CN105245189A - Low power semi-active and semi-passive broadband down mixer - Google Patents
Low power semi-active and semi-passive broadband down mixer Download PDFInfo
- Publication number
- CN105245189A CN105245189A CN201510625173.7A CN201510625173A CN105245189A CN 105245189 A CN105245189 A CN 105245189A CN 201510625173 A CN201510625173 A CN 201510625173A CN 105245189 A CN105245189 A CN 105245189A
- Authority
- CN
- China
- Prior art keywords
- nmos tube
- pmos
- grid
- mixer
- drain electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Amplifiers (AREA)
Abstract
The invention discloses a low power semi-active and semi-passive broadband down mixer. The low power semi-active and semi-passive broadband down mixer finishes a frequency mixing function by a current mirror amplifier (M1-M12) composed of four basic current mirrors and an embedded passive switch core (M17-M20). The current mirror amplifier is used for executing an input stage and an output stage of the mixer, and a two-input port and quad-output port structure of the current mirror amplifier is equivalent to a double-balanced topological structure of a traditional Gilbert mixer. The passive switch core is embedded between grids of input and output MOS (Metal Oxide Semiconductor) tubes of the current mirror amplifier, and the passive switch core has no DC bias current and does not consume voltage drops and introduce power consumption, so that the flicker noise and linearity of the mixer can be improved; meanwhile, a conduction resistor of the passive switch core MOS tube acts as a series peak resistor, so that the operation bandwidth of the mixer is expanded. The mixer does not adopt an inductance passive element but has the respective advantages of an active Gilbert mixer and a passive mixer, and the mixer can meet the performance requirement of a multi-standard radio frequency receiver.
Description
Technical field
The present invention relates to the active half passive wideband down-conversion mixer of a kind of low-power consumption half, it adopts current mirror amplifier and embedded passive switch core to complete mixing function, belongs to field of analog integrated circuit.
Background technology
In current wireless communication field, various communication standard, as 2G/3G/4G, WLAN, Bluetooth, UWB, GPS, RFID etc., all plays an important role in specific wireless communication field.Along with the development of wireless communication technology, many standard transceivers systematic research of simultaneously compatible distinct communication standards can become more and more urgent.Because many standard transceivers system needs compatible multiple different communication standard simultaneously, thus higher designing requirement be it is also proposed to its corresponding Transceiver RF Front-End circuit.
Down-conversion mixer is as the important composition module of multi-standard receiver radio-frequency front-end, and it is mainly used to realize frequency translation.In multi-standard receiver radio-frequency front-end, deposit due to multiple communication standard, down-conversion mixer demand fulfillment broadband operation characteristic, namely its operating frequency range will cover the frequency of multiple communication standard.Meanwhile, the noise factor of down-conversion mixer drastically influence the sensitivity of receiver, and the linearity affects the dynamic range of receiver, and its conversion gain to also determine in receiver frequency mixer post-module to the influence degree of systematic function.In addition, under the deep-submicron CMOS process of development, the supply voltage that down-conversion mixer design allows and power consumption also more and more lower.
In many standard radio frequencies receiver, broadband down-conversion mixer conventional is at present divided into active gilbert (Gilbert) frequency mixer and passive frequency mixer two class.
Active Gilbert frequency mixer is by inputting transconductance stage (M1-M2), switching stage (M3-M6), output load stage (R
l) and tail current source formation, as shown in Figure 1.Radio frequency (RF+ and RF-) input voltage signal is converted to current signal by the input transconductance stage of this frequency mixer, after switching stage completes mixing with current signal form and local oscillator (LO+ and LO-) signal, then current signal at load stage (R
l) convert voltage signal to and export for intermediate frequency (IF+ and IF-).Therefore, in the frequency conversion of Gilbert frequency mixer, occurred two unnecessary voltage-to-currents (V-I) and current-voltage (I-V) conversion, these unnecessary conversions introduce non-linear factor in frequency mixer.On the other hand, active Gilbert frequency mixer adopts the longitudinal change of current of metal-oxide-semiconductor stacked structure to complete frequency translation, although can obtain the port isolation characteristic that larger conversion gain becomes reconciled; But it does not support that technology generations is reduced, and can not meet low voltage circuit designing requirement, be difficult to reduce power consumption, also can produce more serious flicker (1/f) noise simultaneously.
