CN105226110A - A kind of solar cell device - Google Patents
A kind of solar cell device Download PDFInfo
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- CN105226110A CN105226110A CN201410294678.5A CN201410294678A CN105226110A CN 105226110 A CN105226110 A CN 105226110A CN 201410294678 A CN201410294678 A CN 201410294678A CN 105226110 A CN105226110 A CN 105226110A
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Abstract
A kind of solar cell device, comprises substrate, the first finger electrode, the second finger electrode, the first patterned insulation layer, the second patterned insulation layer, the first bus electrode and second bus electrode with the first diffusion region and the second diffusion region.Above-mentioned first bus electrode except be configured on the first finger electrode with the first diffusion region above except, more comprise be configured on the first patterned insulation layer, above the second finger electrode with the second diffusion region above.Second bus electrode except be configured on the second finger electrode with the second diffusion region above except, more comprise be configured on the second patterned insulation layer, above the first finger electrode with the first diffusion region above.
Description
Technical field
The invention relates to a kind of solar cell device, and relate to a kind of electrode structure of rear-face contact type solar cell device especially.
Background technology
For traditional solar battery structure, top electrode is configured at the upper surface of silicon substrate, and bottom electrode is configured at the lower surface of silicon substrate.But the upper surface of silicon substrate is in order to receive the irradiation of sunlight, the top electrode being therefore positioned at upper surface then can the incident ray of shaded portions, thus reduces the photoelectric conversion efficiency of solar cell.Therefore current technology then develops lower surface top electrode being moved to silicon substrate, make upper/lower electrode (or claiming p-type electrode and n-type electrode) together be configured at the lower surface of silicon substrate, the solar cell with this kind of structure is called back contact solar battery (BackContactSolarCell).Back contact solar battery is broadly divided into Four types structure: interdigital formula back electrode solar cell (InterdigitatedBackContact, be called for short IBC), emitter-base bandgap grading penetration back electrode solar cell (EmitterWrapThrough, be called for short EWT), metal piercing formula back electrode solar cell (MetallizationWrapThrough, be called for short MWT) with metal around limit formula back electrode solar cell (MetallizationWrapAround, be called for short MWA), wherein comparatively common with interdigital formula back electrode solar cell.
The top view of tradition shown in Figure 1 interdigital formula back electrode solar cell 100.As shown in Figure 1, conventional solar cell 100 comprise N-type diffusion region 111, p type diffusion region 121, N-type bus electrode 112, P type bus electrode 122, a plurality of N-type finger electrodes 113, with a plurality of P type finger electrodes 123.Above-mentioned N-type diffusion region 111 is pectination arrangement, and 121, p type diffusion region is surrounded on around N-type diffusion region 111.In addition, aforementioned p-type bus electrode 122 and a plurality of P type finger electrodes 123 to be all configured on p type diffusion region 121 and three is electrically connected mutually.Above-mentioned N-type bus electrode 112 and a plurality of N-type finger electrodes 113 are all configured on N-type diffusion region 111 and three is electrically connected mutually.
In addition, for interdigital formula back electrode solar cell 100, when light irradiate silicon substrate upper surface and create electronics electricity hole to after, electrons is assembled toward N-type diffusion region 111, and electric hole then can be assembled toward p type diffusion region 121.But, the electronics electricity hole that the silicon substrate at N-type diffusion region 111 overcentre is produced for, if electric hole will move to the distance of p type diffusion region 121, then to move to the distance of the N-type diffusion region 111 below it relative to electronics relatively far away.In addition, for the electronics electricity hole that the silicon substrate at p type diffusion region 121 overcentre produces, if electronics will move to the distance of N-type diffusion region 111, then it is relatively far away that the distance that will move to the p type diffusion region 121 below it compared to electric hole is come.It should be noted that in N-type silicon substrate, substrate surface light is irradiated the electric hole produced and is belonged to minority carrier, and electronics then belongs to most carrier.If therefore the area of N-type diffusion region 111 is excessive, easily make electric hole will move to the distance of p type diffusion region 121 long, then minority carrier (electric hole) is easy to lose in moving process, make short circuit current (shortcircuitcurrent, be called for short Isc) reduce, and then affect the efficiency of solar cell.If but reduce the area of N-type diffusion region 111, then can affect the conduction resistance of most carrier.In addition, the area of larger p type diffusion region 121 is conducive to collecting more minority carrier to promote Isc, and then promotes the photoelectric conversion efficiency of solar cell.But it is elongated that larger p type diffusion region 121 can make electronics move to the distance of N-type diffusion region 111, when the resistance of electronics movement becomes large, then can reduce fill factor, curve factor (FillFactor is called for short FF), and then reduce photoelectric conversion efficiency.
