CN105307304B - OPV-driven OLED light source and preparation method thereof - Google Patents
OPV-driven OLED light source and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 70
- 238000000034 method Methods 0.000 claims abstract description 14
- 239000011368 organic material Substances 0.000 claims abstract description 11
- 239000000243 solution Substances 0.000 claims description 20
- 238000004528 spin coating Methods 0.000 claims description 12
- 230000005540 biological transmission Effects 0.000 claims description 11
- 238000002347 injection Methods 0.000 claims description 9
- 239000007924 injection Substances 0.000 claims description 9
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 claims description 8
- 238000000137 annealing Methods 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 5
- 230000008020 evaporation Effects 0.000 claims description 5
- 238000004020 luminiscence type Methods 0.000 claims description 5
- 230000004048 modification Effects 0.000 claims description 5
- 238000012986 modification Methods 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 4
- 230000027756 respiratory electron transport chain Effects 0.000 claims description 4
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 claims description 3
- 238000010549 co-Evaporation Methods 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- -1 oxadiazole class compounds Chemical class 0.000 claims description 3
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 claims description 3
- 238000002207 thermal evaporation Methods 0.000 claims description 3
- DHDHJYNTEFLIHY-UHFFFAOYSA-N 4,7-diphenyl-1,10-phenanthroline Chemical compound C1=CC=CC=C1C1=CC=NC2=C1C=CC1=C(C=3C=CC=CC=3)C=CN=C21 DHDHJYNTEFLIHY-UHFFFAOYSA-N 0.000 claims description 2
- 239000005725 8-Hydroxyquinoline Substances 0.000 claims description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- YXLXNENXOJSQEI-UHFFFAOYSA-L Oxine-copper Chemical compound [Cu+2].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 YXLXNENXOJSQEI-UHFFFAOYSA-L 0.000 claims description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- XSCHRSMBECNVNS-UHFFFAOYSA-N benzopyrazine Natural products N1=CC=NC2=CC=CC=C21 XSCHRSMBECNVNS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 125000004093 cyano group Chemical group *C#N 0.000 claims description 2
- 238000003780 insertion Methods 0.000 claims description 2
- 230000037431 insertion Effects 0.000 claims description 2
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 2
- 229960003540 oxyquinoline Drugs 0.000 claims description 2
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 125000003003 spiro group Chemical group 0.000 claims description 2
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 claims description 2
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 claims description 2
- 238000004146 energy storage Methods 0.000 abstract description 6
- 230000008901 benefit Effects 0.000 abstract description 5
- 230000007613 environmental effect Effects 0.000 abstract description 4
- 230000008569 process Effects 0.000 abstract description 3
- 238000005286 illumination Methods 0.000 description 9
- 238000011160 research Methods 0.000 description 8
- 238000003860 storage Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 229920001197 polyacetylene Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000010025 steaming Methods 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- 241000208340 Araliaceae Species 0.000 description 1
- 229920000144 PEDOT:PSS Polymers 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000010307 cell transformation Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229920002457 flexible plastic Polymers 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- WCPAKWJPBJAGKN-UHFFFAOYSA-N oxadiazole Chemical compound C1=CON=N1 WCPAKWJPBJAGKN-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000007784 solid electrolyte Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
- Y02B20/30—Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]
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- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses an OPV-driven OLED light source and a preparation method thereof. According to the OPV-driven OLED light source and a preparation method thereof, an OPV collects sunlight and stores the sunlight in an energy storage device and a controller; the energy storage device and the controller are made of organic materials; the energy storage device is assembled to the controller, the OPV and an OLED, and the OPV, the energy storage device and the OLED are all transparent or semitransparent devices, and therefore, a tabular integrated system can be formed through a laminated assembly and embedded assembly combined mode; the energy storage device automatically provides power for the OLED under the control of the controller, and therefore, light emission of the OPV-driven OLED light source can be realized; the active layer of the OPV is of a two-layer structure and is made of narrow band gap materials; and an object material is doped in a subject molecular material in a low-concentration manner so that the double emitting layers of the OLED can be formed. According to the integrated system in the invention, full organic materials are adopted to make the integrated system. The OPV-driven OLED light source and the preparation method thereof have the advantages of low preparation cost, environmental friendliness and simple process. With the OPV-driven OLED light source and the preparation method thereof adopted, a new idea can be provided for lighting industry in the future. Prepared finished products have a wide use range.
