TWM631544U - Single-wafer processing apparatus - Google Patents

Abstract

The present application provides a single-wafer processing apparatus. The single-wafer processing apparatus includes a rotary table, a liquid supply device, and a thickness detection device. The rotary table is configured to place a wafer. The liquid supply device is configured to apply a process liquid to the wafer. The thickness detection device is configured to detect a current thickness of the wafer when it is determined that there is no process liquid on the wafer. By detecting a thickness of the wafer on the integrated single-wafer processing apparatus, process parameters can be adjusted immediately according to a detection result, thereby improving an etching uniformity of the wafer and improving a process accuracy.

Description

Single Wafer Handling Equipment

The present application relates to a wet processing apparatus, particularly a single wafer processing apparatus.

In the semiconductor manufacturing process, the wafer will undergo multiple processing procedures, including etching, cleaning, and so on. As process complexity increases, a single-wafer spin wet processing tool has been developed. The single-wafer spin wet processing machine can apply a variety of different chemical liquids to the wafer on the spin table to clean and etch the metal layer or material film layer on the wafer.

In the conventional etching and cleaning process, the wafer processed by the wet processing machine needs to be transported to the inspection equipment to inspect the thickness of the etched wafer. When the thickness of the wafer does not meet the target specification, the wafer is transported back to the wet processing station again for a second wet processing procedure. However, the round-trip transportation of the wafer between the inspection instrument and the wet processing machine will cause the positioning point of the wafer on the corresponding machine to be offset due to alignment errors, resulting in inaccurate inspection points and/or performing reprocessing. The etching point is not accurate, and eventually the re-etched wafer still does not meet the target specification, and the transfer time of the wafer to and from the inspection instrument and the wet processing machine is consumed.

In view of this, it is necessary to propose a single-wafer processing equipment to solve the problems existing in the prior art.

In order to solve the above-mentioned problems of the prior art, an object of the present application is to provide a single-wafer processing apparatus, which can obtain a wafer with a target thickness.

In order to achieve the above object, the present application provides a single-wafer processing equipment, including: a rotary table, a liquid supply device and a thickness detection device. The turntable is configured to place the wafers. A liquid supply is disposed above the turntable and configured to apply process liquid to the wafer. The thickness detection device is disposed above the rotary table, wherein the thickness detection device is configured to detect the current thickness of the wafer when it is determined that the process liquid does not remain on the wafer.

In some embodiments, the single-wafer processing apparatus further includes a host in communication with the liquid supply device and the thickness detection device, the host is configured to compare the current thickness of the wafer with a target thickness, and the host The liquid supply device is controlled to apply the process liquid to the wafer again according to the comparison result.

In some embodiments, the host includes a database, the database stores a first parameter, the first parameter is related to the length of time that the liquid supply device applies the process liquid to the wafer, and the host is further configured according to the A second parameter is obtained by comparing the results, and the host controls the liquid supply device to apply the process liquid to another wafer using the second parameter.

In some embodiments, the liquid supply includes: a rotating column, a cantilever and a nozzle. One end of the cantilever is connected to the rotating column, and the other end of the cantilever extends above the rotating table. The nozzle is fixed on the other end of the cantilever, and when the rotating column rotates, the cantilever drives the nozzle to reciprocate above the wafer and spray the process liquid.

In some embodiments, the reciprocating path of the nozzle includes moving from a point on the edge of the wafer toward a center point of the wafer, and then from the center point of the wafer toward the edge of the wafer move to another point.

In some embodiments, in response to the result of the current thickness of the wafer detected by the thickness detection device that the thickness of the edge of the wafer is greater than the thickness of the center point of the wafer, the liquid supply Applying the process liquid to the wafer again in response to the device, and the liquid application time of the nozzle to the edge of the wafer is greater than the liquid application time of the nozzle to the center point of the wafer; and in response to the thickness detection device detecting The result of the current thickness of the wafer is that the thickness of the edge of the wafer is less than the thickness of the center point of the wafer, the liquid supply device again applies the process liquid to the wafer, and the nozzle is applied to the wafer. The liquid application time for the edge of the circle is less than the liquid application time for the center point of the wafer by the nozzle.

Compared with the prior art, by detecting the thickness of the wafer on a single machine, the present application can adjust the process parameters in real time to compensate the etching removal amount, thereby effectively improving the etching uniformity of the wafer and improving the process accuracy.

