CN105334560B - A kind of method that rotation etching angle carrys out etched diffraction grating groove profile - Google Patents
A kind of method that rotation etching angle carrys out etched diffraction grating groove profile Download PDFInfo
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- CN105334560B CN105334560B CN201510751720.6A CN201510751720A CN105334560B CN 105334560 B CN105334560 B CN 105334560B CN 201510751720 A CN201510751720 A CN 201510751720A CN 105334560 B CN105334560 B CN 105334560B
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1847—Manufacturing methods
- G02B5/1857—Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
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Abstract
The invention discloses a kind of method that rotation etching angle carrys out etched diffraction grating groove profile, it includes：Designing load grating slot shape parameter, including groove profile width, groove profile depth and groove profile shape；Initialize ion bean etcher parameter, including etch rate, etching ratio etc.；Initialize grating parameter, including the initial glue thickness of grating line density, grating, grating dutycycle etc.；The default groove profile of segmentation, determines etching angle number；It is determined that etching angle；Determine etch period；Optimize etching parameters, whether the normalization root-mean-square-deviation for judging to etch result reaches preset requirement；Not up to preset requirement then increases etching angle number until the normalization root-mean-square-deviation of etching result meets actual demand；Reach preset requirement to be then processed according to calculating parameter.Using method disclosed by the invention, the optimization machined parameters for designing groove profile can be comparatively fast obtained.
Description
Technical field
The present invention relates to grating groove profile to etch field, more particularly to a kind of under ion beam etching, the control of grating groove profile
Method processed.
Background technology
The grating tool of special groove profile has been widely used.Special channeled grating includes sinusoidal grating, balzed grating, etc..System
Making the conventional method of special grating groove profile has the ion beam etching, mechanical scratching and the crystal orientation wet etching along Si of fixed angle
Deng.
In traditional dry etching method, ion beam etching is because etching homogeneity is good, etching and is applied to efficiency high
The advantages that large area is processed, it is most widely used.There are the special trench structure such as sine of particular/special requirement for diffraction efficiency
Groove, deep-slotted chip breaker and vee gutter, existing processing method are not too much adapted to.
The present invention proposes a kind of method that rotating grating carrys out etched diffraction grating groove profile, by rotating the grating that is etched, control
The total etching number of plies of grating, the effective etch areas of grating and etch period obtain default groove profile.Obtaining default groove profile, pre-embossed light
After the parameters such as the primary condition and ion gun working condition of grid, the total etching number of plies of control optimization grating, etching angle is finally given
With the parameter such as etch period.This method, without particular/special requirement, while is also portrayed in the absence of machinery and led to grating line density, base material
The ghost line problem of cause.And specific groove profile can be designed according to demand, it is relative with for conventional method, the constrained bar of this method
Part is less, and operation is simpler, can obtain optimal solution and improve efficiency.
The content of the invention
It is an object of the invention to provide a kind of method that rotating grating carrys out etched diffraction grating groove profile, to determine final etched diffraction grating
The machined parameters of groove profile.
The purpose of the present invention is achieved through the following technical solutions：A kind of rotation etching angle carrys out etched diffraction grating groove profile
Method, this method comprise the following steps：
Step 1, groove profile digitization will be designed, that is, provide groove width W, groove depth H and groove profile S；
Step 2, the initial parameter for initializing grating, line density n, grating of the initiation parameter including grating of grating are initial
Glue thickness hp, grating dutycycle η, to meet to design groove width W and grating line density n, account for the wide relation than η：
W=η/n,
Step 3, segmentation design groove profile：Design groove profile is divided into N number of contour step part, be each partly etched depth
It is g to spend identicalt, N i.e. etching angle number, it is contemplated that the etching ratio k of actual etching processr, i.e. bottom land is etched part gtWith light
Be etched part g at the top of photoresistpRatio inverse；
Step 4, determine to etch angle, average cut-off rule has intersection point with design groove profile in step 3, connects these intersection points and photoetching
Glue tip edge sequentially forms 1,2,3 ..., the ion beam at the N bars edge such as i, N, the number for representing etching is the ith from 1 to N
Effective etch areas diExpression it is as follows：
di=dm-hi·tanθi,
Wherein, hiExpression formula is as follows：
hi=hp-i(gp-gt),
From above-mentioned diExpression and hiThe etching angle θ of ith is solved in expression formulaiIt is as follows：
Above-mentioned expression formula θ can be determined by steps 1 and 2 and 3iThe right parameter, you can to obtain the etching angle θ of ithi；
The determination of step 5, etch period：In view of ion bean etcher in whole etching process in stable condition, ith
The time t of etchingiDetermined by following formula：
ti=gt/(Er0·cosθi),
Wherein, Er0It is the constant related to ion bean etcher primary condition；
Etch total time ttotalDetermined by following formula：
Wherein, EriDetermined by following formula：
Eri=Er0·cosθi,
Step 6, optimization etching parameters：The final result of etching relies on etching angle number N, according to the etching angle currently set
Number N calculates etching result and calculates etching result and the normalization root-mean-square-deviation P of pre-designed groove profilen-rmsd, set according to demand
Surely root-mean-square-deviation P is normalizedn-rmsdThreshold value；
Step 7, according to the etching parameters calculated perform etching processing；
Summary step, it can obtain under necessarily etching angle number N, each etching angle θiDuring corresponding etching
Between ti。
Wherein, setting normalization root-mean-square-deviation threshold value P in step 6n-rmsd-t=5%.
