CN105282464A - Curved surface stacked-type image sensor - Google Patents
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- CN105282464A CN105282464A CN201510837395.5A CN201510837395A CN105282464A CN 105282464 A CN105282464 A CN 105282464A CN 201510837395 A CN201510837395 A CN 201510837395A CN 105282464 A CN105282464 A CN 105282464A
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Abstract
The invention discloses a curved surface stacked-type image sensor, wherein a thin flexible stacked-type image sensor main body is adopted and a seal pipe with an inner curved surface is combined; a lower silicon sheet is bonded with the inner curved surface, so as to make the bottom of the lower silicon sheet bent into corresponding arc degree with the inner curved surface, thereby reducing the volume of the whole stacked-type image sensor; in addition, a piece of light-transmitting glass is used to seal a top portion; the piece of the light-transmitting glass and the top portion of an upper silicon sheet are provided with empty cavities; each empty cavity is filled with inert air; a side wall of each empty cavity is provided with a micro through hole; in the ground environment, the inert air can protect the clearness of the stacked-type image sensor main body; when the outside atmospheric pressure changes, the inert air inside each empty cavity can be exhausted from the micro through hole to the outside or the outside air can enter each empty cavity from the micro through hole, thereby the air pressure inside each empty cavity and the outside air pressure are identical or mostly the same; and no matter in the ground environment or the space environment, the problem that the curved surface stacked-type image sensor explodes or the curved surface stacked-type image sensor is squished can be prevented.
Description
Technical field
The present invention relates to technical field of semiconductors, be specifically related to a kind of curved surface stack imageing sensor.
Background technology
Imageing sensor is the important component part of composition digital camera.According to the difference of element, CCD (ChargeCoupledDevice, charge coupled cell) and the large class of CMOS (ComplementaryMetal-OxideSemiconductor, metal oxide semiconductor device) two can be divided into.Cmos sensor obtain a prerequisite of extensive use be its higher sensitivity had, compared with short exposure time and the Pixel Dimensions that day by day reduces.
In order to realize higher integrated level, a present new technology is arisen at the historic moment, i.e. stack imageing sensor, common stack imageing sensor is made up of upper and lower two parts, and top is divided into BSI silicon chip, and bottom is divided into traditional silicon sheet.High integrated stack imageing sensor can reduce the volume of imageing sensor.
Deep space probing has become the direction that World Science field is made great efforts, and sounding detection can find out the unknown world, promotes the development of human society science and technology, the more important thing is and can find celestial body that the is similar and earth, migrate bring possibility for mankind's celestial body.Deep space probing needs the pattern recording various object in scanned space at the satellite of detection walking, and this will use image sensor technologies with regard to indispensable.Due to the restriction that satellite sends, volume and the quality of the imageing sensor on satellite are the smaller the better, and therefore, above-mentioned high integrated stack type imageing sensor is expected to be applied in deep space probing.But the environment of space is different from the earth, and space is in high vacuum state, will there is explosion or explosion issues in the above-mentioned stack imageing sensor be in space, cause stack imageing sensor cannot be applied in space.
Summary of the invention
In order to overcome above problem, the invention provides a kind of stack imageing sensor, adopt curved-surface structure and there is the encapsulating structure of air-gap, reduce the volume of stack imageing sensor, and make stack imageing sensor can be good at adapting to air pressure change between space and ground.
To achieve these goals, the invention provides a kind of curved surface stack imageing sensor, comprise stack imageing sensor main body and encapsulating package; Wherein,
Described stack imageing sensor main body comprises:
Upper silicon chip, through reduction processing bottom it, has photosensitive sensor pel array and upper extraction polar region; Described photosensitive sensor pel array is used for detection image signal;
Lower silicon slice, through reduction processing bottom it, has reading circuit and output interface circuit, the lower extraction polar region of the picture signal that photosensitive sensor pel array detects; The bottom of described upper silicon chip and the upper surface of described lower silicon slice are bonded together;
Upper extraction polar region is connected by the first binding line with lower extraction polar region;
The solder joint that described encapsulating package comprises negative camber, is positioned at the contact pad of negative camber both sides and is positioned at bottom encapsulating package; There is on encapsulating package top the transparent glass closed by encapsulating package; Fit bottom described negative camber and described lower silicon slice, make described lower silicon slice bottom bend become the radian with described negative camber same curvature radius; The described contact pad of described encapsulating package is connected by the second binding line with described lower extraction polar region; Have cavity above described stack imageing sensor main body, be full of inert gas in described cavity, the sidewall of described cavity has micro through hole.
