CN105225936A - A kind of method of thickness of grid oxide layer of eliminating the effects of the act and device - Google Patents
A kind of method of thickness of grid oxide layer of eliminating the effects of the act and device Download PDFInfo
- Publication number
- CN105225936A CN105225936A CN201510663203.3A CN201510663203A CN105225936A CN 105225936 A CN105225936 A CN 105225936A CN 201510663203 A CN201510663203 A CN 201510663203A CN 105225936 A CN105225936 A CN 105225936A
- Authority
- CN
- China
- Prior art keywords
- thickness
- oxide layer
- grid oxide
- effects
- influential
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 48
- 230000000694 effects Effects 0.000 title claims abstract description 24
- 239000001301 oxygen Substances 0.000 claims abstract description 45
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 45
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 40
- 239000007789 gas Substances 0.000 claims abstract description 32
- 239000001257 hydrogen Substances 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000012545 processing Methods 0.000 description 23
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 22
- 239000001272 nitrous oxide Substances 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000505 pernicious effect Effects 0.000 description 2
- WSLDOOZREJYCGB-UHFFFAOYSA-N 1,2-Dichloroethane Chemical group ClCCCl WSLDOOZREJYCGB-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000802 nitrating effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
The present invention relates to semiconductor manufacturing facility field, particularly relate to a kind of method and device of thickness of grid oxide layer of eliminating the effects of the act.Method comprises: board operation is made thickness of grid oxide layer is influential; Prohibit to fall to make thickness of grid oxide layer is influential; Trigger making of wet oxygen.The inventive system comprises: body of heater; Affect gas inlet, be arranged at the below of body of heater, pass into the influential gas of thickness of grid oxide layer; Wet oxygen air inlet, is arranged at the below of body of heater, passes into wet oxygen to remove the influential gas of thickness of grid oxide layer; Exhaust outlet, is arranged at the top of body of heater, discharges the gas making generation in body of heater.
Description
Technical field
The present invention relates to semiconductor manufacturing facility field, particularly relate to a kind of method and device of thickness of grid oxide layer of eliminating the effects of the act.
Background technology
The size of current semiconductor constantly diminishes, and narrow down to current several nanometers from the grade of several micron (micrometer), semiconductor dimensions constantly reduces, and allows the usefulness of integrated circuit greatly promote.First less transistor signifies that its passage length reduces, and allows the equivalent resistance of passage also reduce, and more multiple current can be allowed to pass through, and the area of transistor is less, and the cost manufacturing chip just can reduce, and can load more highdensity chip in same encapsulation.The wafer size that a slice integrated circuit manufacture process uses is fixing, if so chip area is less, onesize wafer just can the more chip of output, so cost just becomes lower.The size of semiconductor diminishes and means that work gate area reduces, and so can reduce the grid capacitance of equivalence.Less grid has thinner grid oxic horizon usually.The board of current growth grid oxic horizon has following gas: hydrogen (wet oxygen), oxygen (dry oxygen, wet oxygen), TLC (dichloroethylene removes metal ion), N2O (nitrous oxide, nitrating).Change unrestricted between different processing procedure.But after N2O high-temperature baking, and then transfer the gate oxidation layer growth of wet oxygen to, thickness can partially thick 0.5A, can have a huge impact the electrical thickness of product.
Summary of the invention
Easily be subject to the problem of processing procedure impact for thickness of grid oxide layer of the prior art, the invention provides a kind of method and device of thickness of grid oxide layer of eliminating the effects of the act, to reduce the impact on gate oxide thickness.
The present invention adopts following technical scheme:
Eliminate the effects of the act the method for thickness of grid oxide layer, described method comprises:
Board operation is made thickness of grid oxide layer is influential;
Prohibit and fall describedly to make thickness of grid oxide layer is influential;
Trigger making of wet oxygen.
Preferably, described method also comprises:
Trigger after wet oxygen makes, automatically cancel and describedly to make thickness of grid oxide layer is influential.
Preferably, described method specifically comprises: automatically prohibit to fall and describedly to make thickness of grid oxide layer is influential.
Preferably, described method specifically comprises: automatically trigger making of described wet oxygen.
Preferably, describedly N2O high-temperature baking is made for thickness of grid oxide layer is influential.
