CN105206682A - Vertical current regulative diode and manufacturing method thereof - Google Patents
Vertical current regulative diode and manufacturing method thereof Download PDFInfo
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- CN105206682A CN105206682A CN201510571690.0A CN201510571690A CN105206682A CN 105206682 A CN105206682 A CN 105206682A CN 201510571690 A CN201510571690 A CN 201510571690A CN 105206682 A CN105206682 A CN 105206682A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 32
- 238000005516 engineering process Methods 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000009792 diffusion process Methods 0.000 claims description 86
- 238000000407 epitaxy Methods 0.000 claims description 19
- 230000001413 cellular effect Effects 0.000 claims description 14
- 238000005468 ion implantation Methods 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000003381 stabilizer Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
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Abstract
The invention relates to semiconductor technologies, in particular to a vertical current regulative diode and a manufacturing method thereof. The vertical current regulative diode comprises an oxide layer, a highly-doped N-type epitaxial layer, a lightly-doped N-type epitaxial layer, a heavily-doped N+ substrate and a metal anode which are sequentially arranged in a stacked mode. The vertical current regulative diode is characterized in that a resistor is additionally arranged to serve as a negative feedback structure. The vertical current regulative diode has the advantages that because the introduced resistor has a certain voltage drop when a device works, a channel can be pinched off more easily, the vertical current regulative diode can enter a constant current area rapidly, the breakdown voltage of the lateral current regulative diode is effectively increased, the lateral current regulative diode has a low pinch-off voltage, the constant current of the lateral current regulative diode is effectively increased, and the effective operating voltage range of the lateral current regulative diode is effectively widened. The method is especially suitable for the lateral current regulative diode.
Description
Technical field
The invention belongs to semiconductor power device technology field, relate to a kind of vertical current regulative diode and manufacture method thereof specifically.
Background technology
Constant-current source is a kind of conventional electronic equipment and device, uses quite extensive in electronic circuit.Constant-current source protects whole circuit, even if there is the situation that spread of voltage or load resistance alter a great deal, can guarantee that supply current is stablized.To come out in market in recent years a kind of current regulator diode CRD (CurrentRegulatorDiodes), namely replace multiple element such as transistor, voltage-stabiliser tube, resistance of common constant-current source as constant-current source with diode, current regulator diode output current is large, accomplish the constant current from several milliamperes to tens milliamperes, can Direct driver load, simplify circuit structure, reduce volume, improve the reliability of device.The peripheral circuit of current regulator diode is very simple in addition, and easy to use, be widely used in automatic control, the field such as instrument, protective circuit constant-current source is a kind of conventional electronic equipment and device, uses quite extensive in electronic circuit.Constant-current source protects whole circuit, even if there is the situation that spread of voltage or load resistance alter a great deal, can guarantee that supply current is stablized.To come out in market in recent years a kind of current regulator diode CRD (CurrentRegulatorDiodes), namely replace multiple element such as transistor, voltage-stabiliser tube, resistance of common constant-current source as constant-current source with diode, current regulator diode output current is large, accomplish the constant current from several milliamperes to tens milliamperes, can Direct driver load, simplify circuit structure, reduce volume, improve the reliability of device.The peripheral circuit of current regulator diode is very simple in addition, easy to use, is widely used in automatic control, the field such as instrument, protective circuit.