Preferably, described stack imageing sensor main body has flexibility, and its thickness is 5 ~ 40 μm.
Preferably, the solder joint bottom described encapsulating package adopts spherical gold goal solder joint, and described gold goal solder joint is connected with external system.
Preferably, the sidewall of cavity has the structure able to turn on or off on micro through hole and micro through hole; During normality, micro through hole is closed by structure able to turn on or off, and like this, the inert gas in micro through hole cannot flow out to outside; When ambient pressure is lower than air pressure in cavity, the pressure that structure both sides able to turn on or off are subject to is different and outwards washed open by the inert gas in cavity, and like this, structure able to turn on or off opens micro through hole, inert gas in cavity flows out to outside, thus makes the air pressure in cavity identical with ambient pressure or close; When ambient pressure is higher than air pressure in cavity, the pressure that structure both sides able to turn on or off are subject to is different and inwardly washed open by ambient atmos, and like this, structure able to turn on or off opens micro through hole, and ambient atmos flows in cavity.
Preferably, described encapsulating package is ceramic CBGA encapsulating package, and the difference of the thermal coefficient of expansion of the thermal coefficient of expansion of described transparent glass and the ceramic material of described ceramic CBGA encapsulating package is in (-1 ~ 1) scope.
Preferably, described lower silicon slice specifically comprises: the reading circuit of signal that photosensitive sensor pel array is detected with output interface circuit, be used for providing supplementary module and phase-locked loop that the voltage/current of power supply is relevant, at described lower silicon slice edge, there is lower extraction polar region; The described reading circuit of described lower silicon slice comprises with output interface circuit: row sampling/retainer, row selector, gain sampler, digital to analog converter, analog to digital converter, shift register, imageing sensor processor, high speed interface, row/column controller, voxel model switch, gain amplifier, digital-to-analogue selector, timing sequencer, system logic controller, control register group and the I2C interface be connected with control register group;
Described system logic controller is for controlling the unlatching of described reading circuit and output interface circuit; Sample/retainer, described analog to digital converter, described row/column controller, described voxel model switch, described gain amplifier and described digital-to-analogue selector of described system logic controller and described timing sequencer, described row is connected, respectively for controlling their keying;
Described timing sequencer is connected respectively with described/retainer of sampling, described analog to digital converter, described row/column controller, described voxel model switch, described gain amplifier and the described digital-to-analogue selector of arranging, for arranging the order of occurrence of described row sampling/retainer, described modulus selector, described row/column controller, described voxel model switch and described gain amplifier;
Described row/column controller samples with described row selector, described row/and retainer is connected, and described row/column controller controls described row sampling/retainer and selects a row pixel to be read, a row pixel in the described row pixel of described row selector selection;
Described gain sampler has multiple and connects one to one with the row in described photosensitive sensor pel array, for gathering the numerical data of a row pixel in a selected row pixel described to be read and sending to digital to analog converter;
Described digital to analog converter is connected with described gain sampler, the digital data conversion that described gain sampler sends is model data and sends to described gain sampler by described digital to analog converter, and the model data that described digital to analog converter sends is sent to analog to digital converter by described gain sampler;
Described analog to digital converter has multiple and connects one to one with described gain sampler, and the model data for being sent by described gain sampler is carried out analog-to-digital conversion and obtained numerical data, and sends numerical data to described imageing sensor processor;
Described imageing sensor processor is connected with described analog to digital converter, the described numerical data that multiple described analog to digital converter sends is processed, and the data after process is transferred out by described high speed interface;
Described shift register is connected with described photosensitive sensor pel array, after the row in described photosensitive sensor pel array have read, move one;
Described voxel model switch is connected with described photosensitive sensor pel array, for changing the exposure mode of described photosensitive sensor pel array;
Described gain amplifier is connected with described gain sampler, for arranging the yield value of described gain sampler;
Described digital-to-analogue selector is connected with described imageing sensor processor, for the mode selecting described imageing sensor processor data to be exported.
Preferably, described high speed interface is binary channels parallel data grabbing card.
Preferably, each passage in described binary channels is that 12 bit parallel data export.
Preferably, described high speed interface is Hexamermis spp serial data interface.
Preferably, described Hexamermis spp comprises: four high speed data transmission interface passages, a high-speed data clock interface passage, and a high-speed data control interface passage.
