CN105280799A - LED chip production technology - Google Patents
LED chip production technology Download PDFInfo
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- CN105280799A CN105280799A CN201510604440.2A CN201510604440A CN105280799A CN 105280799 A CN105280799 A CN 105280799A CN 201510604440 A CN201510604440 A CN 201510604440A CN 105280799 A CN105280799 A CN 105280799A
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- 238000005516 engineering process Methods 0.000 title claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 238000003466 welding Methods 0.000 claims abstract description 46
- 238000000034 method Methods 0.000 claims abstract description 18
- 238000001035 drying Methods 0.000 claims abstract description 8
- 239000003292 glue Substances 0.000 claims description 28
- 239000004593 Epoxy Substances 0.000 claims description 21
- 210000003205 muscle Anatomy 0.000 claims description 15
- 238000004806 packaging method and process Methods 0.000 claims description 14
- 238000012360 testing method Methods 0.000 claims description 11
- 238000005245 sintering Methods 0.000 claims description 10
- 238000004140 cleaning Methods 0.000 claims description 8
- 230000032683 aging Effects 0.000 claims description 5
- 239000000084 colloidal system Substances 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 238000007689 inspection Methods 0.000 claims description 5
- 239000007787 solid Substances 0.000 claims description 5
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 5
- 238000012856 packing Methods 0.000 claims description 4
- 229910000831 Steel Inorganic materials 0.000 abstract description 3
- 238000009792 diffusion process Methods 0.000 abstract description 3
- 239000010959 steel Substances 0.000 abstract description 3
- 238000003754 machining Methods 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 abstract 3
- 230000003068 static effect Effects 0.000 abstract 2
- 239000002023 wood Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 description 6
- 230000008020 evaporation Effects 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Packaging Frangible Articles (AREA)
Abstract
The invention discloses an LED chip production technology. During a machining process, constant temperature drying is employed and lasts for 30 minutes at the temperature of 75 DEG C. At this temperature, moisture on a support can be quickly evaporated, and the structure of the support can not be destroyed. Before chip expansion, a chip is pre-heated at the pre-heating temperature of 50 DEG C. The pre-heating enables the chip structure soft, and in the expansion process, the shape is easy to change. A wood vacuum suction nozzle is used to suck the LED chip up and move. The wood suction nozzle can prevent damage to the surface of the LED chip compared with the condition in which a steel nozzle may scratch a current diffusion layer on the chip surface. The pre-heating is carried out before the pressure welding at the temperature of 220 DEG C. Before the pressure welding, a welder is preheated so as to continuously keep the pressure welding temperature during the pressure welding process. Antistatic packages are employed for finished products. Circuit systems in the chips are easily interfered by the static so as to make the chips unstable, thus the antistatic packages can effectively prevent the static interference.
Description
Technical field
The present invention relates to LED field, particularly relate to a kind of LED chip production technology.
