CN103426936A - Vertical current regulative diode and manufacturing method thereof - Google Patents
Vertical current regulative diode and manufacturing method thereof Download PDFInfo
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- CN103426936A CN103426936A CN2013103682027A CN201310368202A CN103426936A CN 103426936 A CN103426936 A CN 103426936A CN 2013103682027 A CN2013103682027 A CN 2013103682027A CN 201310368202 A CN201310368202 A CN 201310368202A CN 103426936 A CN103426936 A CN 103426936A
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Abstract
The invention relates to semiconductor technology, in particular to a vertical current regulative diode and a manufacturing method thereof. The vertical current regulative diode comprises an oxide layer, a highly doped N-type epitaxial layer, a lightly doped N-type epitaxial layer, a heavily doped N+ substrate and a metal anode which are sequentially stacked. The vertical current regulative diode is characterized by further comprising a cellular structure, a terminal structure and a cut-off ring which are sequentially connected, the cellular structure comprises a plurality of cells which are the same in structure and are sequentially connected, and the terminal structure comprises a plurality of terminals which are the same in structure and are sequentially connected. The vertical current regulative diode has the advantages that the diode is easily pinched off, pinch-off voltage can be below 5V, a pinch-off point more slowly changes along with increase of the voltage, constant current is more stable, the diode is more flexible in design and more reasonable in structure, an additional photo-etching plate can be omitted, and manufacturing cost is saved. The manufacturing method is particularly applicable to the current regulative diode.
Description
Technical field
The present invention relates to semiconductor technology, relate to specifically a kind of vertical-type current regulator diode and manufacture method thereof.
Background technology
Current regulator diode CRD (Current Regulative Diode) is a kind of semiconductor constant current device, can in certain operating voltage range, keep a constant current value.Semiconductor constant current diode has very high motional impedance, well constant current performance, and low price and easy to use, therefore is widely applied in the protective circuit of constant-current source, source of stable pressure, amplifier and electronic instrument.Especially drive for LED (Light Emitting Diode), adopt the constant-current source driving LED can well solve electric current that the LED negative temperature coefficient the brings problems such as causing junction temperature rising, the lost of life that sharply rises.The constant current effect of current regulator diode can be used for driving LED just.But the problem that current current regulator diode exists is.
Summary of the invention
Technical problem to be solved by this invention, be exactly for the problems referred to above, proposes a kind of vertical-type current regulator diode and manufacture method thereof.
The present invention solves the problems of the technologies described above adopted technical scheme: a kind of vertical-type current regulator diode, comprise the oxide layer 7 be cascading, highly doped N-type epitaxial loayer 6, light dope N-type epitaxial loayer 2, heavy doping N+ substrate 1 and metal anode 8, it is characterized in that, also include the structure cell connected successively, terminal structure and cut-off ring, described structure cell and cellular that successively connect identical by a plurality of structures forms, described cellular comprises the first metallic cathode 3, the one N+ heavily doped region 4 and a P+ heavy doping diffusion region 5, a described P+ heavy doping diffusion region 5 is two and lays respectively at the two ends of cellular, a described P+ heavy doping diffusion region 5 is run through highly doped N-type epitaxial loayer 6 and is extended in light dope N-type epitaxial loayer 2, a described N+ heavily doped region 4 is arranged between two P+ heavy doping diffusion regions 5 and embeds the upper surface of the highly doped N-type epitaxial loayer 6 between two P+ heavy doping diffusion regions 5, described the first metallic cathode 3 covers the upper surface of a N+ heavily doped region 4 and a P+ heavy doping diffusion region 5 and runs through oxide layer 7 fully, be shaped as groove shape simultaneously, the groove at two ends extends in a P+ heavy doping diffusion region 5, in groove, partial electrode is surrounded by P+ heavy doping diffusion region 5, described terminal structure and terminal that successively connect identical by a plurality of structures forms, described terminal comprises the second metallic cathode 31 and the 2nd P+ heavy doping diffusion region 51, described the 2nd P+ heavy doping diffusion region 51 is positioned at the end near structure cell, run through highly doped N-type epitaxial loayer 6 and extend in light dope N-type epitaxial loayer 2, at regular intervals between the 2nd P+ heavy doping diffusion region 51 of two terminal structures, described the second metallic cathode 31 is groove shape, trench portions runs through partial oxidation layer 7 and extends in the 2nd P+ heavy doping diffusion region 51, in groove, partial electrode is surrounded by P+ heavy doping diffusion region 51, the second metallic cathode 31 and the 2nd P+ heavy doping diffusion region 51 form field limiting ring, described cut-off ring comprises that the 2nd N+ heavily doped region 41 that embeds light dope N-type epitaxial loayer 2 end upper surfaces forms, the 2nd N+ heavily doped region 41 upper surface capping oxidation layers 7, described structure cell, at regular intervals between terminal structure and cut-off ring.