Curved surface stack imageing sensor of the present invention, by arranging mutually stacking upper silicon chip and lower silicon slice, and carry out reduction processing to bottom upper silicon chip and bottom lower silicon slice, thus form the stack imageing sensor main body of very thin thickness, because stack imageing sensor main body is very thin, therefore it has flexible characteristic, namely flexible, combine the package tube with negative camber again, negative camber and stack imageing sensor bottom part body fit, thus make stack imageing sensor bottom part body formed the radian identical with negative camber and with good the fitting together of negative camber, and above package tube, adopt transparent glass to encapsulate, cavity is formed between transparent glass and stack imageing sensor main body, inert gas is full of in cavity, the sidewall of package tube has micro through hole, micro through hole is used for the discharge of the inert gas in cavity or ambient atmos enters cavity from micro through hole, thus remain that the air pressure of package tube inside is identical with ambient pressure, particularly in vacuum environment, inert gas in cavity is discharged to the external world from micro through hole, thus make package tube inside also become vacuum state, avoid stack imageing sensor that explosion or explosion issues occur in space, it also avoid the problem be crowded flat when stack imageing sensor returns to ground from space.In addition, in ground environment, inert gas can remain potted the cleanliness factor of the inside of pipe, avoids the pollution to stack imageing sensor.
Accompanying drawing explanation
Fig. 1 is the cross section structure schematic diagram of the curved surface stack imageing sensor of a preferred embodiment of the present invention
Fig. 2 is the plan structure schematic diagram of the curved surface stack imageing sensor of a preferred embodiment of the present invention
Fig. 3 is the cross section structure schematic diagram of the stack imageing sensor main body of a preferred embodiment of the present invention
Fig. 4 is the plan structure schematic diagram of the upper silicon chip in the stack imageing sensor main body of a preferred embodiment of the present invention
Fig. 5 is the annexation schematic diagram of each device in the stack imageing sensor main body of a preferred embodiment of the present invention
Fig. 6 is the data transfer mode schematic diagram in the stack imageing sensor main body of a preferred embodiment of the present invention
Embodiment
For making content of the present invention clearly understandable, below in conjunction with Figure of description, content of the present invention is described further.Certain the present invention is not limited to this specific embodiment, and the general replacement known by those skilled in the art is also encompassed in protection scope of the present invention.
Curved surface stack imageing sensor of the present invention, adopt very thin stack imageing sensor main body, very thin stack imageing sensor main body has flexibility, can flexural deformation, and combine the package tube with negative camber, lower silicon slice and negative camber are well fit together, make to bend to radian identical with it accordingly along with negative camber bottom the lower silicon slice of stack imageing sensor main body, thus reduce the volume of whole stack imageing sensor, and, transparent glass is adopted to carry out top encapsulation, transparent glass and upper silicon chip top have cavity, inert gas is full of in cavity, cavity sidewalls has micro through hole, in ground environment, inert gas can protect the cleanliness factor of stack imageing sensor main body, when external atmosphere pressure changes, inert gas in cavity can be discharged to the outside from micro through hole or the gas in the external world can enter in cavity from micro through hole, thus air pressure in maintenance cavity is identical with ambient pressure or close, no matter curved surface stack imageing sensor can be avoided to blast or crowded flat problem at ground environment or at space environment.
Below in conjunction with accompanying drawing 1-4 and specific embodiment, the present invention is described in further detail.It should be noted that, accompanying drawing all adopt simplify very much form, use non-ratio accurately, and only in order to object that is convenient, that clearly reach aid illustration the present embodiment.