Publication number is that the Chinese patent of CN103426936A openly knows clearly " a kind of vertical current regulative diode and manufacture method thereof ", as shown in Figure 1, its main technical schemes is a kind of vertical current regulative diode, comprise the oxide layer 7 be cascading, highly doped epitaxial loayer 6, lightly doped n-type epitaxial loayer 2, heavy doping N+ substrate 1 and metal anode 8, it is characterized in that, also include the structure cell connected successively, terminal structure and cut-off ring, by multiple structure, the identical and cellular connected successively forms described structure cell, described cellular comprises the first metallic cathode 3, one N+ heavily doped region 4 and a P+ heavy doping diffusion region 5, a described P+ heavy doping diffusion region 5 is two and lays respectively at the two ends of cellular, a described P+ heavy doping diffusion region 5 is run through highly doped epitaxial loayer 6 and extends in lightly doped n-type epitaxial loayer 2, a described N+ heavily doped region 4 is arranged on the upper surface also embedding the highly doped epitaxial loayer 6 between two P+ heavy doping diffusion regions 5 between two P+ heavy doping diffusion regions 5, described first metallic cathode 3 covers the upper surface of a N+ heavily doped region 4 and a P+ heavy doping diffusion region 5 and runs through oxide layer 7 completely, shape is groove shape simultaneously, the groove at two ends extends in a P+ heavy doping diffusion region 5, in groove, partial electrode is surrounded by P+ heavy doping diffusion region 5, by multiple structure, the identical and terminal connected successively forms described terminal structure, described terminal comprises the second metallic cathode 31 and the 2nd P+ heavy doping diffusion region 51, described 2nd P+ heavy doping diffusion region 51 is positioned at the one end near structure cell, run through highly doped epitaxial loayer 6 and extend in lightly doped n-type epitaxial loayer 2, at regular intervals between 2nd P+ heavy doping diffusion region 51 of two terminal structures, described second metallic cathode 31 is groove shape, trench portions through part oxide layer 7 also extends in the 2nd P+ heavy doping diffusion region 51, in groove, partial electrode is surrounded by P+ heavy doping diffusion region 51, second metallic cathode 31 and the 2nd P+ heavy doping diffusion region 51 form field limiting ring, described cut-off ring comprises the 2nd N+ heavily doped region 41 embedding lightly doped n-type epitaxial loayer 2 end upper surface and is formed, 2nd N+ heavily doped region 41 upper surface capping oxidation layer 7, described structure cell, at regular intervals between terminal structure and cut-off ring.Although this patent have employed a lot of structure improve device performance, electric current raises with voltage and increases comparatively obvious, and namely saturation is not high, and in addition, the device electric current required voltage that reaches capacity is very large.The modified node method that this patent proposes can reduction saturation voltage drop clearly, and improve current saturation degree, the withstand voltage of device significantly improves in addition simultaneously
Summary of the invention
To be solved by this invention, be exactly for the problems referred to above, propose a kind of can reduction saturation voltage drop clearly, improve current saturation degree simultaneously, improve withstand voltage vertical current regulative diode and the manufacture method thereof of device.
For achieving the above object, the present invention adopts following technical scheme:
A kind of vertical current regulative diode, comprises the oxide layer 7, highly doped epitaxial loayer 6, lightly doped n-type epitaxial loayer 2, heavy doping N+ substrate 1 and the metal anode 8 that are cascading from top to bottom; Described diode has structure cell, terminal structure and cut-off ring successively along device horizontal direction, and by multiple structure, the identical and cellular connected successively forms described structure cell; Described cellular comprises the first metallic cathode 3, second metallic cathode 18, a N+ heavily doped region 4 and a P+ heavy doping diffusion region 5; A described P+ heavy doping diffusion region 5 is positioned at the two ends of structure cell, and a P+ heavy doping diffusion region 5 is run through highly doped epitaxial loayer 6 and extended in lightly doped n-type epitaxial loayer 2; A described N+ heavily doped region 4 is connected with a P+ heavy doping diffusion region 5 and between the first P+ heavy doping diffusion region 5; Described first negative electrode runs through oxide layer 7 and is connected with a P+ heavy doping diffusion region 5 and extends in a P+ heavy doping diffusion region 5; Described second metallic cathode 18 runs through oxide layer 7 and is connected with the upper surface of a N+ heavily doped region 4; By multiple structure, the identical and terminal connected successively forms described terminal structure, described terminal comprises the 3rd metallic cathode 31 and the 2nd P+ heavy doping diffusion region 51, described 2nd P+ heavy doping diffusion region 51 is arranged in terminal one end near structure cell, and the 2nd P+ heavy doping diffusion region 51 is run through highly doped epitaxial loayer 6 and extended in lightly doped n-type epitaxial loayer 2; At regular intervals between the 2nd P+ heavy doping diffusion region 51 in adjacent end; Described 3rd metallic cathode 31 is groove shape, and trench portions through part oxide layer 7 also extends in the 2nd P+ heavy doping diffusion region 51, and the 3rd metallic cathode 31 and the 2nd P+ heavy doping diffusion region 51 form field limiting ring; Described cut-off ring is formed by the 2nd N+ heavily doped region 41 being positioned at highly doped epitaxial loayer 6 upper strata, and the lower surface the 2nd N+ heavily doped region 41 shown in oxide layer 7 connects; Described structure cell, at regular intervals between terminal structure and cut-off ring; It is characterized in that, also comprise trap electric resistance structure; Described trap electric resistance structure is connected with structure cell; Described trap electric resistance structure comprises P trap 14, the 3rd P+ heavily doped region 15 and the 4th P+ heavily doped region 16; Described P trap 14 is positioned at highly doped epitaxial loayer 6 upper strata, and its upper surface is connected with the lower surface of oxide layer 7; Described 3rd P+ heavily doped region 15 and the 4th P+ heavily doped region 16 are positioned at the upper strata of P trap 14 both sides, and described 4th P+ heavily doped region 16 is positioned at the side near structure cell; Described first metallic cathode 3 runs through oxide layer 7 and is connected with the upper surface of the 4th P+ heavily doped region 16; Described second metallic cathode 18 runs through oxide layer 7 and is connected with the upper surface of the 3rd P+ heavily doped region 15.
