CN103426936B - A kind of vertical current regulative diode and manufacture method thereof - Google Patents
A kind of vertical current regulative diode and manufacture method thereof Download PDFInfo
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Abstract
The present invention relates to semiconductor technology, relate to a kind of vertical current regulative diode and manufacture method thereof specifically.Straight type current regulator diode of the present invention, comprise the oxide layer, highly doped epitaxial loayer, lightly doped n-type epitaxial loayer, heavy doping N+ substrate and the metal anode that are cascading, it is characterized in that, also include the structure cell, terminal structure and the cut-off ring that connect successively, by multiple structure, the identical and cellular connected successively forms described structure cell, and by multiple structure, the identical and terminal connected successively forms described terminal structure.Beneficial effect of the present invention is, possesses easy pinch off, and pinch-off voltage can be low to moderate the advantage of below 5V, pinch-off point increases change more slowly with voltage simultaneously, and constant current is more stable, and device layout is more flexible, more reasonable structure, can save extra photolithography plate, save manufacturing cost.The present invention is particularly useful for current regulator diode.
Description
Technical field
The present invention relates to semiconductor technology, relate to a kind of vertical current regulative diode and manufacture method thereof specifically.
Background technology
Current regulator diode CRD (Current Regulative Diode) is a kind of semiconductor constant current device, can keep the current value that constant in certain operating voltage range.Semiconductor current regulator diode has very high motional impedance, well constant current performance, and low price and easy to use, be therefore widely applied in the protective circuit of constant-current source, source of stable pressure, amplifier and electronic instrument.Especially drive for LED (Light Emitting Diode), adopt constant-current source driving LED well to solve electric current that LED negative temperature coefficient brings sharply rises problems such as causing junction temperature rising, the lost of life.The constant current effect of current regulator diode can be used for driving LED just.But current current regulator diode Problems existing is.
Summary of the invention
Technical problem to be solved by this invention is exactly for the problems referred to above, proposes a kind of vertical current regulative diode and manufacture method thereof.
The present invention solves the problems of the technologies described above adopted technical scheme: a kind of vertical current regulative diode, comprise the oxide layer 7 be cascading, highly doped epitaxial loayer 6, lightly doped n-type epitaxial loayer 2, heavy doping N+ substrate 1 and metal anode 8, it is characterized in that, also include the structure cell connected successively, terminal structure and cut-off ring, by multiple structure, the identical and cellular connected successively forms described structure cell, described cellular comprises the first metallic cathode 3, one N+ heavily doped region 4 and a P+ heavy doping diffusion region 5, a described P+ heavy doping diffusion region 5 is two and lays respectively at the two ends of cellular, a described P+ heavy doping diffusion region 5 is run through highly doped epitaxial loayer 6 and extends in lightly doped n-type epitaxial loayer 2, a described N+ heavily doped region 4 is arranged on the upper surface also embedding the highly doped epitaxial loayer 6 between two P+ heavy doping diffusion regions 5 between two P+ heavy doping diffusion regions 5, described first metallic cathode 3 covers the upper surface of a N+ heavily doped region 4 and a P+ heavy doping diffusion region 5 and runs through oxide layer 7 completely, shape is groove shape simultaneously, the groove at two ends extends in a P+ heavy doping diffusion region 5, in groove, partial electrode is surrounded by P+ heavy doping diffusion region 5, by multiple structure, the identical and terminal connected successively forms described terminal structure, described terminal comprises the second metallic cathode 31 and the 2nd P+ heavy doping diffusion region 51, described 2nd P+ heavy doping diffusion region 51 is positioned at the one end near structure cell, run through highly doped epitaxial loayer 6 and extend in lightly doped n-type epitaxial loayer 2, at regular intervals between two adjacent the 2nd P+ heavy doping diffusion regions 51, described second metallic cathode 31 is groove shape, trench portions through part oxide layer 7 also extends in the 2nd P+ heavy doping diffusion region 51, in groove, partial electrode is surrounded by P+ heavy doping diffusion region 51, second metallic cathode 31 and the 2nd P+ heavy doping diffusion region 51 form field limiting ring, described cut-off ring comprises the 2nd N+ heavily doped region 41 embedding lightly doped n-type epitaxial loayer 2 end upper surface and is formed, 2nd N+ heavily doped region 41 upper surface capping oxidation layer 7, described structure cell, at regular intervals between terminal structure and cut-off ring.