Refer to Fig. 1, in the present embodiment, curved surface stack imageing sensor, comprises stack imageing sensor main body 00 and encapsulating package 03; Wherein,
Stack imageing sensor main body 00 comprises:
Upper silicon chip 01, has photosensitive sensor pel array and upper extraction polar region; Photosensitive sensor pel array is used for detection image signal; Stack imageing sensor main body has flexibility, and the thickness of bottom after reduction processing is 5 ~ 40 μm, preferably, is 10 μm;
Lower silicon slice 02, through reduction processing bottom it, has reading circuit and output interface circuit, the lower extraction polar region of the picture signal that photosensitive sensor pel array detects; The bottom of upper silicon chip 01 and the upper surface of lower silicon slice 02 are bonded together, and in Fig. 1,011 and 022 is bonding region;
Upper extraction polar region is connected by the first binding line (upper heavy line) with lower extraction polar region;
Encapsulating package 03 comprises negative camber 032, be positioned at the contact pad 031 of negative camber 032 both sides, be positioned at solder joint 033 bottom encapsulating package 03; There is on encapsulating package 03 top the transparent glass 034 closed by whole encapsulating package; Fit bottom negative camber 032 and lower silicon slice 03, make lower silicon slice 03 bottom bend become the radian with negative camber 032 same curvature radius; The contact pad 031 of encapsulating package 03 is connected by the second binding line (lower heavy line) with lower extraction polar region; Above stack imageing sensor main body 00, there is cavity 04, inert gas is full of in cavity 04, the sidewall of cavity 04 has the structure able to turn on or off 036 on micro through hole 035 and micro through hole 035, during normality, when that is to say that air pressure in cavity 04 is identical with ambient pressure or close, micro through hole 035 is closed by structure 036 able to turn on or off, and like this, the inert gas in micro through hole 035 cannot flow out to outside; When ambient pressure is lower than air pressure in cavity 04, the pressure that structure 036 both sides able to turn on or off are subject to is different and outwards washed open by the inert gas in cavity 04, like this, structure 036 able to turn on or off opens micro through hole 035, inert gas in cavity 04 flows out to outside, thus makes the air pressure in cavity 04 identical with ambient pressure or close; When ambient pressure is higher than air pressure in cavity 04, the pressure that structure 036 both sides able to turn on or off are subject to is different and inwardly washed open by ambient atmos, and like this, structure 036 able to turn on or off opens micro through hole 035, and ambient atmos flows in cavity 04.Structure 036 able to turn on or off can be positioned at the outer end of micro through hole 035, also can be arranged in micro through hole 035; In Fig. 1, structure 036 able to turn on or off can be high temperature resistant elastomeric material or metal material, and one end of structure 036 able to turn on or off is fixedly connected on a sidewall of micro through hole 035, and the other end is movably connected on another sidewall of micro through hole 035; In the present embodiment, solder joint 033 bottom encapsulating package 03 adopts spherical gold goal solder joint, gold goal solder joint is connected with external system, the height of gold goal solder joint is 180 ~ 300 μm, and encapsulating package 03 is ceramic CBGA encapsulating package, the thermal coefficient of expansion of transparent glass 04 and the similar thermal expansion coefficient or identical of the ceramic material of ceramic CBGA encapsulating package, preferably, the difference of the two is in (-1 ~ 1) scope, and such as, the two is all about 7.Transparent glass 04 is 200 μm with the distance at upper silicon chip 01 top, and the thickness of transparent glass 04 is 300 μm, and bottom encapsulating package 03, thickness is 300 μm.
Referring to Fig. 2, is upper extraction polar region E around the effective pixel region P of the photosensitive sensor pel array in upper silicon chip, is the sidewall of encapsulating package 03 around upper extraction polar region E, and top side wall is encapsulation screw K.In the present embodiment, effective pixel region P is 25 × 25mm, and the border of effective pixel region P is 0.4mm to the distance of the side wall inner surfaces of encapsulating package 03, and the sidewall thickness of encapsulating package 03 is 0.6mm, and screwed hole K is 0.4mm.
Refer to Fig. 3, the following specifically describes the stack imageing sensor main body of the present embodiment, the stack imageing sensor main body of the present embodiment is CMOS image sensor structure, and it comprises:
Upper silicon chip 1, has the photosensitive sensor pel array for detection image signal and the upper extraction polar region being positioned at upper silicon chip 1 edge, here photosensitive sensor pel array is the sensor cover battle array of ultralow photosensitivity, each photosensitive sensor pixel comprises the light sensitive diode 103 being arranged in silicon chip 1 and the mid portion being positioned at the interconnection layer 104 above light sensitive diode 103, interconnection layer 104 comprises interconnection line M1, M2, M3 and M4, and lay respectively at interconnection line M1, M2, groove in M3 and M4, groove is used for printing opacity, upper extraction polar region comprises and is arranged in silicon chip 1 and polysilicon 101 outside light sensitive diode 103, be positioned at the marginal portion of the interconnection layer 104 on polysilicon 101, interconnection layer comprises interconnection line M1, M2 and M3, lay respectively at interconnection line M1, contact hole bottom M2 and M3, and be positioned at the upper contact block 102 at interconnection line M3 top, contact hole is surrounded by space, for the isolation of contact hole, in the present embodiment, refer to Fig. 4, upper contact block 102 is positioned at the edge surrounding of silicon chip 1, and centre is photosensitive sensor pel array P, the valid pixel of inductive pick-up pel array P is the 8T overall situation pel array of 1800 × 2000, the surrounding of valid pixel is pixel functional areas, upper contact block 102 is positioned at pixel functional areas, and pixel functional areas also comprise: dark pixel and dummy pixel district (dummy) and simplify reading circuit district.The photosensitive sensor array of upper silicon chip 1 realized according to FSI technique in the past, and complete colorized optical filtering mirror and lenticule.
