CN103022366A - Organic electroluminescent device - Google Patents
Organic electroluminescent device Download PDFInfo
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- CN103022366A CN103022366A CN2013100018265A CN201310001826A CN103022366A CN 103022366 A CN103022366 A CN 103022366A CN 2013100018265 A CN2013100018265 A CN 2013100018265A CN 201310001826 A CN201310001826 A CN 201310001826A CN 103022366 A CN103022366 A CN 103022366A
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Abstract
The invention discloses an organic electroluminescent device which comprises electrodes and an organic electroluminescent function layer arranged among the electrodes. The organic electroluminescent function layer comprises at least two luminescent units and an electric charge generating unit arranged among the luminescent units, each luminescent unit comprises a hole transmission layer/matrix and a luminescent layer/electronic transmission layer composed of light emitting dopant according to the direction of outside anode to cathode, the electric charge generating unit comprises an N type doping buffering layer/electric charge generating layer/P type doping buffering layer according to the direction of outside anode to cathode, the electric charge generating layer comprises an electric charge generating assisting layer and a light-absorbing active layer, and overlap between absorption spectrum of the light-absorbing active layer and light emitting spectrum of the light emitting dopant exists. The organic electroluminescent device can effectively utilize optical radiation inside an OLED (organic light emitting diode) to generate electric charge more effectively, and efficient light emitting and slow efficiency reduction are realized.
Description
Technical field
The invention belongs to the organic electroluminescence device technical field, relate to a kind of can be by effectively utilizing the device inside light radiation, increase the device luminous efficiency and improve the organic electroluminescence device structure of luminous efficiency current attenuation.
Background technology
The electricity that the organic electroluminescent technology is based on take organic material as active layer injects luminescence technology, and organic electroluminescence device is also referred to as organic luminescent device (organic light-emitting device, OLED).1987 doctor Deng Qingyun of Kodak (Dr. Chine Wan Tang) successfully utilize the double layer sandwich structure of similar inorganic semiconductor PN heterojunction to prepare first low driving voltage, high efficiency electroluminescent device, Open from This Side the OLED research epoch.Compare present display and lighting technology, OLED has unrivaled comprehensive advantage, and for example real face is luminous, low energy consumption, high efficiency, ultra-thin, ultralight, ultrafast response speed, near 180 ° super large visual angle, widely service condition, good mechanical performance etc.
Through the development in more than 20 years, OLED technology main development went out two large branch---display and lightings.Show the field at OLED, mainly concentrate on the portable type electronic product of all kinds of small-medium sizes at present, adopt OLED display screen such as the intelligent flagship product of each large cell phone manufacturer of the whole world more.The OLED Display Technique of active illuminating will progressively substitute present main flow backlight+the LCD Display Technique.And currently come, can not occur to replace the novel Display Technique of OLED in 30 years from now on.In addition, along with research and development flexible, non-friable, flexible display screen, the application of OLED Display Technique will significantly be expanded.Generally believe that in the industry OLED illumination in 2015 will begin to enter general lighting market, and will become gradually main flow illumination application technology.
Although OLED is progressively industrialization, but still there is very large room for promotion.In the OLED course of work, along with the increase of drive current, luminous efficiency is decay rapidly, and especially in the present extensive high efficiency phosphorescent material devices of using, this decling phase wants serious many for the fluorescent material device of low luminous efficiency.In actual use, the OLED device will inevitably namely be worked under the high electric current at high brightness, and the decay of this luminous efficiency not only causes device power consumption to increase, and excessive electric current can cause significantly shorten the useful life of OLED device.Therefore, the appearance of tandem type OLED can solve above problems in theory in the situation that power consumption does not increase.What it is said that the large-area OLEDs TV of the up-to-date research and development of LG company adopts is exactly this tandem OLED structure.
