CN105226110B - Solar cell element - Google Patents
Solar cell element Download PDFInfo
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- CN105226110B CN105226110B CN201410294678.5A CN201410294678A CN105226110B CN 105226110 B CN105226110 B CN 105226110B CN 201410294678 A CN201410294678 A CN 201410294678A CN 105226110 B CN105226110 B CN 105226110B
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Abstract
A solar cell element comprises a substrate with first diffusion regions and second diffusion regions, first finger electrodes, second finger electrodes, first patterned insulation layers, second patterned insulation layers, a first bus electrode and a second bus electrode. The first bus electrode is configured on the first finger electrodes and over the first diffusion regions, and is further configured on the first patterned insulation layers and over the second finger electrodes and the second diffusion regions. The second bus electrode is configured on the second finger electrodes and over the second diffusion regions, and is further configured on the second patterned insulation layer and over the first finger electrodes and the first diffusio regions.
Description
Technical field
The invention relates to a kind of solar cell device, and in particular to a kind of rear-face contact type solar-electricity
The electrode structure of pond element.
Background technology
For traditional solar battery structure, Top electrode is configured at the upper surface of silicon substrate, and bottom electrode is configured at
The lower surface of silicon substrate.But the upper surface of silicon substrate is in order to receive the irradiation of sunlight, therefore in the Top electrode of upper surface
Then can shaded portions incident ray, thus reduce solaode photoelectric transformation efficiency.Therefore current technology then develops
Go out and Top electrode is moved to the lower surface of silicon substrate so that upper/lower electrode (or claiming p-type electrode and n-type electrode) is together configured at silicon substrate
The lower surface of plate, the solaode with this kind of structure is referred to as back contact solar battery (Back Contact Solar
Cell).Back contact solar battery is broadly divided into four kinds of structures：Interdigital formula back electrode solaode
(Interdigitated Back Contact, abbreviation IBC), emitter-base bandgap grading penetration back electrode solaode (Emitter Wrap
Through, abbreviation EWT), metal piercing formula back electrode solaode (Metallization Wrap Through, referred to as
MWT) with metal around side formula back electrode solaode (Metallization Wrap Around, abbreviation MWA), wherein to hand over
Finger formula back electrode solaode is relatively conventional.
The top view of tradition shown in Figure 1 interdigital formula back electrode solaode 100.As shown in figure 1, tradition is too
Sun can comprise N-type diffusion region 111, p type diffusion region 121, N-type bus electrode 112, p-type bus electrode 122, plural bar by battery 100
N-type finger electrode 113 and plural bar p-type finger electrode 123.Above-mentioned N-type diffusion region 111 arranges for pectination, p type diffusion region 121
Then it is surrounded on around N-type diffusion region 111.Additionally, aforementioned p-type bus electrode 122 is all configured with plural bar p-type finger electrode 123
On p type diffusion region 121 and three is electrically connected with each other.Above-mentioned N-type bus electrode 112 is equal with plural bar N-type finger electrode 113
It is configured on N-type diffusion region 111 and three is electrically connected with each other.
Additionally, for interdigital formula back electrode solaode 100, when light irradiates silicon substrate upper surface and creates
Electronics electricity hole to afterwards, assemble toward N-type diffusion region 111 by electrons, and electric hole then can be assembled toward p type diffusion region 121.However, for
Electronics electricity hole produced by the silicon substrate of N-type diffusion region 111 overcentre to for, if electric hole will be moved expanding to p-type
The distance in scattered area 121, then with respect to electronics to move to N-type diffusion region 111 below distance relatively far away from.Additionally, it is right
For electronics electricity hole produced by the silicon substrate in p type diffusion region 121 overcentre, if electronics will move to N-type and expand
The distance in scattered area 111, then the distance that will move to p type diffusion region 121 below compared to electric hole is come relatively far away from.It is worth
It is noted that in N-type silicon substrate, substrate surface is belonged to minority carrier by hole electric produced by light irradiation, and electronics then belongs to
Most carriers.If the area of therefore N-type diffusion region 111 is excessive, so that electric hole will be moved to the distance of p type diffusion region 121
Long, then minority carrier (electric hole) is easy in moving process loss so that short circuit current (short circuit
Current, abbreviation Isc) reduce, and then affect the efficiency of solaode.If but reduce the area of N-type diffusion region 111, can
The conduction resistance of the most carrier of impact.Additionally, the area of larger p type diffusion region 121 is conducive to collecting more minority carriers
To lift Isc, and then lift the photoelectric transformation efficiency of solaode.But larger p type diffusion region 121 can make electronics move
Move elongated to the distance of N-type diffusion region 111, when the resistance of electronics movement becomes big, then can reduce fill factor, curve factor (Fill Factor,
Abbreviation FF), and then reduce photoelectric transformation efficiency.
