CN105304473A - Rework technology for improving quality of wafer after etching failure of sapphire wafer graphical substrate - Google Patents
Rework technology for improving quality of wafer after etching failure of sapphire wafer graphical substrate Download PDFInfo
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- CN105304473A CN105304473A CN201510704710.7A CN201510704710A CN105304473A CN 105304473 A CN105304473 A CN 105304473A CN 201510704710 A CN201510704710 A CN 201510704710A CN 105304473 A CN105304473 A CN 105304473A
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- sapphire wafer
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- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 106
- 239000010980 sapphire Substances 0.000 title claims abstract description 106
- 239000000758 substrate Substances 0.000 title claims abstract description 18
- 238000005530 etching Methods 0.000 title abstract description 6
- 238000005498 polishing Methods 0.000 claims abstract description 56
- 238000000034 method Methods 0.000 claims abstract description 27
- 238000004140 cleaning Methods 0.000 claims abstract description 13
- 230000007547 defect Effects 0.000 claims abstract description 7
- 239000000919 ceramic Substances 0.000 claims description 48
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 12
- 239000012530 fluid Substances 0.000 claims description 9
- 239000007788 liquid Substances 0.000 claims description 9
- 239000007787 solid Substances 0.000 claims description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- 235000021110 pickles Nutrition 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 238000005259 measurement Methods 0.000 claims description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 3
- 239000008139 complexing agent Substances 0.000 claims description 3
- 239000004744 fabric Substances 0.000 claims description 3
- 238000007654 immersion Methods 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 235000011149 sulphuric acid Nutrition 0.000 claims description 3
- 239000002352 surface water Substances 0.000 claims description 3
- 238000010257 thawing Methods 0.000 claims description 3
- 230000007812 deficiency Effects 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 83
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000007405 data analysis Methods 0.000 description 1
- 239000010893 paper waste Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present invention relates to a rework technology for improving quality of a wafer after etching failure of a sapphire wafer graphical substrate. The technological process comprises: cleaning, sorting and CMP polishing for removal of defects on the surface of the sapphire wafer. The rework technology for improving quality of a wafer after etching failure of a sapphire wafer graphical substrate has simple operation, and is able to effectively solve the problem of the deficiency in the traditional technology and effectively remove the affected layer of the surface of the sapphire wafer, therefore the quality of the wafer may be greatly improved.
Description
Technical field
The present invention relates to a kind of for sapphire wafer build brilliant before graphical substrate etch the technique of doing over again unsuccessfully.
Background technology
Now for after sapphire wafer graphical substrate etching (PSS) failure, on this type of wafer of process, a kind of method does waste paper process, and another kind of method utilizes traditional glossing to carry out polishing to do over again, for above present situation, there is the aspect of some deficiency following:
1. a control of removal quantity, the defect of wafer surface only need be removed by traditional glossing, and has been in lower thickness limit for this type of wafer, if removal amount is too much, just easily causes wafer partially thin.
2. in traditional technique, after wafer is done over again again, the general thickness of wafer surface can be caused poor, and area thickness difference is deteriorated.
Summary of the invention
The sapphire wafer graphical substrate that technical problem to be solved by this invention is to provide a kind of quality-improving etches technique of doing over again unsuccessfully, this technological operation is simple, effectively can solve problem not enough in traditional handicraft, the effective damage layer removing surface, the quality for wafer improves a lot.