Background technology
LED chip is a kind of solid-state semiconductor device, and the heart of LED is the wafer of a semiconductor, and one end of wafer is attached on a support, and one end is negative pole, and the other end connects the positive pole of power supply, makes whole wafer by epoxy encapsulation.Also referred to as led luminescence chip, be the core component of LED lamp, the P-N junction namely referred to.Its major function is: be luminous energy electric energy conversion, and the main material of chip is monocrystalline silicon.Semiconductor wafer is made up of two parts, and a part is P type semiconductor, and inside it, occupy an leading position in hole, and the other end is N type semiconductor, at this side mainly electronics.But time these two kinds of semiconductors couple together, between them, just form a P-N junction.When electric current acts on this wafer by wire time, electronics will be pushed to P district, and in P district, electronics is with hole-recombination, then will send energy with the form of photon, the principle of LED luminescence that Here it is.And the wavelength of light i.e. the color of light, be determined by the material forming P-N junction.Generally speaking, LED Making programme is divided into two large divisions: the epitaxial wafer first making gallium nitride (GaN) base on substrate, and this process mainly completes in metal organic chemical vapor deposition epitaxial wafer stove (MOCVD).After getting out to make material source needed for GaN base epitaxial wafer and various high-purity gas, just can progressively epitaxial wafer be carried out according to the requirement of technique.Conventional substrate mainly contains sapphire, carborundum and silicon substrate, also has the materials such as GaAs, AlN, ZnO.MOCVD utilizes the organic metal of vapor-phase reactant (predecessor) and III race and the NH3 of V race to react at substrate surface, by required product deposition at substrate surface.By control temperature, pressure, reactant concentration and kind ratio, thus control the quality such as film coating composition, crystalline phase.MOCVD epitaxy stove makes the most frequently used equipment of LED.Then be process two electrodes of LEDPN knot, electrode machining is also the critical process making LED chip, comprises cleaning, evaporation, gold-tinted, chemical etching, fusion, grinding; Then scribing, test and sorting are carried out to LED workprint, just can obtain required LED chip.As clean not in fruit chip cleaning, deposition system is abnormal, and evaporation metal level out (referring to the electrode after etching) can be caused to have and come off, metal level appearance color change, Jin Pao etc. are abnormal.Sometimes need in evaporate process to use spring clip fixed chip, therefore can produce catcher mark (must choose in visual inspection and remove).Gold-tinted job content comprises baking, upper photoresistance, photographic exposure, development etc., if development not exclusively and light shield have broken hole to have luminous zone is residual has more metal.Chip is in FEOL, and every technique all must use tweezers and the gaily decorated basket, carrier etc. as operations such as cleaning, evaporation, gold-tinted, chemical etching, fusion, grindings, therefore has chip electrode scratch situation and occurs.
Summary of the invention
A kind of LED chip production technology, it is characterized in that, its step comprises:
(1) clean
Adopt the support of Ultrasonic Cleaning LED, cleaning parameters is: ultrasonic vibration frequency 20000 hertz, and time 15-30min, dries after having cleaned;
(2) spread sheet
Adopt spread sheet machine to expand the film cohering chip, make the spacing of LED chip be stretched to 0.55-0.75mm, the operational factor of spread sheet machine is: operating air pressure 4Kg/cm2, temperature 25-100 DEG C, has expanded to carry out solid film process to LED chip afterwards;
(3) sheet is stung
Be placed in by LED chip on the fixture of thorn sheet platform, LED support is placed under fixture, stings on corresponding position one by one under the microscope with pin by LED chip;
(4) glue is put
Elargol on the point of the relevant position of LED support, its parameter is: Dian Jiaoliang 10-15mg/ unit, colloid height 0.15-0.27mm, some glue temperature 80-120 DEG C;
(5) standby glue
First elargol is coated in LED backplate with standby glue machine, standby glue amount is 2.5-3.3g/cm
2;
(6) shelve
First on LED support, put elargol, then pick up shift position with by LED chip, then be placed on corresponding backing positions;
(7) sinter
The temperature of elargol sintering controls at 140-160 DEG C, and sintering time is 1.5-2 hour;
(8) pressure welding
With spun gold welding machine by Electrode connection in LED die, to make the lead-in wire of pulse current injectingt, open welding machine carry out pressure welding, its pressure is 17-25KPa, pressure welding temperature 230 DEG C-240 DEG C;
(9) rubber seal dress is put
Epoxy support is selected to carry out a rubber seal dress to LED chip;
(10) solidify
Cure package epoxy, epoxy hardening conditions is at 120-135 DEG C, 1-1.5 hour;
(11) Post RDBMS
Carry out Post RDBMS after curing operation, allow epoxy fully solidify, carry out heat ageing simultaneously to LED, condition is 110-120 DEG C, 4-5 hour;
(12) muscle and scribing is cut
Adopt and cut company's muscle that muscle cuts off LED support, on a slice pcb board, carry out scribing machine to complete mask work;
(13) test
The photoelectric parameter of test LED, inspection overall dimension, carry out sorting according to customer requirement to LED product simultaneously;
(14) pack
Finished product is carried out counting packaging, be finished product;
Preferably, step (1) is dried and is adopted constant temperature drying, and temperature is 75 DEG C, and the time is 30min.
