CN105313231A - Dividing method for single crystal substrate and single crystal substrate - Google Patents
Dividing method for single crystal substrate and single crystal substrate Download PDFInfo
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- CN105313231A CN105313231A CN201510272140.9A CN201510272140A CN105313231A CN 105313231 A CN105313231 A CN 105313231A CN 201510272140 A CN201510272140 A CN 201510272140A CN 105313231 A CN105313231 A CN 105313231A
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Abstract
The invention relates to a dividing method for a single crystal substrate and the single crystal substrate which are capable of inhibiting the generation of cutting dust. Face cracks (FC) are formed on a first main surface (S1) of the single crystal substrate (3). The first main surface (S1) of the single crystal substrate (3) is provided with a glass layer (4) covering the face cracks (FC). Crack lines (CL) extending on a surface (SF) of the glass layer (4) are formed. The steps for forming the crack lines (CL) includes: abutting a cutter tip against the surface (SF) of the glass layer (4); and moving the cutter tip abutted against the surface (SF) of the glass layer (4). Stress is applied to the single crystal substrate (3) provided with the glass layer (4), and the single crystal substrate (3) is divided along the crack lines (CL).
Description
Technical field
The present invention relates to a kind of method for dividing of monocrystal substrate.
Background technology
In the volume production of semiconductor device, on wafer, first form the multiple parts becoming semiconductor chip respectively.Then, be broken into monocrystal substrate by these parts are divided and obtain multiple semiconductor chip.Such as, according to Japanese Patent Laid-Open 2013-4528 publication (patent document 1), utilize the disc-like cutting blade rotated by silicon wafer disjunction.
[background technology document]
[patent document]
[patent document 1] Japanese Patent Laid-Open 2013-4528 publication
Summary of the invention
[inventing problem to be solved]
According to described existing method, a large amount of cutting dust can be produced when the disjunction of silicon wafer (monocrystal substrate).Cutting dust may hinder the normal disjunction of monocrystal substrate or remain on point monocrystal substrate of having no progeny as foreign matter.In addition, sometimes also for reducing cutting dust can delineate utilizing the such instrument of diamond icking tool silicon wafer and disconnect, but also be difficult to the generation fully suppressing cutting dust in the case.In addition, if diamond icking tool is used for the silicon wafer with high rigidity, the problem of diamond icking tool lifetime because of abrasion is had.
The present invention forms to solve Study on Problems as above, and its object is to provides a kind of method for dividing substantially not producing the monocrystal substrate of cutting dust.
[technological means of dealing with problems]
The method for dividing of monocrystal substrate has following steps.Prepare monocrystal substrate, there is the 1st interarea and 2nd interarea contrary with the 1st interarea.1st interarea of monocrystal substrate forms surface checking.1st interarea of monocrystal substrate arranges the glassy layer of covering surfaces be full of cracks.Be formed in the be full of cracks line that the surface of glassy layer extends.The step forming be full of cracks line comprises: point of a knife is pressed against the step on the surface of glassy layer; And on the surface of glassy layer, make the step of the point of a knife displacement compressed.By applying stress to the monocrystal substrate being provided with glassy layer, and along be full of cracks line by monocrystal substrate disjunction.
[effect of invention]
According to the present invention, monocrystal substrate utilizes to be formed at the surface checking of interarea and broken.The actual part contributing to disjunction in surface checking is fixed by the be full of cracks wire gauge on the glassy layer be formed on monocrystal substrate.Be full of cracks line on glassy layer substantially can not produced cutting dust by the displacement of point of a knife on glassy layer is not formed.Thus, according to the present invention, the cutting dust produced when substantially can eliminate monocrystal substrate disjunction.
Accompanying drawing explanation
Fig. 1 is profile (A) ~ (E) that outline represents the method for dividing of the monocrystal substrate of embodiments of the present invention 1.
The part II of Fig. 1 (D) is amplified the part sectioned view represented by Fig. 2.
Fig. 3 is that outline represents that the flow chart (A) of the formation of the method for dividing of the monocrystal substrate of embodiments of the present invention 1 and outline represent the flow chart (B) of the formation of the step of forming section be full of cracks line.
Fig. 4 is profile (A) ~ (D) that outline represents the method for dividing of the monocrystal substrate of embodiments of the present invention 2.
Fig. 5 is the profile of the method for dividing of the monocrystal substrate representing comparative example.
Fig. 6 is profile (A) and (B) that outline represents the method for dividing of the monocrystal substrate of embodiments of the present invention 3.
Fig. 7 is the flow chart that outline represents in the method for dividing of the monocrystal substrate of embodiments of the present invention 4 formation of the step forming be full of cracks line.
