CN105280743A - Up-conversion luminescent structure capable of raising luminescence intensity and preparation method - Google Patents
Up-conversion luminescent structure capable of raising luminescence intensity and preparation method Download PDFInfo
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- CN105280743A CN105280743A CN201510838910.1A CN201510838910A CN105280743A CN 105280743 A CN105280743 A CN 105280743A CN 201510838910 A CN201510838910 A CN 201510838910A CN 105280743 A CN105280743 A CN 105280743A
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 72
- 238000004020 luminiscence type Methods 0.000 title claims abstract description 30
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 58
- 239000011787 zinc oxide Substances 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 229910052751 metal Inorganic materials 0.000 claims abstract description 26
- 239000002184 metal Substances 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 16
- 238000004544 sputter deposition Methods 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 13
- 238000004528 spin coating Methods 0.000 claims abstract description 13
- 238000000151 deposition Methods 0.000 claims abstract description 7
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052737 gold Inorganic materials 0.000 claims abstract description 4
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 4
- 239000010703 silicon Substances 0.000 claims abstract description 4
- 229910052709 silver Inorganic materials 0.000 claims abstract description 4
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 15
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 15
- 229960001296 zinc oxide Drugs 0.000 claims description 15
- 239000000843 powder Substances 0.000 claims description 12
- 238000003756 stirring Methods 0.000 claims description 12
- 238000007740 vapor deposition Methods 0.000 claims description 6
- -1 rare earth ion Chemical class 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 4
- 239000011159 matrix material Substances 0.000 claims description 4
- 229920000620 organic polymer Polymers 0.000 claims description 4
- 239000005357 flat glass Substances 0.000 claims description 3
- QBXVOLFMYZOYKI-UHFFFAOYSA-J potassium;lanthanum(3+);tetrafluoride Chemical compound [F-].[F-].[F-].[F-].[K+].[La+3] QBXVOLFMYZOYKI-UHFFFAOYSA-J 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 239000011521 glass Substances 0.000 abstract description 9
- 238000005516 engineering process Methods 0.000 abstract description 5
- 238000001755 magnetron sputter deposition Methods 0.000 abstract description 2
- HYXRNUXQERMPQH-UHFFFAOYSA-N [K].[La] Chemical compound [K].[La] HYXRNUXQERMPQH-UHFFFAOYSA-N 0.000 abstract 2
- 238000003682 fluorination reaction Methods 0.000 abstract 2
- 230000007704 transition Effects 0.000 abstract 1
- 238000007738 vacuum evaporation Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 58
- 229910052700 potassium Inorganic materials 0.000 description 14
- 239000011591 potassium Substances 0.000 description 14
- 239000010409 thin film Substances 0.000 description 14
- BYMUNNMMXKDFEZ-UHFFFAOYSA-K trifluorolanthanum Chemical compound F[La](F)F BYMUNNMMXKDFEZ-UHFFFAOYSA-K 0.000 description 14
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000004411 aluminium Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000001748 luminescence spectrum Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 238000005303 weighing Methods 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 230000000536 complexating effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 230000002687 intercalation Effects 0.000 description 1
- 238000009830 intercalation Methods 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/055—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7704—Halogenides
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
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- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
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- Y02E10/52—PV systems with concentrators
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Abstract
The invention discloses an up-conversion luminescent structure capable of raising luminescence intensity and a preparation method, wherein the structure comprises a substrate, a metal film layer, a dielectric layer and an up-conversion luminescent layer; the method comprises the steps of depositing Ag or Au on a piece of glass or silicon substrate by vacuum evaporation or direct current sputtering to form the metal film layer; then sputtering a layer of zinc oxide film by radio frequency magnetron sputtering; and finally spin coating a layer of fluorination lanthanum potassium doped with rare earth ion. According to the invention, the fluorination lanthanum potassium doped with rare earth ion is taken as the up-conversion luminescent material to enhance the luminescence intensity of the upper transition luminescent structure; and the thickness of the dielectric layer zinc oxide film is controlled to regulate and control the luminescence intensity of the up-conversion luminescent structure, therefore up-conversion luminescence intensity is enhanced. The up-conversion luminescent structure can be applied in biomedical science, luminescent devices and solar energy cell fields; the preparation technology is simple; the operation is easy and the application prospect is wide.
