CN105261432A - Slurry for thermosetting thick film thermistor, and thermistor prepared from slurry - Google Patents
Slurry for thermosetting thick film thermistor, and thermistor prepared from slurry Download PDFInfo
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- CN105261432A CN105261432A CN201510749577.7A CN201510749577A CN105261432A CN 105261432 A CN105261432 A CN 105261432A CN 201510749577 A CN201510749577 A CN 201510749577A CN 105261432 A CN105261432 A CN 105261432A
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Abstract
Slurry for a thermosetting thick film thermistor is disclosed. The slurry for the thermosetting thick film thermistor comprises the following components in percentage by mass: 20-60% of thermosensitive semiconductor ceramic powder, 30-70% of thermosetting binder and 10-50% of diluent. The invention further provides a thick film thermistor; the thick film thermistor comprises a substrate, an electrode, a thermistor film layer and a protection film layer; the electrode comprises a positive electrode and a negative electrode; the positive electrode and the negative electrode are arranged on the substrate; electrode gaps are between the positive electrode and the negative electrode; the electrode and the substrate are covered with the thermistor film layer to communicate the positive electrode with the negative electrode; the thermistor film layer is covered with the protection film layer; and the thermistor film layer is formed by the slurry for the thermosetting thick film thermistor. The invention also provides a manufacturing method for the thermosetting thick film thermistor.
Description
Technical field
The present invention relates to a kind of Thermistor, particularly relate to and a kind ofly make the semiconductor slurry of membranaceous thermistor, the temperature sensor be made up of this slurry and manufacture method thereof.
Background technology
Thermistor refers to thermally sensitive resistive element, shows different resistance values at different temperature, and then as the conventional building block of temperature sensor.Thermistor is divided into positive temperature coefficient thermistor (PTC) and negative temperature coefficient thermistor (NTC) according to temperature coefficient difference.PTC thermistor resistance value when temperature is higher is larger, and NTC thermistor resistance value when temperature is higher is lower, and they belong to semiconductor device.
The resistor disc of mainly slug type in prior art, be divided into circular resistor disc and square resistor disc, refer to Fig. 1 a and 1b, wherein Fig. 1 a is slug type coin shape thermistor chip 031, its end face is provided with printing noble metal electrode 02, this slug type coin shape thermistor chip thickness is 1-5mm, and diameter is 3-20mm; Fig. 1 b is slug type square thermistor chip 032, and its thickness is 0.3-1mm, and length is 0.5-2mm.
Refer to Fig. 2 a and 2b, wherein, Fig. 2 a is the thermistor after the encapsulation of slug type coin shape thermistor chip, it comprises slug type coin shape thermistor chip 031, be wrapped in the epoxy resins insulation protective layer 041 outside this slug type coin shape thermistor chip 031, and the pin 05 to be connected respectively with slug type coin shape thermistor chip 031 two ends, this thermistor thickness after encapsulation is 5-10mm; Fig. 2 b is the thermistor after the encapsulation of slug type square thermistor chip; it comprises slug type square thermistor chip 032; be wrapped in the epoxy resins insulation protective layer 041 outside this slug type square thermistor chip 032; and the pin 05 to be connected respectively with slug type square thermistor chip 032 two ends, this thermistor thickness after encapsulation is 1-5mm.Refer to Fig. 3, it is the temperature sensor comprising above-mentioned slug type thermosensitive resistor film, and this temperature sensor comprises slug type thermosensitive resistor film 03, is connected to the pin 05 at slug type thermosensitive resistor film 03 two ends, the probe sleeve 06 be set in outside slug type thermosensitive resistor film 03, be arranged on the splicing ear 07 of pin 05 end.
In order to reduce the thickness of thermistor, occurred referring to Fig. 4 a and 4b by the thermistor that sheet type encapsulates in prior art, the two is vertical view and the front view of sheet type encapsulation thermistor respectively.This sheet type encapsulation thermistor comprises polyester film 01, the slug type square thermistor chip 032 be arranged on this polyester film 01, and the pin 05 be connected respectively with slug type square thermistor chip 032 two ends.