Lower silicon slice 2, its edge has lower extraction polar region; Lower extraction pole district is positioned at lower silicon slice 2 edge, lower extraction polar region comprise be arranged in lower silicon slice 2 polysilicon 201, be positioned at interconnection layer 204 marginal portion above polysilicon 201, the contact hole that the marginal portion of interconnection layer 204 comprises interconnection line M1, M2 and M3 and lays respectively at bottom interconnection line M1, M2 and M3, contact hole is surrounded by space and is used for isolation; Be positioned at the lower contact block 202 at interconnection line M3 top; Lower silicon slice 2 region between lower extraction polar region is provided with reading circuit with output interface circuit, for providing the supplementary module and phase-locked loop that the voltage/current of power supply is relevant, these circuit have been prepared with CMOS technology respectively, as the polysilicon 203 in Fig. 3, be positioned at interconnection layer 204 mid portion above polysilicon 203, the contact hole that interconnection layer 204 comprises interconnection line M1, M2 and M3 and lays respectively at bottom interconnection line M1, M2 and M3, these contact holes are surrounded by space and are used for isolation.
Be connected with binding line (heavy line) between upper contact block 102 and lower contact block 202, thus the light sensitive diode 103 of upper silicon chip 1 is connected with the circuit of lower silicon slice 2.
In the present embodiment, refer to Fig. 5, the reading circuit of lower silicon slice and output interface circuit are reading circuit and the output interface circuit of high accuracy super low-power consumption, it comprises: row sampling/retainer columnsample/hold301, row selector rowselector302, gain sampler CDSPGA303, digital to analog converter DAC304, analog to digital converter ADC305, shift register shiftregister306, imageing sensor processor imagesensorprocessor307, high speed interface LVDSinterface308, row/column controller row/columnctrl309, voxel model switch CISmodeswitcher310, gain amplifier gaincontroller311, digital-to-analogue selector digitalmodeselector312, timing sequencer timinggenerator313, system logic controller systemcontrollogic314, control register group controlregisterbank315 and the I2C interface I2Cinterface316 be connected with control register group, in Fig. 3, also comprise in lower silicon slice for providing the supplementary module and other supplementary module V/Ireferenceanalogsupportetc.317 that the voltage/current of power supply is relevant, and phase-locked loop PLL318.
Wherein, refer to Fig. 5, system logic controller 314 is for controlling the unlatching of reading circuit and output interface circuit; System logic controller 314 and timing sequencer 313, arrange sample/retainer 301, analog to digital converter 304, row/column controller 309, voxel model switch 310, gain amplifier 311 and digital-to-analogue selector 312 and be connected respectively, for controlling their keying; In the present embodiment, system logic controller 314 performs corresponding action for flashing light, battery saving mode, reset routine respectively, perform for flashing light and open reading circuit and output interface circuit, close described reading circuit and output interface circuit for battery saving mode, open reading circuit and output interface circuit for reset routine.