Wherein, if the normalization root-mean-square-deviation under current etching angle number N is more than given threshold, then in step 6
Increase etching angle number, until etch result normalization root-mean-square-deviation be less than or equal to given threshold, take quarter now
Angle number N is lost for optimal etching angle number.
Etching condition and design, the groove profile of processing of the present invention has certain restriction range, below to constraint.
It is the effect of blocking by photoresist grating side wall in view of the present invention, is limited under certain etching angle, bottom land
The effective coverage being etched, if attached to the photoresist on photoresist grating is complete by ion beam etching, now it is unsatisfactory for this hair
Bright etching condition.The thickness for defining photoresist on photoresist grating is hp, pre-etching groove profile depth capacity is Hmax, etching ratio kr
Thickness is etched away for unit time photoresist and is etched away the ratio between thickness with bottom land, meets hp≥Hmax·krWhen, etching condition
Set up.
It is also contemplated that the effect of blocking of photoresist grating side wall, the scope such as accompanying drawing 2 of groove profile can be etched by providing the present invention,
The groove profile scope that the present invention can etch is on border 1 between border 2, and wherein border 1 is triangle border, and border 2 is square
Shape border.Solid line groove profile in accompanying drawing 2 can realize an example of groove profile.The groove profile scope that the present invention constrains is between border 1
To any one spill groove profile on border 2.
The present invention compared with prior art the advantages of be：
1. the present invention is under a constraint, grating groove profile can be regulated and controled, make the grating of special groove profile；
2. the present invention can effectively simulate etching groove profile, optimize machined parameters according to the actual requirements, pass through the present invention
The optimization of offer method, optimal solution can be obtained and improve efficiency.
Brief description of the drawings
In order to illustrate the technical solution of the embodiments of the present invention more clearly, required use in being described below to embodiment
Accompanying drawing be briefly described, it should be apparent that, drawings in the following description are only some embodiments of the present invention, for this
For the those of ordinary skill in field, on the premise of not paying creative work, other can also be obtained according to these accompanying drawings
Accompanying drawing.
Fig. 1 is the flow chart for the method that a kind of rotating grating provided in an embodiment of the present invention carrys out etched diffraction grating groove profile；
The etching groove profile scope schematic diagram that Fig. 2 is constrained for the present invention；
Fig. 3 is etching angle provided in an embodiment of the present invention and the schematic diagram for etching effective coverage；
Fig. 4 is the schematic diagram of one specific design groove profile of segmentation provided in an embodiment of the present invention；
Fig. 5 is the method schematic diagram that a kind of rotating grating provided in an embodiment of the present invention carrys out etched diffraction grating groove profile；
Fig. 6 is to etch result under certain primary condition provided in an embodiment of the present invention and etch the relation of angle and etch period
Schematic diagram；Wherein, Fig. 6 (a) point solid line is default groove profile, and solid line is the groove calculated according to method proposed by the present invention
Type；Fig. 6 (b) is the relation of each etching angle and corresponding etch period；
Fig. 7 is to optimize etching angle number according to the step 6 in method proposed by the present invention；
Fig. 8 is the actual etching result electron microscope that parameter is provided according to table 2.
Embodiment
With reference to the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Ground describes, it is clear that described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.Based on this
The embodiment of invention, the every other implementation that those of ordinary skill in the art are obtained under the premise of creative work is not made
Example, belongs to protection scope of the present invention.
Embodiment
Before specific embodiment, the thinking of this method is introduced：Rely on photoresist under certain etching angle blocks work
With so that bottom land is etched region as etching angle changes and changed, and is etched if controlled under each specific etching angle
Time, that is, control the depth that bottom land is etched, it is possible to obtain certain groove profile.
