CN105220214A - A kind of preparation method of graphene film - Google Patents
A kind of preparation method of graphene film Download PDFInfo
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Abstract
The invention provides a kind of preparation method of graphene film, comprise the following steps: S1: a Copper Foil is provided; S2: electrochemical etching is carried out to described copper foil surface; S3: adopt chemical Vapor deposition process at described copper foil surface growing graphene film.The preparation method of graphene film of the present invention improves for existing method, by carrying out electrochemical etching on metal copper foil surface, form the nucleation core of multi-layer graphene, more just can grow the graphene film of 2 ~ 3 layers with chemical Vapor deposition process at copper foil surface.The present invention can the controlled multi-layer graphene film of the large area deposition number of plies, practical significant to Graphene.
Description
Technical field
The invention belongs to material and prepare manufacture field, relate to a kind of preparation method of graphene film.
Background technology
Graphene film is by the former molecular crystal film material of monolayer carbon, has high light transmittance, good electroconductibility and snappiness, all has a wide range of applications in Flexible Displays, solar cell, lithium ion battery and sensor.Graphene can as the starting material of transparency conductive electrode and field-effect transistor in various flexible photoelectric device.These application all require that the Graphene prepared has the performance that area is large, square resistance is low and transmitance is high.
The technique of the most applicable preparation big area, high-quality graphene film is with chemical Vapor deposition process growing graphene on metal copper foil at present.Its detailed process is: the surface deionized water of metal copper foil, alcohol and acetone equal solvent are cleaned up, put into high temperature process furnances after drying up; Discharge inner air tube and also pass into hydrogen, by diamond heating to about 1000 DEG C, then the methane passing into certain flow is as carbon source for growth graphene film; After having grown, close methane, tube furnace is down to room temperature and takes out Copper Foil; So just obtain the graphene film of growth at copper foil surface.
This growth method utilizes metal copper foil to carry out growing graphene film as catalyzer, and the character of pattern to graphene film of copper foil surface has material impact.Bilayer graphene can be formed at the fault location of copper foil surface, and after other regions cover with single-layer graphene, catalyzer is intercepted by Graphene, just cannot continue to play a role again.So the graphene film major part region of finally preparing is individual layer, but be wherein mingled with the bilayer graphene of a small amount of dispersion.In actual applications, the square resistance of single-layer graphene is too high, can not satisfy the demand.And continuous print square resistance that is double-deck or multi-layer graphene is lower, energy band structure also can change, and can give play to more application potential.Therefore, practical significant to Graphene of the multi-layer graphene film that the large area deposition number of plies is controlled.
Therefore, how to provide a kind of preparation method of graphene film, with the graphene film that the large area deposition number of plies is controlled, become the important technological problems that those skilled in the art are urgently to be resolved hurrily.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide a kind of preparation method of graphene film, cannot grow multi-layer graphene, problem prepared by the big area realizing multi-layer graphene film for solving existing growth method on Copper Foil.
For achieving the above object and other relevant objects, the invention provides a kind of preparation method of graphene film, comprise the following steps:
S1 a: Copper Foil is provided;
S2: electrochemical etching is carried out to described copper foil surface;
S3: adopt chemical Vapor deposition process at described copper foil surface growing graphene film.
As a kind of preferred version of the preparation method of graphene film of the present invention, in described step S1, the thickness range of described Copper Foil is 10 μm ~ 1mm.
As a kind of preferred version of the preparation method of graphene film of the present invention, in described step S1, also comprise the step that described Copper Foil is cleaned.
As a kind of preferred version of the preparation method of graphene film of the present invention, the method that described Copper Foil cleans is comprised: with deionized water and organic solvent ultrasonic cleaning copper foil surface; After ultrasonic cleaning is complete, nitrogen is adopted to be dried up by described copper foil surface.
As a kind of preferred version of the preparation method of graphene film of the present invention, described organic solvent comprise in ethanol, Virahol, acetone and acetic acid one or more.
