CN105281680A - Low-noise amplifier with switch and radio-frequency signal amplification method - Google Patents
Low-noise amplifier with switch and radio-frequency signal amplification method Download PDFInfo
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- CN105281680A CN105281680A CN201510681044.XA CN201510681044A CN105281680A CN 105281680 A CN105281680 A CN 105281680A CN 201510681044 A CN201510681044 A CN 201510681044A CN 105281680 A CN105281680 A CN 105281680A
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Abstract
The invention relates to a low-noise amplifier with a switch and a radio-frequency signal amplification method. The low-noise amplifier comprises a gain-stage circuit, an amplification selection switching circuit and a load circuit, wherein the gain-stage circuit comprises amplifiers, the number of which is the same to that of radio-frequency signals to be amplified; the amplifiers and the radio-frequency signals are in one-to-one correspondence, such that each radio-frequency signal can be independently amplified; the amplification selection switching circuit is connected with the gain-stage circuit and can select the amplifiers in the gain-stage circuit according to the radio-frequency signals to be amplified, such that the amplifiers selected and determined in the gain-stage circuit can amplify the radio-frequency signals; the load circuit is used for receiving radio-frequency output signals amplified through the gain-stage circuit; and a radio-frequency signal amplification output end for outputting the radio-frequency output signals amplified through the gain-stage circuit is formed. The low-noise amplifier disclosed by the invention is compact in structure; simultaneously, radio-frequency switching and low-noise amplifying capabilities can be realized; the occupation area is reduced; the parasitic influence is reduced; and the low-noise amplifier is wide in application range, safe and reliable.
Description
Technical field
The present invention relates to a kind of low noise amplifier and method for amplifying RF signal, especially a kind of low noise amplifier with switch and method for amplifying RF signal, belong to the technical field of low noise amplifier.
Background technology
In wireless or mobile communication system, radio-frequency (RF) switch (RFSwitch) usually can be adopted to carry out radio-frequency channel selection.In the module such as WiFi, bluetooth, such as use radio-frequency (RF) switch to select transmitting and receiving passage; Radio-frequency (RF) switch is used to carry out the control of Multiband-multimode in mobile communications.Radio-frequency (RF) switch plays the part of more and more important role in the radio-frequency front-end design of mobile radio terminal equipment.Low noise amplifier is the requisite device of radio-frequency front-end, and for amplifying the weak radio-frequency signal received by antenna, post-amplifier is delivered in its output or frequency mixer carries out amplifying or frequency-conversion processing.
In prior art, radio-frequency (RF) switch and low noise amplifier are two modules of separating, and area occupied is many, and parasitic effects is large.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, a kind of low noise amplifier with switch and method for amplifying RF signal are provided, its compact conformation, realize the ability of radio-frequency (RF) switch and low noise amplification simultaneously, reduce area occupied, reduce parasitic effects, wide accommodation, safe and reliable.
According to technical scheme provided by the invention, the described low noise amplifier with switch, comprises
Gain stage circuit, comprises the amplifier consistent with radiofrequency signal quantity to be amplified, and described amplifier and radiofrequency signal one_to_one corresponding carry out independent amplification with Neng Duimei road radiofrequency signal;
Amplify selected on-off circuit, be connected with gain stage circuit, the amplifier in gain stage circuit can be selected according to radiofrequency signal to be amplified, can amplify described radiofrequency signal to make the amplifier selecting in described gain stage circuit to determine;
Load circuit, for receiving the radio frequency output signal after gain stage circuit is amplified, and forms the radiofrequency signal amplification output exported by the radio frequency output signal after amplifying through gain stage circuit.
Described gain stage circuit is also connected with the coupling circuit for ground connection.
The output of described gain stage circuit is connected with load circuit by driving stage circuit, and described radiofrequency signal amplifies the junction that output is formed at driving stage circuit and load circuit.
Described amplifier comprises gain transistor, during described gain transistor employing metal-oxide-semiconductor, radiofrequency signal is loaded into the gate terminal of gain transistor, and the gate terminal of gain transistor is also connected with amplification selected on-off circuit, and the drain electrode end of gain transistor is connected with load circuit.
Described amplification selected on-off circuit comprises the amplification selection circuit consistent with amplifier quantity in gain stage circuit, described amplification selection circuit comprises the mains switch that one end is connected with bias voltage Vbias, the other end of described mains switch connects by selecting the resistor amplifier corresponding with earthed switch and gain stage circuit, the other end ground connection of earthed switch.
Described load circuit comprises load inductance, load capacitance, load resistance, Ba Lun or transistor.
Described coupling circuit comprises coupling inductance, and described coupling inductance comprises on-chip inductor, base plate for packaging inductance, discrete device inductance or bondwire inductance.
Described at least one driving transistors of driving stage circuit.
Described gain stage circuit is used for the input of received RF signal and radiofrequency signal and amplifies and to be provided with for alleviating between output that radiofrequency signal amplitude is excessive causes the bypass circuit exporting distortion, described bypass circuit comprises the bypass branch consistent with radiofrequency signal quantity to be amplified, and described bypass branch is with amplification selected on-off circuit, gain stage circuit is corresponding connects;
Bypass branch comprises bypass selector switch, and one end of described bypass selector switch is connected with amplification selected on-off circuit and gain stage circuit, and the other end of bypass selector switch amplifies output by coupling partition capacitor with radiofrequency signal and is connected.
Described gain stage circuit is also connected with the coupling circuit for ground connection, described coupling circuit comprises coupling inductance, the quantity of described coupling inductance is one or consistent with the quantity of gain transistor in gain stage circuit, and the source terminal of described gain transistor is by coupling inductance ground connection.
