CN105225981A - A kind of etching device of semiconductor substrate and method - Google Patents
A kind of etching device of semiconductor substrate and method Download PDFInfo
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- CN105225981A CN105225981A CN201410235904.2A CN201410235904A CN105225981A CN 105225981 A CN105225981 A CN 105225981A CN 201410235904 A CN201410235904 A CN 201410235904A CN 105225981 A CN105225981 A CN 105225981A
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Abstract
Semiconductor etching process is a kind of technique being removed substrate surface material by physical-chemical reaction, is usually divided into dry etching and the large class of wet etching two.Because the requirement of etching technics to board equipment is relatively low, technique is also fairly simple, applies widely so obtain in semiconductor processing industry.But the etch rate how controlled in wet etching is technological difficulties recognized within the industry always.Base plate carving and corrosion device provided by the invention has Thickness sensitivity module, regulates etch rate, reach good effect by the thickness measuring substrate.
Description
Technical field
The present invention relates to semiconductor electronic field, more particularly, relate to a kind of semiconductor processing and the method that can control etch rate in semiconductor etching process.
Background technology
Semiconductor etching process is a kind of technique being removed substrate surface material by physical-chemical reaction, is usually divided into dry etching and the large class of wet etching two.The Etch selectivity that dry etching, especially plasma etching have had and very high etch rate, but its accuracy is relatively low, can only be used for live width and be greater than in the technique of 4um.Wet etching is compared to dry etch process, although there is certain inferior position in some aspects, because it is relatively low to the requirement of board equipment, technique is also fairly simple, applies widely so still obtain in semiconductor processing industry.
Chemical liquid is normally ejected into substrate surface by traditional wet-etching technology, and chemical liquid and substrate react, and is finally removed by reactant, completes the etching processing to substrate.Among whole process, the factors such as the concentration of liquid and ambient temperature may can change in real time, technical staff is owing to lacking certain reference, and what often by virtue of experience can only control etching process carries out speed and etch period, and its etching result certainly exists very large uncertainty.Operation like this, slightly error, gently then can not reach the requirement of subsequent technique after base plate carving and corrosion, and needing does over again heavily carves; Severe patient more directly can damage substrate, and the high wafer substrate of price is scrapped at this point.
Summary of the invention
In order to solve the problem, the present invention is based on same inventive concept and provide two kinds can control etch rate base plate carving and corrosion device using substrate thickness as reference, and derive a kind of lithographic method being applicable to related device thus respectively, thus solve prior art Problems existing well, substantially increase qualification rate and the acceptance rate of product in etching process.
In order to achieve the above object, technical scheme provided by the invention is as follows:
A kind of base plate carving and corrosion device, comprise machine table main body, substrate load port, delivery unit, chemical liguid supply system and computer system, described base plate carving and corrosion device is provided with etching cavity further, is at least equipped with a substrate thickness detection module in described etching cavity, can measure and feed back the thickness data of whole substrate or the thickness data in a certain region of substrate.
Further, comprise horizontal bearing platform further in described etching cavity, substrate chuck and nozzle, described substrate chuck is for laying the substrate of needs etching and can rotating.
Described substrate thickness detection module to be arranged on horizontal bearing platform and to be positioned at the top of substrate chuck, further, described substrate thickness detection module can in the plane being parallel to substrate chuck transverse direction or longitudinal translation.
Preferably, described substrate thickness detection module is infrared type measuring transducer or measurement by capacitance transducer.
Alternatively, described substrate chuck is the vacuum cup of a circle, Bernoulli chuck or mechanical chuck.
Further, described computer system at least has data processing unit, display unit, regulation and control unit and alarm unit, described computer system presets specification limit and the etching standard of substrate, described computer system can regulate and control medicinal liquid flow and etch period according to the thickness data of substrate thickness detection module feedback, and then changes etch rate to etch satisfactory substrate.