Manufacturer is therefore had to propose a kind of technical scheme, to solve excessive N-type diffusion zone or excessive below bus electrode
The problem that led to of p type diffusion region domain.The structural representation of the solar cell device that Fig. 2A is proposed by SunPower company
Figure.Fig. 2 B is the series welding structural representation of two groups of solar cell devices.Please refer to Fig. 2A.SunPower company is proposed
Solar cell device 200 includes bus electrode 202 and finger electrode 204.Rectangular compared to tradition large-area conflux
Electrode, then bus electrode 202 is dwindled into several square patterns and is configured at solar cell device by SunPower company proposition
200 marginal area.In other words, when the area of bus electrode 202 reduces it is meant that being located at the expansion of bus electrode 202 lower section
The area in scattered region also can reduce simultaneously, so can solve the excessive N-type diffusion zone in bus electrode 202 lower section or excessive P
The problem that type diffusion zone is led to.However, the zone line in above-mentioned solar cell device 200 has no any bus electrode
202.Therefore for electrons or holes, from finger electrode 204 converge to bus electrode 202 distance elongated.Such then
It is unfavorable for the transmission of electrons or holes.Additionally, because the bus electrode 202 reducing of solar cell device 200 configures in element
Edge, the finger electrode 204 therefore in the marginal area of solar cell device 200 needs to rearrange design, in order to
Finger electrode 204 is enable to be connected directly to the square bus electrode 202 reducing.
Furthermore, please also refer to Fig. 2 B.Because the particular design of above-mentioned bus electrode 202 is so that have solaode unit
Cannot be gone here and there using traditional series welding technology between the cell piece of part 200a and the cell piece with solar cell device 200b
Connect bus electrode 202 each other, therefore need the welding 206 of collocation particular design just to enable the concatenation of two cell pieces.
Therefore it provides a kind of electrode structure of the solaode of improvement, and obtain N-type diffusion region area and p-type diffusion
The design optimization of area's area ratio, to lift the photoelectric transformation efficiency of solaode, for developing the main spirits of this case.
Content of the invention
The present invention proposes a kind of solar cell device, to lift the photoelectric transformation efficiency of solaode.
For reaching above-mentioned advantage or other advantages, one embodiment of the invention proposes a kind of solar cell device, including base
Plate, the first finger electrode, the second finger electrode, the first patterned insulation layer, the second patterned insulation layer, the first bus electrode with
Second bus electrode.Aforesaid substrate has the first diffusion region and at least one second diffusion region, and the wherein first diffusion region is surrounded on
Around second diffusion region.Above-mentioned first finger electrode is configured on the first diffusion region and is electrically connected at the first diffusion region.Above-mentioned
Second finger electrode is configured on the second diffusion region and is electrically connected at the second diffusion region.Above-mentioned first patterned insulation layer configuration
Above part second diffusion region with part second finger electrode on.Above-mentioned second patterned insulation layer is configured at part first and expands
Above scattered area with part first finger electrode on.Above-mentioned first bus electrode is configured on the first patterned insulation layer, part
In one finger electrode with part first diffusion region above, and be electrically connected with the first finger electrode.Above-mentioned second bus electrode configuration
On the second patterned insulation layer, above part second diffusion region with part second finger electrode on, and be electrically connected with the second finger
Shape electrode.
