CN105305087A - Button-shaped terahertz wave polarization converter - Google Patents
Button-shaped terahertz wave polarization converter Download PDFInfo
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- CN105305087A CN105305087A CN201510873421.XA CN201510873421A CN105305087A CN 105305087 A CN105305087 A CN 105305087A CN 201510873421 A CN201510873421 A CN 201510873421A CN 105305087 A CN105305087 A CN 105305087A
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Abstract
The invention discloses a button-shaped terahertz wave polarization converter. The button-shaped terahertz wave polarization converter comprises a signal input end, a signal output end, a button-shaped structure transmission layer, a matrix and a metal level structure, wherein the button-shaped structure transmission layer is connected with the matrix, and comprises 9 button-shaped metal period units; each button-shaped metal period unit includes a first quarter circular metal structure, a second quarter circular metal structure, a third quarter circular metal structure, a fourth quarter circular metal structure and a double-opening circular ring structure; when a signal is input from the signal input end, and successively passes the button-shaped structure transmission layer and the matrix, and then is output through the metal layer structure; when the input signal is a TE wave, the signal output end outputs a TM wave; when the input signal is a TM wave, the signal output end outputs a TE wave, so that the polarization transition function can be realized; and the button-shaped structure transmission layer realizes conversion of the polarization mode. The button-shaped terahertz wave polarization converter has the advantages of being simple and compact in structure, being small in size, being high in beam splitting rate, being convenient for processing, and the like.
Description
Technical field
The present invention relates to terahertz polarization transducer, particularly relate to a kind of button-type terahertz polarization transducer.
Background technology
In recent years, the THz wave on electromagnetic spectrum between the millimeter wave developing quite maturation and infrared light is undoubtedly a brand-new research field.THz wave frequency 0.1 ~ 10THz, wavelength is 30 μm ~ 3mm.For a long time, produce and detection method owing to lacking effective THz wave, compare with optical technology with traditional microwave technology, people are very few to the understanding of this wave band properties of electromagnetic radiation, to such an extent as to this wave band becomes the Terahertz space in electromagnetic spectrum.Along with the breakthrough of terahertz emission source and Detection Techniques, the advantageous characteristic of Terahertz uniqueness be found and detect in material science, detection of gas, biology and medical science, to communicate etc. in show huge application prospect.Can say that Terahertz Technology science is not only the important foundation problem in scientific technological advance, be again the great demand of generation information industry and basic science development.Efficient terahertz emission source and ripe detection technique are the most important condition promoting Terahertz Technology scientific development and application, but the extensive use of Terahertz Technology be unable to do without the support meeting the practical function element that different application field requires.In numerous application systems such as Terahertz communication, multispectral imaging, physics, chemistry, be urgent to the demand of the function elements such as terahertz waveguide, switch, polarization converter, filtering and coupling.
Terahertz polarization transducer is the important THz wave function element of a class, and terahertz polarization transducer has become focus and the difficult point of research both at home and abroad in recent years.But existing terahertz polarization transducer mostly also exists, and complex structure, beam splitting rate are low, high in cost of production shortcomings, so the terahertz polarization transducer that research structure is simple, transfer ratio is high, cost is low is significant.
Summary of the invention
The invention provides a kind of button-type terahertz polarization transducer, technical scheme is as follows:
Button-type terahertz polarization transducer comprises signal input part, signal output part, button-type architecture transport layer, matrix, metal-layer structure; Button-type architecture transport layer is made up of 9 the button-type metal periodic units equidistantly arranged in 3 × 3, button-type metal periodic unit central row shows the first quadrant shape metal structure, the second quadrant shape metal structure, the 3rd quadrant shape metal structure and the 4th quadrant shape metal structure, and outer ring is around a two open circles ring structure; Metal-layer structure is rearranged from left to right in turn by 15 rectangular metal; Signal inputs from signal input part, successively after button-type architecture transport layer, matrix, exports through metal-layer structure, when input signal is TE ripple, signal output part exports TM ripple, when input signal is TM ripple, signal output part exports TE ripple, realizes polarization conversion function.
Described button-type architecture transport layer and the thickness of metal-layer structure are 1 μm ~ 2 μm.The thickness of described matrix is 500 μm ~ 520 μm, and length is 99 μm ~ 101 μm, and width is 99 μm ~ 101 μm.In described metal-layer structure, the length of rectangular metal is 99 μm ~ 101 μm, and width is 0.9 μm ~ 1.1 μm, and the spacing between adjacent rectangle metal is 6 μm ~ 7 μm.The spacing of described each adjacent button-type metal periodic unit is 10 μm ~ 12 μm.The first described quadrant shape metal structure, the second quadrant shape metal structure, the 3rd quadrant shape metal structure, the 4th quadrant shape metal structure parameters of structural dimension are identical, and radius is 5 μm ~ 6 μm.Outside described two open circles ring structures, radius of a circle is 9 μm ~ 11 μm, inner side radius of a circle 6 μm ~ 8 μm, and its upper right and radian corresponding to lower-left opening are 15 °.The material of described matrix is High Resistivity Si material, and the material of button-type architecture transport layer and metal-layer structure is copper.