Concrete, described second metallic cathode 31 extends to form field plate along oxide layer 7 upper surface.
Concrete, described highly doped epitaxial loayer 6 is identical with the concentration of lightly doped n-type epitaxial loayer 2.
Concrete, in described terminal structure, the width of the field limiting ring of each terminal is identical.
Concrete, in described terminal structure, the width of the field limiting ring of each terminal is different.
Concrete, the quantity of described structure cell and terminal structure is 6.
A manufacture method for vertical current regulative diode, is characterized in that, comprises the following steps:
The first step: adopt N-type silicon chip as substrate, first time extension formation lightly doped n-type epitaxial loayer 2 is carried out on surface thereon;
Second step: carry out second time extension, lightly doped n-type epitaxial loayer 2 superposes highly doped epitaxial loayer 6;
3rd step: grow one deck field oxide 7 at highly doped epitaxial loayer 6 upper surface, forms electrode and the groove etched barrier layer of field limiting ring;
4th step: etching window internal field oxygen, in highly doped epitaxial loayer 6 upper surface etch silicon to form the groove of the first metallic cathode 3, second metallic cathode 31 and field limiting ring, it is inner that first metallic cathode 3 and the second metallic cathode 31 extend highly doped epitaxial loayer 6, etches away whole silicon chip field oxygen;
5th step: carry out a P+ heavy doping diffusion region 5 and the 2nd P+ heavy doping diffusion region 51 inject before pre-oxygen, photoetching cellular and field limiting ring P+ window;
6th step: carry out a P+ heavy doping diffusion region 5 and the 2nd P+ heavy doping diffusion region 51 is injected, implantation dosage regulates according to different current capacity, then carry out P+ heavy doping diffusion region 5 and the 2nd P+ heavy doping diffusion region 51 knot, a P+ heavy doping diffusion region 5 and the 2nd P+ heavy doping diffusion region 51 are connected with the first metallic cathode 3 and the second metallic cathode 31 and extend in lightly doped n-type epitaxial loayer 2 respectively;
7th step: etch unnecessary oxide layer, a N+ heavily doped region 4 and the 2nd N+ heavily doped region 41 be pre-oxygen before injecting, photoetching N+ window;
8th step: carry out a N+ heavily doped region 4 and the 2nd N+ heavily doped region 41 is injected, cellular the one N+ heavily doped region 4 and terminal cut-off ring the 2nd N+ heavily doped region 41 are formed simultaneously, etch unnecessary oxide layer, one N+ heavily doped region 4 is between two P+ heavy doping diffusion regions 5 and upper surface is connected with the lower surface of the first metallic cathode 3, lower surface is connected with highly doped epitaxial loayer 6, and the 2nd N+ heavily doped region 41 is positioned at the end of highly doped epitaxial loayer 6;
9th step: pre-oxygen before deposit, medium before depositing metal;
Tenth step: ohm hole etches, deposit aluminum metal;
11 step: etching metal, forms metallic cathode 3 and terminal field limiting ring field plate;
12 step: deposit passivation layer, carves PAD hole;
13 step: N-type silicon chip lower surface forms metal anode 8.
Technical scheme of the present invention, for the contradictory problems of current regulator diode pinch-off voltage and constant current ability, the technique injecting diffusion after adopting twice extension and cutting achieves lower pinch-off voltage and good constant current ability, and terminal structure can be formed with structure cell simultaneously simultaneously, has saved cost.