Passive frequency mixer, as shown in Figure 2, adopt the horizontal change of current of electric capacity direct-coupling structure to complete frequency translation, it can reduce the stacking number of plies of metal-oxide-semiconductor, realizes low-voltage low-power design; Passive mixer switches level, without direct current, can reduce 1/f noise and improve the linearity; But it can not provide conversion gain, need very strong local oscillator driving power simultaneously.
Thus the object of the invention is to explore Wideband down-conversion mixer topological structure, meet the performance index such as operating frequency range, 1/f noise, power consumption, conversion gain, the linearity, interport isolation, to adapt to the performance requirement of many standard radio frequencies receiver simultaneously.
Summary of the invention
To achieve these goals, the present invention, on traditional active Gilbert frequency mixer and passive frequency mixer operation principle basis, proposes a kind of active half passive wideband down-conversion mixer of low-power consumption half based on 0.5 ~ 4.0GHz frequency range.This frequency mixer is based on current-mode circuit method for designing, current mirror amplifier (M1-M12) is used for performing the input stage of down-conversion mixer and output stage, and passive switch core (M17-M20) is embedded between the grid of current mirror amplifier constrained input metal-oxide-semiconductor.Current mirror amplifier and the seamless link of passive switch core become a half single active half passive Mixing elements, realize mixing function.
Compare with passive frequency mixer with traditional active Gilbert frequency mixer, the novel down-conversion mixer of invention has following significant advantage.
First, traditional active Gilbert frequency mixer comprises input transconductance stage, switching stage and output load stage three part, and three partial circuits are longitudinally superimposed, and the supply voltage of frequency mixer is the operating voltage sum of three partial circuits.And although the down-conversion mixer of invention also comprises three parts: Part I is the input transistors of current mirror amplifier, and Part II is passive switch core, and Part III is the output transistor of current mirror amplifier.But connect in cascade form between three parts of this down-conversion mixer, its operating voltage does not longitudinally superpose, and whole down-conversion mixer is two-layer metal-oxide-semiconductor structure, be applicable to low voltage and low power circuits designing requirement.
Secondly, the conducting resistance of active Gilbert mixer switches level metal-oxide-semiconductor can take certain voltage drop, can cause the increase of 1/f noise and the deterioration of linearity performance simultaneously.And the down-conversion mixer of invention, the metal-oxide-semiconductor in passive switch core is embedded between the grid of current mirror amplifier constrained input metal-oxide-semiconductor.There is not DC bias current in it, significantly improves 1/f noise and the dimension performance of frequency mixer; Attrition voltage does not fall simultaneously, does not introduce power consumption.More meaningfully, in passive switch core, the conducting resistance of metal-oxide-semiconductor is equivalent to a series connection peak resistance in optical mixing process, and it has expanded the bandwidth of operation of down-conversion mixer, meets the requirement of broadband mixer design.
Again, when after embedding passive switch core, the dual input of current mirror amplifier and four output port structural equivalents, in two balanced topology structures of traditional Gilbert frequency mixer, enable the broadband down-conversion mixer of invention take into account the respective advantage of active Gilbert frequency mixer and passive frequency mixer.In addition, this down-conversion mixer circuit structure is very simple, does not need to use the inductance element accounting for very large chip area, is applicable to low cost small size circuit design requirements.
Accompanying drawing explanation
Fig. 1 is traditional active Gilbert mixer architecture.
Fig. 2 is traditional passive frequency mixer structures.
Fig. 3 is the active half passive wideband down-conversion mixer schematic diagram of low-power consumption half of the present invention.
Fig. 4 is the current mirror amplifier for mixer input stage and output stage in the present invention.
Fig. 5 is the basic current mirror of band series connection peak resistance R.
Fig. 6 is the passive switch core be embedded in the present invention in current mirror amplifier.
Embodiment
As shown in Figure 3, it is based on current-mode circuit method for designing for the active half passive wideband down-conversion mixer of low-power consumption half that the present invention proposes.Current mirror amplifier (M1-M12) is used simultaneously in input stage and the output stage of frequency mixer, and as shown in Figure 4, its function is as the input transconductance stage of traditional Gilbert frequency mixer and output load stage.Input stage and output stage is completed by using current mirror amplifier, the output current of mutual conductance low noise amplifier can be directly connected to the input stage of frequency mixer, and simultaneously the output current of frequency mixer also can be directly inputted in the Current-mode Filter of next stage and goes.This method for designing eliminates unnecessary voltage-to-current (V-I) and current-voltage (I-V) conversion, improves the impact of these non-linear conversion on frequency mixer performance.
