CN103117361A - Organic semiconductor thin film solar cell preparation method based on nickel oxide anode interface layer - Google Patents
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Abstract
The invention discloses an organic semiconductor thin film solar cell preparation method based on a nickel oxide anode interface layer. The organic semiconductor thin film solar cell preparation method includes: placing nickel oxide block target materials and a transparent conductive substrate into a radio frequency magnetron sputtering device; sputtering in an argon atmosphere or an argon and oxygen mix atmosphere so as to obtain a transparent conductive substrate covered with nickel oxide film; then, mixing poly (3-hexylthiophene), [6,6]- phenyl-C61-methyl butyrate and chlorobenzene in an inert atmosphere, and stirring to obtain photosensitive coatings; coating the transparent conductive substrate covered with the nickel oxide film with the photosensitive coatings under the inert atmosphere; performing annealing treatment on the transparent conductive substrate so as to obtain a transparent conductive substrate covered with the nickel oxide film and photosensitive film in sequence; furthermore, using an electron beam evaporation method for lithium fluoride film and aluminum film evaporation on the surface of the transparent conductive substrate covered with the nickel oxide film and the photosensitive film in sequence; and finally, placing the transparent conductive substrate in the inert atmosphere to complete encapsulating and accordingly obtaining a target product. According to the organic semiconductor thin film solar cell preparation method based on the nickel oxide anode interface layer, production cost is low, and the nickel oxide film is large in area and good in quality.
Description
Technical field
The present invention relates to a kind of preparation method of solar cell, especially a kind of preparation method of the organic semiconductor thin-film solar cell based on nickel oxide anodic interface layer.
Background technology
At present, developing solar energy is one of effective means that solves energy crisis in world wide, and its major way has by photovoltaic effect makes solar energy be converted into electric energy.The silica-based solar cell of realizing this conversion process has entered suitability for industrialized production and commercial applications stage, but high due to the production cost that transforms device, energy consumption is large, can produce the defective such as heavy metal pollution and limited the further expansion of its application.For this reason, people are in order to address this problem, made unremitting effort, a kind of " the p-type semiconductor nickel oxide in the bulk-heterojunction solar cell as synergy anodic interface layer " announced on September 15th, 2010 as Chinese invention patent application CN 101836307 A.Mentioned the preparation method of the solar cell of the p-type semiconductor layer that is covered with successively NiO on a kind of transparency carrier by having ITO coating, active organic layer, lithium fluoride layer and aluminium negative electrode in this application for a patent for invention document, wherein, the formation of the p-type semiconductor layer of NiO adopts pulsed laser deposition technique to realize in oxygen atmosphere.Though the preparation method of this solar cell has avoided producing the defective of silica-based solar cell to a certain extent, the price that still exists high-power pulsed laser is more expensive, causes production cost to be difficult to the deficiency of reduction; And during the p-type semiconductor layer of pulsed laser deposition NiO, due to the skewness on the space after the vaporization of target material surface atom, and can not obtain the shortcoming of large-area even nickel oxide film.Simultaneously, the surface atom energy after the target vaporization also makes the difficult people's will to the greatest extent of quality of the nickel oxide film of formation less than 1eV.
Summary of the invention
The technical problem to be solved in the present invention is for overcoming deficiency of the prior art and shortcoming part, the preparation method based on the organic semiconductor thin-film solar cell of nickel oxide anodic interface layer who provides that a kind of rete area is large, production cost is low.
