CN103852976B - For the method for periodicity litho pattern size monitoring - Google Patents
For the method for periodicity litho pattern size monitoring Download PDFInfo
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- CN103852976B CN103852976B CN201410126862.9A CN201410126862A CN103852976B CN 103852976 B CN103852976 B CN 103852976B CN 201410126862 A CN201410126862 A CN 201410126862A CN 103852976 B CN103852976 B CN 103852976B
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- 238000012544 monitoring process Methods 0.000 title claims abstract description 17
- 238000000034 method Methods 0.000 title claims abstract description 16
- 239000003292 glue Substances 0.000 claims abstract description 35
- 238000005259 measurement Methods 0.000 claims abstract description 11
- 230000003287 optical effect Effects 0.000 claims abstract description 10
- 238000001514 detection method Methods 0.000 claims abstract description 9
- 238000003384 imaging method Methods 0.000 claims abstract description 7
- 238000012360 testing method Methods 0.000 claims abstract description 5
- 238000011161 development Methods 0.000 claims abstract description 4
- 230000003252 repetitive effect Effects 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- 229910052594 sapphire Inorganic materials 0.000 abstract description 6
- 239000010980 sapphire Substances 0.000 abstract description 6
- 239000000758 substrate Substances 0.000 abstract description 6
- 238000005530 etching Methods 0.000 abstract description 3
- 238000012935 Averaging Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000011179 visual inspection Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The invention discloses a kind of method for the monitoring of periodicity litho pattern size, comprise the steps: S1: the GTG parameter of adjustment automated optical detection equipment, gray scale test is carried out to the glue post of the wafer after exposure imaging, carries out gray scale operation by the light of being returned by glue post surface reflection and obtain gray-scale value; S2: dimensional measurement is carried out to described glue post and obtains size value; S3: set up the corresponding relation between gray-scale value and size value; S4: carry out the wafer after scan exposure development piecewise; S5: the gray-scale value of glue post is exported as size value by corresponding relation in real time.Owing to have employed above technical scheme, make the detecting step after gold-tinted etching step to be simplified in patterned sapphire substrate field, improve production efficiency, reduce production cost.
Description
Technical field
The invention belongs to semiconductor optoelectronic chip manufacturing field.
Background technology
In patterned sapphire substrate field, manufacturer can show by 3D the mode of praying for mirror or Manual Visual Inspection to carry out glue column dimension aspect sorting to the Sapphire Substrate after the exposure imaging produced usually.But 3D shows the Monolithic Scanning overlong time of praying for mirror, can not meet large batch of continuous seepage; And the easy situation causing sorting standard to differ because of the individual difference of people of Manual Visual Inspection.
Summary of the invention
The present invention aims to provide the monitoring problem that a kind of method solves gold-tinted glue post in patterned sapphire substrate production in enormous quantities.
In order to achieve the above object, a kind of method for the monitoring of periodicity litho pattern size provided by the invention, comprises the steps:
S1: the GTG parameter of adjustment automated optical detection equipment, carries out gray scale test to the glue post of the wafer after exposure imaging, carries out gray scale operation obtain gray-scale value by the light of being returned by glue post surface reflection;
S2: dimensional measurement is carried out to described glue post and obtains size value;
S3: set up the corresponding relation between gray-scale value and size value;
S4: carry out the wafer after scan exposure development piecewise;
S5: the gray-scale value of glue post is exported as size value by corresponding relation in real time.
The monitoring work of the present invention by using the equipment with gray scale test to carry out gold-tinted glue post.Usually, AOI equipment is generally used for processing the surface defects detection in wafer production, but utilizes the gray scale function of AOI equipment, but can carry out the monitoring of gold-tinted glue column dimension well.According to Grey imaging principle, equipment is that the light reflected by different surfaces has carried out gray scale operation, thus obtains gray-scale value.And the glue post of different size, its surface reflection situation is just different, thus can obtain different gray-scale values.Therefore, we can pass through monitor ash angle value, and indirectly understand the size of gold-tinted glue post, thus provide convenience for monitoring.
