CN105321850B - Laser crystallization device - Google Patents

Laser crystallization device Download PDF

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Publication number
CN105321850B
CN105321850B CN201510111851.8A CN201510111851A CN105321850B CN 105321850 B CN105321850 B CN 105321850B CN 201510111851 A CN201510111851 A CN 201510111851A CN 105321850 B CN105321850 B CN 105321850B
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outgoing
laser beam
mirror
laser
reflected
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CN105321850A (en
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秋秉权
安尚薰
郑炳昊
赵珠完
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Samsung Display Co Ltd
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Samsung Display Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0643—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising mirrors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Crystallography & Structural Chemistry (AREA)
  • Health & Medical Sciences (AREA)
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  • High Energy & Nuclear Physics (AREA)
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  • Mechanical Engineering (AREA)
  • Electromagnetism (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

The invention discloses a laser crystallization device. The laser crystallization apparatus according to an embodiment of the present invention includes: a laser generator generating an incident laser beam; an optical system that optically converts the incident laser beam to produce an outgoing laser beam; and a stage on which an object substrate on which an object film to be crystallized by laser light is formed by irradiation with the emitted laser beam is mounted, the optical system including: and the pulse expansion and up-down overturning module is used for increasing the pulse duration of the incident laser beam and overturning the pulse shape of the incident laser beam up and down.

Description

Laser crystallization device
Technical Field
The present invention relates to a laser crystallization apparatus, and more particularly, to a laser crystallization apparatus for crystallizing an amorphous silicon layer into a polycrystalline silicon layer.
Background
Generally, Amorphous Silicon (amophorus Silicon) has a disadvantage of low mobility of electrons as charge carriers. On the other hand, for a driver circuit in which it is impossible to realize a Thin Film Transistor (TFT) made of amorphous Silicon on a substrate, polysilicon (polycrystalline Silicon) may be implemented on the substrate. Therefore, since the thin film transistor made of polycrystalline silicon is directly formed on the substrate, it is not necessary to connect a plurality of terminals to a Driver integrated circuit (Driver IC), so that productivity and reliability can be improved, and the thickness of the display device can be reduced.
As a method for manufacturing such a polycrystalline silicon thin film transistor under a low temperature condition, there are a Solid Phase Crystallization (SPC), a Metal Induced Crystallization (MIC), a Metal Induced Lateral Crystallization (MILC), an Excimer Laser Annealing (ELA), and the like. In particular, in the manufacturing process of an Organic light emitting Display device (OLED) or a Liquid Crystal Display device (LCD), an excimer laser heat treatment method (ELA) that performs crystallization using a laser beam having high energy is used.
The laser generator used in the laser crystallization apparatus of this excimer laser heat treatment method (ELA) is a pulse type laser generator, and uniformity of intensity (intensity) between shots (shot) is very important. The Pulse duration of the laser beam is increased by using a Pulse extension module (PEX), thereby improving the inter-Pulse spread of the laser beam. However, although the inter-pulse spread of the laser beam can be improved by using a pulse expansion module (PEX), it is difficult to improve the intensity deviation between a plurality of positions within one laser beam, that is, the inter-beam position intensity spread.
Further, as for the main laser beam and the auxiliary laser beam generated by the pulse type laser generator, the main laser beam and the auxiliary laser beam can be uniformly mixed by 50% each by using a beam mixer module (beam mixer module). However, although the uniformity of the laser beam can be improved by using the beam mixing module, it is difficult to improve the inter-pulse dispersion of the laser beam.
Disclosure of Invention
The present invention has been made to solve the above-described problems of the background art, and an object of the present invention is to provide a laser crystallization apparatus capable of improving intensity distribution between positions within a laser beam.
The laser crystallization apparatus according to an embodiment of the present invention may include: a laser generator generating an incident laser beam; an optical system that optically converts the incident laser beam to produce an outgoing laser beam; and a stage on which an object substrate on which an object film to be crystallized by laser light is formed by irradiation with the emitted laser beam is mounted, wherein the optical system may include: and the pulse expansion and up-down turning module is used for increasing the pulse duration of the incident laser beam and turning the pulse shape of the incident laser beam up and down.
