CN105277865A - Semiconductor test device - Google Patents
Semiconductor test device Download PDFInfo
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- CN105277865A CN105277865A CN201510279158.1A CN201510279158A CN105277865A CN 105277865 A CN105277865 A CN 105277865A CN 201510279158 A CN201510279158 A CN 201510279158A CN 105277865 A CN105277865 A CN 105277865A
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Abstract
The present invention provides a semiconductor test device capable of replacing a damaged auxiliary component within a short time and capable of achieving low cost for replacement of the auxiliary component. The semiconductor test device (100) comprises: a DC power supply (1), a first auxiliary component (2) of an upper bridge arm, a second auxiliary component (3) connected in series with the first auxiliary component (2), a load coil (4) serving as an inductive load, a first switch (5), a second switch (6) and a third switch (7) serving as switchgears, and an assembling rack (8) capable of configuring Devices Under Test (DUT) and the second auxiliary component (3). The assembling rack (8) is easy to assemble and disassemble relative to the semiconductor test device.
Description
Technical field
The present invention relates to a kind of semiconductor test instruments can tested switching characteristic and reverse recovery characteristic etc.
Background technology
Fig. 5 A and Fig. 5 B is the circuit diagram of semiconductor device 50, and Fig. 5 A is the basic circuit pie graph of the IGBT module 51 of two-in-one (2in1), and Fig. 5 B is the basic circuit pie graph of the IGBT module 52 of a unification (1in1).Below, two-in-one IGBT module is designated as two-in-one module, the IGBT module that unifies is designated as a unification module.
In fig. 5, in connection, the collector terminal C2 of the emitter terminal E1 of the IGBT53 of brachium pontis and the IGBT54 of lower brachium pontis forms series circuit, draws main circuit terminal at C1 and E2, draws lead-out terminal from the connecting portion of E1 and C2.Further, IGBT53,54 and FWD55,56 reverse parallel connections.Reverse parallel connection refers to as making the direction of principal current mutually in the connection arranged side by side carried out in the other direction.In figure, G1, G2 of symbol is gate terminal.
In this Fig. 5 B, be connected to negative electrode and the anode of FWD58 at the emitter terminal E of IGBT57 and collector terminal C.In figure, the G of symbol is gate terminal.
Fig. 6 is the circuit diagram of semiconductor test instruments 500.At this, formed two-in-one module with auxiliary element 61 and test element DUT.
Direct supply 62 is with the collector terminal C1 of the IGBT63 of the auxiliary element 61 as upper brachium pontis and be connected as the emitter terminal E2 of the IGBT64 of the test element DUT of lower brachium pontis.One end 91 of loading coil 65 is connected with the connecting portion 66 of E1 and C2, and the other end 92 is connected with the first switch 67 and second switch 68.IGBT63,64 gate terminal, emitter terminal be connected with grid signal circuit 69,70 respectively.
By to IGBT63,64 gate terminal G1, G2 apply from grid signal circuit 69,70 signal respectively, thus make IGBT63,64 respective collector, between emitter generation action conduct (ON) to produce, turn off (OFF).
By closing the first switch 67 and opening second switch 68, carry out the switch test of the IGBT64 of lower brachium pontis.Meanwhile, the FWD71 of upper brachium pontis becomes Reverse recovery pattern.Further, by opening the first switch 67 and closed second switch 68, the reverse recovery characteristic test of the FWD72 of lower brachium pontis is carried out.Meanwhile, the IGBT63 of upper brachium pontis becomes switch motion pattern.
So, by switching signal and the first switch 67, second switch 68, the test of IGBT64 and/or FWD72 as test element DUT is carried out.Now, also apply from the back flow current of loading coil 65 and/or the voltage by test generation to IGBT63 or FWD71 as auxiliary element 61.
Fig. 7 A and Fig. 7 B is key diagram when carrying out switch test as the IGBT64 of test element DUT, and Fig. 7 A is circuit diagram, and Fig. 7 B is movement oscillogram.
First, in test, apply the pick-off signal from grid signal circuit 69 at the G1 of IGBT63, maintain cut-off state.At closed first switch 67 of t0.