The principle of cascaded structure OLED device is with two OLED luminescence unit vertical pile together, and the outside is external electrode up and down, and this is identical with conventional device, and middle with a charge generation unit connection that structure is special.In the device course of work, this charge generation unit can produce electronics and the hole of equivalent and be injected into respectively under electric field action in the contiguous luminescence unit, and the xenogenesis electric charge that injects with external electrode meets and is compounded to form exciton.From the device outside, the flow of charge of injection has been utilized twice through two luminescence units.Therefore, luminous quantum efficiency and the current efficiency of series connection device is the twice of same structure single-shot light unit component in theory, and driving voltage also is about twice in theory.Like this, although power consumption does not change, high drive current can well be alleviated to the negative effect that device causes.
As can be seen from the above, in the series connection device, middle charge generation unit is the key factor that determines device performance.In actual conditions, because producing electric charge, the charge generation unit need high electric field auxiliary, and the resistance of itself, also have the absorption luminous to device, the imbalance of positive and negative charge in the luminescence unit recombination region that lowly causes of charge generation efficient particularly, the driving voltage of series connection device will be higher than the twice of single-shot light unit component even more than three times, and quantum efficiency is lower than twice, and finally causes the increase of power consumption.Therefore, the design of middle charge generation unit is conclusive.
Also have in addition a very large problem, increase exactly the coupling delivery efficiency of OLED device inside light radiation.Because the sandwich type structural of organic electroluminescence device and the matching problem of Refractive Index of Material, just only have 20% light radiation to be coupled under the regular situation and output to the device outside, and all the other lose by modes such as surface plasma resonance pattern, waveguide modes up to 80% light radiation, therefore, how to utilize this part light radiation very important to the lifting of OLED performance.For a long time, concentrated on this problem a large amount of research work.Currently used resourcefulness is to start with from the optical design of device outside, for example increases the lenticule group in the ito anode outside that sees through, and adopts substrate of special refractive index etc.; Perhaps regulate and control the position in organic luminescent device recombination luminescence district, realize the maximization of optical coupling output.But these modes are stronger to the selectivity of wavelength, because the OLED emission mostly is wide spectral emissions, not only universality is relatively poor, has also increased cost, has many times also sacrificed in addition other performances of device.
Summary of the invention
The purpose of this invention is to provide a kind of organic electroluminescence device, effectively to utilize the light radiation of OLED inside, more effectively produce electric charge, realize high efficiency luminous and slowly efficient decay.
Organic electroluminescence device of the present invention is by pair of electrodes, and be arranged on that this consists of the organic electroluminescent functional layer between the electrode, described organic electroluminescent functional layer comprises at least two luminescence units, and be arranged on charge generation unit between the luminescence unit, wherein luminescence unit is made of luminescent layer/electron transfer layer that hole transmission layer/matrix and light-emitting dopant consist of to cathode direction according to external anode.The technical characterictic that the present invention is different from prior art is: described charge generation unit is made of the N-type resilient coating/charge generation layer/P type doping resilient coating that mixes to cathode direction according to external anode, and then, charge generation layer wherein is again to be made of the extinction active layer that charge generation auxiliary layer and high exciton form efficient, and the luminescent spectrum of the absorption spectrum of extinction active layer and light-emitting dopant exists overlapping.
Further, organic electroluminescence device of the present invention can also comprise the hole injection layer between anode and luminescence unit, and the electron injecting layer between negative electrode and luminescence unit, with the injection in further raising electronics and hole.
In organic electroluminescence device of the present invention, because the luminescent spectrum of light-emitting dopant and the absorption spectrum of extinction active layer exist overlapping, like this, the extinction active layer in the charge generation layer just can absorb a part of light that the device luminescence unit sends and form exciton.Lower assisting of extra electric field, these excitons dissociate at charge generation auxiliary layer/extinction active layer interface, produce a large amount of electric charges, and are injected into respectively under electric field driven in the luminescence unit of both sides, thereby better realize the charge balance in the luminescence unit of both sides, the performance of boost device.Theoretically, if do not consider the other influences factor, spectrum is overlapping larger, and it is higher that the exciton of extinction active layer forms efficient, and performance of devices is also just better.Usually, the overlapping degree of the emission spectrum of the absorption spectrum of extinction active layer and light-emitting dopant should be not less than 60%.