Description
Technical field
The invention belongs to up-conversion luminescent material technical field, be specifically related to a kind of can the upper conversion luminous structure improving luminous intensity and preparation method thereof.
Background technology
Up-conversion fluoride has a wide range of applications in fields such as biomedicine, luminescent device, solid state laser, solar cells, has become one of current study hotspot.At present, rare earth ion doped NaYF
4be considered to one of most potential luminescent material.The fluoride of current bibliographical information has rear-earth-doped NaYF
4, LiYF
4deng light-emitting film.KLaF
4(262cm
-1) tool compares NaYF
4(360cm
-1) lower phonon energy, therefore its film should have excellent upper conversion performance, but yet there are no KLaF
4the development report of film up-conversion luminescence performance.
In recent years, researcher finds that up-conversion luminescence film can improve fluorescence intensity by being coupled with precious metal material surface, and the dielectric layer of one deck printing opacity can be inserted between up-conversion and metallic film, by the thickness of control medium layer material, and then the luminous intensity of regulation and control film.Therefore KLaF is prepared
4film and adopt simple method to strengthen KLaF
4the Up-conversion Intensity of film, has important potential using value.
Summary of the invention
The object of the present invention is to provide a kind of can the upper conversion luminous structure improving luminous intensity and preparation method thereof, it is using rare earth ion doped lanthanum fluoride potassium as up-conversion luminescent material, to strengthen the luminous intensity of upper conversion luminous structure, and at metal film layer and up-conversion luminescence Intercalation reaction one dielectric layer, by controlling the luminous intensity of medium thickness and then regulation and control gained upper conversion luminous structure.
For achieving the above object, the present invention adopts following technical scheme:
Can improve a upper conversion luminous structure for luminous intensity, it is made up of substrate, metal film layer, dielectric layer and up-conversion luminescence layer, by controlling the thickness of dielectric layer, can realize regulation and control and the enhancing of luminous intensity.
Described substrate is sheet glass or silicon chip;
Described metal film layer is Ag thin layer or Au thin layer, and its thickness is 10 ~ 20nm;
Described dielectric layer is zinc-oxide film, and its thickness is 5 ~ 25nm;
Described up-conversion luminescence layer is that be dispersed in organic polymer matrix, be prepared from through spin coating, its thickness is 50 ~ 100nm with rare earth ion doped lanthanum fluoride potassium for up-conversion luminescent material.
The described preparation method that can improve the upper conversion luminous structure of luminous intensity, first on substrate, prepare layer of metal thin layer, then on metal film layer, prepare one dielectric layer, finally up-conversion luminescent material is prepared into solution, be evenly spun on obtained up-conversion luminescence layer on dielectric layer.
Described metal film layer adopts vacuum vapor deposition method or DC sputtering to be deposited on substrate Ag or Au to be prepared from.
Described dielectric layer adopts radio-frequency magnetron sputter method to sputter one deck zinc-oxide film on the substrate depositing metal film layer;
The process conditions of described radio-frequency magnetron sputter method are: adopt zinc-oxide ceramic target, background vacuum is less than 6 × 10
-4pa, target-substrate distance 75mm, argon gas flow are 60sccm, sputtering pressure is 0.5Pa, sputtering power is 100W;
The preparation method of described up-conversion luminescence layer comprises the following steps:
(1) polymethyl methacrylate (PMMA) powder 50mg is put into blender jar, add 4mL chloroformic solution and stir 30min, then add 30 ~ 50mg up-conversion luminescent material powder, continue to stir 24h, obtain transparent colloidal solution;
(2) gained colloidal solution is spin-coated on the substrate depositing dielectric layer and metal film layer and is prepared from;
The condition of described spin coating is: forward rotating speed 650rmp, time 12s; After to walk around fast 2000rmp, time 30s.
Up-conversion luminescence layer of the present invention is the up-conversion luminescence film of organo-mineral complexing, and it utilizes polymerization, by KLaF rear-earth-doped for upper conversion
4nanocrystalline being dispersed in organic polymer host matrix polymethyl methacrylate (PMMA) and form film, wherein rear-earth-doped KLaF
4percentage by weight is in the film 30 ~ 50%.