Beneficial effect of the present invention is, metallic cathode is made groove shape, makes P+ heavy doping diffusion region transverse and longitudinal diffusion ratio little, shortens the distance bottom two P+ heavy doping diffusion regions, thus the easier pinch off of current regulator diode, pinch-off voltage can be low to moderate below 5V; Simultaneously extension one deck high-dopant concentration N-type epitaxy layer again on lightly doped n-type epitaxial loayer, it is ensure higher withstand voltage and lower pinch-off voltage and the too low problem causing electric current constant not of concentration that the epitaxial loayer of variable concentrations alleviates one deck epitaxial loayer, increase the doping content of channel region, make pinch-off point increase change more slowly with voltage, constant current is more stable; The number of the concentration of the N-type epitaxy layer of high-dopant concentration and the degree of depth, structure cell and terminal structure, last cellular all can regulate according to the requirement of specifically withstand voltage, constant current and pinch-off voltage apart from the distance of first terminal, last terminal to the distance of last ring, considerably increase the flexibility of device layout; Structure cell and terminal structure and P+ heavy doping diffusion region are formed in technique simultaneously, save extra photolithography plate, save manufacturing cost.
Accompanying drawing explanation
Fig. 1 is the structural representation of a kind of vertical current regulative diode of the present invention;
Fig. 2 is a kind of extended structure schematic diagram of the present invention, and wherein the second higher-doped epitaxial layer concentration is identical with the first light dope epitaxial layer concentration, is all the first light dope epitaxial loayer 2;
Fig. 3 is the process simulation schematic diagram of the structure cell of embodiment;
Fig. 4 is process simulation schematic diagram and the equipotential lines distribution map of the terminal structure of embodiment;
Fig. 5 is the performance diagram of a kind of vertical current regulative diode of embodiment;
Fig. 6 is initial silicon chip schematic diagram in the technique of the manufacture method of embodiment;
Fig. 7 is the schematic diagram delayed outside twice in the technique of the manufacture method of embodiment;
Fig. 8 is the schematic diagram in the technique of the manufacture method of embodiment after cutting;
Fig. 9 is that in the technique of the manufacture method of embodiment, a P+ heavy doping diffusion region 5 and the 2nd P+ heavy doping diffusion region 51 are injected and schematic diagram after knot;
Figure 10 be in the technique of the manufacture method of embodiment a N+ heavily doped region (4) and the 2nd N+ heavily doped region (41) inject after schematic diagram;
Figure 11 is the schematic diagram in the technique of the manufacture method of embodiment after depositing metal and passivation layer;
Figure 12 is the emulation schematic diagram of the initial silicon chip of embodiment;
Figure 13 is the emulation schematic diagram delayed outside twice of embodiment;
Figure 14 is the emulation schematic diagram after the cutting of embodiment;
Figure 15 is that a P+ heavy doping diffusion region 5 of embodiment and the 2nd P+ heavy doping diffusion region 51 are injected and emulation schematic diagram after knot;
Figure 16 is the emulation schematic diagram after a N+ heavily doped region (4) of embodiment and the 2nd N+ heavily doped region (41) are injected;
Figure 17 is the emulation schematic diagram after the depositing metal of embodiment and passivation layer.
Embodiment
Below in conjunction with drawings and Examples, describe technical scheme of the present invention in detail:
As shown in Figure 1, be the structural representation of a kind of vertical current regulative diode that the present invention proposes, wherein, the cellular 10 of vertical current regulative diode
(1), 10
(2)... 10
(i)be identical structure cell, comprise heavy doping N+ substrate 1, lightly doped n-type epitaxial loayer 2, first metallic cathode 3, a N+ heavily doped region 4, a P+ heavy doping diffusion region 5, highly doped epitaxial loayer 6, metal anode 8; Highly doped epitaxial loayer 6 is between two adjacent P+ heavy doping diffusion regions 5; The degree of depth of the one P+ heavy doping diffusion region 5 exceedes the degree of depth of higher-doped N-type epitaxy layer 6; One N+ heavily doped region 4, within highly doped epitaxial loayer 6, between two adjacent P+ heavy doping diffusion regions 5, forms ohmic contact; First metallic cathode 3 is groove shape, covers whole first cellular surface, and trench portions puts in a P+ heavy doping diffusion region 5, and in groove, partial electrode is surrounded by a P+ heavy doping diffusion region 5; N+ substrate 1 is connected with bottom metal anode 8.Cellular number i can require to adjust according to concrete current capacity.11 is last cellular distances apart from first terminal, and its length can be reconciled according to requirement of withstand voltage.