The pulse expansion and up-down turning module comprises: a beam splitter that reflects a part of the light beam and transmits the remaining part of the light beam; and a mirror that reflects all of the beams, and that can produce a plurality of outgoing beams using the beam splitter and the mirror, and that can mix the plurality of outgoing beams to produce the outgoing laser beam.
The beam splitter may reflect 50% of the incident laser beam to produce a reflected beam and transmit the remaining 50% of the incident laser beam to produce a transmitted beam, and the mirror may re-enter the reflected beam into the beam splitter, and may mix a first outgoing beam that is the transmitted beam transmitted through the beam splitter and a plurality of second outgoing beams that are outgoing after the reflected beam travels along a loop path to produce the outgoing laser beam.
The mirrors may include a first mirror, a second mirror, and a third mirror.
The loop path may be a path in which the reflected light beam is reflected on the first mirror, the second mirror, and the third mirror in sequence and then enters the beam splitter.
The reflected beam may travel on the loop path and flip up and down.
The first mirror may reflect the reflected light beam reflected at the beam splitter to re-enter the second mirror, and the second mirror may reflect the reflected light beam reflected at the first mirror to re-enter the third mirror, and the third mirror may reflect the reflected light beam reflected at the second mirror to re-enter the beam splitter.
50% of the reflected beam re-entering the beam splitter is reflected at the beam splitter as a second outgoing beam, and the remaining 50% of the reflected beam re-entering the beam splitter can pass through the beam splitter to travel again along the loop path.
The loop path may be repeated indefinitely to sequentially eject the second plurality of ejected beams.
The beam splitter may reflect 50% of the incident laser beam to produce a reflected beam and transmit the remaining 50% of the incident laser beam to produce a transmitted beam, and the mirror may re-enter the transmitted beam into the beam splitter, and may mix a first outgoing beam that is the reflected beam reflected by the beam splitter and a plurality of second outgoing beams that are outgoing after the transmitted beam travels along a loop path to produce the outgoing laser beam.
The mirror may include a first mirror and a second mirror.
The loop path may be a path in which the transmitted light beam is reflected by the first mirror and the second mirror in sequence and enters the beam splitter.
The transmitted beam may travel on the loop path and flip up and down.
The first mirror may reflect the transmitted light beam transmitted through the beam splitter and may reenter the second mirror, and the second mirror may reflect the transmitted light beam reflected by the first mirror and reenter the beam splitter.
50% of the transmitted light beam re-incident on the beam splitter is transmitted through the beam splitter to become a second outgoing light beam, and the remaining 50% of the transmitted light beam re-incident on the beam splitter may be reflected at the beam splitter to travel along the loop path again.
The loop path may be repeated indefinitely to sequentially eject the second plurality of ejected beams.
The laser crystallization apparatus may further include: and the pulse expansion and left-right turning module is used for increasing the pulse duration of the incident laser beam and turning the pulse shape of the incident laser beam left and right at the same time.
According to an embodiment of the present invention, a plurality of outgoing laser beams are produced by providing an optical system including a beam splitter and a mirror, and the plurality of outgoing laser beams are mixed to produce an outgoing laser beam, so that the inter-beam position intensity spread of the incident laser beam can be compensated in the outgoing laser beam.
In addition, the process margin (process margin) can be enlarged by increasing the pulse duration to increase the grain size of the polycrystalline silicon layer. Thus, inter-pulse dispersion of the incident laser beam can be improved in the outgoing laser beam.
Drawings
Fig. 1 is a schematic view of a laser crystallization apparatus according to an embodiment of the present invention.
Fig. 2 is a detailed explanatory view of the optical system of fig. 1.
FIG. 3 is a diagram illustrating the travel path of a first outgoing beam produced by the optical system of FIG. 2; FIG. 4 is a diagram illustrating a first loop (loop) path followed by a second outgoing beam produced by the optical system of FIG. 2; fig. 5 is a diagram illustrating a second loop path traveled by a third outgoing optical beam manufactured by the optical system of fig. 2.
Fig. 6 is a graph showing a change in intensity based on the pulse duration of the outgoing laser beam emitted through the optical system of fig. 2.
Fig. 7 is a detailed explanatory view of an optical system of a laser crystallization apparatus according to another embodiment of the present invention.
FIG. 8 is a diagram illustrating the travel path of a first outgoing beam produced by the optical system of FIG. 7; FIG. 9 is a diagram illustrating a first loop (loop) path followed by a second outgoing beam produced by the optical system of FIG. 7; fig. 10 is a diagram illustrating a second loop path traveled by a third outgoing optical beam manufactured by the optical system of fig. 7.