Therefore manufacturer is had to propose a kind of technical scheme, to solve the problem that N-type diffusion zone excessive below bus electrode or excessive territory, p type diffusion region cause.The structural representation of the solar cell device that Fig. 2 A proposes for SunPower company.Fig. 2 B is the series welding structural representation of two groups of solar cell devices.Please refer to Fig. 2 A.The solar cell device 200 that SunPower company proposes comprises bus electrode 202 and finger electrode 204.Compared to the rectangular large-area bus electrode of tradition, then SunPower company proposes bus electrode 202 is dwindled into several square pattern and is configured at the fringe region of solar cell device 200.In other words, when the area of bus electrode 202 reduces, mean that the area of the diffusion zone be positioned at below bus electrode 202 also can reduce simultaneously, so can solve the problem that N-type diffusion zone excessive below bus electrode 202 or excessive territory, p type diffusion region cause.But, there is no any bus electrode 202 at the zone line of above-mentioned solar cell device 200.Therefore, for electronics or electric hole, the distance of bus electrode 202 to be converged to from finger electrode 204 elongated.Like this then be unfavorable for the transmission in electronics or electric hole.In addition, because the bus electrode 202 reduced of solar cell device 200 is configured in element edge, therefore the finger electrode 204 being positioned at the fringe region of solar cell device 200 needs to rearrange design, so that the square bus electrode 202 making finger electrode 204 be connected directly to reduce.
Moreover, please also refer to Fig. 2 B.Because of the particular design of above-mentioned bus electrode 202, the cell piece making to have solar cell device 200a is connected in series bus electrode 202 each other with utilizing traditional series welding technology between the cell piece with solar cell device 200b, and the welding 206 of the particular design that therefore needs to arrange in pairs or groups could realize the serial connection of two cell pieces.
Therefore, provide a kind of electrode structure of solar cell of improvement, and obtain the design optimization of N-type diffusion region area and p type diffusion region area ratio, to promote the photoelectric conversion efficiency of solar cell, for developing the main spirits of this case.
Summary of the invention
The present invention proposes a kind of solar cell device, to promote the photoelectric conversion efficiency of solar cell.
For reaching above-mentioned advantage or other advantages, one embodiment of the invention propose a kind of solar cell device, comprise substrate, the first finger electrode, the second finger electrode, the first patterned insulation layer, the second patterned insulation layer, the first bus electrode and the second bus electrode.Aforesaid substrate has the first diffusion region and at least one the second diffusion region, and wherein the first diffusion region is surrounded on around the second diffusion region.Above-mentioned first finger electrode to be configured on the first diffusion region and to be electrically connected at the first diffusion region.Above-mentioned second finger electrode to be configured on the second diffusion region and to be electrically connected at the second diffusion region.Above-mentioned first patterned insulation layer is configured at above part second diffusion region with on part second finger electrode.Above-mentioned second patterned insulation layer is configured at above part first diffusion region with on part first finger electrode.Above-mentioned first bus electrode is configured on the first patterned insulation layer, on part first finger electrode with part first diffusion region above, and be electrically connected the first finger electrode.Above-mentioned second bus electrode is configured on the second patterned insulation layer, above part second diffusion region with on part second finger electrode, and be electrically connected the second finger electrode.