The present invention separately proposes a kind of solar cell device, including substrate, patterned passivation layer, the first finger electrode, the
Two finger electrodes, the first patterned insulation layer, the second patterned insulation layer, the first bus electrode and the second bus electrode.Above-mentioned
Substrate has the first diffusion region and at least one second diffusion region, and the wherein first diffusion region is surrounded on around the second diffusion region.On
State patterned passivation layer be configured on the first diffusion region with the second diffusion region on.Above-mentioned first finger electrode is configured at the first diffusion
In area and be electrically connected at the first diffusion region.Above-mentioned second finger electrode part is configured on the second diffusion region and part is configured at
Above first diffusion region, part second finger electrode being wherein configured on the second diffusion region is electrically connected at the second diffusion region,
It is configured at and further included patterned passivation layer between part second finger electrode above the first diffusion region and the first diffusion region.On
State the first patterned insulation layer be configured above part second diffusion region with part second finger electrode on.Above-mentioned second patterning
Insulating barrier be configured above part first diffusion region with part first finger electrode on.Above-mentioned first bus electrode is configured at first
On patterned insulation layer, in part first finger electrode with part first diffusion region above, and be electrically connected with described first finger-like
Electrode.And above-mentioned second bus electrode be configured on the second patterned insulation layer, above part second diffusion region, part second
In finger electrode with patterned passivation layer above, and the second bus electrode is electrically connected at the second finger electrode.
In sum, the present invention extends to N-type finger electrode and N-type diffusion region below p-type bus electrode, and by P
Type finger electrode and p type diffusion region extend to below N-type bus electrode, to solve to only have N-type below traditional N-type bus electrode
Only has p type diffusion region below diffusion region and the excessive problem caused by N-type diffusion region, and traditional p-type bus electrode
And the problem caused by excessive p type diffusion region.And, the present invention also can reduce under N-type bus electrode or p-type bus electrode
The displacement of the electric hole of side or electronics and transfer impedance, and then lift the photoelectric transformation efficiency of solaode.Additionally, having
Welding manner between two cell pieces of the solar cell device of the present invention, compatible in traditional series welding technology.
Brief description
Fig. 1 is the top view of traditional interdigital formula back electrode solaode 100.
Fig. 2A is the structural representation of the solar cell device that SunPower company is proposed.
Fig. 2 B is the series welding structural representation of two groups of solar cell devices.
Fig. 3 A is the structure top view of the solar cell device of one embodiment of the invention.
Fig. 3 B is the profile along a-a ' tangent line of Fig. 3 A.
Fig. 3 C is the profile along b-b ' tangent line of Fig. 3 A.
Fig. 4 A is the top view of the solar battery structure of one embodiment of the invention.
Fig. 4 B is the profile along c-c ' tangent line of Fig. 4 A.
Fig. 4 C is the profile along d-d ' tangent line of Fig. 4 A.
Specific embodiment
For the present invention aforementioned and other technology contents, feature and effect, one preferable with reference to schema in following cooperation
In the detailed description of embodiment, can clearly present.
Fig. 3 A is the structure top view of the solar cell device of one embodiment of the invention.Fig. 3 B is Fig. 3 A along a-a '
The profile of tangent line.Fig. 3 C is the profile along b-b ' tangent line of Fig. 3 A.Please also refer to Fig. 3 A and Fig. 3 B.The sun of the present invention
Energy cell device 300 includes having the first diffusion region 312 and the substrate 310 of at least one the second diffusion region 313, the first finger-like are electric
Pole 342, the second finger electrode 343, the first patterned insulation layer 352, the second patterned insulation layer 353, the first bus electrode 362
With the second bus electrode 363.In figure 3 a, diffusion region 313, plural bar the second finger electrode 343 and plural number be ranked second with plural number
Bar the first finger electrode 342 is to explain example, but the present invention is not limited thereto.Additionally, above-mentioned solar cell device 300
Rear-face contact type solaode in this way.Therefore, aforesaid substrate 310 for example also includes sensitive surface S1 and shady face S2.Wherein
Sensitive surface S1 is in order to receive the irradiation of sunlight, and sensitive surface S1 is rough surface, to lift the absorptivity of sensitive surface S1.This
Outward, above-mentioned first diffusion region 312 and the second diffusion region 313 are configured at away from the substrate 310 of sensitive surface S1.Aforesaid substrate 310
For example, N-type silicon substrate.