The present invention has simple and compact for structure, and size is little, and transfer ratio is high, is convenient to the advantages such as processing.
Accompanying drawing illustrates:
Fig. 1 is the structural representation of button-type terahertz polarization transducer;
Fig. 2 is the structural representation of the button-type architecture transport layer of button-type terahertz polarization transducer;
Fig. 3 is the structural representation of the button-type metal periodic unit of button-type terahertz polarization transducer;
Fig. 4 is the structural representation of the metal-layer structure of button-type terahertz polarization transducer;
Fig. 5 is when being input as TE ripple, TM, TE ripple transmittance graph of the signal output part of button-type terahertz polarization transducer;
Fig. 6 is when being input as TM ripple, TE, TM ripple transmittance graph of the signal output part of button-type terahertz polarization transducer.
Embodiment
As shown in Figures 1 to 3, button-type terahertz polarization transducer comprises signal input part 1, signal output part 5, button-type architecture transport layer 2, matrix 3, metal-layer structure 4; Button-type architecture transport layer 2 is made up of 9 the button-type metal periodic units 6 equidistantly arranged in 3 × 3, button-type metal periodic unit 6 central row shows the first quadrant shape metal structure 8, second quadrant shape metal structure the 9, the 3rd quadrant shape metal structure 10 and the 4th quadrant shape metal structure 11, and outer ring is around a two open circles ring structure 7; Metal-layer structure 4 is rearranged from left to right in turn by 15 rectangular metal 12; Signal inputs from signal input part 1, successively after button-type architecture transport layer 2, matrix 3, exports through metal-layer structure 4, when input signal is TE ripple, signal output part 5 exports TM ripple, when input signal is TM ripple, signal output part 5 exports TE ripple, realizes polarization conversion function.
Described button-type architecture transport layer 2 and the thickness of metal-layer structure 4 are 1 μm ~ 2 μm.The thickness of described matrix 3 is 500 μm ~ 520 μm, and length is 99 μm ~ 101 μm, and width is 99 μm ~ 101 μm.In described metal-layer structure 4, the length of rectangular metal 12 is 99 μm ~ 101 μm, and width is 0.9 μm ~ 1.1 μm, and the spacing between adjacent rectangle metal 12 is 6 μm ~ 7 μm.The spacing of described each adjacent button-type metal periodic unit 6 is 10 μm ~ 12 μm.The first described quadrant shape metal structure 8, second quadrant shape metal structure the 9, the 3rd quadrant shape metal structure the 10, the 4th quadrant shape metal structure 11 parameters of structural dimension is identical, and radius is 5 μm ~ 6 μm.Outside described two open circles ring structures 7, radius of a circle is 9 μm ~ 11 μm, inner side radius of a circle 6 μm ~ 8 μm, and its upper right and radian corresponding to lower-left opening are 15 °.The material of described matrix 3 is High Resistivity Si material, and the material of button-type architecture transport layer 2 and metal-layer structure 4 is copper.
Embodiment 1
The thickness of button-type architecture transport layer and metal-layer structure is 1 μm.The thickness of matrix is 510 μm, and length is 100 μm, and width is 100 μm.In metal-layer structure, the length of rectangular metal is 100 μm, and width is 1 μm, and the spacing between adjacent rectangle metal is 6 μm.The spacing of each adjacent button-type metal periodic unit is 11 μm.First quadrant shape metal structure, the second quadrant shape metal structure, the 3rd quadrant shape metal structure, the 4th quadrant shape metal structure parameters of structural dimension are identical, and radius is 5.5 μm.Outside two open circles ring structure, radius of a circle is 10 μm, inner side radius of a circle 7 μm, and its upper right and radian corresponding to lower-left opening are 15 °.The material of matrix is High Resistivity Si material, and the material of button-type architecture transport layer and metal-layer structure is copper.When the input signal of button-type terahertz polarization transducer is TE ripple, the TM ripple of signal output part, TE ripple transmittance graph are as shown in Figure 4, in 0.5 ~ 1.5THz band limits, TM ripple peak power output (insertion loss) for 0.08dB, TE ripple minimum output power (extinction ratio) be 40dB.When the input signal of button-type terahertz polarization transducer is TM ripple, the TE ripple of signal output part, TM ripple transmittance graph are as shown in Figure 5, in 0.5 ~ 1.5THz band limits, TE ripple peak power output (insertion loss) for 0.09dB, TM ripple minimum output power (extinction ratio) be 41dB.Polarization conversion efficiency is high, function admirable.
Claims (8)
1. a button-type terahertz polarization transducer, is characterized in that comprising signal input part (1), signal output part (5), button-type architecture transport layer (2), matrix (3), metal-layer structure (4); Button-type architecture transport layer (2) is made up of 9 the button-type metal periodic units (6) equidistantly arranged in 3 × 3, button-type metal periodic unit (6) central row shows the first quadrant shape metal structure (8), the second quadrant shape metal structure (9), the 3rd quadrant shape metal structure (10) and the 4th quadrant shape metal structure (11), and outer ring is around a two open circles ring structure (7); Metal-layer structure (4) is rearranged from left to right in turn by 15 rectangular metal (12); Signal inputs from signal input part (1), successively after button-type architecture transport layer (2), matrix (3), export through metal-layer structure (4), when input signal is TE ripple, signal output part (5) exports TM ripple, when input signal is TM ripple, signal output part (5) exports TE ripple, realizes polarization conversion function.