Concrete, described the second metallic cathode 31 extends to form field plate along oxide layer 7 upper surfaces.
Concrete, described highly doped N-type epitaxial loayer 6 is identical with the concentration of light dope N-type epitaxial loayer 2.
Concrete, in described terminal structure, the width of the field limiting ring of each terminal is identical.
Concrete, the width difference of the field limiting ring of each terminal in described terminal structure.
Concrete, the quantity of described structure cell and terminal structure is 6.
A kind of manufacture method of vertical-type current regulator diode, is characterized in that, comprises the following steps:
The first step: adopt the N-type silicon chip as substrate, surface is carried out extension for the first time and is formed light dope N-type epitaxial loayer 2 thereon;
Second step: carry out extension for the second time, the highly doped N-type epitaxial loayer 6 of stack on light dope N-type epitaxial loayer 2;
The 3rd step: at highly doped N-type epitaxial loayer 6 upper surface growth one deck field oxides 7, form electrode and the groove etched barrier layer of field limiting ring;
The 4th step: etching window internal field oxygen, groove at highly doped N-type epitaxial loayer 6 upper surface etch silicon the first metallic cathodes 3, the second metallic cathode 31 and field limiting ring, the first metallic cathode 3 and the second metallic cathode 31 extend highly doped N-type epitaxial loayer 6 inside, etch away whole silicon chip field oxygen;
The 5th step: carry out a P+ heavy doping diffusion region 5 and the front pre-oxygen of the 2nd P+ heavy doping diffusion region 51 injection, photoetching cellular and field limiting ring P+ window;
The 6th step: carry out a P+ heavy doping diffusion region 5 and the 2nd P+ heavy doping diffusion region 51 injections, implantation dosage is regulated according to different current capacities, then carry out a P+ heavy doping diffusion region 5 and the 2nd P+ heavy doping diffusion region 51 knots, a P+ heavy doping diffusion region 5 is connected with the second metallic cathode 31 and extends in light dope N-type epitaxial loayer 2 with the first metallic cathode 3 respectively with the 2nd P+ heavy doping diffusion region 51;
The 7th step: the oxide layer that etching is unnecessary, pre-oxygen before a N+ heavily doped region 4 and the 2nd N+ heavily doped region 41 inject, photoetching N+ window;
The 8th step: carry out a N+ heavily doped region 4 and the 2nd N+ heavily doped region 41 injections, cellular the one N+ heavily doped region 4 and terminal cut-off ring the 2nd N+ heavily doped region 41 form simultaneously, the oxide layer that etching is unnecessary, the one N+ heavily doped region 4 is between two P+ heavy doping diffusion regions 5 and upper surface is connected with the lower surface of the first metallic cathode 3, lower surface is connected with highly doped N-type epitaxial loayer 6, and the 2nd N+ heavily doped region 41 is positioned at the end of highly doped N-type epitaxial loayer 6;
The 9th step: pre-oxygen before deposit, medium before depositing metal;
The tenth step: ohm hole etching, deposit aluminum metal;
The 11 step: the etching metal forms metallic cathode 3 and terminal field limiting ring field plate;
The 12 step: the deposit passivation layer, carve the PAD hole;
The 13 step: N-type silicon chip lower surface forms metal anode 8.
Technical scheme of the present invention, contradictory problems for current regulator diode pinch-off voltage and constant current ability, adopt after twice extension and cutting the technique of injecting diffusion to realize lower pinch-off voltage and constant current ability preferably, the while terminal structure can form with structure cell simultaneously, has saved cost.