For solving technical problem of the present invention, the technical scheme that adopts is: the preparation method based on the organic semiconductor thin-film solar cell of nickel oxide anodic interface layer is making and the encapsulation of nickel oxide film, photosensitive film, lithium fluoride film and aluminium film, and particularly completing steps is as follows:
Step 1, first be placed in respectively on the indoor negative electrode of rf magnetron sputtering equipment vacuum nickel oxide block target and electrically conducting transparent substrate and sample stage, wherein, the spacing of nickel oxide block target and electrically conducting transparent substrate is 8～12cm, then treats the vacuum degree of vacuum chamber≤1 * 10
-4After Pa, vacuum chamber is under the argon atmospher or argon oxygen gas mixture atmosphere that pressure is 1～5Pa, sputter 5～30min obtains being covered with on it electrically conducting transparent substrate of nickel oxide film;
Step 2 is first the ratio of 0.9～1.1:0.7～0.9:98～102 according to weight ratio, will gather (3-hexyl thiophene) (P3HT), [6,6]-phenyl-C
61After-methyl butyrate (PCBM) and chlorobenzene mix in inert atmosphere, be placed in and stir 12h at least under 55～65 ℃, obtain photoactive coating, again after applying photoactive coating in the electrically conducting transparent substrate that is covered with thereon nickel oxide film under inert atmosphere, it is carried out annealing in process, obtain being covered with successively on it electrically conducting transparent substrate of nickel oxide film and photosensitive film;
Step 3, first to the electrically conducting transparent substrate that is covered with successively nickel oxide film and photosensitive film on it use electron-beam vapor deposition method in its surface successively evaporation thickness be that the lithium fluoride film of 0.5～2nm and thickness are the aluminium film of 100nm, be placed on and complete encapsulation in inert atmosphere, making the nickel oxide thickness is the organic semiconductor thin-film solar cell based on nickel oxide anodic interface layer of 5～50nm.
As the further improvement based on the preparation method of the organic semiconductor thin-film solar cell of nickel oxide anodic interface layer, described before sputter nickel oxide film in the electrically conducting transparent substrate, first it is dried up with nitrogen after acetone, ethanol and deionized water ultrasonic cleaning; Described electrically conducting transparent substrate is electro-conductive glass, or conductive film; Described argon oxygen gas mixture atmosphere is that volume ratio is the argon gas of 1:0.1～0.5 and the mist of oxygen; Sputtering power during described magnetron sputtering is 100～150W; Described coating is spin coating, and the rotating speed during spin coating is that 500～1500r/min, time are 60s; Temperature during described annealing in process is that 80～150 ℃, time are 5～60min; Vacuum degree when described evaporation lithium fluoride film and aluminium film≤1 * 10
-4Pa, evaporation rate is 0.1～1/s.
Beneficial effect with respect to prior art is, one, and the section of the nickel oxide film in the target product that the preparation method is made uses ESEM to characterize, and by its result as can be known, the structure of nickel oxide film is closely knit, even, and its thickness is 5～50nm.They are two years old, use respectively Infrared-Visible spectrometer and ellipsometer to characterize to the nickel oxide film in target product, its result shows, the optical band gap of nickel oxide film is about 3.8eV, its transmitance height very to visible light, the sunlight of the overwhelming majority can arrive photosensitive film layer through it undampedly.They are three years old, preparation method's science, effective: both because rectangular target magnetron sputtering technique in rf magnetron sputtering equipment can be realized the sputter of large area uniform film, and made the organic semiconductor thin-film solar cell based on nickel oxide anodic interface layer with large tracts of land nickel oxide film; Again because of rf magnetron sputtering by the energy of sputtered atom up to several eV, make it very good of the suprabasil quality of forming film of electrically conducting transparent, and then the quality of nickel oxide film be greatly improved; Also reduced widely production cost due to the good and cheap of rf magnetron sputtering equipment, the utmost point is beneficial to large-scale production and business-like the applying of target product; More target product is become possess the semiconductor thin-film solar cell of the high-efficiency long-life of chemical stability and high transmission rate because of the integration of rf magnetron sputtering, photoactive coating manufacturing technology.Simultaneously, though be conducive to the collection of charge carrier based on the anode of high work function, but the resistance because of nickel oxide self is larger, the increase of its thicknesses of layers will improve the series resistance of inside battery widely, therefore when making thicker nickel oxide film, be placed under argon oxygen gas mixture atmosphere and carry out, can reduce widely the series resistance of inside solar energy battery, improve the performance of battery.