Described utilization is with the amplification method of the low noise amplifier radio frequency signal of switch, gain stage circuit is utilized to receive radiofrequency signal to be amplified, the amplifier consistent with radiofrequency signal quantity to be amplified is comprised in described gain stage circuit, described amplifier and radiofrequency signal one_to_one corresponding, carry out independent amplification with Neng Duimei road radiofrequency signal;
The amplification selected on-off circuit that utilization is connected with gain stage circuit selects the amplifier in gain stage circuit according to radiofrequency signal to be amplified, can amplify to make the amplifier selecting in described gain stage circuit to determine to described radiofrequency signal;
Radio frequency output signal after amplifying gain stage circuit, the radiofrequency signal utilizing load circuit to be formed is amplified output and is exported.
Described amplification selected on-off circuit is selected to determine that the quantity of amplifier is less than or equal to the amplifier quantity comprised in gain stage circuit.
Described gain stage circuit is also connected with the coupling circuit for ground connection.
The output of described gain stage circuit is connected with load circuit by driving stage circuit, and described radiofrequency signal amplifies the junction that output is formed at driving stage circuit and load circuit.
Described gain stage circuit is used for the input of received RF signal and radiofrequency signal and amplifies and to be provided with for alleviating between output that radiofrequency signal amplitude is excessive causes the bypass circuit exporting distortion, described bypass circuit comprises the bypass branch consistent with radiofrequency signal quantity to be amplified, and described bypass branch is with amplification selected on-off circuit, gain stage circuit is corresponding connects;
Bypass branch comprises bypass selector switch, and one end of described bypass selector switch is connected with amplification selected on-off circuit and gain stage circuit, and the other end of bypass selector switch amplifies output by coupling partition capacitor with radiofrequency signal and is connected.
Advantage of the present invention: the amplifier consistent with radiofrequency signal quantity to be amplified is set in gain stage circuit, amplify in selected on-off circuit and the amplification selection circuit consistent with amplifier quantity is set, amplify selection circuit can select to determine corresponding amplifier according to radiofrequency signal to be amplified, realize the amplification of radio frequency signal, after driving stage drives, amplify output by radiofrequency signal export radio frequency output signal, compact conformation, realize the ability of radio-frequency (RF) switch and low noise amplification simultaneously, reduce area occupied, reduce parasitic effects, wide accommodation, safe and reliable.
Accompanying drawing explanation
Fig. 1 is using state block diagram of the present invention.
Fig. 2 is the circuit theory schematic diagram that the present invention forms the first low noise amplifier.
Fig. 3 is the circuit theory schematic diagram that the present invention forms the second low noise amplifier.
Fig. 4 is the circuit theory schematic diagram that the present invention forms the 3rd low noise amplifier.
Fig. 5 is the circuit theory schematic diagram that the present invention forms the 4th low noise amplifier.
Fig. 6 is the circuit theory schematic diagram that the present invention forms the 5th low noise amplifier.
Fig. 7 is the circuit theory schematic diagram that the present invention forms the 6th low noise amplifier.
Fig. 8 is the circuit theory schematic diagram that the present invention forms the 7th low noise amplifier.
Embodiment
Below in conjunction with concrete drawings and Examples, the invention will be further described.
In order to realize the ability of radio-frequency (RF) switch and low noise amplification simultaneously, reduce area occupied, reduce parasitic effects, the present invention includes
Gain stage circuit 16, comprises the amplifier consistent with radiofrequency signal quantity to be amplified, and described amplifier and radiofrequency signal one_to_one corresponding carry out independent amplification with Neng Duimei road radiofrequency signal;
Amplify selected on-off circuit 8, be connected with gain stage circuit 16, the amplifier in gain stage circuit can be selected according to radiofrequency signal to be amplified, to make to select the amplifier determined can amplify described radiofrequency signal in described gain stage circuit 16;
Load circuit 24, for receiving the radio frequency output signal after gain stage circuit 16 is amplified, and forms the radiofrequency signal exported by the radio frequency output signal after amplifying through gain stage circuit 16 and amplifies output.
Particularly, radiofrequency signal to be amplified is received by gain stage circuit 16, radiofrequency signal to be amplified is generally ac small signal, and radiofrequency signal to be amplified is one or more, and in gain stage circuit 16, amplifier can carry out independent amplification to the radiofrequency signal of each correspondence.During concrete enforcement, the quantity of radiofrequency signal to be amplified is generally less than and equals amplifier, when amplifying radiofrequency signal to be amplified, all need to select the amplifier corresponding with radiofrequency signal to be amplified by amplifying selected on-off circuit, namely amplify selected on-off circuit 8 and can enable amplifier corresponding in gain stage circuit 16 according to radiofrequency signal to be amplified, and do not selected the amplifier determined generally to be in off state in gain stage circuit 16.By load circuit 24, radio frequency output signal is amplified output by radiofrequency signal to export, load circuit 24 is also connected with supply voltage VDD, and the size of supply voltage VDD is carried out selection as required and determined.Coordinating with the connection of gain stage circuit 16 ability reaching and realize radio-frequency (RF) switch and low noise amplification by amplifying selected on-off circuit 8, reducing area occupied, reducing the object of parasitic effects.
Further, described gain stage circuit 16 is also connected with the coupling circuit 4 for ground connection.In the embodiment of the present invention, described coupling circuit 4 comprises coupling inductance, and described coupling inductance comprises on-chip inductor, base plate for packaging inductance, discrete device inductance or bondwire inductance.
The output of described gain stage circuit 16 is connected with load circuit 24 by driving stage circuit 20, and described radiofrequency signal amplifies the junction that output is formed at driving stage circuit 20 and load circuit 24.In the embodiment of the present invention, described at least one driving transistors of driving stage circuit 20.Described load circuit 24 comprises load inductance, load capacitance, load resistance, Ba Lun or transistor.Can be driven all radio frequency amplifying signals amplified through amplifier by driving stage circuit 20, obtain radio frequency output signal to amplify output in radiofrequency signal.
In addition, described amplifier comprises gain transistor, and during described gain transistor employing metal-oxide-semiconductor, radiofrequency signal is loaded into the gate terminal of gain transistor, and the gate terminal of gain transistor is also connected with amplification selected on-off circuit 8, the drain electrode end of gain transistor is connected with load circuit 24.
