CN105264430A - 一种光调制器及平面光子器件模组 - Google Patents
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
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Abstract
Description
Claims (1)
- 权 利 要 求1、 一种光调制器, 其包括聚合物波导、 至少一个第一电容器极板和至少 一个第二电容器极板, 所述聚合物波导包括芯层, 所述第一电容器极板和第二 电容器极板相互分离且均延伸至所述芯层内,在横截面的径向上, 所述第一电 容器极板的投影与所述第二电容器极板的投影至少部分重合,所述第一电容器 极板和 /或第二电容器极板采用石墨烯薄膜制成, 在所述第一电容器极板与第 二电容器极板之间施加调制电压信号, 改变第一电容器极板和 /或第二电容器 极板内的石墨烯光学吸收系数, 从而实现对聚合物波导中的导波光进行调制。2、 如权利要求 1所述的光调制器, 其特征在于, 所述石墨烯薄膜为单层 石墨烯或者寡层石墨烯。3、 如权利要求 1所述的光调制器, 其特征在于, 所述第一电容器极板与 第二电容器极板相互平行。4、 如权利要求 3所述的光调制器, 其特征在于, 所述第一电容器极板与 与其相邻的第二电容器极板之间的距离为 10纳米至 100纳米。5、 如权利要求 1至 4任一项所述的光调制器, 其特征在于, 所述聚合物 波导还包括上包层和下包层,所述上包层和下包层从所述芯层的相对两侧包覆 所述芯层, 所述芯层、 下包层及上包层均采用非导电聚合物材料制成。6、 如权利要求 1至 4任一项所述的光调制器, 其特征在于, 所述第一电 容器极板的个数为一个, 所述第二电容器极板的个数为两个, 所述第一电容器 极板位于两个所述第二电容器极板之间。7、 如权利要求 1至 4任一项所述的光调制器, 其特征在于, 所述第一电 容器极板的个数为一个, 所述第二电容器极板的个数为一个。8、 如权利要求 1至 4任一项所述的光调制器, 其特征在于, 所述第一电 容器极板的个数为两个以上, 所述第二电容器的个数为两个以上, 第一电容器 极板和第二电容器极板在芯层的厚度方向上交替排列。9、 如权利要求 1所述的光调制器, 其特征在于, 所述第一电容器极板采 用石墨烯薄膜制成, 所述第二电容器极板采用导电薄膜制成。10、 根据权利要求 1所述的光调制器, 其特征在于, 所述光调制器还包括 第一接触电极和第二接触电极,所述第一接触电极与所述第一电容器极板电连 接, 所述第二接触电极与所述第二电容器极板电连接, 所述第一接触电极与第 二接触电极用于接入调制电压信号。11、 如权利要求 10所述的光调制器, 其特征在于, 所述第一接触电极和 第二接触电极的材料为金、 铂、 导电聚合物或者氧化铟锡。12、 如权利要求 1所述的光调制器, 其特征在于, 所述聚合物波导的厚度 为 10微米至 200微米, 所述芯层的横截面为矩形, 矩形横截面的长和宽均为 3微米至 10微米。13、 一种平面光子器件模块, 包括激光器、 第一驱动电路、 第二驱动电路 及如权利要求 1至 12任一项所述的光调制器, 所述第一驱动电路用于控制及 驱动所述激光器发出激光 ,所述第二驱动电路用于向所述光调制器施加调制电 压信号, 所述激光器发出的激光传导至所述光调制器, 所述光调制器用于对所 述激光进行调制。14、 如权利要求 13所述的平面光子器件模块, 其特征在于, 所述平面光 子器件模块还包括光波导, 所述光波导连接于所述激光器与所述光调制器之 间, 所述光波导用于将所述激光器发出的激光传导至所述光调制器。15、 如权利要求 13所述的平面光子器件模块, 其特征在于, 所述激光器 为可调谐激光器或固定波长激光器。
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Cited By (2)
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CN113093409A (zh) * | 2021-04-09 | 2021-07-09 | 东南大学 | 一种基于连续介质束缚态的二维材料电光调制器 |
CN113366715A (zh) * | 2019-02-06 | 2021-09-07 | 日本电信电话株式会社 | 光发射器 |
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DE102016202765A1 (de) | 2016-02-23 | 2017-08-24 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V. | Schaltkreisanordnung und Verfahren zum Herstellen einer Schaltkreisanordnung |
CN108121091B (zh) * | 2017-12-08 | 2019-12-03 | 武汉邮电科学研究院 | 一种电光调制器及其制备方法 |
GB201813343D0 (en) * | 2018-08-15 | 2018-09-26 | Univ Manchester | Electrically controlled active wave guides |
CN110147000A (zh) * | 2019-07-05 | 2019-08-20 | 吉林大学 | 一种基于掩埋型石墨烯电极的有机聚合物光波导吸收型光调制器 |
CN110687695A (zh) * | 2019-11-21 | 2020-01-14 | 吉林大学 | 一种基于梯形石墨烯的偏振不敏感的有机聚合物吸收型光调制器 |