The thickness of this sheet type encapsulation thermistor is 0.8-1.6mm, this thickness is formed primarily of slug type square thermistor chip 032, therefore the size after thermistor encapsulation is mainly subject to the thickness limitation of slug type resistor disc, even if adopt polyester film 01 as substrate, realize sheet type encapsulation, the integral thickness of thermistor is the thinnest also only reaches 0.8mm, is difficult to meet the application under some ultra-thin environment; Secondly, because the thickness of thermistor is larger, thermal response time is then longer, and response speed more, needs the occasion of super fast response to be then difficult to meet the demands at some; And the single weight of slug type resistor disc is between 0.1-10g, and weight is difficult to alleviate.
Simultaneously, the manufacturing process of the temperature measuring type temperature sensor adopting conventional sintering type thermistor to obtain is generally :-solidification-test is filled in the shaping-inserted sheet-welding-cleaning-encapsulating-solidification that goes between-transducer embedding, always have 9 procedures, operation is more, comparatively complicated.
Summary of the invention
In order to solve the problems of the technologies described above, the invention provides a kind of slurry for the manufacture of thick-film thermistor, this thermosetting thick-film thermistor slurry can produce the thick-film thermistor that thickness is little, weight is little, fast response time, operation are few.
The technical solution adopted in the present invention is:
A kind of thermosetting thick-film thermistor slurry, is made up of each component of following mass percent:
Heat-sensitive semiconductive ceramic powder 20-60%
Thermosetting adhesive 30-70%
Diluent 10-50%
This thermosetting thick-film thermistor slurry by printing or the technological forming such as coating on base material, can obtain little, the lightweight thermistor rete of thickness 200-400 DEG C of low-temperature setting afterwards.
Further, described heat-sensitive semiconductive ceramic powder is negative temperature coefficient heat-sensitive semiconductive ceramic powder.Particularly, it is using the Spinel material of the metal oxide synthesis such as manganese oxide, cobalt oxide, iron oxide as function phase.
Further, described thermosetting adhesive is the one in following material: epoxy resin, organic siliconresin, polyimide resin, phenolic resins, polyurethane, vinyl chloride-vinyl acetate resin, acrylic resin, Teflon resin, modified rubber.
Further, described thermosetting thick-film thermistor slurry also comprises the auxiliary agent of following mass percent: curing agent 0.1-2%, sagging inhibitor 0.1-2%, dispersant 0.1-2%, levelling agent 0.1-2%, thixotropic agent 0.1-2%, adhesion promoter 0.1-2%.
Compared to prior art, thermosetting thick-film thermistor slurry of the present invention, by manganese oxide, cobalt oxide, the Spinel material of the materials synthesis such as iron oxide is as function phase, a kind ofly mix with heat-sensitive semiconductive ceramic powder the advanced composite material (ACM) formed by heat-curing resin, can by printing or the technological forming such as coating on base material, thermistor rete is obtained afterwards 200-400 DEG C of low-temperature setting, follow-up obtained thickness can not only be convenient to little, lightweight, the thermistor of fast response time, and without the need to through high temperature sintering in successive process, reduce production temperature, production technology greatly simplifies.
The present invention also provides a kind of thick-film thermistor, and comprise substrate, electrode, thermistor rete and protective film, described electrode comprises both positive and negative polarity, and described both positive and negative polarity is arranged on the substrate, is provided with electrode gap between described both positive and negative polarity; Described thermistor rete covers on described electrode and described substrate, and the both positive and negative polarity of electrode is communicated with; Described protective film covers on described thermistor rete; Described thermistor rete is formed by above-mentioned thermosetting thick-film thermistor slurry.
Further, described substrate is made up of organic polyester film, inorganic ceramic or glass.
Further, described thermistor rete is formed by print process, the tape casting or rubbing method by above-mentioned thermosetting thick-film thermistor slurry, and its thickness is 0.01 ~ 0.10mm.Adopt above-mentioned thermosetting thick-film thermistor slurry to solidify under low temperature (200-400 DEG C) condition easily and obtain the thermistor rete that thickness is only 0.01 ~ 0.10mm, greatly reduce thickness and the weight of thermistor, improve response speed simultaneously.