1: Single Wafer Processing System

10: Single Wafer Processing Equipment

110: Rotary table

120: Liquid supply device

121: Rotating column

122: Cantilever

123: Nozzle

130: Thickness detection device

131: Pillar

132: beam arm

133: Sensor

140: Liquid recovery device

150: host

151:Database

152: Storage

153: Processor

20: Wafer

A, B: point

O: center point

R1: Path

S41~S44: Steps

1 shows a schematic diagram of a single-wafer processing apparatus according to an embodiment of the present application; FIG. 2 shows a perspective view of a single-wafer processing apparatus according to an embodiment of the present application; The position and time relationship diagram of the process liquid; FIG. 4 shows the position and time relationship diagram of the liquid supply device applying the process liquid to the wafer according to another embodiment of the present application; FIG. 5 shows the single wafer processing method of the embodiment of the present application. and FIG. 6 shows a block diagram of a single-wafer processing system according to an embodiment of the present application.

In order to make the above-mentioned and other objects, features and advantages of the present disclosure more obvious and easy to understand, the preferred embodiments of the present disclosure will be exemplified below and described in detail in conjunction with the accompanying drawings.

Please refer to FIG. 1 , which shows a schematic diagram of a single-wafer processing apparatus according to an embodiment of the present application. The single-wafer processing apparatus 10 includes a rotary table 110 , a liquid supply device 120 , a thickness detection device 130 , a liquid recovery device 140 and a host 150 . The turntable 110 is configured to place the wafer 20 . Optionally, the top of the rotary table 110 is configured with a vacuum suction cup, and the wafer 20 can be fixed on the rotary table 110 by the suction force exerted by the vacuum suction cup. The rotary table 110 is further provided with a driving mechanism for driving the rotary table 110 to rotate around the axis. Optionally, in some embodiments, the wafer 20 may be fixed on the rotary table 110 in other manners, such as using a clamping device, etc., but not limited thereto.

As shown in FIG. 1 , the liquid supply device 120 is disposed above the rotary table 110 for applying process liquid to the wafer 20 . In this embodiment, the liquid supply device 120 includes a rotating column 121 , a cantilever 122 and a nozzle 123 . The rotating column 121 is laterally adjacent to the rotating table 110 . The cantilever 122 includes two opposite ends, one end of which is connected to the rotating column 121 , and the other end extends above the rotating table 110 . The nozzle 123 is fixed on the other end of the cantilever 122 , and when the rotating column 121 rotates, the cantilever 122 drives the nozzle 123 to reciprocate above the wafer 20 and spray the process liquid.

Optionally, the liquid supply device 120 includes a plurality of nozzles 123 so that the liquid supply device 120 can apply a plurality of process liquids and/or gases (eg, clean dry air) to the wafer 20 . Specifically, the liquid supply device 120 also includes a plurality of transmission lines. The plurality of nozzles 123 are arranged to be aligned with the top of the rotary table 110, and one end of the plurality of transmission lines is connected with the plurality of nozzles 123, and the other ends are respectively connected to supply ends of different process liquids or gases. Therefore, the liquid supply device 120 can be controlled to apply the corresponding process liquid or gas to the wafer 20 on the turntable 110 according to process requirements, so as to perform operations such as etching or cleaning on the wafer 20 .

As shown in FIG. 1 , the thickness detection device 130 is installed above the turntable 110 and configured to detect the thickness of the wafer 20 . It should be noted that, in the present application, the thickness detection device 130 will perform the detection action only when it is determined that there is no process liquid remaining on the wafer 20 . For example, the thickness detection device 130 may detect the initial thickness of the wafer 20 before the liquid supply device 120 applies the process liquid to the wafer 20, or The thickness detection device 130 may detect the current thickness of the wafer 20 after the process liquid on the wafer 20 is removed. It should be understood that the process liquid on the wafer 20 can be brought away from the surface of the wafer 20 by the centrifugal force generated by the high-speed rotation of the rotary table 110 . In some embodiments, the process liquid on the wafer 20 may be removed by applying a clean gas to the wafer 20 through the liquid supply device 120 . In some embodiments, the process liquid on the wafer 20 may be removed by providing a turntable 110 with a heater and evaporating the process liquid on the wafer 20 by a heating method.

