CN103066096A - Manufacturing method of back lighting type CMOS (Complementary Metal Oxide Semiconductor) image sensor - Google Patents
Manufacturing method of back lighting type CMOS (Complementary Metal Oxide Semiconductor) image sensor Download PDFInfo
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Abstract
The invention provides a manufacturing method of a back lighting type CMOS (Complementary Metal Oxide Semiconductor) image sensor. The manufacturing method comprises the following steps of supplying a wafer bonding structure, wherein the wafer bonding structure comprises a logic wafer and a pixel wafer which are bonded together; forming a groove in the wafer bonding structure; carrying out smoothing treatment on an opening of the groove; and filling the groove by utilizing a plating process to form a contact hole. According to the manufacturing method of the back lighting type CMOS image sensor, which is provided by the invention, the smoothing treatment is carried out on the opening of the groove, the opening of the groove becomes smooth, namely the angle of the opening of the groove is reduced, and the growth speed of a plating layer positioned on the opening of the groove can be reduced, so that the phenomenon of extremely early sealing of the groove is prevented, a cavity is prevented from being formed in the contact hole, and the reliability of the contact hole is enhanced.
Description
Technical field
The present invention relates to the image sensor technical field, particularly a kind of manufacture method of back-illuminated type CMOS image sensor.
Background technology
Image sensor grows up on the photoelectric technology basis, and so-called image sensor can be experienced exactly optical image information and convert thereof into the transducer of usable output signal.Image sensor can improve the visual range of human eye, the microcosmos and the macrocosm that make people see that naked eyes can't be seen, see that people temporarily can't arrival place occurrence, see the various physics, the chemical change process that exceed the naked eyes visual range, the carcinogenesis of human of life, physiology, pathology, etc.The visible image transducer plays very important effect in people's culture, physical culture, production, life and scientific research.Can say that modern humans's activity can't have been left image sensor.
Image sensor can be divided into charge coupled device (Charge-Coupled Device) image sensor (that is being commonly called as the CCD image sensor) and CMOS(Complementary Metal Oxide Semiconductor according to its principle that adopts) image sensor, wherein the CMOS image sensor is namely made based on CMOS (Complementary Metal Oxide Semiconductor) (CMOS) technology.Because the CMOS image sensor is to adopt traditional cmos circuit technique to make, therefore can with image sensor with and needed peripheral circuit integrated, thereby so that the CMOS image sensor has wider application prospect.
Difference according to the position that receives light, the CMOS image sensor can be divided into front according to formula CMOS image sensor and back-illuminated type CMOS image sensor, wherein, back-illuminated type CMOS image sensor is compared according to formula CMOS image sensor with front, maximum optimization part is exactly with the structural change of element internal, be about to the element input path reverses its direction of photosensitive layer, light can be entered from back side direct projection, avoided shining in the formula CMOS image sensor structure front, light can be subject to structure between lenticule and the photodiode and the impact of thickness, has improved the usefulness that light receives.
In the manufacture method of traditional back-illuminated type CMOS image sensor, logic region (logic area) and pixel region (pixel area) are integrated on the same wafer, form device wafers (device wafer); With described device wafers and a slide glass (carrier wafer) bonding, described device wafers is carried out the back side process, form back-illuminated type CMOS image sensor.In the manufacture method of this traditional back-illuminated type CMOS image sensor, because logic region and pixel region are integrated on the same wafer, simultaneously different (degree of depth such as STI is different for the many technological requirement of logic region and pixel region, needed STI technique difference etc.), therefore can cause complex process and uppity problem.
For this reason, prior art has proposed again a kind of manufacture method of back-illuminated type CMOS image sensor, in the method, logic region is integrated on the wafer, forms the logic wafer; Pixel region is integrated on another wafer, forms the pixel wafer; With logic wafer and pixel wafer bonding, and with described logic wafer and pixel wafer interconnect, form back-illuminated type CMOS image sensor.Utilize the manufacture method of this rear a kind of back-illuminated type CMOS image sensor to form back-illuminated type CMOS image sensor, can access the many advantages such as chip is little, cost is low, sensor mass is high.But, in the manufacture method of this rear a kind of back-illuminated type CMOS image sensor, to need the very large contact hole of depth-to-width ratio interconnect described logic wafer and pixel wafer, wherein, the depth-to-width ratio of the required contact hole of the manufacture method of rear a kind of back-illuminated type CMOS image sensor (usually tens to the order of magnitude) before the depth-to-width ratio order of magnitude of several ratios one (usually) of the required contact hole of a kind of manufacture method of back-illuminated type CMOS image sensor much bigger.