As the further embodiment of beneficial effect, the one, be preferable in the electrically conducting transparent substrate before the sputter nickel oxide film, first it is dried up with nitrogen after acetone, ethanol and deionized water ultrasonic cleaning, be beneficial to and obtain and the compact nickel oxide film of electrically conducting transparent substrate.The 2nd, the electrically conducting transparent substrate is preferably electro-conductive glass, or conductive film, not only makes the source of electrically conducting transparent substrate than horn of plenty, preparation technology is more easily implemented and flexibly.The 3rd, it is the argon gas of 1:0.1～0.5 and the mist of oxygen that argon oxygen gas mixture atmosphere is preferably volume ratio, is beneficial to when rete is thicker, optimizes the oxygen doping to it, thereby reduces series resistance.The 4th, the sputtering power during magnetron sputtering is preferably 100～150W, is beneficial to the nickel oxide film that obtains higher quality.The 5th, coating is preferably spin coating, and the rotating speed during spin coating is preferably 500～1500r/min, time and is preferably 60s, and the temperature during annealing in process is preferably 80～150 ℃, time and is preferably 5～60min, has guaranteed the quality of photosensitive film.The 6th, the vacuum degree when evaporation lithium fluoride film and aluminium film is preferably≤and 1 * 10
-4Pa, evaporation rate is preferably 0.1～1/s, has guaranteed the quality of lithium fluoride film and aluminium film.
Description of drawings
Below in conjunction with accompanying drawing, optimal way of the present invention is described in further detail.
Fig. 1 is that the section of the nickel oxide film in the target product that the preparation method is made uses one of result that ESEM (SEM) characterizes.The SEM image has demonstrated pattern and the thickness of nickel oxide film.
Fig. 2 uses one of result that the Infrared-Visible spectrometer characterizes to the nickel oxide film in target product.By it as can be known, the optical band gap of nickel oxide film is about 3.8eV.
Fig. 3 uses ellipsometer to carry out one of characterization result of refractive index and the absorption coefficient of light to the nickel oxide film in target product.Can be found out by it, nickel oxide film is almost 0 at the absorption coefficient of visible light part.
Embodiment
At first buy from market or make with conventional method:
Acetone; Ethanol; Deionized water; Nitrogen; Electro-conductive glass and conductive film as the electrically conducting transparent substrate; The nickel oxide block; Argon gas; Volume ratio is the argon gas of 1:0.1～0.5 and the argon oxygen gas mixture of oxygen.
Then,
Embodiment 1
The concrete steps of preparation are:
Step 1 first dries up the electrically conducting transparent substrate after acetone, ethanol and deionized water ultrasonic cleaning with nitrogen; Wherein, the electrically conducting transparent substrate is conductive film.Be placed in respectively on the indoor negative electrode of rf magnetron sputtering equipment vacuum nickel oxide block target and electrically conducting transparent substrate and sample stage again; Wherein, the spacing of nickel oxide block target and electrically conducting transparent substrate is 8cm.Treat the vacuum degree of vacuum chamber≤1 * 10
-4After Pa, vacuum chamber is under the argon atmospher that pressure is 5Pa, sputter 5min; Wherein, sputtering power is 150W, obtains being covered with on it electrically conducting transparent substrate that is similar to nickel oxide film shown in Figure 1.
Step 2 is first the ratio of 0.9:0.9:98 according to weight ratio, will gather (3-hexyl thiophene), [6,6]-phenyl-C
61-methyl butyrate and chlorobenzene are placed under 55 ℃ and stir 16h after mixing in inert atmosphere, obtain photoactive coating.After applying photoactive coating in the electrically conducting transparent substrate that is covered with thereon nickel oxide film under inert atmosphere, it is carried out annealing in process again; Wherein, apply and be that spin coating, the rotating speed during spin coating are that 500r/min, time are 60s, the temperature during annealing in process is that 80 ℃, time are 60min, obtains being covered with successively on it electrically conducting transparent substrate of nickel oxide film and photosensitive film.