Although the extinction active layer in the charge generation layer has absorbed a part of photon that luminescence unit sends, but consider absorbance, transmitance and exciton and form efficient, as long as according to different materials, select the extinction active layer thickness of appropriate mix, just can be when guaranteeing charge generation efficient, keep again lower absorbance, its negative effect that causes is dropped to minimum, with the performance maximum efficiency.Generally strengthen the OLED device of processing without overcoupling output, 20% the light radiation of finally only the having an appointment output that can be coupled, remaining about 80% can lose in many ways.Although the light radiation of device inside of the present invention about 75% all can be passed through the extinction active layer, consider the light radiation coupling delivery efficiency of its low absorbance and device 20%, the extinction active layer absorbs the final loss that causes and has been reduced to the approximate level of ignoring.In fact, 80% the interior lights radiation that structure of the present invention has utilized more that should lose, and the lifting of the electric property that brings thus is very obvious, therefore last whole structure is the utilance that has effectively increased the radiation of organic electroluminescence device interior lights, promoted the luminous efficiency of device, and can also reduce the heating of device, significantly delay the current attenuation of device efficiency, and increase the contrast of device.
Usually, the thickness of extinction active layer is adjusted between 15～40nm.
The present invention has enumerated the chemical substance that partly can be used as charge generation layer, for example fullerene (C60) or pentacene (pentacene) can be used as charge generation auxiliary layer material, CuPc (CuPc), pentacene or N, N '-dioctyl-3,4,9,10-imidodicarbonic diamide base pyrene (PTCDI-C8) can be used as the extinction active layer material.But need to prove that the present invention is not limited to this as the material of charge generation elementary layer, as long as can satisfy the chemical substance of charge generation elementary layer requirement, can be as charge generation layer materials'use of the present invention.
The factor that affects the organic electroluminescence device performance is a lot, and wherein the impact of optics and electricity factor is larger.Under the regular situation, about 80% light radiation meeting loses among the OLED, and this is main relevant with the optical property of device.Therefore, as what point out in the background technology, to increase optical coupling output, realizing the maximization of optical coupling output by optical design, is the main flow of present work.In fact, strengthen the coupling delivery efficiency of organic electroluminescence device, can be described as in essence the effective rate of utilization that improves the interior lights radiation.Under the regular situation, absorb the light loss that brings in order to reduce charge generation layer, OLED series connection device can deliberately be avoided the low band gaps material, absorbs main high band gap materials at ultraviolet region and use.The present invention has but jumped out the mentality of designing of present main flow, electric property aspects from device, look for another way and designed a kind of special device architecture, the charge generation unit that is similar to organic photo-detector is inserted between two luminescence units, a part of light and a large amount of electric charge of final generation that it is sent by absorbing the device luminescence unit, thereby better realize charge balance in the luminescence unit of both sides, with the performance of boost device.
Although the extinction active layer has absorbed a part of photon that luminescence unit sends among the present invention, but consider light radiation coupling delivery efficiency and the low absorbance of extinction active layer of OLED device about 20%, absorb the final loss that causes by the charge generation unit and be reduced to the approximate level of ignoring.And because 80% the interior lights radiation that the present invention has utilized effectively that should lose, in fact not only device is not caused negative effect, on the contrary owing to produce more electric charge, optimized the charge balance in the luminous zone, the lifting of many performances of bringing comprises the luminous efficiency that increases device, significantly delays the current attenuation of device efficiency, reduce the heating of device, can also increase in addition the contrast of device.