Further, described P trap 14 also comprises polycrystalline resistor 19; Described polycrystalline resistor 19 is between the 3rd P+ heavily doped region 15 and the 4th P+ heavily doped region 16, and its upper surface is connected with the second metallic cathode 18.
Further, the bottom of described P trap 14 extends in lightly doped n-type epitaxial loayer 2.
Further, the lower surface of described P trap 14 is connected with the upper surface of lightly doped n-type epitaxial loayer 2.
A manufacture method for vertical current regulative diode, is characterized in that, comprises the following steps:
The first step: adopt epitaxy technique, generates N-type epitaxy layer 2 on N+ substrate 1 upper strata;
Second step: adopt epitaxy technique, generates highly doped epitaxial loayer 6 on N-type epitaxy layer 2 upper strata;
3rd step: generate oxide layer 7 at highly doped epitaxial loayer 6 upper surface;
4th step: adopt etching technics, etch the groove of the first metallic cathode 3, second metallic cathode 18, the 3rd metallic cathode 31 and field limiting ring at assorted N-type epitaxy layer 6 upper surface;
5th step: adopt photoetching and ion implantation technology, the position of the groove etched in device structure cell and terminal structure in the 4th step forms P+ heavy doping diffusion region 5 and a 2nd P+ heavy doping diffusion region 51 respectively; The bottom of the one P+ heavy doping diffusion region 5 and the 2nd P+ heavy doping diffusion region 51 extends in lightly doped n-type epitaxial loayer 2;
6th step: adopt ion implantation technology, forms P trap 14 near the side of structure cell in the devices;
7th step: adopt photoetching and ion implantation technology, form the 3rd P+ heavily doped region 15 and the 4th P+ heavily doped region 16 in P trap 14 both sides respectively; Described 4th P+ heavily doped region 16 is positioned at the side near structure cell;
8th step: adopt ion implantation technology, the side in structure cell with near terminal structure in device forms a N+ heavily doped region 4 and the 2nd N+ heavily doped region 41 simultaneously; A described N+ heavily doped region 4 is between the first P+ heavy doping diffusion region 5; Described 2nd N+ heavily doped region 41 is the cut-off ring in device;
9th step: deposited metal also adopts etching technics, forms the first metallic cathode 3, second metallic cathode 18, the 3rd metallic cathode 31 and terminal field limiting ring field plate;
Tenth step: form metal anode 8 at N+ substrate 1 lower surface.
Beneficial effect of the present invention is, on traditional device architecture, by increasing a feedback resistance, make the pinch-off voltage of device lower, constant-current characteristics is better, and namely in the voltage change range of work, the change of its constant current value is less, and then effectively operating voltage range is wider, obtains higher safe operating voltage.
Accompanying drawing explanation
Fig. 1 is traditional vertical current regulative diode structural representation;
Fig. 2 is the structural representation of embodiment 1;
Fig. 3 is the structural representation of embodiment 2;
Fig. 4 is the structural representation of embodiment 3;
Fig. 5 is the structural representation of embodiment 4;
Fig. 6 is the structural representation of embodiment 5;
Fig. 7 is the structural representation of embodiment 6;
Fig. 8 is initial silicon chip schematic diagram in the technique of the manufacture method of embodiment;
Fig. 9 is the schematic diagram delayed outside twice in the technique of the manufacture method of embodiment;
Figure 10 is the schematic diagram in the technique of the manufacture method of embodiment after cutting;
Figure 11 is that in the technique of the manufacture method of embodiment, a P+ heavy doping diffusion region 5 and the 2nd P+ heavy doping diffusion region 51 are injected and schematic diagram after knot;
Figure 12 be in the technique of the manufacture method of embodiment P trap 14 inject and knot after schematic diagram;
Figure 13 be in the technique of the manufacture method of embodiment the 3rd P+ heavily doped region 15 and the 4th P+ heavily doped region 16 inject after schematic diagram;
Figure 14 be in the technique of the manufacture method of embodiment a N+ heavily doped region 4 and the 2nd N+ heavily doped region 41 inject after schematic diagram;
Figure 15 is the schematic diagram in the technique of the manufacture method of embodiment after depositing metal;
Figure 16 is that the current characteristics of current characteristics and the comparison structure implemented contrasts schematic diagram.