Preferably, carry out preheating to chip before step (2) spread sheet, preheat temperature is 50 DEG C.
Preferably, step (6) adopts wooden vacuum slot that LED chip is picked up shift position.
Preferably, carry out preheating before step (8) pressure welding, temperature is 220 DEG C.
Preferably, step (14) finished product packing adopts antistatic packaging.
Beneficial effect: the invention provides a kind of LED chip production technology, dry in the course of processing and adopt constant temperature drying, temperature is 75 DEG C, and the time is 30min, at such a temperature can moisture on rapid evaporation support, does not damage supporting structure simultaneously; Carry out preheating to chip before spread sheet, preheat temperature is 50 DEG C, and preheating can make chip structure soften, and is convenient to change shape in process of expansion; Adopt wooden vacuum slot that LED chip is picked up shift position, can scratch the current-diffusion layer of chip surface compared to steel mouth, wooden suction nozzle can prevent the damage to LED chip surface; Carry out preheating before pressure welding, temperature is 220 DEG C, and before pressure welding, butt welding machine carries out preheating, makes welding machine in pressure welding process can keep pressure welding temperature continuously; Finished product packing adopts antistatic packaging, and because the Circuits System in chip is easily subject to electrostatic interference, cause chip unstable, therefore antistatic packaging effectively can stop electrostatic interference.
Embodiment
The technological means realized for making the present invention, creation characteristic, reaching object and effect is easy to understand, below in conjunction with embodiment, setting forth the present invention further.
Embodiment 1:
A kind of LED chip production technology, it is characterized in that, its step comprises:
(1) clean
Adopt the support of Ultrasonic Cleaning LED, cleaning parameters is: ultrasonic vibration frequency 20000 hertz, and time 15min, dries after having cleaned, and dry and adopt constant temperature drying, temperature is 75 DEG C, and the time is 30min;
(2) spread sheet
Adopt spread sheet machine to expand the film cohering chip, carry out preheating to chip before spread sheet, preheat temperature is 50 DEG C, the spacing of LED chip is made to be stretched to 0.55mm, the operational factor of spread sheet machine is: operating air pressure 4Kg/cm2, temperature 25 DEG C, has expanded to carry out solid film process to LED chip afterwards;
(3) sheet is stung
Be placed in by LED chip on the fixture of thorn sheet platform, LED support is placed under fixture, stings on corresponding position one by one under the microscope with pin by LED chip;
(4) glue is put
Elargol on the point of the relevant position of LED support, its parameter is: Dian Jiaoliang 10mg/ unit, colloid height 0.15mm, some glue temperature 80 DEG C;
(5) standby glue
First elargol is coated in LED backplate with standby glue machine, standby glue amount is 2.5g/cm
2;
(6) shelve
First on LED support, put elargol, then adopt wooden vacuum slot that LED chip is picked up shift position, then be placed on corresponding backing positions;
(7) sinter
The temperature of elargol sintering controls at 140 DEG C, and sintering time is 1.5 hours;
(8) pressure welding
With spun gold welding machine by Electrode connection in LED die, to make the lead-in wire of pulse current injectingt, carry out preheating before pressure welding, temperature is 220 DEG C, open welding machine carry out pressure welding, its pressure is 17KPa, pressure welding temperature 230 DEG C;
(9) rubber seal dress is put
Epoxy support is selected to carry out a rubber seal dress to LED chip;
(10) solidify
Cure package epoxy, epoxy hardening conditions at 120 DEG C, 1 hour;
(11) Post RDBMS
Carry out Post RDBMS after curing operation, allow epoxy fully solidify, carry out heat ageing simultaneously to LED, condition is 110 DEG C, 4 hours;