Described amplification selected on-off circuit 8 comprises the amplification selection circuit consistent with amplifier quantity in gain stage circuit, described amplification selection circuit comprises the mains switch that one end is connected with bias voltage Vbias, the other end of described mains switch connects by selecting the resistor amplifier corresponding with earthed switch and gain stage circuit, the other end ground connection of earthed switch.
In the embodiment of the present invention, radiofrequency signal to be amplified loads on the gate terminal of gain transistor simultaneously, one end of earthed switch connects, the on off state of mains switch, earthed switch produces control circui by control signal, the concrete form of control signal generation circuit can carry out selection as required and determine, is specially the art personnel and determines.When the control signal that control signal generation circuit produces makes mains switch closed and earthed switch disconnects, the gain transistor conducting be connected with described amplification selection circuit can be made, thus by gain transistor, radiofrequency signal to be amplified is amplified.During concrete enforcement, control signal produces circuit can carry out independent control to amplifying selection circuit in amplification selected on-off circuit 8, amplification selection circuit in amplification selected on-off circuit 8 and the amplifier in gain stage circuit 16, in connecting one to one, namely realize amplifier in gain stage circuit 16 and amplify the independence of each radiofrequency signal to be amplified.The operating frequency of radiofrequency signal to be amplified or frequency range can be identical or different, specifically carry out selection as required and determine, repeat no more herein.In addition, the quantity of described coupling inductance is one or consistent with the quantity of gain transistor in gain stage circuit 16, and the source terminal of described gain transistor is by coupling inductance ground connection.
Fig. 1 is the concrete using state block diagram of one of the present invention, radiofrequency signal to be amplified is formed by matching network and antenna, and be loaded into the present invention with on the low noise amplifier of switch, the radio frequency output signal that described radiofrequency signal amplifies output output carries out amplifying or exporting after mixing through post-amplifier/frequency mixer, the effect of matching network and post-amplifier/frequency mixer and object, known by the art personnel, repeat no more herein.
Further, described gain stage circuit is used for the input of received RF signal and radiofrequency signal and amplifies and to be provided with for alleviating between output that radiofrequency signal amplitude is excessive causes the bypass circuit exporting distortion, described bypass circuit comprises the bypass branch consistent with radiofrequency signal quantity to be amplified, and described bypass branch is with amplification selected on-off circuit, gain stage circuit is corresponding connects;
Bypass branch comprises bypass selector switch, and one end of described bypass selector switch is connected with amplification selected on-off circuit and gain stage circuit, and the other end of bypass selector switch amplifies output by coupling partition capacitor with radiofrequency signal and is connected.
In the embodiment of the present invention, when the amplitude of radiofrequency signal to be amplified is excessive, the radio frequency output signal distortion of amplifying output output from radiofrequency signal can be caused again after gain stage circuit 16 and driving stage circuit 20, now, amplify selected on-off circuit 8 and do not select arbitrary amplifier in gain stage circuit 16, namely in gain stage circuit 16, all amplifiers are all in closed condition, and radiofrequency signal to be amplified is loaded into radiofrequency signal by bypass branch and amplifies output.The on off state of bypass selector switch also has control signal generation circuit to control, when control signal produce control signal that circuit produces make bypass selector switch be in closure state time, the radiofrequency signal to be amplified be connected with described bypass selector switch can be made through being coupled to cut off capacitor and to be transferred to radiofrequency signal and to amplify output.It is the capacitor that AC coupling/DC cuts off that described coupling cuts off capacitor.
According to above-mentioned, utilization of the present invention is with the amplification method of the low noise amplifier radio frequency signal of switch, be specially: utilize gain stage circuit 16 to receive radiofrequency signal to be amplified, the amplifier consistent with radiofrequency signal quantity to be amplified is comprised in described gain stage circuit 16, described amplifier and radiofrequency signal one_to_one corresponding, carry out independent amplification with Neng Duimei road radiofrequency signal;
The amplification selected on-off circuit 8 that utilization is connected with gain stage circuit 16 selects the amplifier in gain stage circuit 16 according to radiofrequency signal to be amplified, to make to select the amplifier determined can amplify described radiofrequency signal in described gain stage circuit 16;
To gain stage circuit put 16 large after radio frequency output signal, the radiofrequency signal utilizing load circuit 24 to be formed amplifies output output.
In the embodiment of the present invention, the described low noise amplifier with switch can adopt various circuit framework to realize, and also can realize with various types of active, passive device.Below set forth some embodiments of the low noise amplifier with switch adopting N NMOS N-channel MOS N (NMOS) transistor to realize.
As shown in Figure 2, form the first low noise amplifier 2 by amplifying selected on-off circuit 8, gain stage circuit 16, coupling circuit 4, driving stage circuit 20 and load circuit 24, described first low noise amplifier 2 can amplify rear output to two input radio frequency signal RFin1, radiofrequency signal RFin2.
Particularly, coupling circuit 4 comprises a coupling inductance 4a for source negative feedback, and gain stage circuit 16 comprises gain transistor 16a and gain transistor 16b, and described gain transistor 16a, gain transistor 16b all adopt NMOS tube.The source terminal of gain transistor 16a, the source terminal of gain transistor 16b are all connected with one end of coupling inductance 4a, the other end ground connection of coupling inductance 4a.In addition, the source terminal of gain transistor 16a, the source terminal of gain transistor 16b can direct ground connection, also can respectively by a coupling inductance 4a ground connection.