Fig. 8 is the profile that outline indicates the formation without the trench line under be full of cracks state.
Fig. 9 is the figure (B) under outline represents the front view (A) of the formation of the point of a knife used in the method for dividing of the monocrystal substrate of embodiments of the present invention 4 and visual angle IXB thereof.
Figure 10 is top view (A) and (B) that outline represents each step of the 1st and the 2nd step of the method for dividing of the monocrystal substrate of embodiments of the present invention 4.
Figure 11 is top view (A) and (B) that outline represents each step of the 1st and the 2nd step of the method for dividing of the monocrystal substrate of the 1st change case of embodiments of the present invention 4.
Figure 12 is the top view that outline represents the method for dividing of the monocrystal substrate of the 2nd change case of embodiments of the present invention 4.
Figure 13 is the top view that outline represents the method for dividing of the monocrystal substrate of the 3rd change case of embodiments of the present invention 4.
Figure 14 is the top view that outline represents the 1st step of the method for dividing of the monocrystal substrate of embodiments of the present invention 5.
Figure 15 is the top view that outline represents the 2nd step of the method for dividing of the monocrystal substrate of embodiments of the present invention 5.
Figure 16 is the top view that outline represents the 3rd step of the method for dividing of the monocrystal substrate of embodiments of the present invention 5.
Figure 17 is the top view that outline represents the method for dividing of the monocrystal substrate of the 1st change case of embodiments of the present invention 5.
Figure 18 is the top view that outline represents the method for dividing of the monocrystal substrate of the 2nd change case of embodiments of the present invention 5.
Figure 19 is the top view that outline represents the method for dividing of the monocrystal substrate of embodiments of the present invention 6.
Figure 20 is top view (A) and (B) that outline represents each step of the 1st and the 2nd step of the method for dividing of the monocrystal substrate of embodiments of the present invention 7.
Figure 21 is top view (A) and (B) that outline represents each step of the 1st and the 2nd step of the method for dividing of the monocrystal substrate of embodiments of the present invention 8.
Figure 22 is the top view that outline represents the method for dividing of the monocrystal substrate of the change case of embodiments of the present invention 8.
Figure 23 is the figure (B) under outline represents the front view (A) of the formation of the point of a knife used in the method for dividing of the monocrystal substrate of embodiments of the present invention 9 and visual angle XXIIIB thereof.
Detailed description of the invention
Below, based on accompanying drawing, embodiments of the present invention are described.In addition, in figures in the following, same or equivalent part is added identical with reference to numbering, and do not repeat its explanation.
(embodiment 1)
Fig. 1 (A) ~ (E) outline represents each step of the 1st ~ 5th step of the method for dividing of the silicon wafer 3 (monocrystal substrate) of present embodiment.
With reference to Fig. 1 (A), prepare the silicon wafer 3 (Fig. 3 (A): step S10) with interarea S1 (the 1st interarea) and S2 (2nd interarea contrary with the 1st interarea).Next, interarea S1 is formed surface checking FC (Fig. 3 (A): step S20).Surface checking FC is formed at multiple trickle on interarea S1 and the be full of cracks of densification.The direction of each trickle be full of cracks contained by surface checking FC also can be random.Surface checking FC can utilize gunite to be formed, such as, can be formed by carrying out sandblasting BL to interarea S1.
With reference to Fig. 1 (B), the interarea S1 of silicon wafer 3 is provided with the glassy layer 4 (Fig. 3 (A): step S30) of covering surfaces be full of cracks FC.Silicon wafer 3 and glassy layer 4 at least touch in the region being formed with trench line.Glassy layer 4 such as by glass substrate then or the coating of glass material or evaporation and arrange.When by glass substrate then and arrange glassy layer 4, be full of cracks needs to stretch on silicon wafer 3 via then material, therefore preferably uses the then material that the hardness after sclerosis is high.
With reference to Fig. 1 (C), point of a knife 51 is pressed against (Fig. 3 (B): step S42a) on the surperficial SF of glassy layer 4.Next, the surperficial SF of glassy layer 4 make the point of a knife 51 compressed be shifted (Fig. 3 (B): step S42b).The displacement of point of a knife 51 is in the enterprising line slip of surperficial SF of glassy layer 4 or rolling.Thus, produce plastic deformation at glassy layer 4, on the surperficial SF of glassy layer 4, form the trench line TL (Fig. 2) with groove shape thus.Trench line TL is produced by the plastic deformation of glassy layer 4, so now substantially can not produce cutting dust.