The terminal 12 of vertical current regulative diode
(1), 12
(2)... 12
(i)be terminal structure, be positioned at structure cell 10
(1), 10
(2)... 10
(i)outside, comprise heavily doped N+ type substrate 1, lightly doped n-type epitaxial loayer 2, second metallic cathode 31, the 2nd P+ heavy doping diffusion region 51, highly doped epitaxial loayer 6, metal anode 8; Doped N-type epitaxial loayer 6 is between two adjacent 2nd P+ type diffusion regions 51; The degree of depth of the 2nd P+ heavy doping diffusion region 51 exceedes the degree of depth of highly doped epitaxial loayer 6; Same, second metallic cathode 31 is groove shape, trench region extends in the 2nd P+ heavy doping diffusion region 51, in groove, partial electrode is surrounded by the 2nd P+ doped diffusion region 51, surface portion strides across oxide layer 7, the part striding across oxide layer 7 is called field plate, can regulate the length of field plate according to withstand voltage specific requirement; 2nd P+ heavy doping diffusion region 51 and the second metallic cathode 31 form field limiting ring; Device outermost top is the second heavily doped N+ district 41, is cut-off ring, prevents potential lines from consuming device edge.In the number i of terminal and terminal, the length of metal can adjust flexibly according to the difference of requirement of withstand voltage.13 is last terminal distances to last ring, and its distance can adjust according to requirement of withstand voltage.
Wherein, vertical current regulative diode adopts twice epitaxy technology, is on lightly doped n-type epitaxial loayer 2 respectively and highly doped epitaxial loayer 6.First lightly doped N-type epitaxy layer 2 makes the easier pinch off of current regulator diode and can bear higher withstand voltage, the N-type epitaxy layer 6 of high-dopant concentration is between adjacent two P+ heavy doping diffusion regions 5, increase the doping content of channel region, make pinch-off point increase change more slowly with voltage, constant current is more stable.
Groove shape made by first metallic cathode 3 of vertical current regulative diode and the second metallic cathode 31, trench region extends in a P+ heavy doping diffusion region 5 and the 2nd P+ heavy doping diffusion region 51, in groove, partial electrode is surrounded by P+ doped diffusion region, the P+ heavy doping diffusion region transverse and longitudinal diffusion ratio made is little, reduce the spacing bottom two P+ heavy doping diffusion regions, thus make the easier pinch off of current regulator diode.
Described vertical current regulative diode adopts finishes terminal technology, and terminal comprises the identical field limiting ring of junction depth, field limiting ring can have field plate cover, and by knot terminal technology, make epitaxial loayer be depleted to last field limiting ring, the transverse direction that effectively can improve this device is withstand voltage.
The field limiting ring width of described vertical current regulative diode terminal structure may be the same or different, and regulates according to concrete requirement of withstand voltage.
The requirement of withstand voltage of having no way of that has of the Metal field plate of described vertical current regulative diode terminal structure determines, its length also can regulate according to concrete requirement of withstand voltage.
The concentration of the highly doped N-type epitaxy layer 6 of described vertical current regulative diode and the degree of depth, cellular 10
(1), 10
(2)...10
(i), terminal 12
(1), 12
(2)... 12
(i)number i and last cellular according to the requirement adjustment of concrete withstand voltage and pinch-off voltage, the flexibility of device layout can be considerably increased apart from the distance 11 of first terminal, last terminal to the distance 13 of last ring.