Driving stage circuit 20 comprises driving transistors 20a and driving transistors 20b, and driving transistors 20a, driving transistors 20b all adopt NMOS tube.The gate electrode of driving transistors 20a, the gate terminal of driving transistors 20b are all connected with bias voltage Vbias1, the source terminal of driving transistors 20a is connected with the drain electrode end of gain transistor 16a, and the source terminal of driving transistors 20b is connected with the drain electrode end of gain transistor 16b.Load circuit 24 comprises load inductance 24a, one end of load inductance 24a is connected with supply voltage VDD, the other end of load inductance 24a is connected with the drain electrode end of the drain electrode end of driving transistors 20a, driving transistors 20b, and the drain electrode end of the drain electrode end of the other end of load inductance 24a and driving transistors 20a, driving transistors 20b is interconnected rear formation radiofrequency signal amplifies output RFout.The size of bias voltage Vbias1 can be carried out selection as required and be determined, is specially known by the art personnel, repeats no more herein.In addition, load circuit 24 also can comprise load capacitance and/or load resistance, and load circuit 24 can also comprise Ba Lun, and load circuit can also comprise transistor, to provide active load.The frequency response of output loading circuit 24 can be arrowband, also can be broadband.Radio frequency output signal RFout directly can output to next stage, also can be coupled via AC/DC cut off capacitor output to next stage, specifically can select as required.
Amplify selected on-off circuit 8 and comprise two-way amplification selection circuit, comprise mains switch 10a, mains switch 10b, earthed switch 12a and earthed switch 12b respectively, one end of mains switch 10a, one end of mains switch 10b are connected with bias voltage Vbias, the other end of mains switch 10a is connected with selecting one end of resistor 14a, the other end of resistor 14a is selected to be connected with one end of earthed switch 12a and the gate terminal of gain transistor 16a, the other end ground connection of earthed switch 12a.The other end of mains switch 10b is connected with selecting one end of resistor 14b, selects the other end of resistor 14b to be connected with one end of earthed switch 12b and the gate terminal of gain transistor 16b, the other end ground connection of earthed switch 12b.Radiofrequency signal RFin1 to be amplified is loaded into the gate terminal of gain transistor 16a, and radiofrequency signal RFin2 to be amplified is loaded into the gate terminal of gain transistor 16b.The open and-shut mode of mains switch 10a, mains switch 10b, earthed switch 12a and earthed switch 12b respectively suspension control signal produces circuit and controls.Frequency or the frequency range of radiofrequency signal RFin1 to be amplified, radiofrequency signal RFin2 to be amplified can be identical or different.
When mains switch 10a closes, when earthed switch 12a disconnects, then the gate terminal of bias voltage Vbias through selecting resistor 14a to be loaded into gain transistor 16a, gain transistor 16a conducting; Meanwhile, mains switch 10b disconnects, and earthed switch 12b closes, then the gate terminal of gain transistor 16b is pulled down to ground, and gain transistor 16 is closed.Bias voltage Vbias also directly can be loaded into the gate terminal of gain transistor 16a and/or the gate terminal of gain transistor 16b.During concrete enforcement, one end of earthed switch 12a can also be connected with the other end of mains switch 10a, the other end ground connection of earthed switch 12a, one end of earthed switch 12b can also be connected with the other end of mains switch 10b, the other end ground connection of earthed switch 12b, now, the gate electrode of gain transistor 16a, the gate terminal of gain transistor 16b are pulled down to ground respectively through selection resistor 14a, selection resistor 14b.
During concrete enforcement, when mains switch 10a is closed, earthed switch 12a disconnects, simultaneously, when mains switch 10b is closed, earthed switch 12b disconnects, then gain transistor 16a, gain transistor 16b simultaneously conducting, namely by gain transistor 16a to radiofrequency signal RFin1 to be amplified, amplified by gain transistor 16b radiofrequency signal RFin2 to be amplified simultaneously simultaneously.Owing to having good input impedance isolation between gain transistor 16a, gain transistor 16b, between gain transistor 16a, gain transistor 16b during arbitrary conducting, because the effect of impedance isolation can not cause another gain transistor to change.
As shown in Figure 3, form the second low noise amplifier 28 by amplifying selected on-off circuit 8, gain stage circuit 16, coupling circuit 4, driving stage circuit 20 and load circuit 24, described second low noise amplifier 28 can amplify rear output to two input radio frequency signals RFin1, RFin2.
Particularly, coupling circuit 4 comprises coupling inductance 4b and coupling inductance 4c, amplify selected on-off circuit 8 to comprise mains switch 10c, mains switch 10d, select resistor 14c, select resistor 14d, earthed switch 12c and earthed switch 12d, gain stage circuit 16 to comprise gain transistor 16c and gain transistor 16d, driving stage circuit 20 comprises driving transistors 20c and driving transistors 20d, and load circuit 24 comprises load inductance 24b.
Wherein, gain transistor 16c, gain transistor 16d, driving transistors 20c, driving transistors 20d all adopt NMOS tube.The source terminal of gain transistor 16c is connected with one end of coupling inductance 4b, the other end ground connection of coupling inductance 4b, and the source terminal of gain transistor 16d is connected with one end of coupling inductance 4c, the other end ground connection of coupling inductance 4c.The gate terminal of gain transistor 16c with one end of earthed switch 12c, select one end of resistor 14c to be connected, and the gate terminal of gain transistor 16c be used for received RF signal RFin1.The other end ground connection of earthed switch 12c, select the other end of resistor 14c to be connected with one end of mains switch 10c, the other end of mains switch 10c is connected with bias voltage Vbias.
The gate terminal of gain transistor 16d with one end of earthed switch 12d, select one end of resistor 14d to be connected, and the gate terminal of gain transistor 16d be used for received RF signal RFin2.The other end ground connection of earthed switch 12d, select the other end of resistor 14d to be connected with one end of mains switch 10d, the other end of mains switch 10d is connected with bias voltage Vbias.
The drain electrode end of gain transistor 16c is connected with the source terminal of driving transistors 20c, the drain electrode end of gain transistor 16d is connected with the source terminal of driving transistors 20d, and the gate terminal of driving transistors 20c, the gate terminal of driving transistors 20d are all connected with bias voltage Vbias1.The drain electrode end of driving transistors 20c, the drain electrode end of driving transistors 20d are all connected with one end of load inductance 24b, and the other end of load inductance 24b is connected with supply voltage VDD.The junction of the drain electrode end of load inductance 24b and driving transistors 20c, the drain electrode end of driving transistors 20d forms radiofrequency signal and amplifies output RFout.