The present invention separately proposes a kind of solar cell device, comprises substrate, patterned passivation layer, the first finger electrode, the second finger electrode, the first patterned insulation layer, the second patterned insulation layer, the first bus electrode and the second bus electrode.Aforesaid substrate has the first diffusion region and at least one the second diffusion region, and wherein the first diffusion region is surrounded on around the second diffusion region.Above-mentioned patterned passivation layer is configured on the first diffusion region with on the second diffusion region.Above-mentioned first finger electrode to be configured on the first diffusion region and to be electrically connected at the first diffusion region.Above-mentioned second finger electrode partial configuration on the second diffusion region and partial configuration above the first diffusion region, part second finger electrode be wherein configured on the second diffusion region is electrically connected at the second diffusion region, is configured between part second finger electrode above the first diffusion region and the first diffusion region and more includes patterned passivation layer.Above-mentioned first patterned insulation layer is configured at above part second diffusion region with on part second finger electrode.Above-mentioned second patterned insulation layer is configured at above part first diffusion region with on part first finger electrode.Above-mentioned first bus electrode is configured on the first patterned insulation layer, on part first finger electrode with part first diffusion region above, and be electrically connected described first finger electrode.And above-mentioned second bus electrode is configured on the second patterned insulation layer, above part second diffusion region, on part second finger electrode with patterned passivation layer above, and the second bus electrode is electrically connected at the second finger electrode.
In sum, N-type finger electrode and N-type diffusion region extend to below P type bus electrode by the present invention, and P type finger electrode and p type diffusion region are extended to below N-type bus electrode, to solve the problem only having N-type diffusion region and excessive N-type diffusion region to cause below traditional N-type bus electrode, and the problem only having p type diffusion region and excessive p type diffusion region to cause below traditional P type bus electrode.Further, the present invention also can reduce displacement and the transfer impedance of electric hole below N-type bus electrode or P type bus electrode or electronics, and then promotes the photoelectric conversion efficiency of solar cell.In addition, the welding manner between two cell pieces with solar cell device of the present invention, can be compatible with traditional series welding technology.
Accompanying drawing explanation
Fig. 1 is the top view of traditional interdigital formula back electrode solar cell 100.
Fig. 2 A is the structural representation of the solar cell device that SunPower company proposes.
Fig. 2 B is the series welding structural representation of two groups of solar cell devices.
Fig. 3 A is the structure top view of the solar cell device of one embodiment of the invention.
Fig. 3 B is the profile along a-a ' tangent line of Fig. 3 A.
Fig. 3 C is the profile along b-b ' tangent line of Fig. 3 A.
Fig. 4 A is the top view of the solar battery structure of one embodiment of the invention.
Fig. 4 B is the profile along c-c ' tangent line of Fig. 4 A.
Fig. 4 C is the profile along d-d ' tangent line of Fig. 4 A.
Embodiment
Aforementioned and other technology contents, feature and effect for the present invention, in the detailed description of following cooperation with reference to a graphic preferred embodiment, can clearly present.
Fig. 3 A is the structure top view of the solar cell device of one embodiment of the invention.Fig. 3 B is the profile along a-a ' tangent line of Fig. 3 A.Fig. 3 C is the profile along b-b ' tangent line of Fig. 3 A.Please also refer to Fig. 3 A and Fig. 3 B.Solar cell device 300 of the present invention comprises substrate 310, first finger electrode 342, second finger electrode 343, first patterned insulation layer 352, second patterned insulation layer 353, first bus electrode 362 and the second bus electrode 363 with the first diffusion region 312 and at least one the second diffusion region 313.In figure 3 a, ranked second diffusion region 313, a plurality of second finger electrodes 343 with a plurality of first finger electrodes 342 for explain orally example with plural number, but the present invention is not as limit.In addition, above-mentioned solar cell device 300 is such as rear-face contact type solar cell.Therefore, aforesaid substrate 310 such as also includes sensitive surface S1 and shady face S2.Wherein sensitive surface S1 is in order to receive the irradiation of sunlight, and sensitive surface S1 is rough surface, to promote the absorptivity of sensitive surface S1.In addition, above-mentioned first diffusion region 312 and the second diffusion region 313 are configured in the substrate 310 away from sensitive surface S1.Aforesaid substrate 310 is such as N-type silicon substrate.