2. a kind of button-type terahertz polarization transducer according to claim 1, is characterized in that the thickness of described button-type architecture transport layer (2) and metal-layer structure (4) is 1 μm ~ 2 μm.
3. a kind of button-type terahertz polarization transducer according to claim 1, it is characterized in that the thickness of described matrix (3) is 500 μm ~ 520 μm, length is 99 μm ~ 101 μm, and width is 99 μm ~ 101 μm.
4. a kind of button-type terahertz polarization transducer according to claim 1, it is characterized in that the length of rectangular metal (12) is 99 μm ~ 101 μm in described metal-layer structure (4), width is 0.9 μm ~ 1.1 μm, and the spacing between adjacent rectangle metal (12) is 6 μm ~ 7 μm.
5. a kind of button-type terahertz polarization transducer according to claim 1, is characterized in that the spacing of described each adjacent button-type metal periodic unit (6) is 10 μm ~ 12 μm.
6. a kind of button-type terahertz polarization transducer according to claim 1, it is characterized in that the first described quadrant shape metal structure (8), the second quadrant shape metal structure (9), the 3rd quadrant shape metal structure (10), the 4th quadrant shape metal structure (11) parameters of structural dimension are identical, radius is 5 μm ~ 6 μm.
7. a kind of button-type terahertz polarization transducer according to claim 1, it is characterized in that described two open circles ring structure (7) outsides radius of a circle is 9 μm ~ 11 μm, inner side radius of a circle 6 μm ~ 8 μm, its upper right and radian corresponding to lower-left opening are 15 °.
8. a kind of button-type terahertz polarization transducer according to claim 1, the material that it is characterized in that described matrix (3) is High Resistivity Si material, and the material of button-type architecture transport layer (2) and metal-layer structure (4) is copper.
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| CN201510873421.XA CN105305087B (en) | 2015-12-02 | 2015-12-02 | Button-type terahertz polarization converter |
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| CN201510873421.XA CN105305087B (en) | 2015-12-02 | 2015-12-02 | Button-type terahertz polarization converter |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107356999A (en) * | 2017-06-26 | 2017-11-17 | 陕西师范大学 | A kind of single layer nanometer structure for realizing long-wave band asymmetric transmission and preparation method thereof |
| CN109193169A (en) * | 2018-05-17 | 2019-01-11 | 重庆邮电大学 | A kind of Terahertz polarization converter based on split ring resonator |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010128425A (en) * | 2008-12-01 | 2010-06-10 | Seiko Epson Corp | Polarization converter, lighting device, and projector |
| CN102937730A (en) * | 2012-11-12 | 2013-02-20 | 中国计量学院 | Terahertz wave polarization beam splitter of L-shaped slot structure |
| CN104577352A (en) * | 2014-12-25 | 2015-04-29 | 西安交通大学 | Adjustable polarization converter based on microwave frequency band active FSS (frequency selective surface) |
| TWM505070U (en) * | 2015-03-27 | 2015-07-11 | Univ Yuan Ze | Polarization converter for array antenna |
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2015
- 2015-12-02 CN CN201510873421.XA patent/CN105305087B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010128425A (en) * | 2008-12-01 | 2010-06-10 | Seiko Epson Corp | Polarization converter, lighting device, and projector |
| CN102937730A (en) * | 2012-11-12 | 2013-02-20 | 中国计量学院 | Terahertz wave polarization beam splitter of L-shaped slot structure |
| CN104577352A (en) * | 2014-12-25 | 2015-04-29 | 西安交通大学 | Adjustable polarization converter based on microwave frequency band active FSS (frequency selective surface) |
| TWM505070U (en) * | 2015-03-27 | 2015-07-11 | Univ Yuan Ze | Polarization converter for array antenna |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107356999A (en) * | 2017-06-26 | 2017-11-17 | 陕西师范大学 | A kind of single layer nanometer structure for realizing long-wave band asymmetric transmission and preparation method thereof |
| CN107356999B (en) * | 2017-06-26 | 2020-03-24 | 陕西师范大学 | Single-layer nano structure for realizing long-wave band asymmetric transmission and preparation method thereof |
| CN109193169A (en) * | 2018-05-17 | 2019-01-11 | 重庆邮电大学 | A kind of Terahertz polarization converter based on split ring resonator |
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Address after: 313300 comprehensive building of Anji County Science and technology entrepreneurship Park, Sunshine Industrial Park, Dipu Town, Anji County, Huzhou City, Zhejiang Province Patentee after: China Jiliang University Address before: 310018, No. 258, Yuen Xue street, Jianggan Economic Development Zone, Zhejiang, Hangzhou Patentee before: China Jiliang University |
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