The technical scheme that technical problem of the present invention adopts is:
The sapphire wafer graphical substrate of quality-improving etches a technique of doing over again unsuccessfully, and its technological process is as follows:
One, clean:
(1) graphical substrate is etched the sapphire wafer unsuccessfully and leave standstill immersion 30min in acetone, remove the greasy dirt of Sapphire wafer surface;
(2) cleaning of Sapphire wafer surface photoresist: H2SO4 and H2H2 is mixed with pickle by the mass ratio by 5:1 in descaling bath, pickle is heated to 140 DEG C, sapphire wafer after step one (1) process is placed in descaling bath, soak 5 minutes, rear use pure water rinsing 200 seconds, washes down the acid solution of Sapphire wafer surface;
(3) dry: use drier to be dried by the sapphire wafer after step one (2) cleaning, guarantee that Sapphire wafer surface water stain-free remains;
Two, sorting:
(1) detect: at lower Sapphire wafer surface detected after step one is cleaned such as high lights, first weed out slight crack and the sapphire wafer collapsing limit;
(2) thickness arrangement: the measurement every sheet sapphire wafer being carried out to thickness, sapphire wafer is pressed thickness order arrangement from small to large, often criticize the quantity of sapphire wafer identical with the sheet number of each RUN of polishing machine, often criticize the difference of thickness between sapphire wafer and control within 3um;
Three, Sapphire wafer surface defect is removed in CMP polishing, and described CMP polishing adopts the technique of pasting wax polishing:
(1) be positioned on heating platform by round ceramic dish good for smooth surface flatness, the shiny surface making round ceramic dish, is heated to 90 DEG C upward, and the thickness of ceramic disk is 2 ± 0.5cm, and smooth surface;
(2) employing melting point is the solid state wax of 60 DEG C, and solid state wax is evenly coated in ceramic disk surface, now, solid state wax is melted into sticky wax, is affixed on the sticky wax after thawing by the sapphire wafer after step 2 sorting, needs burnishing surface upward;
(3) ceramic disk posting sapphire wafer is positioned on air bag tablet press machine, puts down air bag cushion, squeeze out sticky wax and bubble between sapphire wafer and ceramic disk on the one hand, on the other hand ceramic disk is cooled, sticky wax is solidified;
(4) ceramic disk is put on polishing machine, and polishing machine adopts uniaxial tension control system, and the lower card of polishing machine is post the smooth lead pan in the surface of polishing cloth, and ceramic disk is positioned over card under polishing machine, post sapphire wafer one faces down, and puts down axle;
(5) carry out polishing, polishing adopts alkalescence polishing liquid, and described alkalescence polishing liquid composition comprises SIO2, KOH, complexing agent, the pH value of alkalescence polishing liquid is 10 ~ 11.5, and polish pressure is 100-200kg, rotating speed is 40-50RPM, and the temperature of lower card is remained on 40-45 DEG C, and polishing time is 100 minutes;
(6) after polishing terminates, ceramic disk is put into tank, post sapphire wafer one faces up, and with the polishing fluid of pure water rinsing Sapphire wafer surface, rear air gun dries up;
(7) will blow off rear ceramic disk is placed on heating platform, by after heating temperatures to 90 DEG C, the sticky wax solidified at the sapphire wafer back side is melted, and takes out sapphire wafer, loads in crystal-boat box;
(8) sapphire wafer of taking-up is put into the rinse bath being furnished with alkaline cleaning fluid, open heating and ultrasonic, remove the sticky wax of sapphire wafer back side remnants, described alkaline cleaning fluid is NaOH solution or KOH solution, and the mass percent of described NaOH or KOH is 2%-5%.
The sapphire wafer graphical substrate of above-mentioned a kind of quality-improving etches technique of doing over again unsuccessfully, wherein, when Sapphire wafer surface defect is removed in described CMP polishing, described sapphire wafer with ceramic disk apart from 1-2cm place, edge for border is counterclockwise to carry out paster, sapphire wafer is symmetrical centered by the center of circle of ceramic disk on ceramic disk, and, described ceramic disk is provided with white space, described white space is with the ceramic disk center of circle for initial point, take 4-6cm as the region of the circle of radius.
Beneficial effect of the present invention is:
Use method of the present invention and conventional method to do over again polishing to sapphire wafer respectively, each to detect data as follows:
Can be drawn by upper table, use method of the present invention to etch unsuccessfully in sapphire wafer graphical substrate and do over again, have employed new glossing, traditional handicraft of comparing, more stable in removal quantity, the risk that wafer is overground can be reduced; In quality, the quality of wafer can be improved, and solve in traditional handicraft, do over again and cause the problem of wafer quality variation.