Fig. 11 is a detailed explanatory view of an optical system of a laser crystallization apparatus according to still another embodiment of the present invention.
Description of the symbols:
1. 2: incident laser beams 1 ', 2': emits a laser beam
10: the laser generator 20: optical system
21: pulse expansion and up-down turning module
22. Pulse expansion and left-right turning module
30: tables 40, 60: beam splitter
50. 70: mirror
Detailed Description
Hereinafter, various embodiments of the present invention will be described in detail with reference to the accompanying drawings so as to be easily implemented by those having ordinary knowledge in the art to which the present invention pertains. The present invention may be embodied in many different forms and is not limited to the embodiments described herein.
For the sake of clarity, the same reference numerals are given to the same or similar components throughout the specification, and portions not related to the description are omitted for clarity.
Note that the size and thickness of each component shown in the drawings are arbitrarily shown for convenience of explanation, and the present invention is not necessarily limited to the illustrated case.
Then, a laser crystallization apparatus according to an embodiment of the present invention is described in detail with reference to fig. 1 to 5.
Fig. 1 is a schematic view of a laser crystallization apparatus according to an embodiment of the present invention. Fig. 2 is a detailed explanatory view of the optical system of fig. 1.
As shown in fig. 1, a laser crystallization apparatus according to an embodiment of the present invention includes: a laser generator 10 that generates an incident laser beam 1; an optical system 20 that optically converts the incident laser beam 1 to produce an outgoing laser beam 1'; and a stage 30 on which a target substrate 100 is mounted, the target substrate 100 having a target film 110 formed thereon, which is irradiated with the emitted laser beam 1' and crystallized by the laser.
The incident laser beam 1 generated by the laser generator 10 is an excimer laser beam or the like that induces phase change (phasing) in the target film 110, and it becomes an outgoing laser beam 1' to crystallize the target film 110 formed on the target substrate 100. The target thin film 110 may be an amorphous silicon layer, which can be formed by a method such as a low pressure chemical vapor deposition method, an atmospheric pressure chemical vapor deposition method, a PECVD (plasma enhanced chemical vapor deposition) method, a sputtering method, or a vacuum evaporation method.
As shown in fig. 2, the optical system 20 includes a pulse expanding and flipping module 21, and the pulse expanding and flipping module 21 flips the pulse shape of the incident laser beam 1 up and down while increasing the pulse duration of the incident laser beam 1.
The pulse expansion and flip-up/down module 21 includes: a beam splitter (splitter)40 that reflects a part of the light beam and transmits the remaining part of the light beam; a mirror (mirror)50, reflecting the entire light beam. The incident laser beam 1 is produced into a plurality of outgoing laser beams 1A, 1B, 1C by the beam splitter 40 and the mirror 50, and the outgoing laser beams 1A, 1B, 1C are mixed to produce an outgoing laser beam 1'.
The beam splitter 40 reflects 50% of the incident laser beam 1 to produce a reflected beam 12 and transmits the remaining 50% of the incident laser beam 1 to produce a first transmitted beam 11.
Mirror 50 causes reflected beam 12 to travel along first loop path 13 before impinging beam splitter 40. mirror 50 may include first, second, and third mirrors 51, 52, 53 spaced apart from one another.
The beam splitter 40 reflects 50% of the reflected light beam 12 re-incident through the first loop path 13 to produce a second outgoing light beam 1B, transmits 50% of the reflected light beam 12 to produce a second transmitted light beam 14, and causes the second transmitted light beam 14 to travel along the second loop path 15 by the mirror 50.
The first outgoing beam 1A as the first transmitted beam 11 transmitted through the beam splitter 40, the second outgoing beam 1B emitted after the reflected beam 12 travels along the first loop path 13, and the third outgoing beam 1C emitted after the second transmitted beam 14 travels along the second loop path 15 are mixed to produce an outgoing laser beam 1'.
The specific operation of the pulse spreading and flip-up/down module will be described in detail with reference to fig. 3 to 5.
Fig. 3 is a diagram showing a traveling path of a first outgoing beam manufactured by the optical system of fig. 2, fig. 4 is a diagram showing a first loop path traveled by a second outgoing beam manufactured by the optical system of fig. 2, and fig. 5 is a diagram showing a second loop path traveled by a third outgoing beam manufactured by the optical system of fig. 2.