As can be seen from Figure 4, the current mirror amplifier combined by four basic current mirrors, it is made up of the differential configuration of two input ports and four output ports.Wherein, M1 and M4 is respectively as the input transistors of difference current mirror amplifier, and M2, M3 and M5, M6 are respectively as the output transistor of difference current mirror amplifier.That is, the current mirror amplifier that dual input four exports is made up of the basic current mirror that four are total to input between two.M7-M9 and M10-M12 serves as current source load and is used for biased four basic current mirror M1-M3 and M4-M6.In addition, M13-M14 and M15-M16 pipe by diode connected mode for M7-M9 and M10-M12 pipe provides bias voltage.All M1-M12 pipes are all biased in saturation operation region.
Difference current mirror amplifier is exported, difference current input signal i by two inputs four
in+and i
in-be exaggerated and become two to identical difference current output signal i
o1+, i
o2+and i
o1-, i
o2-, wherein i
o1+=i
o2+, i
o1-=i
o2-.Therefore, the current gain of dual input four current mirror output amplifier can be determined by the proportionality coefficient N of input transistors and output transistor in basic current mirror.
In order to increase the current gain of current mirror amplifier, can be come by the output transistor width increasing four basic current mirrors.But, there is certain compromise between the current gain of basic current mirror and bandwidth of operation.The current gain that current mirror amplifier is large will cause the decline of current mirror amplifier bandwidth of operation.The relation of current gain and bandwidth of operation is analyzed below for the basic current mirror shown in Fig. 5.In Figure 5, M1, M2 are the input and output transistor of basic current mirror, M7 and M8 is corresponding DC bias current source, and R is series connection peak resistance, i
in, i
ofor the input and output electric current of basic current mirror.
To the basic current mirror in Fig. 5, as R=0, current gain I
o(s)/I
in(s) and bandwidth of operation ω
-3dBcan be expressed as:
Wherein, g
m2/ g
m1≈ (W/L)
2/ (W/L)
1=N, g
mfor the mutual conductance of metal-oxide-semiconductor, C
gsfor gate-source parasitic capacitance, C
gdfor gate-drain parasitic capacitances, W/L is channel width-over-length ratio.As can be seen from formula (1) and formula (2), there is compromise between the current gain of current mirror amplifier and bandwidth of operation, large current gain will cause the decline of bandwidth of operation.
In order to the current gain that obtains and bandwidth of operation performance simultaneously, embed the series connection peak resistance R of an appropriate size in Figure 5, now current gain I
o(s)/I
in(s) and bandwidth of operation ω
-3dBbecome:
Can find out, after increasing the series connection peak resistance R of appropriate size, while not affecting current gain, can larger broadband response be obtained.In the broadband mixer proposed, this series connection peak resistance R can by the conducting resistance R in passive switch core
onsubstitute.
The down-conversion mixer switching stage part that the present invention proposes, it adopts the passive switch core of current-mode, as shown in Figure 6.Passive switch core is made up of four orthogonal NMOS tube M17-M20, and it is embedded between current mirror amplifier input transistors and the grid of output transistor.Passive switch core is used for the differential radio frequency current signal i of delivered current mirror amplifier input stage
rF+and i
rF-, with local oscillation signal v
lO+and v
lO-after mixing, then carry out the difference current intermediate frequency signal i of driven current mirror amplifier output stage
iF+and i
iF-.
As can be seen from Figure 6, passive switch core only processes the ac small signal electric current of input, and its signal transfer direction is mutually vertical with the supply voltage direction of current mirror amplifier.That is, passive switch core does not take direct current pressure drop, and the supply voltage of the down-conversion mixer of proposition is only decided by the bias voltage of current mirror amplifier, and the two-layer metal-oxide-semiconductor stepped construction of current mirror amplifier can meet the designing requirement of low-voltage completely.On the other hand, not consumed DC current in passive switch core, does not just need switching stage power consumption yet, thus can meet the design object of low-power consumption.This is one of passive switch core advantage of being applied in down-conversion mixer of the present invention.