Beneficial effect of the present invention is, metallic cathode is made to groove shape, makes P+ heavy doping diffusion region transverse and longitudinal diffusion ratio little, shortened the distance of bottom, two P+ heavy doping diffusion regions, thus the easier pinch off of current regulator diode, and pinch-off voltage can be low to moderate below 5V; Extension one deck high-dopant concentration N-type epitaxial loayer again on light dope N-type epitaxial loayer simultaneously, the epitaxial loayer of variable concentrations has been alleviated one deck epitaxial loayer for guaranteeing the higher withstand voltage and low too low constant not problem of electric current that causes of pinch-off voltage concentration, increased the doping content of channel region, make pinch-off point change with the voltage increase slower, constant current is more stable; The concentration of the N-type epitaxial loayer of high-dopant concentration and the number of the degree of depth, structure cell and terminal structure, last cellular distance apart from the distance of first terminal, last terminal to last ring all can be regulated according to the concrete requirement of withstand voltage, constant current and pinch-off voltage, has greatly increased the flexibility that device designs; Structure cell and terminal structure and P+ heavy doping diffusion region form on technique simultaneously, save extra photolithography plate, have saved manufacturing cost.
The accompanying drawing explanation
Fig. 1 is the structural representation of a kind of vertical-type current regulator diode of the present invention;
Fig. 2 is a kind of extended structure schematic diagram of the present invention, and wherein the second higher-doped epitaxial layer concentration is identical with the first light dope epitaxial layer concentration, is all the first light dope epitaxial loayer 2;
Fig. 3 is the process simulation schematic diagram of the structure cell of embodiment;
Fig. 4 is process simulation schematic diagram and the equipotential lines distribution map of the terminal structure of embodiment;
Fig. 5 is the performance diagram of a kind of vertical-type current regulator diode of embodiment;
Fig. 6 is initial silicon chip schematic diagram in the technique of manufacture method of embodiment;
Fig. 7 is twice outer schematic diagram of delaying in the technique of manufacture method of embodiment;
Fig. 8 is the schematic diagram after cutting in the technique of manufacture method of embodiment;
Fig. 9 be in the technique of manufacture method of embodiment a P+ heavy doping diffusion region 5 and the 2nd P+ heavy doping diffusion region 51 is injected and knot after schematic diagram;
Figure 10 is a N+ heavily doped region (4) and the 2nd N+ heavily doped region (41) schematic diagram after injecting in the technique of manufacture method of embodiment;
Figure 11 is the schematic diagram after depositing metal and passivation layer in the technique of manufacture method of embodiment;
Figure 12 is the emulation schematic diagram of the initial silicon chip of embodiment;
Figure 13 is the outer emulation schematic diagram of delaying of twice of embodiment;
Figure 14 is the emulation schematic diagram after the cutting of embodiment;
Figure 15 is the P+ heavy doping diffusion region 5 of embodiment and the emulation schematic diagram after the 2nd P+ heavy doping diffusion region 51 injections and knot;
Figure 16 is the N+ heavily doped region (4) of embodiment and the emulation schematic diagram after the injection of the 2nd N+ heavily doped region (41);
Figure 17 is the depositing metal of embodiment and the emulation schematic diagram after passivation layer.
Embodiment
Below in conjunction with drawings and Examples, describe technical scheme of the present invention in detail:
As shown in Figure 1, the structural representation of a kind of vertical-type current regulator diode proposed for the present invention, wherein, the cellular 10 of vertical-type current regulator diode
(1), 10
(2)... 10
(i)Be identical structure cell, comprise heavy doping N+ substrate 1, light dope N-type epitaxial loayer 2, the first metallic cathode 3, a N+ heavily doped region 4, a P+ heavy doping diffusion region 5, highly doped N-type epitaxial loayer 6, metal anode 8; Highly doped N-type epitaxial loayer 6 is between two adjacent P+ heavy doping diffusion regions 5; The degree of depth of the one P+ heavy doping diffusion region 5 surpasses the degree of depth of higher-doped N-type epitaxial loayer 6; The one N+ heavily doped region 4, within highly doped N-type epitaxial loayer 6, between two adjacent P+ heavy doping diffusion regions 5, forms ohmic contact; The first metallic cathode 3 is groove shape, covers whole first cellular surface, and trench portions puts in a P+ heavy doping diffusion region 5, and in groove, partial electrode is surrounded by a P+ heavy doping diffusion region 5; N+ substrate 1 is connected with bottom metal anode 8.Cellular number i can require to be adjusted according to concrete current capacity.The 11st, last cellular is apart from the distance of first terminal, and its length can be reconciled according to requirement of withstand voltage.