Embodiment
Below in conjunction with drawings and Examples, describe technical scheme of the present invention in detail:
The present invention, compared with traditional vertical current regulative diode structure, adds a feedback resistance, and make the pinch-off voltage of device lower, constant-current characteristics is better.
Embodiment 1
As shown in Figure 2, a kind of vertical current regulative diode of this example, comprises the oxide layer 7, highly doped epitaxial loayer 6, lightly doped n-type epitaxial loayer 2, heavy doping N+ substrate 1 and the metal anode 8 that are cascading from top to bottom; Described diode has structure cell, terminal structure and cut-off ring successively along device horizontal direction, and by multiple structure, the identical and cellular connected successively forms described structure cell; Described cellular comprises the first metallic cathode 3, second metallic cathode 18, a N+ heavily doped region 4 and a P+ heavy doping diffusion region 5; A described P+ heavy doping diffusion region 5 is positioned at the two ends of structure cell, and a P+ heavy doping diffusion region 5 is run through highly doped epitaxial loayer 6 and extended in lightly doped n-type epitaxial loayer 2; A described N+ heavily doped region 4 is connected with a P+ heavy doping diffusion region 5 and between the first P+ heavy doping diffusion region 5; Described first negative electrode runs through oxide layer 7 and is connected with a P+ heavy doping diffusion region 5 and extends in a P+ heavy doping diffusion region 5; Described second metallic cathode 18 runs through oxide layer 7 and is connected with the upper surface of a N+ heavily doped region 4; By multiple structure, the identical and terminal connected successively forms described terminal structure, described terminal comprises the 3rd metallic cathode 31 and the 2nd P+ heavy doping diffusion region 51, described 2nd P+ heavy doping diffusion region 51 is arranged in terminal one end near structure cell, and the 2nd P+ heavy doping diffusion region 51 is run through highly doped epitaxial loayer 6 and extended in lightly doped n-type epitaxial loayer 2; At regular intervals between the 2nd P+ heavy doping diffusion region 51 in adjacent end; Described 3rd metallic cathode 31 is groove shape, and trench portions through part oxide layer 7 also extends in the 2nd P+ heavy doping diffusion region 51, and the 3rd metallic cathode 31 and the 2nd P+ heavy doping diffusion region 51 form field limiting ring; Described cut-off ring is formed by the 2nd N+ heavily doped region 41 being positioned at highly doped epitaxial loayer 6 upper strata, and the lower surface the 2nd N+ heavily doped region 41 shown in oxide layer 7 connects; Described structure cell, at regular intervals between terminal structure and cut-off ring; Also comprise trap electric resistance structure; Described trap electric resistance structure is connected with structure cell; Described trap electric resistance structure comprises P trap 14, the 3rd P+ heavily doped region 15 and the 4th P+ heavily doped region 16; Described P trap 14 is positioned at highly doped epitaxial loayer 6 upper strata, and its upper surface is connected with the lower surface of oxide layer 7; Described 3rd P+ heavily doped region 15 and the 4th P+ heavily doped region 16 are positioned at the upper strata of P trap 14 both sides, and described 4th P+ heavily doped region 16 is positioned at the side near structure cell; Described first metallic cathode 3 runs through oxide layer 7 and is connected with the upper surface of the 4th P+ heavily doped region 16; Described second metallic cathode 18 runs through oxide layer 7 and is connected with the upper surface of the 3rd P+ heavily doped region 15.