According to the etching technics that aforesaid substrate etching device derives, its technological process is:
(1) substrate enters etching cavity, and before etching technics starts, substrate thickness detection module is worth before measuring the thickness of substrate;
(2) etching technics starts, substrate thickness detection module continuously or compartment of terrain measure and feed back the thickness data of substrate, computer system is estimated etch period according to the thickness data of feedback and is regulated etch rate;
(3) etching technics terminates, and substrate thickness detection module is worth after measuring the substrate that technique completes.
Further, before the thickness described in step (1), value does not meet the alarm unit that the specification limit preset will trigger computer system to described etching technics, and etching technics stops.
Described etching technics further, be worth after the thickness described in step (3) and do not meet the alarm unit that the etching standard preset will trigger computer system, return or scrapped by substrate.
A kind of base plate carving and corrosion device, comprise machine table main body, substrate load port, delivery unit, chemical liguid supply system and computer system, described base plate carving and corrosion device is provided with at least one etching cavity and at least one substrate thickness detection module further, and described substrate thickness detection module is positioned at outside etching cavity, can measure and feed back the thickness data of whole substrate or the thickness data in a certain region of substrate.
Further, comprise horizontal bearing platform further in described etching cavity, substrate chuck and nozzle, described substrate chuck is for laying the substrate of needs etching and can rotating.
Further, described substrate thickness detection module is worth before substrate enters the thickness of etching cavity pre-test substrate, is worth after measuring the thickness of substrate after substrate takes out from etching cavity.
Preferably, described substrate thickness detection module is infrared type measuring transducer or measurement by capacitance transducer.
Alternatively, described substrate chuck is the vacuum cup of a circle, Bernoulli chuck or mechanical chuck.
Further, described computer system at least has data processing unit, display unit, regulation and control unit and alarm unit, described computer system can preset specification limit and the etching standard of substrate, described computer system can regulate and control medicinal liquid flow and etch period according to the thickness data of substrate thickness detection module feedback, and then changes etch rate to etch satisfactory substrate.
According to the etching technics that aforesaid substrate etching device derives, its technological process is:
(1) before etching technics starts, thickness data is also fed back to computer system by value before substrate thickness detection module measures the thickness of substrate, and computer system is estimated etch period and generated the program controlling etch rate variations;
(2) substrate enters etching cavity, and etching cavity carries out PROCESS FOR TREATMENT according to the control program generated to substrate, and the etch period that time and the computer system of PROCESS FOR TREATMENT are estimated is consistent;
(3) etching technics terminates, and substrate thickness detection module is worth after measuring the thickness of the substrate that technique completes.
Further, before the thickness described in step (1), value does not meet the alarm unit that the specification limit preset will trigger computer system to described etching technics, and etching technics stops.
Described etching technics further, be worth after the thickness described in step (3) and do not meet the alarm unit that the etching standard preset will trigger computer system, return or scrapped by substrate.
Base plate carving and corrosion apparatus and method provided by the invention, can according to the etching needs of substrate, take substrate thickness as reference, etch rate in etching technics is controlled, avoid and by virtue of experience carry out etching brought significant errors and uncertainty in the past, substantially increase the yield of product, the substrate after etching is more even, standard also.
Accompanying drawing explanation
Fig. 1 is the structure diagram of each mechanism of device first embodiment of the present invention;
Fig. 2 is the structural representation of the etching cavity of device first embodiment of the present invention;
Fig. 3 is the structural representation of device second embodiment of the present invention.
Embodiment
In order to help those skilled in the art to understand technical scheme described in patent of the present invention better, making below in conjunction with specific embodiment and execution mode and explaining further:
First embodiment discloses a kind of base plate carving and corrosion device, as shown in the structure diagram of accompanying drawing 1, comprises machine table main body 101, substrate load port 102, delivery unit, chemical liguid supply system and computer system.Described substrate load port 102 treats technique or the wafer substrate that completes of technique for depositing, and the capacity of this substrate load port 102 is 25.Described delivery unit be more particularly 103, one, two manipulators for picking and placeing the wafer substrate of non-technique, another wafer substrate completed for picking and placeing technique, due to end view, can only see one in figure.Described manipulator 103 has mapping function, can detect quantity and the position of wafer substrate.Described chemical liguid supply system provides liquid for whole board, and described computer system is responsible for receiving and is calculated Various types of data and regulate and control each electronic unit of board.The electronic unit that described computer system has comprises data processing unit, display unit, regulation and control unit and alarm unit etc.Described liquid supply and computer system 105 are incorporated into separately in a chamber of base plate carving and corrosion device.Described base plate carving and corrosion device further comprises an etching cavity 104.
The etching cavity 104 of accompanying drawing 2 to this embodiment has carried out showing more comprehensively.The principal organ that described etching cavity 104 comprises comprises: horizontal bearing platform 201, substrate chuck 202 and some nozzles 203, has also carried a substrate thickness detection module in especially described etching cavity 104.Described substrate thickness detection module is an infrared type measuring transducer 204, more particularly, and the transducer 204 of the CHRocodile model that this embodiment uses Prey Ci Te company to produce.This transducer 204 can be measured and feed back the thickness data in the thickness data of whole substrate 205 or a certain region, computer system is according to the data fed back, not only can calculate the average thickness in a certain region of wafer 205, can also to scheme or the form of chart shows the shape characteristic of wafer substrate 205 on the display unit of system.Additionally, computer system also regulates the flow of liquid in real time by according to the data fed back and adjusts etch period, and then changes etch rate to etch satisfactory wafer substrate 205.Such as, when the one-tenth-value thickness 1/10 that measuring transducer 204 detects substrate 205 is still very large, the data fed back according to measuring transducer 204 are regulated and controled the chemical liguid supply system of board by computer system, increase medicinal liquid flow or extend etch period, thus changing etch rate; If when the one-tenth-value thickness 1/10 of substrate 205 being detected comparatively close to etching standard, the supply of liquid will be reduced or shorten the time of etching, thus having influence on etch rate.Due in whole etching process, the speed of etching is all according to the thickness real-time monitoring of the substrate 205 monitored, thus can ensure technique complete after wafer substrate 205 can reach our etching standard.Described substrate chuck 202 is more particularly a circular Bernoulli chuck, and this Bernoulli chuck is arranged on horizontal bearing platform 201, and wafer substrate 205 can be driven to rotate.Described infrared type measuring transducer 204 is positioned at the top of Bernoulli chuck and is arranged on horizontal bearing platform 201, and meanwhile, this measuring transducer 204 can also horizontal or longitudinally translation in the plane being parallel to Bernoulli chuck at its place.At the front and back of Bernoulli chuck, some nozzles 203 have been installed, they respectively with the liquid sprayed needed for etching, clean inert gas needed for deionized water used and drying.Because described measuring transducer 204 can resist the corrosion of chemical solution, so do not worry that the measuring transducer 204 be positioned within etching cavity 104 is corroded by liquid.Additionally, this base plate carving and corrosion device is applicable to the wafer substrate of number of different types, such as naked silicon substrate, patterned substrate, multilager base plate and single layer substrate.
This embodiment corresponding to the first embodiment is:
(1) mapping function opened by manipulator 103, detect and behind the position of technique wafer substrate 205, capture substrate 205 from substrate load port 102 and move into etching cavity 104, before etching technics starts, the front value of thickness of substrate 205 measured by measuring transducer 204;
(2) etching technics starts, liquid nozzle sprays liquid, Bernoulli chuck drives wafer substrate 205 to rotate, measuring transducer 204 test constantly also feeds back the thickness data of substrate 205, computer system regulates the parameters of etching cavity 104 in real time according to the data of feedback, thus accelerates or the etch rate that slows down, until after substrate 205 thickness reaches etching standard, control Bernoulli chuck High Rotation Speed, gas nozzle ejection nitrogen drying substrate 205;
(3) etching technics completes, value after the thickness of the substrate 205 that technique completes measured by measuring transducer 204 also judges, after confirming to meet etching standard, computer system control manipulator 103 captures wafer substrate 205 that technique completes and is positioned over the relevant position of substrate load port 102.
Computer system, before etching technics starts, to judge before the thickness that feeds back value whether within the specification limit required by etching, if exceed default specification limit, alarm unit will automatic alarm, and etching technics can not start.After etching technics terminates, computer system is worth the requirement whether reaching etching standard after judging the thickness fed back equally, if do not met the demands, alarm unit will alarm.For the substrate 205 that etching depth is inadequate, board will be sent back to and continue etching; And for the substrate 205 of overetch, will directly scrap and send board.
Accompanying drawing 3 pairs of second embodiment of the present invention disclose.Can see, the base plate carving and corrosion device in the second embodiment includes machine table main body 301, substrate load port 302, delivery unit, chemical liguid supply system and computer system.Described substrate load port 302 treats technique or the wafer substrate 305 that completes of technique for depositing, and the capacity of this substrate load port 302 is 25.Described delivery unit be more particularly two 303, one, manipulators with mapping function for picking and placeing the wafer substrate 305 of non-technique, another wafer substrate 305 completed for picking and placeing technique.Due to end view, in figure, we can only see one of them of manipulator 303.Described feed flow and computer system 306 have been incorporated into a chamber, are responsible for feed flow and the control of whole board.
More crucially, this base plate carving and corrosion device is also provided with a substrate thickness detection module and two etching cavities 304.Described substrate thickness detection module is more particularly a measurement by capacitance transducer 307, can measure and feed back the thickness data of whole substrate 305 or the thickness data in a certain region of substrate 305.It is preposition and feed back that this measuring transducer 307 can enter the thickness of an etching cavity 304 pre-test substrate 305 at substrate 305 respectively; Until this substrate 305 etched and by etching cavity 304 take out time, value after measuring transducer 307 can measure again the thickness of this substrate 305 is also fed back.The measurement result of measuring transducer 307 to scheme or the form of chart shows on the display unit, and can be estimated etch period as computer system and generates the foundation of etch rate control program.According to value after value before the thickness fed back and thickness, described computer system also can judge whether substrate 305 meets specification limit and etching standard.The structure of described two etching cavities 304 is substantially identical, upper and lower stacking distribution in machine table main body 301.Horizontal bearing platform 201 is included, substrate chuck 202 and some nozzles 203 in etching cavity 304.Described substrate chuck 202 is more particularly a vacuum cup, and described vacuum cup is arranged on horizontal bearing platform 201, for placing fixing wafer substrate 305 in etching process.This vacuum cup is rounded, and substrate 305 can be driven to rotate.At the front and back of vacuum cup, some nozzles 203 have been installed, they respectively with the liquid sprayed needed for etching, clean inert gas needed for deionized water used and drying.This base plate carving and corrosion device is applicable to the wafer substrate of number of different types simultaneously.
Corresponding to the embodiment of this second embodiment, comprise following steps:
(1) manipulator 303 is from substrate load port 302 grasping silicon wafer substrate 305, move to the measuring position of measuring transducer 307 correspondence, value before the thickness of substrate 305 measured by measuring transducer 307 also feeds back to computer system, and computer system is estimated etch period and generated the program controlling etch rate variations;
(2) substrate 305 is put into etching cavity 304 by manipulator 303, etching technics starts, liquid nozzle sprays liquid, vacuum cup drives wafer substrate 305 to rotate, computer system regulates the parameters in etching cavity 304 according to the control program generated, and then controlling etch rate follow procedure requirement change, the etch period that time and the computer system of etching technics process are estimated is consistent;
(3) etching technics terminates, vacuum cup High Rotation Speed, gas nozzle ejection nitrogen drying substrate 305, the substrate 305 that technique completes again is captured afterwards by manipulator 303, value after moving to thickness measuring transducer 307 being measured substrate 305 is also fed back, and the relevant position to substrate load port 302 sent by substrate 305 by last manipulator 303.
Computer system, before etching technics starts, to judge before the thickness that feeds back value whether within the specification limit required by etching, if exceed default specification limit, alarm unit will automatic alarm, and etching technics can not start.After etching technics terminates, computer system is worth the requirement whether reaching etching standard after judging the thickness fed back equally, if do not met the demands, alarm unit will alarm.For the substrate 305 that etching depth is inadequate, board will be sent back to and continue etching; And for the substrate 305 of overetch, will directly scrap and send board.
In description above, give more concrete details to provide more thorough understanding of the invention.But, it will be apparent to one skilled in the art that the present invention can be implemented without the need to these details one or more.Therefore, inventor's request is the maximum rights protection scope containing above-mentioned full content.
Claims (20)
1. a base plate carving and corrosion device, comprise machine table main body, substrate load port, delivery unit, chemical liguid supply system and computer system, it is characterized in that: described base plate carving and corrosion device is provided with etching cavity further, in described etching cavity, be at least equipped with a substrate thickness detection module, can measure and feed back the thickness data of whole substrate or the thickness data in a certain region of substrate.
2. base plate carving and corrosion device according to claim 1, is characterized in that, comprises horizontal bearing platform further in described etching cavity, substrate chuck and nozzle, and described substrate chuck is for laying the substrate of needs etching and can rotating.
3. base plate carving and corrosion device according to claim 1, is characterized in that, described substrate thickness detection module to be arranged on horizontal bearing platform and to be positioned at the top of substrate chuck.
4. base plate carving and corrosion device according to claim 3, is characterized in that, described substrate thickness detection module transverse direction or longitudinal translation in the plane being parallel to substrate chuck.
5. base plate carving and corrosion device according to claim 1, is characterized in that, described substrate thickness detection module is infrared type measuring transducer or measurement by capacitance transducer.
6. base plate carving and corrosion device according to claim 2, is characterized in that, described substrate chuck is the vacuum cup of a circle, Bernoulli chuck or mechanical chuck.
7. base plate carving and corrosion device according to claim 1, it is characterized in that, described computer system at least has data processing unit, display unit, regulation and control unit and alarm unit, described computer system presets specification limit and the etching standard of substrate, described computer system can regulate and control medicinal liquid flow and etch period according to the thickness data of substrate thickness detection module feedback, and then changes etch rate to etch satisfactory substrate.
8. utilize the technique that the device described in claim 1 etches substrate, its technological process is:
(1) substrate enters etching cavity, and before etching technics starts, substrate thickness detection module is worth before measuring the thickness of substrate;
(2) etching technics starts, substrate thickness detection module continuously or compartment of terrain measure and feed back the thickness data of substrate, computer system is estimated etch period according to the thickness data of feedback and is regulated etch rate;
(3) etching technics terminates, and substrate thickness detection module is worth after measuring the substrate that technique completes.
9. etching technics according to claim 8, further, before the thickness described in step (1), value does not meet the alarm unit that the specification limit preset will trigger computer system, and etching technics stops.
10. etching technics according to claim 8, further, be worth after the thickness described in step (3) and do not meet the alarm unit that the etching standard preset will trigger computer system, substrate is return or is scrapped.
11. 1 kinds of base plate carving and corrosion devices, comprise machine table main body, substrate load port, delivery unit, chemical liguid supply system and computer system, it is characterized in that: described base plate carving and corrosion device is provided with at least one etching cavity and at least one substrate thickness detection module further, and described substrate thickness detection module is positioned at outside etching cavity, can measure and feed back the thickness data of whole substrate or the thickness data in a certain region of substrate.
12. base plate carving and corrosion devices according to claim 11, is characterized in that, comprise horizontal bearing platform further in described etching cavity, substrate chuck and nozzle, and described substrate chuck is for laying the substrate of needs etching and can rotating.
13. base plate carving and corrosion devices according to claim 11, is characterized in that, described substrate thickness detection module is worth before substrate enters the thickness of etching cavity pre-test substrate, are worth after measuring the thickness of substrate after substrate takes out from etching cavity.
14. base plate carving and corrosion devices according to claim 11, is characterized in that, described substrate thickness detection module is infrared type measuring transducer or measurement by capacitance transducer.
15. base plate carving and corrosion devices according to claim 12, is characterized in that, described substrate chuck is the vacuum cup of a circle, Bernoulli chuck or mechanical chuck.
16. base plate carving and corrosion devices according to claim 11, it is characterized in that, described computer system at least has data processing unit, display unit, regulation and control unit and alarm unit, described computer system can preset specification limit and the etching standard of substrate, described computer system can regulate and control medicinal liquid flow and etch period according to the thickness data of substrate thickness detection module feedback, and then changes etch rate to etch satisfactory substrate.
17. base plate carving and corrosion devices according to claim 11, is characterized in that, the quantity of described etching cavity is two, upper and lower stacking distribution in described machine table main body.
18. 1 kinds of techniques utilizing the device described in claim 11 to etch substrate, its technological process is:
(1) before etching technics starts, thickness data is also fed back to computer system by value before substrate thickness detection module measures the thickness of substrate, and computer system is estimated etch period and generated the program controlling etch rate variations;
(2) substrate enters etching cavity, and etching cavity carries out PROCESS FOR TREATMENT according to the control program generated to substrate, and the etch period that time and the computer system of PROCESS FOR TREATMENT are estimated is consistent;
(3) etching technics terminates, and substrate thickness detection module is worth after measuring the thickness of the substrate that technique completes.
19. etching technics according to claim 18, further, before the thickness described in step (1), value does not meet the alarm unit that the specification limit preset will trigger computer system, and etching technics stops.
20. etching technics according to claim 18, further, be worth after the thickness described in step (3) and do not meet the alarm unit that the etching standard preset will trigger computer system, substrate is return or is scrapped.
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| CN201410235904.2A CN105225981A (en) | 2014-05-30 | 2014-05-30 | A kind of etching device of semiconductor substrate and method |
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| CN201410235904.2A CN105225981A (en) | 2014-05-30 | 2014-05-30 | A kind of etching device of semiconductor substrate and method |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110034102A (en) * | 2019-04-19 | 2019-07-19 | 上海华虹宏力半导体制造有限公司 | A kind of production method and semiconductor devices of semiconductor devices |
| CN111926306A (en) * | 2020-09-22 | 2020-11-13 | 上海陛通半导体能源科技股份有限公司 | Deposition equipment based on multi-process-cavity transmission and wafer deposition method |
| CN118053795A (en) * | 2024-04-16 | 2024-05-17 | 香港科技大学(广州) | Scientific research type wet etching full-automatic system and machine |
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| CN102945802A (en) * | 2012-11-28 | 2013-02-27 | 上海华力微电子有限公司 | Wet etching device and etching method |
| CN103173766A (en) * | 2011-12-26 | 2013-06-26 | 中芯国际集成电路制造(上海)有限公司 | Advanced process control method of wet etching process |
| CN103594330A (en) * | 2012-08-16 | 2014-02-19 | 英飞凌科技股份有限公司 | Etching apparatus and method |
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| JPH11354489A (en) * | 1998-06-05 | 1999-12-24 | Toshiba Corp | Production system of semiconductor and etching method for semiconductor device |
| CN103173766A (en) * | 2011-12-26 | 2013-06-26 | 中芯国际集成电路制造(上海)有限公司 | Advanced process control method of wet etching process |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110034102A (en) * | 2019-04-19 | 2019-07-19 | 上海华虹宏力半导体制造有限公司 | A kind of production method and semiconductor devices of semiconductor devices |
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| CN118053795A (en) * | 2024-04-16 | 2024-05-17 | 香港科技大学(广州) | Scientific research type wet etching full-automatic system and machine |
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Application publication date: 20160106 |