The terminal 12 of vertical-type current regulator diode
(1), 12
(2)... 12
(i)Be terminal structure, be positioned at structure cell 10
(1), 10
(2)... 10
(i)The outside, comprise heavily doped N+ type substrate 1, light dope N-type epitaxial loayer 2, the second metallic cathode 31, the 2nd P+ heavy doping diffusion region 51, highly doped N-type epitaxial loayer 6, metal anode 8; Doped N-type epitaxial loayer 6 is between two adjacent the 2nd P+ type diffusion regions 51; The degree of depth of the 2nd P+ heavy doping diffusion region 51 surpasses the degree of depth of highly doped N-type epitaxial loayer 6; Same, the second metallic cathode 31 is groove shape, trench region extends in the 2nd P+ heavy doping diffusion region 51, in groove, partial electrode is surrounded by the 2nd P+ doped diffusion region 51, surface portion strides across oxide layer 7, the part that strides across oxide layer 7 is called field plate, can regulate according to withstand voltage specific requirement the length of field plate; The 2nd P+ heavy doping diffusion region 51 and the second metallic cathode 31 form field limiting ring; Device outermost top is the second heavily doped N+ district 41, for the cut-off ring, prevents that potential lines from consuming device edge.On the number i of terminal and terminal, the length of metal can be adjusted flexibly according to the difference of requirement of withstand voltage.The 13rd, last terminal is to the distance of last ring, and its distance can be according to the requirement of withstand voltage adjustment.
Wherein, the vertical-type current regulator diode adopts epitaxy technology twice, is respectively on light dope N-type epitaxial loayer 2 and highly doped N-type epitaxial loayer 6.The first lightly doped N-type epitaxial loayer 2 makes the easier pinch off of current regulator diode and can bear higher withstand voltage, the N-type epitaxial loayer 6 of high-dopant concentration is between adjacent two P+ heavy doping diffusion regions 5, increased the doping content of channel region, make pinch-off point change with the voltage increase slower, constant current is more stable.
The first metallic cathode 3 and second metallic cathode 31 of vertical-type current regulator diode are made groove shape, trench region extends in a P+ heavy doping diffusion region 5 and the 2nd P+ heavy doping diffusion region 51, in groove, partial electrode is surrounded by the P+ doped diffusion region, the P+ heavy doping diffusion region transverse and longitudinal diffusion ratio made is little, reduced the spacing of bottom, two P+ heavy doping diffusion regions, thereby made the easier pinch off of current regulator diode.
Described vertical-type current regulator diode adopts and finishes terminal technology, and terminal comprises the field limiting ring that junction depth is identical, on field limiting ring, can have field plate to cover, and by the knot terminal technology, makes epitaxial loayer be depleted to last field limiting ring, can effectively improve the laterally withstand voltage of this device.
The field limiting ring width of described vertical-type current regulator diode terminal structure can be identical or different, according to concrete requirement of withstand voltage, regulates.
The requirement of withstand voltage of having no way of that has of the Metal field plate of described vertical-type current regulator diode terminal structure determines, its length also can be regulated according to concrete requirement of withstand voltage.
The concentration of the highly doped N-type epitaxial loayer 6 of described vertical-type current regulator diode and the degree of depth, cellular 10
(1), 10
(2)... 10
(i), terminal 12
(1), 12
(2)... 12
(i)Number i and the distance 13 of last cellular apart from the distance 11 of first terminal, last terminal to last ring can regulate according to concrete withstand voltage and requirement pinch-off voltage, greatly increase the flexibility of device design.
As shown in Figure 2, for the concentration of highly doped N-type epitaxial loayer 6 and light dope N-type epitaxial loayer 2 when identical, the structural representation of vertical-type current regulator diode of the present invention, advantage is the identical manufacturing cost of saving of concentration.But, due to the epitaxial loayer that only has one deck than low doping concentration, the resistance of channel region is less, pinch-off point changes fast, and device is unstable at constant current district electric current.