Step 3, first to the electrically conducting transparent substrate that is covered with successively nickel oxide film and photosensitive film on it use electron-beam vapor deposition method in its surface successively evaporation thickness be the lithium fluoride film of 0.5nm and the thickness aluminium film as 100nm; Wherein, the vacuum degree when evaporation lithium fluoride film and aluminium film≤1 * 10
-4Pa, evaporation rate is 0.1/s.Be placed on again and complete encapsulation in inert atmosphere, make the organic semiconductor thin-film solar cell based on nickel oxide anodic interface layer of the test curve that has in Fig. 2 and Fig. 3.
Embodiment 2
The concrete steps of preparation are:
Step 1 first dries up the electrically conducting transparent substrate after acetone, ethanol and deionized water ultrasonic cleaning with nitrogen; Wherein, the electrically conducting transparent substrate is conductive film.Be placed in respectively on the indoor negative electrode of rf magnetron sputtering equipment vacuum nickel oxide block target and electrically conducting transparent substrate and sample stage again; Wherein, the spacing of nickel oxide block target and electrically conducting transparent substrate is 9cm.Treat the vacuum degree of vacuum chamber≤1 * 10
-4After Pa, vacuum chamber is under the argon atmospher that pressure is 4Pa, sputter 11min; Wherein, sputtering power is 138W, obtains being covered with on it electrically conducting transparent substrate that is similar to nickel oxide film shown in Figure 1.
Step 2 is first the ratio of 0.95:0.85:99 according to weight ratio, will gather (3-hexyl thiophene), [6,6]-phenyl-C
61-methyl butyrate and chlorobenzene are placed under 58 ℃ and stir 15h after mixing in inert atmosphere, obtain photoactive coating.After applying photoactive coating in the electrically conducting transparent substrate that is covered with thereon nickel oxide film under inert atmosphere, it is carried out annealing in process again; Wherein, apply and be that spin coating, the rotating speed during spin coating are that 750r/min, time are 60s, the temperature during annealing in process is that 98 ℃, time are 46min, obtains being covered with successively on it electrically conducting transparent substrate of nickel oxide film and photosensitive film.
Step 3, first to the electrically conducting transparent substrate that is covered with successively nickel oxide film and photosensitive film on it use electron-beam vapor deposition method in its surface successively evaporation thickness be the lithium fluoride film of 0.86nm and the thickness aluminium film as 100nm; Wherein, the vacuum degree when evaporation lithium fluoride film and aluminium film≤1 * 10
-4Pa, evaporation rate is 0.3/s.Be placed on again and complete encapsulation in inert atmosphere, make the organic semiconductor thin-film solar cell based on nickel oxide anodic interface layer of the test curve that has in Fig. 2 and Fig. 3.
Embodiment 3
The concrete steps of preparation are:
Step 1 first dries up the electrically conducting transparent substrate after acetone, ethanol and deionized water ultrasonic cleaning with nitrogen; Wherein, the electrically conducting transparent substrate is conductive film.Be placed in respectively on the indoor negative electrode of rf magnetron sputtering equipment vacuum nickel oxide block target and electrically conducting transparent substrate and sample stage again; Wherein, the spacing of nickel oxide block target and electrically conducting transparent substrate is 10cm.Treat the vacuum degree of vacuum chamber≤1 * 10
-4After Pa, vacuum chamber is under the argon atmospher that pressure is 3Pa, sputter 17min; Wherein, sputtering power is 125W, obtains being covered with on it electrically conducting transparent substrate that is similar to nickel oxide film shown in Figure 1.
