CN105304664A - CMOS image sensor structure and preparation method thereof - Google Patents
CMOS image sensor structure and preparation method thereof Download PDFInfo
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- CN105304664A CN105304664A CN201510719251.XA CN201510719251A CN105304664A CN 105304664 A CN105304664 A CN 105304664A CN 201510719251 A CN201510719251 A CN 201510719251A CN 105304664 A CN105304664 A CN 105304664A
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- image sensor
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Abstract
The invention relates to the field of semiconductor yield increase, and especially relates to a CMOS image sensor structure and a preparation method thereof. The film thickness is controlled in the making process based on the interference principle of light. Therefore, the loss of reflected light is reduced, and the intensity of transmitted light is increased, which is of great help to the increase of product yield.
Description
Technical field
The present invention relates to semiconductor yields and promote field, particularly relate to structure of a kind of cmos image sensor and preparation method thereof.
Background technology
Semicon industry manufacture is maked rapid progress, and the manufacturing process of product more and more becomes more meticulous.Various defect can produce the yield of product and kill and wound, and improve cause the various factors of defect also more and more to become the important means that can promote semiconductor yields.
As shown in Figure 1, for front illuminated CMOS (ComplementaryMetalOxideSemiconducto complementary metal oxide semiconductors (CMOS), referred to as CMOS) imageing sensor, the method of current industry main flow forms a deep trouth 1 by the method for etching after passivation layer terminates, then in groove, potting resin material carries out planarization, carry out the manufacture of filter 2 and lenticule 3 again, form the imageing sensor of complete structure.Although this technology can reduce the light source loss that back segment dielectric interfaces causes anaclasis; but due to the requirement of production technology; photodiode 4 must retain thin film 5 as the stop-layer of deep etching thus protection photodiode 4 surface, the thickness of this film 5 is improper still can cause light source loss.
Summary of the invention
For the problems referred to above, the invention provides a kind of structure of cmos image sensor, it is characterized in that, described structure comprises,
Photodiode area;
Contact etching barrier layer, is formed at above described photodiode area;
Silicide mask, is formed at above described contact etching barrier layer;
At least two dielectric layers, are formed at above described silicide mask;
At least one medium interlayer, is formed between described dielectric layer;
Optical channel deep trouth, by etching described dielectric layer and described medium interlayer obtains;
Protective layer film, is formed at the whole product upper surface after deep etching.
Preferably, the structure of above-mentioned cmos image sensor, wherein, described photodiode area also comprises three kinds of pixel cells, is respectively red pixel cell, green pixel cell and blue pixel cells.
Preferably, the structure of above-mentioned cmos image sensor, wherein, the thickness of the described protective layer film after the deep etching of the described photodiode area of different colours is identical.
Preferably, the structure of above-mentioned cmos image sensor, wherein, the thickness on the described contact etching barrier layer before the deep etching of the described photodiode area of different colours is identical.
A preparation method for cmos image sensor, is characterized in that, described method comprises, and provides described photodiode area, arranges described contact etching barrier layer on described photodiode area;
Deposit a silicide mask in upper end, described contact etching barrier layer, wherein, the gross thickness on silicide mask and described contact etching barrier layer controls 1/4 of the wavelength for being greater than incident light source;
Silicide mask layer described in etched portions, the described silicide mask wherein after etching and the gross thickness on described contact etching barrier layer are 1/4 of the wavelength being less than incident light source;
In dielectric layer described in the described silicide mask layer surface deposition through etching processing, and for stop-layer etches, described dielectric layer forms described optical channel deep trouth with described silicide mask;
Form described protective layer film in the whole product surface deposition after etching processing, the gross thickness of wherein said silicide mask, described contact etching barrier layer and described protective layer film is 1/4 of the wavelength of incident light source.
Preferably, above-mentioned method, wherein, the generation type of described silicide mask is passivation.
Preferably, above-mentioned method, wherein, the control mode of the thickness on described contact etching barrier layer is photoetching or etching.
Preferably, above-mentioned method, wherein, the gross thickness control mode of the described silicide mask on described photodiode area, described contact etching barrier layer and described protective layer film is vapour deposition.
Beneficial effect, the present invention relates to structure of a kind of cmos image sensor and preparation method thereof, utilize the principle of interference of light, by controlling the method for the thickness of film in manufacturing process, the loss of reverberation is reduced, and then the intensity of transmitted light increases, very large help can be produced to raising product yield.
Accompanying drawing explanation
Fig. 1 is a structure chart of existing front illuminated cmos image sensor.
Fig. 2 is a structure chart of an embodiment of illuminated cmos image sensor before the present invention.
Fig. 3 is a structure chart of an embodiment of illuminated cmos image sensor before the present invention.
Fig. 4-8 is structure charts of each flow process of an embodiment of illuminated cmos image sensor before the present invention.
Fig. 9 is the comparison diagram adopting the cmos image sensor product of the present invention compared with prior art sensitivity of green glow.
