CN105306040A - Coupled structure for inductor component - Google Patents
Coupled structure for inductor component Download PDFInfo
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- CN105306040A CN105306040A CN201510373539.6A CN201510373539A CN105306040A CN 105306040 A CN105306040 A CN 105306040A CN 201510373539 A CN201510373539 A CN 201510373539A CN 105306040 A CN105306040 A CN 105306040A
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Abstract
The present invention provides a circuit, comprising a coupled structure and a first inductor component. The couple structure comprises two or more than two conducting loops or a set of conducting paths electrically connected with the two or more than two conducting loops. The first inductor component is coupled with a first conducting loop of the two or more than two conducting loops. The present invention further provides a method for forming the circuit.
Description
The cross reference of related application
The application is the submit on October 8th, 2013 the 14/075th, and the part continuation application of No. 021 U.S. Provisional Patent Application, its full content is hereby expressly incorporated by reference.
Technical field
The present invention relates in general to integrated circuit, more specifically, relates to clock circuit.
Background technology
In integrated circuits, Clock Tree is generally used for as multiple assembly distributes common clock signal to make the operation of multiple assembly synchronous.The difference of the time of advent of the clock signal of two or more clocks (clocked) assembly of integrated circuit can cause the error in the operation of integrated circuit.In some applications, the Clock Tree for distributing common clock signal comprises the structure that such as H sets net (H-treemeshes) or equalizing and buffering tree.In many cases, to distribute unmatched the minimizing of the time of advent of clock signal be realized by enough large drive current, this drive current is used for distributing common clock signal along Clock Tree.Along with the increase of the frequency of clock signal, also increase for driving the power consumption of Clock Tree.And the clock buffers at different levels of Clock Tree extract big current from power generating facilities and power grids usually, thus cause the voltage drop of supply voltage and affect the performance of neighbouring assembly.In some applications, Clock Tree consumes 20% to 40% of integrated circuit total power consumption.
Summary of the invention
According to an aspect of the present invention, provide a kind of circuit, comprising: coupled structure, comprise two or more galvanic circle and one group of conductive path, two or more galvanic circle is electrically connected; And first inductance component, with the first galvanic circle magnetic coupling of two or more galvanic circle.
Preferably, top-down observation, the first galvanic circle is around the first inductance component.
Preferably, top-down observation, the first inductance component is around the first galvanic circle.
Preferably, the first galvanic circle of two or more galvanic circle comprises first end and the second end; Second galvanic circle of two or more galvanic circle comprises first end and the second end; And one group of conductive path comprises: the first conductive path, the first end of the first end of the first galvanic circle with the second galvanic circle is electrically connected; With the second conductive path, the second end of the first galvanic circle is electrically connected with the second end of the second galvanic circle.
Preferably, connect up to the first conductive path and the second conductive path, make top-down observation, the first conductive path intersects with the second conductive path.
Preferably, the first conductive path and the second conductive path are connected up, makes top-down observation, in the first conductive path and the second conductive path, all there is angled turning.
Preferably, this circuit also comprises: the first shielding construction; And secondary shielding structure, top-down observation, in one group of conductive path at least partially between the first shielding construction and secondary shielding structure.
Preferably, this circuit also comprises: the second inductance component, with the second galvanic circle magnetic coupling of two or more galvanic circle.
Preferably, between the first galvanic circle of two or more galvanic circle and the second galvanic circle, the length at interval is equal to or greater than 100 μm.
Preferably, coupled structure also comprises: two other or multiple galvanic circle; With other one group of conductive path, by two other or the electrical connection of multiple galvanic circle; First galvanic circle of two other or multiple galvanic circle and the second inductance component magnetic coupling; And the second galvanic circle magnetic coupling of the second galvanic circle of two or more galvanic circle and two other or multiple galvanic circle.
Preferably, this circuit also comprises: the 3rd inductance component, with the second galvanic circle magnetic coupling of the second galvanic circle of two or more galvanic circle and two other or multiple galvanic circle.
According to a further aspect in the invention, provide a kind of circuit, comprising: the first oscillator, comprises inductance component; Second oscillator, comprises inductance component; And coupled structure, comprising: the first galvanic circle, with the inductance component magnetic coupling of the first oscillator; Second galvanic circle, with the inductance component magnetic coupling of the second oscillator; With one group of conductive path, the first galvanic circle is electrically connected with the second galvanic circle.
Preferably, top-down observation, the first galvanic circle is around the inductance component of the first oscillator; And
Top-down observation, the second galvanic circle is around the inductance component of the second oscillator.
Preferably, top-down observation, the inductance component of the first oscillator is around the first galvanic circle; And top-down observation, the inductance component of the second oscillator is around the second galvanic circle.
Preferably, the first galvanic circle comprises first end and the second end; Second galvanic circle comprises first end and the second end; And one group of conductive path comprises: the first conductive path, the first end of the first end of the first galvanic circle with the second galvanic circle is electrically connected; With the second conductive path, the second end of the first galvanic circle is electrically connected with the second end of the second galvanic circle.
Preferably, connect up to the first conductive path and the second conductive path, make top-down observation, the first conductive path intersects with the second conductive path.
Preferably, connect up, make top-down observation to the first conductive path and the second conductive path, the first conductive path and the second conductive path all have angled turning.
Preferably, this circuit also comprises: the first shielding construction; And secondary shielding structure, top-down observation, in one group of conductive path at least partially between the first shielding construction and secondary shielding structure.
According to another aspect of the invention, provide a kind of method, comprising: the first magnetic field generated in response to the first inductance component by the first oscillator, generate induced current at the first galvanic circle place of coupled structure; And by one group of conductive path of coupled structure, induced current is transferred to the second galvanic circle of coupled structure, wherein, first galvanic circle is electrically connected with the second galvanic circle by one group of conductive path, and the second inductance component of the second oscillator is by the first inductance component magnetic coupling of coupled structure and the first oscillator.
Preferably, the method also comprises: in response to the induced current of the second galvanic circle by coupled structure, generate the second magnetic field; In response to the second magnetic field, generate another induced current at the 3rd galvanic circle place; And by another group conductive path of coupled structure another induced current transferred to the 4th galvanic circle of coupled structure, wherein, the 3rd galvanic circle is electrically connected with the 4th galvanic circle by another group conductive path.
Accompanying drawing explanation
With example but unrestriced form illustrates one or more embodiment, in the accompanying drawings, the element with same reference numerals represents similar element.