Next, the IGBT64 conducting as test element DUT is made at t1.Thus, electric current I 1 is flow through.This electric current I 1, from the positive pole of direct supply 62, by the first switch 67, loading coil 65, IGBT64, flows to the negative pole of direct supply 62.
Next, at t2, IGBT64 is ended.Thus, loading coil 65 is flowed through, as the FWD71 of auxiliary element 61, the back flow current I2 of the first switch 67.
Next, when again making IGBT64 conducting at t3, electric current I 31 is from the positive pole of direct supply 62, by FWD71, IGBT64 of having back flow current I2 to flow, negative pole to direct supply 62 flows, and electric current I 32 is by the first switch 67, loading coil 65, IGBT64, and the negative pole to direct supply 62 flows.At this moment conducting (turnon) test of IGBT64 is carried out.Irr shown in figure is the reverse recovery current of FWD71.
Next, when making IGBT64 end at t4, again flow through by the back flow current I4 of loading coil 65, FWD71, the first switch 67.At this moment, the shutoff test of IGBT64 is carried out.Due to loading coil 65 and/or wiring resistance, back flow current I4 decays and disappears.After back flow current I4 disappears, the switch test opening the first switch 67, IGBT64 terminates.
Next, the reverse recovery characteristic test for FWD72 is described.
Should illustrate, when test element DUT is single IGBT, the IGBT replacing with other proceeds test.
Key diagram when Fig. 8 A and Fig. 8 B is the reverse recovery characteristic test carrying out FWD, Fig. 8 A is circuit diagram, and Fig. 8 B is movement oscillogram.
First, in test, apply the pick-off signal from grid signal circuit 70 at the G2 of IGBT64, maintain cut-off state.At t0 closed second switch 68.The IGBT63 conducting as auxiliary element 61 is made at t1.Thus, electric current I 1, from the positive pole of direct supply 62, by IGBT63, loading coil 65, second switch 68, flows to the negative pole of direct supply 62.
Next, at t2, IGBT63 is ended.Thus, loading coil 65, second switch 68, back flow current I2 as the FWD72 of test element DUT is flowed through.
Next, when making IGBT63 conducting at t3, electric current is flow through at FWD72 with the path of I31.This process becomes the reverse recovery characteristic test of FWD72.As previously mentioned, Irr is the reverse recovery current of FWD72.In the reversely restoring process of FWD72 and after Reverse recovery, electric current I 32, from the positive pole of direct supply 62, by IGBT63, loading coil 65, second switch 68, flows to the negative pole of direct supply 62.
Next, end IGBT63 at t4, in loading coil 65, second switch 68, FWD72, again flow through back flow current I4.After this back flow current I4 decays and disappears, open the reverse recovery characteristic off-test of second switch 68, FWD72.Next, switching tests element DUT, carries out switch test and reverse recovery characteristic test.As DUT, also can be single diode but not module.
Test when carrying out the reverse recovery characteristic as the FWD71 of auxiliary element 61 in above-mentioned switch test, and when carrying out the switch test as the IGBT63 of auxiliary element 61 in the test of above-mentioned reverse recovery characteristic, can carry out forming the FWD71 of the two-in-one IGBT63 of upper and lower bridge arm, the switch test of 64 and upper and lower bridge arm, the reverse recovery characteristic test of 72.That is, by using the auxiliary element 61 of upper brachium pontis as DUT process, using the DUT of lower brachium pontis as auxiliary element process, only switch the first switch 67, second switch 68, just can carry out the test of two aspects.
Fig. 9 is the circuit diagram of the semiconductor test instruments 600 being formed the auxiliary element 75 of upper brachium pontis with three of parallel connection IGBT76 and three FWD77.
At the circuit of Fig. 6, when DUT be unacceptable product and/or damage time, have the situation auxiliary element 75 of upper brachium pontis being applied to voltage on test condition, electric current.At semiconductor test instruments 600, auxiliary element 75 is made up of multiple IGBT and multiple FWD, can stand above-mentioned situation.Thus, be designed to allow enough large withstand voltage and electric current compared with DUT.Therefore, this semiconductor test instruments 600 can be used in the test of the high withstand voltage DUT of big current.Auxiliary element 75 configures and is fixed on semiconductor test instruments 600 body interior.