Specifically, the current efficiency of organic electroluminescence device of the present invention is compared isostructure single-shot light unit component and is brought up to more than the twice, and the increase of the multiplying power under the high electric current, is up to 2.4 times.100mA/cm for example
2During current drives, single-shot light unit component luminous efficiency is 5.2cd/A, and its high-luminous-efficiency has descended about 47% relatively, and series connection device luminous efficiency is 12.8cd/A, relatively its high-luminous-efficiency has only descended approximately 25%, and this that is to say that current attenuation has obtained well delaying.In addition, because luminous efficiency improves and drive current reduces, the also corresponding minimizing of Joule heat that the heating that the radiation of device inside loss causes and high electric current cause.At last, because the low luminous efficiency under the current density and extinction active layer absorb extraneous visible light and cause the color of device itself darker, the connect contrast of device of the present invention also will increase than conventional device, and this is helpful to Display Technique.
Description of drawings
Fig. 1 is the device architecture schematic diagram of the embodiment of the invention 1 organic electroluminescence device A1.
Fig. 2 is the structural representation of luminescence unit among Fig. 1.
Fig. 3 is the structural representation of charge generation unit among Fig. 1.
Fig. 4 is absorption spectrum and the Ir (piq) of the CuPc film that adopts among the OLED device A1 that provides of embodiment 1
2The photoluminescence spectra of acac film.
Fig. 5 is the current density-change in voltage curve of the OLED device A1 that provides of embodiment 1 and A2, and wherein the curve of device A1 is the result under the lower and driven (unglazed photograph) of 650nm LED irradiation.
Fig. 6 is the current efficiency-current density change curve of the OLED device A1 that provides of embodiment 1 and A2.
Fig. 7 is the current efficiency ratio-current density change curve of the OLED device A1 that provides of embodiment 1 and A2.
Fig. 8 is the charge generation process schematic diagram of the OLED device A1 charge generation layer that provides of embodiment 1; A) being the situation under the illumination in the course of work among the figure, b) is initial situation when unglazed.
Fig. 9 is absorption spectrum and the Ir (mdq) of pentacene film among the OLED device B1 that provides of embodiment 2
2The photoluminescence spectra of acac film.
Figure 10 is the current density-change in voltage curve of the OLED device B1 that provides of embodiment 2 and B2.
Figure 11 is the current efficiency-current density change curve of the OLED device B1 that provides of embodiment 2 and B2.
Figure 12 is PTCDI-C among the OLED device C1 that provides of embodiment 3
8The photoluminescence spectra of the absorption spectrum of film and FIrpic film.
Figure 13 is the current density-change in voltage curve of the OLED device C1 that provides of embodiment 3 and C2.
Figure 14 is the current efficiency-current density change curve of the OLED device C1 that provides of embodiment 3 and C2.
Embodiment
The structure of present embodiment organic electroluminescence device A1 is:
A1：ITO / m-MTDATA (20nm) / NPB (50nm) / TCTA (10nm) / TCTA: TPBi: Ir(piq)
2acac (7wt%, 20nm) / TPBi (20nm) / TPBi: Cs
2CO
3 (10wt%, 10nm) / C60 (20nm) / CuPc (20nm) / m-MTDATA: F4-TCNQ (20wt%, 10nm) / NPB (40nm) / TCTA (10nm) / TCTA: TPBi: Ir(piq)
2acac (7wt%, 20nm) / TPBi (30nm) / TPBi: Cs
2CO
3 (10wt%, 20nm) / Al (100nm)。
The structure of this organic electroluminescence device as shown in Figure 1, the whole cascaded structure that adopts, formed by two luminescence units 40 and a charge generation unit 50, to be deposited on transparent conductive film ITO on the glass substrate 10 as the anode 20 of device, Al is as the negative electrode 70 of device, simultaneously ITO after and before the Al electrode also respectively evaporation one deck hole injection layer 30 and electron injecting layer 60, with the injection in raising electronics and hole.The structure of luminescence unit 40 such as Fig. 2, (matrix: light-emitting dopant) 402/electron transfer layer 403 for hole transmission layer 401/luminescent layer.The structure of charge generation unit 50 such as Fig. 3 are N-type doping resilient coating 501/charge generation layer (502/503)/P type doping resilient coating 504, and wherein charge generation layer consists of by charge generation auxiliary layer 502 and extinction active layer 503 are two-layer.