EP4145197A4 (en) * | 2020-04-29 | 2024-01-10 | Lg Electronics Inc | GRAPHENE PHOTONIC DEVICE |
DE202020104362U1 (de) | 2020-07-28 | 2021-10-29 | Gesellschaft für angewandte Mikro- und Optoelektronik mit beschränkter Haftung - AMO GmbH | Elektro-optische Einrichtung, Halbleitereinrichtung und Halbleitervorrichtung, elektro-optische Anordnung und Verwendung |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1481517A (zh) * | 2001-09-19 | 2004-03-10 | ���µ�����ҵ��ʽ���� | 光波导及其制造方法 |
CN1588233A (zh) * | 2004-08-14 | 2005-03-02 | 浙江大学 | 基于硅衬底的聚合物光波导器件的制作方法 |
CN101135748A (zh) * | 2006-08-30 | 2008-03-05 | 中国科学院半导体研究所 | 三电容mos硅基高速高调制效率电光调制器 |
CN101517445A (zh) * | 2006-09-22 | 2009-08-26 | 日立化成工业株式会社 | 光波导的制造方法 |
WO2012145605A1 (en) * | 2011-04-22 | 2012-10-26 | The Regents Of The University Of California | Graphene based optical modulator |
CN103064200A (zh) * | 2011-10-19 | 2013-04-24 | 三星电子株式会社 | 包括石墨烯的光学调制器 |
CN103163600A (zh) * | 2011-12-15 | 2013-06-19 | 鸿富锦精密工业(深圳)有限公司 | 光耦合模块及其制备方法 |
CN103901638A (zh) * | 2014-04-22 | 2014-07-02 | 电子科技大学 | 具有四层石墨烯结构的光调制器 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8105928B2 (en) * | 2009-11-04 | 2012-01-31 | International Business Machines Corporation | Graphene based switching device having a tunable bandgap |
CN102540506A (zh) * | 2011-12-31 | 2012-07-04 | 泰州巨纳新能源有限公司 | 基于d型光纤的石墨烯电光调制器及其制备方法 |
CN102707378B (zh) * | 2012-06-12 | 2013-09-04 | 华南师范大学 | 一种应用压印技术制作硅酮微纳光学结构的方法 |
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Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1481517A (zh) * | 2001-09-19 | 2004-03-10 | ���µ�����ҵ��ʽ���� | 光波导及其制造方法 |
CN1588233A (zh) * | 2004-08-14 | 2005-03-02 | 浙江大学 | 基于硅衬底的聚合物光波导器件的制作方法 |
CN101135748A (zh) * | 2006-08-30 | 2008-03-05 | 中国科学院半导体研究所 | 三电容mos硅基高速高调制效率电光调制器 |
CN101517445A (zh) * | 2006-09-22 | 2009-08-26 | 日立化成工业株式会社 | 光波导的制造方法 |
WO2012145605A1 (en) * | 2011-04-22 | 2012-10-26 | The Regents Of The University Of California | Graphene based optical modulator |
CN103064200A (zh) * | 2011-10-19 | 2013-04-24 | 三星电子株式会社 | 包括石墨烯的光学调制器 |
CN103163600A (zh) * | 2011-12-15 | 2013-06-19 | 鸿富锦精密工业(深圳)有限公司 | 光耦合模块及其制备方法 |
CN103901638A (zh) * | 2014-04-22 | 2014-07-02 | 电子科技大学 | 具有四层石墨烯结构的光调制器 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113366715A (zh) * | 2019-02-06 | 2021-09-07 | 日本电信电话株式会社 | 光发射器 |
CN113366715B (zh) * | 2019-02-06 | 2024-01-09 | 日本电信电话株式会社 | 光发射器 |
CN113093409A (zh) * | 2021-04-09 | 2021-07-09 | 东南大学 | 一种基于连续介质束缚态的二维材料电光调制器 |
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