As a kind of preferred version of the preparation method of graphene film of the present invention, in described step S2: the method for described copper foil surface being carried out to electrochemical etching comprises: described Copper Foil is put into acid solution as anode, and a metallic cathode is provided, between described Copper Foil and described metallic cathode, apply voltage, electrochemical etching is carried out to described copper foil surface.
As a kind of preferred version of the preparation method of graphene film of the present invention, described acid solution comprise in sulfuric acid, hydrochloric acid, nitric acid, ortho-phosphoric acid and acetic acid one or more.
As a kind of preferred version of the preparation method of graphene film of the present invention, the material of described metallic cathode comprise in gold, platinum, silver, copper, iron and aluminium one or more.
As a kind of preferred version of the preparation method of graphene film of the present invention, the scope of described voltage is 1 ~ 10V, and the time range of electrochemical etching is 1 ~ 30min.
As a kind of preferred version of the preparation method of graphene film of the present invention, in described step S3, first the described Copper Foil through electrochemical etching is cleaned, and then at its surface growth graphene film.
As a kind of preferred version of the preparation method of graphene film of the present invention, the method that described Copper Foil cleans is comprised: adopt copper foil surface described in deionized water rinsing at least one times, then adopt nitrogen to be dried up by described copper foil surface.
As a kind of preferred version of the preparation method of graphene film of the present invention, in described step S3, chemical Vapor deposition process is adopted to comprise at described copper foil surface growing graphene film: described Copper Foil is put into heating installation, discharge the air in described heating installation, and pass into hydrogen, then described heating installation is heated to preset temp, then passes into carbon-source gas, grow graphene film at described copper foil surface.
As a kind of preferred version of the preparation method of graphene film of the present invention, after having grown, close carbon-source gas, described heating installation is down to room temperature, and takes out the Copper Foil of surface growth graphene film.
As a kind of preferred version of the preparation method of graphene film of the present invention, described heating installation is tube furnace.
As a kind of preferred version of the preparation method of graphene film of the present invention, described preset temperature range is 900 ~ 1060 DEG C.
As a kind of preferred version of the preparation method of graphene film of the present invention, described carbon-source gas comprise in methane, ethane, propane, acetylene, propine and ethanol one or more.
As a kind of preferred version of the preparation method of graphene film of the present invention, the growth time of described graphene film is 5 ~ 120min.
As a kind of preferred version of the preparation method of graphene film of the present invention, described graphene film comprises at least one in double-deck and three layer graphenes.
As mentioned above, the preparation method of graphene film of the present invention, there is following beneficial effect: the present invention with the preparation method of Graphene for research object, improve for existing method, by carrying out electrochemical etching on metal copper foil surface, form the nucleation core of multi-layer graphene, more just can grow the graphene film of 2 ~ 3 layers with chemical Vapor deposition process at copper foil surface.The present invention can the controlled multi-layer graphene film of the large area deposition number of plies, practical significant to Graphene.
Accompanying drawing explanation
Fig. 1 is shown as the process flow sheet of the preparation method of graphene film of the present invention.
The structural representation of the Copper Foil that the preparation method that Fig. 2 is shown as graphene film of the present invention provides.
The preparation method that Fig. 3 is shown as graphene film of the present invention carries out the schematic diagram of electrochemical etching to described copper foil surface.
Fig. 4 is shown as the structural representation through the Copper Foil of electrochemical etching in the preparation method of graphene film of the present invention.
The preparation method that Fig. 5 is shown as graphene film of the present invention in tube furnace in the schematic diagram of copper foil surface growing graphene film.
Fig. 6 is shown as the Copper Foil schematic diagram that surface growth in the preparation method of graphene film of the present invention has graphene film.