Please refer to Fig. 3 A.The first above-mentioned diffusion region 312 is surrounded on plural number and ranked second around diffusion region 313, and each second diffusion region 313 such as includes the first long district 3132 and the second short district 3133, and wherein the first long district 3132 is connected with the second short district 3133.Above-mentioned first diffusion region 312 is emitter-base bandgap grading diffusion region, in order to the minority charge carriers (such as electric hole) produced after collecting solar light irradiation sensitive surface S1.Above-mentioned second diffusion region 313 is base diffusion district, in order to the most electric charge carriers (such as electronics) produced after collecting the sensitive surface S1 of solar light irradiation substrate 310.In addition, above-mentioned emitter-base bandgap grading diffusion region is such as P type doped region or claims p type diffusion region, and base diffusion district is such as N-type doped region or claims N-type diffusion region.In addition, the first length L1 in above-mentioned first long district 3132 is greater than the second length L2 in the second short district 3133, and the first long district 3132 is different from the width in the second short district 3133.
Please continue to refer to Fig. 3 A.Above-mentioned first finger electrode 342 to be configured on the first diffusion region 312 and to be electrically connected at the first diffusion region 312, and wherein the first finger electrode 342 is P type finger electrode.Above-mentioned second finger electrode 343 is configured on the second diffusion region 313, and is electrically connected at the second diffusion region 313, and wherein the second finger electrode 343 is N-type finger electrode.In addition, above-mentioned first patterned insulation layer 352 is configured at on part second finger electrode 343 above part second diffusion region 313, and directly contacts the second finger electrode 343.Further, the second patterned insulation layer 353 is configured at on part first finger electrode 342 above part first diffusion region 312, and directly contacts the first finger electrode 342.More detailed, the first patterned insulation layer 352 is configured at above the long district 3132 of part first of the second diffusion region 313, and be configured at be positioned at the first long district 3132 part second finger electrode 343 on.Further, the second patterned insulation layer 353 be configured at contiguous second short district 3133 part first diffusion region 312 above and contiguous second short district 3133 part first finger electrode 342 on.
It is worth mentioning that, because of the first diffusion region 312 and the second adjacent configuration in diffusion region 313, and the width of the second diffusion region 313 is narrower.And, in processing procedure process above part first diffusion region 312 in the short district of vicinity second 3133 of formation second patterned insulation layer 353 and on part first finger electrode 342 in contiguous second short district 3133, the width being usually configured at the second patterned insulation layer 353 on single first finger electrode 342 can equal or slightly larger than the width of the first diffusion region 312 between two adjacent second diffusion regions 312.So make the second patterned insulation layer 353 cover the second finger electrode 343 because of error deviation in order to avoid the alignment error in processing procedure process, then the first width W 1 that the present invention proposes the first long district 3132 such as can be less than or equal to second width W 2 in the second short district 3133.So can lift elements yield.And in a preferred embodiment, above-mentioned first width W 1 is such as between 200 ~ 500 microns.In other embodiments of the invention, the second width W 2 such as can between 300 ~ 600 microns, but under different process conditions and processing environment, the scope of the second width W 2 can be finely tuned, and therefore the present invention is not limited with above-mentioned.
Please continue to refer to Fig. 3 A.Moreover, above-mentioned first bus electrode 362 be configured on the first patterned insulation layer 352, on part first finger electrode 342 with part first diffusion region 312 above.Further, the second bus electrode 363 is configured on the second patterned insulation layer 353, above part second diffusion region 313 with on part second finger electrode 343.In addition, above-mentioned first bus electrode 362 is electrically connected at a plurality of the first finger electrodes 342, and in order to collect the electric current from a plurality of the first finger electrodes 342, wherein the first bus electrode 362 is P type bus electrode.Above-mentioned second bus electrode 363 is electrically connected at a plurality of the second finger electrodes 343, and in order to collect the electric current from a plurality of the second finger electrodes 343, wherein the second bus electrode 363 is N-type bus electrode.
It should be noted that and be configured with the first diffusion region 312 and the second diffusion region 313 be positioned at below the first patterned insulation layer 352 below the first bus electrode 362 simultaneously.Further, be configured with a plurality of first finger electrodes 342 and a plurality of second finger electrodes 343 be positioned at below the first patterned insulation layer 352 below the first bus electrode 362 more simultaneously.Wherein, above-mentioned first patterned insulation layer 352 electrically isolates from the first bus electrode 362 in order to make the second finger electrode 343.In addition, also be configured with the second diffusion region 313 and the first diffusion region 312 be positioned at below the second patterned insulation layer 353 below second bus electrode 363 simultaneously, and below the second bus electrode 363, be configured with a plurality of second finger electrodes 343 and a plurality of first finger electrodes 342 be positioned at below the second patterned insulation layer 353 more simultaneously.Wherein, above-mentioned second patterned insulation layer 353 electrically isolates from the second bus electrode 363 in order to make the first finger electrode 342.Therefore, except being configured with the second diffusion region 313 below second bus electrode 363 of the present invention, more comprise and be configured with the first diffusion region 312, so then can solve the problem only having N-type diffusion region and excessive N-type diffusion region to cause below traditional N-type bus electrode.In addition, below first bus electrode 362 of the present invention except being configured with the first diffusion region 312, more comprise and be configured with the second diffusion region 313, so then can solve the problem only having p type diffusion region and excessive p type diffusion region to cause below traditional P type bus electrode.
In addition, it should be noted that, the first bus electrode 362 that solar cell device 300 of the present invention has and the second bus electrode 363 are traditional design, traditional series welding technology can be utilized between two cell pieces therefore with solar cell device 300 of the present invention to be connected in series bus electrode each other, and the welding of particular design of needn't arranging in pairs or groups.
Please refer to Fig. 3 B.Fig. 3 B is the profile along a-a ' tangent line of Fig. 3 A.Solar cell device 300 of the present invention except having said elements, such as, also includes patterned passivation layer 320.Above-mentioned patterned passivation layer 320 is configured at the surperficial S3 away from sensitive surface S1 of the first diffusion region 312 and the second diffusion region 313, in order to protect the first diffusion region 312 and the second diffusion region 313.Above-mentioned first finger electrode 342 and the second finger electrode 343 run through patterned passivation layer 320 and directly contact the first diffusion region 312 and the second diffusion region 313 respectively.It should be noted that in figure 3b using the first finger electrode 342 of same widths and the second finger electrode 343 as explaining orally example, but visual process conditions demand adjusts the width ratio between different finger electrode, the present invention is not limited with above-mentioned.
Please continue to refer to Fig. 3 B.In addition, above-mentioned second bus electrode 363 directly contacts and is electrically connected at a plurality of the second finger electrodes 343.Further, can be found out by Fig. 3 B, the second bus electrode 363 (i.e. N-type bus electrode) below is configured with the second diffusion region 313 and the first diffusion region 312 be positioned at below the second patterned insulation layer 353 simultaneously.Like this then the problem only having N-type diffusion region and excessive N-type diffusion region to cause below traditional N-type bus electrode can be solved.Further, be configured with a plurality of second finger electrodes 343 and a plurality of first finger electrodes 342 be positioned at below the second patterned insulation layer 353 below the second bus electrode 363 of the present invention more simultaneously.
It should be noted that and please also refer to Fig. 3 A and Fig. 3 B.If only the first diffusion region 312 is extended to below the second bus electrode 363, but the first diffusion region 312 the first finger electrode 342 also not extended to relatively below the second bus electrode 363, after the minority charge carriers (such as electric hole) produced in the first diffusion region 312 then below the second bus electrode 363 must move a segment distance in the first diffusion region 312, could be connected with the first finger electrode 342, so then be unfavorable for the transmission of minority charge carriers.Therefore the present invention proposes the structure the first finger electrode 342 being extended to the first diffusion region 312 below the second bus electrode 363, so that allow the minority charge carriers (such as electric hole) produced in the first diffusion region 312 below the second bus electrode 363 directly can flow to the first finger electrode 342 below the second bus electrode 363, so relatively can reduce displacement and the transfer impedance in electric hole, to promote photoelectric conversion efficiency.