For traditional passive frequency mixer, as shown in Figure 2, it needs to add ac coupling capacitor C between input transconductance stage and switching stage
c.Ac coupling capacitor C
ceffect in passive frequency mixer is the DC biasing current signal that Isolation input transconductance stage is amplified, and only transmits the ac current signal that it amplifies, makes switching stage metal-oxide-semiconductor be operated in degree of depth linear zone and meet V
dS=0.Under local oscillation signal drives, in switching stage, four orthogonal NMOS tube are by ac coupling capacitor C
ccarry out the on-off function of input transconductance stage to output loading, thus realize the mixing principle of passive frequency mixer.
And the passive switch core that the present invention proposes, it is embedded between current mirror amplifier input transistors and output transistor gates, as shown in Figure 6.Current mirror amplifier is made up of four basic current mirrors.Due to the natural characteristic of basic current mirror structure, between the input transistors of basic current mirror and output transistor gates, there is not DC bias current, between them, only transmit and copy the ac small signal electric current on both sides.That is, the ac coupling capacitor C that between basic current mirror input transistors and output transistor gates, existence one is equivalent
c.As shown in Figure 6, between current mirror amplifier input transistors and passive switch core M17-M20 also by ac coupling capacitor C equivalent for existence one
c.Due to C
ceffect, switch core M17-M20 pipe will be operated in degree of depth linear zone, meet V simultaneously
dS=0.Thus, the seamless embedding between current mirror amplifier and passive switch core connects, and makes the down-conversion mixer of proposition possess characteristic and the advantage of passive frequency mixer.This is the advantage two that passive switch core is applied in down-conversion mixer of the present invention.
In traditional active Gilbert frequency mixer and passive frequency mixer, in switching stage, four orthogonal NMOS tube are under the driving of local oscillation signal, complete input transconductance stage in turn and connect to the break-make of output load stage, thus realize mixing function.Metal-oxide-semiconductor in switching stage is equivalent to the conducting resistance that a desirable switch and a series connection resistance control by gate bias voltage in optical mixing process.In traditional active Gilbert frequency mixer, conducting resistance can take certain voltage drop, increases the difficulty of low voltage designs, and after the DC bias current that input transconductance stage is large simultaneously flows to switch core, conducting resistance can cause the increase of switching stage 1/f.In passive frequency mixer, the conducting resistance of switching stage also can cause the deterioration of linearity performance and the increase of 1/f.
And at the passive switch core that the present invention proposes, it is embedded between current mirror amplifier input transistors and output transistor gates.In passive switch core, the conducting resistance of metal-oxide-semiconductor can not introduce too much 1/f (will analyze in content below), but it brings the improvement of another performance.As shown in Figure 6, when the M17-M20 in passive switch core manage in turn turn-on and turn-off time, the conducting resistance (R of M17-M20 pipe
on) can be expressed as:
Wherein, V
gsfor the gate source voltage of metal-oxide-semiconductor in passive switch core, V
thfor the threshold voltage of metal-oxide-semiconductor, V
dsfor the drain-source voltage of metal-oxide-semiconductor.Under deep-submicron CMOS process, can by changing grid width W and the gate source voltage V of metal-oxide-semiconductor in passive switch core
gsselect suitable conducting resistance R
on.Make its R
onwhile guarantee switch performance, also can play in current mirror amplifier the effect of peak resistance of connecting, as what analyze in content above.Utilize conducting resistance R
on, improve the broadband performance of current mirror amplifier, expand the operating frequency range of the broadband down-conversion mixer proposed.This is the advantage three that passive switch core is applied in down-conversion mixer of the present invention.
In traditional active Gilbert frequency mixer, in switching stage, the flicker noise 1/f of metal-oxide-semiconductor depends primarily on the DC bias current size of switching tube.That is, the DC bias current reducing metal-oxide-semiconductor in switching stage can reduce the contribution of 1/f to frequency mixer output noise.In order to reduce 1/f, usually adding an Injection Current source at the common source Nodes of switching stage metal-oxide-semiconductor, allowing most of DC bias current of input transconductance stage flow into this current source, thus reducing the output 1/f of frequency mixer.But the shortcoming of this method is the DC bias current flowing through switching stage to be reduced, and the mutual conductance of its switching stage also will reduce; On the other hand, owing to adding extra Injection Current source, this also can introduce new noise source to frequency mixer.