Description
Technical field
The present invention relates to a kind of artificial light source and preparation method thereof, more particularly to a kind of solar powered driving semiconductor
Luminous light source of device and preparation method thereof, is applied to green lighting technique field.
Background technology
Organic solar batteries (OPV) and Organic Light Emitting Diode (OLED) all originate from inorganic semiconductor field.Since
Americanized scholar A. G. MacDiarmid in 1977, physicist A. J. Heeger and the chemist H. of Japan
The polyacetylene (PA) of the doping iodine that Shirakawa has found jointly has metallic character, and organic semiconductor industry has obtained huge
Development.Environmentally friendly due to its, raw material is easy to get, and many advantages, such as can freely compose necessary for human structure, various countries are to organic half
Conductor industry is all greatly paid close attention to.
OPV experienced from individual layer, and to bilayer the development course of bulk heterojunction structure is arrived again.Donor in bulk heterojunction OPV/receive
Body (D/A) interface distributions form the continuous phase structure of interpenetrating networks in whole photoactive layer, overcome double layer heterojunction device and receive
The defect that exciton diffusion length is limited, can maximize exciton dissociation efficiency so as to obtain maximum density of photocurrent.Bulk heterojunction
Active layer can be thicker than the active layer of double layer heterojunction, so as to prevent pin hole caused by short circuit phenomenon generation.Especially
Simple efficient bulk heterojunction OPV has tempting development prospect.Reported from 2011 a kind of containing extremely low donor concentration
Bulk heterojunction OPV is also called organic schottky knot, and its PCE reaches 5.2%, due to its simple structure and presents the photoelectricity of superelevation
Stream, the research of this respect causes extensive concern both domestic and external.China also has been achieved with present to the research of organic solar batteries
Many achievements, wherein, yellow spring brightness etc. yields good result in terms of the optimization of organic dyestuff；Xiao Xurui etc. is in semisolid
The aspects such as electrolyte make some progress；Broad-mouthed receptacle for holding liquid celebrating ripple etc. has been innovated at the aspect such as solid electrolyte and array electrode；Wear
Song Yuan etc. carried out compared with systematic research to dye-sensitized solar battery assembly and encapsulation technology, and organic solar batteries grind
Study carefully with application have made great progress, this makes utilization of the mankind to this solar energy step into major step forward, be it is organic too
Positive energy battery moves towards market and have accumulated experience from laboratory. and its market prospects will be very huge.The not bright Hough polymer of Germany should
A kind of novel carriers material is currently being deployed with the researcher of research institute：Organic solar batteries component is embedded in health by them
A kind of special ultra-thin glass that rather (Coming) company provides is sealed, and can withstand up to 400 °C of processing temperature.Processing
Into the thick thin slices of only 100um, the about thickness of 1 paper.This glass is not only superpower, not easy fracture. but also in solid state
It is flexible.Using this material, scientific research personnel has made first effective organic solar electricity in " piece is to piece " technique
Pond component.Researcher and trial " volume to volume " technique, attempt succeeding first, and computer MSR Information system has produced less base
The homogeneous strata of board size.Experiment basis are provided for energy final production high intensity, high performance organic solar batteries component.