In the present embodiment, so-called line SL is formed by the displacement of point of a knife 51.In other words, while formation trench line TL, be full of cracks line CL (Fig. 3 (A) and (B): step S40) is formed.That is, while formation trench line TL, be full of cracks line CL is side by side formed in fact substantially.Be full of cracks line CL is the be full of cracks of stretching from the recess of trench line TL along thickness direction DT, and surperficial SF extends in wire.Be full of cracks line CL is (in Fig. 2 top) immediately below trench line TL, and the direction DC intersected with trench line TL makes the continuous phase company headquarters of glassy layer 4 break.
Next, as so-called break step, stress is applied to the silicon wafer 3 being provided with glassy layer 4.Thus, be full of cracks line CL (Fig. 2) is stretched in glassy layer 4, arrives the interarea S1 of silicon wafer 3.On interarea S1, as mentioned above larger stress is applied to the position that be full of cracks arrives.As a result, the be full of cracks being present in described position in surface checking FC becomes starting point, and be full of cracks is stretched in silicon wafer 3.
With reference to Fig. 1 (E), by the stretching, extension of the be full of cracks in described silicon wafer 3, along glassy layer 4 be full of cracks line CL and by silicon wafer 3 disjunction (Fig. 3 (A): step S50).That is, the broken one-tenth of silicon wafer 3 is as chip 3a and 3b of its part.Chip 3a and 3b remains 4a and 4b as a part for glassy layer 4 respectively.
According to the present embodiment, silicon wafer 3 utilizes to be formed at the surface checking FC of interarea S1 and broken.The actual part contributing to disjunction in surface checking FC is specified by the be full of cracks line CL on the glassy layer 4 be formed on silicon wafer 3.Be full of cracks line CL on glassy layer 4 can pass through the displacement of point of a knife 51 on glassy layer 4, and is not formed with substantially not producing cutting dust.Thus, according to the present embodiment, the cutting dust produced when substantially can eliminate silicon wafer 3 disjunction.
(embodiment 2)
In the present embodiment, the step identical with Fig. 1 (A) and (B) (embodiment 1) is first carried out.
With reference to Fig. 4 (A), next, the interarea S2 of silicon wafer 3 arranges component 11.Component 11 comprises region 11a and 11b spaced apart from each other (the 1st and the 2nd region).
With reference to Fig. 4 (B) ~ (D), carry out the step substantially identical with Fig. 1 (C) ~ (E).Thus, the broken one-tenth of silicon wafer 3 is provided with the chip 3a of region 11a and is provided with the chip 3b of region 11b.
With reference to Fig. 5, in a comparative example, to component 11 region 11a and 11b between insert the cutting blade 59 of High Rotation Speed, remove silicon wafer 3 according to the thickness of cutting blade 59, thus by silicon wafer 3 disjunction.In the case, if narrow between 11a and 11b of region, be just difficult to insert cutting blade 59 between 11a and 11b of region.In addition, in order to suppress the heat affecting caused by friction and in order to discharge cutting dust, use the cut-out of cutting blade 59 normally as using the wet type step of cutting fluid to carry out, so sometimes because moisture makes a very bad impression to component 11 or silicon wafer 3.
In contrast, according to the present embodiment, certain cutting appliance need not be inserted between 11a and 11b of region, and owing to locally not removing silicon wafer, so also cutting dust can not be produced.Thus, even if narrow between 11a and 11b of region, the disjunction of silicon wafer 3 also can be carried out between 11a and 11b of region.In addition, the step using point of a knife 51 to form be full of cracks line CL on glassy layer 4 also can be carried out as dry type step.Thus, the baneful influence that moisture causes component 11 or silicon wafer 3 can be avoided.In addition, in the present embodiment, line SL can be formed by plastic deformation at amorphous glassy layer, therefore compared with directly delineating the situation of silicon wafer 3, also can suppress the generation of cutting dust.
(embodiment 3)
Fig. 4 (D) expression of described embodiment 2 generally along thickness direction by the situation of silicon wafer 3 disjunction.In the case, the position surface of glassy layer 4 being formed be full of cracks line CL with by unanimous on the whole in plane figure for the position of the interarea S2 disjunction of silicon wafer 3.But, as in the silicon wafer 3 of monocrystal substrate, with in glass differently, the stretching, extension of be full of cracks may have orientation interdependence.Therefore, in silicon wafer 3, there is the situation chapping and stretch to the direction from the larger inclination of thickness direction.In the case, the surface of glassy layer 4 is formed the position of be full of cracks line CL and position difference in plane figure of the interarea S2 disjunction of silicon wafer 3 is become large.