Timing sequencer 313 and sample/retainer 301, analog to digital converter 305, row/column controller 309, voxel model switch 310, gain amplifier 311 and digital-to-analogue selector 312 of row are connected respectively, for arranging the order of occurrence arranging sampling/retainer 301, row/column controller 309, voxel model switch 310, gain amplifier 311 and analog to digital converter 305; And when the image of stack imageing sensor exports complete, send and feed back signal to system logic controller 314;
Row/column controller 309 and row selector 302, arrange sample/retainer 301 is connected, row/column controller 309 controls row sampling/retainer 301 and selects a row pixel to be read, and row selector 302 selects a row pixel in a row pixel to be read;
Gain sampler 311 has multiple and connects one to one with the row in photosensitive sensor pel array CISpixel, for gathering the numerical data of a row pixel in a row pixel to be read and sending to digital to analog converter 304; Here, have the pixel of 1800 × 2000 arrays in photosensitive sensor pel array CISpixel, pixel behavior 1800 row, then gain sampler and pixel column are 1800 correspondingly;
Digital to analog converter 304 is connected with gain sampler 303, for providing reference model to gain sampler 303; The digital data conversion that gain sampler 303 sends by digital to analog converter 304 is model data and sends to gain sampler 311, and the model data that digital to analog converter 304 sends is sent to analog to digital converter by gain sampler 311
Analog to digital converter 305 has multiple and connects one to one with gain sampler 303, and the model data for being sent by gain sampler 303 is carried out analog-to-digital conversion and obtained numerical data, and sends numerical data to imageing sensor processor 307; Here, gain sampler 311 be 1800 with the row one_to_one corresponding in photosensitive sensor pel array CISpixel, so analog to digital converter 305 and gain sampler 311 are also 1800 correspondingly.
Imageing sensor processor 307 is connected with analog to digital converter 305, the numerical data that multiple analog to digital converter 305 sends is processed, and the data after process is transferred out by high speed interface 308;
Shift register 306 is connected with photosensitive sensor pel array CISpixel, after the row in photosensitive sensor pel array CISpixel have read, move one;
Voxel model switch 310 is connected with photosensitive sensor pel array CISpixel, for changing the exposure mode of photosensitive sensor pel array CISpixel;
Gain amplifier 311 is connected with gain sampler 311, for arranging the yield value of each gain sampler 311;
Digital-to-analogue selector 312 is connected with imageing sensor processor 307, for the mode selecting imageing sensor processor 307 data to be exported; In the present embodiment, the mode that imageing sensor processor 307 exports data comprises parallel output or Serial output, and digital-to-analogue selector 312 can be selected to be parallel output mode, and also can select is serial output mode;
Refer to Fig. 4, in the present embodiment, the data flow schematic diagram high speed interface 308 of stack imageing sensor can be Hexamermis spp serial data interface, Hexamermis spp channel1 ~ channel6 comprises: four high speed data transmission interface passage LVDSDriverchannel1 ~ 4, a high-speed data clock interface passage LLVDSCLKchannel5, and a high-speed data control interface passage LVDSCTRLchannel6, data laterally export (arrow of horizontal direction).In other embodiments of the invention, high speed interface is binary channels parallel data grabbing card, and each passage in binary channels is that 12 bit parallel data export, data longitudinal output (the thick arrow of vertical direction).
Although the present invention discloses as above with preferred embodiment; right described embodiment is citing for convenience of explanation only; and be not used to limit the present invention; those skilled in the art can do some changes and retouching without departing from the spirit and scope of the present invention, and the protection range that the present invention advocates should be as the criterion with described in claims.
Claims (10)
1. a curved surface stack imageing sensor, is characterized in that, comprises stack imageing sensor main body and encapsulating package; Wherein,
Described stack imageing sensor main body comprises:
Upper silicon chip, through reduction processing bottom it, has photosensitive sensor pel array and upper extraction polar region; Described photosensitive sensor pel array is used for detection image signal;
Lower silicon slice, through reduction processing bottom it, has the reading circuit of the picture signal that described photosensitive sensor pel array detects and output interface circuit and lower extraction polar region; The bottom of described upper silicon chip and the upper surface of described lower silicon slice are bonded together;
Upper extraction polar region is connected by the first binding line with lower extraction polar region;
The solder joint that described encapsulating package comprises negative camber, is positioned at the contact pad of negative camber both sides and is positioned at bottom encapsulating package; There is on encapsulating package top the transparent glass closed by described encapsulating package; Fit bottom described negative camber and described lower silicon slice, make described lower silicon slice bottom bend become the radian with described negative camber same curvature radius; The described contact pad of described encapsulating package is connected by the second binding line with described lower extraction polar region; Have cavity above described stack imageing sensor main body, be full of inert gas in described cavity, the sidewall of described cavity has micro through hole.
2. curved surface stack imageing sensor according to claim 1, is characterized in that, described stack imageing sensor main body has flexibility, and its thickness is 5 ~ 40 μm.
3. curved surface stack imageing sensor according to claim 1, is characterized in that, the solder joint bottom described encapsulating package adopts spherical gold goal solder joint, and described gold goal solder joint is connected with external system.