The down-conversion mixer switching stage part that the present invention proposes adopts passive switch core.Passive switch core is embedded between current mirror amplifier input transistors and output transistor gates, and the DC bias current flowing through passive switch core is zero, so just fundamentally reduces the impact of switching stage metal-oxide-semiconductor flicker noise 1/f.
By current mirror amplifier (M1-M12), the radio frequency rf signal i of input
rF+and i
rF-under local oscillator LO signal drives, Direct Conversion is to baseband signal i
iF+and i
iF-.Local oscillator LO signal has been come by passive switch core M17-M20.Work as V
b+ v
lO+during for low level, switching tube M17, M20 are in off-state, and then switching tube closes on the contrary.Work as V
b+ v
lO-during for low level, switching tube M18, M19 are in off-state, and then switching tube closes on the contrary.
If the input radio frequency RF signal of frequency mixer is:
Local oscillator LO signal in passive switch core is:
Output IF signal then after frequency conversion can be expressed as:
Can see after above formula Fourier expansion, the input radio frequency signal i of current mirror amplifier
rF ±local oscillation signal v in passive switch core
lO ±under driving, alternation switch, achieves mixing function.
Claims (5)
1. the active half passive wideband down-conversion mixer of low-power consumption half, is characterized in that, comprises the current mirror amplifier be made up of four basic current mirrors, embedded passive switch core and DC offset voltage circuit; Wherein the constrained input transistor of current mirror amplifier is as the input stage of frequency mixer and output stage, and passive switch core is as the switching stage of frequency mixer, and both seamless links become a half single active half passive Mixing elements.
2. the active half passive wideband down-conversion mixer of a kind of low-power consumption half according to claim 1, is characterized in that, the input stage of described frequency mixer comprises the first NMOS tube, the 4th NMOS tube, the 7th PMOS, the tenth PMOS, the first electric capacity and the second electric capacity; One road RF+ of radio-frequency differential signal connects the positive pole of the first electric capacity, is input to the drain electrode of the first NMOS tube by the negative pole of the first electric capacity, the source ground of the first NMOS tube, and the grid of the first NMOS tube is connected with drain electrode; The drain electrode of the 7th PMOS is connected with the drain electrode of the first NMOS tube, and the source electrode of the 7th PMOS meets power supply VCC, and the grid of the 7th PMOS is connected by diode connected mode with DC offset voltage circuit; One road RF-of radio-frequency differential signal connects the positive pole of the second electric capacity, is input to the drain electrode of the 4th NMOS tube by the negative pole of the second electric capacity, the source ground of the 4th NMOS tube, and the grid of the 4th NMOS tube is connected with drain electrode; The drain electrode of the tenth PMOS is connected with the drain electrode of the 4th NMOS tube, and the source electrode of the tenth PMOS meets power supply VCC, and the grid of the tenth PMOS is connected by diode connected mode with DC offset voltage circuit.
3. the active half passive wideband down-conversion mixer of a kind of low-power consumption half according to claim 1, is characterized in that, the switching stage of described frequency mixer comprises mutually orthogonal the 17 NMOS tube, the 18 NMOS tube, the 19 NMOS tube, the 20 NMOS tube; 17 NMOS tube is connected with the grid of the 20 NMOS tube, and is connected to a road LO+ of local oscillator differential signal; 18 NMOS tube is connected with the grid of the 19 NMOS tube, and is connected to a road LO-of local oscillator differential signal; 17 NMOS tube is connected with the drain electrode of the 18 NMOS tube, and is connected to the grid of the first NMOS tube; 19 NMOS tube is connected with the drain electrode of the 20 NMOS tube, and is connected to the grid of the 4th NMOS tube; The source electrode of the 17 NMOS tube is connected with the grid of the second NMOS tube, and the source electrode of the 18 NMOS tube is connected with the grid of the 3rd NMOS tube; The source electrode of the 19 NMOS tube is connected with the grid of the 6th NMOS tube, and the source electrode of the 20 NMOS tube is connected with the grid of the 5th NMOS tube.