With reference to Fig. 6 (A), in situations as mentioned above, consider the orientation interdependence of stretching, extension and the thickness of silicon wafer 3 of be full of cracks, the place displacement surperficial SF of glassy layer 4 being formed be full of cracks line CL just can.The position of be full of cracks line CL can be set to the position of the region W left between 11a and 11b of region in plane figure.If carry out break step, chap and to stretch obliquely relative to thickness direction in silicon wafer 3, interarea S2 arrives region W.As a result, as shown in Fig. 6 (B), the disjunction between 11a and 11b of region is carried out.
(embodiment 4)
In described embodiment 1 ~ 3, as shown in step S40 (Fig. 3 (B)), explanation be point of a knife 51 (Fig. 1 (C)) displacement time formed be full of cracks line CL (Fig. 2) situation.But, after also can forming by the displacement of point of a knife 51 the trench line TL (Fig. 2) lacking be full of cracks line CL, form be full of cracks line CL along trench line TL.
With reference to Fig. 7, in the present embodiment, replace step S40 (Fig. 4 (A)), and carry out step S40L.Specifically, under without be full of cracks state, forming trench line TL (Fig. 8) (Fig. 7: step S47), next, forming be full of cracks line CL (Fig. 2) by making be full of cracks stretch (Fig. 7: step S48).
In addition, the forming step of the be full of cracks line CL of present embodiment is different in essence from so-called break step.Break step is by making the established be full of cracks of industry stretch further at thickness direction, and is separated completely by substrate.On the other hand, the forming step of be full of cracks line CL can cause from the formation by trench line TL obtain without be full of cracks state, change to there being the state of be full of cracks.Present inventor thinks that described change is that internal stress by having without be full of cracks state is released and produces.Plastic deformation when forming trench line TL and the state such as size, directionality of internal stress produced by forming trench line TL, different when using rotating knife carry out the situation of rolling and use point of a knife to slide as present embodiment, when using point of a knife to carry out sliding, under wider delineation condition, easily produce be full of cracks.According to the investigation of present inventor, by point of a knife and using method thereof are set to the best, can easily form be full of cracks line CL along trench line TL.
First describe the point of a knife 51 being suitable for present embodiment below in detail.
With reference to Fig. 9 (A) and (B), cutting appliance 50 has point of a knife 51 and handle 52.Point of a knife 51 is not rotating knife, but is fixed on the dead knife of handle 52.
Be provided with end face SD1 (the 1st face) at point of a knife 51 and surround multiple of end face SD1.Described multiple bread is containing side SD2 (the 2nd face) and side SD3 (the 3rd face).End face SD1, side SD2 and SD3 (the 1st ~ 3rd face) face different directions from each other, and adjoin each other.Point of a knife 51 has the summit of being collaborated by end face SD1, side SD2 and SD3, and summit forms the jut PP of point of a knife 51 thus.Thus, end face SD1 is connected with jut PP.In addition, side SD2 and SD3 forms the crestal line of the sidepiece PS forming point of a knife 51.Sidepiece PS is connected with jut PP, is that wire extends from jut PP.In addition, as mentioned above, sidepiece PS is crestal line, therefore has the convex form extended in wire.
Point of a knife 51 is preferably diamond icking tool.That is, just can reduce hardness and surface roughness aspect, point of a knife 51 preferably utilizes diamond to make.Be more preferably, point of a knife 51 utilizes single-crystal diamond to make.And being preferably, is { 001} face, side SD2 and SD3 is respectively { 111} face from end face SD1 crystallography.In the case, although side SD2 and SD3 have different towards, be the crystal plane of equivalent equivalence crystallography.
In addition, also can use and the diamond of on-monocrystalline, such as, can use the polycrystalline diamond by the synthesis of CVD (ChemicalVaporDeposition) method.Or, also can use, fine-grain graphite or non-graphite shape carbon not sintered with not containing the bond materials such as iron family element the polycrystalline diamond particle of gained, utilize the sintered diamond that the bond materials such as iron family element are combined into.
Handle 52 extends along direction of principal axis AX.The mode that preferably point of a knife 51 generally along direction of principal axis AX with the normal direction of end face SD1 is installed on handle 52.
Next, the following detailed description of the method for dividing of the silicon wafer 3 of present embodiment.
First, in the same manner as embodiment 1 ~ 3, the silicon wafer 3 being provided with surface checking FC arranges glassy layer 4 (with reference to Fig. 1 (B)).With reference to Figure 10 (A), the edge surrounding the surperficial SF of glassy layer 4 comprises limit ED1 and the limit ED2 of mutual subtend.In the example shown in Figure 10 (A), edge is oblong-shaped.Thus, limit ED1 and ED2 is the limit be parallel to each other.In addition, in the example shown in Figure 10 (A), limit ED1 and ED2 is rectangular minor face.