Further, in patent documentation 1 and patent documentation 2, similar test unit is also disclosed.
Prior art document
Patent documentation
Patent documentation 1: Japanese Unexamined Patent Publication 9-21844 publication
Patent documentation 2: Japanese Unexamined Patent Publication 10-197594 publication
Summary of the invention
Technical matters
In the semiconductor test instruments 600 shown in Fig. 9, in formation the auxiliary element 75 of brachium pontis IGBT76 and with the FWD77 of IGBT76 reverse parallel connection respectively be laterally arranged in parallel with multiple, and electrically in parallel.But due to laterally configuration side by side, the length of arrangement wire between each IGBT76 and each FWD77 and DUT of upper brachium pontis produces difference.The difference of this length of arrangement wire becomes the difference of wiring inductance L, and due to this reason, the voltage applied between the IGBT76 of upper brachium pontis or between FWD77 and/or the electric current etc. flowing through them produce uneven.
Particularly when DUT damages, this imbalance becomes large, IGBT76 and/or FWD77 of brachium pontis likely can be made to damage.
Further, because multiple IGBT76 and FWD77 of the upper brachium pontis as auxiliary element 75 are fixed in semiconductor test instruments 600 main body, so when auxiliary element 75 damages, exchanging auxiliary element 75 will expend time in.And, owing to can be carried out the test of such as switch test and/or reverse recovery characteristic test etc. to multiple semiconductor device by a semiconductor test instruments 600, multiple IGBT76 and FWD77 of above brachium pontis use the semiconductor element of the high price of high withstand voltage, big current specification, when damaged, clearing expense uprises.
Further, when not damaging about auxiliary element in patent documentation 1 and patent documentation 2, in the record that the short time exchanges the auxiliary element damaged with cheap price.
The object of the invention is to solve above-mentioned problem, providing a kind of can exchange the auxiliary element damaged in the short time, and can make the semiconductor test instruments that the clearing expense of auxiliary element is cheap.
Technical scheme
In order to achieve the above object, a kind of semiconductor test instruments is provided, possesses: direct supply; First auxiliary element, hot side is connected with the positive pole of above-mentioned direct supply; Assembly fixture, the first test element of being connected with the negative pole of above-mentioned direct supply of storage low potential side, to be connected with the low potential side of above-mentioned first auxiliary element with hot side and the second auxiliary element of being connected with the hot side of above-mentioned first test element of low potential side; Inductive load, one end is connected with the hot side of above-mentioned first test element; First derailing switch, one end is connected with the other end of above-mentioned inductive load, and the other end is connected with the negative pole of above-mentioned direct supply; Second switch device, one end is connected with the other end of above-mentioned inductive load, and the other end is connected with the low potential side of above-mentioned first auxiliary element; 3rd derailing switch, one end is connected with the other end of above-mentioned inductive load, and the other end is connected with the positive pole of above-mentioned direct supply, and wherein, above-mentioned assembly fixture can load and unload relative to above-mentioned semiconductor test instruments.
Invention effect
According to the present invention, can provide a kind of and in the short time, the auxiliary element damaged be exchanged, and the semiconductor test instruments that the clearing expense of auxiliary element is cheap can be made.
Accompanying drawing explanation
Fig. 1 is the map of current of the semiconductor test instruments 100 relating to embodiments of the invention.
Fig. 2 A and Fig. 2 B is the key diagram be described the situation of carrying out switch test when DUT is the 3rd IGBT16, and Fig. 2 A is action specification figure, Fig. 2 B is movement oscillogram.
Fig. 3 A and Fig. 3 B tests to the Reverse recovery when DUT is the 3rd FWD17 the key diagram be described, and Fig. 3 A is action specification figure, Fig. 3 B is movement oscillogram.