Embodiment
2 inch sapphire wafer C face graphical substrate of quality-improving etch a technique of doing over again unsuccessfully, and its technological process is as follows:
One, clean:
(1) graphical substrate is etched the 2 inch sapphire C faces standing immersion 30min in acetone that the thickness is unsuccessfully n1, remove the greasy dirt of Sapphire wafer surface;
(2) cleaning of Sapphire wafer surface photoresist: H2SO4 and H2H2 is mixed with pickle by the mass ratio by 5:1 in descaling bath, pickle is heated to 140 DEG C, sapphire wafer after step one (1) process is placed in descaling bath, soak 5 minutes, rear use pure water rinsing 200 seconds, washes down the acid solution of Sapphire wafer surface;
(3) dry: use drier to be dried by the sapphire wafer after step one (2) cleaning, guarantee that Sapphire wafer surface water stain-free remains;
Two, sorting:
(1) detect: at lower Sapphire wafer surface detected after step one is cleaned such as high lights, first weed out slight crack and the sapphire wafer collapsing limit;
(2) thickness arrangement: the measurement every sheet sapphire wafer being carried out to thickness, sapphire wafer is pressed thickness order arrangement from small to large, often criticize the quantity of sapphire wafer identical with the sheet number of each RUN of polishing machine, often criticize the difference of thickness between sapphire wafer and control within 3um;
Three, Sapphire wafer surface defect is removed in CMP polishing, and described CMP polishing adopts the technique of pasting wax polishing:
(1) be positioned on heating platform by round ceramic dish good for smooth surface flatness, the shiny surface making round ceramic dish, is heated to 90 DEG C upward, and the thickness of ceramic disk is 2cm, and smooth surface;
(2) employing melting point is the solid state wax of 60 DEG C, solid state wax is evenly coated in ceramic disk surface, now, solid state wax is melted into sticky wax, sapphire wafer after step 2 sorting is affixed on the sticky wax after thawing, need burnishing surface upward, described sapphire wafer with ceramic disk apart from 1-2cm place, edge for border is counterclockwise to carry out paster, sapphire wafer is symmetrical centered by the center of circle of ceramic disk on ceramic disk, and, described ceramic disk is provided with white space, described white space is for initial point with the ceramic disk center of circle, take 4-6cm as the region of the circle of radius, sapphire wafer is not pasted in white space,
(3) ceramic disk posting sapphire wafer is positioned on air bag tablet press machine, puts down air bag cushion, squeeze out sticky wax and bubble between sapphire wafer and ceramic disk on the one hand, on the other hand ceramic disk is cooled, sticky wax is solidified;
(4) ceramic disk is put on polishing machine, and polishing machine adopts uniaxial tension control system, and the lower card of polishing machine is post the smooth lead pan in the surface of polishing cloth, and ceramic disk is positioned over card under polishing machine, post sapphire wafer one faces down, and puts down axle;
(5) carry out polishing, polishing adopts alkalescence polishing liquid, and described alkalescence polishing liquid composition comprises SIO2, KOH, complexing agent, the pH value of alkalescence polishing liquid is 11, and polish pressure is 150kg, rotating speed is 45r/min, and the temperature of lower card is remained on 42 DEG C, and polishing time is 100 minutes;
(6) after polishing terminates, ceramic disk is put into tank, post sapphire wafer one faces up, and with the polishing fluid of pure water rinsing Sapphire wafer surface, rear air gun dries up;
(7) will blow off rear ceramic disk is placed on heating platform, by after heating temperatures to 90 DEG C, the sticky wax solidified at the sapphire wafer back side is melted, and takes out sapphire wafer, loads in crystal-boat box;
(8) sapphire wafer of taking-up is put into the rinse bath being furnished with alkaline cleaning fluid, open heating and ultrasonic, remove the sticky wax of sapphire wafer back side remnants, now measure the thickness of sapphire wafer is n2, described alkaline cleaning fluid is NaOH solution or KOH solution, and the mass percent of described NaOH or KOH is 2%-5%.