Element numbers explanation
S1 ~ S3 step
101 Copper Foils
102 acid solutions
103 metallic cathodes
104 be etched after copper foil surface
105 boiler tubes
106 inlet mouths
107 air outlets
108 graphene films
Embodiment
Below by way of specific specific examples, embodiments of the present invention are described, those skilled in the art the content disclosed by this specification sheets can understand other advantages of the present invention and effect easily.The present invention can also be implemented or be applied by embodiments different in addition, and the every details in this specification sheets also can based on different viewpoints and application, carries out various modification or change not deviating under spirit of the present invention.
Refer to Fig. 1 to Fig. 6.It should be noted that, the diagram provided in the present embodiment only illustrates basic conception of the present invention in a schematic way, then only the assembly relevant with the present invention is shown in graphic but not component count, shape and size when implementing according to reality is drawn, it is actual when implementing, and the kenel of each assembly, quantity and ratio can be a kind of change arbitrarily, and its assembly layout kenel also may be more complicated.
The invention provides a kind of preparation method of graphene film, refer to Fig. 1, be shown as the process flow sheet of the method, comprise the following steps:
S1 a: Copper Foil is provided;
S2: electrochemical etching is carried out to described copper foil surface;
S3: adopt chemical Vapor deposition process at described copper foil surface growing graphene film.
First refer to Fig. 2, perform step S1: provide a Copper Foil 101.
Concrete, described Copper Foil 101 is as the substrate of graphene growth and catalyzer.In the present embodiment, the thickness range of described Copper Foil 101 is 10 μm ~ 1mm, preferably adopts the Copper Foil of 25 micron thickness.
Concrete, before growing graphene film, also comprise the step that described Copper Foil is cleaned, to remove the impurity of copper foil surface, for graphene film growth provides clean surface, improve the quality of graphene film.
Exemplarily, the method that described Copper Foil cleans is comprised: with deionized water and organic solvent ultrasonic cleaning copper foil surface; After ultrasonic cleaning is complete, nitrogen is adopted to be dried up by described copper foil surface.
Concrete, described organic solvent comprise in ethanol, Virahol, acetone and acetic acid one or more.The time of described ultrasonic cleaning is 5 ~ 30 minutes.In the present embodiment, adopt ethanol and acetone as organic solvent, each ultrasonic time 5 minutes.
Then refer to Fig. 3 and Fig. 4, perform step S2: electrochemical etching is carried out to described Copper Foil 101 surface.
Electrochemical etching refers to and utilizes the electrochemical reaction of anode dissolution to carry out etching method to metal material surface.In this step, the object of carrying out electrochemical etching to described Copper Foil 101 surface is the nucleation core forming multi-layer graphene at copper foil surface.
Exemplarily, following process is comprised to the method that described copper foil surface carries out electrochemical etching:
As shown in Figure 3, described Copper Foil 101 is put into acid solution 102 as anode, and a metallic cathode 103 is provided, between described Copper Foil 101 and described metallic cathode 103, apply voltage, electrochemical etching is carried out to described Copper Foil 101 surface.
Concrete, described acid solution comprise in sulfuric acid, hydrochloric acid, nitric acid, ortho-phosphoric acid and acetic acid one or more.The material of described metallic cathode comprise in gold, platinum, silver, copper, iron and aluminium one or more.The scope of described voltage is 1 ~ 10V, and the time range of electrochemical etching is 1 ~ 30min.
In the present embodiment, adopt the ortho-phosphoric acid of 85% volume fraction, adopt copper as the material of metallic cathode, between described Copper Foil 101 and described metallic cathode 103, apply the voltage of 5V, the electrochemical etching time is 5 minutes.
As shown in Figure 4, be shown as the structural representation through the Copper Foil of electrochemical etching in the preparation method of graphene film of the present invention, illustrated therein is the copper foil surface after being etched 104.
Refer to Fig. 5 and Fig. 6 again, perform step S3: adopt chemical Vapor deposition process at described Copper Foil 101 surface growth graphene film 108.