Some preconditions of this method are provided, in the etching process of reality, pertinent art is it should be clear that with carving
Erosion maximally related two variables of groove profile are etching angle and etch rate.Etching angle determines the effective etching for the bottom land that is etched every time
Region, and etch rate is determined under certain etching angle, certain etch period, the depth for the bottom land that is etched.
Simplify etch rate under certain condition with etching the relation at angle：
Er=Er0Cos θ,
E in expression formularFor etch rate, Er0It is the constant related to ion bean etcher primary condition, θ is etching angle.
When ion beam is bombarded on grating at an angle, the explanation of relevant parameter is provided, as shown in Fig. 2 ion
The angle of beam and grating normal is defined as etching angle θ, and the effective coverage of etching refers to the part that bottom land is arrived by ion beam bombardment, schemes
The effective coverage etched in 2 refers to dei。
In order to obtain pre-designed groove profile, the primary condition for the grating being etched and the etching parameters of ion bean etcher will
Provide, i.e. the initial glue thickness h of line density n, grating of gratingp, grating dutycycle η；The etch rate k of ion bean etcher, initially
Under the conditions of etching ratio kr.Providing default groove profile parameter includes the shape S, the depth H of groove profile etc. of groove profile simultaneously.
Provide a specific example such as table 1 below：
Table 1
The specific steps of this method implementation are provided with reference to table 1.
Step 1, groove profile digitization will be designed, that is, provide groove width W=400nm in the present embodiment, groove depth H=500nm and groove
Type S, groove profile S such as Fig. 6 (a), can be represented in the data processing softwares such as MATLAB with the data mode of matrix；
Step 2, the initial parameter for initializing grating, the initiation parameter of grating include the line density n=1250l/ of grating
The initial glue thickness h of mm, gratingp=300nm, grating dutycycle η=50%.Meet to design groove width W and grating line density n, account for width
Relation than η：
W=η/n,
Step 3, segmentation design groove profile such as Fig. 4, will design groove profile and are divided into N=4 contour step parts, each part
The identical depth that is etched is gt, i.e. gt=125nm, N etch angle number, it is contemplated that the etching ratio k of actual etching processr=
1/10, the thickness g that is etched every time at the top of photoresist can be obtainedp=gt·kr=125nm；
Step 4, determine to etch angle, average cut-off rule has intersection point with design groove profile in step 3, connects these intersection points and photoetching
Glue tip edge sequentially forms the ion beam at 1,2,3,4 edge.The order for representing etching is from 1 to 4.Ith effectively etches
Region diExpression it is as follows：
di=dm-hi·tanθi, dm=W,
hiExpression formula is as follows：
hi=hp-i(gp-gt),
The etching angle that ith is solved from above-mentioned expression formula is as follows：
Parameter on the right of above-mentioned expression formula can be determined by steps 1 and 2 and 3, you can to obtain the etching angle of ith；
The determination of step 5, etch period.In view of ion bean etcher in whole etching process in stable condition, ith
The time of etching is determined by following formula：
ti=gt/(Er0·cosθi),
Etching is determined total time by following formula：
Step 6, optimization etching parameters.The final result of etching relies on etching angle number N, according to the etching angle currently set
Number N calculates etching result and calculates etching result and the normalization root-mean-square-deviation P of pre-designed groove profilen-rmsd, set according to demand
Surely root-mean-square-deviation P is normalizedn-rmsdThreshold value, such as setting normalization root-mean-square-deviation threshold value Pn-rmsd-t=5%.If work as
Normalization root-mean-square-deviation under preceding etching angle number N is more than given threshold, then increases etching angle number, until etching is tied
The normalization root-mean-square-deviation of fruit is less than or equal to given threshold, and it is optimal etching angle number to take etching angle number N now.Press
The initial parameter provided according to table 1, root-mean-square-deviation such as Fig. 7 of groove profile is calculated, normalization root-mean-square-deviation threshold value is read from Fig. 7
Pn-rmsd-tOptimal etching angle number N corresponding to=5%opti=16.
Step 7, according to calculate but parameter perform etching processing.Summary step, it can obtain necessarily carving
Lose under the number N of angle, each etching angle θiCorresponding etch period ti.Provide the result of calculation such as table 2 according to table 1.
Table 2
In summary, this method is realized under given certain primary condition, and the grating that will be etched is according to certain angle
The degree rotation regular hour, finally give pre-etching groove profile.Its schematic diagram such as Fig. 5.