Organic electroluminescence device (OLED, Organic light-emitting diode) is because with low cost, active
The features such as luminous, all solid state, low voltage drive, high efficiency, fast response time, visual angle width and achievable Flexible Displays are aobvious in flat board
Show and solid-state illumination field is extensively and profoundly studied, developed rapidly, occur in that various commercializations are attempted and product.In vain
Color OLED is used to illuminate, and is a very promising application.In order to improve electric light utilization rate, energy saving and protection ring
Border, efficient " green " light source in the urgent need to developing energy-saving and environmental protection.Meanwhile, OLED has very big in general illumination field
Advantage, lights because its colour rendering is high and belongs to face, and the soft light of nature can not only be presented, and OLED technology is also constantly entering
Step, either its area size, luminous efficiency or life-span are all constantly being lifted, and also have in shape-designing sizable
Play space.By the second half year in 2011, NEC, Konica Minolta, Toshiba, Panasonic Deng Gejia great factories, land
Continue the sample that OLED illuminations are put on display in multinomial exhibition, or even part manufacturer has announced future products blueprint.2012 flanges
Ke Fu exhibitions OLED luminaire shows OLED into companies such as new highlight, Ou Silang, Philip, LG, Novaled, Long Da, Sumitomo Chemicals
Illuminating product.On March 30th, 2012, have started to be illuminated using OLED in Tokyo Metro " free mound station "." free mound station " pacifies
The OLED illuminating lamps of dress are PANASONIC production, and luminous efficiency is 30lm/W, and the panel of 1 piece of 8cm square is about 30,000 yen.From
In April, 2011 starts selling the KANEKA companies of oled panel and will promote product to places such as dining rooms.The said firm's plan promotes
The purposes such as StoreFront and display adopts oled panel, promotes in the general lighting to house and office building in 2015, and proposes
The year two thousand twenty makes the target that sales volume reaches 100,000,000,000 yen.The Lumiotec companies that the enterprise investment such as Mitsubishi Heavy Industries Ltd and rom is set up
The oled panel of luminous efficiency 40lm/W is started selling from March, 2012, the panel of 14.5cm square only sells 30,000 yen.
It is applied to the general lighting towards family and list marketing by NEC Lighting Incs also by full phosphor material is developed.Philip
Released the product of transparent penetration in 2013, the product for releasing multicolours and deflection in 2018, general illumination also will be
The luminous efficiency of 2018 reaches 130lm/W.
It is most of both at home and abroad in addition to the related directions such as German automobiles corporate investment multi-million dollar research intelligent automobile glass
Research all concentrates on the research of independent OPV or OLED, and these are studied and cause OPV phototranstormation efficiencies to reach more than 10%, the OLED longevity
Life reaches more than 50000 hours, and maximum brightness can reach 10,000,000 more than cd/m2, make but without integrated use full stress-strain
The idea of light source device and product are produced, existing green light source generally by being attached by wire by different devices,
Using not enough facilitating, integrated level is than relatively low.
The content of the invention
In order to solve prior art problem, it is an object of the invention to overcome the shortcomings of that prior art is present, there is provided a kind of
OLED light source and preparation method thereof that OPV drives, the energy storage based on OPV and OLED and illumination constitute integrated system, using having entirely
Machine material, OPV and OLED components are connected by common electrode layer, collectively constitute two parts of a device, and memory and control
Device processed then makes draw-in groove form, connects and control the work of whole device.So that device makes the translucent of high integration
Integrated system, preparation cost is relatively low, environmental friendliness, process is simple, and for following illuminating industry a kind of brand-new thinking is provided.
Purpose is created to reach foregoing invention, using following technical proposals：
The OLED light source that a kind of OPV drives, including the transparency carrier of rigidity or flexibility, OPV components, common electrode layer,
OLED luminescence components and OPV controllers and memory, OPV components collection solar energy is luminous for OLED by common electrode layer
Assembly power supply, and store in OPV controllers and memory, OPV controllers and memory are made up of organic material, and
Be made as draw-in groove form, make each component carry out assembling linking, by assembling by transparency carrier, OPV components, common electrode layer,
OLED luminescence components and OPV controllers and memory are all transparent or semitransparent device, and by stacking embedded mode shape is combined
Into integrated system, controller also controls energy accumulator from trend OLED assembly power supply, so as to realize that OPV drives OLED light source to send out
Light, OPV components are made up of successively electrically-conductive backing plate, first electrode decorative layer, active layer, second electrode decorative layer and electrode layer, living
Property layer has double-decker, and active layer is made up of low energy gap width material, and OLED is successively by common electrode layer, electric transmission
Layer, double emission layers, hole transmission layer, hole injection layer and cathode layer are folded to be assembled, and double emission layers are by guest materials with low dense
Degree is entrained in host molecule material and is formed, and wherein problem material doping content in host molecule material is 0.1-5%.