As further improvement, in described step S1, S2, the multiple glue post of random selecting carries out the measurement of gray-scale value and size value to reduce the error measured.
As further improvement, for the error of averaging after same glue post repetitive measurement to reduce to measure in described step S1, S2.
As further improvement, the GTG parameter adjusting automated optical detection equipment in described step S1 is uniformly distributed in grey-scale range to make the glue post of different size.
As further improvement, in described step S2, by 3D optical microscope or SEM equipment, dimensional measurement is carried out to wafer.
As further improvement, described step S5 comprises the step of the threshold value of setting size value, when the size value exceeding threshold range being detected, exports cue and record position information.
Owing to have employed above technical scheme, make the detecting step after gold-tinted etching step to be simplified in patterned sapphire substrate field, improve production efficiency, reduce production cost.
Accompanying drawing explanation
Fig. 1 is the process flow diagram according to the method for the monitoring of periodicity litho pattern size of the present invention.
Embodiment
Below in conjunction with accompanying drawing, preferred embodiment of the present invention is described in detail, can be easier to make advantages and features of the invention be readily appreciated by one skilled in the art, thus more explicit defining is made to protection scope of the present invention.
Shown in accompanying drawing 1, it is the process flow diagram of the method for the monitoring of periodicity litho pattern size according to the present invention.The method comprises the steps:
S1: the GTG parameter of adjustment automated optical detection equipment, carries out gray scale test to the glue post of the wafer after exposure imaging, carries out gray scale operation obtain gray-scale value by the light of being returned by glue post surface reflection;
S2: by 3D optical microscope or SEM equipment, dimensional measurement is carried out to glue post and obtain size value;
S3: set up the corresponding relation between gray-scale value and size value;
S4: carry out the wafer after scan exposure development piecewise;
S5: the gray-scale value of glue post is exported as size value by corresponding relation in real time.
In order to reduce the error that measuring process is brought as much as possible, in step S1, S2, the multiple glue post of random selecting carries out the measurement of gray-scale value and size value to reduce the error measured, such as, can be the glue post of location interval random selecting far away; In addition, in step S1, S2 for the error of averaging after same glue post repetitive measurement to reduce to measure.
It should be noted that, the GTG parameter adjusting automated optical detection equipment is in step sl uniformly distributed in grey-scale range to make the glue post of different size, AOI equipment is generally used for processing the surface defects detection in wafer production, but utilize the gray scale function of AOI equipment, but can carry out the monitoring of gold-tinted glue column dimension well.According to Grey imaging principle, equipment is that the light reflected by different surfaces has carried out gray scale operation, thus obtains gray-scale value.And the glue post of different size, its surface reflection situation is just different, thus can obtain different gray-scale values.Therefore, we can pass through monitor ash angle value, and indirectly understand the size of gold-tinted glue post, thus provide convenience for monitoring.
As further improvement, the step of the threshold value of setting size value is comprised in step S5, when the size value exceeding threshold range being detected, export cue and record position information, make the detecting step after gold-tinted etching step to be simplified in patterned sapphire substrate field, improve production efficiency, reduce production cost.
Above embodiment is only for illustrating technical conceive of the present invention and feature; its object is to allow person skilled in the art understand content of the present invention and to be implemented; can not limit the scope of the invention with this; all equivalences done according to Spirit Essence of the present invention change or modify, and all should be encompassed in protection scope of the present invention.
Claims (5)
1., for a method for periodicity litho pattern size monitoring, it is characterized in that, comprise the steps:
S1: the GTG parameter of adjustment automated optical detection equipment, carries out gray scale test to the glue post of the wafer after exposure imaging, carries out gray scale operation obtain gray-scale value by the light of being returned by glue post surface reflection;
S2: by 3D optical microscope or SEM equipment, dimensional measurement is carried out to described glue post and obtain size value;
S3: set up the corresponding relation between gray-scale value and size value;
S4: carry out the wafer after scan exposure development piecewise;
S5: the gray-scale value of glue post is exported as size value by corresponding relation in real time.