Particularly, wherein the material of each functional layer employing is: in the luminescence unit 40, hole transmission layer 401 materials are NPB and TCTA; In the luminescent layer 402, take TCTA:TPBi as matrix, Ir (piq)
2Acac is light-emitting dopant; Electron transfer layer 403 materials are TPBi.In the charge generation unit 50, N-type doping resilient coating 501 is TPBi:Cs
2CO
3, P type doping resilient coating 504 is m-MTDATA:F4-TCNQ; In the charge generation layer, as charge generation auxiliary layer 502, CuPc is as extinction active layer 503 with C60.Hole injection layer 30 is m-MTDATA, and electron injecting layer 60 is TPBi:Cs
2CO
3
Fig. 4 is absorption spectrum and the Ir (piq) of 20nm CuPc film
2The emission spectrum of acac film, as can be seen from the figure the peak value of CuPc absorption spectrum is just corresponding to Ir (piq)
2Near the acac 620nm emission peak, spectrum is fully overlapping, therefore, Ir (piq)
2The light that acac sends during by the CuPc film part can be absorbed.And then the charge generation auxiliary layer in the charge generation layer/extinction active layer adopts C60/CuPc heterojunction, and adopts respectively TPBi:Cs
2CO
3With N-type and the P type doping resilient coating of m-MTDATA:F4-TCNQ as both sides, the charge generation unit of above-mentioned special construction can produce more electric charge, and be beneficial to the coupling of energy level and the injection of electric charge, thus optimize the charge balance in the luminescence unit of both sides, cause the remarkable lifting of device performance.
In order to prove that further above-mentioned device architecture can promote the OLED performance of devices, it only is single-shot light unit that present embodiment has prepared with device A1 difference simultaneously, the reference device A2 that other structures are identical.
A2：ITO / m-MTDATA (20nm) / NPB (50nm) / TCTA (10nm) / TCTA: TPBi: Ir(piq)
2acac (7wt%, 20nm) / TPBi (30nm) / TPBi: Cs
2CO
3 (10wt%, 20nm) / Al (100nm)。
Fig. 5 is the current density-change in voltage curve of device A1 and A2, as we can see from the figure, the operating voltage of device A1 is apparently higher than the twice of device A2 when initial, and still along with the increase of electric current, the driving voltage of device A1 drops to about the twice of device A2 gradually.From Fig. 6 and Fig. 7, can see simultaneously, the current efficiency of device A1 from incipient a little more than device A2, along with the increase of electric current rapidly increases to 2.4 times, and current density value corresponding to device A1 current efficiency maximum is apparently higher than device A2, along with current density increases, the decay of current efficiency is also obviously slower.
Because the existence of CuPc and fullerene C60 film among the device A1, device is under off position, can absorb the extraneous visible light of coming in from the transmission of transparency electrode ITO side, therefore the color of whole device under off position is obviously dark than device A2, in addition, device A1 has low luminous efficiency under low current density.The two is helpful for the contrast that increases the OLED display screen.
And then, led light source with peak wavelength 650nm shines device A1 from ITO electrode one side, measure its current density-change in voltage curve, as shown in Figure 5, under the LED red light irradiation, comparing does not have the driven of illumination situation, under the same current density device A1 driving voltage obviously lower, be the twice of device A2 just.Along with the increase of current density, two curves are more and more approaching, and namely the voltage under the same current density is more and more approaching.