Please refer to Fig. 3 A.The first above-mentioned diffusion region 312 is surrounded on plural number and ranked second around diffusion region 313, and each
Individual second diffusion region 313 for example includes the first long area 3132 and the second short area 3133, and the wherein first long area 3132 is short with second
Area 3133 is connected.Above-mentioned first diffusion region 312 is emitter-base bandgap grading diffusion region, produced after sunlight sensitive surface S1 in order to collect
Minority charge carriers (for example electric hole).Above-mentioned second diffusion region 313 is base diffusion area, in order to collect sunlight substrate
Produced majority electric charge carrier (such as electronics) after 310 sensitive surface S1.Additionally, above-mentioned emitter-base bandgap grading diffusion region is, for example, p-type mixing
Miscellaneous area or title p type diffusion region, and base diffusion area is, for example, n-type doping area or title N-type diffusion region.Additionally, above-mentioned first long area
3132 the first length L1 is more than second length L2 in the second short area 3133, and the width in the first long area 3132 and the second short area 3133
Degree is different.
Please continue to refer to Fig. 3 A.Above-mentioned first finger electrode 342 is configured on the first diffusion region 312 and is electrically connected at
One diffusion region 312, the wherein first finger electrode 342 is p-type finger electrode.Above-mentioned second finger electrode 343 is configured at the second expansion
In scattered area 313, and it is electrically connected at the second diffusion region 313, the wherein second finger electrode 343 is N-type finger electrode.Additionally, on
State the first patterned insulation layer 352 to be configured in part the second diffusion region 313 top and part the second finger electrode 343, and directly
Contact the second finger electrode 343.And, the second patterned insulation layer 353 is configured at part the first diffusion region 312 top and portion
Divide in the first finger electrode 342, and directly contact the first finger electrode 342.For more detailed, the first patterned insulation layer
352 are configured above the long area 3132 of part first of the second diffusion region 313, and are configured at the part positioned at the first long area 3132
In two finger electrodes 343.And, the part first that the second patterned insulation layer 353 is configured at neighbouring second short area 3133 spreads
In part first finger electrode 342 in area 312 top and neighbouring second short area 3133.
It is noted that because the first diffusion region 312 is adjacent to the second diffusion region 313, and the second diffusion region 313
Narrower width.And, part the first diffusion region 312 in the neighbouring second short area 3133 forming the second patterned insulation layer 353
During processing procedure in part first finger electrode 342 in top and neighbouring second short area 3133, it is generally disposed in single the
The width of the second patterned insulation layer 353 in one finger electrode 342 can be equal or slightly larger than two adjacent second diffusion regions 312 it
Between the first diffusion region 312 width.So make the second patterning insulation in order to avoid the alignment error during processing procedure
Layer 353 covers the second finger electrode 343 because of error deviation, then the present invention proposes the first width W1 example in the first long area 3132
As the second width W2 in the second short area 3133 can be less than or equal to.So can lift elements yield.And in a preferred embodiment
In, above-mentioned first width W1 is for example between 200～500 microns.In other embodiments of the invention, the second width W2 example
As can be between 300～600 microns, but under different process conditions and processing environment, the scope of the second width W2 can be entered
Row fine setting, therefore the present invention is not limited with above-mentioned.
Please continue to refer to Fig. 3 A.Furthermore, above-mentioned first bus electrode 362 is configured on the first patterned insulation layer 352, portion
In point the first finger electrode 342 with part the first diffusion region 312 above.And, the second bus electrode 363 is configured at the second pattern
Change on insulating barrier 353, above part the second diffusion region 313 and in part the second finger electrode 343.Additionally, above-mentioned first confluxes
Electrode 362 is electrically connected at plural bar the first finger electrode 342, in order to collect the electricity from plural bar the first finger electrode 342
Stream, the wherein first bus electrode 362 is p-type bus electrode.Above-mentioned second bus electrode 363 is electrically connected at plural bar second and refers to
Shape electrode 343, in order to collect the electric current from plural bar the second finger electrode 343, the wherein second bus electrode 363 converges for N-type
Stream electrode.