Above-mentioned OPV, above-mentioned OLED and above-mentioned OPV controllers and memory are all preferably made using flexible material.
It is preferred that in above-mentioned OLED, being respectively provided with the electrode modification layer of common electrode layer and cathode layer.
The material of the hole transmission layer of above-mentioned OLED preferably adopts N, N-bis- (1-naphyl)-N, N0-diphenyl-1,
1-biphenyl-4,40-diamine (NPB), TPD and its derivative, Spiro types hole mobile material or
Triphenylamine type hole mobile materials.
The electron transport layer materials of above-mentioned OLED preferably adopt 4,7-Diphenyl-1,10-phenanthroline
(Bphen), andlithium quinolate (Liq), 8-hydroxyquinoline aluminium (Alq3) metal complexes, oxadiazole classes
Compound, quinoxaline compound, the polymer of cyano-containing, other nitrogen-containing heterocycle compounds, organosilicon material, perfluorinated material or
Organic boron material.
The cathode layer materials of above-mentioned OLED are preferably using Al, Ag or hydronalium.
The material of the luminescent layer of above-mentioned OLED is preferably using the host and guest's doped system material with energy transmission, many doping systems
Commons material, co-host system material or and undoped system material.
The common electrode layer of above-mentioned OLED is preferably using ZnO, AZO, FTO or sheet metal.
The preparation method of the OLED light source that a kind of OPV of the present invention drives, it is characterised in that comprise the steps：
1. the preparation of OPV devices：
A. compound concentration for 0.15-3.2mg/ml ZnO solution, with magnetic stirrer it is uniform after, control in addition
ZnO solution spin coatings thickness for 30-50nm ZnO film on electrically-conductive backing plate, formed first electrode decorative layer；
B. P3HT is prepared:The DSB solution of IC60BA, molar concentration rate is maintained at 1:0.3-1:In the range of 1.8, thereafter with
700-1000 rev/min of speed is spin-coated on DSB solution on first electrode decorative layer；
C. spin coating PEDOT:PSS solution is annealed afterwards as the active layer of sub- battery under the conditions of 100-150 DEG C
10min；
D. continue the spin coating ZnO film on active layer after annealing, form second electrode decorative layer, then 100-150 DEG C
Under the conditions of anneal 10min；
E. concentration is adopted for 1:2-1:4 PDTP-DFBT:The DCB solution of PCBM, subsequently with 1500 revs/min of speed
It is spin-coated on second electrode decorative layer；
F. and then under vacuum continue to be deposited with MoO3/ Al electrodes, and utilize it as shared connection electrode, here
On the basis of continue prepare OLED；
2. the preparation of OLED：Under vacuum and in MoO3On/Al electrode bases, electric transmission is sequentially prepared
Layer, double emission layers, hole transmission layer, hole injection layer and cathode layer, speed control exists in 0.01-0.15 nm/s, THICKNESS CONTROL
20-150 nm, using the technique of vacuum thermal evaporation, under vacuum conditions, adopt co-evaporation method to mix guest materials with low concentration
Miscellaneous mode carries out uniform mixing evaporation in host molecule material, and so as to prepare the double emission layers of doping, wherein guest materials is being led
Doping content is 0.1- 5% in body molecular material, and cathode layer is then prepared under vacuum；When preparing emission layer, preferred control
Atmospheric condition processed is nitrogen atmosphere；
3. the assembling of the OLED light source that OPV drives：Using OPV controllers and memory made by organic material, electricity is left
Pole, remaining each part such as OPV and OLED components are attached thereto and are controlled by modes such as insertions, by being laminated and being embedded in assembling side
Formula forms the integrated system of tabular.
