CN105247685A - 先进的cpv太阳能电池组件处理 - Google Patents
先进的cpv太阳能电池组件处理 Download PDFInfo
- Publication number
- CN105247685A CN105247685A CN201480030798.2A CN201480030798A CN105247685A CN 105247685 A CN105247685 A CN 105247685A CN 201480030798 A CN201480030798 A CN 201480030798A CN 105247685 A CN105247685 A CN 105247685A
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- Prior art keywords
- solar module
- diode
- semiconductor region
- semiconductor
- region
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- Granted
Links
- 238000000034 method Methods 0.000 title description 20
- 230000008569 process Effects 0.000 title description 13
- 239000004065 semiconductor Substances 0.000 claims description 145
- 238000009833 condensation Methods 0.000 claims description 29
- 230000005494 condensation Effects 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims description 8
- 239000000853 adhesive Substances 0.000 claims description 7
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- 239000002019 doping agent Substances 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- -1 InGaAsP Inorganic materials 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- 239000007769 metal material Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 30
- 239000000758 substrate Substances 0.000 description 23
- 230000008901 benefit Effects 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000002349 favourable effect Effects 0.000 description 3
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/044—PV modules or arrays of single PV cells including bypass diodes
- H01L31/0443—PV modules or arrays of single PV cells including bypass diodes comprising bypass diodes integrated or directly associated with the devices, e.g. bypass diodes integrated or formed in or on the same substrate as the photovoltaic cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/142—Energy conversion devices
- H01L27/1421—Energy conversion devices comprising bypass diodes integrated or directly associated with the device, e.g. bypass diode integrated or formed in or on the same substrate as the solar cell
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/052—Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0687—Multiple junction or tandem solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Inorganic Chemistry (AREA)
Abstract
Description
Claims (19)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1352866A FR3004002B1 (fr) | 2013-03-29 | 2013-03-29 | Procede d'assemblage avance de cellule photovoltaique concentree |
FR1352866 | 2013-03-29 | ||
PCT/EP2014/056094 WO2014154769A1 (en) | 2013-03-29 | 2014-03-26 | Advanced cpv solar cell assembly process |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105247685A true CN105247685A (zh) | 2016-01-13 |
CN105247685B CN105247685B (zh) | 2017-10-27 |
Family
ID=48741373
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201480030798.2A Active CN105247685B (zh) | 2013-03-29 | 2014-03-26 | 先进的cpv太阳能电池组件处理 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10361326B2 (zh) |
EP (1) | EP2979300B1 (zh) |
CN (1) | CN105247685B (zh) |
FR (1) | FR3004002B1 (zh) |
WO (1) | WO2014154769A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107068786A (zh) * | 2016-12-28 | 2017-08-18 | 中国电子科技集团公司第十八研究所 | 太阳电池集成式双结二极管的结构设计及制造方法 |
CN113692651A (zh) * | 2019-04-09 | 2021-11-23 | 信越半导体株式会社 | 电子器件的制造方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20230335653A1 (en) * | 2021-09-29 | 2023-10-19 | The Boeing Company | Upright photovoltaic cell with front contacts |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57204180A (en) * | 1981-06-09 | 1982-12-14 | Mitsubishi Electric Corp | Gaas solar battery element |
EP0369666B1 (en) * | 1988-11-16 | 1995-06-14 | Mitsubishi Denki Kabushiki Kaisha | Solar cell |
US6278054B1 (en) * | 1998-05-28 | 2001-08-21 | Tecstar Power Systems, Inc. | Solar cell having an integral monolithically grown bypass diode |
AU2002329656A1 (en) * | 2001-07-27 | 2003-02-17 | Chu Chaw-Long | Solar cell having a bypass diode for reverse bias protection and method of fabrication |
US7592536B2 (en) * | 2003-10-02 | 2009-09-22 | The Boeing Company | Solar cell structure with integrated discrete by-pass diode |
US7732706B1 (en) * | 2004-09-17 | 2010-06-08 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Solar cell circuit and method for manufacturing solar cells |
US20070277875A1 (en) * | 2006-05-31 | 2007-12-06 | Kishor Purushottam Gadkaree | Thin film photovoltaic structure |
US20080110489A1 (en) * | 2006-11-14 | 2008-05-15 | Fareed Sepehry-Fard | Very High Efficiency Multi-Junction Solar Spectrum Integrator Cells, and the Corresponding System and Method |
US9331228B2 (en) * | 2008-02-11 | 2016-05-03 | Suncore Photovoltaics, Inc. | Concentrated photovoltaic system modules using III-V semiconductor solar cells |
EP2394106B1 (en) | 2008-12-30 | 2017-05-24 | Philips Lighting Holding B.V. | Position-adjustable solar-collecting window blind |
US8283558B2 (en) | 2009-03-27 | 2012-10-09 | The Boeing Company | Solar cell assembly with combined handle substrate and bypass diode and method |
US20110124146A1 (en) * | 2009-05-29 | 2011-05-26 | Pitera Arthur J | Methods of forming high-efficiency multi-junction solar cell structures |
US20110265857A1 (en) * | 2010-05-03 | 2011-11-03 | DuPont Apollo Ltd. | Monolithic integration of bypass diodes with a thin film solar module |
US8878048B2 (en) * | 2010-05-17 | 2014-11-04 | The Boeing Company | Solar cell structure including a silicon carrier containing a by-pass diode |
US8604330B1 (en) * | 2010-12-06 | 2013-12-10 | 4Power, Llc | High-efficiency solar-cell arrays with integrated devices and methods for forming them |
US8134217B2 (en) * | 2010-12-14 | 2012-03-13 | Sunpower Corporation | Bypass diode for a solar cell |
-
2013
- 2013-03-29 FR FR1352866A patent/FR3004002B1/fr not_active Expired - Fee Related
-
2014
- 2014-03-26 CN CN201480030798.2A patent/CN105247685B/zh active Active
- 2014-03-26 EP EP14713102.3A patent/EP2979300B1/en active Active
- 2014-03-26 US US14/780,473 patent/US10361326B2/en active Active
- 2014-03-26 WO PCT/EP2014/056094 patent/WO2014154769A1/en active Application Filing
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107068786A (zh) * | 2016-12-28 | 2017-08-18 | 中国电子科技集团公司第十八研究所 | 太阳电池集成式双结二极管的结构设计及制造方法 |
CN113692651A (zh) * | 2019-04-09 | 2021-11-23 | 信越半导体株式会社 | 电子器件的制造方法 |
Also Published As
Publication number | Publication date |
---|---|
FR3004002B1 (fr) | 2016-09-02 |
CN105247685B (zh) | 2017-10-27 |
US20160056318A1 (en) | 2016-02-25 |
US10361326B2 (en) | 2019-07-23 |
EP2979300B1 (en) | 2019-05-22 |
FR3004002A1 (fr) | 2014-10-03 |
EP2979300A1 (en) | 2016-02-03 |
WO2014154769A1 (en) | 2014-10-02 |
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Inventor after: Aulnette Cecile Inventor after: Krause Ralf Inventor after: DIMROTH FRANK Inventor after: Guiot Eric Inventor after: E Mazza Riera Inventor after: C drazek Inventor before: Aulnette Cecile Inventor before: Krause Ralf Inventor before: DIMROTH FRANK Inventor before: Graf Michael Inventor before: Guiot Eric Inventor before: E Mazza Riera Inventor before: C drazek |
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Effective date of registration: 20170417 Address after: French Boerning Applicant after: Soitec Silicon On Insulator Address before: French Boerning Applicant before: Soitec Silicon On Insulator Applicant before: Fraunhofer Ges Forschung |
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