Frequency or the frequency range at radiofrequency signal RFin1 and radiofrequency signal RFin2 place can be identical, also can be different.The effect of amplifying selected on-off circuit 8, coupling circuit 4, gain stage circuit 16, driving stage circuit 20 and load circuit 24 all illustrates consistent with corresponding in Fig. 2, only in coupling circuit 4, adopt coupling inductance 4b to be connected with the source terminal of gain stage transistor 16c respectively, coupling inductance 4c is connected with the source terminal of gain transistor 16d, and the concrete course of work no longer describes in detail.
As shown in Figure 4, form the 3rd low noise amplifier 54 by amplifying selected on-off circuit 8, gain stage circuit 16, coupling circuit 4, driving stage circuit 20 and load circuit 24, described 3rd low noise amplifier 54 can amplify rear output to two input radio frequency signals RFin1, RFin2.
Wherein, coupling circuit 4 comprises coupling inductance 4d, amplifies selected on-off circuit 8 and comprises mains switch 10e, mains switch 10f, selects resistor 14e, selects resistor 14f, earthed switch 12e and earthed switch 12f; Gain stage circuit 16 comprises gain transistor 16e, gain transistor 16f, and driving stage circuit 20 comprises driving transistors 20e, and load circuit 24 comprises load inductance 24c.Gain transistor 16e, gain transistor 16f and driving transistors 20e all adopt nmos pass transistor.
The source terminal of gain transistor 16e, the source terminal of gain transistor 16f are all connected with one end of coupling inductance 4d, the other end ground connection of coupling inductance 4d.The gate electrode of gain transistor 16e is with one end of earthed switch 12e and select one end of resistor 14e to be connected, and the gate terminal of gain transistor 16e is used for received RF signal RFin1.The other end ground connection of earthed switch 12e, select the other end of resistor 14e to be connected with one end of mains switch 10e, the other end of mains switch 10e is connected with bias voltage Vbias.
The gate terminal of gain transistor 16f is with one end of earthed switch 12f and select one end of resistor 14f to be connected, and the gate terminal of gain transistor 16f is used for received RF signal RFin2.The other end ground connection of earthed switch 12f, selects the other end of resistor 14f to be connected with one end of mains switch 10f, and the other end of mains switch 10f connects bias voltage Vbias.
The drain electrode end of gain transistor 16e, the drain electrode end of gain transistor 16f are all connected with the source terminal of driving transistors 20e, the gate electrode of driving transistors 20e is connected with bias voltage Vbias1, the drain electrode end of driving transistors 20e is connected with one end of load inductance 24c, and the other end of load inductance 24c is connected with supply voltage VDD.The junction of the drain electrode end of load inductance 24c and driving transistors 20e forms radiofrequency signal and amplifies output RFout.
Frequency or the frequency range at radiofrequency signal RFin1 and radiofrequency signal RFin2 place can be identical, also can be different.The effect of amplifying selected on-off circuit 8, coupling circuit 4, gain stage circuit 16, driving stage circuit 20 and load circuit 24 all illustrates consistent with corresponding in Fig. 2, only only comprise driving transistors 20e in driving stage circuit 20, and the source terminal of driving transistors 20e is connected with the drain electrode end of gain transistor 16e and the drain electrode end of gain transistor 16f simultaneously, the grid termination bias voltage Vbias1 of driving transistors 20e, the drain electrode end of driving transistors 20e is connected with load inductance 24c, and the concrete course of work of the 3rd low noise amplifier 54 no longer describes in detail.
As shown in Figure 5, form the 4th low noise amplifier 80 by amplifying selected on-off circuit 8, gain stage circuit 16, coupling circuit 4, driving stage circuit 20 and load circuit 24, described 4th low noise amplifier 80 can amplify rear output to two input radio frequency signals RFin1, RFin2.
Wherein, coupling circuit 4 comprises coupling inductance 4e and coupling inductance 4f, amplifies selected on-off circuit 8 and comprises mains switch 10g, mains switch 10h, selects resistor 14g, selects resistor 14h, earthed switch 12g and earthed switch 12h; Gain stage circuit 16 comprises gain transistor 16g, gain transistor 16h, and driving stage circuit 20 comprises driving transistors 20f, and load circuit 24 comprises load inductance 24d.Gain transistor 16g, gain transistor 16h and driving transistors 20f all adopt nmos pass transistor.
The source terminal of gain transistor 16g, the source terminal of gain transistor 16h are connected with one end of coupling inductance 4e, one end of coupling inductance 4f respectively, the other end of coupling inductance 4e, the equal ground connection of the other end of coupling inductance 4f.The gate electrode of gain transistor 16g is with one end of earthed switch 12g and select one end of resistor 14g to be connected, and the gate terminal of gain transistor 16g is used for received RF signal RFin1.The other end ground connection of earthed switch 12g, select the other end of resistor 14g to be connected with one end of mains switch 10g, the other end of mains switch 10g is connected with bias voltage Vbias.
The gate terminal of gain transistor 16h is with one end of earthed switch 12h and select one end of resistor 14h to be connected, and the gate terminal of gain transistor 16h is used for received RF signal RFin2.The other end ground connection of earthed switch 12h, selects the other end of resistor 14h to be connected with one end of mains switch 10h, and the other end of mains switch 10h connects bias voltage Vbias.
The drain electrode end of gain transistor 16g, the drain electrode end of gain transistor 16h are all connected with the source terminal of driving transistors 20f, the gate electrode of driving transistors 20f is connected with bias voltage Vbias1, the drain electrode end of driving transistors 20f is connected with one end of load inductance 24d, and the other end of load inductance 24d is connected with supply voltage VDD.The junction of the drain electrode end of load inductance 24d and driving transistors 20f forms radiofrequency signal and amplifies output RFout.