4. the active half passive wideband down-conversion mixer of a kind of low-power consumption half according to claim 1, it is characterized in that, the output stage of described frequency mixer comprises the second NMOS tube, the 3rd NMOS tube, the 5th NMOS tube, the 6th NMOS tube, the 8th PMOS, the 9th PMOS, the 11 PMOS, the 12 PMOS, the 3rd electric capacity and the 4th electric capacity; The source ground of the second NMOS tube, the 3rd NMOS tube, the 5th NMOS tube, the 6th NMOS tube, the source electrode of the 8th PMOS, the 9th PMOS, the 11 PMOS, the 12 PMOS meets power supply VCC; The drain electrode of the second NMOS tube, the 6th NMOS tube, the 8th PMOS, the 12 PMOS is connected, and is connected to the positive pole of the 4th electric capacity, is connected to a road IF-of middle frequency difference sub-signal by the negative pole of the 4th electric capacity; The drain electrode of the 3rd NMOS tube, the 5th NMOS tube, the 9th PMOS, the 11 PMOS is connected, and is connected to the positive pole of the 3rd electric capacity, is connected to a road IF+ of middle frequency difference sub-signal by the negative pole of the 3rd electric capacity; The grid of the 8th PMOS, the 9th PMOS is connected by diode connected mode with DC offset voltage circuit; The grid of the 11 PMOS, the 12 PMOS is connected by diode connected mode with DC offset voltage circuit.
5. the active half passive wideband down-conversion mixer of a kind of low-power consumption half according to claim 1, it is characterized in that, the DC offset voltage circuit of described frequency mixer comprises the 14 NMOS tube, the 16 NMOS tube, the 13 PMOS, the 15 PMOS, the 5th electric capacity and the 6th electric capacity; The source electrode of the 13 PMOS, the 15 PMOS meets power supply VCC, the source ground of the 14 NMOS tube, the 16 NMOS tube; The minus earth of the 5th electric capacity, positive pole is connected to the drain electrode of the 13 PMOS and the 14 NMOS tube, the minus earth of the 6th electric capacity, and positive pole is connected to the drain electrode of the 15 PMOS and the 16 NMOS tube; 13 PMOS grid is connected with drain electrode, and is connected to drain electrode and the grid of the 14 NMOS tube; 13 PMOS grid is connected with the grid of the 7th PMOS, the 8th PMOS, the 9th PMOS, for the 7th PMOS, the 8th PMOS, the 9th PMOS provide DC offset voltage; 15 PMOS grid is connected with drain electrode, and is connected to drain electrode and the grid of the 16 NMOS tube; 15 PMOS grid is connected with the grid of the tenth PMOS, the 11 PMOS, the 12 PMOS, for the tenth PMOS, the 11 PMOS, the 12 PMOS provide DC offset voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510625173.7A CN105245189A (en) | 2015-09-28 | 2015-09-28 | Low power semi-active and semi-passive broadband down mixer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510625173.7A CN105245189A (en) | 2015-09-28 | 2015-09-28 | Low power semi-active and semi-passive broadband down mixer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105245189A true CN105245189A (en) | 2016-01-13 |
Family
ID=55042716
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510625173.7A Pending CN105245189A (en) | 2015-09-28 | 2015-09-28 | Low power semi-active and semi-passive broadband down mixer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105245189A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106877821A (en) * | 2017-02-21 | 2017-06-20 | 湖南师范大学 | A kind of wide band radio-frequency frequency mixer based on current-mode active device |
| CN108712151A (en) * | 2018-08-14 | 2018-10-26 | 四川益丰电子科技有限公司 | A kind of high performance broadband active double balanced mixer |
| CN108768341A (en) * | 2018-03-23 | 2018-11-06 | 湖南师范大学 | A kind of miniature power splitter based on the tunable active inductance of high q-factor |
| CN108964620A (en) * | 2018-07-05 | 2018-12-07 | 湖南师范大学 | A kind of New Active inductance based on collapsible Cascode structure |
| CN112383280A (en) * | 2020-11-27 | 2021-02-19 | 成都信息工程大学 | Ku-waveband low-power-consumption CMOS low-noise amplifier circuit |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101188402A (en) * | 2007-12-20 | 2008-05-28 | 北京航空航天大学 | A low-voltage frequency mixer |