First, as shown in fig. 3, 50% of the incident laser beam 1 transmitted through the beam splitter 40 becomes the first transmitted beam 11 to form the first outgoing beam 1A. At this time, the incident laser beam 1 and the first outgoing beam 1A are not inverted vertically. That is, when the incident laser beam 1 has a pulse shape with a strong intensity at the upper right end, the first outgoing beam 1A will also have a pulse shape with a strong intensity at the upper right end.
Then, as shown in fig. 4, 50% of the incident laser beam 1 reflected from the beam splitter 40 is a reflected beam 12, travels on the first loop path 13 reflected by the first mirror 51, the second mirror 52, and the third mirror 53 in this order, and enters the beam splitter 40 again. Also, 50% of the reflected beam 12 is reflected at the beam splitter 40 to form a second outgoing beam 1B. At this time, the second outgoing beam 1B is turned upside down compared to the incident laser beam 1. That is, when the incident laser beam 1 has a pulse shape with a strong intensity at the upper right end, the second outgoing beam 1B will have a pulse shape with a strong intensity at the lower right end.
Then, as shown in fig. 5, 50% of the reflected light beam 12 that has entered the beam splitter 40 is transmitted and becomes the second transmitted light beam 14, and the second transmitted light beam 14 is reflected by the first mirror 51, the second mirror 52, and the third mirror 53 in this order, travels along the second loop path 15, and enters the beam splitter 40 again. Then, 50% of the second transmitted light beam 14 is reflected by the beam splitter 40 to form a third outgoing light beam 1C. At this time, the third outgoing beam 1C is turned upside down compared to the second outgoing beam 1B, and thus will have the same pulse shape as the incident laser beam 1. That is, when the incident laser beam 1 has a pulse shape with a strong intensity at the upper right end, the third outgoing beam 1C will have a pulse shape with a strong intensity at the upper right end.
Therefore, as shown in fig. 2, the first outgoing beam 1A having a strong-intensity pulse shape at the upper right end, the second outgoing beam 1B having a strong-intensity pulse shape at the lower right end, and the third outgoing beam 1C having a strong-intensity pulse shape at the upper right end are mixed to produce an outgoing laser beam 1'. This emitted laser beam 1' has a Pulse Shape (Pulse Shape) with uniform intensity.
In this way, by providing the pulse expanding and up-down reversing module 21 including the beam splitter 40 and the mirror 50 to produce the plurality of outgoing beams 1A, 1B, 1C reversed up and down with each other and to produce the outgoing laser beam 1 'by mixing the plurality of outgoing beams 1A, 1B, 1C, it is possible to compensate for the intensity distribution among the beam internal positions of the incoming laser beam 1 in the outgoing laser beam 1'. In addition, 50% of the second transmitted beam 14 is again transmitted at the beam splitter 40 and will thus again travel in the loop path. In this way, a plurality of outgoing beams such as the fourth outgoing beam and the fifth outgoing beam are sequentially emitted endlessly repeatedly on the loop path.
Fig. 6 is a graph showing a change in intensity based on the pulse duration of the outgoing laser beam emitted through the optical system of fig. 2.
In one embodiment, the laser delay time (laser delay time) becomes 6.6ns in the case where the incident laser beam 1 passes through the pulse expanding and flipping module 21 and the path length of the incident laser beam 1 reaches 2 m. Therefore, the incident laser beam 1 passes through the pulse expanding and up-down flipping module 21 to emit the first outgoing beam 1A after 6.6ns, the second outgoing beam 1B after 6.6ns after the first outgoing beam 1A, and the third outgoing beam 1C after 6.6ns after the second outgoing beam 1B, and as a result, the outgoing laser beam 1' mixing these outgoing beams increases the pulse duration of 19.8ns in total.
Thus, the pulse expansion and up-down flip module 21 is used to increase the path length of the incident laser beam 1 and increase the pulse duration, thereby increasing the grain size of the polysilicon layer. Accordingly, the process margin (process margin) can be enlarged to improve the inter-pulse dispersion of the incident laser beam 1 in the emitted laser beam 1'.