The present invention has following advantage relative to prior art:
The invention provides a kind of upper conversion luminous structure that can improve luminous intensity, it utilizes the surface plasma effect of metallic film, and is organically combined with noble metal by up-conversion, dielectric material, improves rare earth ion doped KLaF
4the Up-conversion Intensity of film; Simultaneously, the present invention by physical method as magnetron sputtering accurately controls the film thickness of dielectric layer, to realize regulation and control and the enhancing of luminous intensity, solve the problem that existing up-conversion luminous intensity is on the low side, and preparation technology is simple, cost is lower, has very strong practicality and application prospect widely.
Accompanying drawing explanation
Fig. 1 is the schematic diagram that the present invention can improve the upper conversion luminous structure of luminous intensity, wherein: 1 is up-conversion luminescence layer, and 2 is dielectric layer, and 3 is metal film layer, and 4 is substrate.
The SEM figure of up-conversion luminescence layer in Fig. 2 upper conversion luminous structure prepared by the present invention.
Fig. 3 is the up-conversion luminescence spectrum comparison diagram of Ag film/lanthanum fluoride potassium thin-film light emitting structure at 400 ~ 750nm wave band of embodiment 1 and embodiment 2 preparation.
Fig. 4 is the up-conversion luminescence spectrum comparison diagram of Au film/lanthanum fluoride potassium thin-film light emitting structure at 400 ~ 750nm wave band of embodiment 3 and embodiment 4 preparation.
Embodiment
A upper conversion luminous structure for luminous intensity can be improved, its with sheet glass or silicon chip for substrate; Ag or Au is metal film layer; Take zinc-oxide film as dielectric layer; By the six side phase KLaF that 10%Al adulterates
4: Yb
3+/ Er
3+nanocrystallinely be dispersed in organic polymer matrix PMMA, be prepared into up-conversion luminescence layer through spin coating; Be built up described upper conversion luminous structure successively; The thickness of described metal film layer is 10 ~ 20nm, and the thickness of dielectric layer is 5 ~ 25nm, and the thickness of up-conversion luminescence layer is 50 ~ 100nm, and its structural representation is shown in Fig. 1, and the SEM figure of its up-conversion luminescence layer is shown in Fig. 2.
More being convenient to make content of the present invention understand, below in conjunction with embodiment, technical solutions according to the invention are described further, but the present invention being not limited only to this.
embodiment 1 is not containing the Ag film/lanthanum fluoride potassium thin-film light emitting structure of ZnO dielectric layer
(1) weighing polymethyl methacrylate (PMMA) powder 50mg is positioned in blender jar, then adds 4mL chloroform solvent, stirs 30 minutes, then add 30 ~ 50mg and mix aluminium KLaF
4: Yb
3+/ Er
3+powder, continues to stir 24h, obtains transparent colloidal solution;
(2) clean common glass substrate and dry;
(3) utilize vacuum vapor deposition method plated metal Ag film on a glass substrate, thickness is about 10 ~ 20nm;
(4) spin-coating step (1) gained colloidal solution on Ag film, spincoating conditions is: forward rotating speed 650rmp, time 12s; After to walk around fast 2000rmp, time 30s;
(5) after film is dry, repeat the step of (4), obtain the up-conversion luminescence layer that thickness is 50 ~ 100nm.
embodiment 2 is containing the Ag film/lanthanum fluoride potassium thin-film light emitting structure of ZnO dielectric layer
(1) weighing polymethyl methacrylate (PMMA) powder 50mg is positioned in blender jar, then adds 4mL chloroform solvent, stirs 30 minutes, then add 30 ~ 50mg and mix aluminium KLaF
4: Yb
3+/ Er
3+powder, continues to stir 24h, obtains transparent colloidal solution;
(2) clean common glass substrate and dry;
(3) utilize vacuum vapor deposition method plated metal Ag film on a glass substrate, thickness is about 10 ~ 20nm;
(4) on metal A g film, adopt radio-frequency magnetron sputter method depositing zinc oxide, its sputtering technology condition is: adopt zinc-oxide ceramic target, background vacuum is less than 6 × 10
-4pa, target-substrate distance 75mm, Ar gas flow are 60sccm, sputtering pressure is 0.5Pa, sputtering power is 100W, and the zinc oxide films film thickness obtained is 5 ~ 25nm;
(5) spin-coating step (1) gained colloidal solution on zinc-oxide film, spincoating conditions is: forward rotating speed 650rmp, time 12s; After to walk around fast 2000rmp, time 30s;
(6) after film is dry, repeat the step of (5), obtain the up-conversion luminescence layer that thickness is 50 ~ 100nm.