Operation principle of the present invention is:
Diffuse out a plurality of P+ heavy doping diffusion regions 5 and the 2nd P+ heavy doping diffusion region 51 on light dope N-type epitaxial loayer 2, form two depletion layers according to the PN junction principle between adjacent two P+ heavy doping diffusion regions, form vertical-channel between two depletion layers, constant current stack by a plurality of vertical-channel parallel-connection structures, realize large constant current.
Described vertical-type current regulator diode, metal anode 8 connects high potential at the device back side, and the first metallic cathode 3 is connected electronegative potential with the second metallic cathode 31 in top device.Therefore light dope epitaxial loayer 2 current potentials, higher than the P+ heavy doping diffusion region be connected with metallic cathode, make the anti-depletion layer partially of the PN junction expansion formed, and between two depletion layers, are the vertical conduction raceway grooves.Along with applied voltage becomes large, depletion layer thickness is constantly thickeied, and the depletion layer expansion narrows down conducting channel.When raceway groove, not yet during pinch off, channel resistance is semiconductor resistor, and electric current increases along with the increase of voltage, and now diode operation is at linear zone.When the depletion layer that continues to increase to both sides when applied voltage contacts, be called the raceway groove pinch off, anode voltage now is called pinch-off voltage.After the raceway groove pinch off, continue to increase anode voltage, pinch-off point changes slowly with the increase of anode voltage, so device current increases, slows down, and forms the constant current function, and now device is operated in the constant current district.The first metallic cathode 3 of the present invention and the second metallic cathode 31 are made groove shape, make P+ heavy doping diffusion region transverse and longitudinal diffusion ratio little, have shortened the distance of bottom, two P+ heavy doping diffusion regions, thus the easier pinch off of current regulator diode.Simultaneously, due to the present invention's highly doped N-type epitaxial loayer 6 of extension one deck again on light dope N-type epitaxial loayer 2, after making the raceway groove pinch off, pinch-off point increases and changes slowlyer with voltage, can realize better constant current ability.And the first light dope N-type epitaxial loayer has guaranteed that device has higher withstand voltage and lower pinch-off voltage.The employing of twice extension, when making current regulator diode can have higher withstand voltage and low pinch-off voltage, realize current constant ability preferably
Embodiment:
By the MEDICI simulation software, provided vertical-type current regulator diode is as shown in Figure 1 carried out to process simulation, simulation parameter is: initial silicon wafer thickness is about 200 μ m, concentration 1E18cm
-3The thickness of the first light dope N-type epitaxial loayer 2 is about 13 μ m, and concentration is 1E15cm
-3The thickness of the second higher-doped N-type epitaxial loayer 6 is about 6 μ m, and concentration is 4E15cm
-3The dosage of B Implanted is about 4E15cm
-3Form P+ heavy doping diffusion region 5, the dosage that injects phosphorus is 4E15cm
-3Form N+ heavy doping 4.Cellular 10
(1), 10
(2)... .10
(6)Width equate, each width is about 20 μ m, the degree of depth of P+ heavy doping diffusion region 5 is about 8 μ m, cellular 10
(1), 10
(2)... .10
(6)In the distance of two adjacent P+ heavy doping diffusion regions 5 equate, be about 2 μ m.Terminal 12
(1), 12
(2), 12
(3)Width equate, be about 16 μ m; Spacing between each terminal equates, is about 3 μ m.The degree of depth that grooved metal 3 puts in P+ heavy doping diffusion region 5 is about 3 μ m.
Fig. 3 is the process simulation schematic diagram of embodiment structure cell, the first metallic cathode 3 of the present invention and the second metallic cathode 31 are groove shape, make the transverse and longitudinal diffusion ratio of P+ heavy doping diffusion region little, shortened the distance of bottom, two P+ heavy doping diffusion regions, thus the easier pinch off of current regulator diode.
Fig. 4 is process simulation schematic diagram and the equipotential lines distribution map of embodiment terminal structure; Terminal structure is mainly used in withstand voltage, and equipotential lines extends to the end of last terminal field plate, and the equipotential lines distribution uniform can be born larger voltage.