The present invention compared with prior art, with following substantive distinguishing features and remarkable advantage is obviously projected：
1. present invention innovation adopts novel laminated OPV structures, by introduce the modification of new small gap material and ZnO come
Device heating and auger recombination are reduced, PCE is improved；
2. integrated use full stress-strain material of the present invention makes light source device, and OPV and OLED is carried out effectively integrated, reality
The conversion of existing optical-electrical-optical, replaces traditional lighting installation, realizes a kind of " green " energy truly；
3. on the effectively utilizes earth of the present invention resource luminous energy the abundantest realizing to human life style more useful
The illumination of organic electroluminescent, compares with conventional incandescent with LED/light source, and this light source is softer to human eye, photochromic purer,
Spectrum is more healthy, it is not necessary to which additional electrical energy is provided, to using great realistic meaning；
4. compare with inorganic solar cell with traditional inorganic storage mode, the present invention adopts organic material storage energy
With more advantages, make and waste treatment whole process is pollution-free, and it is high to store light efficiency；
5. the OLED light source that OPV of the present invention drives towards environment-friendly type illumination daily use field, such as vehicle dormer window illumination,
Electrical network covers imperfection region home lighting, work and uses ring protection eye light field.
Description of the drawings
Fig. 1 is that the OPV of the embodiment of the present invention one drives the luminous integrated device schematic diagrams of OLED.
Fig. 2 is the device each component schematic diagram of the embodiment of the present invention one.
Fig. 3 is the integrated device schematic diagram of the embodiment of the present invention one.
Specific embodiment
Details are as follows for the preferred embodiments of the present invention：
Embodiment one：
In the present embodiment, referring to Fig. 1～Fig. 3, the OLED light source that a kind of OPV drives, including rigid transparency carrier a,
OPV component b, common electrode layer c, OLED component d and OPV controller and memory e, transparency carrier a adopt rigid ITO bases
Plate, OPV devices b collection solar energies convert light energy into electric energy by controller, are the luminous groups of OLED by common electrode layer c
Part d powers, and stores in OPV controllers and memory e, and OPV controllers and memory e are made up of organic material, leads to
Assembling is crossed by OPV controllers and memory e and OPV component b, OLED component d effectively connections, OPV controllers and memory e
Transparent devices are all with OPV component b, OLED component d, the integrated system that embedded assembling mode forms tabular is assembled by stacking
System, OPV controllers and memory e, power in the case of illumination deficiency from trend OLED d, so as to realize what OPV drove
OLED light source lights, and OPV devices b is successively by electrically-conductive backing plate, first electrode decorative layer, active layer, second electrode decorative layer and same
Constituted with electrode layer, active layer has double-decker, and active layer is made up of low energy gap width material, OLED d is successively by altogether
Assembled with electrode layer, electron transfer layer, double emission layers, hole transmission layer, hole injection layer and negative electrode layer stackup, double transmittings
Layer is formed with low concentration doping by guest materials in host molecule material, and wherein guest materials adulterates in host molecule material
Concentration is 0.5%.OPV controllers and memory e are made using organic material, draw-in groove form is made, electrode use is left in draw-in groove
To connect and control different components, by OPV components b and OLED component d are integrated and the OPV controllers with draw-in groove form and storage
Device e combines, and forms the integrated system of tabular.