Further, the pulse duration may be adjusted by adjusting the distance between the first to third mirrors 51, 52, 53, the distance between the first mirror 51 and the beam splitter 40, and the distance between the third mirror 53 and the beam splitter 40.
In addition, the mirrors include the first mirror, the second mirror, and the third mirror in the one embodiment, but another embodiment using two facing first and second mirrors may be possible.
Hereinafter, a laser crystallization apparatus according to another embodiment of the present invention will be described in detail with reference to fig. 7 to 10.
Compared with the one embodiment shown in fig. 1 to 5, the other embodiment is substantially the same except for the optical system, and thus, a repetitive description thereof will be omitted.
Fig. 7 is a detailed explanatory view of an optical system of a laser crystallization apparatus according to another embodiment of the present invention.
As shown in fig. 7, the optical system 20 includes a pulse expanding and flipping module 21, and the pulse expanding and flipping module 21 flips the pulse shape of the incident laser beam 1 up and down while increasing the pulse duration of the incident laser beam 1.
The pulse expansion and flip-up/down module 21 includes: a beam splitter (splitter)40 that reflects a part of the light beam and transmits the remaining part of the light beam; and a mirror 50 reflecting the entire light beam. The incident laser beam 1 is produced into a plurality of outgoing laser beams 1A, 1B, 1C by the beam splitter 40 and the mirror 50, and the outgoing laser beams 1A, 1B, 1C are mixed to produce an outgoing laser beam 1'.
The beam splitter 40 reflects 50% of the incident laser beam 1 to produce a first reflected beam 111 and transmits the remaining 50% of the incident laser beam 1 to produce a transmitted beam 112.
Mirror 50 causes transmitted beam 112 to travel along a first looped path 113 before impinging beam splitter 40. mirror 50 may include first and second mirrors 51, 52 spaced apart from one another.
Further, the beam splitter 40 transmits 50% of the transmitted light beam 112 re-incident through the first loop path 113 to produce a second outgoing light beam 1B, reflects 50% of the transmitted light beam 112 to produce a second reflected light beam 114, and causes the second reflected light beam 114 to travel along a second loop path 115 by means of the mirror 50.
The first outgoing beam 1A as the first reflected beam 111 reflected on the beam splitter 40, the second outgoing beam 1B emitted after the transmitted beam 112 travels along the first loop path 113, and the third outgoing beam 1C emitted after the second reflected beam 114 travels along the second loop path 115 are mixed to produce an outgoing laser beam 1'.
The specific operation of the pulse spreading and flip-up/down module will be described in detail below with reference to fig. 8 to 10.
FIG. 8 is a diagram illustrating the travel path of a first outgoing beam produced by the optical system of FIG. 7; FIG. 9 is a diagram illustrating a first loop (loop) path followed by a second outgoing beam produced by the optical system of FIG. 7; fig. 10 is a diagram illustrating a second loop path traveled by a third outgoing optical beam manufactured by the optical system of fig. 7.
First, as shown in fig. 8, 50% of the incident laser beam 1 reflected on the beam splitter 40 becomes the first reflected light beam 111 to form the first outgoing beam 1A. At this time, the incident laser beam 1 and the first outgoing beam 1A are not inverted vertically. That is, when the incident laser beam 1 has a pulse shape with a strong intensity at the upper right end, the first outgoing beam 1A will also have a pulse shape with a strong intensity at the upper right end.
Then, as shown in fig. 9, 50% of the incident laser beam 1 transmitted through the beam splitter 40 becomes a transmitted beam 112, travels on a first loop path 113 reflected by the first mirror 51 and the second mirror 52 in this order, and enters the beam splitter 40 again. Then, 50% of the transmitted light beam 112 is transmitted through the beam splitter 40 to form a second outgoing light beam 1B. At this time, the second outgoing beam 1B is turned upside down compared to the incident laser beam 1. That is, when the incident laser beam 1 has a pulse shape with a strong intensity at the upper right end, the second outgoing beam 1B will have a pulse shape with a strong intensity at the lower right end.