As shown in FIG. 1 , the thickness detection device 130 includes a pillar 131 , a beam arm 132 and a sensor 133 . The pillars 131 are laterally adjacent to the rotary table 110 . The beam arm 132 includes two opposite ends, one of which is connected to the post 131 , and the other end extends above the rotary table 110 . The sensor 133 is fixed on the other end of the beam arm 132 . The sensor 133 is aligned with the wafer 20 on the turntable 110 to obtain the thickness of the corresponding point of the wafer 20 . In some embodiments, the support column 131 can be rotated about an axis and/or the beam arm 132 can be extended and retracted, so as to move the sensor 133 to a specific coordinate point to obtain the thickness of the wafer 20 at different positions.

Alternatively, the sensor 133 may employ a non-contact sensor, an optical sensor, or the like. Optical sensors include laser sensors, infrared distance sensors, white light conjugate sensors, and the like. In some embodiments, the sensor 133 adopts a white light conjugate sensor, which is beneficial to improve the detection accuracy to 0.2 μm.

As shown in FIG. 1 , the liquid recovery device 140 is circumferentially disposed around the rotary table 110 for collecting the liquid thrown from the rotary table 110 .

As shown in FIG. 1 , the liquid supply device 120 and the host 150 are connected in communication with the thickness detection device 130 . Preferably, the communication connection includes wired connection and wireless connection, and the wireless connection includes Wi-Fi connection, Bluetooth communication connection, core network communication connection, and the like. Host 150 contains database 151 . The database 151 stores a preset first parameter, and the first parameter is related to the length of time during which the liquid supply device 120 applies the process liquid to the wafer 20 . Theoretically, when the host 150 performs the operation of applying the process liquid to the wafer 20 with the preset first parameters, the thickness of the wafer 20 can be reduced to the target thickness. However, in practice, the thickness of the etched wafer 20 may deviate from the target thickness. Therefore, in the present application, the process is applied to the wafer 20 Before the liquid operation, the host 150 controls the initial thickness of the wafer 20 obtained by the thickness detection device 130 . Next, after the operation of applying the process liquid to the wafer 20 , the host 150 controls the current thickness of the wafer 20 obtained by the thickness detection device 130 . The host 150 can calculate the error thickness of the wafer 20 by comparing the current thickness of the wafer 20 with the target thickness. The host 150 may further control the liquid supply device 120 to apply the process liquid to the wafer 20 again according to the comparison result (ie, the calculated error thickness). For example, by obtaining the current thickness of the wafer 20, it can be determined whether there are specific areas of the wafer 20 with under-etched or cleaning residues. In addition, during wafer etching, the host 150 can control the liquid supply device 120 to prolong the residence time of the nozzle 123 in a specific area of the wafer (ie, increase the spraying time of the process liquid in this area) to compensate for the etching in this area removal (or residue removal), which in turn improves wafer etch uniformity.

On the other hand, the host 150 may further adjust the preset first parameter according to the obtained comparison result to obtain the second parameter. Therefore, in the subsequent process, the liquid supply device 120 can apply the process liquid to another wafer using the second parameter, so that a wafer with a target thickness can be obtained only through one etching step. That is to say, the present application establishes a database of standardized process parameters and wafer materials. When the same wafer (such as the same surface structure, the same material, etc.) is subsequently etched, the process parameters and wafer thickness data can be etched. The library obtains suitable process parameters to accumulate and strengthen the process parameter integration function of the equipment.

In the present application, by detecting the thickness of the wafer 20 before and after etching on a single machine, the process parameters can be corrected and adjusted in real-time and unlimited times to compensate for the amount of etching removal, thereby effectively improving the etching uniformity of the wafer and improve process accuracy. On the other hand, the present application also avoids the process risks caused by transferring the wafer to another thickness inspection instrument, such as positioning errors caused by repeated positioning operations and time-consuming transfer. Optionally, a calibration curve can be established between the wafer thickness value detected by the sensor 133 of the thickness detection device 130 and the wafer thickness value detected by a standard detection instrument, so as to improve the in-situ detection of wafer thickness. Accuracy of circle thickness.

Please refer to FIG. 2 , which shows a perspective view of the single-wafer processing apparatus 10 according to an embodiment of the present application. When the rotating column 121 of the liquid supply device 120 rotates, the cantilever 122 can drive the nozzle 123 to reciprocate above the wafer 20 and spray the process liquid. Specifically, the nozzle 123 of the liquid supply device 120 reciprocates along the path R1. Path R1 involves moving from a point A on the edge of wafer 20 toward a center point O of wafer 20 , and then moving from center point O of wafer 20 toward another point B on the edge of wafer 20 .