Fig. 5 is the performance diagram of a kind of vertical-type current regulator diode of providing of embodiment.As can be seen from the figure pinch-off voltage of the present invention is below 5V, this is the metallic cathode due to the groove shape of the present invention's employing, in groove, partial electrode is surrounded by P+ heavy doping diffusion region, make P+ heavy doping diffusion region transverse and longitudinal diffusion ratio little, reduced the spacing of bottom, two P+ heavy doping diffusion regions, the easier pinch off of device.Twice epitaxy technology of the present invention increased the doping content of vertical channel region, alleviated one deck epitaxial loayer for guaranteeing the higher withstand voltage and low too low constant not problem of electric current that causes of pinch-off voltage concentration, make the variation of pinch-off point slower, constant current is more stable, and the constant current district in current-voltage characteristic figure shows as more mild curve.
As shown in Fig. 6-Figure 11, be the process flow diagram of the manufacture method of a vertical-type current regulator diode of the present invention:
The manufacture method of a kind of vertical-type current regulator diode of the present invention comprises the following steps:
The first step: adopt the N-type silicon chip as substrate, surface is carried out extension for the first time and is formed light dope N-type epitaxial loayer 2 thereon;
Second step: carry out extension for the second time, the highly doped N-type epitaxial loayer 6 of stack on light dope N-type epitaxial loayer 2;
The 3rd step: at highly doped N-type epitaxial loayer 6 upper surface growth one deck field oxides 7, form electrode and the groove etched barrier layer of field limiting ring;
The 4th step: etching window internal field oxygen, groove at highly doped N-type epitaxial loayer 6 upper surface etch silicon the first metallic cathodes 3, the second metallic cathode 31 and field limiting ring, the first metallic cathode 3 and the second metallic cathode 31 extend highly doped N-type epitaxial loayer 6 inside, etch away whole silicon chip field oxygen;
The 5th step: carry out a P+ heavy doping diffusion region 5 and the front pre-oxygen of the 2nd P+ heavy doping diffusion region 51 injection, photoetching cellular and field limiting ring P+ window;
The 6th step: carry out a P+ heavy doping diffusion region 5 and the 2nd P+ heavy doping diffusion region 51 injections, implantation dosage is regulated according to different current capacities, then carry out a P+ heavy doping diffusion region 5 and the 2nd P+ heavy doping diffusion region 51 knots, a P+ heavy doping diffusion region 5 is connected with the second metallic cathode 31 and extends in light dope N-type epitaxial loayer 2 with the first metallic cathode 3 respectively with the 2nd P+ heavy doping diffusion region 51;
The 7th step: the oxide layer that etching is unnecessary, pre-oxygen before a N+ heavily doped region 4 and the 2nd N+ heavily doped region 41 inject, photoetching N+ window;
The 8th step: carry out a N+ heavily doped region 4 and the 2nd N+ heavily doped region 41 injections, cellular the one N+ heavily doped region 4 and terminal cut-off ring the 2nd N+ heavily doped region 41 form simultaneously, the oxide layer that etching is unnecessary, the one N+ heavily doped region 4 is between two P+ heavy doping diffusion regions 5 and upper surface is connected with the lower surface of the first metallic cathode 3, lower surface is connected with highly doped N-type epitaxial loayer 6, and the 2nd N+ heavily doped region 41 is positioned at the end of highly doped N-type epitaxial loayer 6;
The 9th step: pre-oxygen before deposit, medium before depositing metal;
The tenth step: ohm hole etching, deposit aluminum metal;
The 11 step: the etching metal forms metallic cathode 3 and terminal field limiting ring field plate;
The 12 step: the deposit passivation layer, carve the PAD hole;
The 13 step: N-type silicon chip lower surface forms metal anode 8.
Wherein, the vertical-type current regulator diode carries out a P+ heavy doping diffusion region 5 and the 2nd P+ heavy doping diffusion region 51 injections after adopting cutting, then carries out thermal diffusion, last depositing metal electrode.By this Techniques For Reducing cut-in voltage value, solve the contradictory relation of pinch-off voltage and current constant.
The structure cell 10 of described vertical-type current regulator diode
(1), 10
(2)... 10
(i)With terminal structure 12
(1), 12
(2)... 12
(i)P+ heavy doping diffusion region be that the laggard row boron of simultaneously cutting injects and realizes, save extra photolithography plate, saved manufacturing cost.
Described vertical-type current regulator diode semi-conducting material used is silicon materials.