Step 2 is first the ratio of 1:0.8:100 according to weight ratio, will gather (3-hexyl thiophene), [6,6]-phenyl-C
61-methyl butyrate and chlorobenzene are placed under 60 ℃ and stir 14h after mixing in inert atmosphere, obtain photoactive coating.After applying photoactive coating in the electrically conducting transparent substrate that is covered with thereon nickel oxide film under inert atmosphere, it is carried out annealing in process again; Wherein, apply and be that spin coating, the rotating speed during spin coating are that 1000r/min, time are 60s, the temperature during annealing in process is that 115 ℃, time are 33min, obtains being covered with successively on it electrically conducting transparent substrate of nickel oxide film and photosensitive film.
Step 3, first to the electrically conducting transparent substrate that is covered with successively nickel oxide film and photosensitive film on it use electron-beam vapor deposition method in its surface successively evaporation thickness be the lithium fluoride film of 1.25nm and the thickness aluminium film as 100nm; Wherein, the vacuum degree when evaporation lithium fluoride film and aluminium film≤1 * 10
-4Pa, evaporation rate is 0.5/s.Be placed on again and complete encapsulation in inert atmosphere, make the organic semiconductor thin-film solar cell based on nickel oxide anodic interface layer of the test curve that has in Fig. 2 and Fig. 3.
Embodiment 4
The concrete steps of preparation are:
Step 1 first dries up the electrically conducting transparent substrate after acetone, ethanol and deionized water ultrasonic cleaning with nitrogen; Wherein, the electrically conducting transparent substrate is conductive film.Be placed in respectively on the indoor negative electrode of rf magnetron sputtering equipment vacuum nickel oxide block target and electrically conducting transparent substrate and sample stage again; Wherein, the spacing of nickel oxide block target and electrically conducting transparent substrate is 11cm.Treat the vacuum degree of vacuum chamber≤1 * 10
-4After Pa, vacuum chamber is under the argon atmospher that pressure is 2Pa, sputter 23min; Wherein, sputtering power is 113W, obtains being covered with on it electrically conducting transparent substrate that is similar to nickel oxide film shown in Figure 1.
Step 2 is first the ratio of 1.05:0.75:101 according to weight ratio, will gather (3-hexyl thiophene), [6,6]-phenyl-C
61-methyl butyrate and chlorobenzene are placed under 63 ℃ and stir 13h after mixing in inert atmosphere, obtain photoactive coating.After applying photoactive coating in the electrically conducting transparent substrate that is covered with thereon nickel oxide film under inert atmosphere, it is carried out annealing in process again; Wherein, apply and be that spin coating, the rotating speed during spin coating are that 1250r/min, time are 60s, the temperature during annealing in process is that 133 ℃, time are 19min, obtains being covered with successively on it electrically conducting transparent substrate of nickel oxide film and photosensitive film.
Step 3, first to the electrically conducting transparent substrate that is covered with successively nickel oxide film and photosensitive film on it use electron-beam vapor deposition method in its surface successively evaporation thickness be the lithium fluoride film of 1.61nm and the thickness aluminium film as 100nm; Wherein, the vacuum degree when evaporation lithium fluoride film and aluminium film≤1 * 10
-4Pa, evaporation rate is 0.7/s.Be placed on again and complete encapsulation in inert atmosphere, make the organic semiconductor thin-film solar cell based on nickel oxide anodic interface layer of the test curve that has in Fig. 2 and Fig. 3.
Embodiment 5
The concrete steps of preparation are:
Step 1 first dries up the electrically conducting transparent substrate after acetone, ethanol and deionized water ultrasonic cleaning with nitrogen; Wherein, the electrically conducting transparent substrate is conductive film.Be placed in respectively on the indoor negative electrode of rf magnetron sputtering equipment vacuum nickel oxide block target and electrically conducting transparent substrate and sample stage again; Wherein, the spacing of nickel oxide block target and electrically conducting transparent substrate is 12cm.Treat the vacuum degree of vacuum chamber≤1 * 10
-4After Pa, vacuum chamber is under the argon atmospher that pressure is 1Pa, sputter 30min; Wherein, sputtering power is 100W, obtains being covered with on it electrically conducting transparent substrate of nickel oxide film as shown in Figure 1.