Please refer to Fig. 1, it is the comparison diagram of schematic construction of the formed back-illuminated type CMOS of the manufacture method image sensor of the schematic construction of the formed back-illuminated type CMOS of manufacture method image sensor of the first back-illuminated type CMOS image sensor in the prior art and the second back-illuminated type CMOS image sensor.As shown in Figure 1, wherein, the structure A of Fig. 1 left part is the schematic construction of the formed back-illuminated type CMOS of the manufacture method image sensor of the first back-illuminated type CMOS image sensor; The structure B of Fig. 1 right side part is the schematic construction of the formed back-illuminated type CMOS of the manufacture method image sensor of the second back-illuminated type CMOS image sensor.Manufacture method for the second back-illuminated type CMOS image sensor, required contact hole needs interconnect logic zone and pixel region, also namely need interconnect logic wafer and pixel wafer, as can be seen from Figure 1, the depth-to-width ratio of required contact hole will be very large, than the depth-to-width ratio (the required contact hole of manufacture method of the first back-illuminated type CMOS image sensor) of existing contact hole with much bigger.
The method that forms described contact hole in the prior art comprises: form groove, described groove connects logic wafer and pixel wafer; Utilize electroplating technology to fill described groove, form contact hole.When forming the large contact hole of depth-to-width ratio by the method, formed contact hole inside will produce empty (void).Concrete, please refer to Fig. 2, it is for utilizing transmission electron microscope (TEM) figure of the formed contact hole of electroplating technology in the prior art.As shown in Figure 2, the contact hole that utilizes existing method to form has cavity 1, and described cavity will reduce the reliability (reliability) of back-illuminated type CMOS image sensor.Therefore, in the manufacture process of back-illuminated type CMOS image sensor, how to avoid the cavity in the contact hole to produce a technical problem that has become this area to need to be resolved hurrily.
Summary of the invention
The object of the present invention is to provide a kind of manufacture method of back-illuminated type CMOS image sensor, in the manufacture process that solves existing back-illuminated type CMOS image sensor, have the problem in cavity in the formed contact hole.
For solving the problems of the technologies described above, the invention provides a kind of manufacture method of back-illuminated type CMOS image sensor, the manufacture method of described back-illuminated type CMOS image sensor comprises:
The wafer bonding structure is provided, and described wafer bonding structure comprises logic wafer and the pixel wafer that is bonded together;
In described wafer bonding structure, form groove;
The opening of described groove is carried out round and smooth processing;
Utilize electroplating technology to fill described groove, form contact hole.
Optionally, in the manufacture method of described back-illuminated type CMOS image sensor, the every side of opening after the described round and smooth processing has an arc-shaped corners.
Optionally, in the manufacture method of described back-illuminated type CMOS image sensor, the every side of opening after the described round and smooth processing has a plurality of pointed turnings.
Optionally, in the manufacture method of described back-illuminated type CMOS image sensor, the cross-sectional width of the opening after the described round and smooth processing is 1.2 times ~ 3 times of cross-sectional width of original opening.
Optionally, in the manufacture method of described back-illuminated type CMOS image sensor, the opening of described groove is carried out round and smooth processing comprise: utilize plasma process to bombard the opening of described groove.
Optionally, in the manufacture method of described back-illuminated type CMOS image sensor, the opening that utilizes plasma process to bombard described groove comprises: utilize the plasma process of inert gas to bombard the opening of described groove.
Optionally, in the manufacture method of described back-illuminated type CMOS image sensor, utilize the plasma process of inert gas to bombard in the technique of opening of described groove, gas flow is 30sccm ~ 200sccm.
Optionally, in the manufacture method of described back-illuminated type CMOS image sensor, utilize the plasma process of inert gas to bombard in the technique of opening of described groove, radio-frequency power is 500W ~ 1500W.
Optionally, in the manufacture method of described back-illuminated type CMOS image sensor, the opening that utilizes the plasma process of inert gas to bombard described groove comprises:
Utilize the plasma process of argon gas to bombard the opening of described groove, wherein, gas flow is 100sccm, and radio-frequency power is 800W.