Fig. 4 A, Fig. 4 B and Fig. 4 C are the major part pie graph of assembly fixture 8, and Fig. 4 A is major part outboard profile, and Fig. 4 B is the figure being provided with DUT and the second auxiliary element 3, Fig. 4 C is major part vertical view.
Fig. 5 A and Fig. 5 B is the circuit diagram of semiconductor device 50, and Fig. 5 A is the basic circuit pie graph of two-in-one IGBT module 51, and Fig. 5 B is the basic circuit pie graph of the IGBT module 52 of a unification.
Fig. 6 is the circuit diagram after semiconductor device 50 is connected to semiconductor test instruments 500.
Fig. 7 A and Fig. 7 B is the IGBT64 as DUT of lower brachium pontis key diagram when carrying out switch test, and Fig. 7 A is circuit diagram, and Fig. 7 B is movement oscillogram.
Key diagram when Fig. 8 A and Fig. 8 B is the reverse recovery characteristic test carrying out FWD, Fig. 8 A is circuit diagram, and Fig. 8 B is movement oscillogram.
Fig. 9 is the circuit diagram of the semiconductor test instruments 600 when being formed the auxiliary element 75 of upper brachium pontis with IGBT76 and FWD77 of multiple parallel connection.
Symbol description
1 direct supply
2 first auxiliary elements
3 second auxiliary elements
4 loading coils
5 first switches
6 second switches
7 the 3rd switches
8 assembly fixtures
9,10,11 gate driver circuits
12 the one IGBT
13 the one FWD
14 the 2nd IGBT
15 the 2nd FWD
16 the 3rd IGBT
17 the 3rd FWD
21 erecting beds
22 hinges
23 current-carrying plates
24,26 terminals
25 bolts
26 back up pads
100 semiconductor test instruments
Embodiment
By following embodiment, embodiment is described.
Fig. 1 is the map of current of the semiconductor test instruments 100 relating to embodiments of the invention.This circuit is the figure of joint test element DUT.The situation of carrying out switching characteristic and reverse recovery characteristic test for this semiconductor test instruments 100 is described.
In FIG, semiconductor test instruments 100 possesses direct supply 1, the first auxiliary element 2 of upper brachium pontis and second auxiliary element 3 of connecting with it.Further, possess the loading coil 4 as inductive load, the first switch 5 as derailing switch, second switch 6, the 3rd switch 7 and the assembly fixture 8 of test element DUT and the second auxiliary element 3 can be configured.This assembly fixture 8 can easily be loaded and unloaded on semiconductor test instruments 100.Further, possess the first grid driving circuit 9 of driving first auxiliary element 2, drive the 3rd gate driver circuit 11 of the second grid driving circuit 10 of the second auxiliary element 3 and driving DUT.First switch 5, second switch 6, the 3rd switch 7 are such as mechanical switch.Further, above-mentioned first auxiliary element 2 and the second auxiliary element 3 are made up of the on-off element of IGBT (insulated gate bipolar transistor), MOSFET, bipolar transistor etc. and the backflow diode of reverse parallel connection with it.This backflow diode is also referred to as FWD (freewheelingdiode, fly-wheel diode).
First auxiliary element 2 is such as three IGBT12 in parallel and three FWD13 with each IGBT12 reverse parallel connection.For number, be not limited to three.Second auxiliary element 3 is the 2nd IGBT14 and the 2nd FWD15 with the 2nd IGBT14 reverse parallel connection.Further, DUT is the 3rd IGBT16 or the 3rd FWD17 with the 3rd IGBT16 reverse parallel connection.
Fig. 2 A and Fig. 2 B is the key diagram be described the situation of carrying out switch test when DUT is the 3rd IGBT16, and Fig. 2 A is action specification figure, and this Fig. 2 B is movement oscillogram.Under state before the test, the first switch 5, second switch 6, the 3rd switch 7 are opening.
First, at t0 closed second switch 6.Next, when after t1 conducting three IGBT12, make the 3rd IGBT16 conducting as DUT, flow through electric current I 1.This electric current I 1, begins through an IGBT12, second switch 6, loading coil 4, the 3rd IGBT16 from the positive pole of direct supply 1, flows to the negative pole of direct supply 1.