Next, at the surperficial SF of glassy layer 4, point of a knife 51 (Fig. 9 (A)) is pressed against position N1 (Fig. 7: step S47a).Hereafter describing in detail about position N1.Compressing of point of a knife 51 carries out as follows, that is, the jut PP of point of a knife 51 is configured between limit ED1 and sidepiece PS by the surperficial SF of glassy layer 4, and is configured between jut PP and limit ED2 by the sidepiece PS of point of a knife 51.
Next, the surperficial SF of glassy layer 4 forms trench line TL.The formation of trench line TL carries out between position N1 (the 1st position) and position N3.Position N2 (the 2nd position) is between N1 and N3 of position.Thus, trench line TL is formed between N1 and N2 of position, between N2 and N3 of position.Position N1 and N3 also can away from the edge of the surperficial SF of glassy layer 4, or also can a side or two orientation in the edge of upper surface SF1.The trench line TL formed, in the case of the former away from the edge of glassy layer 4, connects with the edge of glassy layer 4 in the latter cases.
In N1 and N2 of position, position N1 is closer to limit ED1, and in N1 and N2 of position, position N2 is closer to limit ED2.In addition, in the example shown in Figure 10 (A), the limit ED1 of position N1 in ED1 and ED2 of limit, the position N2 limit ED2 in ED1 and ED2 of limit, but two sides of position N1 and N2 also can be made near either party of limit ED1 or ED2.
When forming trench line TL, point of a knife 51 is made to slide (Fig. 7: step S47b).In the present embodiment, point of a knife 51 is shifted from position N1 to position N2, is shifted further from position N2 to position N3.That is, with reference to Fig. 2 (A), namely point of a knife 51 is shifted towards direction DA towards limit ED1 to the direction of limit ED2.Direction DA corresponds to the direction projected at surperficial SF from the direction of principal axis AX of point of a knife 51 extension.In the case, handle 52 is utilized to drag point of a knife 51 on surperficial SF.
As mentioned above, making glassy layer 4 produce plastic deformation by making point of a knife 51 slide, on the surperficial SF of glassy layer 4, forming the trench line TL with groove shape thus.The slip of point of a knife 51 carries out as follows, that is, immediately below trench line TL, glassy layer 4 obtains the state that is connected continuously on the direction DC intersected with trench line TL namely without be full of cracks state (reference Fig. 8).For obtaining without be full of cracks state, the load that the slip of described point of a knife 51 need not be excessive carries out just can.
With reference to Figure 10 (B), after formation trench line TL, the be full of cracks of the glassy layer 4 of thickness direction DT (Fig. 8), along trench line TL, stretches (Fig. 7: step S48) from position N2 to position N1 (with reference to dotted arrow figure).Thus, be full of cracks line CL (Fig. 2) is formed.The formation of be full of cracks line CL is mutually intersected at position N2 by boost line AL and trench line TL and started.Object forms boost line AL after formation trench line TL.Boost line AL is the general crossing of be full of cracks with thickness direction DT, is used for the strain of the internal stress discharged near trench line TL.The formation method of boost line AL is not particularly limited, and as shown in Figure 10 (B), also the edge of surperficial SF can be formed as basic point.
When forming be full of cracks line CL (Fig. 2), with on the direction DC intersected with trench line TL immediately below trench line TL, the mode that the continuous phase company headquarters of glassy layer 4 breaks, makes the be full of cracks of the glassy layer 4 of thickness direction DT stretch along trench line TL.
In addition, in Figure 10 (B), with direction from position N2 to position N1 compared with, position N2 is difficult to form be full of cracks line CL on the direction of position N3.That is, the stretching, extension of be full of cracks line CL is ease exists direction interdependence.Thus, be full of cracks line CL may be produced to be formed between N1 and N2 of position but the phenomenon be not formed between N2 and N3 of position.Present embodiment to carry out for the purpose of disjunction between N1 and N2 of position, and therefore, must form be full of cracks line CL between N1 and N2 of position, the formation difficulty of the be full of cracks line CL but then between N2 and N3 of position can not be a problem.
Next, by carrying out so-called break step, in the same manner as embodiment 1 ~ 3, silicon wafer 3 (Fig. 9 (the A)) disjunction of glassy layer 4 will be provided with along be full of cracks line CL.
Next, the following describes the 1st ~ 3rd change case of described method for dividing.