The inventor finds that it is larger that electroplating technology has angle, the characteristic that the electrodeposited coating speed of growth is faster.Therefore, in existing technique, in the speed of growth of the opening part electrodeposited coating of the groove inside faster than described groove, so very easily cause groove to seal too early, thereby cause having in the formed contact hole problem in cavity.And in the manufacture method of back-illuminated type CMOS image sensor provided by the invention, the opening of described groove is carried out round and smooth processing, so that the opening of described groove becomes round and smooth, namely so that the opening angle of described groove diminish, can reduce thus the speed of growth of the opening part electrodeposited coating of groove, thereby prevent the too early phenomenon of sealing of groove, avoided forming the cavity in the contact hole, improved the reliability of contact hole.
Description of drawings
Fig. 1 is the comparison diagram of schematic construction of the formed back-illuminated type CMOS of the manufacture method image sensor of the schematic construction of the formed back-illuminated type CMOS of manufacture method image sensor of the first back-illuminated type CMOS image sensor in the prior art and the second back-illuminated type CMOS image sensor;
Fig. 2 is transmission electron microscope (TEM) figure that utilizes the formed contact hole of electroplating technology in the prior art;
Fig. 3 utilizes electroplating technology to form the process schematic diagram of contact hole in the prior art;
Fig. 4 is the schematic flow sheet of manufacture method of the back-illuminated type CMOS image sensor of the embodiment of the invention;
Fig. 5 a ~ 5d is the formed device profile schematic diagram of manufacture method of the back-illuminated type CMOS image sensor of the embodiment of the invention;
Fig. 6 is the transmission electron microscope figure of the resulting contact hole of manufacture method of the back-illuminated type CMOS image sensor of the embodiment of the invention.
Embodiment
Be described in further detail below in conjunction with the manufacture method of the drawings and specific embodiments to the back-illuminated type CMOS image sensor of the present invention's proposition.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that accompanying drawing all adopts very the form of simplifying and all uses non-accurately ratio, only in order to convenient, the purpose of the aid illustration embodiment of the invention lucidly.
The inventor finds that it is larger that electroplating technology has angle, the characteristic that the electrodeposited coating speed of growth is faster.And for groove, the angle of its opening part is maximum, therefore, in existing technique, in the speed of growth of the opening part electrodeposited coating of the groove inside faster than described groove, so very easily cause groove to seal too early, thereby cause having in the formed contact hole problem in cavity.Concrete, please refer to Fig. 3, it is for utilizing electroplating technology to form the process schematic diagram of contact hole in the prior art.As shown in Figure 3, in the prior art, utilizing electroplating technology to form in the process of contact hole, the speed of growth of groove opening place electrodeposited coating is faster than the inside of groove, whole groove structure is again the basically identical rectangular-shaped structure of cross-sectional width simultaneously, therefore, in the final contact hole that forms, will have cavity 1, thereby cause the reliability decrease of contact hole.
For this reason, the present application people has proposed following technical scheme, and is concrete, please refer to Fig. 4, and it is the schematic flow sheet of manufacture method of the back-illuminated type CMOS image sensor of the embodiment of the invention.As shown in Figure 4, the manufacture method of described back-illuminated type CMOS image sensor comprises:
S40: the wafer bonding structure is provided, and described wafer bonding structure comprises logic wafer and the pixel wafer that is bonded together;
S41: in described wafer bonding structure, form groove;
S42: the opening of described groove is carried out round and smooth processing;
S43: utilize electroplating technology to fill described groove, form contact hole.
Concrete, please refer to Fig. 5 a ~ 5d, it is the formed device profile schematic diagram of manufacture method of the back-illuminated type CMOS image sensor of the embodiment of the invention.
Shown in Fig. 5 a, wafer bonding structure 50 is provided, described wafer bonding structure 50 comprises logic wafer 51 and the pixel wafer 52 that is bonded together.Wherein, be integrated with logic region on the described logic wafer 51, be integrated with pixel region on the described pixel wafer 52.Described logic wafer 51(comprises logic region), pixel wafer 52(comprises pixel region) and this bonding between the two be prior art, the application repeats no more this.