Frequency or the frequency range at radiofrequency signal RFin1 and radiofrequency signal RFin2 place can be identical, also can be different.The effect of amplifying selected on-off circuit 8, coupling circuit 4, gain stage circuit 16, driving stage circuit 20 and load circuit 24 all illustrates consistent with corresponding in Fig. 2, be only only comprise driving transistors 20f in driving stage circuit 20, and coupling circuit 4 comprise coupling inductance 4e and coupling inductance ef simultaneously; The source terminal of driving transistors 20f is connected with the drain electrode end of gain transistor 16g and the drain electrode end of gain transistor 16h simultaneously, the grid termination bias voltage Vbias1 of driving transistors 20f, the drain electrode end of driving transistors 20f is connected with load inductance 24d, the source terminal of gain transistor 16g is by coupling inductance 4e ground connection, the source terminal of gain transistor 16h is by coupling inductance 4f ground connection, and the concrete course of work of the 4th low noise amplifier 80 no longer describes in detail.
As shown in Figure 6, form the 5th low noise amplifier 106 by amplifying selected on-off circuit 8, gain stage circuit 16, coupling circuit 4, driving stage circuit 20 and load circuit 24, described 5th low noise amplifier 106 can amplify rear output to two input radio frequency signals RFin1, RFin2.
Wherein, coupling circuit 4 comprises coupling inductance 4g, amplifies selected on-off circuit 8 and comprises mains switch 10i, mains switch 10j, selects resistor 14i, selects resistor 14j, earthed switch 12i and earthed switch 12j; Gain stage circuit 16 comprises gain transistor 16i, gain transistor 16j, and driving stage circuit 20 comprises driving transistors 20g and driving transistors 20h, and load circuit 24 comprises Ba Lun (Balun).Gain transistor 16i, gain transistor 16j and driving transistors 20g and driving transistors 20h all adopt nmos pass transistor.
The source terminal of gain transistor 16i, the source terminal of gain transistor 16j are all connected with one end of coupling inductance 4g, coupling inductance 4
g other end ground connection.The gate electrode of gain transistor 16i is with one end of earthed switch 12i and select one end of resistor 14i to be connected, and the gate terminal of gain transistor 16i is used for received RF signal RFin1.The other end ground connection of earthed switch 12i, select the other end of resistor 14i to be connected with one end of mains switch 10i, the other end of mains switch 10i is connected with bias voltage Vbias.
The gate terminal of gain transistor 16j is with one end of earthed switch 12j and select one end of resistor 14j to be connected, and the gate terminal of gain transistor 16j is used for received RF signal RFin2.The other end ground connection of earthed switch 12j, selects the other end of resistor 14j to be connected with one end of mains switch 10j, and the other end of mains switch 10j connects bias voltage Vbias.
The drain electrode end of gain transistor 16i, the drain electrode end of gain transistor 16j are connected with the source terminal of driving transistors 20g, the source terminal of driving transistors 20h respectively, the gate electrode of driving transistors 20g, the gate terminal of driving transistors 20h are connected with bias voltage Vbias1, the drain electrode end of driving transistors 20h, the drain electrode end of driving transistors 20g are connected with the imbalance end 24f of Ba Lun, the imbalance end 24e of Ba Lun is connected with supply voltage VDD, and balance end 24g, the 24h of Ba Lun amplify output RFout for the formation of radiofrequency signal.
Frequency or the frequency range at radiofrequency signal RFin1 and radiofrequency signal RFin2 place can be identical, also can be different.The effect of amplifying selected on-off circuit 8, coupling circuit 4, gain stage circuit 16, driving stage circuit 20 and load circuit 24 all illustrates consistent with corresponding in Fig. 2, be only that load circuit 24 adopts Ba Lun, the concrete course of work of the 5th low noise amplifier 106 no longer describes in detail.
As shown in Figure 7, by coupling circuit 4, amplify selected on-off circuit 8, gain stage circuit 16, driving stage circuit 20, load circuit 24 and bypass circuit formation the 6th low noise amplifier 134, wherein, bypass circuit is for alleviating the excessive output distortion caused of radiofrequency signal amplitude.6th low noise amplifier 134 is enlarged into example with radio frequency signal RFin1 and radiofrequency signal RFin2 and is described.
Amplify selected on-off circuit 8 and comprise mains switch 10k, mains switch 10l, select resistor 14k, select resistor 14l, earthed switch 12k and earthed switch 12l, wherein mains switch 10k, one end of mains switch 10l all meets bias voltage Vbias, the other end and the one end selecting resistor 14k of mains switch 10k, one end of earthed switch 12k connects, select the other end and the gain stage circuit 16 of resistor 14k, bypass circuit connects, the other end and the one end selecting resistor 14l of mains switch 10l, one end of earthed switch 12l connects, select the other end and the gain stage circuit 16 of resistor 14l, bypass circuit connects, earthed switch 12k, the equal ground connection of the other end of earthed switch 12l.
Due to the present embodiment only radio frequency signal RFin1 and radiofrequency signal RFin2 be enlarged into example and be described, then namely described bypass circuit comprises two bypass branch, bypass branch comprises bypass selector switch 146a, bypass selector switch 146b, coupling cuts off electric capacity 148a and coupling cuts off electric capacity 148b, wherein, one end of bypass selector switch 146a is connected with selecting the other end of resistor 14k, the other end of bypass selector switch 146a amplifies output RFout by coupling partition electric capacity 148a with radiofrequency signal and is connected, one end of bypass selector switch 146b is connected with selecting the other end of resistor 14l, the other end of bypass selector switch 146b amplifies output RFout by coupling partition electric capacity 148b with radiofrequency signal and is connected.
The on off state of bypass selector switch 146a, bypass selector switch 146b produces circuit by control signal and controls, when control signal produce circuit make bypass selector switch 146a, bypass selector switch 146b be in off-state time, then bypass circuit can not work, the course of work of whole 6th low noise amplifier 134 can with reference to above-mentioned explanation, namely the explanation of the course of work all with above-mentioned of coupling circuit 4, gain stage circuit 16, driving stage circuit 20, load circuit and amplification selected on-off circuit 8 is consistent, and detailed process repeats no more.