The analysis of causes that produces above phenomenon is as follows: when device A1 driven, from ito anode and Al negative electrode respectively to two luminescence unit injected holes and electronics, and charge generation auxiliary layer/extinction active layer (C60/CuPc) interface also can produce positive and negative charge under the effect of electric field, wherein the hole is injected into the luminescence unit of Al electrode one side via CuPc, electronic injection is to the luminescence unit of ito anode one side, and is compounded to form Ir (piq) in recombination region separately with electric charge from electrode injection
2Acac exciton radioluminescence.But because when initial, the electric charge of CuPc/C60 generation of interfaces must be finished to the upper electronics transfer of C60 LUMO by the electronics on the CuPc HOMO, shown in Fig. 6 (b).This process need overcomes one up to the potential barrier of 0.7ev, increase the auxiliary of electric field outside therefore needing and just can finish, and according to quantum mechanics as can be known, the efficient of this tunnelling process is lower.Therefore, the voltage when device A1 is initial is higher than the twice of device A2, and the imbalance of positive and negative charge also causes the not enough twice of device current efficient in the recombination region of two luminescence units.
Along with the increase of current density, the namely increase of device brightness (both are substantially linear), the CuPc molecule in the charge generation layer begins to absorb a part by Ir (piq)
2The light that acac sends, and form exciton.Shown in Fig. 6 (a), the CuPc molecule that is excited, its electron distributions is on LUMO, and spontaneous formation electric charge shifts on the interface, and electronics is transferred to the process of closing on the C60 LUMO and is not had stopping of energy barrier.In addition, under the effect of extra electric field, the exciton fission efficient at this interface namely charge generation efficient can increase considerably, consequent amount of charge increases considerably than initial time, therefore the driving voltage of device A1 can move closer in the twice of device A2, and current efficiency increases gradually.Because the charge generation efficient of this charge generation unit is higher than conventional charge generation unit, therefore during high current density, it is better that positive and negative charge balance in two luminescence units is wanted, and causes at last current efficiency to be higher than the twice of device A2, and with the increase slow-decay of current density.
Embodiment 2
Simultaneously preparation comprises the organic electroluminescence device B1 of dual light unit and the parametric device B2 of single-shot light unit, and its concrete structure is as follows:
B1：ITO / m-MTDATA (20nm) / NPB (50nm) / TCTA (10nm) / TCTA: TPBi: Ir(mdq)
2acac (7wt%, 20nm) / TPBi (20nm) / TPBi: Cs
2CO
3 (10wt%, 10nm) / C60 (20nm) / pentacene (20nm) / m-MTDATA: F4-TCNQ (20wt%, 10nm) / NPB (40nm) / TCTA (10nm) / TCTA: TPBi: Ir(mdq)
2acac (7wt%, 20nm) / TPBi (30nm) / TPBi: Cs
2CO
3 (10wt%, 20nm) / Al (100nm)；
B2：ITO / m-MTDATA (20nm) / NPB (50nm) / TCTA (10nm) / TCTA: TPBi: Ir(mdq)
2acac (7wt%, 20nm) / TPBi (30nm) / TPBi: Cs
2CO
3 (10wt%, 20nm) / Al (100nm)。
The present embodiment charge generation layer adopts C60/pentacence, and take C60 as the charge generation auxiliary layer, pentacene is the extinction active layer.The device light-emitting dopant is Ir (mdq)
2Acac.As shown in Figure 9, the absorption bands of pentacence has almost completely covered Ir (mdq) between 500～700nm
2The luminescent spectrum of acac is so pentacence can absorb Ir (mdq) well
2The photon of acac radiation.
Figure 10 and Figure 11 are respectively the current density of device B1 and B2-change in voltage curve and current efficiency-current density change curve.Similar to embodiment 1, the operating voltage of device B1 is apparently higher than the twice of device B2 when initial, and along with the increase of electric current, the driving voltage of device B1 drops to about the twice of device B2.Along with the increase of current density, the current efficiency of device B1 approaches and surpasses the twice of B2 gradually, and downward trend is slow.Can infer that thus the charge generation unit of present embodiment is by pentacene absorption portion Ir (mdq)
2The radiation photon of acac has reached the purpose of utilizing internal radiation to increase device efficiency.