2. the method for the monitoring of periodicity litho pattern size according to claim 1, is characterized in that: in described step S1, S2, the multiple glue post of random selecting carries out the measurement of gray-scale value and size value.
3. the method for the monitoring of periodicity litho pattern size according to claim 1, is characterized in that: average for after same glue post repetitive measurement in described step S1, S2.
4. the method for the monitoring of periodicity litho pattern size according to claim 1, is characterized in that: the GTG parameter adjusting automated optical detection equipment in described step S1 is uniformly distributed in grey-scale range to make the glue post of different size.
5. the method for the monitoring of periodicity litho pattern size according to claim 1, it is characterized in that: described step S5 comprises the step of the threshold value of setting size value, when the size value exceeding threshold range being detected, export cue and record position information.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201410126862.9A CN103852976B (en) | 2014-04-01 | 2014-04-01 | For the method for periodicity litho pattern size monitoring |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410126862.9A CN103852976B (en) | 2014-04-01 | 2014-04-01 | For the method for periodicity litho pattern size monitoring |
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| Publication Number | Publication Date |
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| CN103852976A CN103852976A (en) | 2014-06-11 |
| CN103852976B true CN103852976B (en) | 2016-01-20 |
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Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5508803A (en) * | 1994-12-20 | 1996-04-16 | International Business Machines Corporation | Method and apparatus for monitoring lithographic exposure |
| CN1296288A (en) * | 1999-10-20 | 2001-05-23 | 奎比克视频株式会社 | System and method for checking outward appearance of semiconductor device |
| CN100372123C (en) * | 2004-11-15 | 2008-02-27 | 西华大学 | CCD image sensor and high accuracy linear dimension measuring device and measuring method thereof |
| CN101685259B (en) * | 2008-09-25 | 2014-05-21 | 上海华虹宏力半导体制造有限公司 | Method for online monitoring of lithography circumstance |
| KR101385753B1 (en) * | 2008-11-04 | 2014-04-17 | 삼성전자주식회사 | Method for inspecting critical dimension uniformity at the high speed measurement |
| JP2010206013A (en) * | 2009-03-04 | 2010-09-16 | Toshiba Corp | Method and device of inspecting semiconductor substrate |
| CN102339733B (en) * | 2010-07-16 | 2013-09-04 | 中芯国际集成电路制造(北京)有限公司 | Method for controlling critical size of graph on uneven silicon slice surface |
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Application publication date: 20140611 Assignee: DURA-CHIP (NANTONG) Ltd. Assignor: DURA CHIP (SUZHOU) Ltd. Contract record no.: 2016320010011 Denomination of invention: Method for periodically monitoring photolithography pattern size Granted publication date: 20160120 License type: Exclusive License Record date: 20160303 |
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Address after: 2 / F, building 1, South extension, Haiyang South Road, Chengnan street, Rugao City, Nantong City, Jiangsu Province 226500 Patentee after: Haidixin semiconductor (Nantong) Co.,Ltd. Address before: 215131 Chaoyang industrial square, Lake Industrial Park, Xiangcheng District Economic Development Zone, Suzhou, Jiangsu Patentee before: Dura Chip (Suzhou) Ltd. |
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Effective date of registration: 20240318 Address after: 528225, Room A206, Building A, Nanhai Industrial Think Tank City Phase I, Taoyuan Road, Software Park, Shishan Town, Nanhai District, Foshan City, Guangdong Province (Residence Declaration) Patentee after: Foshan xinweilai Photoelectric Technology Co.,Ltd. Country or region after: China Address before: 226500 No.1, Nanyan, Haiyang South Road, Chengnan street, Rugao City, Nantong City, Jiangsu Province Patentee before: DURA-CHIP (NANTONG) Ltd. Country or region before: China |