With reference to Figure 11 (A), the 1st change case is about the intersect situation that be not enough to the opportunity that as the formation of chap line CL (Figure 10 (B)) start of boost line AL with trench line TL.With reference to Figure 11 (B), by applying to glassy layer 4 external force producing bending moment etc., the be full of cracks of thickness direction DT is stretched along boost line AL, and result is by glassy layer 4 disjunction.Thus, start to chap the formation of line CL.In addition, in described 1st change case, the strain of the internal stress near trench line TL is discharged by the separation of glassy layer 4, the formation of the line CL that starts thus to chap.Therefore, boost line AL self also can be the be full of cracks line CL formed by applying stress to trench line TL.
With reference to Figure 12, in the 2nd change case, at the surperficial SF of glassy layer 4, point of a knife 51 is pressed against position N3.When forming trench line TL, in this change case, point of a knife 51 is shifted from position N3 to position N2, is shifted further from position N2 to position N1.That is, with reference to Fig. 9 (A), namely point of a knife 51 is shifted towards direction DB towards limit ED2 to the direction of limit ED1.Direction DB corresponds to the rightabout of direction of principal axis AX in the direction that surperficial SF projects extended from point of a knife 51.In the case, utilize handle 52 that point of a knife 51 is advanced on surperficial SF.
With reference to Figure 13, in the 3rd change case, when forming each trench line TL, point of a knife 51 with the load larger than position N1, is pressed against the surperficial SF of glassy layer 4 at position N2.Specifically, using position N4 as the position between N1 and N2 of position, at the time point of the formation in-position N4 of trench line TL, improve the load of point of a knife 51.In other words, the load of point of a knife 51, for compared with the N1 of position, improves between the terminal part and position N4 and N3 of trench line TL.Thus, the load beyond terminal part can be alleviated, and easily can cause the formation of the be full of cracks line CL of position N2.
According to the present embodiment, trench line TL can be more properly utilized to form be full of cracks line CL.Reasoning reason is, the formation (Fig. 9 (A) and (B)) of point of a knife 51 and using method thereof, is most suitable for giving to glassy layer 4 internal stress easily causing be full of cracks line CL.In addition, in the same manner as embodiment 1 ~ 3, the generation of cutting dust when can suppress disjunction.
In addition, in the figure of present embodiment institute reference, limit ED1 and ED2 (the 1st and the 2nd limit) of the edge of glassy layer 4 is rectangular minor face, but they also can be rectangular long limit.In addition, the shape of edge is not limited to rectangle, such as, also can be square.In addition, the 1st and the 2nd limit is not limited to linearity, also can be curve-like.In addition, the interarea S1 of silicon wafer 3 is smooth in the drawings, but also can bend.Corresponding to this, the surperficial SF of glassy layer 4 can smoothly also can bend.
(embodiment 5)
Below, use Figure 14 ~ Figure 16 that the method for dividing of the monocrystal substrate of present embodiment is described.
With reference to Figure 14, in the present embodiment, be formed boost line AL before formation trench line TL.The formation method of boost line AL self is identical with Figure 10 (B) (embodiment 4).
With reference to Figure 15, next, point of a knife 51 is pressed against surperficial SF, then forms trench line TL.The formation method of trench line TL self is identical with Figure 10 (A) (embodiment 4).Boost line AL and trench line TL intersects mutually at position N2.
With reference to Figure 16, next, by applying the common break step of the external force producing bending moment etc. to glassy layer 4, along boost line AL by glassy layer 4 disjunction.Thus, the formation (with reference to dotted arrow in figure) of the be full of cracks line CL identical with embodiment 4 is started.
In addition, about the formation beyond described, substantially identical with the formation of described embodiment 4.
With reference to Figure 17, in the 1st change case, mutually intersected and the formation of the line CL that starts to chap at position N2 by boost line AL and line SL.
With reference to Figure 18, in the 2nd change case, when forming each trench line TL, point of a knife 51 with the power larger than position N1, is pressed against the surperficial SF of glassy layer 4 at position N2.Specifically, using position N4 as the position between N1 and N2 of position, at the time point of the formation in-position N4 of trench line TL, improve the load of point of a knife 51.In other words, the load of point of a knife 51, for compared with the N1 of position, improves between the terminal part and position N4 and N3 of trench line TL.Thus, the load beyond terminal part can be alleviated, and easily can cause the formation of the be full of cracks line CL of position N2.
(embodiment 6)
With reference to Figure 19, in the formation of each trench line TL of present embodiment, point of a knife 51 is made to cross limit ED2 from position N1 and slide.When point of a knife 51 is by limit ED2, the strain of the stress that the substrate inside immediately below trench line TL produces is released, and be full of cracks line stretches from the end of the trench line TL be positioned at the ED2 of limit to position N1.