Please refer to FIG. 3 , which shows the relationship between the position and the time of applying the process liquid to the wafer by the liquid supply device according to the embodiment of the present application. The horizontal axis of FIG. 3 represents the position of the wafer, where the numbers 0 and 100 correspond to points A and B on the edge of the wafer 20 , respectively, and the number 50 corresponds to the center point O of the wafer 20 . In addition, the vertical axis of FIG. 3 represents the time when the process liquid is sprayed. In this embodiment, according to the result of the thickness detection device detecting the current thickness of the wafer 20 at 130, it can be known that the thickness of the edge of the wafer 20 is greater than the thickness of the center point of the wafer 20 (that is, the etching of the edge region of the wafer The amount is less than the etching amount of the central area of the wafer), so the host 150 can further control the liquid supply device 120 to apply the process liquid to the wafer 20 again, and the nozzle 123 of the liquid supply device 120 applies the liquid to the edge of the wafer 20 The time is greater than the liquid application time of the nozzle 123 to the center point of the wafer 20 . By controlling the dwell time of the nozzle 123 oscillating at different radial points of the wafer 20 , the etching amount of the etching solution on the different radial points of the wafer can be adjusted, thereby improving the uniformity of single-wafer etching.

Please refer to FIG. 4 , which is a diagram showing the relationship between the position and time of applying the process liquid to the wafer by the liquid supply device according to another embodiment of the present application. The horizontal axis of FIG. 4 represents the position of the wafer, and the vertical axis represents the time of spraying the process liquid. In this embodiment, according to the result of detecting the current thickness of the wafer 20 by the thickness detection device 130, it can be known that the thickness of the edge of the wafer 20 is smaller than the thickness of the center point of the wafer 20 (that is, the etching of the edge region of the wafer The amount is greater than the etching amount in the central area of the wafer), so the host 150 can further control the liquid supply device 120 to apply the process liquid to the wafer 20 again, and the nozzle 123 of the liquid supply device 120 applies the liquid to the edge of the wafer 20 The time is less than the liquid applied by the nozzle 123 to the center point of the wafer 20 Add time. By controlling the dwell time of the nozzle 123 oscillating at different radial points of the wafer 20 , the etching amount of the etching solution on the different radial points of the wafer can be adjusted, thereby improving the uniformity of single-wafer etching.

Please refer to FIG. 5 , which shows a flowchart of a single wafer processing method according to an embodiment of the present application. The single-wafer processing method is suitable for operating the single-wafer processing apparatus 10 described above. In step S41 , the wafer 20 is placed on the turntable 110 . It should be noted that when the wafer 20 is placed on the turntable 110 , the wafer 20 is first positioned, and then the wafer 20 is fixed on the turntable 110 . Next, the initial thickness of the wafer 20 obtained by the thickness detection device 130 is controlled. According to the initial thickness and the expected target thickness, a suitable first parameter can be selected in the database. The first parameter is related to the length of time that the liquid supply device 120 applies the process liquid to the wafer 20 . Theoretically, when the operation of applying the process liquid to the wafer 20 is performed with the preset first parameters, the thickness of the wafer 20 can be reduced to the target thickness.

In step S42 , the liquid supply device 120 is controlled to apply process liquid to the wafer 20 . It should be understood that the liquid supply device 120 can be controlled to apply different process liquids or gases to the wafer 20 on the rotary table 110 according to process requirements, so as to perform operations such as etching or cleaning on the wafer 20 . As shown in FIG. 1 , when the rotating column 121 of the liquid supply device 120 rotates, the cantilever 122 can drive the nozzle 123 to reciprocate above the wafer 20 and spray the process liquid. Specifically, the nozzle 123 of the liquid supply device 120 reciprocates along the path R1. Path R1 involves moving from a point A on the edge of wafer 20 toward a center point O of wafer 20 , and then moving from center point O of wafer 20 toward another point B on the edge of wafer 20 . In this embodiment, the time for the nozzle 123 of the liquid supply device 120 to apply the liquid to the edge of the wafer 20 is longer than the time for the nozzle 123 to apply the liquid to the center of the wafer 20 . By controlling the dwell time of the nozzle 123 oscillating at different radial points of the wafer 20 , the etching amount of the etching solution on the different radial points of the wafer can be adjusted, thereby improving the uniformity of single-wafer etching.