In the present embodiment, first the described Copper Foil through electrochemical etching is cleaned, and then at its surface growth graphene film.
Exemplarily, the method that described Copper Foil cleans is comprised: adopt copper foil surface described in deionized water rinsing at least one times, such as 3 ~ 5 times, then adopt nitrogen to be dried up by described copper foil surface.This cleaning step can remove the residual electrolytic solution of described copper foil surface.
In the present embodiment, chemical Vapor deposition process is adopted to comprise at described copper foil surface growing graphene film: described Copper Foil is put into heating installation, discharge the air in described heating installation, and pass into hydrogen, then described heating installation is heated to preset temp, pass into carbon-source gas again, grow graphene film at described copper foil surface.Wherein, described preset temperature range is 900 ~ 1060 DEG C, described carbon-source gas comprise in methane, ethane, propane, acetylene, propine and ethanol one or more, the growth time of described graphene film is 5 ~ 120min.
Exemplarily, described heating installation adopts tube furnace.As shown in Figure 5, after discharging the air in boiler tube 105 by air outlet 107, pass into by inlet mouth 106 hydrogen that flow is 50sccm, by diamond heating to after 1000 DEG C, then pass into the methane that flow is 10sccm, grow graphene film.Certainly, in other embodiments, also can adopt miscellaneous equipment and reaction conditions as required, should too not limit the scope of the invention herein.
After having grown, close carbon-source gas, described heating installation is down to room temperature, and takes out the Copper Foil of surface growth graphene film.As shown in Figure 6, the surface growth being shown as described Copper Foil 101 has the schematic diagram of graphene film 108.In the present embodiment, described graphene film is bilayer graphene.
In other embodiments, also can, by gas flow and growth time during growth regulation, make described graphene film 108 be three layer graphenes, or described graphene film 108 subregion be bilayer graphene, subregion is three layer graphenes.Wherein, during growth, carbon source concentration is higher, growth time is longer, more easily obtains the Graphene of three layers.The test of laser microscope and Raman spectrum shows that the number of plies of the graphene film obtained can regulate and control in 2 ~ 3 layers.
In sum, the preparation method of graphene film of the present invention improves for existing method, by carrying out electrochemical etching on metal copper foil surface, forming the nucleation core of multi-layer graphene, more just can grow the graphene film of 2 ~ 3 layers with chemical Vapor deposition process at copper foil surface.The present invention can the controlled multi-layer graphene film of the large area deposition number of plies, practical significant to Graphene.So the present invention effectively overcomes various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all without prejudice under spirit of the present invention and category, can modify above-described embodiment or changes.Therefore, such as have in art usually know the knowledgeable do not depart from complete under disclosed spirit and technological thought all equivalence modify or change, must be contained by claim of the present invention.
Claims (18)
1. a preparation method for graphene film, is characterized in that, comprises the following steps:
S1 a: Copper Foil is provided;
S2: electrochemical etching is carried out to described copper foil surface;
S3: adopt chemical Vapor deposition process at described copper foil surface growing graphene film.
2. the preparation method of graphene film according to claim 1, is characterized in that: in described step S1, and the thickness range of described Copper Foil is 10 μm ~ 1mm.
3. the preparation method of graphene film according to claim 1, is characterized in that: in described step S1, also comprises the step of cleaning described Copper Foil.
4. the preparation method of graphene film according to claim 3, is characterized in that: comprise the method that described Copper Foil cleans: with deionized water and organic solvent ultrasonic cleaning copper foil surface; After ultrasonic cleaning is complete, nitrogen is adopted to be dried up by described copper foil surface.
5. the preparation method of graphene film according to claim 4, is characterized in that: described organic solvent comprise in ethanol, Virahol, acetone and acetic acid one or more.
6. the preparation method of graphene film according to claim 1, it is characterized in that: in described step S2: the method for described copper foil surface being carried out to electrochemical etching comprises: described Copper Foil is put into acid solution as anode, and a metallic cathode is provided, between described Copper Foil and described metallic cathode, apply voltage, electrochemical etching is carried out to described copper foil surface.