Compared to prior art, thick-film thermistor thickness of the present invention is little, weight is little, fast response time, and manufacture craft is simple.
The present invention also provides a kind of manufacture method of thermosetting thick-film thermistor, comprises the following steps:
(1) electrode pattern is printed on substrate surface, and solidification is dry;
(2) above-mentioned thermosetting thick-film thermistor slurry is covered on described electrode pattern, form thermistor rete, and solidification is dry;
(3) protective film is printed on described thermistor rete outer surface, obtained thermosetting thick-film thermistor;
(4) performance test is carried out to obtained thermosetting thick-film thermistor.
Further, in step (1), with screen process press, elargol electrode pattern is printed in substrate surface, and at the temperature of 150 DEG C, solidifies dry 40min.Preferably, substrate can select organic polyester film (as: polyimide film) or inorganic ceramic or the slim substrate of glass (as: alumina substrate).By selecting different electrode patterns or regulating the gap between two electrodes to obtain the resistance of different thermistors.
Further, in step (2), by print process, the tape casting or rubbing method, described thermosetting thick-film thermistor slurry is covered on described electrode pattern, and solidification is dry.Particularly, first need to prepare described thermosetting thick-film thermistor slurry, comprise the following steps:
1) in container, add load weighted heat-sensitive semiconductive ceramic powder, thermosetting adhesive, solvent and various corresponding auxiliary agent, and fully mix;
2) three-roll grinder rolling is used;
3) check granularity, until the fineness of heat-sensitive semiconductive ceramic powder is eligible: median particle diameter D50 is less than or equal to 1.0 μm, can rolling be stopped, inspection warehouse-in.
Described thermosetting thick-film thermistor slurry is covered after on described electrode pattern by print process, the tape casting or rubbing method by above-mentioned obtained thermosetting thick-film thermistor slurry, thermosetting adhesive difference according to selecting arranges different conditions of cure, particularly:
A, employing epoxy resin are as thermosetting adhesive: can select normal temperature cure and heating cure; The wherein condition of heating cure: heating cure 2 hours at 90 ~ 120 DEG C of temperature.
B, adopt organic siliconresin as thermosetting adhesive: temperature 30--50 DEG C, solidification 24 ~ 72 hours under relative humidity RH40 ~ 80% condition.
C, employing polyimide resin are as thermosetting adhesive: solidify 0.5 ~ 2 hour at 220 ~ 300 DEG C of temperature.
D, employing polyurethane are as thermosetting adhesive: solidify 24 hours at 80 ~ 90 DEG C of temperature.
E, employing vinyl chloride-vinyl acetate resin are as thermosetting adhesive: solidify 2 hours at 60 ~ 80 DEG C of temperature.
F, employing acrylic resin are as thermosetting adhesive: solidify 0.5 ~ 2 hour at 120 ~ 180 DEG C of temperature.
G, employing TEFLON (Teflon) resin are as thermosetting adhesive: solidify 0.5 ~ 2 hour at 250 ~ 400 DEG C of temperature.
Compared to prior art, the manufacture method of thermosetting thick-film thermistor of the present invention, processing procedure operation greatly simplifies, and can obtain that thickness is little, lightweight, the thermistor of fast response time easily.
In order to understand better and implement, describe the present invention in detail below in conjunction with accompanying drawing.