Embodiment 3
Simultaneously preparation comprises the organic electroluminescence device C1 of dual light unit and the parametric device C2 of single-shot light unit, and its concrete structure is as follows:
C1：ITO / m-MTDATA (20nm) / NPB (50nm) / TCTA (10nm) / TCTA: TPBi: FIrpic (7wt%, 20nm) / TPBi (20nm) / TPBi: Cs
2CO
3 (10wt%, 10nm) / PTCDI-C8 (20nm) / Pentacene (20nm) / m-MTDATA: F4-TCNQ (20wt%, 10nm) / NPB (40nm) / TCTA (10nm) / TCTA: TPBi: FIrpic (7wt%, 20nm) / TPBi (30nm) / TPBi: Cs
2CO
3 (10wt%, 20nm) / Al (100nm)；
C2：ITO / m-MTDATA (20nm) / NPB (50nm) / TCTA (10nm) / TCTA: TPBi: FIrpic (7wt%, 20nm) / TPBi (30nm) / TPBi: Cs
2CO
3 (10wt%, 20nm) / Al (100nm)。
The charge generation unit of present embodiment adopts PTCDI-C
8/ Pentacene heterojunction is take pentacene as charge generation auxiliary layer, PTCDI-C
8Be the extinction active layer.The device light-emitting dopant is blue phosphorescent material FIrpic.As shown in figure 12, the absorption spectrum of PTCDI-C8 and the photoluminescence spectra of FIrpic are fully overlapping, and PTCDI-C8 can absorb the photon of FIrpic radiation well.
Figure 13 and Figure 14 are respectively the current density of device C1 and C2-change in voltage curve and current efficiency-current density change curve, and as can be seen from the figure the phenomenon similar to the first two embodiment illustrates that same effect has also been played in the design of present embodiment.
The formal chemical name of related abbreviation title is as follows in the embodiment of the invention.
ITO: tin indium oxide.
M-MTDATA:4,4', 4''-three (N-3-aminomethyl phenyl-N-phenyl amino) triphenylamine.
NPB:N, N '-two (1-naphthyl)-N, N ,-diphenyl-1,1 '-biphenyl-4,4 '-diamines.
TCTA:4,4', 4''-three (carbazole-9-yl) triphenylamine.
TPBi:1,3, the 5-three (benzene of 1-phenyl-1H-benzimidazolyl-2 radicals-yl).
Ir (piq)
2Acac: two (1-phenyl isoquinolin quinoline) (acetylacetone,2,4-pentanediones) close iridium (III).
F4-TCNQ:2,3,5,6-tetrafluoro-7,7', 8,8'-, four cyanogen dimethyl 1,4-benzoquinone.
C60: fullerene.
CuPc: CuPc.
Pentacene: pentacene.
Ir (mdq)
2The acac:(acetylacetone,2,4-pentanedione) two (the 2-methyldiphenyl is [F, H] quinoxalines also) close iridium.
FIrpic: two (4,6-difluorophenyl pyridine-N, C2) pyridine formyl closes iridium.
PTCDI-C8:N, N '-dioctyl-3,4,9,10-imidodicarbonic diamide base pyrene.
Cs
2CO
3: cesium carbonate.
Al: aluminium.
Claims (6)
1. organic electroluminescence device, by pair of electrodes, and be arranged on this organic electroluminescent functional layer between electrode is consisted of, described organic electroluminescent functional layer comprises at least two luminescence units, and be arranged on charge generation unit between the luminescence unit, wherein luminescence unit is made of luminescent layer/electron transfer layer that hole transmission layer/matrix and light-emitting dopant consist of to cathode direction according to external anode, it is characterized in that: described charge generation unit is made of mix resilient coating/charge generation layer/P type doping resilient coating of N-type to cathode direction according to external anode, wherein charge generation layer is made of charge generation auxiliary layer and active layer, and the luminescent spectrum of the absorption spectrum of extinction active layer and light-emitting dopant exists overlapping.
2. organic electroluminescence device according to claim 1 is characterized in that also comprising the hole injection layer between anode and luminescence unit, and the electron injecting layer between negative electrode and luminescence unit.