(12) muscle and scribing is cut
Adopt and cut company's muscle that muscle cuts off LED support, on a slice pcb board, carry out scribing machine to complete mask work;
(13) test
The photoelectric parameter of test LED, inspection overall dimension, carry out sorting according to customer requirement to LED product simultaneously;
(14) pack
Finished product is adopted antistatic packaging, carries out counting packaging, be finished product;
Embodiment 2:
A kind of LED chip production technology, it is characterized in that, its step comprises:
(1) clean
Adopt the support of Ultrasonic Cleaning LED, cleaning parameters is: ultrasonic vibration frequency 20000 hertz, and time 25min, dries after having cleaned, and dry and adopt constant temperature drying, temperature is 75 DEG C, and the time is 30min;
(2) spread sheet
Adopt spread sheet machine to expand the film cohering chip, carry out preheating to chip before spread sheet, preheat temperature is 50 DEG C, the spacing of LED chip is made to be stretched to 0.60mm, the operational factor of spread sheet machine is: operating air pressure 4Kg/cm2, temperature 30 DEG C, has expanded to carry out solid film process to LED chip afterwards;
(3) sheet is stung
Be placed in by LED chip on the fixture of thorn sheet platform, LED support is placed under fixture, stings on corresponding position one by one under the microscope with pin by LED chip;
(4) glue is put
Elargol on the point of the relevant position of LED support, its parameter is: Dian Jiaoliang 12mg/ unit, colloid height 0.22mm, some glue temperature 100 DEG C;
(5) standby glue
First elargol is coated in LED backplate with standby glue machine, standby glue amount is 2.8g/cm
2;
(6) shelve
First on LED support, put elargol, then adopt wooden vacuum slot that LED chip is picked up shift position, then be placed on corresponding backing positions;
(7) sinter
The temperature of elargol sintering controls at 150 DEG C, and sintering time is 1.8 hours;
(8) pressure welding
With spun gold welding machine by Electrode connection in LED die, to make the lead-in wire of pulse current injectingt, carry out preheating before pressure welding, temperature is 220 DEG C, open welding machine carry out pressure welding, its pressure is 20KPa, pressure welding temperature 238 DEG C;
(9) rubber seal dress is put
Epoxy support is selected to carry out a rubber seal dress to LED chip;
(10) solidify
Cure package epoxy, epoxy hardening conditions at 132 DEG C, 1.5 hours;
(11) Post RDBMS
Carry out Post RDBMS after curing operation, allow epoxy fully solidify, carry out heat ageing simultaneously to LED, condition is 115 DEG C, 4.5 hours;
(12) muscle and scribing is cut
Adopt and cut company's muscle that muscle cuts off LED support, on a slice pcb board, carry out scribing machine to complete mask work;
(13) test
The photoelectric parameter of test LED, inspection overall dimension, carry out sorting according to customer requirement to LED product simultaneously;
(14) pack
Finished product is adopted antistatic packaging, carries out counting packaging, be finished product;
Embodiment 3:
A kind of LED chip production technology, it is characterized in that, its step comprises:
(1) clean
Adopt the support of Ultrasonic Cleaning LED, cleaning parameters is: ultrasonic vibration frequency 20000 hertz, and time 30min, dries after having cleaned, and dry and adopt constant temperature drying, temperature is 75 DEG C, and the time is 30min;
(2) spread sheet
Adopt spread sheet machine to expand the film cohering chip, carry out preheating to chip before spread sheet, preheat temperature is 50 DEG C, the spacing of LED chip is made to be stretched to 00.75mm, the operational factor of spread sheet machine is: operating air pressure 4Kg/cm2, temperature 45 C, has expanded to carry out solid film process to LED chip afterwards;
(3) sheet is stung
Be placed in by LED chip on the fixture of thorn sheet platform, LED support is placed under fixture, stings on corresponding position one by one under the microscope with pin by LED chip;