Next, make the 3rd IGBT16 cut-off at t2, flow through the back flow current I2 of loading coil 4, the 2nd FWD15, second switch 6.
Next, when making the 3rd IGBT16 conducting at t3, flow through the electric current I 31 of the 2nd FWD15 at the 3rd IGBT16, and begin through an IGBT12, second switch 6, loading coil 4, the electric current I 32 that circulates to the negative pole of direct supply 1 as the 3rd IGBT16 of DUT from the positive pole of direct supply 1.This process is the conduction test (switch test) of the 3rd IGBT16 as DUT.Irr shown in Fig. 2 B is the reverse recovery current of the 2nd FWD15.After the 2nd FWD15 Reverse recovery, also begin through an IGBT12, second switch 6, loading coil 4, the 3rd IGBT16 as DUT, to the negative pole circulating current I32 of direct supply 1 from the positive pole of direct supply 1.
Next, at t4, make the 3rd IGBT16 cut-off, again circulate via the back flow current I4 of loading coil 4, the 2nd FWD15, second switch 6.After this back flow current I4 decays and disappears, open second switch 6, disconnect not shown switch and by electrically separated to assembly fixture 8 and direct supply 1.Next, unload the assembly fixture 8 of the 3rd IGBT16 and the second auxiliary element 3 be accommodated with as DUT from semiconductor test instruments 100, exchange the 3rd IGBT16 as DUT.
When receiving two-in-one module 51 as shown in fig. 5 a at this assembly fixture 8, the FWD55 of upper brachium pontis becomes the second auxiliary element 3, and the IGBT54 of lower brachium pontis becomes DUT.Therefore, described test is the switch test of the 3rd IGBT16 for lower brachium pontis shown in Fig. 1.But the reverse recovery characteristic test forming the 2nd FWD15 of the upper brachium pontis of the second auxiliary element 3 also can be carried out in the moment of t3.That is, upper and lower the 2nd IGBT14, the 3rd IGBT16 of two-in-one module 51 and the 2nd upper and lower FWD15, the 3rd FWD17 double as DUT and the second auxiliary element 3 respectively.
Fig. 3 A and Fig. 3 B tests to the Reverse recovery when DUT is the 3rd FWD17 the key diagram be described, and Fig. 3 A is action specification figure, Fig. 3 B is movement oscillogram.
First, at closed 3rd switch 7 of t0, make an IGBT12 and the 2nd IGBT14 conducting at t1 and electric current I 1 is flow through.This electric current I 1 is from the negative pole that the positive pole of direct supply 1 begins through an IGBT12, the 2nd IGBT14, loading coil 4, the 3rd switch 7 flow to direct supply 1.
Next, make the 2nd IGBT14 cut-off at t2, flow through loading coil 4, back flow current I2 as the 3rd FWD17 of DUT.
Next, when making the 2nd IGBT14 conducting at t3, flow through I31 to the 3rd FWD17.This process becomes the reverse recovery characteristic test of the 3rd FWD17.As mentioned above, Irr is the reverse recovery current of the 3rd FWD17.3rd FWD17 is in reversely restoring process and after Reverse recovery, and electric current I 32 begins through an IGBT12, the 2nd IGBT14, loading coil 4, the 3rd switch 7 from the positive pole of direct supply 1, flows to the negative pole of direct supply 1.
Next, make the 2nd IGBT14 cut-off at t4, again flow through back flow current I4 at loading coil 4, the 3rd FWD17.After this back flow current I4 decays and no longer circulates, open the 3rd switch, unload the assembly fixture 8 being accommodated with the 3rd FWD17 and the second auxiliary element 3 from semiconductor test instruments 100, exchange the 3rd FWD17.
Exchange as the 3rd FWD17 of DUT is separated assembly fixture 8 from semiconductor test instruments 100.The assembly fixture 8 be separated is installed other the 3rd FWD17, again assembly fixture 8 is installed on semiconductor test instruments 100.