Described vertical-type current regulator diode substrate used is the N-type doped semiconductor materials.
The first light dope N-type epitaxial loayer 2 concentration of described vertical-type current regulator diode can be identical with the second higher-doped N-type epitaxial loayer 6.
Claims (6)
1. a vertical-type current regulator diode, comprise the oxide layer (7) be cascading, highly doped N-type epitaxial loayer (6), light dope N-type epitaxial loayer (2), heavy doping N+ substrate (1) and metal anode (8), it is characterized in that, also include the structure cell connected successively, terminal structure and cut-off ring, described structure cell and cellular that successively connect identical by a plurality of structures forms, described cellular comprises the first metallic cathode (3), the one N+ heavily doped region (4) and a P+ heavy doping diffusion region (5), a described P+ heavy doping diffusion region (5) is two and lays respectively at the two ends of cellular, a described P+ heavy doping diffusion region (5) is run through highly doped N-type epitaxial loayer (6) and is extended in light dope N-type epitaxial loayer (2), a described N+ heavily doped region (4) is arranged between two P+ heavy doping diffusion regions (5) and embeds the upper surface that is positioned at two highly doped N-type epitaxial loayers (6) between a P+ heavy doping diffusion region (5), described the first metallic cathode (3) covers the upper surface of a N+ heavily doped region (4) and a P+ heavy doping diffusion region (5) and runs through oxide layer (7) fully, be shaped as groove shape simultaneously, the groove at two ends extends in a P+ heavy doping diffusion region (5), described terminal structure and terminal that successively connect identical by a plurality of structures forms, described terminal comprises the second metallic cathode (31) and the 2nd P+ heavy doping diffusion region (51), described the 2nd P+ heavy doping diffusion region (51) is positioned at the end near structure cell, run through highly doped N-type epitaxial loayer (6) and extend in light dope N-type epitaxial loayer (2), at regular intervals between the 2nd P+ heavy doping diffusion region (51) of two terminal structures, described the second metallic cathode (31) is groove shape, trench portions runs through partial oxidation layer (7) and extends in the 2nd P+ heavy doping diffusion region (51), the second metallic cathode (31) and the 2nd P+ heavy doping diffusion region (51) form field limiting ring, described cut-off ring comprises that the 2nd N+ heavily doped region (41) that embeds light dope N-type epitaxial loayer (2) end upper surface forms, the 2nd N+ heavily doped region (41) upper surface capping oxidation layer (7), described structure cell, at regular intervals between terminal structure and cut-off ring.
2. a kind of vertical-type current regulator diode according to claim 1, is characterized in that, described the second metallic cathode (31) extends to form field plate along oxide layer (7) upper surface.
3. a kind of vertical-type current regulator diode according to claim 1, is characterized in that, described highly doped N-type epitaxial loayer (6) is identical with the concentration of light dope N-type epitaxial loayer (2).
4. according to the described a kind of vertical-type current regulator diode of claim 1～3 any one, it is characterized in that, in described terminal structure, the width of the field limiting ring of each terminal is identical.
5. a kind of vertical-type current regulator diode according to claim 4, is characterized in that, the quantity of described structure cell and terminal structure is 6.
