CN105206701B - 一种直接沉积于读出电路上的光电探测器及其制备方法 - Google Patents
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Abstract
本发明涉及光电探测器,具体是一种直接沉积于读出电路上的光电探测器及其制备方法。本发明解决了现有光电信号转换器件分辨率受限、制作成本高的问题。一种直接沉积于读出电路上的光电探测器,包括两组电极接触导体;第一组电极接触导体一一对应沉积于读出电路的各个像素单元的上表面;第二组电极接触导体一一对应沉积于读出电路的各个平面金属界面环的上表面;第一组电极接触导体的上表面沉积有底部载流子传输增强膜层;底部载流子传输增强膜层的上表面沉积有活性胶体量子点膜层;活性胶体量子点膜层的上表面沉积有顶部载流子传输增强膜层。本发明适用于光电探测领域。
Description
技术领域
本发明涉及光电探测器,具体是一种直接沉积于读出电路上的光电探测器及其制备方法。
背景技术
光电探测器通常被用来与读出电路进行集成,由此制作各种光电信号转换器件(例如光谱仪、焦平面阵列、发光二极管阵列,空间光调制器等)。在现有技术条件下,光电探测器由于自身结构所限,需要采用倒装芯片键合技术或引线键合互连技术来与读出电路进行集成,然而由于倒装芯片键合技术或引线键合互连技术的精度限制,导致光电探测器的探测区域尺寸难以缩小到高端读出电路的像素级水平,由此导致光电信号转换器件的分辨率受限。此外,由于倒装芯片键合技术或引线键合互连技术的工艺难度大、工艺成本高,导致光电信号转换器件的制作成本高。基于此,有必要发明一种全新的光电探测器,以解决现有光电信号转换器件分辨率受限、制作成本高的问题。
发明内容
本发明为了解决现有光电信号转换器件分辨率受限、制作成本高的问题,提供了一种直接沉积于读出电路上的光电探测器及其制备方法。
本发明是采用如下技术方案实现的:一种直接沉积于读出电路上的光电探测器,包括两组电极接触导体;
第一组电极接触导体一一对应沉积于读出电路的各个像素单元的上表面;
第二组电极接触导体一一对应沉积于读出电路的各个平面金属界面环的上表面;
第一组电极接触导体的上表面沉积有底部载流子传输增强膜层;
底部载流子传输增强膜层的上表面沉积有活性胶体量子点膜层;
活性胶体量子点膜层的上表面沉积有顶部载流子传输增强膜层;
顶部载流子传输增强膜层的上表面和第二组电极接触导体的上表面共同覆盖有公共上电极层。
工作时,由不同胶体量子点材料组成的活性胶体量子点膜层的不同区域将相应的入射光(可以是紫外线、可见光、近红外线、短波红外线、中红外线、远红外线等)的光子转化为电流,由此实现光电探测。
与现有光电探测器相比,本发明所述的一种直接沉积于读出电路上的光电探测器通过利用胶体量子点技术,实现了与读出电路进行直接集成,而无需采用倒装芯片键合技术或引线键合互连技术来与读出电路进行集成,由此一方面摆脱了倒装芯片键合技术或引线键合互连技术的精度限制,实现了将光电探测器的探测区域尺寸缩小到高端读出电路的像素级水平,从而大幅提高了光电信号转换器件的分辨率,另一方面大幅降低了光电信号转换器件的制作成本。
一种直接沉积于读出电路上的光电探测器的制备方法(该方法用于制备本发明所述的一种直接沉积于读出电路上的光电探测器),该方法是采用如下步骤实现的:
a.选取读出电路,该读出电路具有若干个像素单元和若干个平面金属界面环;
b.在读出电路的各个像素单元的上表面一一对应沉积第一组电极接触导体;在读出电路的各个平面金属界面环的上表面一一对应沉积第二组电极接触导体;
c.在第一组电极接触导体的上表面沉积底部载流子传输增强膜层;
d.在底部载流子传输增强膜层的上表面沉积活性胶体量子点膜层;
e.在活性胶体量子点膜层的上表面沉积顶部载流子传输增强膜层;
f.在顶部载流子传输增强膜层的上表面和第二组电极接触导体的上表面共同覆盖公共上电极层。
本发明有效解决了现有光电信号转换器件分辨率受限、制作成本高的问题,适用于光电探测领域。
附图说明
图1是本发明的一种直接沉积于读出电路上的光电探测器的制备方法的步骤a的示意图。
图2是本发明的一种直接沉积于读出电路上的光电探测器的制备方法的步骤b的示意图。
图3是本发明的一种直接沉积于读出电路上的光电探测器的制备方法的步骤c的示意图。
图4是本发明的一种直接沉积于读出电路上的光电探测器的制备方法的步骤d的示意图。
图5是本发明的一种直接沉积于读出电路上的光电探测器的制备方法的步骤e的示意图。
图6是本发明的一种直接沉积于读出电路上的光电探测器的制备方法的步骤f的示意图。
图中:1-读出电路的像素单元,2-读出电路的平面金属界面环,3-电极接触导体,4-底部载流子传输增强膜层,5-活性胶体量子点膜层,6-顶部载流子传输增强膜层,7-公共上电极层。
具体实施方式
一种直接沉积于读出电路上的光电探测器,包括两组电极接触导体3;
第一组电极接触导体3一一对应沉积于读出电路的各个像素单元1的上表面;
第二组电极接触导体3一一对应沉积于读出电路的各个平面金属界面环2的上表面;