7. the preparation method of graphene film according to claim 6, is characterized in that: described acid solution comprise in sulfuric acid, hydrochloric acid, nitric acid, ortho-phosphoric acid and acetic acid one or more.
8. the preparation method of graphene film according to claim 6, is characterized in that: the material of described metallic cathode comprise in gold, platinum, silver, copper, iron and aluminium one or more.
9. the preparation method of graphene film according to claim 6, is characterized in that: the scope of described voltage is 1 ~ 10V, and the time range of electrochemical etching is 1 ~ 30min.
10. the preparation method of graphene film according to claim 1, is characterized in that: in described step S3, is first cleaned by the described Copper Foil through electrochemical etching, and then at its surface growth graphene film.
The preparation method of 11. graphene films according to claim 10, is characterized in that: comprise the method that described Copper Foil cleans: adopt copper foil surface described in deionized water rinsing at least one times, then adopt nitrogen to be dried up by described copper foil surface.
The preparation method of 12. graphene films according to claim 1, it is characterized in that: in described step S3, chemical Vapor deposition process is adopted to comprise at described copper foil surface growing graphene film: described Copper Foil is put into heating installation, discharge the air in described heating installation, and pass into hydrogen, then described heating installation is heated to preset temp, then passes into carbon-source gas, grow graphene film at described copper foil surface.
The preparation method of 13. graphene films according to claim 12, is characterized in that: after having grown, and closes carbon-source gas, described heating installation is down to room temperature, and takes out the Copper Foil of surface growth graphene film.
The preparation method of 14. graphene films according to claim 12, is characterized in that: described heating installation is tube furnace.
The preparation method of 15. graphene films according to claim 12, is characterized in that: described preset temperature range is 900 ~ 1060 DEG C.
The preparation method of 16. graphene films according to claim 12, is characterized in that: described carbon-source gas comprise in methane, ethane, propane, acetylene, propine and ethanol one or more.
The preparation method of 17. graphene films according to claim 12, is characterized in that: the growth time of described graphene film is 5 ~ 120min.
The preparation method of 18. graphene films according to claim 1, is characterized in that: described graphene film comprises at least one in double-deck and three layer graphenes.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105836735A (en) * | 2016-03-25 | 2016-08-10 | 西安电子科技大学 | Preparation method for ultra-three-dimension graphene |
| CN106698408A (en) * | 2016-12-30 | 2017-05-24 | 武汉理工大学 | Concave structure monocrystalline graphene and preparation method thereof |
| CN107037933A (en) * | 2016-02-04 | 2017-08-11 | 中国科学院金属研究所 | A kind of preparation method of the grapheme capacitive touch screen of three layers of transparent electrode structure |
| CN108539581A (en) * | 2018-05-23 | 2018-09-14 | 西北核技术研究所 | A kind of Metal Substrate graphene film cathode gas spark switch |
| CN109440226A (en) * | 2018-06-29 | 2019-03-08 | 同济大学 | A kind of preparation method of high-strength light conductive graphene fiber |
| CN111741607A (en) * | 2020-06-19 | 2020-10-02 | 辽宁格莱菲尔健康科技有限公司 | Method for compositely integrating reduced graphene oxide high-sensitivity sensing circuit and latex |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0878817A (en) * | 1994-08-31 | 1996-03-22 | Tsurumi Soda Co Ltd | Etching method |