As shown in Figure 2, for highly doped epitaxial loayer 6 identical with the concentration of lightly doped n-type epitaxial loayer 2 time, the structural representation of vertical current regulative diode of the present invention, advantage is that concentration is identical and saves manufacturing cost.But owing to only having one deck compared with the epitaxial loayer of low doping concentration, the resistance of channel region is less, pinch-off point change is fast, and device is unstable at constant current district electric current.
Operation principle of the present invention is:
Structure cell 10
(1), 10
(2)... 10
(i)be made up of heavy doping N+ type substrate 1, lightly doped n-type epitaxial loayer 2, first metallic cathode 3, a N+ heavily doped region 4, a P+ heavy doping type diffusion region 5, highly doped epitaxial loayer 6, metal anode 8; Terminal structure 12
(1), 12
(2)... 12
(i)be positioned at structure cell 10
(1), 10
(2)... 10
(i)outside, be made up of heavy doping N+ type substrate 1, lightly doped n-type epitaxial loayer 2, second metallic cathode 31, the 2nd P+ heavy doping diffusion region 51, highly doped epitaxial loayer 6, metal anode 8; The field plate length of terminal part can regulate its length according to requirement of withstand voltage.Device outermost top is the 2nd N+ heavily doped region 41, is cut-off ring, prevents potential lines from consuming device edge, and what the number of cellular and terminal and spacing all can require according to continuous current and pinch-off voltage does flexible.11 is last cellular distances apart from first terminal, and its length can regulate according to requirement of withstand voltage.
Lightly doped n-type epitaxial loayer 2 diffuses out multiple P+ heavy doping diffusion region 5 and the 2nd P+ heavy doping diffusion region 51, two depletion layers are formed according to PN junction principle between adjacent two P+ heavy doping diffusion regions, vertical-channel is formed between two depletion layers, superposed by the constant current of multiple vertical-channel parallel-connection structure, realize large constant current.
Described vertical current regulative diode, metal anode 8 connects high potential at the device back side, and the first metallic cathode 3 is connected electronegative potential with the second metallic cathode 31 in top device.Therefore light dope epitaxial loayer 2 current potential is higher than the P+ heavy doping diffusion region be connected with metallic cathode, and making the reverse-biased depletion layer expansion of the PN junction of formation, is vertical conduction channel between two depletion layers.Along with applied voltage becomes large, depletion layer thickness constantly thickeies, and depletion layer expansion makes conducting channel narrow.When raceway groove not yet pinch off time, channel resistance is semiconductor resistor, and electric current increases along with the increase of voltage, and now diode operation is in linear zone.When the depletion layer that applied voltage continues to increase to both sides contacts, be called raceway groove pinch off, anode voltage is now called pinch-off voltage.After raceway groove pinch off, continue to increase anode voltage, pinch-off point is slow with the increase change of anode voltage, and slow down so device current increases, form constant current function, now devices function is in constant current district.Groove shape made by first metallic cathode 3 of the present invention and the second metallic cathode 31, makes P+ heavy doping diffusion region transverse and longitudinal diffusion ratio little, shortens the distance bottom two P+ heavy doping diffusion regions, thus the easier pinch off of current regulator diode.Meanwhile, due to the present invention's extension one deck highly doped epitaxial loayer 6 again on lightly doped n-type epitaxial loayer 2, after making raceway groove pinch off, it is more slow that pinch-off point increases change with voltage, can realize better constant current ability.And the first lightly doped n-type epitaxial loayer ensure that device has higher withstand voltage and lower pinch-off voltage.The employing of twice extension, while making current regulator diode can have higher withstand voltage and lower pinch-off voltage, realizes good current constant ability
Embodiment:
Carry out process simulation by MEDICI simulation software to provided vertical current regulative diode as shown in Figure 1, simulation parameter is: initial silicon wafer thickness is about 200 μm, concentration 1E18cm
-3; The thickness of the first lightly doped n-type epitaxial loayer 2 is about 13 μm, and concentration is 1E15cm
-3; The thickness of the second higher-doped N-type epitaxy layer 6 is about 6 μm, and concentration is 4E15cm
-3; The dosage injecting boron is about 4E15cm
-3form P+ heavy doping diffusion region 5, the dosage injecting phosphorus is 4E15cm
-3form N+ heavy doping 4.Cellular 10
(1), 10
(2).... 10
(6)width equal, each width is about 20 μm, and the degree of depth of P+ heavy doping diffusion region 5 is about 8 μm, cellular 10
(1), 10
(2).... 10
(6)in the distance of two adjacent P+ heavy doping diffusion regions 5 equal, be about 2 μm.Terminal 12
(1), 12
(2), 12
(3)width equal, be about 16 μm; Spacing between each terminal is equal, is about 3 μm.The degree of depth that grooved metal 3 puts in P+ heavy doping diffusion region 5 is about 3 μm.