Then, shown in Fig. 5 b, in described wafer bonding structure 50, form groove 53.Wherein, described groove 53 connects described logic wafer 51 and pixel wafer 52.Concrete, can carry out etching technics to described wafer bonding structure 50, such as dry etch process, wet-etching technology etc., thus in described wafer bonding structure 50, form groove 53.By this process, described groove 53 is the basically identical rectangular-shaped structures of a cross-sectional width.
Then, shown in Fig. 5 c-1, the opening of described groove 53 is carried out round and smooth processing, form the groove 53 ' with round and smooth opening.In the present embodiment, the every side of opening after the processing has an arc-shaped corners 500, thus, that opening after the described processing will become will be round and smooth, its angle will diminish, thereby reduce the speed of growth of opening part electrodeposited coating, namely can dwindle electrodeposited coating in the opening part of groove 53 ' and inner speed of growth difference, thereby prevent the too early phenomenon of sealing of groove, avoid forming in the contact hole cavity.
In other embodiments of the invention (shown in Fig. 5 c-2), also can be so that the every side of opening after processing has a plurality of pointed turnings 500 ', thus, that opening after the described processing will become equally will be round and smooth, its angle will diminish, thereby will reduce the speed of growth of opening part electrodeposited coating, namely can dwindle electrodeposited coating in the opening part of groove and inner speed of growth difference, prevent the too early phenomenon of sealing of groove, avoid forming in the contact hole cavity.
In addition, after the opening of described groove 53 was carried out round and smooth processing, formed groove 53 ' not only had round and smooth opening, and it is large that the cross-sectional width of this opening also will become.The cross-sectional width of the opening after the processing can be 1.2 times ~ 3 times of cross-sectional width of original opening.Thus, even in the face of in the speed of growth of the opening part electrodeposited coating of groove 53 ' still faster than the situation of the inside of groove 53 ', the space of electrodeposited coating becomes large because the opening part of groove 53 ' can be used for growing, thereby also can prevent the too early phenomenon of sealing of groove 53 ', avoid forming the cavity in the contact hole, improved the reliability of contact hole.
Concrete, the technique of the opening of described groove 53 being carried out round and smooth processing realizes by plasma process, namely utilizes plasma process to bombard described groove 53(Fig. 5 b) opening, thereby obtain the groove 53 ' with round and smooth opening shown in Fig. 5 c.Preferably, utilize the plasma process of inert gas to bombard described groove 53(Fig. 5 b) opening.Wherein, the concrete technology condition can adopt: gas flow is 30sccm ~ 200sccm, for example 30sccm, 50sccm, 70sccm, 100sccm, 120sccm, 150sccm, 170sccm, 200sccm; Radio-frequency power is 500W ~ 1500W, for example 500W, 550W, 600W, 700W, 750W, 800W, 900W, 1000W, 1100W, 1200W, 1300W, 1400W, 1500W.Because the stable performance of inert gas is difficult for reacting with other materials, therefore utilizes the plasma process of inert gas to bombard described groove 53(Fig. 5 b) opening, can access the groove 53 ' with round and smooth opening of material/stable performance.
In the present embodiment, specifically utilize the plasma process of argon gas to bombard the opening of described groove, wherein, gas flow is 100sccm, and radio-frequency power is 800W.At this, consider that the use of argon gas is comparatively frequent in the existing technique, cost is also relatively cheap, therefore adopts the plasma process of argon gas to bombard the opening of described groove; Further, be 100sccm selecting gas flow, radio-frequency power is in the situation of 800W, can utilize fully described reacting gas, namely can either prevent the waste of reacting gas, can avoid the deficiency of reacting gas again, thereby improve process efficiency, reduction process costs, simultaneously, under such gas flow and radio-frequency power, can access the very round and smooth opening of shape, improved the quality of the back-illuminated type CMOS image sensor of follow-up formation.
At the groove 53 ' that has obtained having round and smooth opening afterwards, then, shown in Fig. 5 d, utilize electroplating technology to fill described groove 53 ', form contact hole 54.At this, because opening round and smooth (angle is little) and the cross-sectional width of described groove 53 ' are larger, therefore through after the electroplating technology, can access the higher contact hole of reliability 54, concrete, avoided forming in the contact hole cavity.In the present embodiment, the material that utilizes electroplating technology to fill described groove 53 ' is metallic copper, and metallic copper has good electrical conductive performance, the contact hole 54 that utilizes metallic copper to form can be good at interconnecting described logic wafer 51 and pixel wafer 52.In other embodiments of the invention, also can use other metal materials to fill described groove 53 ', such as silver, tungsten etc.