It should be noted that be configured with the first diffusion region 312 below the first bus electrode 362 and positioned at the first pattern simultaneously
Change the second diffusion region 313 of insulating barrier 352 lower section.And, it is configured with plural bar first below the first bus electrode 362 more simultaneously
Finger electrode 342 and plural bar the second finger electrode 343 positioned at the first patterned insulation layer 352 lower section.Wherein, above-mentioned first
Patterned insulation layer 352 electrically isolates from the first bus electrode 362 in order to make the second finger electrode 343.Additionally, second confluxes electricity
Also it is configured with the second diffusion region 313 and the first diffusion region positioned at the second patterned insulation layer 353 lower section below pole 363 simultaneously
It is configured with plural bar the second finger electrode 343 below 312, and the second bus electrode 363 to pattern with positioned at second more simultaneously
Plural bar first finger electrode 342 of insulating barrier 353 lower section.Wherein, above-mentioned second patterned insulation layer 353 is in order to make the first finger
Shape electrode 342 electrically isolates from the second bus electrode 363.Therefore, except being configured with below second bus electrode 363 of the present invention
Second diffusion region 313, further includes and is configured with the first diffusion region 312, so then can solve below traditional N-type bus electrode only
N-type diffusion region and the excessive problem caused by N-type diffusion region.Additionally, below first bus electrode 362 of the present invention except
It is configured with outside the first diffusion region 312, further includes and be configured with the second diffusion region 313, so then can solve traditional p-type and conflux electricity
Only has the problem caused by p type diffusion region and excessive p type diffusion region below pole.
Furthermore it is noted that the first bus electrode 362 of having of the solar cell device 300 of the present invention with
Second bus electrode 363 is traditional design, therefore has between two cell pieces of solar cell device 300 of the present invention
Bus electrode each other can be concatenated using traditional series welding technology, and the welding of particular design of needn't arranging in pairs or groups.
Refer to Fig. 3 B.Fig. 3 B is the profile along a-a ' tangent line of Fig. 3 A.The solar cell device 300 of the present invention removes
Have outside said elements, for example, also include patterned passivation layer 320.Above-mentioned patterned passivation layer 320 is configured at first
Diffusion region 312 and the surface S3 away from sensitive surface S1 of the second diffusion region 313, in order to protect the first diffusion region 312 and the second expansion
Scattered area 313.Above-mentioned first finger electrode 342 and the second finger electrode 343 run through patterned passivation layer 320 and distinguish directly contact
First diffusion region 312 and the second diffusion region 313.It should be noted that in figure 3b with the first finger electrode 342 of same widths
With the second finger electrode 343 as explaining example, but visual process conditions demand is adjusting the width ratio between different finger electrodes
Example, the present invention is not limited with above-mentioned.
Please continue to refer to Fig. 3 B.Additionally, above-mentioned second bus electrode 363 directly contact be electrically connected at plural bar second
Finger electrode 343.And, be can be seen that by Fig. 3 B, below the second bus electrode 363 (i.e. N-type bus electrode), be configured with simultaneously
Two diffusion regions 313 and the first diffusion region 312 positioned at the second patterned insulation layer 353 lower section.Such then traditional N-type can be solved
Only have N-type diffusion region and the excessive problem caused by N-type diffusion region below bus electrode.And, second remittance of the present invention
It is configured with plural bar the second finger electrode 343 and positioned at the second patterned insulation layer 353 lower section below stream electrode 363 more simultaneously
Plural bar the first finger electrode 342.
It should be noted that please also refer to Fig. 3 A and Fig. 3 B.If only the first diffusion region 312 is extended to second to conflux
Below electrode 363, but the first finger electrode 342 is not also extended to relatively the first diffusion of the second bus electrode 363 lower section
Area 312, then the minority charge carriers producing in the first diffusion region 312 below the second bus electrode 363 (for example electric hole) must
After a segment distance must being moved in the first diffusion region 312, could be connected with the first finger electrode 342, so then be unfavorable for few
The transmission of number electric charge carrier.Therefore the present invention proposes to extend to the first finger electrode 342 the of second bus electrode 363 lower section
The structure of one diffusion region 312, in order to make the minority producing in the first diffusion region 312 below the second bus electrode 363 electric
Load (for example electric hole) can flow directly to the first finger electrode 342 of the second bus electrode 363 lower section, so can relatively drop
The displacement in low electricity hole and transfer impedance, to lift photoelectric transformation efficiency.