Fig. 3 is the process simulation schematic diagram of embodiment structure cell, first metallic cathode 3 of the present invention and the second metallic cathode 31 are groove shape, make the transverse and longitudinal of P+ heavy doping diffusion region diffusion ratio little, shorten the distance bottom two P+ heavy doping diffusion regions, thus the easier pinch off of current regulator diode.
Fig. 4 is process simulation schematic diagram and the equipotential lines distribution map of embodiment terminal structure; Terminal structure is mainly used in withstand voltage, and equipotential lines extends to the end of last termination field plate, and equipotential lines distribution uniform can bear larger voltage.
Fig. 5 is the performance diagram of a kind of vertical current regulative diode that embodiment provides.As can be seen from the figure pinch-off voltage of the present invention is at below 5V, this is the metallic cathode of the groove shape due to the present invention's employing, in groove, partial electrode is surrounded by P+ heavy doping diffusion region, make P+ heavy doping diffusion region transverse and longitudinal diffusion ratio little, reduce the spacing bottom two P+ heavy doping diffusion regions, the easier pinch off of device.Twice epitaxy technology of the present invention increases the doping content of vertical channel region, alleviating one deck epitaxial loayer is ensure higher withstand voltage and lower pinch-off voltage and the too low problem causing electric current constant not of concentration, make the change of pinch-off point slower, constant current is more stable, and the constant current district in current-voltage characteristic figure shows as more mild curve.
As shown in Fig. 6-Figure 11, the process flow diagram for the manufacture method of a vertical current regulative diode of the present invention:
The manufacture method of a kind of vertical current regulative diode of the present invention, comprises the following steps:
The first step: adopt N-type silicon chip as substrate, first time extension formation lightly doped n-type epitaxial loayer 2 is carried out on surface thereon;
Second step: carry out second time extension, lightly doped n-type epitaxial loayer 2 superposes highly doped epitaxial loayer 6;
3rd step: grow one deck field oxide 7 at highly doped epitaxial loayer 6 upper surface, forms electrode and the groove etched barrier layer of field limiting ring;
4th step: etching window internal field oxygen, in highly doped epitaxial loayer 6 upper surface etch silicon to form the groove of the first metallic cathode 3, second metallic cathode 31 and field limiting ring, it is inner that first metallic cathode 3 and the second metallic cathode 31 extend highly doped epitaxial loayer 6, etches away whole silicon chip field oxygen;
5th step: carry out a P+ heavy doping diffusion region 5 and the 2nd P+ heavy doping diffusion region 51 inject before pre-oxygen, photoetching cellular and field limiting ring P+ window;
6th step: carry out a P+ heavy doping diffusion region 5 and the 2nd P+ heavy doping diffusion region 51 is injected, implantation dosage regulates according to different current capacity, then carry out P+ heavy doping diffusion region 5 and the 2nd P+ heavy doping diffusion region 51 knot, a P+ heavy doping diffusion region 5 and the 2nd P+ heavy doping diffusion region 51 are connected with the first metallic cathode 3 and the second metallic cathode 31 and extend in lightly doped n-type epitaxial loayer 2 respectively;
7th step: etch unnecessary oxide layer, a N+ heavily doped region 4 and the 2nd N+ heavily doped region 41 be pre-oxygen before injecting, photoetching N+ window;
8th step: carry out a N+ heavily doped region 4 and the 2nd N+ heavily doped region 41 is injected, cellular the one N+ heavily doped region 4 and terminal cut-off ring the 2nd N+ heavily doped region 41 are formed simultaneously, etch unnecessary oxide layer, one N+ heavily doped region 4 is between two P+ heavy doping diffusion regions 5 and upper surface is connected with the lower surface of the first metallic cathode 3, lower surface is connected with highly doped epitaxial loayer 6, and the 2nd N+ heavily doped region 41 is positioned at the end of highly doped epitaxial loayer 6;