(4) glue is put
Elargol on the point of the relevant position of LED support, its parameter is: Dian Jiaoliang 15mg/ unit, colloid height 0.27mm, some glue temperature 120 DEG C;
(5) standby glue
First elargol is coated in LED backplate with standby glue machine, standby glue amount is 3.3g/cm
2;
(6) shelve
First on LED support, put elargol, then adopt wooden vacuum slot that LED chip is picked up shift position, then be placed on corresponding backing positions;
(7) sinter
The temperature of elargol sintering controls at 160 DEG C, and sintering time is 2 hours;
(8) pressure welding
With spun gold welding machine by Electrode connection in LED die, to make the lead-in wire of pulse current injectingt, carry out preheating before pressure welding, temperature is 220 DEG C, open welding machine carry out pressure welding, its pressure is 25KPa, pressure welding temperature 240 DEG C;
(9) rubber seal dress is put
Epoxy support is selected to carry out a rubber seal dress to LED chip;
(10) solidify
Cure package epoxy, epoxy hardening conditions at 135 DEG C, 1.5 hours;
(11) Post RDBMS
Carry out Post RDBMS after curing operation, allow epoxy fully solidify, carry out heat ageing simultaneously to LED, condition is 120 DEG C, 5 hours;
(12) muscle and scribing is cut
Adopt and cut company's muscle that muscle cuts off LED support, on a slice pcb board, carry out scribing machine to complete mask work;
(13) test
The photoelectric parameter of test LED, inspection overall dimension, carry out sorting according to customer requirement to LED product simultaneously;
(14) pack
Finished product is adopted antistatic packaging, carries out counting packaging, be finished product;
Can draw according to above table data, when implementing embodiment 2 parameter, its pockmark rate of the LED chip obtained is 0.5%, hole electrostatic capacity is more than or equal to 8500V, be less than or equal to 2.7mm with design point glue position deviation, useful life is 50 years, and the pockmark rate of prior art index is 1%, hole electrostatic capacity is more than or equal to 6000V, be less than or equal to 4.5mm with design point glue position deviation, useful life is 40 years, and in contrast LED chip pockmark rate of the present invention is low, antistatic effect is strong, point glue position deviation is little, and long service life, has superiority significantly.
The invention provides a kind of LED chip production technology, dry in the course of processing and adopt constant temperature drying, temperature is 75 DEG C, and the time is 30min, at such a temperature can moisture on rapid evaporation support, does not damage supporting structure simultaneously; Carry out preheating to chip before spread sheet, preheat temperature is 50 DEG C, and preheating can make chip structure soften, and is convenient to change shape in process of expansion; Adopt wooden vacuum slot that LED chip is picked up shift position, can scratch the current-diffusion layer of chip surface compared to steel mouth, wooden suction nozzle can prevent the damage to LED chip surface; Carry out preheating before pressure welding, temperature is 220 DEG C, and before pressure welding, butt welding machine carries out preheating, makes welding machine in pressure welding process can keep pressure welding temperature continuously; Finished product packing adopts antistatic packaging, and because the Circuits System in chip is easily subject to electrostatic interference, cause chip unstable, therefore antistatic packaging effectively can stop electrostatic interference.
The foregoing is only embodiments of the invention; not thereby the scope of the claims of the present invention is limited; every utilize description of the present invention to do equivalent structure or equivalent flow process conversion; or be directly or indirectly used in other relevant technical fields, be all in like manner included in scope of patent protection of the present invention.