Accompanying drawing explanation
Fig. 1 a is the schematic diagram of slug type coin shape thermistor chip in prior art;
Fig. 1 b is the schematic diagram of slug type square thermistor chip in prior art;
Fig. 2 a is the schematic diagram of the thermistor in prior art after the encapsulation of slug type coin shape thermistor chip;
Fig. 2 b is the schematic diagram of the thermistor in prior art after the encapsulation of slug type square thermistor chip;
Fig. 3 is the schematic diagram of temperature sensor of the prior art;
Fig. 4 a is the vertical view of sheet type of the prior art encapsulation thermistor;
Fig. 4 b is the front view of sheet type of the prior art encapsulation thermistor;
Fig. 5 a is the vertical view of the thick-film thermistor of embodiments of the invention 1;
Fig. 5 b is the front view of the thick-film thermistor of embodiments of the invention 1;
Fig. 6 a is the vertical view of the thick-film thermistor of embodiments of the invention 2;
Fig. 6 b is the front view of the thick-film thermistor of embodiments of the invention 2.
Embodiment
thermosetting thick-film thermistor slurry
The invention provides a kind of thermosetting thick-film thermistor slurry for the formation of thermistor rete, it is made up of each component of following mass percent:
Heat-sensitive semiconductive ceramic powder 20-60%
Thermosetting adhesive 30-70%
Diluent 10-50%
This thermosetting thick-film thermistor slurry is the slurry of the thermistor rete making negative temperature coefficient (NTC).Wherein, described heat-sensitive semiconductive ceramic powder is negative temperature coefficient heat-sensitive semiconductive ceramic powder, and this material consists of prior art, and it is made up of two or more in the metal oxide in table 1 usually:
Table 1 heat-sensitive semiconductive ceramic powder constituent proportioning
Described heat-sensitive semiconductive ceramic powder is using the Spinel material of the two or more synthesis in above-mentioned metal oxide as function phase.
Below enumerate the better composition proportion of three described heat-sensitive semiconductive ceramic powders, refer to table 2.
The better composition proportion table of table 2 heat-sensitive semiconductive ceramic powder
| Composition | Cobalt oxide | Manganese oxide | Nickel oxide | Iron oxide | Cupric oxide | Aluminium oxide | Chromium oxide | Zinc oxide |
| Proportioning 1 | 30％ | 50％ | 15％ | 0％ | 0％ | 0％ | 0％ | 5％ |
| Proportioning 2 | 0％ | 70％ | 5％ | 20％ | 0％ | 0％ | 0％ | 5％ |
| Proportioning 3 | 10％ | 60％ | 15％ | 5％ | 2％ | 2％ | 1％ | 5％ |
Make the operation of this heat-sensitive semiconductive ceramic powder successively: batching ball milling-discharging-dry-sieve-pre-burning-grind-dry-sieve-powder is for subsequent use.
Described thermosetting adhesive is the one in following material: epoxy resin, organic siliconresin, polyimide resin, phenolic resins, polyurethane, vinyl chloride-vinyl acetate resin, acrylic resin, Teflon resin, modified rubber.This thermosetting adhesive forms the molecular structure of the electrode (as conductive silver glue) of thick-film thermistor after hardening, for this electrode provides mechanical property and adhesive property guarantee, and makes conductive filler particles form passage.Meanwhile, this thermosetting adhesive, as the carrier of heat-sensitive semiconductive ceramic powder, can have the resin system of the characteristics such as different tack, hardness, flexility according to different application scenario comprehensive selection.Its condition of cure of different thermosetting adhesive resins is different, as cold curing, intermediate temperature setting, hot setting, ultraviolet light polymerization etc.Wherein, the thermosetting adhesive of cold curing can cause thermosetting thick-film thermistor slurry more unstable, and when room temperature storage, its specific insulation easily changes.
Described diluent according to different thermosetting adhesive corresponding selection, as absolute ethyl alcohol, dimethylbenzene, can gather methylformamide, acetone etc.
Further, a certain amount of auxiliary agent can also be added in thermosetting thick-film thermistor slurry, the auxiliary agent as following mass percent:
Prepare described thermosetting thick-film thermistor slurry, comprise the following steps:
1) in container, add load weighted heat-sensitive semiconductive ceramic powder, thermosetting adhesive, solvent and various corresponding auxiliary agent, and fully mix;
2) three-roll grinder rolling is used;
3) check granularity, until the fineness of heat-sensitive semiconductive ceramic powder is eligible: median particle diameter D50 is less than or equal to 1.0 μm, can rolling be stopped, inspection warehouse-in.