| EP0709494A2 (en) * | 1994-10-06 | 1996-05-01 | Circuit Foil Japan Co., Ltd. | Method of surface-roughening treatment of copper foil |
| CN102134067A (en) * | 2011-04-18 | 2011-07-27 | 北京大学 | Method for preparing single-layer graphene |
| CN102400109A (en) * | 2011-11-11 | 2012-04-04 | 南京航空航天大学 | Method for growing large area of layer-number-controllable graphene at low temperature through chemical vapor deposition (CVD) method by using polystyrene solid state carbon source |
| CN102794945A (en) * | 2011-05-27 | 2012-11-28 | 清华大学 | Method for preparing graphene carbon nano tube composite membrane structure |
| CN103466609A (en) * | 2013-09-25 | 2013-12-25 | 电子科技大学 | Preparation method of double-layer graphene films |
| CN104694939A (en) * | 2015-04-07 | 2015-06-10 | 河南红日铜箔科技有限公司 | Surface treatment technology for ultralow-surface-roughness copper foil |
| US20150292112A1 (en) * | 2014-04-15 | 2015-10-15 | Board Of Regents, The University Of Texas System | Methods of forming graphene single crystal domains |
-
2015
- 2015-11-13 CN CN201510778938.0A patent/CN105220214B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0878817A (en) * | 1994-08-31 | 1996-03-22 | Tsurumi Soda Co Ltd | Etching method |
| EP0709494A2 (en) * | 1994-10-06 | 1996-05-01 | Circuit Foil Japan Co., Ltd. | Method of surface-roughening treatment of copper foil |
| CN102134067A (en) * | 2011-04-18 | 2011-07-27 | 北京大学 | Method for preparing single-layer graphene |
| CN102794945A (en) * | 2011-05-27 | 2012-11-28 | 清华大学 | Method for preparing graphene carbon nano tube composite membrane structure |
| CN102400109A (en) * | 2011-11-11 | 2012-04-04 | 南京航空航天大学 | Method for growing large area of layer-number-controllable graphene at low temperature through chemical vapor deposition (CVD) method by using polystyrene solid state carbon source |
| CN103466609A (en) * | 2013-09-25 | 2013-12-25 | 电子科技大学 | Preparation method of double-layer graphene films |
| US20150292112A1 (en) * | 2014-04-15 | 2015-10-15 | Board Of Regents, The University Of Texas System | Methods of forming graphene single crystal domains |
| CN104694939A (en) * | 2015-04-07 | 2015-06-10 | 河南红日铜箔科技有限公司 | Surface treatment technology for ultralow-surface-roughness copper foil |
Non-Patent Citations (4)
| Title |
|---|
| KEUN SOO KIM等: "Large-scale pattern growth of graphene films for stretchable transparent electrodes", 《NATURE》 * |
| XUESONG LI等: "Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils", 《SCIENCE》 * |
| 杨连乔等: "铜基石墨烯的CVD法制备工艺参数研究", 《华中科技大学学报（自然科学版）》 * |
| 王浪等: "化学气相沉积法制备石墨烯的铜衬底预处理研究", 《物理学报》 * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107037933A (en) * | 2016-02-04 | 2017-08-11 | 中国科学院金属研究所 | A kind of preparation method of the grapheme capacitive touch screen of three layers of transparent electrode structure |
| CN105836735A (en) * | 2016-03-25 | 2016-08-10 | 西安电子科技大学 | Preparation method for ultra-three-dimension graphene |
| CN106698408A (en) * | 2016-12-30 | 2017-05-24 | 武汉理工大学 | Concave structure monocrystalline graphene and preparation method thereof |
| CN108539581A (en) * | 2018-05-23 | 2018-09-14 | 西北核技术研究所 | A kind of Metal Substrate graphene film cathode gas spark switch |
| CN108539581B (en) * | 2018-05-23 | 2020-06-26 | 西北核技术研究所 | Metal-based graphene film cathode gas spark switch |
| CN109440226A (en) * | 2018-06-29 | 2019-03-08 | 同济大学 | A kind of preparation method of high-strength light conductive graphene fiber |
| CN111741607A (en) * | 2020-06-19 | 2020-10-02 | 辽宁格莱菲尔健康科技有限公司 | Method for compositely integrating reduced graphene oxide high-sensitivity sensing circuit and latex |
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