4. curved surface stack imageing sensor according to claim 1, is characterized in that, the sidewall of cavity has the structure able to turn on or off on micro through hole and micro through hole; During normality, micro through hole is closed by structure able to turn on or off, and like this, the inert gas in micro through hole cannot flow out to outside; When ambient pressure is lower than air pressure in cavity, the pressure that structure both sides able to turn on or off are subject to is different and outwards washed open by the inert gas in cavity, and like this, structure able to turn on or off opens micro through hole, inert gas in cavity flows out to outside, thus makes the air pressure in cavity identical with ambient pressure or close; When ambient pressure is higher than air pressure in cavity, the pressure that structure both sides able to turn on or off are subject to is different and inwardly washed open by ambient atmos, and like this, structure able to turn on or off opens micro through hole, and ambient atmos flows in cavity.
5. curved surface stack imageing sensor according to claim 1, it is characterized in that, described encapsulating package is ceramic CBGA encapsulating package, and the difference of the thermal coefficient of expansion of the thermal coefficient of expansion of described transparent glass and the ceramic material of described ceramic CBGA encapsulating package is in (-1 ~ 1) scope.
6. the curved surface stack imageing sensor according to claim 1-5 any one, it is characterized in that, described lower silicon slice specifically comprises: the reading circuit of signal that photosensitive sensor pel array is detected with output interface circuit, be used for providing supplementary module and phase-locked loop that the voltage/current of power supply is relevant, at described lower silicon slice edge, there is lower extraction polar region; The described reading circuit of described lower silicon slice comprises with output interface circuit: row sampling/retainer, row selector, gain sampler, digital to analog converter, analog to digital converter, shift register, imageing sensor processor, high speed interface, row/column controller, voxel model switch, gain amplifier, digital-to-analogue selector, timing sequencer, system logic controller, control register group and the I2C interface be connected with control register group;
Described system logic controller is for controlling the unlatching of described reading circuit and output interface circuit; Sample/retainer, described analog to digital converter, described row/column controller, described voxel model switch, described gain amplifier and described digital-to-analogue selector of described system logic controller and described timing sequencer, described row is connected, respectively for controlling their keying;
Described timing sequencer is connected respectively with described/retainer of sampling, described analog to digital converter, described row/column controller, described voxel model switch, described gain amplifier and the described digital-to-analogue selector of arranging, for arranging the order of occurrence of described row sampling/retainer, described modulus selector, described row/column controller, described voxel model switch and described gain amplifier;
Described row/column controller samples with described row selector, described row/and retainer is connected, and described row/column controller controls described row sampling/retainer and selects a row pixel to be read, a row pixel in the described row pixel of described row selector selection;
Described gain sampler has multiple and connects one to one with the row in described photosensitive sensor pel array, for gathering the numerical data of a row pixel in a selected row pixel described to be read and sending to digital to analog converter;
Described digital to analog converter is connected with described gain sampler, the digital data conversion that described gain sampler sends is model data and sends to described gain sampler by described digital to analog converter, and the model data that described digital to analog converter sends is sent to analog to digital converter by described gain sampler;
Described analog to digital converter has multiple and connects one to one with described gain sampler, and the model data for being sent by described gain sampler is carried out analog-to-digital conversion and obtained numerical data, and sends numerical data to described imageing sensor processor;
Described imageing sensor processor is connected with described analog to digital converter, the described numerical data that multiple described analog to digital converter sends is processed, and the data after process is transferred out by described high speed interface;
Described shift register is connected with described photosensitive sensor pel array, after the row in described photosensitive sensor pel array have read, move one;
Described voxel model switch is connected with described photosensitive sensor pel array, for changing the exposure mode of described photosensitive sensor pel array;
Described gain amplifier is connected with described gain sampler, for arranging the yield value of described gain sampler;
Described digital-to-analogue selector is connected with described imageing sensor processor, for the mode selecting described imageing sensor processor data to be exported.
7. curved surface stack imageing sensor according to claim 6, is characterized in that, described high speed interface is binary channels parallel data grabbing card.
8. stack imageing sensor according to claim 7, is characterized in that, each passage in described binary channels is that 12 bit parallel data export.
9. stack imageing sensor according to claim 6, is characterized in that, described high speed interface is Hexamermis spp serial data interface.