Fig. 1 is the schematic diagram of two oscillators according to one or more embodiment.
Fig. 2 A is the schematic diagram that can be used for the array of capacitors of one or two oscillator in Fig. 1 according to one or more embodiment.
Fig. 2 B is the schematic diagram that can be used for the variable capacitance diode of one or two oscillator in Fig. 1 according to one or more embodiment.
Fig. 3 is the schematic diagram of six oscillators according to one or more embodiment.
Fig. 4 is the functional block diagram of a set of principal and subordinate's fine-adjusting unit according to one or more embodiment.
Fig. 5 is the schematic diagram of the pulse distribution network according to one or more embodiment.
Fig. 6 is the flow chart making the method for oscillator synchronization according to one or more embodiment.
Fig. 7 is the schematic diagram of the ring oscillator according to one or more embodiment.
Fig. 8 is the schematic diagram of another ring oscillator according to one or more embodiment.
Fig. 9 is the top view according to the coupled structure of one or more embodiment and the inductance component of correspondence.
Figure 10 be according to two inductance components or do not have with coupled structure of one or more embodiment between coupling coefficient with the diagram of frequency change.
Figure 11 A to Figure 11 C is the top view according to the coupled structure of one or more embodiment and the inductance component of correspondence.
Figure 12 A to Figure 12 E is the top view according to the coupled structure of one or more embodiment and the inductance component of correspondence.
Figure 13 A to Figure 13 B is the top view according to the coupled structure of one or more embodiment and the inductance component of correspondence.
Figure 14 is the top view according to the coupled structure of one or more embodiment and the inductance component of correspondence.
Figure 15 is the top view according to the coupled structure with shielding construction of one or more embodiment and the inductance component of correspondence.
Figure 16 is the flow chart making the magnetic-coupled method of inductance component according to one or more embodiment.
Embodiment
Following content provides one or more different embodiment or example, to realize different characteristic of the present invention.The particular instance of assembly and layout will be described to simplify the present invention below.Certainly, these are only example but are not intended to limit the present invention.According to the standard practices in industry, the various parts in accompanying drawing be not drawn to scale and only for illustration of object.
In certain embodiments, not use Clock Tree but use the two or more oscillators being configured to generate the outputting oscillation signal with preset frequency clock signal to be dispensed to multiple clock assemblies in integrated circuit.And, implement one or more synchronization mechanisms to minimize difference on the frequency in the oscillator signal that generated by two or more oscillator or phase difference.In certain embodiments, one or more synchronization mechanisms described comprise magnetic coupling, principal and subordinate's fine setting and impulses injection.
Fig. 1 is the schematic diagram of two oscillator 100A and 100B according to one or more embodiment.In certain embodiments, oscillator 100A and 100B is configured to generate the oscillator signal with preset frequency.In certain embodiments, the frequency carrying out the oscillator signal of self-oscillator 100A and 100B is similar to identical, but not exclusively equals preset frequency.And in certain embodiments, the phase place carrying out the oscillator signal of self-oscillator 100A and 100B is not exclusively synchronous.In certain embodiments, the difference on the frequency between making oscillator 100A and 100B reach to be synchronously to instigate from the oscillator signal of oscillator 100A and 100B and phase difference minimize.Although composition graphs 1 illustrate only two oscillator 100A and 100B, illustrated synchronization mechanism can be applicable to the oscillator of two or more similar configuration in same integrated circuit.
Oscillator 100A comprises inductance component 110A, capacitor element 120A, active feedback device 130A, switching device 140A, output node 152A and complementary output node 154A.Inductance component 110A, capacitor element 120A, active feedback device 130A and switching device 140A are coupling between output node 152A and complementary output node 154A.
Active feedback device 130A comprises two N-type transistor 132A and 134A.The source terminal of transistor 132A with 134A is all connected with ground connection reference node 162A.The drain electrode end of transistor 132A is connected with the gate terminal of node 152A and transistor 134A, and the drain electrode end of transistor 134A is connected with the gate terminal of node 154A and transistor 132A.Active feedback device 130A is configured at node 152A place's output first outputting oscillation signal and at node 154A place's output first complementary output oscillator signal.First outputting oscillation signal and the first complementary output oscillator signal have the preset frequency determined according to the electrical characteristic of inductance component 110A and the electrical characteristic of capacitor element 120A.In certain embodiments, if the inductance of inductance component 110A is L
tOTAL, and the electric capacity of capacitor element 120A is C
tOTAL, determine predetermined frequency F according to following equation
oSC(unit: Hz):
In some applications, have and be also called as " LC resonant oscillator " with the oscillator of oscillator 100A similar structures.In certain embodiments, transistor 132A and 134A is P-type crystal pipe.In certain embodiments, the active feedback device of other types also can be used as active feedback device 130A.
Inductance component 110A comprises the inductor 112A and inductor 114A that combine and be formed as conductive coil.Inductor 112A is connected between node 152A and power source reference node 164A, and inductor 114A is connected between node 154A and power source reference node 164A.
Capacitor element 120A comprises coarse adjustment capacitor 122A and trimmer capacitor 124A.In certain embodiments, the electric capacity of coarse adjustment capacitor 122A is set according to the set of number signal from bus 126A.In certain embodiments, replace coarse adjustment capacitor 122A by one group of hard-wired capacitor, therefore the electric capacity of coarse adjustment capacitor 122A is fixing, and omits bus 126A.In certain embodiments, the electric capacity of trimmer capacitor 124A is set according to the analog signal from path 128A.In certain embodiments, by controlling the resonance frequency of the adjustable oscillator 100A of coarse adjustment capacitor 122A or trimmer capacitor 124A.
Switching device 140A is configured to when switching device 140A conducting, is corresponding predetermined voltage level by the signal sets at node 152A and 154A place.Such as, when switching device 140A conducting, node 152A and 154A is electrically connected.In this case, transistor 132A and 134A and inductor 112A and 114A is used as voltage driver, and is the voltage level can determined according to the impedance of transistor 132A, 134A and inductor 112A and 114A by the signal sets at node 152A and 154A place.In certain embodiments, when switching device 140A conducting, the voltage level of the signal at node 152A and 154A place is approximately set as the median of power source reference node 164A and ground connection reference node 162A.
