | 2004-03-30 | Tawain Semiconductor Manufacturing Company | BPSG chemical mechanical planarization process control for production control and cost savings |
| CN1643662A (en) * | 2002-03-29 | 2005-07-20 | 兰姆研究有限公司 | System and method of broad band optical end point detection for film change indication |
Non-Patent Citations (2)
| Title |
|---|
| "CMP综合终点检测研究";周国安等;《微纳电子技术》;20090630;第46卷(第6期);第371-374、382页 * |
| "Nonlinear Sequential Bayesian Analysis-Based Decision Making for End-Point Detection of Chemical Mechanical Planarization (CMP) Processes";Zhenyu Kong等;《IEEE Transactions on Semiconductor Manufacturing》;20111130;第24卷(第4期);第523-532页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105336641A (en) | 2016-02-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10197506B2 (en) | Optical metrology for in-situ measurements | |
| US7019519B2 (en) | Thickness estimation using conductively related calibration samples | |
| US9429527B1 (en) | Automatic optical inspection method of periodic patterns | |
| US6762604B2 (en) | Standalone eddy current measuring system for thickness estimation of conductive films | |
| US6808590B1 (en) | Method and apparatus of arrayed sensors for metrological control | |
| US20030201768A1 (en) | Eddy current measuring system for monitoring and controlling a CMP process | |
| CN109923654A (en) | It is reduced by the wafer noise of cross-layer image subtraction | |
| CN101992422B (en) | Process control method and system of copper chemical mechanical polishing | |
| CN105336641B (en) | The weighting calibration method of CMP terminal detecting systems | |
| US8394719B2 (en) | System and method for implementing multi-resolution advanced process control | |
| CN109698147A (en) | Wafer etching system and wafer lithographic method | |
| CN110211876A (en) | A kind of processing method of chip | |
| CN109308395A (en) | Wafer scale space measurement abnormal parameters recognition methods based on LOF-KNN algorithm | |
| CN102130032A (en) | Online detection method of ion implantation | |
| KR20120128251A (en) | Fault detection method | |
| US11631618B2 (en) | Thickness sensor for conductive features | |
| TW202101630A (en) | Dynamic amelioration of misregistration measurement | |
| US20030206009A1 (en) | Integrated eddy current measuring system for monitoring and controlling multiple semiconductor wafer fabrication processes | |
| TWI830109B (en) | Illumination adjustment method for flux detection and detection equipment using the method | |
| US20030206008A1 (en) | Eddy current measuring system for monitoring and controlling a physical vapor deposition(PVD) process | |
| US7745238B2 (en) | Monitoring of temperature variation across wafers during processing | |
| CN106002603A (en) | Copper grinding method and system | |
| KR101353250B1 (en) | Automatic dynamic baseline creation and adjustment | |
| CN103852976B (en) | For the method for periodicity litho pattern size monitoring | |
| CN108241135A (en) | A kind of method of silicon chip resistivity contactless method test process alignment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |