CN105206705A - 一种低反射率晶体硅太阳能电池及其制备方法 - Google Patents
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Abstract
本发明公开了一种低反射率晶体硅太阳能电池的制备方法,包括如下步骤:a)对硅片依次进行去损伤层,扩散制p-n结和去磷硅玻璃;b)在硅片正面制备第一减反薄膜;c)在第一减反薄膜上进行激光打孔,形成纳米陷光结构;d)在第一减反薄膜表面和纳米孔内制备第二减反薄膜,第二减反薄膜覆盖在第一减反薄膜上形成复合减反薄膜;e)快速退火;f)在第二减反薄膜表面制备Ag正电极,在硅片背面制作Al背场和Ag背电极。与现有技术相比,本发明具有避免了对晶体硅的表面损伤,减少了硅表面的载流子复合速率、降低反射率和提高电池的转换效率的优点。本发明还公开了由上述制备方法制得一种低反射率晶体硅太阳能电池。
Description
技术领域
本发明涉及太阳能电池技术领域,尤其涉及一种低反射率晶体硅太阳能电池及其制备方法。
背景技术
晶硅太阳能电池的光电转换效率的损失有各种形式,包括:光学损失,电阻热损失和电子空穴复合损失等,其中,光学损失是阻碍太阳电池效率提高的重要障碍之一。对晶体硅而言,禁带宽度约为1.12eV,对应的本征吸收波长为1.1μm,即波长大于1.1μm的光子不能被利用而损失掉。此外,波长较长的近红外或红光,由于吸收系数小,一般直到靠近电池背表面处才能被吸牧,甚至需要通过背面反射回硅片体内才能被吸收,这样产生的电子空穴在硅片内部的运输路径长,复合几率提高。再者,硅片表面的反射率的大小也直接影响达到p-n的光子数量,反射率越低越有利于增加光生载流子的数量。
减小太阳电池表面的反射率主要有两种途径,一是利用减反射薄膜,二是利用陷光结构。减反射薄膜是利用光的相干性,在硅片表面镀上一层或多层薄膜,如氮化硅,氧化硅薄膜及其复合结构等。陷光结构是通过制作一些表面结构来降低表面反射率,如金字塔结构,纳米阵列结构等。目前,由于纳米绒面在降低反射率方面的效果十分显著,成为了制备高效太阳能电池的一个最重要的方法,出现了干法刻蚀和湿法刻蚀技术,但是这种技术有很多的弊端:干法刻蚀成本高,对硅片的损伤严重,碎片率高等;湿法刻蚀腐蚀液严重污染环境。因此,如何开发一种制备成本低,硅片损伤小、反射率低、转化效率高的晶硅太阳能电池成为研究者关注的重点。
发明内容
本发明所要解决的技术问题在于,提供一种硅片损伤小和低反射率的晶体硅太阳能电池及其制备方法。
为了解决上述技术问题,本发明提供了一种低反射率晶体硅太阳能电池的制备方法,包括如下步骤:a)对硅片依次进行去损伤层,扩散制p-n结和去磷硅玻璃;b)在硅片正面制备第一减反薄膜;c)在第一减反薄膜上进行激光打孔,形成纳米陷光结构;d)在第一减反薄膜表面和纳米孔内制备第二减反薄膜,第二减反薄膜覆盖在第一减反薄膜上形成复合减反薄膜;e)快速退火;f)在第二减反薄膜表面制备Ag正电极,在硅片背面制作Al背场和Ag背电极。
作为上述方案的改进,所述纳米陷光结构由均匀分布的纳米孔组成。
作为上述方案的改进,所述纳米孔正好穿透所述第一减反薄膜。
作为上述方案的改进,步骤a)中去损伤层是通过酸或者碱在硅片表面腐蚀掉一层1-5μm的硅损伤层。
作为上述方案的改进,所述第一减反薄膜为氮化硅薄膜,厚度为60-75nm,折射率为2.05-2.10。
作为上述方案的改进,所述纳米孔的直径为50-500nm,纳米孔占硅片正面面积的5-25%。
作为上述方案的改进,所述第二减反薄膜为氮化硅薄膜,厚度为10-25nm,折射率为2.0-2.05。
作为上述方案的改进,所述第二减反薄膜为氧化硅薄膜,厚度为10-25nm,折射率为1.4-1.7。
作为上述方案的改进,所述复合减反薄膜的反射率为0.5-2.0%。
作为上述方案的改进,所述步骤g)是采用快速退火炉进行退火,退火温度600-800℃,退火时间50-100s。
相应地,本发明还提供一种低反射率晶体硅太阳能电池,其由上述的制备方法制得。
与现有技术相比,本发明具有如下有益效果:本发明将纳米陷光结构设置在第一减反膜上,避免了对晶体硅的表面损伤,减少了硅表面的载流子复合速率;同时,快速退火消除了激光刻蚀导致的氮化硅机械损伤,复合减反膜填补了激光刻蚀部位氮化硅的缺失,这样在降低反射率的同时保证了减反膜的钝化效果,可以大大提高电池的转换效率。