In the present embodiment, referring to Fig. 1～Fig. 3, a kind of preparation method of the OLED light source that the present embodiment OPV drives, bag
Include following steps：
1. the preparation of OPV devices：
A. a length of 2 cm is made, the rigid ito substrate of a width of 1.5 cm, compound concentration is 0.15 mg/ml
ZnO solution, due to device performance it is very sensitive to concentration and uniformity and film layer defect, so after solution allocation, using magnetic force
Agitator long-time uniform stirring, after stirring, it is the ZnO film of 30 nm in conduction that ZnO solution spin coating thickness is controlled in addition
On substrate, first electrode decorative layer is formed；
B. P3HT is prepared:The DSB solution of IC60BA, molar concentration rate is maintained at 1:0.3, thereafter with 800 revs/min
Speed is spin-coated on DSB solution on first electrode decorative layer；
C. spin coating PEDOT:Used as the active layer of sub- battery, anneal afterwards PSS solution 10min under the conditions of 1000 DEG C；
D. continue the spin coating ZnO film on active layer after annealing, form second electrode decorative layer, then 110 DEG C of conditions
10 min of lower annealing；
E. concentration is adopted for 1:2 PDTP-DFBT:The DCB solution of PCBM, subsequently with 1500 revs/min of speed spin coating
On second electrode decorative layer；
F. and then under vacuum continue to be deposited with MoO3/ Al common electrodes；
2. the preparation of OLED：Electron transfer layer, double emission layers, hole biography are sequentially prepared on common electrode substrate
Defeated layer, hole injection layer and cathode layer, arrange the interface such as active layer and ETL, HTL and are allowed to level-density parameter, are steamed using Vacuum Heat
The technique of plating, under vacuum conditions, adopt co-evaporation method by guest materials in low concentration doping mode in host molecule material,
Uniform mixing evaporation is carried out, so as to prepare the double emission layers of doping, wherein guest materials doping content in host molecule material is
0.5%, after cathode layer is prepared by way of common steaming under vacuum, by adjusting evaporation rate doping content is controlled；
3. the assembling of the OLED light source that OPV drives：Energy accumulator is made using organic material, by OPV components b and
OLED components d is connected with the electrode tip of OPV controllers and memory e, make the signal end of controller respectively with OPV component b,
OPV controllers and memory e and OLED component d connect, and by stacking the collection that embedded assembling mode forms tabular is assembled
Into system, Fig. 2 is seen.
Existing OLED is generally all surface-emitting type, but because matrix waveguide mode and organic matter waveguide mode
Luminous presence, most of light is depleted, and this constrains the luminous efficiency of device significantly.In order to improve the light emission rate of device, this
Embodiment adopts Fabrication of nanostructures substrate, the loss of matrix waveguide mode and organic matter waveguide mode will be reduced, by Waveguide
Effectively utilizes are got up, and substantially increase the luminous efficiency of device.In addition the present embodiment adopts double emission layer white light OLED devices,
Using the technique of vacuum thermal evaporation, the double emission layers of doping are prepared under high vacuum environment.Adopt the technology of common steaming by object with low
In host molecule, uniform mixing is deposited with doped in concentrations profiled, so as to build double emission layers.
Referring to Fig. 2, due to white light allotment light emitting layer thickness is matched it is very sensitive with doping content, therefore film thickness with
Doping speed is strictly controlled by；Double emission layer doping contents of OLED components d manufactured in the present embodiment are less, therefore adopt
Use low rate hot evaporation；Because double emission layer doping contents are less, object is more sensitive to moisture, is typically easier in absorption air
Moisture, therefore source material should as far as possible avoid long-time in atmosphere from exposing, in nitrogen added material；Due to injection barrier it is straight
Impact device cut-in voltage is connect, decorative layer is set in OLED structure electrode is modified.Manufactured in the present embodiment
Injection decorative layer is added in WOLED with double emission layers, reduces injection barrier, reduce driving voltage to match OPV drivings, and
Greatly improve white light color stability and device efficiency.
Traditional bi-layer devices absorb shortwave from the big active layer of first band gap width, and active layer thereafter is little from band gap
Material absorbs long wave, and for reducing device heating and auger recombination PCE is improved, but possesses low open-circuit voltage and outer in long-wavelength region
The selection of the small gap material of quantum efficiency is limited, limits the raising of solar cell transformation efficiency.The present embodiment is using new
Type laminated construction solar cell, introduces a kind of low energy gap width material and prepares OPV devices, improves PCE.The present embodiment is using molten
Liquid spin coating method, is sequentially prepared decorative layer and active layer, and common electrode and electrode modification layer, ginseng are finally deposited with vacuum environment
See Fig. 2, Fig. 3.