In step S43, the process liquid remaining on the wafer 20 is removed. Optionally, the process liquid on the wafer 20 can be carried away from the surface of the wafer 20 by the centrifugal force generated by the high-speed rotation of the rotary table 110 . Optionally, clean gas can be applied to the wafer 20 through the liquid supply device 120 Process liquids on wafer 20 are removed. Optionally, the process liquid on the wafer 20 can be removed by providing a rotary table 110 with a heater and evaporating the process liquid on the wafer 20 by a heating method.

In step S44 , the thickness detection device 130 is controlled to detect the current thickness of the wafer 20 . The error thickness of the wafer 20 can be calculated by comparing the current thickness of the wafer 20 with the target thickness. Furthermore, the liquid supply device 120 can be controlled to apply the process liquid to the wafer 20 again according to the comparison result (ie, the calculated error thickness). For example, by obtaining the current thickness of the wafer 20, it can be determined whether there are specific areas of the wafer 20 with under-etched or cleaning residues. In addition, during re-etching, the host 150 can control the liquid supply device 120 to prolong the residence time of the nozzle 123 in these specific areas (ie, increase the spraying time of the process liquid) to compensate for the etching removal amount (or residue) in this area. removal), thereby improving the etch uniformity of the wafer. For example, in one embodiment, a result of the current thickness of the wafer 20 detected by the thickness detection device 130 is obtained. If the result is that the thickness of the edge of the wafer 20 is greater than the thickness of the center point of the wafer 20 (that is, the etching amount of the edge region of the wafer is smaller than the etching amount of the central region of the wafer), the single crystal of the present application The circle processing method further includes controlling the liquid supply device 120 to apply the process liquid to the wafer 20 again, and controlling the liquid application time of the nozzle 123 to the edge of the wafer 20 to be longer than the liquid application time of the nozzle 123 to the center point of the wafer 20 .

In another embodiment, a result of the current thickness of the wafer 20 detected by the thickness detection device 130 is obtained. If the result is that the thickness of the edge of the wafer 20 is smaller than the thickness of the center point of the wafer 20 (that is, the etching amount of the edge region of the wafer is greater than the etching amount of the central region of the wafer), the single crystal of the present application The circle processing method further includes controlling the liquid supply device 120 to apply the process liquid to the wafer 20 again, and controlling the liquid application time of the nozzle 123 to the edge of the wafer 20 to be shorter than the liquid application time of the nozzle 123 to the center point of the wafer 20 .

On the other hand, in the present application, the preset first parameter may be further adjusted according to the obtained comparison result to obtain the second parameter. Therefore, in the subsequent process, the liquid supply device 120 can use the second parameter to apply the process liquid to another wafer, so that only one etching step is needed to obtain the process liquid. Wafer with target thickness. That is to say, this application has established standardized process parameters (including wafer etching time, wafer rotation speed, liquid flow rate and service life, and left and right swing parameters of the spray cantilever) and wafer material database. In the case of a circle (such as the same surface structure, the same material, etc.), the appropriate process parameters can be obtained according to the database of process parameters and wafer etch thickness.

Please refer to FIG. 6 , which shows a block diagram of a single-wafer processing system according to an embodiment of the present application. The single-wafer processing system 1 includes a single-wafer processing apparatus 10 , a wafer 20 and a host 150 . The single-wafer processing apparatus 10 includes a rotary table, a liquid supply device, and a thickness detection device. The host 150 includes a database 151 , a storage 152 and a processor 153 . The memory 152 stores program instructions, and when the program instructions are executed by the processor 153, the processor 153 executes the above single-wafer processing method. Specifically, the processor 153 controls placing a wafer on a turntable; controls a liquid supply device to apply a process liquid to the wafer; removes the process liquid remaining on the wafer; and controls a thickness detection device to detect The current thickness of this wafer.

In some embodiments, when the wafer is placed on the turntable, the program instructions, when executed by the processor 153, cause the processor 153 to further execute: controlling the thickness detection device to detect the initial thickness of the wafer, and according to The initial thickness of the wafer and a target thickness determine the length of time that the liquid supply device applies the process liquid to the wafer.

In some embodiments, the program instructions, when executed by the processor 153, cause the processor 153 to further execute: compare the current thickness of the wafer with a target thickness, and control the liquid supply device to apply the process liquid again according to the comparison result to the wafer.