6. the manufacture method of a vertical-type current regulator diode, is characterized in that, comprises the following steps:
The first step: adopt the N-type silicon chip as substrate, surface is carried out extension for the first time and is formed light dope N-type epitaxial loayer (2) thereon;
Second step: carry out extension for the second time, at the upper stack of light dope N-type epitaxial loayer (2) highly doped N-type epitaxial loayer (6);
The 3rd step: at highly doped N-type epitaxial loayer (6) upper surface growth one deck field oxide (7), form electrode and the groove etched barrier layer of field limiting ring;
The 4th step: etching window internal field oxygen, groove at highly doped N-type epitaxial loayer (6) upper surface etch silicon the first metallic cathode (3), the second metallic cathode (31) and field limiting ring, the first metallic cathode (3) and the second metallic cathode (31) extend highly doped N-type epitaxial loayer (6) inside, etch away whole silicon chip field oxygen;
The 5th step: carry out a P+ heavy doping diffusion region (5) and the 2nd P+ heavy doping diffusion region (51) and inject front pre-oxygen, photoetching cellular and field limiting ring P+ window;
The 6th step: carry out a P+ heavy doping diffusion region (5) and the 2nd P+ heavy doping diffusion region (51) and inject, implantation dosage is regulated according to different current capacities, then carry out a P+ heavy doping diffusion region (5) and the 2nd P+ heavy doping diffusion region (51) knot, a P+ heavy doping diffusion region (5) is connected with the second metallic cathode (31) and extends in light dope N-type epitaxial loayer (2) with the first metallic cathode (3) respectively with the 2nd P+ heavy doping diffusion region (51);
The 7th step: the oxide layer that etching is unnecessary, pre-oxygen before a N+ heavily doped region (4) and the 2nd N+ heavily doped region (41) inject, photoetching N+ window;
The 8th step: carry out a N+ heavily doped region (4) and the 2nd N+ heavily doped region (41) and inject, cellular the one N+ heavily doped region (4) and terminal cut-off ring the 2nd N+ heavily doped region (41) form simultaneously, the oxide layer that etching is unnecessary, the one N+ heavily doped region (4) is positioned between two P+ heavy doping diffusion regions (5) and upper surface is connected with the lower surface of the first metallic cathode (3), lower surface is connected with highly doped N-type epitaxial loayer (6), and the 2nd N+ heavily doped region (41) is positioned at the end of highly doped N-type epitaxial loayer (6);
The 9th step: pre-oxygen before deposit, medium before depositing metal;
The tenth step: ohm hole etching, deposit aluminum metal;
The 11 step: the etching metal forms metallic cathode (3) and terminal field limiting ring field plate;
The 12 step: the deposit passivation layer, carve the PAD hole;
The 13 step: N-type silicon chip lower surface forms metal anode (8).
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104638022A (en) * | 2015-02-15 | 2015-05-20 | 电子科技大学 | SOI (Silicon-On-Insulator) lateral current regulative diode and manufacturing method thereof |
| CN104638020A (en) * | 2015-02-15 | 2015-05-20 | 电子科技大学 | Epitaxial layer-based vertical current regulative diode and manufacturing method thereof |
| CN105206682A (en) * | 2015-09-09 | 2015-12-30 | 电子科技大学 | Vertical current regulative diode and manufacturing method thereof |
| CN105576040A (en) * | 2014-10-14 | 2016-05-11 | 北大方正集团有限公司 | Constant-current diode and manufacturing method thereof |
| CN106206750A (en) * | 2016-07-27 | 2016-12-07 | 电子科技大学 | Three ends carry vertical-type constant current device and the manufacture method thereof of safeguard function |
| CN106206574A (en) * | 2016-07-27 | 2016-12-07 | 电子科技大学 | Three ends carry vertical-type constant current device and the manufacture method thereof of safeguard function |
| CN106206751A (en) * | 2016-07-27 | 2016-12-07 | 电子科技大学 | Three ends carry vertical-type constant current device and the manufacture method thereof of safeguard function |
| CN106328515A (en) * | 2015-06-30 | 2017-01-11 | 北大方正集团有限公司 | Current regulative diode and manufacturing method thereof |
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| CN105576040A (en) * | 2014-10-14 | 2016-05-11 | 北大方正集团有限公司 | Constant-current diode and manufacturing method thereof |
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| CN104638022A (en) * | 2015-02-15 | 2015-05-20 | 电子科技大学 | SOI (Silicon-On-Insulator) lateral current regulative diode and manufacturing method thereof |
| CN104638020A (en) * | 2015-02-15 | 2015-05-20 | 电子科技大学 | Epitaxial layer-based vertical current regulative diode and manufacturing method thereof |
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| CN105206682A (en) * | 2015-09-09 | 2015-12-30 | 电子科技大学 | Vertical current regulative diode and manufacturing method thereof |
| CN106206750A (en) * | 2016-07-27 | 2016-12-07 | 电子科技大学 | Three ends carry vertical-type constant current device and the manufacture method thereof of safeguard function |
| CN106206574A (en) * | 2016-07-27 | 2016-12-07 | 电子科技大学 | Three ends carry vertical-type constant current device and the manufacture method thereof of safeguard function |
| CN106206751A (en) * | 2016-07-27 | 2016-12-07 | 电子科技大学 | Three ends carry vertical-type constant current device and the manufacture method thereof of safeguard function |
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