In the present embodiment, referring to Fig. 1～Fig. 3, the OLED light source integrated device that the present embodiment OPV drives is translucent
Type, realizes multipart matching and the system integration, environmental friendliness；OPV components b optimizes through active layer, electrode, interface etc.,
Efficiency is more than 10%；The close 50000cd/m of OLED luminosity2, OLED quantum efficiencies close 20%, continuously work 200 hours property
Can be without degeneration.Regulated and controled with barrier height by the active layer material thickness of OPV components b manufactured in the present embodiment, make light absorbs model
Enclose and be optimal with intensity enhancing, light energy conversion efficiency reaches highest.OPV controllers and memory e are all organic material, and
It is OLED illuminalive power-supplies that storage electric energy is in no light OPV automatically.The organic OPV of the present embodiment drive organic OLED light source be
OLED during system is integrated meets high brightness, low turn-on voltage, long-life requirement.The system integration is each intermodule
Matching, luminous energy memory is powered for illuminating device automatically under non-illuminated conditions.
Embodiment two：
The present embodiment is essentially identical with embodiment one, is particular in that：
In the present embodiment, using transparency electrode should be deposited on the flexible plastic substrates with higher light transmittance prepare it is transparent
Electrode base board.The present embodiment organic solar batteries are got up by converting luminous energy acquisition electrical energy for storage so that needing to utilize
Discharge driving OLED when energy again, because all parts can make organic products, each part of the invention can be made
It is flexible and transparent into being fabricated to.
The embodiment of the present invention is illustrated above in conjunction with accompanying drawing, but the invention is not restricted to above-described embodiment, can be with
The purpose of innovation and creation of the invention makes various changes, under all Spirit Essence and principle according to technical solution of the present invention
Change, modification, replacement, the combination or simplified made, should be equivalent substitute mode, as long as meeting the goal of the invention of the present invention,
The know-why of the OLED light source driven without departing from OPV of the present invention and preparation method thereof and inventive concept, belong to this
Bright protection domain.
Claims (10)
1. the OLED light source that a kind of OPV drives, it is characterised in that：Transparency carrier (a), OPV components including rigidity or flexibility
(b), common electrode layer (c), OLED luminescence components (d) and OPV controllers and memory (e), OPV components (b) collection
Solar energy is OLED luminescence components (d) power supplies by common electrode layer (c), and is stored to OPV controllers and memory (e)
In, the OPV controllers and memory (e) are made up of organic material, and are made as draw-in groove form, make each component carry out group
Dress linking, is controlled transparency carrier (a), OPV components (b), common electrode layer (c), OLED luminescence components (d) and OPV by assembling
Device processed and memory (e) are all transparent or semitransparent device, combine embedded mode by stacking and form integrated system, the control
Device processed also controls the memory (e) and powers from OLED components (d) described in trend, so as to realize that OPV drives OLED light source to light,
OPV components (b) is successively by electrically-conductive backing plate, first electrode decorative layer, active layer, second electrode decorative layer and electrode layer group
Into the active layer has double-decker, and the active layer is made up of low energy gap width material, and the OLED (d) is successively
Assembled by common electrode layer, electron transfer layer, double emission layers, hole transmission layer, hole injection layer and cathode layer are folded, it is described
Double emission layers are formed with low concentration doping by guest materials in host molecule material, and wherein guest materials is in host molecule material
Middle doping content is 0.1-5%.
2. the OLED light source that according to claim 1 OPV drives, it is characterised in that：OPV devices (b), the OLED devices
Part (d) and OPV controllers and memory (e) are all fabricated from a flexible material.
3. the OLED light source that OPV according to claim 1 or claim 2 drives, it is characterised in that：In the OLED (d), point
Not She Zhi common electrode layer and cathode layer electrode modification layer.