Step 2 is first the ratio of 1.1:0.7:102 according to weight ratio, will gather (3-hexyl thiophene), [6,6]-phenyl-C
61-methyl butyrate and chlorobenzene are placed under 65 ℃ and stir 12h after mixing in inert atmosphere, obtain photoactive coating.After applying photoactive coating in the electrically conducting transparent substrate that is covered with thereon nickel oxide film under inert atmosphere, it is carried out annealing in process again; Wherein, apply and be that spin coating, the rotating speed during spin coating are that 1500r/min, time are 60s, the temperature during annealing in process is that 150 ℃, time are 5min, obtains being covered with successively on it electrically conducting transparent substrate of nickel oxide film and photosensitive film.
Step 3, first to the electrically conducting transparent substrate that is covered with successively nickel oxide film and photosensitive film on it use electron-beam vapor deposition method in its surface successively evaporation thickness be the lithium fluoride film of 2nm and the thickness aluminium film as 100nm; Wherein, the vacuum degree when evaporation lithium fluoride film and aluminium film≤1 * 10
-4Pa, evaporation rate is 1/s.Be placed on again and complete encapsulation in inert atmosphere, make the organic semiconductor thin-film solar cell based on nickel oxide anodic interface layer of the test curve that has in Fig. 2 and Fig. 3.
Select respectively again electro-conductive glass or conductive film as the electrically conducting transparent substrate, and be the argon gas of 1:0.1～0.5 and the mist of oxygen as the volume ratio of argon oxygen gas mixture atmosphere, repeat above-described embodiment 1～5, made equally the organic semiconductor thin-film solar cell based on nickel oxide anodic interface layer of the test curve that has in Fig. 2 and Fig. 3.
Obviously, those skilled in the art can carry out various changes and modification and not break away from the spirit and scope of the present invention to the preparation method of the organic semiconductor thin-film solar cell based on nickel oxide anodic interface layer of the present invention.Like this, if of the present invention these are revised and within modification belongs to the scope of claim of the present invention and equivalent technologies thereof, the present invention also is intended to comprise these changes and modification interior.
Claims (8)
1. preparation method based on the organic semiconductor thin-film solar cell of nickel oxide anodic interface layer, it is making and the encapsulation of nickel oxide film, photosensitive film, lithium fluoride film and aluminium film, it is characterized in that completing steps is as follows:
Step 1, first be placed in respectively on the indoor negative electrode of rf magnetron sputtering equipment vacuum nickel oxide block target and electrically conducting transparent substrate and sample stage, wherein, the spacing of nickel oxide block target and electrically conducting transparent substrate is 8～12cm, then treats the vacuum degree of vacuum chamber≤1 * 10
-4After Pa, vacuum chamber is under the argon atmospher or argon oxygen gas mixture atmosphere that pressure is 1～5Pa, sputter 5～30min obtains being covered with on it electrically conducting transparent substrate of nickel oxide film;
Step 2 is first the ratio of 0.9～1.1:0.7～0.9:98～102 according to weight ratio, will gather (3-hexyl thiophene), [6,6]-phenyl-C
61After-methyl butyrate and chlorobenzene mix in inert atmosphere, be placed in and stir 12h at least under 55～65 ℃, obtain photoactive coating, again after applying photoactive coating in the electrically conducting transparent substrate that is covered with thereon nickel oxide film under inert atmosphere, it is carried out annealing in process, obtain being covered with successively on it electrically conducting transparent substrate of nickel oxide film and photosensitive film;
Step 3, first to the electrically conducting transparent substrate that is covered with successively nickel oxide film and photosensitive film on it use electron-beam vapor deposition method in its surface successively evaporation thickness be that the lithium fluoride film of 0.5～2nm and thickness are the aluminium film of 100nm, be placed on and complete encapsulation in inert atmosphere, making the nickel oxide thickness is the organic semiconductor thin-film solar cell based on nickel oxide anodic interface layer of 5～50nm.