Control switch device 140A is carried out by the signal on the 170A of path.In certain embodiments, the control signal on the 170A of path is for impelling the oscillator signal at node 152A and 154A place to intersect the pulse signal of (crossingover).Therefore, in the present invention, switching device 140A is also called as reset device or impulses injection device.In certain embodiments, switching device 140A is transistor.In certain embodiments, switching device 140A is P-type crystal pipe, N-type transistor or transmission gate.Omit switching device 140A in certain embodiments.
Oscillator 100B comprises inductance component 110B, capacitor element 120B, active feedback device 130B, switching device 140B, output node 152B and complementary output node 154B.Oscillator 100B has substantially identical configuration with oscillator 100A.The component class of oscillator 100B is similar to the assembly of oscillator 100A, and has similar reference number (except the suffix of correspondence is changed to " B " by " A ").The characteristic of oscillator 100B and function are similar to characteristic and the function of above-mentioned oscillator 100A substantially, therefore no longer repeat the detailed description to oscillator 100B.
In certain embodiments, on oscillator 100A and oscillator 100B is positioned on same substrate, is positioned in same package substrate various substrates, on the various substrates that is positioned at substrate stack or be positioned on the various substrates of die-stack part.In certain embodiments, utilize power distributing network, make power source reference node 164A with 164B have substantially identical mains voltage level, and make ground connection reference node 162A with 162B have substantially identical ground connection reference voltage level.In certain embodiments, the digital signal on bus 126A and 126B has identical logical value.
In certain embodiments, by providing the signal on path 170A and path 170B based on the signal distribution network of shared signal.In certain embodiments, the signal on path 170A and path 170B is synchronizing signal.In certain embodiments, the signal on path 170A and path 170B is pulse signal.In certain embodiments, the preset frequency of the outputting oscillation signal of oscillator 100A and 100B is the integral multiple of the signal frequency on path 170A and path 170B.
And, the inductance component 110A of oscillator 100A and the inductance component 110B magnetic coupling (as shown in dotted arrow 180) of oscillator 100B.Magnetic coupling between inductance component 110A and inductance component 110B refers to, the operation of the flux effects inductance component 110B generated by operating induction device 110A, vice versa.In certain embodiments, on the various substrates be similar to the position set by oscillator 100A and 100B, inductance component 110A and inductance component 110B is positioned on same substrate, being positioned in same package substrate, on the various substrates that is positioned at substrate stack or be positioned on the various substrates of die-stack part.Inductance component 110A and inductance component 110B is configured to the out-phase component in the oscillator signal at the node 152A place of attenuated oscillation device 100A and the node 152B place of oscillator 100B, and strengthens the in-phase component in the oscillator signal at the node 152A place of oscillator 100A and the node 152B place of oscillator 100B.As a result, after startup oscillator 100A and oscillator 100B, the outputting oscillation signal at node 152A and 152B place finally stabilizes to in-phase oscillator signal.In other words, inductance component 110A and inductance component 110B is configured to make the oscillator signal of oscillator 100A and oscillator 100B generation synchronous.
In certain embodiments, be enough to make mutual inductance within predetermined a period of time, make oscillator 100A and oscillator 100B reach synchronous, the distance of the inductance component 110A of oscillator 100A and the inductance component 110B of oscillator 100B is equal to or less than preset distance.In certain embodiments, predetermined distance is the half of the electromagnetic wavelength of the preset frequency with oscillator signal.In certain embodiments, the preset frequency of outputting oscillation signal is in the scope of 100MHz to 20GHz.
Fig. 2 A is the schematic diagram that can be used as the array of capacitors 200 of coarse adjustment capacitor 122A or coarse adjustment capacitor 122B according to one or more embodiment.Array of capacitors 200 comprises first node 202, Section Point 204, a K transistor 212-1 to a 212-K and 2K capacitor 222-1 to 222-K and 224-1 to 224-K, and wherein K is positive integer.First node 202 and Section Point 204 can be used for being connected with corresponding node 152A or node 154A, or connect with corresponding node 152B or node 154B.Capacitor 222-1 to 222-K is connected to first node 202, capacitor 224-1 to 224-K is connected to Section Point 204, and transistor 212-1 to 212-K is connected between the corresponding couple capacitors that is made up of with 224-1 to 224-K capacitor 222-1 to 222-K.Transistor 212-1 to 212-K is used as switch and is controlled the control of signal B [0], B [1] to B [K-1].
In certain embodiments, transistor 212-1 to 212-K is P-type crystal pipe or N-type transistor.In certain embodiments, transistor 212-1 to 212-K is replaced by the switch of transmission gate or other types.In certain embodiments, capacitor 222-1 to 222-K and 224-1 to 224-K is MOM capacitor or MIM capacitor.
In certain embodiments, the total capacitance of each paths (comprising in transistor 212-1 to 212-K, capacitor corresponding in capacitor corresponding in capacitor 222-1 to 222-K one and capacitor 224-1 to 224-K one) has identical value.In these cases, unitary coded format (unarycodingformat) is adopted to encode to control signal B [0:K-1].In certain embodiments, the total capacitance of each paths of above restriction is equivalent to one of following multiple of predetermined cell capacitance value: 2
0doubly, 2
1doubly ..., 2
k-1doubly.In these optional situations, binary coding form is adopted to encode to control signal B [0:K-1].
Fig. 2 B is the schematic diagram that can be used as the variable capacitance diode 250 of trimmer capacitor 124A in Fig. 1 or trimmer capacitor 124B according to one or more embodiment.Variable capacitance diode 250 comprises first node 252, Section Point 254, Controlling vertex 256 and transistor 262 and 264.First node 252 and Section Point 254 can be used for being connected with corresponding node 152A or node 154A, or connect with corresponding node 152B or node 154B.Transistor 262 has the drain electrode end and source terminal that link together with first node 252.Transistor 262 has the gate terminal be connected with Controlling vertex 256.Transistor 264 has the drain electrode end and source terminal that link together with Section Point 254.Transistor 264 has the gate terminal be connected with Controlling vertex 256.Controlling vertex 256 is configured to receive analog control signal V
cAP, such as, the control signal on 128A or 128B of path.In response to control signal V
cAPvoltage level, the total capacitance between node 252 and 254 is adjustable.In certain embodiments, transistor 262 and 264 is P-type crystal pipe or N-type transistor.
In FIG, two oscillator 100A and 100B are only described.But, in certain embodiments, in an integrated circuit, there is the plural oscillator for generated clock signal.And the inductance component 110A of oscillator 100A or the inductance component 110B of oscillator 100B can with the plural inductance component magnetic coupling in two or more oscillator.