9th step: pre-oxygen before deposit, medium before depositing metal;
Tenth step: ohm hole etches, deposit aluminum metal;
11 step: etching metal, forms metallic cathode 3 and terminal field limiting ring field plate;
12 step: deposit passivation layer, carves PAD hole;
13 step: N-type silicon chip lower surface forms metal anode 8.
Wherein, vertical current regulative diode carries out a P+ heavy doping diffusion region 5 after adopting cutting and the 2nd P+ heavy doping diffusion region 51 is injected, and then carries out thermal diffusion, last depositing metal electrode.Reduce cut-in voltage value by this technology, solve the contradictory relation of pinch-off voltage and current constant.
The structure cell 10 of described vertical current regulative diode
(1), 10
(2)... 10
(i)with terminal structure 12
(1), 12
(2)... 12
(i)p+ heavy doping diffusion region be that the laggard row boron of simultaneously cutting injects and realizes, save extra photolithography plate, save manufacturing cost.
Described vertical current regulative diode semi-conducting material used is silicon materials.
Described vertical current regulative diode substrate used is N-type doped semiconductor materials.
First lightly doped n-type epitaxial loayer 2 concentration of described vertical current regulative diode can be identical with the second higher-doped N-type epitaxy layer 6.
Claims (6)
1. a vertical current regulative diode, comprise the oxide layer (7) be cascading, highly doped epitaxial loayer (6), lightly doped n-type epitaxial loayer (2), heavy doping N+ substrate (1) and metal anode (8), it is characterized in that, also include the structure cell connected successively, terminal structure and cut-off ring, by multiple structure, the identical and cellular connected successively forms described structure cell, described cellular comprises the first metallic cathode (3), one N+ heavily doped region (4) and a P+ heavy doping diffusion region (5), a described P+ heavy doping diffusion region (5) is two and lays respectively at the two ends of cellular, a described P+ heavy doping diffusion region (5) is run through highly doped epitaxial loayer (6) and is extended in lightly doped n-type epitaxial loayer (2), a described N+ heavily doped region (4) is arranged on the upper surface also embedding the highly doped epitaxial loayer (6) be positioned between two P+ heavy doping diffusion regions (5) between two P+ heavy doping diffusion regions (5), described first metallic cathode (3) covers the upper surface of a N+ heavily doped region (4) and a P+ heavy doping diffusion region (5) and runs through oxide layer (7) completely, shape is groove shape simultaneously, the groove at two ends extends in a P+ heavy doping diffusion region (5), by multiple structure, the identical and terminal connected successively forms described terminal structure, described terminal comprises the second metallic cathode (31) and the 2nd P+ heavy doping diffusion region (51), described 2nd P+ heavy doping diffusion region (51) is positioned at the one end near structure cell, run through highly doped epitaxial loayer (6) and extend in lightly doped n-type epitaxial loayer (2), at regular intervals between two adjacent the 2nd P+ heavy doping diffusion regions (51), described second metallic cathode (31) is groove shape, trench portions through part oxide layer (7) also extends in the 2nd P+ heavy doping diffusion region (51), second metallic cathode (31) and the 2nd P+ heavy doping diffusion region (51) form field limiting ring, described cut-off ring comprises the 2nd N+ heavily doped region (41) embedding lightly doped n-type epitaxial loayer (2) end upper surface and is formed, 2nd N+ heavily doped region (41) upper surface capping oxidation layer (7), described structure cell, at regular intervals between terminal structure and cut-off ring.