附图说明
图1是本发明的一种低反射率晶体硅太阳能电池制备流程图。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚,下面将结合附图对本发明作进一步地详细描述。
如图1所示,一种低反射率晶体硅太阳能电池的制备方法,包括如下步骤:
步骤1:对硅片依次进行去损伤层,扩散制p-n结和去磷硅玻璃,去损伤层是通过酸或者碱在硅片表面腐蚀掉一层1-5μm的硅损伤层。
步骤2:在硅片正面制备第一减反薄膜。
步骤3:在第一减反薄膜上进行激光打孔,形成纳米陷光结构;第一减反薄膜为氮化硅薄膜,厚度为60-75nm,折射率为2.05-2.10;纳米陷光结构由均匀分布的纳米孔组成,纳米孔正好穿透所述第一减反薄膜;纳米孔的直径为50-500nm,纳米孔占硅片正面面积的5-25%。
步骤4:在第一减反薄膜表面和纳米孔内制备第二减反薄膜,第二减反薄膜覆盖在第一减反薄膜上形成复合减反薄膜;第二减反薄膜为氮化硅薄膜,厚度为10-25nm,折射率为2.0-2.05;或者第二减反薄膜为氧化硅薄膜,厚度为10-25nm,折射率为1.4-1.7。复合减反薄膜的反射率为0.5-2.0%。
步骤5:快速退火;采用快速退火炉进行退火,退火温度600-800℃,退火时间50-100s。
步骤6:在第二减反薄膜表面制备Ag正电极,在硅片背面制作Al背场和Ag背电极。
相应地,本发明还提供一种选择性制绒晶硅太阳能电池,其由上述的制备方法制得。
与现有技术相比,本发明具有如下有益效果:本发明将纳米陷光结构设置在减反膜上,避免了对晶体硅的表面损伤,减少了硅表面的载流子复合速率;同时,快速退火消除了激光刻蚀导致的氮化硅机械损伤,复合减反膜填补了激光刻蚀部位氮化硅的缺失,这样在降低反射率的同时保证了减反膜的钝化效果,可以大大提高电池的转换效率。
以上所述是本发明的优选实施方式,应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也视为本发明的保护范围。
Claims (10)
1.一种低反射率晶体硅太阳能电池的制备方法,其特征在于,包括如下步骤:
a)对硅片依次进行去损伤层,扩散制p-n结和去磷硅玻璃;
b)在硅片正面制备第一减反薄膜;
c)在第一减反薄膜上进行激光打孔,形成纳米陷光结构;
d)在第一减反薄膜表面和纳米孔内制备第二减反薄膜,第二减反薄膜覆盖在第一减反薄膜上形成复合减反薄膜;
e)快速退火;
f)在第二减反薄膜表面制备Ag正电极,在硅片背面制作Al背场和Ag背电极。
2.如权利要求1所述的一种低反射率晶体硅太阳能电池的制备方法,其特征在于,所述纳米陷光结构由均匀分布的纳米孔组成,纳米孔正好穿透所述第一减反薄膜。
3.如权利要求1所述的一种低反射率晶体硅太阳能电池的制备方法,其特征在于,步骤a)中去损伤层是通过酸或者碱在硅片表面腐蚀掉一层1-5μm的硅损伤层。
4.如权利要求1所述的一种低反射率晶体硅太阳能电池的制备方法,其特征在于,所述第一减反薄膜为氮化硅薄膜,厚度为60-75nm,折射率为2.05-2.10。
5.如权利要求2所述的一种低反射率晶体硅太阳能电池的制备方法,其特征在于,所述纳米孔的直径为50-500nm,纳米孔占硅片正面面积的5-25%。
6.如权利要求1所述的一种低反射率晶体硅太阳能电池的制备方法,其特征在于,所述第二减反薄膜为氮化硅薄膜,厚度为10-25nm,折射率为2.0-2.05。
7.如权利要求1所述的一种低反射率晶体硅太阳能电池的制备方法,其特征在于,所述第二减反薄膜为氧化硅薄膜,厚度为10-25nm,折射率为1.4-1.7。
8.如权利要求1所述的一种低反射率晶体硅太阳能电池的制备方法,其特征在于,所述复合减反薄膜的反射率为0.5-2.0%。
9.如权利要求1所述的一种低反射率晶体硅太阳能电池的制备方法,其特征在于,步骤g)是采用快速退火炉进行退火,退火温度600-800℃,退火时间50-100s。
10.一种低反射率晶体硅太阳能电池,其特征在于,其由权利要求1-9任一项所述的制备方法制得。
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