Such as, Fig. 3 is the schematic diagram of six oscillator 300A to 300F according to one or more embodiment.Oscillator 300A to 300F has the configuration similar with above-mentioned oscillator 100A.In addition, oscillator 300A to 300F has corresponding inductance component 310A to 310F.Omit other details of oscillator 300A to 300F.
As shown in Figure 3, inductance component 310A and 310B magnetic coupling (dotted arrow 380A); Inductance component 310B and 310C magnetic coupling (dotted arrow 380B); Inductance component 310D and 310E magnetic coupling (dotted arrow 380C); Inductance component 310E and 310F magnetic coupling (dotted arrow 380D); Inductance component 310A and 310D magnetic coupling (dotted arrow 380E); Inductance component 310B and 310E magnetic coupling (dotted arrow 380F); And inductance component 310C and 310F magnetic coupling (dotted arrow 380G).In this embodiment, Mutual Inductance Coupling 380A to 380G is configured to make oscillator 300A to 300F generate the oscillator signal with approximately uniform preset frequency and approximately uniform phase place.
In certain embodiments, on inductance component 310A to 310F is formed on the same substrate, is formed in same package substrate various substrates, on the various substrates that is formed in substrate stack or be formed on the various substrates of die-stack part.In certain embodiments, the distance corresponded in inductance component 310A to 310F between two inductance components of in magnetic coupling 380A to 380G is equal to or less than the half of the electromagnetic wavelength with preset frequency.In certain embodiments, the preset frequency of outputting oscillation signal is in the scope of 100MHz to 20GHz.
Fig. 4 is the functional block diagram of a set of principal and subordinate's fine-adjusting unit 400 according to one or more embodiment.This cover principal and subordinate fine-adjusting unit 400 is connected to master oscillator 402 and from oscillator 404, and master oscillator 402 and the outputting oscillation signal from oscillator 404 can control the resonance frequency from oscillator 404 based on the comparison.In certain embodiments, master oscillator 402 corresponds to the oscillator 100B in Fig. 1, corresponds to oscillator 100A from oscillator 404, and can regulate by controlling trimmer capacitor 124A from the resonance frequency of oscillator 404.
This cover principal and subordinate fine-adjusting unit 400 comprises first phase comparator 412, second phase comparator 414, control unit 416, first conductive path 422, second conductive path 424, first frequency divider 432 and the second frequency divider 434.
First frequency divider 432 arranges near master oscillator 402 and is electrically connected to master oscillator 402.First frequency divider 432 is configured to the outputting oscillation signal CLK_M receiving master oscillator 402, and carrys out generating reference signal CLK_MR by carrying out frequency division with estimated rate N to outputting oscillation signal CLK_M.In certain embodiments, N is positive integer.In certain embodiments, N is in the scope of 4 to 16.Second frequency divider 434 is near arranging from oscillator 404 and being electrically connected to from oscillator 404.Second frequency divider 434 is configured to receive the outputting oscillation signal CLK_S since oscillator 404, and carrys out generating reference signal CLK_SR by carrying out frequency division with estimated rate N to outputting oscillation signal CLK_S.
In certain embodiments, omit the first frequency divider 432 and the second frequency divider 434, and oscillator signal CLK_M and CLK_S is used as reference signal CLK_MR and reference signal CLK_SR.
First phase comparator 412 is arranged near master oscillator 402.Second phase comparator 414 is near arranging from oscillator 404.First conductive path 422 and the second conductive path 424 are arranged on master oscillator 402 and between oscillator 404.The reference signal CLK_MR that first phase comparator 412 is configured to according to carrying out master oscillator 402 generates first phase error signal 442 with the time delayed signal CLK_SR ' of reference signal CLK_SR after transmitting through the first conductive path 422 since oscillator 404.Second phase comparator 414 is configured to generate second phase error signal 444 according to the reference signal CLK_SR since oscillator 404 with the time delayed signal CLK_MR ' of reference signal CLK_MR after transmitting through the second conductive path 424 carrying out master oscillator 402.
Control unit 416 is configured to generate according to first phase error signal 442 and second phase error signal 444 the harmonic ringing V transferred to from oscillator 404
tUNE.In certain embodiments, harmonic ringing V
tUNEcan be used as the analog control signal V of Fig. 2 B
cAPor as the analog control signal for regulating trimmer capacitor 124A transmitted by the path 128A of Fig. 1.
Fig. 5 is the schematic diagram of the pulse distribution network 500 according to one or more embodiment.In certain embodiments, pulse distribution network 500 can be used for providing control signal by the switching device 140A of path 170A to oscillator 100A, and provides control signal by the switching device 140B of path 170B to oscillator 100B.
Pulse distribution network 500 comprises impulse generator 510, driver 520 and is arranged to one or more conductive path with H tree structure.Two or more oscillator 532 and 534 is connected to two ends of H tree.In certain embodiments, oscillator 532 corresponds to the oscillator 100A in Fig. 1, and oscillator 534 corresponds to oscillator 100B.
Impulse generator 510 is configured to production burst signal, and this pulse signal can be used as the control signal of switching device in corresponding oscillator or reset device.In certain embodiments, pulse signal has pulse frequency, and the preset frequency of the outputting oscillation signal of oscillator 532 and 534 is integral multiples of this pulse frequency.Pulse signal transmission to oscillator 532 and 534, with by outputting oscillation signal being set as predetermined voltage level in response to the switching device of the correspondence of pulse signal in oscillator.Therefore, according to pulse signal, the rising edge of outputting oscillation signal or the sequential of trailing edge of oscillator 532 and 534 are synchronous.
H tree shown in Fig. 5 is Pyatyi H tree, comprising: one (2
0) first order conductive path 541; Article two, (2
1) second level conductive path 543a and 543b, be connected to the end of the correspondence in path 541 respectively; Article four, (2
2) third level conductive path 545a, 545b, 545c and 545d, be connected to the end of the correspondence of path 543a or 543b respectively; Article eight, (2
3) fourth stage conductive path 547a to 547i, be connected to the end of the correspondence of path 545a to 545d respectively; And 16 (2
4) level V conductive path 549a to 549p, be connected to the end of the correspondence of path 547a to 547i respectively.Each end of level V conductive path 549a to 549p is connected to the switching device of the correspondence of multiple oscillator.Such as, an end of path 549a is connected to oscillator 532, and an end of path 549b is connected to oscillator 534.In certain embodiments, each end of level V conductive path 549a to 549p has identical wiring distance.Therefore, be configured to pulse signals pulse signal transmission with allotment period from driver 520 to the conductive path of the end of the correspondence of level V conductive path 549a to 549p and apply (impose) substantially identical time delay.