3. organic electroluminescence device according to claim 1 and 2 is characterized in that the absorption spectrum of described extinction active layer and the overlapping degree of emission spectrum of light-emitting dopant are not less than 60%.
4. organic electroluminescence device according to claim 1 and 2, the thickness that it is characterized in that described extinction active layer is 15～40nm.
5. organic electroluminescence device according to claim 1 and 2 is characterized in that described charge generation auxiliary layer material is fullerene or pentacene.
6. organic electroluminescence device according to claim 1 and 2 is characterized in that described extinction active layer material is CuPc, pentacene or N, N '-dioctyl-3,4,9,10-imidodicarbonic diamide base pyrene.
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| CN104183731A (en) * | 2013-05-24 | 2014-12-03 | 海洋王照明科技股份有限公司 | Organic light emitting device and manufacturing method thereof |
| CN104868055A (en) * | 2015-04-09 | 2015-08-26 | 中国科学院化学研究所 | Organic hetero-junction thin film photoresistor and photosensitive voltage divider based on organic conjugated molecules |
| WO2017000635A1 (en) * | 2015-06-29 | 2017-01-05 | 京东方科技集团股份有限公司 | Series-type organic light-emitting diode, array substrate, and display apparatus |
| WO2017201776A1 (en) * | 2016-05-24 | 2017-11-30 | 深圳市华星光电技术有限公司 | Three-primary-color white oled device structure, and electroluminescent device and display device thereof |
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| CN104868055B (en) * | 2015-04-09 | 2017-07-14 | 中国科学院化学研究所 | Organic heterojunction thin film photoresistor and the photosensitive divider based on organic conjugated molecule |
| CN104868055A (en) * | 2015-04-09 | 2015-08-26 | 中国科学院化学研究所 | Organic hetero-junction thin film photoresistor and photosensitive voltage divider based on organic conjugated molecules |
| US10263044B2 (en) | 2015-06-29 | 2019-04-16 | Boe Technology Group Co., Ltd. | Tandem organic light-emitting diode, array substrate and display device |
| WO2017000635A1 (en) * | 2015-06-29 | 2017-01-05 | 京东方科技集团股份有限公司 | Series-type organic light-emitting diode, array substrate, and display apparatus |
| US10283569B2 (en) * | 2015-06-29 | 2019-05-07 | Boe Technology Group Co., Ltd. | Tandem organic light-emitting diode, array substrate and display device |
| WO2017201776A1 (en) * | 2016-05-24 | 2017-11-30 | 深圳市华星光电技术有限公司 | Three-primary-color white oled device structure, and electroluminescent device and display device thereof |
| CN108807702A (en) * | 2017-05-04 | 2018-11-13 | Tcl集团股份有限公司 | Parallel multi-layer QLED devices and preparation method thereof |
| CN108807702B (en) * | 2017-05-04 | 2020-12-11 | Tcl科技集团股份有限公司 | Serial multilayer QLED device and preparation method thereof |
| CN110391343A (en) * | 2018-04-19 | 2019-10-29 | 乐金显示有限公司 | El display device and its manufacturing method |
| US11205685B2 (en) | 2018-04-19 | 2021-12-21 | Lg Display Co., Ltd. | Electro-luminescent display device and method of fabricating the same |
| WO2021017613A1 (en) * | 2019-07-29 | 2021-02-04 | 云谷（固安）科技有限公司 | Test device and test method therefor |
| US11953537B2 (en) | 2019-07-29 | 2024-04-09 | Yungu (Gu'an) Technology Co., Ltd. | Test device and test method thereof |
| CN115548237A (en) * | 2022-10-17 | 2022-12-30 | 京东方科技集团股份有限公司 | Light emitting device, display substrate and display apparatus |
| WO2024082939A1 (en) * | 2022-10-17 | 2024-04-25 | 京东方科技集团股份有限公司 | Light-emitting device, display substrate and display apparatus |
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