Please refer to Fig. 3 C.Fig. 3 C is the profile along b-b ' tangent line of Fig. 3 A.Can find out by Fig. 3 C, the first bus electrode 362 is directly contacted with a plurality of the first finger electrodes 342.Further, the first bus electrode 362 (i.e. P type bus electrode) below of the present invention is configured with the first diffusion region 312 (i.e. p type diffusion region) and the second diffusion region 313 (i.e. N-type diffusion region) be positioned at below the first patterned insulation layer 352 simultaneously.Like this then the problem only having p type diffusion region and excessive p type diffusion region to cause below traditional P type bus electrode can be solved.In addition, be configured with a plurality of first finger electrodes 342 and a plurality of second finger electrodes 343 be positioned at below the first patterned insulation layer 352 below the first bus electrode 362 of the present invention more simultaneously.Structural allocation so, can allow the most electric charge carriers (such as electronics) produced in the second diffusion region 313 below the first bus electrode 362 directly can be passed to the second finger electrode 343 below the first bus electrode 362.So relatively can reduce displacement and the transfer impedance of electronics, to promote photoelectric conversion efficiency.
Fig. 4 A is the top view of the solar battery structure of one embodiment of the invention.Fig. 4 B is the profile along c-c ' tangent line of Fig. 4 A.Fig. 4 C is the profile along d-d ' tangent line of Fig. 4 A.Please refer to Fig. 4 A.Solar cell device 300 compared to Fig. 3 A has second diffusion region 313 in the first long district 3132 and the first short district 3133, and maximum difference is that the second diffusion region 413 of solar cell 400 of the present invention has a plurality of discontinuity zone (such as circle, quadrangle etc.) and bar area 413s.In Fig. 4 A, a plurality of discontinuous circle 413c is as the explanation example of a plurality of discontinuity zone, but the present invention is not as limit.
Please also refer to Fig. 4 A and Fig. 4 B.Solar cell 400 of the present invention comprises substrate 410, patterned passivation layer 420, first finger electrode 442, second finger electrode 443, first patterned insulation layer 452, second patterned insulation layer 453, first bus electrode 462 and second bus electrode 463 with the first diffusion region 412 and the second diffusion region 413.In Figure 4 A, ranked second diffusion region 413, a plurality of second finger electrodes 443 with a plurality of first finger electrodes 442 for explain orally example with plural number, but the present invention is not as limit.In addition, above-mentioned solar cell 400 is such as rear-face contact type solar cell.Therefore, aforesaid substrate 410 such as also includes sensitive surface S1 and shady face S2.In addition, above-mentioned first diffusion region 412 and the second diffusion region 413 are configured in the substrate 410 away from sensitive surface S1.Aforesaid substrate 410 is such as N-type silicon substrate.
Please refer to Fig. 4 A.Above-mentioned first diffusion region 412 is surrounded on plural number and ranked second around diffusion region 413, and each second diffusion region 413 such as includes a plurality of discontinuous circle 413c and bar area 413s.And the circle 413c of the second adjacent diffusion region 413 can be parallel to each other side by side or be staggered, in Figure 4 A to be staggered as explanation example, but the present invention is not as limit.It is worth mentioning that, if the interlaced arrangement of circle 413c of adjacent second diffusion region 413, then other bar area of its point 413s then presents the configuration that one is long and the other is short respectively, as shown in Figure 4 A.
Please also refer to Fig. 4 A and Fig. 4 B.Above-mentioned patterned passivation layer 420 is configured on the first diffusion region 412 with on the second diffusion region 413.More in detail, patterned passivation layer 420 be configured at first diffusion region 412 and the second diffusion region 413 away from the surperficial S3 of sensitive surface S1.In addition, above-mentioned first diffusion region 412 is P type doped region, and the second diffusion region 413 is N-type doped region.In addition, above-mentioned first finger electrode 442 is configured on the first diffusion region 412 and electric connection the first diffusion region 412, and wherein the first finger electrode 442 is P type finger electrode.Above-mentioned second finger electrode 443 is configured on the second diffusion region 413 and electric connection the second diffusion region 413, and wherein the second finger electrode 443 is N-type finger electrode.It should be noted that, each second finger electrode 443 partial configuration above-mentioned on the second diffusion region 413 and partial configuration above the first diffusion region 412, part second finger electrode 443 be wherein configured on the second diffusion region 413 is electrically connected at the second diffusion region 413, and between part second finger electrode 443 be configured at above the first diffusion region 412 and the first diffusion region 412, more include patterned passivation layer 420, make the second finger electrode 443 be electrically insulated from the first diffusion region 412.