When receiving two-in-one module 51 as shown in fig. 5 a at this assembly fixture 8, as mentioned above, the IGBT53 of upper brachium pontis becomes the second auxiliary element 3, and the FWD56 of lower brachium pontis becomes DUT.Therefore, the reverse recovery characteristic that described test is the 3rd FWD17 for lower brachium pontis shown in Fig. 1 is tested.But the switch test forming the 2nd IGBT14 of the upper brachium pontis of the second auxiliary element 3 also can carry out simultaneously.
That is, by switching second switch 6 and the 3rd switch 7, the reverse recovery characteristic test of the 2nd FWD15 of the 2nd IGBT14 of the upper and lower bridge arm forming two-in-one module, the switch test of the 3rd IGBT16 and upper and lower bridge arm, the 3rd FWD17 can be carried out when not dismantling from assembly fixture 8.
At this semiconductor test instruments 100, be arranged on the IGBT12 as the first auxiliary element 2 in a semiconductor test instruments 100 or FWD13 by multiple (being three here) in parallel.
And, in switch test and/or reverse recovery characteristic test, when the second auxiliary element 3 damages, their assembly fixture 8 of storage is unloaded from semiconductor test instruments 100, exchange the second auxiliary element 3 damaged, and assembly fixture 8 is installed on semiconductor test instruments 100 again.Therefore, such with existing semiconductor test instruments 500, to expend time in when carrying out the exchange of auxiliary element and compared with can not exchanging as early as possible, because the second auxiliary element 3 damaged is accommodated in assembly fixture 8, so can quickly and easily exchange.
Wherein, use when the first switch 5 in figure is and tests a unification module under the test condition that the second auxiliary element 3 does not damage, also can not arrange.
Fig. 4 A, Fig. 4 B and Fig. 4 C are the major part pie graph of assembly fixture 8, and Fig. 4 A is major part outboard profile, and Fig. 4 B is the figure being provided with DUT and the second auxiliary element 3, Fig. 4 C is major part vertical view.This assembly fixture 8 possess DUT and the second auxiliary element 3 erecting bed 21, this erecting bed 21 is connected with hinge 22 and the back up pad 26 that electric current is flow through, the current-carrying plate 23 (23a, 23b, 23c) be configured in back up pad 26, each terminal 24 of current-carrying plate 23 and DUT and the second auxiliary element 3 carried out the secure component of the such as bolt 25 connected etc.Gate terminal does not arrange current-carrying plate 23 etc.At this, illustrate the situation that DUT and the second auxiliary element 3 are the formation of a unification module, but also there are their two kinds of situations being accommodated in the two-in-one module of same housing.The allocation position that the situation and of two-in-one module unifies the bolt 25 of the situation of module is different.At this moment, as long as prepare the different assembly fixture of the configuration of bolt 25.Further, current-carrying plate 23 can also be formed as the lit-par-lit structure across insulation course.In this case, as long as arrange notch part in the part that there is no need coupling bolt 25 of current-carrying plate 23, make it not to be connected with bolt 25.
Load DUT and the second auxiliary element 3 at the erecting bed 21 of assembly fixture 8, the current-carrying plate 23 with bolt 25 is placed on DUT and the second auxiliary element 3, fixes each terminal 24 and current-carrying plate 23 by bolt 25.The connection of current-carrying plate 23 and semiconductor test instruments 100 such as can configure terminal at semiconductor test instruments 100, and terminal is contacted with current-carrying plate 23.The connection of gate terminal and semiconductor test instruments 100 can contact by being directly configured in the contact type probe of semiconductor test instruments 100 etc.This example is connected with load 4 for current-carrying plate 23a, and current-carrying plate 23b is connected with the low potential side of direct supply 1, and current-carrying plate 23c is connected with the first auxiliary element 2.
By using this assembly fixture 8, even if when the second auxiliary element 3 damages, also can easily dismantle from semiconductor test instruments 100 assembly fixture 8 being accommodated with the second auxiliary element 3, can Fast Restoration.