Compared to prior art, thermosetting thick-film thermistor slurry of the present invention, by manganese oxide, cobalt oxide, the Spinel material of the materials synthesis such as iron oxide is as function phase, a kind ofly mix with heat-sensitive semiconductive ceramic powder the advanced composite material (ACM) formed by heat-curing resin, can by printing or the technological forming such as coating on base material, thermistor rete is obtained afterwards 200-400 DEG C of low-temperature setting, follow-up obtained thickness can not only be convenient to little, lightweight, the thermistor of fast response time, and without the need to through high temperature sintering in successive process, reduce production temperature, production technology greatly simplifies.
thick-film thermistor embodiment 1
The present invention also provides a kind of thick-film thermistor.Refer to Fig. 5 a and 5b, the two is respectively vertical view and the front view of the thick-film thermistor of the present embodiment.Thick-film thermistor of the present invention comprises substrate 11, electrode 21, thermistor rete 31 and protective film 41.Wherein, this electrode 21 arranges on the substrate 11, and this thermistor rete 31 covers on electrode 21 and substrate 11, and the both positive and negative polarity of electrode is communicated with; This protective film 41 covers on this thermistor rete 31.
This substrate 11 is thin rounded flakes, and two bar shaped projections are stretched out in its side.This substrate 11 is made up of organic substrate or inorganic substrate, and organic substrate comprises organic polyester film, and as polyimide film, inorganic substrate comprises inorganic ceramic (main component is metal oxide) and glass flake, and wherein metal oxide is as aluminium oxide.In the present embodiment, substrate 11 is polyester film, and its thickness is 0.03-0.10mm.
This electrode 21 is arranged on substrate 11, and it comprises both positive and negative polarity, is provided with electrode gap G between this both positive and negative polarity.This electrode 21 is made up of noble metal, in the present embodiment, preferred elargol is made, by screen process press, specific elargol electrode pattern is printed in substrate 11 surface, then it is 150 DEG C at baking temperature, drying time is the dry formation of solidification under the condition of 40min, and the thickness after solidification is 0.01-0.02mm.By adopting different patterns or arranging the electrode gap G between both positive and negative polarity, the thermistor of different resistance can be obtained.Further, this electrode 21 also comprises respectively from the two parallel strip pins that both positive and negative polarity extends out, this pin is arranged in the corresponding strip projection of substrate 11, and this pin and both positive and negative polarity are all parts for elargol electrode pattern, is printed in substrate 11 surface simultaneously.
This thermistor rete 31 covers on electrode 21 and substrate 11, can the both positive and negative polarity of part coated electrode 21, also all can cover, as long as make the both positive and negative polarity of electrode 21 be communicated with, in the present embodiment, preferably all cover this both positive and negative polarity.Adopt print process, the tape casting or rubbing method to cover on electrode 21 and substrate 11 by thermosetting thick-film thermistor slurry disclosed above, form thermistor rete 31 after solidification is dry, the thickness after solidification is 0.01-0.10mm.
This protective film 41 covers on thermistor rete 31, and its concrete composition is identical with the welding resistance diaphragm of PCB, as resin, plays protection against the tide, anticorrosion, anti-mechanical abrasion to thermistor rete 31, and the thickness after its solidification is 0.01-0.02mm.Further, protective film 41 also covers on the both positive and negative polarity of electrode 21 simultaneously, protects this both positive and negative polarity.
The thick-film thermistor (substrate is organic polyester film) of the present embodiment; the gross thickness H of thick-film thermistor is the thinnest be can be: substrate 0.03mm+ electrode 0.01mm+ thermistor rete 0.02mm+ protective film 0.01mm=0.07mm, and the minimum thickness 0.8mm that can reach compared with sheet type encapsulation thermistor in prior art will reduce greatly.
thick-film thermistor embodiment 2
Refer to Fig. 6 a and 6b, the two is respectively vertical view and the front view of the thick-film thermistor of the present embodiment.The thick-film thermistor of the present embodiment is substantially the same manner as Example 1, only has following difference: substrate 12 is rectangular sheet, and adopt aluminium oxide to make, its thickness is 0.06-0.10mm.