Please continue simultaneously with reference to figure 4A and Fig. 4 B.Above-mentioned first patterned insulation layer 452 is configured at on part second finger electrode 443 above part second diffusion region 413, and the second patterned insulation layer 453 is configured at above part first diffusion region 412 with on part first finger electrode 442.In addition, the first bus electrode 462 be configured on the first patterned insulation layer 452, on part first finger electrode 442 with part first diffusion region 412 above.And the first bus electrode 462 is electrically connected the first finger electrode 442.Wherein the first bus electrode 462 is P type bus electrode.Above-mentioned second bus electrode 463 be configured on the second patterned insulation layer 453, above part second diffusion region 413, on part second finger electrode 443 with patterned passivation layer 420 above.And the second bus electrode 463 is electrically connected the second finger electrode 443.Wherein the second bus electrode 463 is N-type bus electrode.More in detail, the first patterned insulation layer 452 be such as be configured at the second diffusion region 413 bar area 413s above, and the second bus electrode 463 be such as be configured at the second diffusion region 413 a plurality of circle 413c above.
Please refer to Fig. 4 B.Fig. 4 B is the profile along c-c ' tangent line of Fig. 4 A.The profile of Fig. 4 B is roughly the same with the profile of Fig. 3 B.Difference is, can find out in figure 4b, the second finger electrode 443 that partial configuration is not configured on the second diffusion region 413 above the first diffusion region 412, directly can't contact the first diffusion region 412, but directly contact the patterned passivation layer 420 be configured on the first diffusion region 412.
Please refer to Fig. 4 C.Fig. 4 C is the profile along d-d ' tangent line of Fig. 4 A.The profile of Fig. 4 C is identical with the profile of Fig. 3 C, and therefore something in common does not repeat them here.
In sum, N-type finger electrode and N-type diffusion region extend to below P type bus electrode by the present invention, and P type finger electrode and p type diffusion region are extended to below N-type bus electrode, to solve the problem only having N-type diffusion region and excessive N-type diffusion region to cause below traditional N-type bus electrode, and the problem only having p type diffusion region and excessive p type diffusion region to cause below traditional P type bus electrode.Further, the present invention also can reduce displacement and the transfer impedance of electric hole below N-type bus electrode or P type bus electrode or electronics, and then promotes the photoelectric conversion efficiency of solar cell.In addition, the welding manner between two cell pieces with solar cell device of the present invention, can be compatible with traditional series welding technology.
Although the present invention discloses as above with preferred embodiment; so it is not intended to limit the present invention, the technical staff in this field any, without departing from the spirit and scope of the invention; any amendment of making, equivalent replacement, improvement etc., all should be included in protection scope of the present invention.
Claims (10)
1. a solar cell device, is characterized in that, described solar cell device comprises:
Substrate, has the first diffusion region and at least one the second diffusion region, and wherein said first diffusion region is surrounded on around described second diffusion region;
First finger electrode, to be configured on described first diffusion region and to be electrically connected at described first diffusion region;
Second finger electrode, to be configured on described second diffusion region and to be electrically connected at described second diffusion region;
First patterned insulation layer, is configured at above described second diffusion region of part with on described second finger electrode of part;
Second patterned insulation layer, is configured at above described first diffusion region of part with on described first finger electrode of part;
First bus electrode, be configured on described first patterned insulation layer, on described first finger electrode of part with described first diffusion region of part above, and be electrically connected described first finger electrode; And
Second bus electrode, be configured on described second patterned insulation layer, above described second diffusion region of part with on described second finger electrode of part, and be electrically connected described second finger electrode.
2. solar cell device as claimed in claim 1, it is characterized in that, wherein said second diffusion region has the first long district and the second short district, and wherein said first long district is connected with described second short district.