Refer to Fig. 3 C.Fig. 3 C is the profile along b-b ' tangent line of Fig. 3 A.Be can be seen that by Fig. 3 C, the first bus electrode
362 are directly contacted with plural bar the first finger electrode 342.And, first bus electrode 362 of the present invention (i.e. conflux electricity by p-type
Pole) below be configured with simultaneously the first diffusion region 312 (i.e. p type diffusion region) with positioned at the of the first patterned insulation layer 352 lower section
Two diffusion regions 313 (i.e. N-type diffusion region).Such then only p type diffusion region and mistake can be solved below traditional p-type bus electrode
Problem caused by big p type diffusion region.Additionally, be configured with plural bar below first bus electrode 362 of the present invention more simultaneously
First finger electrode 342 and plural bar the second finger electrode 343 positioned at the first patterned insulation layer 352 lower section.So tie
Structure configure, can allow in the second diffusion region 313 below the first bus electrode 362 produce most electric charge carriers (such as electronics)
The second finger electrode 343 of the first bus electrode 362 lower section can be transferred directly to.So can relative reduction electronics displacement
With transfer impedance, to lift photoelectric transformation efficiency.
Fig. 4 A is the top view of the solar battery structure of one embodiment of the invention.Fig. 4 B is Fig. 4 A along c-c ' tangent line
Profile.Fig. 4 C is the profile along d-d ' tangent line of Fig. 4 A.Please refer to Fig. 4 A.Solaode unit compared to Fig. 3 A
Part 300 has second diffusion region 313 in the first long area 3132 and the first short area 3133, and maximum difference is the sun of the present invention
Second diffusion region 413 of energy battery 400 has a plurality of discontinuity zones (such as circle, tetragon etc.) and bar area 413s.
A plurality of discontinuous circle 413c using in Fig. 4 A are as the explanation example of a plurality of discontinuity zones, but the present invention is not with this
It is limited.
Please also refer to Fig. 4 A and Fig. 4 B.The solaode 400 of the present invention includes thering is the first diffusion region 412 and second
The substrate 410 of diffusion region 413, patterned passivation layer 420, the first finger electrode 442, the second finger electrode 443, first pattern
Insulating barrier 452, the second patterned insulation layer 453, the first bus electrode 462 and the second bus electrode 463.In Figure 4 A, with multiple
It is to explain example that number ranked second diffusion region 413, plural bar the second finger electrode 443 and plural bar the first finger electrode 442, but this
Invention is not limited thereto.Additionally, above-mentioned solaode 400 is, for example, rear-face contact type solaode.Therefore, above-mentioned base
Plate 410 for example also includes sensitive surface S1 and shady face S2.Additionally, above-mentioned first diffusion region 412 and the second diffusion region 413 configure
In the substrate 410 away from sensitive surface S1.Aforesaid substrate 410 is, for example, N-type silicon substrate.
Please refer to Fig. 4 A.Above-mentioned first diffusion region 412 is surrounded on plural number and ranked second around diffusion region 413, and every 1
Two diffusion regions 413 for example include a plurality of discontinuous circle 413c and bar area 413s.And the second adjacent diffusion region
413 circle 413c can be parallel to each other side by side or be staggered, in Figure 4 A to be staggered as explaining example, but this
Invention is not limited.If it is noted that the interlaced arrangement of circle 413c of adjacent second diffusion region 413, its
Bar area 413s respectively then assumes the configuration that one is long and the other is short respectively, as shown in Figure 4 A.