Embodiment
For the improper light source loss problem caused of light transmission film thickness, the invention provides a kind of structure of cmos image sensor, it is characterized in that, described structure comprises,
Photodiode area;
Contact etching barrier layer, is formed at above described photodiode area;
Silicide mask, is formed at above described contact etching barrier layer;
At least two dielectric layers, are formed at above silicide mask;
At least one medium interlayer, is formed between dielectric layer;
Optical channel deep trouth, is obtained by etch media layer and medium interlayer;
Protective layer film, is formed at the whole product upper surface after deep etching.
A preparation method for cmos image sensor, is characterized in that, described method comprises, and provides described photodiode area, arranges described contact etching barrier layer on described photodiode area;
Deposit a silicide mask layer in upper end, described contact etching barrier layer, wherein, the gross thickness on silicide mask and described contact etching barrier layer controls 1/4 of the wavelength for being greater than incident light source;
Silicide mask layer described in etched portions, the described silicide mask wherein after etching and the gross thickness on described contact etching barrier layer are 1/4 of the wavelength being less than incident light source;
In dielectric layer described in the described silicide mask layer surface deposition through etching processing, and for stop-layer etches, described dielectric layer forms described optical channel deep trouth with described silicide mask;
Form described protective layer film in the whole product surface deposition after etching processing, the gross thickness of wherein said silicide mask, described contact etching barrier layer and described protective layer film is 1/4 of the wavelength of incident light source.
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is further described.
As shown in Figure 2, the invention provides a kind of structure of cmos image sensor, comprising:
Photodiode area 6, is in bottommost;
Contact etching barrier layer 8, is formed at above photodiode area 6;
Silicide mask 7, is formed at above contact etching barrier layer 8;
At least two dielectric layers 9, are formed at above silicide mask 7;
At least one medium interlayer 10, is formed between dielectric layer 9;
Optical channel deep trouth 12, is obtained by etch media layer 9 and medium interlayer 10;
Protective layer film 11, is formed at the whole product upper surface after deep etching.
As shown in Figure 3, a preferred embodiment, wherein, photodiode area 6 also comprises three kinds of pixel cells, for Wei not red pixel cell 61, green pixel cell 62 and blue pixel cells 63.
As shown in Figure 3, a preferred embodiment, wherein, silicide mask 7 thickness above different photodiode area 6 is different.
A preferred embodiment, wherein, the thickness of the protective layer film 11 after the deep etching above the photodiode area 6 of different colours is identical.
A preferred embodiment, wherein, the thickness on the contact etching barrier layer before the deep etching of the photodiode area 6 of different colours is identical.
As shown in figures 3-8, a kind of preparation method of cmos image sensor, is characterized in that, the method comprises:
As shown in Figure 4, provide photodiode area 13, contact etching barrier layer 15 is set on photodiode area 13;
As shown in Figure 5, deposit a silicide mask 14 in upper end, contact etching barrier layer, wherein, silicide mask 14 controls 1/4 of the wavelength for being greater than incident light source with the gross thickness on contact etching barrier layer 15;
As shown in Figure 6, etched portions silicide mask 14, makes the silicide mask 16 after etching be 1/4 of the wavelength being less than incident light source with the gross thickness on contact etching barrier layer 15;
As shown in Figure 7, in through the silicide mask 16 surface deposition dielectric layer 17 of etching processing and dielectric distance 18, and with silicide mask 16 for stop-layer etch media layer 17 and dielectric distance 18 form optical channel deep trouth 19;
As shown in Figure 8, form protective layer film 19 in the whole product surface deposition after etching processing, wherein silicide mask 16, contact etching barrier layer 15 are 1/4 of the wavelength of incident light source with the gross thickness of protective layer film 20.
Preferably, the generation type of silicide mask 16 is passivation.
Preferably, the control mode of the thickness on contact etching barrier layer 15 is photoetching or etching.
Preferably, the silicide mask 16 above photodiode area 13, contact etching barrier layer 15 are vapour deposition with the gross thickness control mode of protective layer film 20.
Preferably, incident light source wavelength gets the mean value of this light source colour wave-length coverage.
The comparison diagram of the cmos image sensor product of the present invention of the employing according to Fig. 9 compared with prior art sensitivity of green glow can be found out, coverlay thickness is the prior art products that the green glow sensitivity of the cmos image sensor of 760A and repeatable accuracy are better than 260A, wherein, 1/4 green wavelength is approximately 1100A.
In sum, the present invention relates to semiconductor yields and promote field, particularly relate to structure of a kind of cmos image sensor and preparation method thereof, utilize the principle of interference of light, by controlling the method for film thickness in manufacturing process, the loss of reverberation is reduced, and then the intensity of transmitted light is increased, very large help can be produced to raising product yield.
By illustrating and accompanying drawing, giving the exemplary embodiments of the ad hoc structure of embodiment, based on the present invention's spirit, also can do other conversion.Although foregoing invention proposes existing preferred embodiment, but these contents are not as limitation.