10. stack imageing sensor according to claim 9, is characterized in that, described Hexamermis spp comprises: four high speed data transmission interface passages, a high-speed data clock interface passage, and a high-speed data control interface passage.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108200366A (en) * | 2017-02-03 | 2018-06-22 | 思特威电子科技（美国）有限公司 | Pixel unit and the formation method of pixel unit and digital camera imaging system |
| CN109923858A (en) * | 2019-01-31 | 2019-06-21 | 深圳市汇顶科技股份有限公司 | Imaging sensor and its manufacturing method and electronic equipment |
| US10529754B2 (en) | 2017-08-29 | 2020-01-07 | Samsung Electronics Co., Ltd. | Omnidirectional image sensor and manufacturing method thereof |
| CN110679164A (en) * | 2017-03-31 | 2020-01-10 | 岑美实验室有限公司 | Stackable communication device for sensor information processing and delivery |
| WO2020063121A1 (en) * | 2018-09-26 | 2020-04-02 | 上海集成电路研发中心有限公司 | Stacked image sensor pixel structure and preparation method |
| CN116469901A (en) * | 2023-04-28 | 2023-07-21 | 江苏普达迪泰科技有限公司 | Image sensor structure and image sensor |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060208289A1 (en) * | 2005-03-17 | 2006-09-21 | Fujitsu Limited | MOS image sensor |
| CN103066096A (en) * | 2013-01-28 | 2013-04-24 | 豪威科技(上海)有限公司 | Manufacturing method of back lighting type CMOS (Complementary Metal Oxide Semiconductor) image sensor |
| US20140024912A1 (en) * | 2012-07-18 | 2014-01-23 | Neurotopia, Inc. | Neurophysiological Dry Sensor |
| CN104517986A (en) * | 2013-09-12 | 2015-04-15 | 株式会社东芝 | Solid state imaging device and method for manufacturing the same |
| CN104919271A (en) * | 2013-01-15 | 2015-09-16 | 东洋橡胶工业株式会社 | Sensor and method for producing same |
-
2015
- 2015-11-26 CN CN201510837395.5A patent/CN105282464B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060208289A1 (en) * | 2005-03-17 | 2006-09-21 | Fujitsu Limited | MOS image sensor |
| US20140024912A1 (en) * | 2012-07-18 | 2014-01-23 | Neurotopia, Inc. | Neurophysiological Dry Sensor |
| CN104919271A (en) * | 2013-01-15 | 2015-09-16 | 东洋橡胶工业株式会社 | Sensor and method for producing same |
| CN103066096A (en) * | 2013-01-28 | 2013-04-24 | 豪威科技(上海)有限公司 | Manufacturing method of back lighting type CMOS (Complementary Metal Oxide Semiconductor) image sensor |
| CN104517986A (en) * | 2013-09-12 | 2015-04-15 | 株式会社东芝 | Solid state imaging device and method for manufacturing the same |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108200366A (en) * | 2017-02-03 | 2018-06-22 | 思特威电子科技（美国）有限公司 | Pixel unit and the formation method of pixel unit and digital camera imaging system |
| CN108200366B (en) * | 2017-02-03 | 2020-08-11 | 思特威(上海)电子科技有限公司 | Pixel unit, method for forming pixel unit and digital camera imaging system |
| CN110679164A (en) * | 2017-03-31 | 2020-01-10 | 岑美实验室有限公司 | Stackable communication device for sensor information processing and delivery |
| US10529754B2 (en) | 2017-08-29 | 2020-01-07 | Samsung Electronics Co., Ltd. | Omnidirectional image sensor and manufacturing method thereof |
| WO2020063121A1 (en) * | 2018-09-26 | 2020-04-02 | 上海集成电路研发中心有限公司 | Stacked image sensor pixel structure and preparation method |
| CN109923858A (en) * | 2019-01-31 | 2019-06-21 | 深圳市汇顶科技股份有限公司 | Imaging sensor and its manufacturing method and electronic equipment |
| WO2020155067A1 (en) * | 2019-01-31 | 2020-08-06 | 深圳市汇顶科技股份有限公司 | Image sensor and manufacture method therefor and electronic device |
| US11374048B2 (en) | 2019-01-31 | 2022-06-28 | Shenzhen GOODIX Technology Co., Ltd. | Image sensor, manufacturing method thereof and electronic device |
| CN116469901A (en) * | 2023-04-28 | 2023-07-21 | 江苏普达迪泰科技有限公司 | Image sensor structure and image sensor |
| CN116469901B (en) * | 2023-04-28 | 2023-10-20 | 江苏普达迪泰科技有限公司 | Image sensor structure and image sensor |
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