Driver 520 is configured to provide enough current driving ability with the pulse signal transmission will generated by impulse generator 510 to multiple ends of level V conductive path 549a to 549p.In certain embodiments, additional driver 552,554,556 and 558 is positioned at the end of second level conductive path 543a and 543b.In certain embodiments, additional driver 552,554,556 and 558 is omitted.In certain embodiments, additional driver 552,554,556 and 558 is arranged on the end of the correspondence of another grade of conductive path in H tree.
Therefore, at least three kinds of diverse ways making the outputting oscillation signal of two or more oscillator (oscillator 100A and 100B in such as Fig. 1) synchronous are the foregoing described: magnetic coupling (with reference to figure 1 and Fig. 3 Suo Shi); Principal and subordinate's fine setting (shown in figure 4); And impulses injection (shown in figure 5).In certain embodiments, magnetic coupling and principal and subordinate is used to finely tune mechanism to make two or more oscillator 100A and 100B synchronous.In certain embodiments, magnetic coupling and impulses injection mechanism is used to make two or more oscillator 100A and 100B synchronous.In certain embodiments, magnetic coupling, principal and subordinate's fine setting and impulses injection mechanism is used to make two or more oscillator 100A and 100B synchronous.
Fig. 6 is the flow chart of the method 600 making oscillator (all oscillator 100A and 100B as shown in Figure 1) synchronous according to one or more embodiment.Should be appreciated that, additional operation can be performed before, during and/or after the method 600 shown in Fig. 6, and only can briefly describe some other technique herein.
In step 610, operated oscillator is with outputting oscillation signal.Such as, in certain embodiments, operated oscillator 100A is to export the first oscillator signal at node 152 place, and operated oscillator 100B is with at node 152B place's output second oscillator signal.
In step 620, the inductance component magnetic coupling of each oscillator.Such as, in certain embodiments, the inductance component 110A of oscillator 100A and the inductance component 110B magnetic coupling of oscillator 100B, with the difference on the frequency between the outputting oscillation signal reducing oscillator 100A and oscillator 100B or phase difference.
In act 630, impulses injection technique is performed to multiple oscillator.Such as, in certain embodiments, impulses injection technique is performed to oscillator 100A and oscillator 100B.In certain embodiments, step 630 comprises: production burst signal (step 632), by the first conductive path by pulse signal transmission to the switching device 140A of oscillator 100A, and by the second conductive path by pulse signal transmission to the switching device 140B of oscillator 100B.In certain embodiments, the first conductive path and the second conductive path are configured to pulse signals and apply substantially identical time delay.
In certain embodiments, step 630 also comprises: by the switching device 140A in response to pulse signal, first oscillator signal of oscillator 100A is set as the first predetermined voltage level (step 634); And by the switching device 140B in response to pulse signal, second oscillator signal of oscillator 100B is set as the first predetermined voltage level (step 636).
The method proceeds to step 640, wherein performs principal and subordinate to two or more oscillator and finely tunes technique.Such as, in certain embodiments, principal and subordinate is performed to oscillator 100A and oscillator 100B and finely tune technique.As shown in Fig. 6 and Fig. 4, step 640 comprises: carry out generating reference signal CLK_MR (step 642) by carrying out frequency division with predetermined ratio to the oscillator signal coming self-oscillator 402 or 100B; And carry out generating reference signal CLK_SR (step 643) by carrying out frequency division with estimated rate to the oscillator signal coming self-oscillator 404 or 100A.
And, in step 645, generate first phase error signal 442 based on the time delayed signal CLK_SR ' of reference signal CLK_MR and reference signal CLK_SR after transmitting through conductive path 422.In step 646, generate second phase error signal 444 based on the time delayed signal CLK_MR ' of reference signal CLK_SR and reference signal CLK_MR after transmitting through conductive path 424.In step 648, go out difference signal 444 based on first phase error signal 442 and second phase and generate harmonic ringing V
tUNE.
As shown in Fig. 6 and Fig. 1, in step 649, based on harmonic ringing V
tUNEregulate frequency or the phase place of the oscillator signal generated by oscillator 404 or 100A.
In certain embodiments, when making oscillator 100A and 100B of Fig. 1 synchronous, omit step 630 and/or step 640.
And the pulse distribution network 500 in Fig. 5 and impulses injection technique (step 630) can be applicable to the oscillator of other types and are not limited to LC resonant oscillator.In certain embodiments, above-mentioned impulses injection technique or impulses injection mechanism also can be applicable to the oscillator of the special type being called as ring oscillator.
Such as, Fig. 7 is the schematic diagram of the ring oscillator 700 according to one or more embodiment.Oscillator 700 has output node 702 and P inverter 710-1 to 710-P, and wherein P is odd number.Inverter 710-1 to 710-P connects.And the output of afterbody inverter 710-P is connected with output node 702, and the input of first stage inverter 710-1 is connected with the output of inverter 710-P.Inverter 710-1 to 710-P is configured as active feedback device and is configured to generate oscillator signal at output node 702 place.Another inverter 720 has the input being configured to return pulse signal and the output be connected with first node 702.Inverter 720 is used as reset device, and this reset device is configured to, in response to pulse signal, the outputting oscillation signal at node 724 place is set as predetermined voltage level.In certain embodiments, be similar to oscillator 700 two or more ring oscillators (as, oscillator 532 and 534 in Fig. 5) be connected to multiple ends of the pulse distribution network being similar to pulse distribution network 500, to make the outputting oscillation signal of this two or more ring oscillator synchronous.
Fig. 8 is the schematic diagram of another ring oscillator 800 according to one or more embodiment.Oscillator 800 has a pair output node 802 and 804, and Q differential amplifier 810-1 to 810-Q, and wherein Q is odd number.Amplifier 810-1 to 810-Q is connected in series.The output of afterbody amplifier 810-Q is connected with output node 802 and 804, and the input of the first rank amplifier 810-1 is connected with the output of amplifier 810-Q.Amplifier 810-1 to 810-Q is configured to active feedback device and generates a pair differential vibrating signal at output node 802 and 804 place.An amplifier (such as amplifier 810-1) also comprises switching device or reset device, and this switching device or reset device are configured to, in response to pulse signal, the output of amplifier 810-1 is set as predetermined voltage level.In certain embodiments, any differential amplifier in amplifier 810-1 to 810-Q all can be used for pulse signal and injects.In certain embodiments, be similar to oscillator 800 two or more ring oscillators (as, oscillator 532 and 534 in Fig. 5) be connected to multiple ends of the pulse distribution network being similar to pulse distribution network 500, to make the outputting oscillation signal of this two or more oscillator synchronous.