Eliminate the effects of the act the device of thickness of grid oxide layer, described device comprises:
Body of heater;
Affect gas inlet, be arranged at the below of described body of heater, pass into the influential gas of thickness of grid oxide layer;
Wet oxygen air inlet, is arranged at the below of described body of heater, passes into wet oxygen described to the influential gas of thickness of grid oxide layer to remove;
Exhaust outlet, is arranged at the top of described body of heater, discharges the gas making generation in described body of heater.
Preferably, described device is the heater of five warm areas.
Preferably, described device also comprises:
Hydrogen-oxygen igniter, is connected with described wet oxygen air inlet, lights the hydrogen and oxygen that pass into, to produce described wet oxygen.
Preferably, described mass flow controller controls described hydrogen and described oxygen passes in described hydrogen-oxygen igniter.
Preferably, the described gas inlet that affects passes into N2 and/or N2O gas.
The invention has the beneficial effects as follows:
The present invention board previous processing procedure can influential to thickness of grid oxide layer time, when its work, the processing procedure of grid oxic horizon is directly prohibited to fall.Previous processing procedure terminates the processing procedure of a rear automatic triggering wet oxygen, takes away, residual influential gas to eliminate the impact of thickness of grid oxide layer.
Accompanying drawing explanation
Fig. 1 is the method schematic diagram of a kind of thickness of grid oxide layer embodiment one of eliminating the effects of the act of the present invention;
Fig. 2 is the structural representation of the device embodiment two of a kind of thickness of grid oxide layer of eliminating the effects of the act of the present invention;
Fig. 3 a-3b is the processing procedure figure of the device embodiment two of a kind of thickness of grid oxide layer of eliminating the effects of the act of the present invention.
Embodiment
It should be noted that, when not conflicting, following technical proposals, can combine between technical characteristic mutually.
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is further described:
Fig. 1 is the method schematic diagram of a kind of thickness of grid oxide layer embodiment one of eliminating the effects of the act of the present invention; As shown in Figure 1, the method for the present embodiment mainly comprises: board operation is made thickness of grid oxide layer is influential; Prohibit to fall to make thickness of grid oxide layer is influential; Trigger making of wet oxygen.
In the present embodiment, board operation is to after the influential processing procedure of thickness of grid oxide layer, control system in board can prohibit to fall grid oxic horizon processing procedure automatically, when influential processing procedure terminates the processing procedure automatically triggering wet oxygen, taken away by residual pernicious gas, control system also can cancel the ban to grid oxic horizon processing procedure automatically.
The present invention's preferred embodiment can be N2O high-temperature baking to influential the making of thickness of grid oxide layer.
The present embodiment is complete to after the influential processing procedure of thickness of grid oxide layer by board operation, automatically triggers the processing procedure of a wet oxygen, is taken away by residual influential gas, eliminates the impact of thickness of grid oxide layer.
Embodiment two
Fig. 2 is the structural representation of device (APfurnace) embodiment two of a kind of thickness of grid oxide layer of eliminating the effects of the act of the present invention, as shown in Figure 2, the device of the present embodiment comprises: body of heater 1, this body of heater 1 can be five warm area (top, TC, CTR, BC, BTM) heater, returning apparatus also comprises affects gas inlet 4, it is arranged at the below of body of heater 1, pass into the influential gas of thickness of grid oxide layer, the gas that affects wherein passed into can be N2 (nitrogen), N2O (nitrous oxide), wet oxygen air inlet 3 (reacting gas inlet (gasintakeport)) is also comprised in device, be arranged at the below of body of heater 1, pass into wet oxygen to remove the influential gas of thickness of grid oxide layer, the gas passed into can be hydrogen and oxygen, preferred embodiment, wet oxygen air inlet 3 can also be connected with hydrogen-oxygen igniter 2 (torch), light the hydrogen and oxygen that pass into, to produce wet oxygen, the hydrogen passed into and oxygen can by mass flow controller (massflowcontroller, MFC) flow of the reacting gas flowing into body of heater 1 is controlled, device also comprises exhaust outlet 5, is arranged at the top of body of heater 1, discharges the gas making generation in body of heater 1.Exhaust outlet 5 can also be connected with exhaust controller 6 (ExhaustController, E/C), gas is carried out factory's business exhaust (Exhaust).Device in the present embodiment can be normal pressure (ATM) state when working.