Can fix the load that point of a knife 51 applies when forming trench line TL, when point of a knife 51 is shifted from position N1 to position N2, also can increase load point of a knife 51 applied at position N2.Such as, load is increased about 50%.The point of a knife 51 being applied with the load after increase is crossed limit ED2 and slides.In other words, the load of point of a knife 51 is increased at the terminal part of trench line TL.If point of a knife 51 arrives limit ED2, then the line that chaps stretches to position N1 from the end of the trench line TL be positioned at the ED2 of limit through position N2.Like this, when increasing load, the strain of stress also increases, and when point of a knife 51 is easily discharged by the strain of this stress during the ED2 of limit, therefore, can more properly form be full of cracks line.
In addition, about the formation beyond described, substantially identical with the formation of described embodiment 4.
(embodiment 7)
With reference to Figure 20 (A), in the method for dividing of the monocrystal substrate of present embodiment, form the trench line TL arriving limit ED2 from position N1 after the N2 of position.
With reference to Figure 20 (B), next between position N2 and limit ED2, apply the stress of the strain relief of the internal stress made near trench line TL.Thus, the formation of the be full of cracks line along trench line TL is caused.As the applying of stress, specifically, on surperficial SF, between position N2 and limit ED2, (region in figure between dotted line and limit ED2) makes the point of a knife 51 compressed slide.Till this slip proceeds to and arrives limit ED2.Point of a knife 51 preferably slides in the mode of the rail junction with the trench line TL formed at first, more preferably slides in the mode of the Orbital Overlap with the trench line TL formed at first.This length of again sliding is such as about 0.5mm.In addition, this again slides and can carry out respectively multiple trench line TL after the multiple trench line TL of formation (Figure 20 (A)), or also can carry out the formation of a trench line TL successively to each trench line TL and again slide.
Alternatively, in order to apply stress between position N2 and limit ED2, the slip again of described point of a knife 51 also can be replaced, and illuminating laser beam between position N2 on effects on surface SF and limit ED2.Thus, utilize the thermal stress produced, also can discharge the strain of the internal stress near trench line TL, the formation that can cause be full of cracks line thus starts.
In addition, about the formation beyond described, substantially identical with the formation of described embodiment 4.
(embodiment 8)
With reference to Figure 21 (A), in the method for dividing of the monocrystal substrate of present embodiment, point of a knife 51 is shifted from position N1 to position N2, is shifted to position N3 further, form the trench line TL of the edge away from surperficial SF thus.The formation method of trench line TL self is substantially identical with Figure 10 (A) (embodiment 4).
With reference to Figure 21 (B), carry out the stress identical with Figure 20 (B) (embodiment 7 or its change case) and apply.Thus, the formation of the be full of cracks line along trench line TL is caused.
In addition, about the formation beyond described, substantially identical with the formation of described embodiment 4.
With reference to Figure 22, as the change case of the step of Figure 21 (A), when forming trench line TL, point of a knife 51 also can be made to be shifted from position N3 to position N2, to be then shifted from position N2 to position N1.
(embodiment 9)
With reference to Figure 23 (A) and (B), in described each embodiment, also can replace point of a knife 51 (Fig. 9 (A) and (B)), and use point of a knife 51v.Point of a knife 51v has the cone shape containing summit and taper seat SC.The jut PPv of point of a knife 51v is made up of summit.The sidepiece PSv of point of a knife is formed from summit along the imaginary line extended at taper seat SC (dotted line of Figure 23 (B)).Thus, sidepiece PSv has the convex form extended in wire.
[explanation of symbol]
3 silicon wafers (monocrystal substrate)
4 glassy layers
11 components
51,51v point of a knife
AL boost line
CL chaps line
FC surface checking
S1 interarea (the 1st interarea)
S2 interarea (the 2nd interarea)
SF surface
SL rules
TL trench line
Claims (8)
1. a method for dividing for monocrystal substrate, possesses following steps: prepare monocrystal substrate, have the 1st interarea and 2nd interarea contrary with described 1st interarea;
Described 1st interarea of described monocrystal substrate forms surface checking;
On described 1st interarea of described monocrystal substrate, the glassy layer covering described surface checking is set; And
Be formed in the be full of cracks line that the surface of described glassy layer extends; And the step forming described be full of cracks line comprises:
Point of a knife is pressed against the step on the surface of described glassy layer; And
The surface of described glassy layer makes the step of the described point of a knife displacement compressed; And the method for dividing of described monocrystal substrate also possesses following steps:
By applying stress, along described be full of cracks line by described monocrystal substrate disjunction to the described monocrystal substrate being provided with described glassy layer.
2. the method for dividing of monocrystal substrate according to claim 1, the step wherein forming described surface checking uses gunite to carry out.