Claims (6)
1. a LED chip production technology, is characterized in that, its step comprises:
(1) clean
Adopt the support of Ultrasonic Cleaning LED, cleaning parameters is: ultrasonic vibration frequency 20000 hertz, and time 15-30min, dries after having cleaned;
(2) spread sheet
Adopt spread sheet machine to expand the film cohering chip, make the spacing of LED chip be stretched to 0.55-0.75mm, the operational factor of spread sheet machine is: operating air pressure 4Kg/cm2, temperature 25-100 DEG C, has expanded to carry out solid film process to LED chip afterwards;
(3) sheet is stung
Be placed in by LED chip on the fixture of thorn sheet platform, LED support is placed under fixture, stings on corresponding position one by one under the microscope with pin by LED chip;
(4) glue is put
Elargol on the point of the relevant position of LED support, its parameter is: Dian Jiaoliang 10-15mg/ unit, colloid height 0.15-0.27mm, some glue temperature 80-120 DEG C;
(5) standby glue
First elargol is coated in LED backplate with standby glue machine, standby glue amount is 2.5-3.3g/cm
2;
(6) shelve
First on LED support, put elargol, then pick up shift position with by LED chip, then be placed on corresponding backing positions;
(7) sinter
The temperature of elargol sintering controls at 140-160 DEG C, and sintering time is 1.5-2 hour;
(8) pressure welding
With spun gold welding machine by Electrode connection in LED die, to make the lead-in wire of pulse current injectingt, open welding machine carry out pressure welding, its pressure is 17-25KPa, pressure welding temperature 230 DEG C-240 DEG C;
(9) rubber seal dress is put
Epoxy support is selected to carry out a rubber seal dress to LED chip;
(10) solidify
Cure package epoxy, epoxy hardening conditions is at 120-135 DEG C, 1-1.5 hour;
(11) Post RDBMS
Carry out Post RDBMS after curing operation, allow epoxy fully solidify, carry out heat ageing simultaneously to LED, condition is 110-120 DEG C, 4-5 hour;
(12) muscle and scribing is cut
Adopt and cut company's muscle that muscle cuts off LED support, on a slice pcb board, carry out scribing machine to complete mask work;
(13) test
The photoelectric parameter of test LED, inspection overall dimension, carry out sorting according to customer requirement to LED product simultaneously;
(14) pack
Finished product is carried out counting packaging, be finished product.
2. a LED chip production technology according to claim 1, is characterized in that, step (1) is dried and adopted constant temperature drying, and temperature is 75 DEG C, and the time is 30min.
3. a LED chip production technology according to claim 1, is characterized in that, carry out preheating to chip before step (2) spread sheet, preheat temperature is 50 DEG C.
4. a LED chip production technology according to claim 1, is characterized in that, step (6) adopts wooden vacuum slot that LED chip is picked up shift position.
5. a LED chip production technology according to claim 1, is characterized in that, carries out preheating before step (8) pressure welding, and temperature is 220 DEG C.
6. a LED chip production technology according to claim 1, is characterized in that, step (14) finished product packing adopts antistatic packaging.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510604440.2A CN105280799A (en) | 2015-09-21 | 2015-09-21 | LED chip production technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510604440.2A CN105280799A (en) | 2015-09-21 | 2015-09-21 | LED chip production technology |
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|---|---|
| CN105280799A true CN105280799A (en) | 2016-01-27 |
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|---|---|---|---|
| CN201510604440.2A Pending CN105280799A (en) | 2015-09-21 | 2015-09-21 | LED chip production technology |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107394031A (en) * | 2017-07-21 | 2017-11-24 | 东莞中之光电股份有限公司 | A kind of LED flip-chip packageds method |
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| CN103762298A (en) * | 2014-02-02 | 2014-04-30 | 芜湖市神龙新能源科技有限公司 | LED wafer combination package material and technology |
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2015
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| CN1949553A (en) * | 2006-11-23 | 2007-04-18 | 保定市宝新世纪路灯厂 | LED of sodium imitation light source and mfg. technique thereof |
| CN102593283A (en) * | 2012-03-01 | 2012-07-18 | 溧阳通亿能源科技有限公司 | High light-efficiency LED (light-emitting diode) packaging preparation method |
| CN103715329A (en) * | 2012-10-08 | 2014-04-09 | 深圳市子元技术有限公司 | High-power LED chip making method |
| CN103762298A (en) * | 2014-02-02 | 2014-04-30 | 芜湖市神龙新能源科技有限公司 | LED wafer combination package material and technology |
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| CN107394031A (en) * | 2017-07-21 | 2017-11-24 | 东莞中之光电股份有限公司 | A kind of LED flip-chip packageds method |
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