Please also refer to Fig. 4 A and Fig. 4 B.Above-mentioned patterned passivation layer 420 is configured at and expands with second on the first diffusion region 412
In scattered area 413.For more detailed, patterned passivation layer 420 is configured at the remote of the first diffusion region 412 and the second diffusion region 413
On the surface S3 of sensitive surface S1.Additionally, above-mentioned first diffusion region 412 is p-type doped region, the second diffusion region 413 is n-type doping
Area.Additionally, above-mentioned first finger electrode 442 is configured on the first diffusion region 412 and is electrically connected with the first diffusion region 412, wherein
First finger electrode 442 is p-type finger electrode.Above-mentioned second finger electrode 443 is configured on the second diffusion region 413 and electrically connects
Connect the second diffusion region 413, the wherein second finger electrode 443 is N-type finger electrode.It should be noted that above-mentioned each second
Finger electrode 443 part is configured on the second diffusion region 413 and part is configured above the first diffusion region 412, is wherein configured at
Part the second finger electrode 443 on second diffusion region 413 is electrically connected at the second diffusion region 413, and is configured at the first diffusion
Further include patterned passivation layer 420 between part second finger electrode 443 of area 412 top and the first diffusion region 412, made the
Two finger electrodes 443 are electrically insulated from the first diffusion region 412.
Continuing with reference to Fig. 4 A and Fig. 4 B.Above-mentioned first patterned insulation layer 452 is configured at part second diffusion region
On 413 tops and part the second finger electrode 443, and the second patterned insulation layer 453 is configured on part the first diffusion region 412
In side and part the first finger electrode 442.Additionally, the first bus electrode 462 be configured on the first patterned insulation layer 452, portion
In point the first finger electrode 442 with part the first diffusion region 412 above.And the first bus electrode 462 is electrically connected with the first finger-like
Electrode 442.Wherein first bus electrode 462 is p-type bus electrode.Above-mentioned second bus electrode 463 is configured at the second patterning
On insulating barrier 453, part the second diffusion region 413 top, in part the second finger electrode 443 with patterned passivation layer 420 above.
And the second bus electrode 463 is electrically connected with the second finger electrode 443.Wherein second bus electrode 463 is N-type bus electrode.More
For detailed, the first patterned insulation layer 452 is for example arranged in above the bar area 413s of the second diffusion region 413, and the
Two bus electrodes 463 are for example arranged in above a plurality of circle 413c of the second diffusion region 413.
Refer to Fig. 4 B.Fig. 4 B is the profile along c-c ' tangent line of Fig. 4 A.The profile of Fig. 4 B and the profile of Fig. 3 B
Roughly the same.Difference is, can be seen that in figure 4b, is partly configured above the first diffusion region 412 without being configured at second
The second finger electrode 443 on diffusion region 413, can't directly contact the first diffusion region 412, but directly contact is configured at
Patterned passivation layer 420 on one diffusion region 412.
Refer to Fig. 4 C.Fig. 4 C is the profile along d-d ' tangent line of Fig. 4 A.The profile of Fig. 4 C and the profile of Fig. 3 C
Identical, thus like part will not be described here.
In sum, the present invention extends to N-type finger electrode and N-type diffusion region below p-type bus electrode, and by P
Type finger electrode and p type diffusion region extend to below N-type bus electrode, to solve to only have N-type below traditional N-type bus electrode
Only has p type diffusion region below diffusion region and the excessive problem caused by N-type diffusion region, and traditional p-type bus electrode
And the problem caused by excessive p type diffusion region.And, the present invention also can reduce under N-type bus electrode or p-type bus electrode
The displacement of the electric hole of side or electronics and transfer impedance, and then lift the photoelectric transformation efficiency of solaode.Additionally, having
Welding manner between two cell pieces of the solar cell device of the present invention, compatible in traditional series welding technology.
Although the present invention is disclosed above with preferred embodiment, so it is not intended to limit the present invention, this field any
Technical staff, without departing from the spirit and scope of the invention, any modification, equivalent substitution and improvement done etc., all should comprise
Within the scope of the present invention.