Cellular 10 in this example
(1), 10
(2)... 10
(i)it is identical structure cell; Terminal 12
(1), 12
(2)... 12
(i)it is terminal structure; In this example, vertical current regulative diode have employed negative-feedback technology, introduce feedback resistance, when current value increases time, between first metallic cathode 3 and the first metallic cathode 18, voltage increases thereupon, thus make raceway groove narrower, electric current is reduced, can constant current value be reached more stable, the effect that pinch-off voltage is lower.
The operation principle of this example is:
Trap resistance comprises P trap 14, the 3rd P+ heavily doped region 15, the 4th P+ heavily doped region 16, first metallic cathode 3 and the first metallic cathode 18.Structure cell 10
(1), 10
(2)... 10
(i)be made up of heavy doping N+ type substrate 1, lightly doped n-type epitaxial loayer 2, the 3rd metallic cathode 3, a N+ heavily doped region 4, a P+ heavy doping type diffusion region 5, highly doped epitaxial loayer 6, metal anode 8; Terminal structure 12
(1), 12
(2)... 12
(i)be positioned at structure cell 10
(1), 10
(2)... 10
(i)outside, be made up of heavy doping N+ type substrate 1, lightly doped n-type epitaxial loayer 2, second metallic cathode 31, the 2nd P+ heavy doping diffusion region 51, highly doped epitaxial loayer 6, metal anode 8; The field plate length of terminal part can regulate its length according to requirement of withstand voltage.Device outermost top is the 2nd N+ heavily doped region 41, is cut-off ring, prevents potential lines from consuming device edge, and what the number of cellular and terminal and spacing all can require according to continuous current and pinch-off voltage does flexible.11 is last cellular distances apart from first terminal, and its length can regulate according to requirement of withstand voltage.
Lightly doped n-type epitaxial loayer 2 diffuses out multiple P+ heavy doping diffusion region 5 and the 2nd P+ heavy doping diffusion region 51, two depletion layers are formed according to PN junction principle between adjacent two P+ heavy doping diffusion regions, vertical-channel is formed between two depletion layers, superposed by the constant current of multiple vertical-channel parallel-connection structure, realize large constant current.
Described vertical current regulative diode, metal anode 8 connects high potential at the device back side, and the 3rd metallic cathode 3 is connected electronegative potential with the second metallic cathode 31 in top device.First metallic cathode 18 forms conductive path by trap resistance and the 3rd metallic cathode 3, therefore light dope epitaxial loayer 2 current potential is higher than the P+ heavy doping diffusion region be connected with metallic cathode, making the reverse-biased depletion layer expansion of the PN junction of formation, is vertical conduction channel between two depletion layers.Along with applied voltage becomes large, depletion layer thickness constantly thickeies, and depletion layer expansion makes conducting channel narrow.When raceway groove not yet pinch off time, channel resistance is semiconductor resistor, and electric current increases along with the increase of voltage, and now diode operation is in linear zone.When the depletion layer that applied voltage continues to increase to both sides contacts, be called raceway groove pinch off, anode voltage is now called pinch-off voltage.After raceway groove pinch off, continue to increase anode voltage, pinch-off point is slow with the increase change of anode voltage, and slow down so device current increases, form constant current function, now devices function is in constant current district.Groove shape made by 3rd metallic cathode 3 of the present invention and the second metallic cathode 31, makes P+ heavy doping diffusion region transverse and longitudinal diffusion ratio little, shortens the distance bottom two P+ heavy doping diffusion regions, thus the easier pinch off of current regulator diode.Meanwhile, due to the present invention's extension one deck highly doped epitaxial loayer 6 again on lightly doped n-type epitaxial loayer 2, after making raceway groove pinch off, it is more slow that pinch-off point increases change with voltage, can realize better constant current ability.And the first lightly doped n-type epitaxial loayer ensure that device has higher withstand voltage and lower pinch-off voltage.The employing of twice extension, while making current regulator diode can have higher withstand voltage and lower pinch-off voltage, realizes good current constant ability.The present invention takes negative-feedback technology, when electric current increases gradually time, time electric current increases gradually, the electric current flowing through trap resistance also increases gradually, the voltage between the first metallic cathode 18 and the 3rd metallic cathode 3 is made to increase gradually, so make the reversed bias voltage between PN junction increase, between the expansion of reverse-biased depletion layer rapider, make pinch-off voltage lower; What after raceway groove pinch off, make electric current rising become is more slow, thus constant current better effects if.