Fig. 3 is the Ag film/lanthanum fluoride potassium thin-film light emitting structure not containing ZnO dielectric layer prepared by embodiment 1, the up-conversion luminescence spectrum comparison diagram of Ag film/lanthanum fluoride potassium thin-film light emitting structure at 400 ~ 750nm wave band containing ZnO dielectric layer prepared with embodiment 2.As seen from Figure 3, compared with not containing the Ag film/lanthanum fluoride potassium thin-film light emitting structure of ZnO dielectric layer, under 980nm wavelength excites, the Up-conversion Intensity of the Ag film/lanthanum fluoride potassium thin-film light emitting structure containing ZnO dielectric layer that embodiment 2 is obtained significantly improves, its green luminescence intensity improves 15 times, and red light-emitting intensity improves 10 times.
embodiment 3 is not containing the Au film/lanthanum fluoride potassium thin-film light emitting structure of ZnO dielectric layer
(1) weighing polymethyl methacrylate (PMMA) powder 50mg is positioned in blender jar, then adds 4mL chloroform solvent, stirs 30 minutes, then add 30 ~ 50mg and mix aluminium KLaF
4: Yb
3+/ Er
3+powder, continues to stir 24h, obtains transparent colloidal solution;
(2) clean common glass substrate and dry;
(3) utilize vacuum vapor deposition method plated metal Au film on a glass substrate, thickness is about 10 ~ 20nm;
(4) spin-coating step (1) gained colloidal solution on Au film, spincoating conditions is: forward rotating speed 650rmp, time 12s; After to walk around fast 2000rmp, time 30s;
(5) after film is dry, repeat the step of (4), obtain the up-conversion luminescence layer that thickness is 50 ~ 100nm.
embodiment 4 is containing the Au film/lanthanum fluoride potassium thin-film light emitting structure of ZnO dielectric layer
(1) weighing polymethyl methacrylate (PMMA) powder 50mg is positioned in blender jar, then adds 4mL chloroform solvent, stirs 30 minutes, then add 30 ~ 50mg and mix aluminium KLaF
4: Yb
3+/ Er
3+powder, continues to stir 24h, obtains transparent colloidal solution;
(2) clean common glass substrate and dry;
(3) utilize vacuum vapor deposition method plated metal Au film on a glass substrate, thickness is about 10 ~ 20nm;
(4) on metal A u film, adopt radio-frequency magnetron sputter method depositing zinc oxide, its sputtering technology condition is: adopt zinc-oxide ceramic target, background vacuum is less than 6 × 10
-4pa, target-substrate distance 75mm, Ar gas flow are 60sccm, sputtering pressure is 0.5Pa, sputtering power is 100W, and the thickness obtaining zinc-oxide film is 5 ~ 25nm;
(5) spin-coating step (1) gained colloidal solution on zinc-oxide film, its condition is: forward rotating speed 650rmp, time 12sec; After to walk around fast 2000rmp, time 30sec;
(6) after film is dry, repeat the step of (5), obtain the up-conversion luminescence layer that thickness is 50 ~ 100nm.
Fig. 4 is the Au film/lanthanum fluoride potassium thin-film light emitting structure not containing ZnO dielectric layer prepared by embodiment 3, the up-conversion luminescence spectrum comparison diagram of Au film/lanthanum fluoride potassium thin-film light emitting structure at 400 ~ 750nm wave band containing ZnO dielectric layer prepared with embodiment 4.As seen from Figure 4, compared with not containing the Au film/lanthanum fluoride potassium thin-film light emitting structure of ZnO dielectric layer, under 980nm wavelength excites, up-conversion luminescence efficiency containing the Au film/lanthanum fluoride potassium thin-film light emitting structure of ZnO dielectric layer significantly improves, green luminescence intensity improves 7.1 times, and red light-emitting intensity improves 7 times.