Claims (10)
1. a kind of solar cell device is it is characterised in that described solar cell device includes：
Substrate, has the first diffusion region and at least one second diffusion region, wherein said first diffusion region is surrounded on described second
Around diffusion region；
First finger electrode, is configured on described first diffusion region and is electrically connected at described first diffusion region；
Second finger electrode, is configured on described second diffusion region and is electrically connected at described second diffusion region；
First patterned insulation layer, be configured at partly above described second diffusion region with partly described second finger electrode on；
Second patterned insulation layer, be configured at partly above described first diffusion region with partly described first finger electrode on；
First bus electrode, be configured on described first patterned insulation layer, partly in described first finger electrode with part institute
State above the first diffusion region, and be electrically connected with described first finger electrode；And
Second bus electrode, be configured on described second patterned insulation layer, partly above described second diffusion region with part institute
State in the second finger electrode, and be electrically connected with described second finger electrode.
2. solar cell device as claimed in claim 1 is it is characterised in that wherein said second diffusion region has the first length
Area and the second short area, wherein said first long area is connected with the described second short area.
3. solar cell device as claimed in claim 2 is it is characterised in that wherein said first patterned insulation layer system joins
It is placed in above the partly described first long area of described second diffusion region and is configured at partly described positioned at the described first long area
In two finger electrodes, described second patterned insulation layer system is configured above part first diffusion region in neighbouring described second short area
And be configured in partly described first finger electrode in described second short area.
4. solar cell device as claimed in claim 2 is it is characterised in that first length in wherein said first long area is big
In second length in the described second short area, and first width in described first long area is less than or equal to the second of the described second short area
Width.
5. solar cell device as claimed in claim 4 is it is characterised in that wherein said first width is between 200～500
Between micron.
6. solar cell device as claimed in claim 1 is it is characterised in that wherein said first diffusion region is spread for emitter-base bandgap grading
Area, in order to collect produced minority charge carriers after substrate described in sunlight, and described second diffusion region is expanded for base stage
Scattered area, in order to collect produced majority electric charge carrier after substrate described in sunlight.
7. solar cell device as claimed in claim 6 is it is characterised in that adulterate for p-type in wherein said emitter-base bandgap grading diffusion region
Area, described base diffusion area is n-type doping area.
8. a kind of solar cell device is it is characterised in that described solar cell device includes：
Substrate, has the first diffusion region and at least one second diffusion region, wherein said first diffusion region is surrounded on described second
Around diffusion region；
Patterned passivation layer, be configured on described first diffusion region with described second diffusion region on；
First finger electrode, is configured on described first diffusion region and is electrically connected at described first diffusion region；
Second finger electrode, is partly configured on described second diffusion region and part is configured above described first diffusion region, its
In partly described second finger electrode that is configured on described second diffusion region be electrically connected at described second diffusion region, be configured at
Described pattern has been further included between partly described second finger electrode above described first diffusion region and described first diffusion region
Change passivation layer, be used for making described second finger electrode be electrically insulated from described first diffusion region；
First patterned insulation layer, be configured at partly above described second diffusion region with partly described second finger electrode on；
Second patterned insulation layer, be configured at partly above described first diffusion region with partly described first finger electrode on；
First bus electrode, be configured on described first patterned insulation layer, partly in described first finger electrode with part institute
State above the first diffusion region, and be electrically connected with described first finger electrode；And
Second bus electrode, be configured on described second patterned insulation layer, partly above described second diffusion region, partly described
In second finger electrode with described patterned passivation layer above, and described second bus electrode be electrically connected with described second finger-like electricity
Pole.
9. solar cell device as claimed in claim 8 it is characterised in that wherein said second diffusion region have a plurality of
Discontinuity zone and a bar area.
10. solar cell device as claimed in claim 9 is it is characterised in that wherein said first patterned insulation layer is joined
It is placed in above the described bar area of described second diffusion region, described second bus electrode is configured at the described of described second diffusion region
Above discontinuity zone.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101567401A (en) * | 2008-04-21 | 2009-10-28 | 三洋电机株式会社 | Solar cell module |
| CN103035779A (en) * | 2011-10-06 | 2013-04-10 | 三星Sdi株式会社 | Photovoltaic device |
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| CN101567401A (en) * | 2008-04-21 | 2009-10-28 | 三洋电机株式会社 | Solar cell module |
| CN103035779A (en) * | 2011-10-06 | 2013-04-10 | 三星Sdi株式会社 | Photovoltaic device |
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