3. the method for dividing of monocrystal substrate according to claim 1, wherein said monocrystal substrate comprises silicon substrate.
4. the method for dividing of monocrystal substrate according to claim 1, before the step of monocrystal substrate described in disjunction, also possesses the step that component is set on described 2nd interarea of described monocrystal substrate, described component comprises the 1st region spaced apart from each other and the 2nd region, by the step of monocrystal substrate described in disjunction, and described monocrystal substrate is divided the part being broken into and being provided with described 1st region and the part being provided with described 2nd region.
5. the method for dividing of monocrystal substrate according to any one of claim 1 to 4, by the step making described point of a knife be shifted, produce plastic deformation at described glassy layer, on the described surface of described glassy layer, form the trench line (TL) with groove shape thus, and
Described be full of cracks line is formed forming described trench line while.
6. the method for dividing of monocrystal substrate according to any one of claim 1 to 4, the step wherein making described point of a knife be shifted is included in the step that the described surface of described glassy layer makes described point of a knife slide, by the step making described point of a knife slide, plastic deformation is produced at described glassy layer, thus on the described surface of described glassy layer, form the trench line with groove shape, and the step making described point of a knife slide is carried out as follows, namely, immediately below described trench line, it is without be full of cracks state that described glassy layer obtains the state be connected continuously on the direction intersected with described trench line,
The step forming described be full of cracks line comprises following steps, that is, with immediately below described trench line, the mode that the continuous phase company headquarters of described glassy layer breaks on the direction intersected with described trench line, makes the be full of cracks of described glassy layer stretch along described trench line.
7. a monocrystal substrate, has the 1st interarea and 2nd interarea contrary with described 1st interarea,
Described 1st interarea of described monocrystal substrate forms surface checking,
Described 1st interarea of described monocrystal substrate has the glassy layer covering described surface checking.
8. monocrystal substrate according to claim 7, wherein said monocrystal substrate comprises silicon substrate.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014129853A JP6303861B2 (en) | 2014-06-25 | 2014-06-25 | Single crystal substrate cutting method |
| JP2014-129853 | 2014-06-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105313231A true CN105313231A (en) | 2016-02-10 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510272140.9A Pending CN105313231A (en) | 2014-06-25 | 2015-05-25 | Dividing method for single crystal substrate and single crystal substrate |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6303861B2 (en) |
| KR (1) | KR20160000838A (en) |
| CN (1) | CN105313231A (en) |
| TW (1) | TW201613834A (en) |
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| CN109715570A (en) * | 2016-10-14 | 2019-05-03 | 日本电气硝子株式会社 | The manufacturing method of glass plate |
| TWI715718B (en) * | 2016-02-26 | 2021-01-11 | 日商三星鑽石工業股份有限公司 | Breaking method of brittle substrate |
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| JP2007039302A (en) * | 2005-08-05 | 2007-02-15 | Matsushita Electric Ind Co Ltd | Method and apparatus for cutting glass substrate |
| JP5310787B2 (en) * | 2011-05-31 | 2013-10-09 | 三星ダイヤモンド工業株式会社 | Scribing method |
| JP2013004528A (en) | 2011-06-10 | 2013-01-07 | Panasonic Corp | Semiconductor device and manufacturing method of the same |
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- 2014-06-25 JP JP2014129853A patent/JP6303861B2/en not_active Expired - Fee Related
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- 2015-05-12 TW TW104115082A patent/TW201613834A/en unknown
- 2015-05-19 KR KR1020150069670A patent/KR20160000838A/en unknown
- 2015-05-25 CN CN201510272140.9A patent/CN105313231A/en active Pending
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| CN101687342A (en) * | 2007-07-13 | 2010-03-31 | 三星钻石工业股份有限公司 | Method for processing brittle material substrate and crack forming apparatus used in the method |
| CN101910076A (en) * | 2007-12-27 | 2010-12-08 | 三星钻石工业股份有限公司 | Method for forming cracks on substrate made of brittle material |
| CN102026925A (en) * | 2008-04-14 | 2011-04-20 | 三星钻石工业股份有限公司 | Method for processing fragile material substrate |
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| CN109715570A (en) * | 2016-10-14 | 2019-05-03 | 日本电气硝子株式会社 | The manufacturing method of glass plate |
| CN109715570B (en) * | 2016-10-14 | 2021-09-28 | 日本电气硝子株式会社 | Method for manufacturing glass plate |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2016009773A (en) | 2016-01-18 |
| JP6303861B2 (en) | 2018-04-04 |
| KR20160000838A (en) | 2016-01-05 |
| TW201613834A (en) | 2016-04-16 |
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