2. a kind of vertical current regulative diode according to claim 1, is characterized in that, described second metallic cathode (31) extends to form field plate along oxide layer (7) upper surface.
3. a kind of vertical current regulative diode according to claim 1, is characterized in that, described highly doped epitaxial loayer (6) is identical with the concentration of lightly doped n-type epitaxial loayer (2).
4. a kind of vertical current regulative diode according to claims 1 to 3 any one, is characterized in that, in described terminal structure, the width of the field limiting ring of each terminal is identical.
5. a kind of vertical current regulative diode according to claim 4, is characterized in that, the quantity of described structure cell and terminal structure is 6.
6. a manufacture method for vertical current regulative diode, is characterized in that, comprises the following steps:
The first step: adopt N-type silicon chip as substrate, first time extension formation lightly doped n-type epitaxial loayer (2) is carried out on surface thereon;
Second step: carry out second time extension, at lightly doped n-type epitaxial loayer (2) upper superposition highly doped epitaxial loayer (6);
3rd step: grow one deck field oxide (7) at highly doped epitaxial loayer (6) upper surface, forms electrode and the groove etched barrier layer of field limiting ring;
4th step: etching window internal field oxygen, in highly doped epitaxial loayer (6) upper surface etch silicon to form the groove of the first metallic cathode (3), the second metallic cathode (31) and field limiting ring, it is inner that first metallic cathode (3) and the second metallic cathode (31) extend highly doped epitaxial loayer (6), etches away whole silicon chip field oxygen;
5th step: carry out a P+ heavy doping diffusion region (5) and the front pre-oxygen of the 2nd P+ heavy doping diffusion region (51) injection, photoetching cellular and field limiting ring P+ window;
6th step: carry out a P+ heavy doping diffusion region (5) and the injection of the 2nd P+ heavy doping diffusion region (51), implantation dosage regulates according to different current capacity, then carry out a P+ heavy doping diffusion region (5) and the 2nd P+ heavy doping diffusion region (51) knot, a P+ heavy doping diffusion region (5) and the 2nd P+ heavy doping diffusion region (51) are connected with the first metallic cathode (3) and the second metallic cathode (31) respectively and extend in lightly doped n-type epitaxial loayer (2);
7th step: etch unnecessary oxide layer, a N+ heavily doped region (4) and the 2nd N+ heavily doped region (41) be pre-oxygen before injecting, photoetching N+ window;
8th step: carry out a N+ heavily doped region (4) and the injection of the 2nd N+ heavily doped region (41), cellular the one N+ heavily doped region (4) and terminal cut-off ring the 2nd N+ heavily doped region (41) are formed simultaneously, etch unnecessary oxide layer, one N+ heavily doped region (4) is positioned between two P+ heavy doping diffusion regions (5) and upper surface is connected with the lower surface of the first metallic cathode (3), lower surface is connected with highly doped epitaxial loayer (6), and the 2nd N+ heavily doped region (41) is positioned at the end of highly doped epitaxial loayer (6);
9th step: pre-oxygen before deposit, medium before depositing metal;
Tenth step: ohm hole etches, deposit aluminum metal;
11 step: etching metal, forms metallic cathode (3) and terminal field limiting ring field plate;
12 step: deposit passivation layer, carves PAD hole;
13 step: N-type silicon chip lower surface forms metal anode (8).
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|---|---|---|---|---|
| CN105576040B (en) * | 2014-10-14 | 2019-01-15 | 北大方正集团有限公司 | Current regulator diode and its manufacturing method |
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