3. solar cell device as claimed in claim 2, it is characterized in that, be configured at and be positioned on described second finger electrode of part in described first long district above the described first long district of the part that wherein said first patterned insulation layer system is configured at described second diffusion region, to be configured on described first finger electrode of part in contiguous described second short district above part first diffusion region that described second patterned insulation layer system is configured at contiguous described second short district.
4. solar cell device as claimed in claim 2, it is characterized in that, first length in wherein said first long district is greater than second length in described second short district, and first width in described first long district is less than or equal to second width in described second short district.
5. solar cell device as claimed in claim 4, it is characterized in that, wherein said first width is between 200 ~ 500 microns.
6. solar cell device as claimed in claim 1, it is characterized in that, wherein said first diffusion region is emitter-base bandgap grading diffusion region, in order to the minority charge carriers produced after collecting substrate described in solar light irradiation, and described second diffusion region is base diffusion district, in order to the most electric charge carriers produced after collecting substrate described in solar light irradiation.
7. solar cell device as claimed in claim 1, it is characterized in that, wherein said emitter-base bandgap grading diffusion region is P type doped region, and described base diffusion district is N-type doped region.
8. a solar cell device, is characterized in that, described solar cell device comprises:
Substrate, has the first diffusion region and at least one the second diffusion region, and wherein said first diffusion region is surrounded on around described second diffusion region;
Patterned passivation layer, is configured on described first diffusion region with on described second diffusion region;
First finger electrode, to be configured on described first diffusion region and to be electrically connected at described first diffusion region;
Second finger electrode, partial configuration on described second diffusion region and partial configuration above described first diffusion region, described second finger electrode of part be wherein configured on described second diffusion region is electrically connected at described second diffusion region, being configured between described second finger electrode of part above described first diffusion region and described first diffusion region and more including described patterned passivation layer, being electrically insulated from described first diffusion region for making described second finger electrode;
First patterned insulation layer, is configured at above described second diffusion region of part with on described second finger electrode of part;
Second patterned insulation layer, is configured at above described first diffusion region of part with on described first finger electrode of part;
First bus electrode, be configured on described first patterned insulation layer, on described first finger electrode of part with described first diffusion region of part above, and be electrically connected described first finger electrode; And
Second bus electrode, be configured on described second patterned insulation layer, above described second diffusion region of part, on described second finger electrode of part with described patterned passivation layer above, and described second bus electrode is electrically connected described second finger electrode.
9. solar cell device as claimed in claim 8, it is characterized in that, wherein said second diffusion region has a plurality of discontinuity zone and a bar area.
10. solar cell device as claimed in claim 9, it is characterized in that, wherein said first patterned insulation layer is configured at above the described bar area of described second diffusion region, and described second bus electrode is configured at above the more described discontinuity zone of described second diffusion region.
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| CN105552137A (en) * | 2016-02-23 | 2016-05-04 | 深圳市创益科技发展有限公司 | Tiny chip electrode lead-out method of back-contact solar cell |
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| CN101567401A (en) * | 2008-04-21 | 2009-10-28 | 三洋电机株式会社 | Solar cell module |
| US20100129955A1 (en) * | 2007-05-17 | 2010-05-27 | Hsin-Chiao Luan | Protection layer for fabricating a solar cell |
| CN103035779A (en) * | 2011-10-06 | 2013-04-10 | 三星Sdi株式会社 | Photovoltaic device |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100129955A1 (en) * | 2007-05-17 | 2010-05-27 | Hsin-Chiao Luan | Protection layer for fabricating a solar cell |
| CN101567401A (en) * | 2008-04-21 | 2009-10-28 | 三洋电机株式会社 | Solar cell module |
| CN103035779A (en) * | 2011-10-06 | 2013-04-10 | 三星Sdi株式会社 | Photovoltaic device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105552137A (en) * | 2016-02-23 | 2016-05-04 | 深圳市创益科技发展有限公司 | Tiny chip electrode lead-out method of back-contact solar cell |
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| CN105226110B (en) | 2017-02-15 |
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