Then, as shown in fig. 10, 50% of the transmitted light beam 112 that has entered the beam splitter 40 is reflected to become a second reflected light beam 114, and the second reflected light beam 114 is reflected by the first mirror 51 and the second mirror 52 in this order to travel along the second loop path 115 and enters the beam splitter 40 again. Also, 50% of the second reflected beam 114 is transmitted through the beam splitter 40 to form a third outgoing beam 1C. At this time, the third outgoing beam 1C is turned upside down compared to the second outgoing beam 1B, and thus will have the same pulse shape as the incident laser beam 1. That is, when the incident laser beam 1 has a pulse shape with a strong intensity at the upper right end, the third outgoing beam 1C will have a pulse shape with a strong intensity at the upper right end.
Therefore, as shown in fig. 7, the first outgoing beam 1A having a strong-intensity pulse shape at the upper right end, the second outgoing beam 1B having a strong-intensity pulse shape at the lower right end, and the third outgoing beam 1C having a strong-intensity pulse shape at the upper right end are mixed to produce an outgoing laser beam 1'. This emitted laser beam 1' has a Pulse Shape (Pulse Shape) with uniform intensity.
In this way, by providing the pulse expanding and up-down reversing module 21 including the beam splitter 40 and the mirror 50 to produce the plurality of outgoing beams 1A, 1B, 1C reversed up and down with each other and to produce the outgoing laser beam 1 'by mixing the plurality of outgoing beams 1A, 1B, 1C, it is possible to compensate for the intensity distribution among the beam internal positions of the incoming laser beam 1 in the outgoing laser beam 1'. In addition, the pulse expansion and up-down flip module 21 is used to increase the path length of the incident laser beam 1 and increase the pulse duration, thereby increasing the grain size of the polysilicon layer. Accordingly, the process margin (process margin) can be enlarged to improve the inter-pulse dispersion of the incident laser beam 1 in the emitted laser beam 1'. Further, the pulse duration may be adjusted by adjusting the distance between first mirror 51 and second mirror 52, the distance between first mirror 51 and beam splitter 40, and the distance between second mirror 52 and beam splitter 40.
Furthermore, 50% of the second reflected beam 114 is reflected again on the beam splitter 40 and will then travel on the loop path again. In this way, a plurality of outgoing beams such as the fourth outgoing beam and the fifth outgoing beam are sequentially emitted endlessly repeatedly on the loop path.
In addition, only the pulse expansion and vertical inversion module 21 is provided in the above-described another embodiment, but another embodiment in which a pulse expansion and horizontal inversion module is further provided is also possible.
Hereinafter, a laser crystallization apparatus according to still another embodiment of the present invention will be described in detail with reference to fig. 11.
Compared with the other embodiments shown in fig. 7 to 10, the other embodiments are substantially the same except that the pulse spreading and left-right flipping module is further provided, and therefore, the repeated description is omitted.
Fig. 11 is a detailed explanatory view of an optical system of a laser crystallization apparatus according to still another embodiment of the present invention.
As shown in fig. 11, the optical system 20 includes: a pulse expanding and up-down reversing module 21 for increasing the pulse duration of the incident laser beam 1 and simultaneously reversing the pulse shape of the incident laser beam 1 up and down; the pulse expanding and right-left reversing module 22 reverses the pulse shape of the outgoing laser beam 1 'while increasing the pulse duration of the outgoing laser beam 1' emitted from the pulse expanding and up-down reversing module 21.
The intensity spread between the beam internal positions of the incident laser beam 1 can be compensated by the outgoing laser beam 1' emitted from the pulse expanding and vertical inverting module 21. However, since only the vertical inversion of the beam can be realized, there is a possibility that the intensity of the outgoing laser beam 1' varies between the left and right sides. In order to compensate for such a variation in intensity between the left and right sides of the outgoing laser beam 1', a pulse expansion and left-right flip module 22 is provided. The outgoing laser beam 1' is here an incoming laser beam 2 and enters the pulse expanding and left-right flipping module 22.
The pulse expansion and left-right flipping module 22 includes: a beam splitter 60 that reflects a part of the light beam and transmits the remaining part of the light beam; a mirror 70 reflects the entire light beam. The incident laser beam 2 is produced into a plurality of outgoing beams 2A, 2B, 2C by the beam splitter 60 and the mirror 70, and the outgoing laser beams 2A, 2B, 2C are mixed to produce an outgoing laser beam 2'.
The beam splitter 60 reflects 50% of the incident laser beam 2 to produce a first reflected beam 111 and transmits the remaining 50% of the incident laser beam 2 to produce a transmitted beam 112.