第一组电极接触导体3的上表面沉积有底部载流子传输增强膜层4;
底部载流子传输增强膜层4的上表面沉积有活性胶体量子点膜层5;
活性胶体量子点膜层5的上表面沉积有顶部载流子传输增强膜层6;
顶部载流子传输增强膜层6的上表面和第二组电极接触导体3的上表面共同覆盖有公共上电极层7。
底部载流子传输增强膜层4、顶部载流子传输增强膜层6均采用富勒烯制成。
活性胶体量子点膜层5采用硫化铅或碲化铅或碲化汞制成。
活性胶体量子点膜层5可采用同一材料制成,或者可分为若干组,不同组活性胶体量子点膜层5各自采用不同材料制成。
一种直接沉积于读出电路上的光电探测器的制备方法(该方法用于制备本发明所述的一种直接沉积于读出电路上的光电探测器),该方法是采用如下步骤实现的:
a.选取读出电路,该读出电路具有若干个像素单元1和若干个平面金属界面环2;
b.在读出电路的各个像素单元1的上表面一一对应沉积第一组电极接触导体3;在读出电路的各个平面金属界面环2的上表面一一对应沉积第二组电极接触导体3;
c.在第一组电极接触导体3的上表面沉积底部载流子传输增强膜层4;
d.在底部载流子传输增强膜层4的上表面沉积活性胶体量子点膜层5;
e.在活性胶体量子点膜层5的上表面沉积顶部载流子传输增强膜层6;
f.在顶部载流子传输增强膜层6的上表面和第二组电极接触导体3的上表面共同覆盖公共上电极层7。
所述步骤c、e中,底部载流子传输增强膜层4、顶部载流子传输增强膜层6均采用富勒烯制成。
所述步骤d中,活性胶体量子点膜层5采用硫化铅或碲化铅或碲化汞制成。
所述步骤d中,活性胶体量子点膜层5可采用同一材料制成,或者可分为若干组,不同组活性胶体量子点膜层5各自采用不同材料制成。
具体实施时,所述步骤d中,活性胶体量子点膜层5是采用如下步骤制备的:
d1.将被弱亲和配体(例如油酸)钝化的胶体量子点暴露于新的配体环境中,新的配体环境对胶体量子点表面提供更强的结合亲和力,使得交换过程在保持胶体稳定性的同时发生;
d2.采用溶液配位体交换工艺,使得所有胶体量子点在液态和沉积后都具有光电特性。
所述步骤d中,通过不同的掩膜图形可以将不同胶体量子点材料(例如:硫化铅、碲化铅、碲化汞等)沉积制成不同组活性胶体量子点膜层5,使得活性胶体量子点膜层不仅能够实现单波段光电探测,也能够在同一个读出电路上实现扩展波长或多波段光电探测,使得光电探测可以同时覆盖紫外线、可见光、近红外线、短波红外线、中红外线、远红外线等。
Claims (8)
1.一种直接沉积于读出电路上的光电探测器,其特征在于:包括两组电极接触导体;
第一组电极接触导体一一对应沉积于读出电路的各个像素单元的上表面;
第二组电极接触导体一一对应沉积于读出电路的各个平面金属界面环的上表面;
第一组电极接触导体的上表面沉积有底部载流子传输增强膜层;
底部载流子传输增强膜层的上表面沉积有活性胶体量子点膜层;
活性胶体量子点膜层的上表面沉积有顶部载流子传输增强膜层;
顶部载流子传输增强膜层的上表面和第二组电极接触导体的上表面共同覆盖有公共上电极层。
2.根据权利要求1所述的一种直接沉积于读出电路上的光电探测器,其特征在于:底部载流子传输增强膜层、顶部载流子传输增强膜层均采用富勒烯制成。
3.根据权利要求1所述的一种直接沉积于读出电路上的光电探测器,其特征在于:活性胶体量子点膜层采用硫化铅或碲化铅或碲化汞制成。
4.根据权利要求1所述的一种直接沉积于读出电路上的光电探测器,其特征在于:活性胶体量子点膜层采用同一材料制成或者分为若干组,不同组活性胶体量子点膜层各自采用不同材料制成。
5.一种直接沉积于读出电路上的光电探测器的制备方法,该方法用于制备如权利要求1所述的一种直接沉积于读出电路上的光电探测器,其特征在于:该方法是采用如下步骤实现的:
a.选取读出电路,该读出电路具有若干个像素单元和若干个平面金属界面环;
b.在读出电路的各个像素单元的上表面一一对应沉积第一组电极接触导体;在读出电路的各个平面金属界面环的上表面一一对应沉积第二组电极接触导体;
c.在第一组电极接触导体的上表面沉积底部载流子传输增强膜层;
d.在底部载流子传输增强膜层的上表面沉积活性胶体量子点膜层;
e.在活性胶体量子点膜层的上表面沉积顶部载流子传输增强膜层;
f.在顶部载流子传输增强膜层的上表面和第二组电极接触导体的上表面共同覆盖公共上电极层。
6.根据权利要求5所述的一种直接沉积于读出电路上的光电探测器的制备方法,其特征在于:所述步骤c、e中,底部载流子传输增强膜层、顶部载流子传输增强膜层均采用富勒烯制成。
7.根据权利要求5所述的一种直接沉积于读出电路上的光电探测器的制备方法,其特征在于:所述步骤d中,活性胶体量子点膜层采用硫化铅或碲化铅或碲化汞制成。
8.根据权利要求5所述的一种直接沉积于读出电路上的光电探测器的制备方法,其特征在于:所述步骤d中,活性胶体量子点膜层采用同一材料制成或者分为若干组,不同组活性胶体量子点膜层各自采用不同材料制成。
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