When radiofrequency signal RFin1 and radiofrequency signal RFin2 exist amplitude excessive time, then by gain stage circuit 16, driving stage circuit 20 carry out amplification export time, can cause export distortion comparatively serious.Now, control signal produces the transmission that circuit selects bypass circuit radio frequency signal RFin1 and/or radiofrequency signal RFin2.Particularly, the earthed switch 12k, the earthed switch 12l that amplify in selected on-off circuit 8 are all closed, make gain stage circuit 16 radio frequency signal RFin1, radiofrequency signal RFin2 can not carry out amplifieroperation.When bypass selector switch 146a closes, radiofrequency signal RFin1 cuts off electric capacity 148a by coupling and transfers to radiofrequency signal amplification output RFout; When bypass selector switch 146b closes, radiofrequency signal RFin2 cuts off electric capacity 148b by coupling and transfers to radiofrequency signal amplification output RFout.
Above-mentioned Fig. 2 ~ Fig. 7 is the situation of amplifying two-way radiofrequency signal, when the situation that multi-channel rf signal is amplified as shown in Figure 8.
As shown in Figure 8, when amplifying multi-channel rf signal, there is multiple gain transistor in gain stage circuit 16, amplify in selected on-off circuit 8 and comprise multiple amplification selection circuit, amplify the quantity of selection circuit, the quantity of gain transistor is consistent with the quantity of radiofrequency signal to be amplified.
In the embodiment of the present invention, multiple amplification selection circuit is separate, amplify selection circuit with between gain transistor for be connected one to one, each amplification selection circuit can be selected a gain transistor whether radio frequency signal amplifies.In Fig. 8, mains switch 10m, select resistor 14m, earthed switch 12m, earthed switch 13m forms a road and amplifies selection circuit, described amplification selection circuit is corresponding with gain transistor 16m, wherein, one end of mains switch 10m is connected with bias voltage Vbias, the other end of mains switch 10m and one end of earthed switch 13m, one end of resistor 14m is selected to connect, the other end ground connection of earthed switch 13m, the other end of resistor 14m is selected to be connected with one end of earthed switch 12m and the gate terminal of gain transistor 16m, the gate terminal of gain transistor 16m is used for received RF signal RFin1.
Mains switch 10n, select resistor 14n, earthed switch 12n, earthed switch 13n forms a road and amplifies selection circuit, described amplification selection circuit is corresponding with gain transistor 16n, wherein, one end of mains switch 10n is connected with bias voltage Vbias, the other end of mains switch 10n and one end of earthed switch 13n, one end of resistor 14n is selected to connect, the other end ground connection of earthed switch 13n, the other end of resistor 14n is selected to be connected with one end of earthed switch 12n and the gate terminal of gain transistor 16n, the gate terminal of gain transistor 16n is used for received RF signal RFin2.
Mains switch 10p, select resistor 14p, earthed switch 12p, earthed switch 13p forms a road and amplifies selection circuit, described amplification selection circuit is corresponding with gain transistor 16p, wherein, one end of mains switch 10p is connected with bias voltage Vbias, the other end of mains switch 10p and one end of earthed switch 13p, one end of resistor 14p is selected to connect, the other end ground connection of earthed switch 13p, the other end of resistor 14p is selected to be connected with one end of earthed switch 12p and the gate terminal of gain transistor 16p, the gate terminal of gain transistor 16p is used for received RF signal RFinn.Above-mentioned gain transistor 16m, gain transistor 16n and gain transistor 16p adopt the type of attachment of common source.
The fit form amplifying gain transistor in selected on-off circuit 8 all the other amplification selection circuits interior and gain stage circuit 16 can illustrate with reference to foregoing description, specifically repeats no more.
For the matching relationship amplifying selection circuit and gain transistor, connect for gain transistor 16m and described gain transistor 16m the amplification selection circuit coordinated and be described.Particularly, have three kinds of annexations between the gate terminal of bias voltage Vbias and gain transistor 16m: the first is: mains switch 10m closes and earthed switch 13m and earthed switch 12m disconnects, bias voltage Vbias is via the grid selecting resistor 14m to be added to gain transistor 16m; The second is: mains switch 10m and earthed switch 13m disconnects and earthed switch 12m closes, and the gate terminal of gain transistor 16m is directly pulled down to ground, and this is a kind of more satisfactory ground connection, but can introduce some parasitisms by earthed switch 12m; The third is: mains switch 10m and earthed switch 12m disconnects and earthed switch 13m closes, and the gate terminal of gain transistor 16m is pulled down to ground via selection resistor 14m.
To sum up, when there is bypass circuit and transmitted by bypass circuit radio frequency signal, gain stage transistor 16m adopts the third mode ground connection described.In another embodiment, earthed switch 13m can be only had and no ground switch 12m, so bias voltage Vbias is via the gate terminal selecting resistor 14m to be added to gain transistor 16m, to enable gain transistor 16m, or the gate terminal of gain transistor 16 via selection resistor 14m be pulled down to not to be activated.In another embodiment, earthed switch 12m can be only had, and there is not earthed switch 13m, so bias voltage Vbias is via the gate terminal selecting resistor 14m to be added to gain transistor 16m, to enable gain transistor 16m, or the gate terminal of gain transistor 16 be directly pulled down to not to be activated.
The low noise amplifier of the belt switch function described in the embodiment of the present invention mainly comprises amplification selected on-off circuit 8, coupling circuit 4, gain stage circuit 16, driving stage circuit 20, load circuit 24 and bypass circuit, each several part all at least describes a kind of configuration mode, so can derive multiple possible circuit structure.These structures all should be included within protection scope of the present invention, but not in order to limit the present invention.
The low noise amplifier of the belt switch function described in the embodiment of the present invention can realize on the various ways such as IC, RFIC, numerical model analysis IC, ASIC, and manufacturing process also can be the kinds of processes such as CMOS, CMOSSOI, SiGe, GaAs, pHEMT, HBT, BJT, BiCMOS.