Fig. 9 is the top view comprising a part for the circuit 900 of coupled structure 910 and the first and second corresponding inductance components 922 and 924 according to one or more embodiment.In certain embodiments, inductance component 922 and 924 is corresponding to inductance component 110A and 110B in Fig. 1 or corresponding to the inductance component 310A to 310F in Fig. 3.In certain embodiments, coupled structure 910 is configured to contribute to the magnetic coupling 180 in Fig. 1 or the magnetic coupling 380A to 380G in Fig. 3.
One group of conductive path 916 that coupled structure 910 comprises the first galvanic circle 914, galvanic circle 912, second and is electrically connected with the second galvanic circle 914 the first galvanic circle 912.The loop shape of the first galvanic circle 912 and the second galvanic circle 914 is octagon.In certain embodiments, the loop shape of the first galvanic circle 912 and the second galvanic circle 914 is polygon or circle.First galvanic circle, galvanic circle 912, second 914 and one group of conductive path 916 are formed in multiple interconnection layers of one or more chip.From the angle views of top view, the first galvanic circle 912 is around the first inductance component 922.From the angle views of top view, the second galvanic circle 914 is around the second inductance component 924.
First inductance component 922 has the signal port 922a of the opening of the coil corresponding to inductance component 922, the center 922b of coil and port direction 922c.Second inductance component 924 has the signal port 924a of the opening of the coil corresponding to inductance component 924, the center 924b of coil and port direction 924c.In fig .9, port direction 922c and 924c points to identical direction.In certain embodiments, port direction 922c and 924c points to different directions.
First galvanic circle 912 comprises first end 912a and the second end 912b.Second galvanic circle 914 comprises first end 914a and the second end 914b.One group of conductive path 916 comprises the first conductive path 916a and the second conductive path 916b.The first end 912a of the first galvanic circle 912 is electrically connected with the first end 914a of the second galvanic circle 914 by the first conductive path 916a.Second end 912b of the first galvanic circle 912 is electrically connected with the second end 914b of the second galvanic circle 914 by the second conductive path 916b.Length L is defined as the length at interval between the first galvanic circle 912 and the second galvanic circle 914.In certain embodiments, length L is equal to or greater than 100 μm.
In certain embodiments, in response to the first magnetic field generated by the first inductance component 922, generate induced current at the first galvanic circle 912 place.This induced current is transferred to the second galvanic circle 914 by this group conductive path 916 and generated the second magnetic field in the second galvanic circle 914.Therefore, the dependency degree of mutual inductance to the Distribution of Magnetic Field in the first magnetic field between the first inductance component 922 and the second inductance component 924 is low, and has higher dependency degree to the second magnetic field regenerated by induced current.As a result, the mutual inductance between the first inductance component 922 and the second inductance component 924 does not rely on the distance between inductance component 922 and inductance component 924, such as when length L is equal to or greater than 100 μm.
Figure 10 is the diagram changed with frequency Freq according to the coupling coefficient K when having or do not have coupled structure between two inductance components (such as, inductance component 922 and 924) of one or more embodiment.Curve 1010 represents when inductance component 922 and 924 does not have coupled structure 910 and distance is between the two set as 1000 μm, the coupling coefficient K between inductance component 922 and 924.Curve 1020a represents when inductance component 922 and 924 has coupled structure 910 and length L is between the two set as 500 μm, the coupling coefficient K between inductance component 922 and 924; Coupling coefficient K when curve 1020b represents that length L is 1000 μm; Coupling coefficient K when curve 1020c represents that length L is 2000 μm; Coupling coefficient K when curve 1020d represents that length L is 3000 μm; And the coupling coefficient K of curve 1020e when representing that length L is 5000 μm.Reference line 1030 represents that K value is 0.001 (10
-3).
Coupling coefficient K is defined as:
M is the mutual inductance between inductance component 922 and 924, L
1the self-induction of the first inductance component 922, and L
2it is the self-induction of the second inductance component 924.If K value is greater than 0.001 (reference line 1030), the oscillator so corresponding to inductance component 922 and 924 has the magnetic coupling being enough to keep phase difference between the two stable.
As shown in the curve 1010 of Figure 10, distance is 1000 μm, and the enough magnetic couplings between inductance component 922 and 924 are no longer guaranteed in the configuration without coupled structure 910.On the contrary, curve 1020a to 1020e shows, and the embodiment with coupled structure 910 makes the magnetic coupling between inductance component 922 and 924 not rely on distance between the two.As shown in Figure 10, after 500MHz, be set as that the curve 1020a to 1020e of 500 μm, 1000 μm, 2000 μm, 3000 μm and 5000 μm is on reference line 1030 respectively corresponding to length L.
Composition graphs 11A to Figure 15 illustrates some possible changes of the embodiment of Fig. 9 further.In certain embodiments, the such as change shown in Figure 11 A to Figure 15 can be combined, with the another different change that the thought formed from Fig. 9 and Figure 11 A to Figure 15 presents is consistent.
Figure 11 A is the coupled structure 910A according to one or more embodiment and the top view of corresponding inductance component 922 and 924.With the same or similar assembly of the assembly in Fig. 9, there is identical reference number, omit it and describe in detail.
Compared with coupled structure 910, coupled structure 910A comprises one group of conductive path 916A of replacement one group of conductive path 916.One group of conductive path 916A comprises the first conductive path 916Aa and the second conductive path 916Ab.Connect up to the first conductive path 916Aa and the second conductive path 916Ab, make the angle views from top view, the first conductive path 916Aa intersects (crossover) with the second conductive path 916Ab at position 1110 place.
Figure 11 B is the coupled structure 910B according to one or more embodiment and the top view of corresponding inductance component 922 and 924.With the same or similar assembly of the assembly in Fig. 9, there is identical reference number, omit it and describe in detail.