Further, please refer to Fig. 6, it is the transmission electron microscope figure of the resulting contact hole of manufacture method of the back-illuminated type CMOS image sensor of the embodiment of the invention.As shown in Figure 6, utilize the resulting contact hole reliability height of manufacture method of the back-illuminated type CMOS image sensor of the embodiment of the invention, special, avoided forming in the contact hole cavity.To this, can be further with reference to figure 2, it is for utilizing the transmission electron microscope figure of the formed contact hole of electroplating technology in the prior art.Comparison diagram 6 and Fig. 2 can further show the high advantage of the resulting contact hole reliability of manufacture method of the back-illuminated type CMOS image sensor that utilizes the embodiment of the invention.
In summary, in the manufacture method of back-illuminated type CMOS image sensor provided by the invention, the opening of described groove is carried out round and smooth processing, so that the opening of described groove becomes round and smooth, namely so that the opening angle of described groove diminishes, can reduce thus the speed of growth of the opening part electrodeposited coating of groove, thereby prevent the too early phenomenon of sealing of groove, avoided forming the cavity in the contact hole, improved the reliability of contact hole.
Foregoing description only is the description to preferred embodiment of the present invention, is not any restriction to the scope of the invention, and any change, modification that the those of ordinary skill in field of the present invention is done according to above-mentioned disclosure all belong to the protection range of claims.
Claims (9)
1. the manufacture method of a back-illuminated type CMOS image sensor is characterized in that, comprising:
The wafer bonding structure is provided, and described wafer bonding structure comprises logic wafer and the pixel wafer that is bonded together;
In described wafer bonding structure, form groove;
The opening of described groove is carried out round and smooth processing;
Utilize electroplating technology to fill described groove, form contact hole.
2. the manufacture method of back-illuminated type CMOS image sensor as claimed in claim 1 is characterized in that, the every side of opening after the described round and smooth processing has an arc-shaped corners.
3. the manufacture method of back-illuminated type CMOS image sensor as claimed in claim 1 is characterized in that, the every side of opening after the described round and smooth processing has a plurality of pointed turnings.
4. the manufacture method of back-illuminated type CMOS image sensor as claimed in claim 1 is characterized in that, the cross-sectional width of the opening after the described round and smooth processing is 1.2 times ~ 3 times of cross-sectional width of original opening.
5. such as the manufacture method of each the described back-illuminated type CMOS image sensor in the claim 1 to 4, it is characterized in that, the opening of described groove is carried out round and smooth processing comprise: utilize plasma process to bombard the opening of described groove.
6. the manufacture method of back-illuminated type CMOS image sensor as claimed in claim 5 is characterized in that, the opening that utilizes plasma process to bombard described groove comprises: utilize the plasma process of inert gas to bombard the opening of described groove.
7. the manufacture method of back-illuminated type CMOS image sensor as claimed in claim 6 is characterized in that, utilizes the plasma process of inert gas to bombard in the technique of opening of described groove, and gas flow is 30sccm ~ 200sccm.
8. the manufacture method of back-illuminated type CMOS image sensor as claimed in claim 6 is characterized in that, utilizes the plasma process of inert gas to bombard in the technique of opening of described groove, and radio-frequency power is 500W ~ 1500W.
9. the manufacture method of back-illuminated type CMOS image sensor as claimed in claim 6 is characterized in that, the opening that utilizes the plasma process of inert gas to bombard described groove comprises:
Utilize the plasma process of argon gas to bombard the opening of described groove, wherein, gas flow is 100sccm, and radio-frequency power is 800W.
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| CN105282464A (en) * | 2015-11-26 | 2016-01-27 | 上海集成电路研发中心有限公司 | Curved surface stacked-type image sensor |
| CN108257998A (en) * | 2018-01-23 | 2018-07-06 | 豪威科技(上海)有限公司 | CMOS image sensor and its manufacturing method |
| CN109461749A (en) * | 2018-11-09 | 2019-03-12 | 德淮半导体有限公司 | Stack TSV structure and its manufacturing method |
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