Choosing some thickness n1 is that the graphical substrate of 425-426 μm etches 2 inch sapphire wafers unsuccessfully, detect the general thickness difference Δ n1 of 2 inch sapphire wafers before doing over again, the thickness n2 of 2 inch sapphire wafers after doing over again, area thickness difference Δ n3 within the scope of 2 inch sapphire wafer general thickness difference Δ n2 after doing over again and the 5mmx5mm of 2 inch sapphire wafers after doing over again, testing result is as follows:
| Sequence number | n1（um） | n2(um) | Removal quantity (um) | Δn1 | Δn2 | Δn3 |
| 1 | 425 | 422.4 | 2.6 | 1 | 0.56 | 0.1 |
| 2 | 426 | 423.5 | 2.5 | 2 | 0.8 | 0.2 |
| 3 | 426 | 423.6 | 2.4 | 1 | 0.7 | 0.4 |
| 4 | 427 | 423.9 | 3.1 | 3 | 1.76 | 0.7 |
| 5 | 425 | 422.8 | 2.2 | 2 | 1.18 | 0.8 |
| 6 | 427 | 423.4 | 3.6 | 1 | 0.78 | 0.4 |
| 7 | 426 | 423.8 | 2.2 | 3 | 1.85 | 0.8 |
| 8 | 425 | 422.1 | 2.9 | 2 | 1.19 | 0.6 |
| 9 | 427 | 424.6 | 2.4 | 2 | 1.35 | 0.5 |
| 10 | 426 | 423.1 | 2.9 | 3 | 2.19 | 0.9 |
| 11 | 427 | 424.7 | 2.3 | 3 | 2.38 | 1 |
| 12 | 426 | 422.8 | 3.2 | 2 | 1.53 | 0.7 |
Wherein, the method of measurement of sapphire wafer thickness difference is: any three points getting the sapphire wafer in measuring range, measurement obtains three one-tenth-value thickness 1/10s N1, N2, N3, deduct minimum value by maximum in three one-tenth-value thickness 1/10s N1, N2, N3, sapphire wafer general thickness difference Δ n1/ Δ n2/ Δ n3 can be obtained.
Drawn to draw a conclusion by above data analysis:
1. removal quantity is more stable: normally for the wafer doing graphical substrate etching, the surface etching degree of depth is about 1.8um, so only need the removal amount of 2-3um just effectively can remove the damage layer on surface.
2. effective raising of quality: adopt this technique thickness difference overall for surface can be reduced by 1-1.5um, area thickness difference can effectively control within 1um, and the quality for wafer improves a lot.
Here description of the invention and application is illustrative, not wants by scope restriction of the present invention in the above-described embodiments, and therefore, the present invention is not by the restriction of the present embodiment, and the technical scheme that any employing equivalence replacement obtains is all in the scope of protection of the invention.
Claims (2)
1. the sapphire wafer graphical substrate of quality-improving etches a technique of doing over again unsuccessfully, and it is characterized by, its technological process is as follows:
One, clean:
(1) graphical substrate is etched the sapphire wafer unsuccessfully and leave standstill immersion 30min in acetone, remove the greasy dirt of Sapphire wafer surface;
(2) cleaning of Sapphire wafer surface photoresist: H2SO4 and H2H2 is mixed with pickle by the mass ratio by 5:1 in descaling bath, pickle is heated to 140 DEG C, sapphire wafer after step one (1) process is placed in descaling bath, soak 5 minutes, rear use pure water rinsing 200 seconds, washes down the acid solution of Sapphire wafer surface;
(3) dry: use drier to be dried by the sapphire wafer after step one (2) cleaning, guarantee that Sapphire wafer surface water stain-free remains;
Two, sorting:
(1) detect: at lower Sapphire wafer surface detected after step one is cleaned such as high lights, first weed out slight crack and the sapphire wafer collapsing limit;
(2) thickness arrangement: the measurement every sheet sapphire wafer being carried out to thickness, sapphire wafer is pressed thickness order arrangement from small to large, often criticize the quantity of sapphire wafer identical with the sheet number of each RUN of polishing machine, often criticize the difference of thickness between sapphire wafer and control within 3um;
Three, Sapphire wafer surface defect is removed in CMP polishing, and described CMP polishing adopts the technique of pasting wax polishing:
(1) be positioned on heating platform by round ceramic dish good for smooth surface flatness, the shiny surface making round ceramic dish, is heated to 90 DEG C upward, and the thickness of ceramic disk is 2 ± 0.5cm;
(2) employing melting point is the solid state wax of 60 DEG C, and solid state wax is evenly coated in ceramic disk surface, now, solid state wax is melted into sticky wax, is affixed on the sticky wax after thawing by the sapphire wafer after step 2 sorting, needs burnishing surface upward;
(3) ceramic disk posting sapphire wafer is positioned on air bag tablet press machine, puts down air bag cushion, squeeze out sticky wax and bubble between sapphire wafer and ceramic disk on the one hand, on the other hand ceramic disk is cooled, sticky wax is solidified;
(4) ceramic disk is put on polishing machine, and polishing machine adopts uniaxial tension control system, and the lower card of polishing machine is post the smooth lead pan in the surface of polishing cloth, and ceramic disk is positioned over card under polishing machine, post sapphire wafer one faces down, and puts down axle;
(5) carry out polishing, polishing adopts alkalescence polishing liquid, and described alkalescence polishing liquid composition comprises SIO2, KOH, complexing agent, the pH value of alkalescence polishing liquid is 10 ~ 11.5, and polish pressure is 100-200kg, rotating speed is 40-50RPM, and the temperature of lower card is remained on 40-45 DEG C, and polishing time is 100 minutes;
(6) after polishing terminates, ceramic disk is put into tank, post sapphire wafer one faces up, and with the polishing fluid of pure water rinsing Sapphire wafer surface, rear air gun dries up;
(7) will blow off rear ceramic disk is placed on heating platform, by after heating temperatures to 90 DEG C, the sticky wax solidified at the sapphire wafer back side is melted, and takes out sapphire wafer, loads in crystal-boat box;
(8) sapphire wafer of taking-up is put into the rinse bath being furnished with alkaline cleaning fluid, open heating and ultrasonic, remove the sticky wax of sapphire wafer back side remnants, described alkaline cleaning fluid is NaOH solution or KOH solution, and the mass percent of described NaOH or KOH is 2%-5%.