Embodiment 2
As shown in Figure 3, this example is on the basis of embodiment 1, situation when highly doped epitaxial loayer 6 is identical with the concentration of lightly doped n-type epitaxial loayer 2, and the advantage of this example is that concentration is identical and saves manufacturing cost.But owing to only having one deck compared with the epitaxial loayer of low doping concentration, the resistance of channel region is less, pinch-off point change is fast, and device is unstable at constant current district electric current.
Embodiment 3
As shown in Figure 4, this example is on the basis of embodiment 1, and the bottom of P trap 14 extends in lightly doped n-type epitaxial loayer 2, and this example is compared its trap of example 1 and more risen, and trap resistance is less, layout can carry out more accurate adjustment resistance value on domain.
Embodiment 4
As shown in Figure 5, this example is on the basis of embodiment 1, and the lower surface of P trap 14 is connected with the upper surface of lightly doped n-type epitaxial loayer 2, and the advantage trap of this example is more shallow, and trap resistance is larger, and the area of resistance on domain is reduced, cost-saving.
Embodiment 5
As shown in Figure 6, this example is compared with embodiment 1, and for P trap resistance 14 is replaced with polycrystalline resistor 20,20 are arranged in oxide layer.The advantage of this structure is, wherein the temperature characterisitic of polycrystalline resistor is better, and the temperature characterisitic of whole device can be made better.
Embodiment 6
As shown in Figure 7, this example is compared with embodiment 1, and in P trap 14, add 19,19 between 15 and 16.It is larger that this structure defines the resistance value that JFET structure obtains, and the area of resistance on domain is reduced, cost-saving.
Present invention also offers a kind of method manufacturing vertical current regulative diode, as shown in Fig. 8-Figure 16:
The manufacture method of a kind of vertical current regulative diode of the present invention, comprises the following steps:
The first step: adopt epitaxy technique, generates N-type epitaxy layer 2 on N+ substrate 1 upper strata;
Second step: adopt epitaxy technique, generates highly doped epitaxial loayer 6 on N-type epitaxy layer 2 upper strata;
3rd step: generate oxide layer 7 at highly doped epitaxial loayer 6 upper surface;
4th step: adopt etching technics, etch the groove of the first metallic cathode 3, second metallic cathode 18, the 3rd metallic cathode 31 and field limiting ring at assorted N-type epitaxy layer 6 upper surface;
5th step: adopt photoetching and ion implantation technology, the position of the groove etched in device structure cell and terminal structure in the 4th step forms P+ heavy doping diffusion region 5 and a 2nd P+ heavy doping diffusion region 51 respectively; The bottom of the one P+ heavy doping diffusion region 5 and the 2nd P+ heavy doping diffusion region 51 extends in lightly doped n-type epitaxial loayer 2;
6th step: adopt ion implantation technology, forms P trap 14 near the side of structure cell in the devices;
7th step: adopt photoetching and ion implantation technology, form the 3rd P+ heavily doped region 15 and the 4th P+ heavily doped region 16 in P trap 14 both sides respectively; Described 4th P+ heavily doped region 16 is positioned at the side near structure cell;
8th step: adopt ion implantation technology, the side in structure cell with near terminal structure in device forms a N+ heavily doped region 4 and the 2nd N+ heavily doped region 41 simultaneously; A described N+ heavily doped region 4 is between the first P+ heavy doping diffusion region 5; Described 2nd N+ heavily doped region 41 is the cut-off ring in device;
9th step: deposited metal also adopts etching technics, forms the first metallic cathode 3, second metallic cathode 18, the 3rd metallic cathode 31 and terminal field limiting ring field plate;
Tenth step: form metal anode 8 at N+ substrate 1 lower surface.
Vertical current regulative diode of the present invention adopts twice epitaxy technology, is on lightly doped n-type epitaxial loayer 2 respectively and highly doped epitaxial loayer 6.First lightly doped N-type epitaxy layer 2 makes the easier pinch off of current regulator diode and can bear higher withstand voltage, the N-type epitaxy layer 6 of high-dopant concentration is between adjacent two P+ heavy doping diffusion regions 5, increase the doping content of channel region, make pinch-off point increase change more slowly with voltage, constant current is more stable.