2. the preparation method of the organic semiconductor thin-film solar cell based on nickel oxide anodic interface layer according to claim 1, it is characterized in that before sputter nickel oxide film in the electrically conducting transparent substrate, first it is dried up with nitrogen after acetone, ethanol and deionized water ultrasonic cleaning.
3. the preparation method of the organic semiconductor thin-film solar cell based on nickel oxide anodic interface layer according to claim 1, is characterized in that the electrically conducting transparent substrate is electro-conductive glass, or conductive film.
4. the preparation method of the organic semiconductor thin-film solar cell based on nickel oxide anodic interface layer according to claim 1, is characterized in that argon oxygen gas mixture atmosphere is that volume ratio is the argon gas of 1:0.1～0.5 and the mist of oxygen.
5. the preparation method of the organic semiconductor thin-film solar cell based on nickel oxide anodic interface layer according to claim 1, the sputtering power when it is characterized in that magnetron sputtering is 100～150W.
6. the preparation method of the organic semiconductor thin-film solar cell based on nickel oxide anodic interface layer according to claim 1, is characterized in that coating is spin coating, and the rotating speed during spin coating is that 500～1500r/min, time are 60s.
7. the preparation method of the organic semiconductor thin-film solar cell based on nickel oxide anodic interface layer according to claim 1, the temperature when it is characterized in that annealing in process are that 80～150 ℃, time are 5～60min.
8. the preparation method of the organic semiconductor thin-film solar cell based on nickel oxide anodic interface layer according to claim 1, the vacuum degree when it is characterized in that evaporation lithium fluoride film and aluminium film≤1 * 10
-4Pa, evaporation rate is 0.1～1/s.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107460438A (en) * | 2017-07-04 | 2017-12-12 | 北京化工大学 | A kind of method that the super flat NiO films of large area are prepared based on vapour deposition process |
| CN112683961A (en) * | 2020-12-02 | 2021-04-20 | 赛莱克斯微系统科技（北京）有限公司 | Gas sensor and method for manufacturing gas-sensitive film thereof |
| CN115745418A (en) * | 2022-11-23 | 2023-03-07 | 中国科学院宁波材料技术与工程研究所 | Quick-response nickel oxide electrochromic film and preparation method and application thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101836307A (en) * | 2007-08-17 | 2010-09-15 | 西北大学 | P N-type semiconductor N nickel oxide in body phase heterojunction solar battery as synergy anodic interface layer |
| CN102437210A (en) * | 2011-11-30 | 2012-05-02 | 吉林大学 | Full-inorganic oxide high-efficiency quantum dot solar battery and manufacturing method thereof |
| US20120292595A1 (en) * | 2005-02-16 | 2012-11-22 | Bawendi Moungi G | Light emitting device including semiconductor nanocrystals |
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2013
- 2013-02-28 CN CN2013100624072A patent/CN103117361A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120292595A1 (en) * | 2005-02-16 | 2012-11-22 | Bawendi Moungi G | Light emitting device including semiconductor nanocrystals |
| CN101836307A (en) * | 2007-08-17 | 2010-09-15 | 西北大学 | P N-type semiconductor N nickel oxide in body phase heterojunction solar battery as synergy anodic interface layer |
| CN102437210A (en) * | 2011-11-30 | 2012-05-02 | 吉林大学 | Full-inorganic oxide high-efficiency quantum dot solar battery and manufacturing method thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107460438A (en) * | 2017-07-04 | 2017-12-12 | 北京化工大学 | A kind of method that the super flat NiO films of large area are prepared based on vapour deposition process |
| CN112683961A (en) * | 2020-12-02 | 2021-04-20 | 赛莱克斯微系统科技（北京）有限公司 | Gas sensor and method for manufacturing gas-sensitive film thereof |
| CN115745418A (en) * | 2022-11-23 | 2023-03-07 | 中国科学院宁波材料技术与工程研究所 | Quick-response nickel oxide electrochromic film and preparation method and application thereof |
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Application publication date: 20130522 |