| CN101662261A (en) * | 2009-08-12 | 2010-03-03 | 东南大学 | High-linearity folding mixer |
-
2015
- 2015-09-28 CN CN201510625173.7A patent/CN105245189A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101188402A (en) * | 2007-12-20 | 2008-05-28 | 北京航空航天大学 | A low-voltage frequency mixer |
| CN101662261A (en) * | 2009-08-12 | 2010-03-03 | 东南大学 | High-linearity folding mixer |
Non-Patent Citations (1)
| Title |
|---|
| 万求真: "低压低功耗CMOS收发机射频前端电路的设计与研究", 《中国博士学位论文全文数据库 信息科技辑》 * |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106877821A (en) * | 2017-02-21 | 2017-06-20 | 湖南师范大学 | A kind of wide band radio-frequency frequency mixer based on current-mode active device |
| CN106877821B (en) * | 2017-02-21 | 2019-11-22 | 湖南师范大学 | A kind of wide band radio-frequency frequency mixer based on current-mode active device |
| CN108768341A (en) * | 2018-03-23 | 2018-11-06 | 湖南师范大学 | A kind of miniature power splitter based on the tunable active inductance of high q-factor |
| CN108768341B (en) * | 2018-03-23 | 2021-09-14 | 湖南师范大学 | Miniature power divider based on high-Q-value tunable active inductor |
| CN108964620A (en) * | 2018-07-05 | 2018-12-07 | 湖南师范大学 | A kind of New Active inductance based on collapsible Cascode structure |
| CN108964620B (en) * | 2018-07-05 | 2022-01-28 | 湖南师范大学 | Active inductor based on folding Cascode structure |
| CN108712151A (en) * | 2018-08-14 | 2018-10-26 | 四川益丰电子科技有限公司 | A kind of high performance broadband active double balanced mixer |
| CN108712151B (en) * | 2018-08-14 | 2023-12-15 | 四川益丰电子科技有限公司 | High-performance broadband active double-balanced mixer |
| CN112383280A (en) * | 2020-11-27 | 2021-02-19 | 成都信息工程大学 | Ku-waveband low-power-consumption CMOS low-noise amplifier circuit |
| CN112383280B (en) * | 2020-11-27 | 2023-07-04 | 成都信息工程大学 | Ku-band low-power-consumption CMOS low-noise amplifier circuit |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102163954B (en) | Low-voltage low-noise wideband mixer | |
| CN105245189A (en) | Low power semi-active and semi-passive broadband down mixer | |
| CN103532493B (en) | A kind of Low-power-consumptiohigh-gain high-gain broadband frequency mixer | |
| US8121579B2 (en) | Active mixer circuit and a receiver circuit or a millimeter-wave communication unit using it | |
| CN107743021B (en) | High-mismatch-resistance high-efficiency power amplifier based on transistor stacking technology | |
| WO2016145950A1 (en) | Single-ended input and double-balanced passive mixer | |
| CN206099903U (en) | Active mixer of high linearity high -gain | |
| CN104270100B (en) | A kind of low-power consumption low-noise amplifier for strengthening technology using positive feedback technique and active transconductance | |
| CN102347780B (en) | Radio frequency receiving front-end circuit with adjustable gain | |
| CN106385236A (en) | Active frequency mixer with high linearity and high gain and method | |
| CN104124923B (en) | A kind of low-noise mixer circuit | |
| CN102638227A (en) | Ultra-wideband frequency mixer circuit with on-chip active balanced-unbalanced converter | |
| CN105577122A (en) | High-linearity active double-balanced mixer | |
| CN104065346A (en) | Broadband low noise amplifier circuit based on cross-coupled feedback | |
| CN205566227U (en) | Multiplexing type radio frequency amplifier of electric current | |
| CN202068377U (en) | Low-voltage low-noise broadband mixer | |
| CN105071778B (en) | A kind of Terahertz power amplifier realized based on CMOS technology | |
| CN106026928A (en) | Low-voltage single-balancing current multiplexing passive mixer | |
| Wan et al. | Design of a low voltage highly linear 2.4 GHz up-conversion mixer in 0.18 μm CMOS technology | |
| CN109379047A (en) | A kind of no on-chip inductor low-power consumption high linearity double balanced mixer | |
| CN106559042A (en) | The low-noise amplifier being applied under low-voltage | |
| CN104954031A (en) | Noise elimination broadband radio frequency receiving front-end | |
| CN111934632A (en) | Ultra-wideband high-power amplifier | |
| CN101610067A (en) | Frequency mixer | |
| Rahman et al. | A 0.7 V 194µW 31dB FOM 2.3–2.5 GHz RF frontend for WBAN with mutual noise cancellation using passive coupling |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20160113 |