Fig. 3 a-3b is the processing procedure figure of the device embodiment two of a kind of thickness of grid oxide layer of eliminating the effects of the act of the present invention, and the present embodiment is used for eliminating the impact on thickness of grid oxide layer.When the previous processing procedure of board can have impact to thickness of grid oxide layer, when previous processing procedure work, the processing procedure of grid oxic horizon is directly prohibited to fall.Previous processing procedure terminates the processing procedure of a rear automatic triggering wet oxygen, is taken away by residual influential gas, eliminates the impact of thickness of grid oxide layer, the thickness of better management and control grid oxic horizon.As shown in Figure 3 a-3b, previous processing procedure can be NMOSO high-temperature baking, adopts wet oxygen to remove residual N2O afterwards.
In sum, the present invention is in order to better management and control thickness of grid oxide layer, when the processing procedure having high temperature N2O to toast triggers the processing procedure of wet oxygen automatically, takes away N2O, eliminates its impact on thickness of grid oxide layer.Comprise other gases to the thickness effect of grid oxic horizon and use other method to take away pernicious gas.
By illustrating and accompanying drawing, giving the exemplary embodiments of the ad hoc structure of embodiment, based on the present invention's spirit, also can do other conversion.Although foregoing invention proposes existing preferred embodiment, but these contents are not as limitation.
For a person skilled in the art, after reading above-mentioned explanation, various changes and modifications undoubtedly will be apparent.Therefore, appending claims should regard the whole change and correction of containing true intention of the present invention and scope as.In Claims scope, the scope of any and all equivalences and content, all should think and still belong to the intent and scope of the invention.
Claims (10)
1. eliminate the effects of the act the method for thickness of grid oxide layer, it is characterized in that, described method comprises:
Board operation is made thickness of grid oxide layer is influential;
Prohibit and fall describedly to make thickness of grid oxide layer is influential;
Trigger making of wet oxygen.
2. the method for thickness of grid oxide layer of eliminating the effects of the act according to claim 1, is characterized in that, described method also comprises:
Trigger after wet oxygen makes, automatically cancel and describedly to make thickness of grid oxide layer is influential.
3. the method for thickness of grid oxide layer of eliminating the effects of the act according to claim 1, is characterized in that, described method specifically comprises: automatically prohibit to fall and describedly to make thickness of grid oxide layer is influential.
4. the method for thickness of grid oxide layer of eliminating the effects of the act according to claim 1, is characterized in that, described method specifically comprises: automatically trigger making of described wet oxygen.
5. the method for thickness of grid oxide layer of eliminating the effects of the act according to claim 1, is characterized in that, is describedly made for N2O high-temperature baking to thickness of grid oxide layer is influential.
6. eliminate the effects of the act the device of thickness of grid oxide layer, it is characterized in that, described device comprises:
Body of heater;
Affect gas inlet, be arranged at the below of described body of heater, pass into the influential gas of thickness of grid oxide layer;
Wet oxygen air inlet, is arranged at the below of described body of heater, passes into wet oxygen described to the influential gas of thickness of grid oxide layer to remove;
Exhaust outlet, is arranged at the top of described body of heater, discharges the gas making generation in described body of heater.
7. the device of thickness of grid oxide layer of eliminating the effects of the act according to claim 6, is characterized in that, described device is the heater of five warm areas.
8. the device of thickness of grid oxide layer of eliminating the effects of the act according to claim 6, is characterized in that, described device also comprises:
Hydrogen-oxygen igniter, is connected with described wet oxygen air inlet, lights the hydrogen and oxygen that pass into, to produce described wet oxygen.
9. the device of thickness of grid oxide layer of eliminating the effects of the act according to claim 8, is characterized in that, described mass flow controller controls described hydrogen and described oxygen passes in described hydrogen-oxygen igniter.