2. the sapphire wafer graphical substrate of a kind of quality-improving as claimed in claim 1 etches technique of doing over again unsuccessfully, it is characterized by, when Sapphire wafer surface defect is removed in described CMP polishing, described sapphire wafer with ceramic disk apart from 1-2cm place, edge for border is counterclockwise to carry out paster, sapphire wafer is symmetrical centered by the center of circle of ceramic disk on ceramic disk, and, described ceramic disk is provided with white space, described white space is with the ceramic disk center of circle for initial point, take 4-6cm as the region of the circle of radius.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510704710.7A CN105304473A (en) | 2015-10-27 | 2015-10-27 | Rework technology for improving quality of wafer after etching failure of sapphire wafer graphical substrate |
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| CN201510704710.7A CN105304473A (en) | 2015-10-27 | 2015-10-27 | Rework technology for improving quality of wafer after etching failure of sapphire wafer graphical substrate |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109290918A (en) * | 2018-11-13 | 2019-02-01 | 江苏利泷半导体科技有限公司 | Full automatic polishing production line for amorphous sheet processing procedure |
| CN109290917A (en) * | 2018-11-13 | 2019-02-01 | 江苏利泷半导体科技有限公司 | Full-automatic amorphous processing procedure polishing system |
| CN105931949B (en) * | 2016-06-20 | 2019-02-19 | 黄山博蓝特半导体科技有限公司 | A kind of one chip cleaning method of graphical sapphire substrate rework wafers |
| CN114695643A (en) * | 2022-06-02 | 2022-07-01 | 天通控股股份有限公司 | Reworking method for poor back of lithium niobate single-side polished wafer |
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| US20120040595A1 (en) * | 2010-08-13 | 2012-02-16 | Phuong Van Nguyen | Silicon Carbide, Sapphire, Germanium, Silicon and Pattern Wafer Polishing Templates Holder |
| CN103213061A (en) * | 2012-01-18 | 2013-07-24 | 张卫兴 | Processing technic of sapphire substrate slice special for patterned substrate |
| TW201340173A (en) * | 2012-03-22 | 2013-10-01 | Wafer Works Optronics Corp | Method for reclaiming patterned sapphire substrate |
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2015
- 2015-10-27 CN CN201510704710.7A patent/CN105304473A/en active Pending
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| CN1858137A (en) * | 2006-05-31 | 2006-11-08 | 河北工业大学 | Sapphire lining material polishing liquid and its preparing method |
| CN101399164A (en) * | 2007-09-26 | 2009-04-01 | 北京有色金属研究总院 | Semi-insulation gallium arsenide wafer double face finishing method |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105931949B (en) * | 2016-06-20 | 2019-02-19 | 黄山博蓝特半导体科技有限公司 | A kind of one chip cleaning method of graphical sapphire substrate rework wafers |
| CN109290918A (en) * | 2018-11-13 | 2019-02-01 | 江苏利泷半导体科技有限公司 | Full automatic polishing production line for amorphous sheet processing procedure |
| CN109290917A (en) * | 2018-11-13 | 2019-02-01 | 江苏利泷半导体科技有限公司 | Full-automatic amorphous processing procedure polishing system |
| CN114695643A (en) * | 2022-06-02 | 2022-07-01 | 天通控股股份有限公司 | Reworking method for poor back of lithium niobate single-side polished wafer |
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