Compared with coupled structure 910, coupled structure 910B comprises one group of conductive path 916B of replacement one group of conductive path 916.One group of conductive path 916B comprises the first conductive path 916Ba and the second conductive path 916Bb.Connect up to the first conductive path 916Ba and the second conductive path 916Bb, make the angle views from top view, each in the first conductive path 916Ba and the second conductive path 916Bb all has angled turning at position 1120 place.
Figure 11 C is the coupled structure 910C according to one or more embodiment and the top view of corresponding inductance component 922 and 924.With the same or similar assembly of the assembly in Fig. 9, there is identical reference number, omit it and describe in detail.
Compared with coupled structure 910, coupled structure 910C comprises one group of conductive path 916C of replacement one group of conductive path 916.One group of conductive path 916C comprises the first conductive path 916Ca and the second conductive path 916Cb.Connect up to the first conductive path 916Ca and the second conductive path 916Cb, make the angle views from top view, each in the first conductive path 916Ca and the second conductive path 916Cb all has angled turning at position 1130 place.And from the angle views of top view, the first conductive path 916Ca intersects at position 1130 place and the second conductive path 916Cb.
Figure 12 A is the coupled structure 1210A according to one or more embodiment and the top view of corresponding inductance component 1222 and 1224.Coupled structure 1210A comprises: the first galvanic circle 1212A; Second galvanic circle 1214A; First group of conductive path 1216A, is electrically connected galvanic circle 1212A and 1214A; 3rd galvanic circle 1212B; 4th galvanic circle 1214B; And second group of conductive path 1216B, galvanic circle 1212B and 1214B is electrically connected.First inductance component 1222 and the first galvanic circle 1212A magnetic coupling.Second inductance component 1224 and the 3rd galvanic circle 1212B magnetic coupling.Second galvanic circle 1214A and the 4th galvanic circle 1214B magnetic coupling.From the angle views of top view, the second galvanic circle 1214A is around the 4th galvanic circle 1214B.
In certain embodiments, in response to the first magnetic field generated by the first inductance component 1222, at the first galvanic circle 1212A place generation first induced current.First induced current transfers to the second galvanic circle 1214A by first group of conductive path 1216A, and generates the second magnetic field in the second galvanic circle 1214A.In response to the second magnetic field, at the 4th galvanic circle 1214B place generation second induced current.Second induced current transfers to the 3rd galvanic circle 1212B by second group of conductive path 1216B, and generates the 3rd magnetic field in the 3rd galvanic circle 1212B.Therefore, the second inductance component 1224 passes through by the 3rd magnetic field of the second induced current regeneration in the 3rd galvanic circle 1212B and the first inductance component 1222 magnetic coupling.
Figure 12 B is the coupled structure 1210B according to one or more embodiment and the top view of corresponding inductance component 1222 and 1224.With the same or similar assembly of the assembly in Figure 12 A, there is identical reference number, and omit its detailed description.Compared with coupled structure 1210A, from the angle views of top view, the second galvanic circle 1214A and the 4th galvanic circle 1214B is overlapping.In other words, the second galvanic circle 1214A and the 4th galvanic circle 1214B has identical size and dimension, but is formed on different interconnection layers.
Figure 12 C is the coupled structure 1210C according to one or more embodiment and the top view of corresponding inductance component 1222,1224 and 1226.With the same or similar assembly of the assembly in Figure 12 A, there is identical reference number, and omit its detailed description.Compared with coupled structure 1210A, the second galvanic circle 1214A and the 4th galvanic circle 1214B is arranged to and additional inductance component 1226 magnetic coupling.And from the angle views of top view, the 4th galvanic circle 1214B is around the second galvanic circle 1214A.
Figure 12 D is the coupled structure 1210D according to one or more embodiment and the top view of corresponding inductance component 1222,1224 and 1226.With the same or similar assembly of the assembly in Figure 12 B, there is identical reference number, and omit its detailed description.Compared with coupled structure 1210B, the second galvanic circle 1214A and the 4th galvanic circle 1214B is arranged to and additional inductance component 1226 magnetic coupling.
Figure 12 E is the coupled structure 1210E according to one or more embodiment and the top view of corresponding inductance component 1222,1224 and 1226.With the same or similar assembly of the assembly in Figure 12 D, there is identical reference number, and omit its detailed description.Compared with coupled structure 1210D, one group of conductive path 1216B ' is used for replacement second group of conductive path 1216B, and a conductive path wherein in one group of conductive path 1216B ' intersects at position 1230 place and another conductive path in one group of conductive path 1216B '.
Figure 13 A is the coupled structure 1310A according to one or more embodiment and the top view of corresponding inductance component 1322,1324 and 1326.Coupled structure 1310A comprises three galvanic circles 1312,1314 and 1316 be electrically coupled together by one group of conductive path 1318.Each magnetic coupling corresponding with inductance component 1322,1324 and 1326 in galvanic circle 1312,1314 and 1316.
Figure 13 B is the coupled structure 1310B according to one or more embodiment and the top view of corresponding inductance component 1322,1324,1326 and 1327.With the same or similar assembly of the assembly in Figure 13 A, there is identical reference number, and omit its detailed description.Coupled structure 1310B comprises four galvanic circles 1312,1314,1316 and 1317 be electrically coupled together by one group of conductive path 1318.Each magnetic coupling corresponding with inductance component 1322,1324,1326 and 1327 in galvanic circle 1312,1314,1316 and 1317.
Figure 14 is the coupled structure 1410 according to one or more embodiment and the top view of corresponding inductance component 922 and 924.With the same or similar assembly of the assembly in Fig. 9, there is identical reference number, and omit its detailed description.Coupled structure 1410 comprises two galvanic circles 1412 and 1414 be electrically coupled together by one group of conductive path 1416.Each magnetic coupling corresponding with inductance component 922 and 924 in galvanic circle 1412 and 1414.And from the angle views of top view, inductance component 922 is around galvanic circle 1412; And from the angle views of top view, inductance component 924 is around galvanic circle 1414.
Figure 15 is the coupled structure 910 with shielding construction 1512 and 1514 according to one or more embodiment and the top view of corresponding inductance component 922 and 924.With the same or similar assembly of the assembly in Fig. 9, there is identical reference number, and omit its detailed description.Compared with the circuit 900 in Fig. 9, the circuit shown in Figure 15 also comprises the first shielding construction 1512 and secondary shielding structure 1514.From the angle views of top view, one group of conductive path 916 at least partially between the first shielding construction 1512 and secondary shielding structure 1514.