Groove shape made by 3rd metallic cathode 3 of vertical current regulative diode and the second metallic cathode 31, trench region extends in a P+ heavy doping diffusion region 5 and the 2nd P+ heavy doping diffusion region 51, in groove, partial electrode is surrounded by P+ doped diffusion region, the P+ heavy doping diffusion region transverse and longitudinal diffusion ratio made is little, reduce the spacing bottom two P+ heavy doping diffusion regions, thus make the easier pinch off of current regulator diode.
Described vertical current regulative diode adopts finishes terminal technology, and terminal comprises the identical field limiting ring of junction depth, field limiting ring can have field plate cover, and by knot terminal technology, make epitaxial loayer be depleted to last field limiting ring, the transverse direction that effectively can improve this device is withstand voltage.
The field limiting ring width of described vertical current regulative diode terminal structure may be the same or different, and regulates according to concrete requirement of withstand voltage.
The requirement of withstand voltage of having no way of that has of the Metal field plate of described vertical current regulative diode terminal structure determines, its length also can regulate according to concrete requirement of withstand voltage.
The concentration of the highly doped N-type epitaxy layer 6 of described vertical current regulative diode and the degree of depth, cellular 10
(1), 10
(2)...10
(i), terminal 12
(1), 12
(2)... 12
(i)number i and last cellular according to the requirement adjustment of concrete withstand voltage and pinch-off voltage, the flexibility of device layout can be considerably increased apart from the distance 11 of first terminal, last terminal to the distance 13 of last ring.
Claims (5)
1. a vertical current regulative diode, comprises the oxide layer (7), highly doped epitaxial loayer (6), lightly doped n-type epitaxial loayer (2), heavy doping N+ substrate (1) and the metal anode (8) that are cascading from top to bottom; Described diode has structure cell, terminal structure and cut-off ring successively along device horizontal direction, and by multiple structure, the identical and cellular connected successively forms described structure cell; Described cellular comprises the first metallic cathode (3), the second metallic cathode (18), a N+ heavily doped region (4) and a P+ heavy doping diffusion region (5); A described P+ heavy doping diffusion region (5) is positioned at the two ends of structure cell, and a P+ heavy doping diffusion region (5) is run through highly doped epitaxial loayer (6) and extended in lightly doped n-type epitaxial loayer (2); A described N+ heavily doped region (4) is connected with a P+ heavy doping diffusion region (5) and is positioned between a P+ heavy doping diffusion region (5); Described first negative electrode runs through oxide layer (7) and is connected with a P+ heavy doping diffusion region (5) and extends in a P+ heavy doping diffusion region (5); Described second metallic cathode (18) is run through oxide layer (7) and is connected with the upper surface of a N+ heavily doped region (4); By multiple structure, the identical and terminal connected successively forms described terminal structure, described terminal comprises the 3rd metallic cathode (31) and the 2nd P+ heavy doping diffusion region (51), described 2nd P+ heavy doping diffusion region (51) is arranged in terminal one end near structure cell, and the 2nd P+ heavy doping diffusion region (51) is run through highly doped epitaxial loayer (6) and extended in lightly doped n-type epitaxial loayer (2); At regular intervals between the 2nd P+ heavy doping diffusion region (51) in adjacent end; Described 3rd metallic cathode (31) is groove shape, trench portions through part oxide layer (7) also extends in the 2nd P+ heavy doping diffusion region (51), and the 3rd metallic cathode (31) and the 2nd P+ heavy doping diffusion region (51) form field limiting ring; Described cut-off ring is formed by the 2nd N+ heavily doped region (41) being positioned at highly doped epitaxial loayer (6) upper strata, and the lower surface the 2nd N+ heavily doped region (41) shown in oxide layer (7) connects; Described structure cell, at regular intervals between terminal structure and cut-off ring; It is characterized in that, also comprise trap electric resistance structure; Described trap electric resistance structure is connected with structure cell; Described trap electric resistance structure comprises P trap (14), the 3rd P+ heavily doped region (15) and the 4th P+ heavily doped region (16); Described P trap (14) is positioned at highly doped epitaxial loayer (6) upper strata, and its upper surface is connected with the lower surface of oxide layer (7); Described 3rd P+ heavily doped region (15) and the 4th P+ heavily doped region (16) are positioned at the upper strata of P trap (14) both sides, and described 4th P+ heavily doped region (16) is positioned at the side near structure cell; Described first metallic cathode (3) is run through oxide layer (7) and is connected with the upper surface of the 4th P+ heavily doped region (16); Described second metallic cathode (18) is run through oxide layer (7) and is connected with the upper surface of the 3rd P+ heavily doped region (15).