Therefore; the thick-film thermistor (substrate is aluminium oxide) of the present embodiment; the gross thickness H of thick-film thermistor is the thinnest be can be: substrate 0.08mm+ electrode 0.01mm+ thermistor rete 0.02mm+ protective film 0.01mm=0.12mm, and the minimum thickness 0.8 that can reach compared with sheet type encapsulation thermistor in prior art will reduce greatly.
the manufacture method of thermosetting thick-film thermistor
The present invention also provides a kind of manufacture method of thermosetting thick-film thermistor, and its step is as follows:
(1) electrode pattern is printed on substrate surface, and solidification is dry;
Particularly, noble metal can be adopted to make electrode, preferably silver-colored in the present embodiment.By screen process press, specific elargol electrode pattern is printed in substrate surface, be then 150 DEG C at baking temperature, drying time is solidify drying and moulding under the condition of 40min, and the thickness after solidification is 0.01-0.02mm.The shape of this substrate can be circular or rectangle, it is made up of organic substrate or inorganic substrate, organic substrate comprises organic polyester film, as polyimide film, inorganic substrate comprises inorganic ceramic (main component is metal oxide) and glass flake, and wherein metal oxide is as aluminium oxide.This electrode comprises both positive and negative polarity, is provided with electrode gap G between this both positive and negative polarity, by adopting different patterns or arranging the electrode gap G between both positive and negative polarity, can obtain the thermistor of different resistance.Further, this electrode also comprises respectively from the two parallel strip pins that both positive and negative polarity extends out, and this pin is arranged in the corresponding strip projection of substrate, and this pin and both positive and negative polarity are all parts for elargol electrode pattern, are printed in substrate surface simultaneously.
(2) above-mentioned thermosetting thick-film thermistor slurry is covered on described electrode pattern, form thermistor rete, and solidification is dry;
Particularly, first need to prepare described thermosetting thick-film thermistor slurry, comprise the following steps:
1) in container, add load weighted heat-sensitive semiconductive ceramic powder, thermosetting adhesive, solvent and various corresponding auxiliary agent, and fully mix;
2) three-roll grinder rolling is used;
3) check granularity, until the fineness of heat-sensitive semiconductive ceramic powder is eligible: median particle diameter D50 is less than or equal to 1.0 μm, can rolling be stopped, inspection warehouse-in.
Described thermosetting thick-film thermistor slurry is covered after on described electrode pattern by print process, the tape casting or rubbing method by above-mentioned obtained thermosetting thick-film thermistor slurry, thermosetting adhesive difference according to selecting arranges different conditions of cure, particularly:
A, employing epoxy resin are as thermosetting adhesive: can select normal temperature cure and heating cure; The wherein condition of heating cure: heating cure 2 hours at 90 ~ 120 DEG C of temperature.
B, adopt organic siliconresin as thermosetting adhesive: temperature 30--50 DEG C, solidification 24 ~ 72 hours under relative humidity RH40 ~ 80% condition.
C, employing polyimide resin are as thermosetting adhesive: solidify 0.5 ~ 2 hour at 220 ~ 300 DEG C of temperature.
D, employing polyurethane are as thermosetting adhesive: solidify 24 hours at 80 ~ 90 DEG C of temperature.
E, employing vinyl chloride-vinyl acetate resin are as thermosetting adhesive: solidify 2 hours at 60 ~ 80 DEG C of temperature.
F, employing acrylic resin are as thermosetting adhesive: solidify 0.5 ~ 2 hour at 120 ~ 180 DEG C of temperature.
G, employing TEFLON (Teflon) resin are as thermosetting adhesive: solidify 0.5 ~ 2 hour at 250 ~ 400 DEG C of temperature.