For a person skilled in the art, after reading above-mentioned explanation, various changes and modifications undoubtedly will be apparent.Therefore, appending claims should regard the whole change and correction of containing true intention of the present invention and scope as.In Claims scope, the scope of any and all equivalences and content, all should think and still belong to the intent and scope of the invention.
Claims (8)
1. a structure for cmos image sensor, is characterized in that, described structure comprises:
Photodiode area;
Contact etching barrier layer, is formed at above described photodiode area;
Silicide mask, is formed at above described contact etching barrier layer;
At least two dielectric layers, are formed at above described silicide mask;
At least one medium interlayer, is formed between described dielectric layer;
Optical channel deep trouth, by etching described dielectric layer and described medium interlayer obtains;
Protective layer film, is formed at the whole product upper surface after deep etching.
2. the structure of cmos image sensor according to claim 1, is characterized in that, described photodiode area also comprises three kinds of pixel cells, for Wei not red pixel cell, green pixel cell and blue pixel cells.
3. the structure of cmos image sensor according to claim 1, is characterized in that, the thickness of the described protective layer film after the deep etching of the described photodiode area of different colours is identical.
4. the structure of cmos image sensor according to claim 1, is characterized in that, the thickness on the described contact etching barrier layer before the deep etching of the described photodiode area of different colours is identical.
5. a preparation method for cmos image sensor, is characterized in that, described method comprises:
Described photodiode area is provided, described contact etching barrier layer is set on described photodiode area;
Deposit a silicide mask layer in upper end, described contact etching barrier layer, wherein, the gross thickness on silicide mask and described contact etching barrier layer controls 1/4 of the wavelength for being greater than incident light source;
Silicide mask layer described in etched portions, the described silicide mask wherein after etching and the gross thickness on described contact etching barrier layer are 1/4 of the wavelength being less than incident light source;
In dielectric layer described in the described silicide mask layer surface deposition through etching processing, and for stop-layer etches, described dielectric layer forms described optical channel deep trouth with described silicide mask;
Form described protective layer film in the whole product surface deposition after etching processing, the gross thickness of wherein said silicide mask, described contact etching barrier layer and described protective layer film is 1/4 of the wavelength of incident light source.
6. the preparation method of cmos image sensor according to claim 5, is characterized in that, the generation type of described silicide mask is passivation.
7. the preparation method of cmos image sensor according to claim 5, is characterized in that, the control mode of the thickness on described contact etching barrier layer is photoetching or etching.
8. the preparation method of cmos image sensor according to claim 5, is characterized in that, the gross thickness control mode of the described silicide mask on described photodiode area, described contact etching barrier layer and described protective layer film is vapour deposition.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106409854A (en) * | 2016-11-09 | 2017-02-15 | 上海华力微电子有限公司 | Method for improving quantum efficiency of red light of front lighting type CMOS image sensor and structure |
| CN109711229A (en) * | 2017-10-26 | 2019-05-03 | 中芯国际集成电路制造(上海)有限公司 | A kind of fingerprint recognition chip and its manufacturing method and electronic device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100230578A1 (en) * | 2009-03-12 | 2010-09-16 | Sony Corporation | Solid-state image pickup apparatus, method of manufacturing the same, and image pickup apparatus |
| US20140042576A1 (en) * | 2012-08-08 | 2014-02-13 | Canon Kabushiki Kaisha | Photoelectric conversion apparatus |
| US20150194460A1 (en) * | 2014-01-08 | 2015-07-09 | Renesas Electronics Corporation | Manufacturing method of semiconductor device |
-
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100230578A1 (en) * | 2009-03-12 | 2010-09-16 | Sony Corporation | Solid-state image pickup apparatus, method of manufacturing the same, and image pickup apparatus |
| US20140042576A1 (en) * | 2012-08-08 | 2014-02-13 | Canon Kabushiki Kaisha | Photoelectric conversion apparatus |
| US20150194460A1 (en) * | 2014-01-08 | 2015-07-09 | Renesas Electronics Corporation | Manufacturing method of semiconductor device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106409854A (en) * | 2016-11-09 | 2017-02-15 | 上海华力微电子有限公司 | Method for improving quantum efficiency of red light of front lighting type CMOS image sensor and structure |
| CN106409854B (en) * | 2016-11-09 | 2019-12-24 | 上海华力微电子有限公司 | Method and structure for improving red light quantum efficiency of front-illuminated CMOS image sensor |
| CN109711229A (en) * | 2017-10-26 | 2019-05-03 | 中芯国际集成电路制造(上海)有限公司 | A kind of fingerprint recognition chip and its manufacturing method and electronic device |
| CN109711229B (en) * | 2017-10-26 | 2021-12-21 | 中芯国际集成电路制造(上海)有限公司 | Fingerprint identification chip, manufacturing method thereof and electronic device |
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