10. the device of thickness of grid oxide layer of eliminating the effects of the act according to claim 6, is characterized in that, the described gas inlet that affects passes into N2 and/or N2O gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510663203.3A CN105225936A (en) | 2015-10-14 | 2015-10-14 | A kind of method of thickness of grid oxide layer of eliminating the effects of the act and device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510663203.3A CN105225936A (en) | 2015-10-14 | 2015-10-14 | A kind of method of thickness of grid oxide layer of eliminating the effects of the act and device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105225936A true CN105225936A (en) | 2016-01-06 |
Family
ID=54994818
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510663203.3A Pending CN105225936A (en) | 2015-10-14 | 2015-10-14 | A kind of method of thickness of grid oxide layer of eliminating the effects of the act and device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105225936A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6221791B1 (en) * | 1999-06-02 | 2001-04-24 | Taiwan Semiconductor Manufacturing Company, Ltd | Apparatus and method for oxidizing silicon substrates |
| US20040168638A1 (en) * | 2001-05-09 | 2004-09-02 | Katsutoshi Ishii | System and method for heat treating semiconductor |
| CN103894381A (en) * | 2014-03-20 | 2014-07-02 | 上海华力微电子有限公司 | Furnace pipe cleaning method |
| CN104259153A (en) * | 2014-07-24 | 2015-01-07 | 上海华力微电子有限公司 | Furnace tube cleaning process |
-
2015
- 2015-10-14 CN CN201510663203.3A patent/CN105225936A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6221791B1 (en) * | 1999-06-02 | 2001-04-24 | Taiwan Semiconductor Manufacturing Company, Ltd | Apparatus and method for oxidizing silicon substrates |
| US20040168638A1 (en) * | 2001-05-09 | 2004-09-02 | Katsutoshi Ishii | System and method for heat treating semiconductor |
| CN103894381A (en) * | 2014-03-20 | 2014-07-02 | 上海华力微电子有限公司 | Furnace pipe cleaning method |
| CN104259153A (en) * | 2014-07-24 | 2015-01-07 | 上海华力微电子有限公司 | Furnace tube cleaning process |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102703987B (en) | Low-temperature phosphorus gettering diffusion process based on removal of metal impurities in polycrystalline silicon | |
| CN104393107B (en) | A kind of high square resistance crystal silicon cell low pressure diffusion technique | |
| CN101447529B (en) | Silica generation technology during manufacturing process of selective emitter solar cells | |
| CN104409339B (en) | A kind of P method of diffusion of silicon chip and the preparation method of solaode | |
| Fair | Oxidation, impurity diffusion, and defect growth in silicon—An overview | |
| CN104269459A (en) | Decompression diffusion technology for manufacturing high-square-resistance battery pieces | |
| CN104681663B (en) | The manufacturing process of solar cell and the treatment process of solar cell | |
| CN105304753A (en) | N-type cell boron diffusion technology | |
| CN105780127B (en) | A kind of phosphorus diffusion method of crystal silicon solar energy battery | |
| CN111354838B (en) | Solar cell, preparation method thereof and processing method of N-type doped silicon film | |
| CN106856215A (en) | Solar battery sheet method of diffusion | |
| CN104882516A (en) | High-temperature low-pressure method for silicon wafer diffusion | |
| CN107534064A (en) | Solar cell inactivating layer | |
| CN102931287A (en) | N-type battery slice and preparation method thereof | |
| CN111599898A (en) | Method for manufacturing crystalline silicon solar cell and crystalline silicon solar cell | |
| CN103928568A (en) | Heat treatment method capable of improving efficiency of P-type back passivation battery | |
| CN102931068A (en) | Method for preparing germanium-base MOSFET grate medium | |
| CN103903986A (en) | Manufacturing method of gate dielectric layer | |
| CN103715300B (en) | A kind of method spreading rear low square resistance silicon chip and doing over again | |
| CN105225936A (en) | A kind of method of thickness of grid oxide layer of eliminating the effects of the act and device | |
| CN107534070A (en) | Solar cell emitter region is manufactured using substrate level ion implanting | |
| CN103094410B (en) | A kind of phosphorus diffusion control method for silicon chip of solar cell | |
| WO2024007495A1 (en) | Modified tunnel oxide layer and preparation method, topcon structure and preparation method, and solar cell | |
| CN103730541B (en) | Solar cell nanometer emitter stage and preparation method thereof | |
| CN110212037A (en) | The PERC solar battery and preparation method thereof of Selective long-range DEPT front passivation |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160106 |