(3) protective film is printed on described thermistor rete outer surface, obtained thermosetting thick-film thermistor;
Particularly, the concrete composition of this protective film is identical with the welding resistance diaphragm of PCB, as resin, plays protection against the tide, anticorrosion, anti-mechanical abrasion to thermistor rete, and the thickness after its solidification is 0.01-0.02mm.Further, protective film also covers on the both positive and negative polarity of electrode simultaneously, protects this both positive and negative polarity.
(4) performance test is carried out to obtained thermosetting thick-film thermistor.
Particularly, comprise electric property, as R-T curve, nominal temperature resistance R
t, a value/B value, also have physical property tack, hardness, flexility etc.
With the thermistor rete that this thermosetting thick-film thermistor slurry makes, and be material Bcs mechanics tunnel effect by the operation principle of the thick-film thermistor of this thermistor rete making.The electric conductivity of heat-sensitive semiconductive ceramic powder, and non-fully is produced by the interparticle directly contact of heat-sensitive semiconductive ceramic powder of filling, but under the effect of electric field, electronics on the particle that distance is very near crosses particle gap barrier by thermal vibration, forms electron channel and makes material present electric conductivity.
Particularly, after thermosetting thick-film thermistor slurry curing, polymeric matrix and semiconductor fills are island structure compound system.In real material, galvanic circle is the common results in multiple different conduction state, i.e. the conduction situation of the thermistor rete of the thermosetting thick-film thermistor slurry formation of filled-type can be divided into 3 kinds:
(1) a part of conducting particles is the totally continuous state and form conductive channel (this state probability is lower) of contacting with each other;
(2) the incomplete Continuous Contact of a part of conducting particles, because tunnel effect forms current path (the galvanic circle overwhelming majority is planted tunnel effect thus and formed) between the conducting particles that distance very closely and not directly contacts;
(3) a part of conducting particles is completely discontinuous, and the separator between conducting particles is thicker, forms the insulating barrier of electricity.
Above three kinds of state compounds constitute the galvanic circle of thermistor rete.
Relative to the thermistor of slug type of the prior art, thick-film thermistor of the present invention has the following advantages:
1, thickness and volume reduce greatly.The reduction of product thickness greatly have compressed installation and takes up room.Former thermistor temperature sensor adopts coin shape thermosensitive resistor film and the manufacture of square thermosensitive resistor film to form, and shared by it, space thickness is generally 1-5mm, even if adopt the thermistor of sheet type encapsulation, its thickness is the thinnest is also 0.8mm.And adopt the most I of the thickness H of thick-film thermistor of the present invention to reach 0.07-0.12mm.Wherein, its gross thickness H the thinnest 0.07mm that can be when substrate is organic polyester film, when substrate is aluminium oxide its gross thickness H is the thinnest can be 0.12mm.This will meet the temperature sensing in a lot of ultra-thin space.
2, product weight alleviates greatly.The single weight of the thermistor of traditional coin shape thermosensitive resistor film and the manufacture of square thermosensitive resistor film is between 0.1g-10g, and the single weight of thick-film thermistor of the present invention is 0.01-0.05g.
3, response speed promotes greatly.Because substrate and thermistor rete is greatly thinning, causes thermal response time greatly to reduce, response speed is greatly improved.Under same test condition (such as: RT=25 DEG C (RT refers to room temperature), test in air, T1=100 DEG C, T2=25 DEG C): the thermal time constant (also known as thermal response time) of the thermistor of traditional coin shape thermosensitive resistor film and the manufacture of square thermosensitive resistor film is 5 ~ 20s.And the thick-film thermistor that the kapton film substrate of 0.03mm thickness of the present invention is made, or the thick-film thermistor that the alumina substrate of 0.08mm thickness is made, both thermal time constants are 0.05 ~ 2.0s, greatly reduce thermal response time.
4, making technology simplifies.Coin shape thermosensitive resistor film is adopted to be generally with the technical process of the thermistor of square thermosensitive resistor film manufacture: the shaping-inserted sheet that goes between-weld-clean-encapsulate-solidify-transducer embedding fills-solidifies-tests, always have 9 procedures.And the manufacturing process of thick-film thermistor of the present invention is: conductive silver glue printing-solidification-thermistor rete shaping (print process, the tape casting or rubbing method)-solidification-test, totally 5 procedures, enormously simplify technological process.