The foregoing is only preferred embodiment of the present invention, all equalizations done according to the present patent application the scope of the claims change and modify, and all should belong to covering scope of the present invention.
Claims (6)
1. can improve a upper conversion luminous structure for luminous intensity, it is characterized in that: described upper conversion luminous structure is made up of substrate, metal film layer, dielectric layer and up-conversion luminescence layer.
2. can improve the upper conversion luminous structure of luminous intensity according to claim 1, it is characterized in that: described substrate is sheet glass or silicon chip;
Described metal film layer is Ag thin layer or Au thin layer, and its thickness is 10 ~ 20nm;
Described dielectric layer is zinc-oxide film, and its thickness is 5 ~ 25nm;
Described up-conversion luminescence layer is that be dispersed in organic polymer matrix, be prepared from through spin coating, its thickness is 50 ~ 100nm with rare earth ion doped lanthanum fluoride potassium for up-conversion luminescent material.
3. one kind can be improved the preparation method of the upper conversion luminous structure of luminous intensity as claimed in claim 1, it is characterized in that: first on substrate, prepare layer of metal thin layer, then on metal film layer, one dielectric layer is prepared, finally up-conversion luminescent material is prepared into solution, is evenly spun on obtained up-conversion luminescence layer on dielectric layer.
4. can improve the preparation method of the upper conversion luminous structure of luminous intensity according to claim 3, it is characterized in that: described metal film layer adopts vacuum vapor deposition method or DC sputtering to be deposited on substrate Ag or Au to be prepared from.
5. can improve the preparation method of the upper conversion luminous structure of luminous intensity according to claim 3, it is characterized in that: described dielectric layer adopts radio-frequency magnetron sputter method to sputter one deck zinc-oxide film on the substrate depositing metal film layer;
The process conditions of described radio-frequency magnetron sputter method are: adopt zinc-oxide ceramic target, background vacuum is less than 6 × 10
-4pa, target-substrate distance 75mm, argon gas flow are 60sccm, sputtering pressure is 0.5Pa, sputtering power is 100W.
6. can improve the preparation method of the upper conversion luminous structure of luminous intensity according to claim 3, it is characterized in that: the preparation method of described up-conversion luminescence layer comprises the following steps:
(1) in polymethylmethacrylate powder, add chloroformic solution, stir 30min, then add up-conversion luminescent material powder, continue to stir 24h, obtain transparent colloidal solution;
(2) gained colloidal solution is spin-coated on the substrate depositing dielectric layer and metal film layer and is prepared from;
The weight ratio of polymethyl methacrylate used and up-conversion luminescent material is 1:0.6 ~ 1;
The condition of described spin coating is: forward rotating speed 650rmp, time 12s; After to walk around fast 2000rmp, time 30s.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109929203A (en) * | 2019-02-27 | 2019-06-25 | 南京航空航天大学 | A kind of preparation method of wavelength convert light-emitting film |
| CN110635047A (en) * | 2019-09-23 | 2019-12-31 | 吉林大学 | Photoelectric detector and preparation method thereof |
| CN111175895A (en) * | 2019-12-28 | 2020-05-19 | 中国船舶重工集团公司第七一七研究所 | Rare earth fluorescence enhanced antenna and preparation method thereof |
| CN112300800A (en) * | 2020-11-05 | 2021-02-02 | 福州大学 | Composite film material capable of controllably enhancing up-conversion red light emission and preparation method thereof |
| CN112723749A (en) * | 2021-03-03 | 2021-04-30 | 哈尔滨工程大学 | High-transparency microcrystalline glass containing scintillation nanocrystals and preparation method thereof |
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| CN110635047A (en) * | 2019-09-23 | 2019-12-31 | 吉林大学 | Photoelectric detector and preparation method thereof |
| CN111175895A (en) * | 2019-12-28 | 2020-05-19 | 中国船舶重工集团公司第七一七研究所 | Rare earth fluorescence enhanced antenna and preparation method thereof |
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| CN112723749A (en) * | 2021-03-03 | 2021-04-30 | 哈尔滨工程大学 | High-transparency microcrystalline glass containing scintillation nanocrystals and preparation method thereof |
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