Figure 16 is the flow chart making the magnetic-coupled method 1600 of inductance component according to one or more embodiment.In certain embodiments, method 1600 can be combined with the circuit in Fig. 9 or Figure 12 A.In certain embodiments, method 1600 also can be combined with the circuit in Figure 11 A to Figure 11 C, Figure 12 B to Figure 12 E or Figure 13 A to Figure 15.Should be appreciated that, additional step can be performed before, during and/or after the method 1600 shown in Figure 16, and only can briefly describe some other technique herein.
Technique starts from step 1610, wherein in response to the first magnetic field of the first oscillator generated by the first inductance component 922 or 1222, generates induced current in the first galvanic circle 912 or 1212A place.
Technique proceeds to step 1620, and wherein induced current transfers to the second galvanic circle 914 or 1214A by one group of conductive path 916 being electrically connected first and second galvanic circle or 1216A.
Technique proceeds to step 1630, wherein in response to the induced current by the second galvanic circle 914 or 1214A, generates the second magnetic field.
For the coupled structure with or similar configuration identical with Figure 12 A or Figure 12 B to Figure 12 E, technique proceeds to step 1640, wherein in response to the second magnetic field, generates another induced current at the 4th 1214B place, galvanic circle.
Technique proceeds to step 1650, and wherein another induced current is organized conductive path 1216B by another electrical connection the 3rd with the 4th galvanic circle and transferred to the 3rd galvanic circle 1212B.
As a result, the second inductance component 924 or 1224 of the second oscillator passes through inductance component 922 or 1222 magnetic coupling of coupled structure 910 or 1210 and the first oscillator.
According to an embodiment, a kind of circuit comprises coupled structure and the first inductance component.One group of conductive path that coupled structure comprises two or more galvanic circle and is electrically connected two or more galvanic circle.First galvanic circle magnetic coupling of the first inductance component and two or more galvanic circle.
According to another embodiment, a kind of circuit comprises: the first oscillator, comprises inductance component; Second oscillator, comprises inductance component; And coupled structure.Coupled structure comprises: the first galvanic circle, with the inductance component magnetic coupling of the first oscillator; Second galvanic circle, with the inductance component magnetic coupling of the second oscillator; And one group of conductive path, the first galvanic circle is electrically connected with the second galvanic circle.
According to another embodiment, a kind of method comprises: the first magnetic field generated in response to the first inductance component by the first oscillator, generates induced current at the first galvanic circle place of coupled structure.Induced current transfers to the second galvanic circle of coupled structure by one group of conductive path of coupled structure, and wherein first and second galvanic circle is electrically connected by this group conductive path.Second inductance component of the second oscillator is by the first inductance component magnetic coupling of coupled structure and the first oscillator.
Discuss the parts of some embodiments above, make the various aspects that the present invention may be better understood for those of ordinary skill in the art.It will be understood by those skilled in the art that to use easily and to design based on the present invention or to change other for the process and the structure that reach the object identical with introduced embodiment here and/or realize same advantage.Those of ordinary skill in the art also it should be appreciated that this equivalent constructions does not deviate from the spirit and scope of the present invention, and when not deviating from the spirit and scope of the present invention, can carry out multiple change, replacement and change.
Claims (10)
1. a circuit, comprising:
Coupled structure, comprising:
Two or more galvanic circle; With
One group of conductive path, by described two or more galvanic circles electrical connection; And
First inductance component, with the first galvanic circle magnetic coupling of described two or more galvanic circle.
2. circuit according to claim 1, wherein, top-down observation, described first galvanic circle is around described first inductance component.
3. circuit according to claim 1, wherein, top-down observation, described first inductance component is around described first galvanic circle.
4. circuit according to claim 1, wherein:
First galvanic circle of described two or more galvanic circle comprises first end and the second end;
Second galvanic circle of described two or more galvanic circle comprises first end and the second end; And
Described one group of conductive path comprises:
First conductive path, is electrically connected the first end of the first end of described first galvanic circle with described second galvanic circle; With
Second conductive path, is electrically connected second end of the second end of described first galvanic circle with described second galvanic circle.
5. circuit according to claim 4, wherein, connect up to described first conductive path and described second conductive path, make top-down observation, described first conductive path intersects with described second conductive path.
6. circuit according to claim 4, wherein, connects up to described first conductive path and described second conductive path, makes top-down observation, all have angled turning in described first conductive path and described second conductive path.
7. a circuit, comprising:
First oscillator, comprises inductance component;
Second oscillator, comprises inductance component; And
Coupled structure, comprising:
First galvanic circle, with the inductance component magnetic coupling of described first oscillator;
Second galvanic circle, with the inductance component magnetic coupling of described second oscillator; With
One group of conductive path, is electrically connected described first galvanic circle with described second galvanic circle.
8. circuit according to claim 7, wherein:
Top-down observation, described first galvanic circle is around the inductance component of described first oscillator; And
Top-down observation, described second galvanic circle is around the inductance component of described second oscillator.
9. a method, comprising:
In response to the first magnetic field that the first inductance component by the first oscillator generates, generate induced current at the first galvanic circle place of coupled structure; And
By one group of conductive path of described coupled structure, described induced current is transferred to the second galvanic circle of described coupled structure, wherein, described first galvanic circle is electrically connected with described second galvanic circle by described one group of conductive path,
Second inductance component of the second oscillator is by the first inductance component magnetic coupling of described coupled structure and described first oscillator.
10. method according to claim 9, also comprises:
In response to the induced current of the second galvanic circle by described coupled structure, generate the second magnetic field;
In response to described second magnetic field, generate another induced current at the 3rd galvanic circle place; And
By another group conductive path of described coupled structure another induced current described transferred to the 4th galvanic circle of described coupled structure, wherein, described 3rd galvanic circle is electrically connected with described 4th galvanic circle by another group conductive path described.
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| US14/319,787 US9473152B2 (en) | 2013-11-08 | 2014-06-30 | Coupling structure for inductive device |
| US14/319,787 | 2014-06-30 |
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| WO2020132963A1 (en) * | 2018-12-26 | 2020-07-02 | 华为技术有限公司 | Integrated circuit comprising resonant circuit |
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| TWI588850B (en) | 2017-06-21 |
| KR101729400B1 (en) | 2017-04-21 |
| CN105306040B (en) | 2019-01-08 |
| KR20160002400A (en) | 2016-01-07 |
| TW201612930A (en) | 2016-04-01 |
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