4. the OLED light source that OPV according to claim 1 or claim 2 drives, it is characterised in that：The hole of OLED components (d)
The material of transport layer is N, N-bis- (1-naphyl)-N, N0-diphenyl-1,1-biphenyl-4,40-diamine
(NPB), TPD and its derivative, Spiro types hole mobile material or triphenylamine type hole mobile materials.
5. the OLED light source that OPV according to claim 1 or claim 2 drives, it is characterised in that：The electronics of the OLED (d)
Transmission layer material is 4,7-Diphenyl-1,10-phenanthroline (Bphen), andlithium quinolate
(Liq), 8-hydroxyquinoline aluminium (Alq3) metal complexes, oxadiazole class compounds, quinoxaline compound, cyano-containing it is poly-
Compound, other nitrogen-containing heterocycle compounds, organosilicon material, perfluorinated material or organic boron material.
6. the OLED light source that OPV according to claim 1 or claim 2 drives, it is characterised in that：The negative electrode of the OLED (d)
Layer material is Al, Ag or hydronalium.
7. the OLED light source that OPV according to claim 1 or claim 2 drives, it is characterised in that：The OLED (d) it is luminous
Layer material be the host and guest's doped system material with energy transmission, many doped system materials, co-host system material or
And undoped system material.
8. the OLED light source that OPV according to claim 1 or claim 2 drives, it is characterised in that：The OLED (d) it is transparent
Electrode layer is ITO, ZnO, AZO or FTO.
9. described in a kind of claim 1 OPV drive OLED light source preparation method, it is characterised in that comprise the steps：
1. the preparation of OPV components：
A. compound concentration for 0.15-3.2mg/ml ZnO solution, with magnetic stirrer it is uniform after, in addition control ZnO solution
Spin coating thickness for 30-50nm ZnO film on electrically-conductive backing plate, formed first electrode decorative layer；
B. P3HT is prepared:The DSB solution of IC60BA, molar concentration rate is maintained at 1:0.3-1:In the range of 1.8, thereafter with 700-
1000 revs/min of speed is spin-coated on DSB solution on first electrode decorative layer；
C. spin coating PEDOT:Used as the active layer of sub- battery, anneal afterwards PSS solution 10min under the conditions of 100-150 DEG C；
D. continue the spin coating ZnO film on active layer after annealing, form second electrode decorative layer, then 100-150 DEG C of condition
Lower annealing 10min；
E. concentration is adopted for 1:2-1:4 PDTP-DFBT:The DCB solution of PCBM, subsequently with 1500 revs/min of speed spin coating
On second electrode decorative layer；
F. and then under vacuum continue to be deposited with MoO3/ Al electrodes, and shared connection electrode is utilized it as, on this basis
Continue to prepare OLED；
2. the preparation of OLED components：
Under vacuum and in MoO3On/Al electrode bases, be sequentially prepared electron transfer layer, double emission layers, hole transmission layer,
Hole injection layer and cathode layer, speed control in 0.01-0.15nm/s, THICKNESS CONTROL in 20-150nm, using vacuum thermal evaporation
Technique, under vacuum conditions, adopt co-evaporation method by guest materials in low concentration doping mode in host molecule material, enter
The uniform mixing evaporation of row, so as to prepare the double emission layers of doping, wherein guest materials doping content in host molecule material is
0.1-5%, then prepares under vacuum cathode layer；
3. the assembling of the OLED light source that OPV drives：
Using OPV controllers and memory made by organic material, electrode is left, remaining each part such as OPV and OLED components lead to
Cross the modes such as insertion to be attached thereto and control, the integrated system of tabular is formed by stacking and embedded assembling mode.
10. according to claim 9 OPV drive OLED light source preparation method, it is characterised in that：The step 2. in
It is double when preparing emission layer, atmospheric condition is controlled for nitrogen atmosphere.
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| CN103503564A (en) * | 2011-05-06 | 2014-01-08 | 皇家飞利浦有限公司 | Lighting device and receiver |
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