Further, when the semiconductor device being accommodated in assembly fixture 8 is two-in-one module, the second auxiliary element 3 and DUT are same specification, and when the second auxiliary element 3 damages, two-in-one module is unacceptable product.This semiconductor test instruments 100 can carry out the attribute testing of the semiconductor element of IGBT, diode, power transistor etc.
Claims (6)
1. a semiconductor test instruments, is characterized in that, possesses:
Direct supply;
First auxiliary element, its hot side is connected with the positive pole of described direct supply;
Assembly fixture, the first test element of being connected with the negative pole of described direct supply of storage low potential side, to be connected with the low potential side of described first auxiliary element with hot side and the second auxiliary element of being connected with the hot side of described first test element of low potential side;
Inductive load, its one end is connected with the hot side of described first test element;
First derailing switch, its one end is connected with the other end of described inductive load, and the other end is connected with the negative pole of described direct supply; With
Second switch device, its one end is connected with the other end of described inductive load, and the other end is connected with the low potential side of described first auxiliary element,
Wherein, described assembly fixture can load and unload relative to described semiconductor test instruments.
2. semiconductor test instruments according to claim 1, is characterized in that,
Described first auxiliary element and described second auxiliary element are formed by on-off element with the backflow diode of this on-off element reverse parallel connection.
3. semiconductor test instruments according to claim 2, is characterized in that,
Described on-off element is insulated gate transistor or bipolar transistor.
4. semiconductor test instruments as claimed in any of claims 1 to 3, is characterized in that, described assembly fixture possesses:
First current-carrying plate, for being electrically connected with the low potential side of described test element, and is electrically connected with the negative side of described direct supply;
Second current-carrying plate, for being electrically connected with the hot side of described test element and the low potential side of described second auxiliary element, and is electrically connected with one end of described inductive load; With
3rd current-carrying plate, for being electrically connected with the hot side of described second auxiliary element and the low potential side of described first auxiliary element.
5. a semiconductor test instruments, is characterized in that, possesses:
Direct supply;
First auxiliary element, its hot side is connected with the positive pole of described direct supply;
Assembly fixture, the first test element of being connected with the negative pole of described direct supply of storage low potential side, to be connected with the low potential side of described first auxiliary element with hot side and the second test element of being connected with the hot side of described first test element of low potential side;
Inductive load, its one end is connected with the hot side of described first test element;
First derailing switch, its one end is connected with the other end of described inductive load, and the other end is connected with the negative pole of described direct supply; With
Second switch device, its one end is connected with the other end of described inductive load, and the other end is connected with the low potential side of described first auxiliary element,
Wherein, described assembly fixture can load and unload relative to described semiconductor test instruments.
6. semiconductor test instruments according to claim 1 or 5, is characterized in that,
Possess the 3rd derailing switch, its one end is connected with the other end of described inductive load, and the other end is connected with the positive pole of described direct supply.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014126182A JP6451097B2 (en) | 2014-06-19 | 2014-06-19 | Semiconductor test equipment |
| JP2014-126182 | 2014-06-19 |
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| Publication Number | Publication Date |
|---|---|
| CN105277865A true CN105277865A (en) | 2016-01-27 |
| CN105277865B CN105277865B (en) | 2018-09-07 |
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| US10996260B2 (en) | 2016-11-16 | 2021-05-04 | Fuji Electric Co., Ltd. | Semiconductor test circuit, semiconductor test apparatus, and semiconductor test method |
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| KR102155497B1 (en) * | 2019-09-19 | 2020-09-14 | 주식회사 에코세미텍 | Testing circuit for the switching characteristics of semiconductor device |
| CN113655242B (en) * | 2020-04-29 | 2024-04-19 | 株洲中车时代半导体有限公司 | Clamp and method for dynamic test of IGBT device |
| CN115421015A (en) * | 2021-05-14 | 2022-12-02 | 无锡华润华晶微电子有限公司 | IGBT module test fixture, examination seat and test box |
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| Publication number | Publication date |
|---|---|
| JP6451097B2 (en) | 2019-01-16 |
| JP2016004015A (en) | 2016-01-12 |
| CN105277865B (en) | 2018-09-07 |
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