The simulation result of calculation under the primary condition provided according to table 1, such as Fig. 6 is given below.Wherein, Fig. 6 (a) point is real
Line is default groove profile, and solid line is the groove profile calculated according to method proposed by the present invention；Fig. 6 (b) is each etching angle and correspondingly
The relation of etch period；It can be seen that result of calculation and theoretical curve have certain deviation, according in method proposed by the present invention
Step 6 optimize etching angle number such as Fig. 7, optimal optimum results can be obtained in point (Nopti,Pn-rmsd-t).According to table
2 carry out actual lithography, provide this example etching result such as accompanying drawing 8.
Claims (5)
1. a kind of method that rotation etching angle carrys out etched diffraction grating groove profile, it is characterised in that：This method comprises the following steps：
Step 1, groove profile digitization will be designed, that is, provide groove width W, groove depth H and groove profile S；
Step 2, the initial parameter for initializing grating, the initiation parameter of grating include the initial glue thickness of line density n, grating of grating
hp, grating dutycycle η, to meet to design groove width W and grating line density n, account for the wide relation than η：
W=η/n,
Step 3, segmentation design groove profile：Design groove profile is divided into N number of contour step part, be each partly etched depth phase
Same is gt, N i.e. etching angle number, it is contemplated that the etching ratio k of actual etching processr, i.e. bottom land is etched part gtWith photoresist
Top is etched part gpRatio inverse；
Step 4, determine to etch angle, average cut-off rule has intersection point with design groove profile in step 3, connects these intersection points and photoresist top
End margin sequentially forms 1,2,3 ..., i ..., the ion beam at the N bars edge such as N, the number for representing etching is from 1 to N, and ith has
Imitate etch areas diExpression it is as follows：
di=dm-hi·tanθi,
dmFor the molded breadth of photoresist grating bottom land；
Wherein, hiExpression formula is as follows：
hi=hp-i(gp-gt),
From above-mentioned diExpression and hiThe etching angle θ of ith is solved in expression formulaiIt is as follows：
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Above-mentioned expression formula θ can be determined by steps 1 and 2 and 3iThe right parameter, you can to obtain the etching angle θ of ithi；
The determination of step 5, etch period：In view of ion bean etcher in whole etching process it is in stable condition, ith etching
Time tiDetermined by following formula：
ti=gt/(Er0·cosθi),
Wherein, Er0It is the constant related to ion bean etcher primary condition；
Etch total time ttotalDetermined by following formula：
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Wherein, EriDetermined by following formula：
Eri=Er0·cosθi,
Step 6, optimization etching parameters：The final result of etching relies on etching angle number N, according to the etching angle number currently set
N calculates etching result, while calculates etching result and the normalization root-mean-square-deviation P of pre-designed groove profilen-rmsd, set according to demand
Surely root-mean-square-deviation P is normalizedn-rmsdThreshold value；
Step 7, according to the etching parameters calculated perform etching processing；
Summary step, it can obtain under necessarily etching angle number N, each etching angle θiCorresponding etch period ti。
2. the method that a kind of rotation etching angle according to claim 1 carrys out etched diffraction grating groove profile, it is characterised in that：Step
If the normalization root-mean-square-deviation under current etching angle number N is more than given threshold in 6, then increase etching angle number,
Until the normalization root-mean-square-deviation for etching result is less than or equal to given threshold, it is optimal quarter to take etching angle number N now
Lose angle number.
3. the method that a kind of rotation etching angle according to claim 1 carrys out etched diffraction grating groove profile, it is characterised in that：The party
The etching condition and etching groove profile scope of method have certain constraint.
4. the method that a kind of rotation etching angle according to claim 3 carrys out etched diffraction grating groove profile, it is characterised in that：The party
The etching condition constraint of method is as follows：The thickness for defining photoresist on photoresist grating is hp, pre-etching groove profile depth capacity is
Hmax, etching ratio krThickness is etched away for unit time photoresist and is etched away the ratio between thickness with bottom land, meets hp≥Hmax·kr
When, etching condition is set up.
5. the method that a kind of rotation etching angle according to claim 3 carrys out etched diffraction grating groove profile, it is characterised in that：The party
It is as follows that method can etch groove profile range constraint：The groove profile scope that this method can etch on border 1 between border 2, wherein side
Boundary 1 is triangle border, and border 2 is square boundary, the groove profile scope that this method can etch on border 1 between border 2,
The groove profile scope of constraint is any one spill groove profile between border 1 to border 2.
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| JP2841441B2 (en) * | 1989-03-27 | 1998-12-24 | 株式会社島津製作所 | Diffraction grating and manufacturing method thereof |
| JP4349104B2 (en) * | 2003-11-27 | 2009-10-21 | 株式会社島津製作所 | Blazed holographic grating, manufacturing method thereof, and replica grating |
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