Mirror 70 causes transmitted beam 112 to travel along a first looped path 113 before impinging beam splitter 60. mirror 70 may include first and second mirrors 71, 72 spaced apart from one another.
Further, the beam splitter 60 transmits 50% of the transmitted light beam 112 re-incident through the first loop path 113 to produce a second outgoing light beam 2B, reflects 50% of the transmitted light beam 112 to produce a second reflected light beam 114, and causes the second reflected light beam 114 to travel along the second loop path 115 by using the mirrors 71, 72.
The first outgoing beam 2A as the first reflected beam 111 reflected on the beam splitter 60, the second outgoing beam 2B emitted after the transmitted beam 112 travels along the first loop path 113, and the third outgoing beam 2C emitted after the second reflected beam 114 travels along the second loop path 115 are mixed to produce the outgoing laser beam 2'.
Since the incident laser beam 2 and the first outgoing beam 2A are not inverted vertically, when the incident laser beam 2 has a pulse shape with a strong intensity on the right side, the first outgoing beam 2A also has a pulse shape with a strong intensity on the right side. Since the second outgoing beam 2B is inverted right and left as compared with the incident laser beam 2, the second outgoing beam 2B has a pulse shape with a strong intensity on the left side. The third outgoing beam 2C is inverted right and left as compared with the second outgoing beam 2B, and therefore has the same pulse shape as the incident laser beam 2. That is, if the incident laser beam 2 has a pulse shape with a strong intensity on the right side, the third outgoing beam 2C will have a pulse shape with a strong intensity on the right side.
Therefore, as shown in fig. 11, the first outgoing beam 2A having a pulse shape with a strong intensity on the right side, the second outgoing beam 2B having a pulse shape with a strong intensity on the left side, and the third outgoing beam 2C having a pulse shape with a strong intensity on the right side are mixed to produce an outgoing laser beam 2'. The emitted laser beam 2' has a pulse shape with uniform intensity throughout the left, right, up, and down.
The present invention has been described in terms of preferred embodiments based on the above description, but the present invention is not limited thereto, and various modifications and variations can be made without departing from the concept and scope of the claims, as will be readily understood by those skilled in the art to which the present invention pertains.

Claims (6)

1. A laser crystallization apparatus, comprising:
a laser generator generating an incident laser beam;
an optical system that optically converts the incident laser beam to produce an outgoing laser beam; and
a stage on which an object substrate on which an object film is formed and which is irradiated with the emitted laser beam and crystallized by the laser beam is mounted,
the optical system includes:
a pulse expanding and up-down flipping module that flips a pulse shape of the incident laser beam up and down while increasing a pulse duration of the incident laser beam,
the pulse expansion and up-down turning module comprises:
a beam splitter that reflects a part of the light beam to produce a reflected light beam and transmits the remaining part of the light beam to produce a transmitted light beam;
a first mirror and a second mirror for reflecting all the transmitted light beams in sequence and then incident on the beam splitter,
mixing a first outgoing beam that is the reflected beam reflected by the beam splitter and a second outgoing beam that is outgoing after the transmitted beam travels along a loop path that is sequentially reflected by the first mirror and the second mirror and then enters the beam splitter, thereby producing an outgoing laser beam,
the transmitted beam travels on the loop path and flips up and down.
2. The laser crystallization apparatus according to claim 1,
the beam splitter reflects 50% of the incident laser beam to produce a reflected beam and transmits the remaining 50% of the incident laser beam to produce a transmitted beam.
3. The laser crystallization apparatus according to claim 2,
the first mirror reflects the transmitted light beam transmitted through the beam splitter and enters the second mirror,
the second mirror reflects the transmitted light beam reflected by the first mirror and enters the beam splitter.
4. The laser crystallization apparatus according to claim 3, wherein 50% of the transmitted light beam re-entering the beam splitter is transmitted through the beam splitter to become the second outgoing light beam, and the remaining 50% of the transmitted light beam re-entering the beam splitter is reflected by the beam splitter to travel along the loop path again.
5. The laser crystallization apparatus according to claim 2, wherein the loop path is endlessly repeated to sequentially emit the plurality of second emitted light beams.
6. The laser crystallization apparatus of claim 1, further comprising:
and the pulse expansion and left-right turning module is used for increasing the pulse duration of the incident laser beam and turning the pulse shape of the incident laser beam left and right at the same time.
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