The present invention is not limited to above-mentioned execution mode, if do not depart from the spirit and scope of the present invention to various change of the present invention or distortion, if these are changed and distortion belongs within claim of the present invention and equivalent technologies scope, then the present invention is also intended to comprise these changes and distortion.
Claims (10)
1. a thermosetting thick-film thermistor slurry, is characterized in that: be made up of each component of following mass percent:
Heat-sensitive semiconductive ceramic powder 20-60%
Thermosetting adhesive 30-70%
Diluent 10-50%
2. thermosetting thick-film thermistor slurry according to claim 1, is characterized in that: described heat-sensitive semiconductive ceramic powder is negative temperature coefficient heat-sensitive semiconductive ceramic powder.
3. thermosetting thick-film thermistor slurry according to claim 1, is characterized in that: described thermosetting adhesive is the one in following material: epoxy resin, organic siliconresin, polyimide resin, phenolic resins, polyurethane, vinyl chloride-vinyl acetate resin, acrylic resin, Teflon resin, modified rubber.
4. thermosetting thick-film thermistor slurry according to claim 1, is characterized in that: the auxiliary agent also comprising following mass percent: curing agent 0.1-2%, sagging inhibitor 0.1-2%, dispersant 0.1-2%, levelling agent 0.1-2%, thixotropic agent 0.1-2%, adhesion promoter 0.1-2%.
5. a thick-film thermistor, is characterized in that: comprise substrate, electrode, thermistor rete and protective film, described electrode comprises both positive and negative polarity, and described both positive and negative polarity is arranged on the substrate, is provided with electrode gap between described both positive and negative polarity; Described thermistor rete covers on described electrode and described substrate, and the both positive and negative polarity of electrode is communicated with; Described protective film covers on described thermistor rete; The thermosetting thick-film thermistor slurry of described thermistor rete according to any one of Claims 1 to 4 is formed.
6. thick-film thermistor according to claim 5, is characterized in that: described substrate is made up of organic polyester film, inorganic ceramic or glass.
7. thick-film thermistor according to claim 5, it is characterized in that: the thermosetting thick-film thermistor slurry of described thermistor rete according to any one of Claims 1 to 4 is formed by print process, the tape casting or rubbing method, and its thickness is 0.01 ~ 0.10mm.
8. a manufacture method for thermosetting thick-film thermistor, is characterized in that: comprise the following steps:
(1) electrode pattern is printed on substrate surface, and solidification is dry;
(2) the thermosetting thick-film thermistor slurry described in any one of Claims 1 to 4 is covered on described electrode pattern, form thermistor rete, and solidification is dry;
(3) protective film is printed on described thermistor rete outer surface, obtained thermosetting thick-film thermistor;
(4) performance test is carried out to obtained thermosetting thick-film thermistor.
9. the manufacture method of thick-film thermistor according to claim 7, is characterized in that: in step (1), with screen process press, elargol electrode pattern is printed in substrate surface, and at the temperature of 150 DEG C, solidify dry 40min.
10. the manufacture method of thick-film thermistor according to claim 7, it is characterized in that: in step (2), by print process, the tape casting or rubbing method, the thermosetting thick-film thermistor slurry described in any one of Claims 1 to 4 is covered on described electrode pattern, and solidification is dry.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510749577.7A CN105261432A (en) | 2015-11-05 | 2015-11-05 | Slurry for thermosetting thick film thermistor, and thermistor prepared from slurry |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510749577.7A CN105261432A (en) | 2015-11-05 | 2015-11-05 | Slurry for thermosetting thick film thermistor, and thermistor prepared from slurry |
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| CN105261432A true CN105261432A (en) | 2016-01-20 |
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| CN113936858A (en) * | 2020-07-13 | 2022-01-14 | 广东美的白色家电技术创新中心有限公司 | Temperature-sensing resistor paste, preparation method thereof, steam generator and household appliance |
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