In some embodiments, the liquid supply device applies the process liquid to the wafer with a first parameter related to the length of time that the liquid supply device applies the process liquid to the wafer. When the program instruction is executed by the processor 153, the processor 153 further executes: obtaining a second parameter according to the comparison result, and controlling the liquid supply device to apply the process liquid to another wafer using the second parameter.

In some embodiments, the program instructions, when executed by the processor 153, cause the processor 153 to also execute: when the liquid supply device is controlled to apply the process liquid to the wafer, the liquid supply device is controlled to perform a process over the wafer Move back and forth. The path of reciprocation includes moving from a point on the edge of the wafer toward a center point of the wafer, and then moving from the center point of the wafer toward another point on the edge of the wafer.

In some embodiments, the program instructions, when executed by the processor 153, cause the processor 153 to further execute: obtaining a result of the current thickness of the wafer detected by the thickness detection device. If the thickness of the edge of the wafer is greater than the thickness of the center point of the wafer, control the liquid supply device to apply the process liquid to the wafer again, and control the nozzle to apply the liquid to the edge of the wafer The time is greater than the liquid application time of the nozzle to the center point of the wafer. If the thickness of the edge of the wafer is less than the thickness of the center point of the wafer, control the liquid supply device to apply the process liquid to the wafer again, and control the nozzle to apply the liquid to the edge of the wafer The time is less than the liquid application time of the nozzle to the center point of the wafer.

In summary, the present application provides a single-wafer processing apparatus, a single-wafer processing method, and a single-wafer processing system. By detecting the thickness of the wafer on an integrated single machine, the process parameters can be adjusted in real time to compensate for the amount of etching removal, thereby effectively improving the etching uniformity of the wafer and improving the process accuracy.

The above are only the preferred embodiments of the present disclosure. It should be pointed out that for those skilled in the art, without departing from the principles of the present disclosure, several improvements and modifications can be made, and these improvements and modifications should also be regarded as the present disclosure. protected range.

10: Single Wafer Processing Equipment

110: Rotary table

120: Liquid supply device

121: Rotating column

122: Cantilever

123: Nozzle

130: Thickness detection device

131: Pillar

132: beam arm

133: Sensor

140: Liquid recovery device

150: host

151:Database

20: Wafer

Claims (6)

A single-wafer processing equipment, comprising: a rotary table configured to place a wafer; a liquid supply device disposed above the turntable and configured to apply process liquid to the wafer; and A thickness detection device is disposed above the rotary table, wherein the thickness detection device is configured to detect the current thickness of the wafer when it is judged that the process liquid does not remain on the wafer. The single-wafer processing equipment of claim 1, wherein the single-wafer processing equipment further comprises a host, the host is in communication connection with the liquid supply device and the thickness detection device, and the host is configured to compare the current thickness of the wafer and a target thickness, and the host controls the liquid supply device to apply the process liquid to the wafer again according to the comparison result. The single-wafer processing apparatus of claim 2, wherein the host includes a database, the database stores a first parameter, and the first parameter is related to the length of time that the liquid supply device applies the process liquid to the wafer, The host is further configured to obtain a second parameter according to the comparison result, and the host controls the liquid supply device to apply the process liquid to another wafer based on the second parameter. The single-wafer processing equipment of claim 1, wherein the liquid supply device comprises: a rotating column; a cantilever, wherein one end of the cantilever is connected to the rotating column, and the other end of the cantilever extends above the rotating table; a nozzle, wherein the nozzle is fixed on the other end of the cantilever, and when the rotating column rotates, the cantilever drives the nozzle to reciprocate above the wafer and spray the process liquid. The single-wafer processing apparatus of claim 4, wherein the path of the reciprocating movement of the nozzle includes moving from a point on the edge of the wafer toward a center point of the wafer, and then from the center point of the wafer toward a center point of the wafer Another point on the edge of the wafer moves. The single-wafer processing apparatus of claim 5, wherein in response to the result of the current thickness of the wafer detected by the thickness detection device, the thickness of the edge of the wafer is greater than the thickness of the center point of the wafer, the The liquid supply device applies the process liquid to the wafer again, and the liquid application time of the nozzle to the edge of the wafer is greater than the liquid application time of the nozzle to the center point of the wafer; and In response to the result of the current thickness of the wafer detected by the thickness detection device that the thickness of the edge of the wafer is less than the thickness of the center point of the wafer, the liquid supply device applies the process liquid to the wafer again. circle, and the liquid application time of the nozzle to the edge of the wafer is less than the liquid application time of the nozzle to the center point of the wafer.

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