Above lifted embodiment; the object, technical solutions and advantages of the present invention are further described; be understood that; more than describe and be only some embodiments of the present invention; not in order to limit the present invention; within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (15)
1. with a low noise amplifier for switch, it is characterized in that, comprise
Gain stage circuit, comprises the amplifier consistent with radiofrequency signal quantity to be amplified, and described amplifier and radiofrequency signal one_to_one corresponding carry out independent amplification with Neng Duimei road radiofrequency signal;
Amplify selected on-off circuit, be connected with gain stage circuit, the amplifier in gain stage circuit can be selected according to radiofrequency signal to be amplified, can amplify described radiofrequency signal to make the amplifier selecting in described gain stage circuit to determine;
Load circuit, for receiving the radio frequency output signal after gain stage circuit is amplified, and forms the radiofrequency signal amplification output exported by the radio frequency output signal after amplifying through gain stage circuit.
2. the low noise amplifier with switch according to claim 1, is characterized in that: described gain stage circuit is also connected with the coupling circuit for ground connection.
3. the low noise amplifier with switch according to claim 1, it is characterized in that: the output of described gain stage circuit is connected with load circuit by driving stage circuit, described radiofrequency signal amplifies the junction that output is formed at driving stage circuit and load circuit.
4. the low noise amplifier with switch according to claim 1, it is characterized in that: described amplifier comprises gain transistor, during described gain transistor employing metal-oxide-semiconductor, radiofrequency signal is loaded into the gate terminal of gain transistor, and the gate terminal of gain transistor is also connected with amplification selected on-off circuit, the drain electrode end of gain transistor is connected with load circuit.
5. the low noise amplifier with switch according to claim 1, it is characterized in that: described amplification selected on-off circuit comprises the amplification selection circuit consistent with amplifier quantity in gain stage circuit, described amplification selection circuit comprises the mains switch that one end is connected with bias voltage Vbias, the other end of described mains switch connects by selecting the resistor amplifier corresponding with earthed switch and gain stage circuit, the other end ground connection of earthed switch.
6. the low noise amplifier with switch according to claim 1, is characterized in that: described load circuit comprises load inductance, load capacitance, load resistance, Ba Lun or transistor.
7. the low noise amplifier with switch according to claim 2, is characterized in that: described coupling circuit comprises coupling inductance, described coupling inductance comprises on-chip inductor, base plate for packaging inductance, discrete device inductance or bondwire inductance.
8. the low noise amplifier with switch according to claim 3, is characterized in that: described at least one driving transistors of driving stage circuit.
9. the low noise amplifier with switch according to claim 1, it is characterized in that: described gain stage circuit is used for the input of received RF signal and radiofrequency signal and amplifies and to be provided with for alleviating between output that radiofrequency signal amplitude is excessive causes the bypass circuit exporting distortion, described bypass circuit comprises the bypass branch consistent with radiofrequency signal quantity to be amplified, and described bypass branch is with amplification selected on-off circuit, gain stage circuit is corresponding connects;
Bypass branch comprises bypass selector switch, and one end of described bypass selector switch is connected with amplification selected on-off circuit and gain stage circuit, and the other end of bypass selector switch amplifies output by coupling partition capacitor with radiofrequency signal and is connected.
10. the low noise amplifier with switch according to claim 4, it is characterized in that: described gain stage circuit is also connected with the coupling circuit for ground connection, described coupling circuit comprises coupling inductance, the quantity of described coupling inductance is one or consistent with the quantity of gain transistor in gain stage circuit, and the source terminal of described gain transistor is by coupling inductance ground connection.
11. 1 kinds utilize the amplification method with the low noise amplifier radio frequency signal of switch, it is characterized in that: utilize gain stage circuit to receive radiofrequency signal to be amplified, the amplifier consistent with radiofrequency signal quantity to be amplified is comprised in described gain stage circuit, described amplifier and radiofrequency signal one_to_one corresponding, carry out independent amplification with Neng Duimei road radiofrequency signal;
The amplification selected on-off circuit that utilization is connected with gain stage circuit selects the amplifier in gain stage circuit according to radiofrequency signal to be amplified, can amplify to make the amplifier selecting in described gain stage circuit to determine to described radiofrequency signal;
Radio frequency output signal after amplifying gain stage circuit, the radiofrequency signal utilizing load circuit to be formed is amplified output and is exported.
12., according to the amplification method of the low noise amplifier radio frequency signal utilized described in claim 11 with switch, is characterized in that: described amplification selected on-off circuit is selected to determine that the quantity of amplifier is less than or equal to the amplifier quantity comprised in gain stage circuit.
13., according to the amplification method of the low noise amplifier radio frequency signal utilized described in claim 11 with switch, is characterized in that: described gain stage circuit is also connected with the coupling circuit for ground connection.
14. according to the amplification method of the low noise amplifier radio frequency signal utilized described in claim 11 with switch, it is characterized in that: the output of described gain stage circuit is connected with load circuit by driving stage circuit, described radiofrequency signal amplifies the junction that output is formed at driving stage circuit and load circuit.
15. according to the amplification method of the low noise amplifier radio frequency signal utilized described in claim 11 with switch, it is characterized in that: described gain stage circuit is used for the input of received RF signal and radiofrequency signal and amplifies and to be provided with for alleviating between output that radiofrequency signal amplitude is excessive causes the bypass circuit exporting distortion, described bypass circuit comprises the bypass branch consistent with radiofrequency signal quantity to be amplified, and described bypass branch is with amplification selected on-off circuit, gain stage circuit is corresponding connects;
Bypass branch comprises bypass selector switch, and one end of described bypass selector switch is connected with amplification selected on-off circuit and gain stage circuit, and the other end of bypass selector switch amplifies output by coupling partition capacitor with radiofrequency signal and is connected.
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| CN112187183A (en) * | 2020-10-14 | 2021-01-05 | 成都振芯科技股份有限公司 | Broadband low-noise amplifier with differential structure |
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| CN113507295A (en) * | 2021-09-13 | 2021-10-15 | 成都明夷电子科技有限公司 | Application method of fully-integrated broadband configurable front end based on SOI CMOS process |
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