2. a kind of vertical current regulative diode according to claim 1, is characterized in that, described P trap (14) also comprises polycrystalline resistor (19); Described polycrystalline resistor (19) is positioned between the 3rd P+ heavily doped region (15) and the 4th P+ heavily doped region (16), and its upper surface is connected with the second metallic cathode (18).
3. a kind of vertical current regulative diode according to claim 1 and 2, is characterized in that, the bottom of described P trap (14) extends in lightly doped n-type epitaxial loayer (2).
4. a kind of vertical current regulative diode according to claim 1 and 2, is characterized in that, the lower surface of described P trap (14) is connected with the upper surface of lightly doped n-type epitaxial loayer (2).
5. a manufacture method for vertical current regulative diode, is characterized in that, comprises the following steps:
The first step: adopt epitaxy technique, generates N-type epitaxy layer (2) on N+ substrate (1) upper strata;
Second step: adopt epitaxy technique, generates highly doped epitaxial loayer (6) on N-type epitaxy layer (2) upper strata;
3rd step: generate oxide layer (7) at highly doped epitaxial loayer (6) upper surface;
4th step: adopt etching technics, etch the groove of the first metallic cathode (3), the second metallic cathode (18), the 3rd metallic cathode (31) and field limiting ring at assorted N-type epitaxy layer (6) upper surface;
5th step: adopt photoetching and ion implantation technology, the position of the groove etched in device structure cell and terminal structure in the 4th step forms a P+ heavy doping diffusion region (5) and the 2nd P+ heavy doping diffusion region (51) respectively; The bottom of the one P+ heavy doping diffusion region (5) and the 2nd P+ heavy doping diffusion region (51) extends in lightly doped n-type epitaxial loayer (2);
6th step: adopt ion implantation technology, forms P trap (14) near the side of structure cell in the devices;
7th step: adopt photoetching and ion implantation technology, form the 3rd P+ heavily doped region (15) and the 4th P+ heavily doped region (16) in P trap (14) both sides respectively; Described 4th P+ heavily doped region (16) is positioned at the side near structure cell;
8th step: adopt ion implantation technology, the side in structure cell with near terminal structure in device forms a N+ heavily doped region (4) and the 2nd N+ heavily doped region (41) simultaneously; A described N+ heavily doped region (4) is positioned between a P+ heavy doping diffusion region (5); Described 2nd N+ heavily doped region (41) is the cut-off ring in device;
9th step: deposited metal also adopts etching technics, forms the first metallic cathode (3), the second metallic cathode (18), the 3rd metallic cathode (31) and terminal field limiting ring field plate;
Tenth step: form metal anode (8) at N+ substrate (1) lower surface.
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| CN201510571690.0A CN105206682A (en) | 2015-09-09 | 2015-09-09 | Vertical current regulative diode and manufacturing method thereof |
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| CN201510571690.0A CN105206682A (en) | 2015-09-09 | 2015-09-09 | Vertical current regulative diode and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110534513A (en) * | 2019-09-06 | 2019-12-03 | 电子科技大学 | A kind of high-low pressure integrated device and its manufacturing method |
| CN110556387A (en) * | 2019-09-07 | 2019-12-10 | 电子科技大学 | Bidirectional constant current device based on SOI |
| CN111734593A (en) * | 2020-06-24 | 2020-10-02 | 电子科技大学 | Ion neutralizer based on cold cathode |
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| CN103426936A (en) * | 2013-08-22 | 2013-12-04 | 电子科技大学 | Vertical current regulative diode and manufacturing method thereof |
| CN103633149A (en) * | 2013-12-10 | 2014-03-12 | 杭州士兰集成电路有限公司 | Current regulative diode and manufacturing method thereof |
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| CN110556387A (en) * | 2019-09-07 | 2019-12-10 | 电子科技大学 | Bidirectional constant current device based on SOI |
| CN110556387B (en) * | 2019-09-07 | 2022-02-08 | 电子科技大学 | Bidirectional constant current device based on SOI |
| CN111734593A (en) * | 2020-06-24 | 2020-10-02 | 电子科技大学 | Ion neutralizer based on cold cathode |
| CN111734593B (en) * | 2020-06-24 | 2023-01-31 | 电子科技大学 | Ion neutralizer based on cold cathode |
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Application publication date: 20151230 |