CN105206590B - PHEMT Microwave Power Amplifier tube core transversaries and pHEMT that air bridges side is drawn - Google Patents
PHEMT Microwave Power Amplifier tube core transversaries and pHEMT that air bridges side is drawn Download PDFInfo
- Publication number
- CN105206590B CN105206590B CN201510589789.3A CN201510589789A CN105206590B CN 105206590 B CN105206590 B CN 105206590B CN 201510589789 A CN201510589789 A CN 201510589789A CN 105206590 B CN105206590 B CN 105206590B
- Authority
- CN
- China
- Prior art keywords
- tube core
- phemt
- connection
- grid
- drawn
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
The invention discloses the pHEMT Microwave Power Amplifier tube core transversaries and pHEMT that a kind of air bridges side is drawn.The structure refers to 5 shared source electrodes of parallel-connection structure, 8 grids, 4 shared drain electrodes including 8 grid, the metal lead wire of 4 drain electrodes of connection on the right side of tube core, the metal lead wire of 8 grids of connection on the left of tube core, the annular ground through hole of 2 parallel die arrangements on the left of tube core, and 2 grounding through hole of connection and the air bridge structure of 5 source electrodes drawn on the left of tube core.The present invention has the characteristics of parasitic capacitance between source electrode, grid between source electrode, drain electrode is small, so that service behaviour of the tube core in microwave frequency band is improved, and the Multi-core plate area of pictural surface in parallel when can significantly reduce power combing.
Description
Technical field
The present invention relates to the pHEMT Microwave Power Amplifier tube core transversaries that a kind of air bridges side is drawn, it is adaptable to pHEMT
The tube core of 0.25um technique Microwave Power Amplifier chips is built.
Background technology
In microwave monolithic integrated circuit（MMIC）In, HEMT（HEMT）With its wide applicability into
For most important electron-like device in microwave frequency band.In the application of low noise circuit and power circuit, HEMT is shown
Superior device performance.With the continuous reduction of grid length, HEMT can obtain lower noise coefficient and Geng Gao cut-off frequency.
However, due to it at AlGaAs/GaAs heterojunction boundaries less conduction band discontinuity and two-dimensional electron gas（2DEG）With lining
Low potential barrier between bottom so that raceway groove is weaker to the limitation capability of carrier, and the electric current for flowing through device is relatively low.At present, lead to
Increase potential barrier frequently with breast is introduced in HEMT-structure with InGaAs channel layers, constitute PHEMT rate transistor
（pHEMT）.Compared with common HEMT device, pHEMT has significant advantage in terms of noise characteristic and power characteristic, from
And application widely is obtained in microwave frequency band.
In the plate G- Design of pHEMT tube core structures, the larger tube core of grid width is generally divided into several sections, by source electrode,
The shared mode of drain electrode composes in parallel the plate figure of tube core, and wherein grid is connected by the metal lead wire of tube core both sides respectively with drain electrode
And draw, and source electrode is then to be grounded after being connected by air bridges through through hole.During air bridges connection source electrode, traditional handicraft
By the way of directly connecting, air bridges will cross over adjacent grid and drain electrode when connecting source electrode, so as to introduce larger source
Parasitic capacitance between pole, grid between source electrode, drain electrode, makes tube core deteriorate in the working characteristics of microwave frequency band.And using straight
The air bridges connected mode of series connection is connect, end metal through hole will occupy the larger plate area of pictural surface, power is realized in Multi-core parallel connection
During synthesis, the waste of the plate area of pictural surface is more notable.
The content of the invention
In order to reduce the parasitic capacitance between source electrode, grid between source electrode, drain electrode, workability of the tube core in microwave frequency band is improved
Can, and the Multi-core plate area of pictural surface in parallel when reducing power combing, it is of the invention to propose the pHEMT microwaves that a kind of air bridges side is drawn
Power amplifier tube core transversary and pHEMT.
The pHEMT Microwave Power Amplifier tube core transversaries that the air bridges side is drawn, including 8 grid refer to 5 of parallel-connection structure it is shared
Source S a, Sb, Sc, Sd, Se, 8 grid G a, Gb, Gc, Gd, Ge, Gf, Gg, Gh, 4 shared drain D a, Db, Dc, Dd, pipe
8 grid G a of connection on the left of connection 4 drain Ds a, Db, Dc, Dd metal lead wire Md, tube core on the right side of core, Gb, Gc, Gd, Ge,
Annular ground through hole Va, Vb of 2 parallel die arrangements on the left of Gf, Gg, Gh metal lead wire Mg, tube core, draw from tube core left side
The connection grounding through hole Va and source S a, Sb, Sc air bridge structure Aa that go out and connection grounding through hole Vb and source S c, Sd,
Se air bridge structure Ab.
Tube core grid G a, Gb, Gc, Gd, Ge, Gf, Gg, Gh single finger widths are that 76um, length are 0.25um, source S a,
Sb, Sc, Sd, Se length are 18.6um, and drain D a, Db, Dc, Dd length are 18.6um, adjacent source and grid and leakage
The spacing of pole and grid is 2.2um.
Metal lead wire Md is outwards divided into connection lead Ld and conventional lead Nd two parts, metal lead wire Mg from tube core from tube core
Outwards it is divided into connection lead Lg, transition lead wire Tg and the parts of conventional lead Ng tri-；Connect lead Ld width 14um, connection lead Lg
Width 17um, transition lead wire Tg width 20um, length 82um, conventional lead Nd, Ng width 72um；Grounding through hole Va, Vb diameter
50um。
A kind of pHEMT of the pHEMT Microwave Power Amplifier tube core transversaries drawn using described air bridges side.
The beneficial effects of the present invention are：First, air bridges are drawn by side, air bridges no longer cross over grid and drain electrode, can
The parasitic capacitance between source electrode, drain electrode between source electrode, grid is effectively reduced, so as to improve service behaviour of the tube core in microwave frequency band；
Second, in power combing application, when Multi-core is in parallel, lateral metal throuth hole no longer influences the close arrangement of tube core, can save
The about plate area of pictural surface.
Brief description of the drawings
Fig. 1 is the pHEMT Microwave Power Amplifier tube core lateral junction compositions that air bridges side is drawn；
Fig. 2 is the pHEMT Microwave Power Amplifier tube core lateral junction compositions that air bridges side is drawn when Multi-core is in parallel；
Description of reference numerals：1st, 2,3,4,5 be respectively source S a, Sb, Sc, Sd, Se；6th, 7,8,9,10,11,12,13 points
Wei not grid G a, Gb, Gc, Gd, Ge, Gf, Gg, Gh；14th, 15,16,17 be respectively drain D a, Db, Dc, Dd；18th, metal lead wire
Md；19th, metal lead wire Mg；20th, 21 be respectively grounding through hole Va, Vb；22nd, 23 be respectively air bridge structure Aa, Ab；24th, 26 points
Lead Ld, Lg Wei not connected；25th, 28 be respectively conventional lead Nd, Ng；27th, transition lead wire.
Specific embodiment
The present invention is further illustrated with reference to the accompanying drawings and examples.
As shown in figure 1, the pHEMT Microwave Power Amplifier tube core transversaries that a kind of air bridges side is drawn, including 8 grid refer to parallel-connection structure
5 shared source S a 1, Sb 2, Sc 3, Sd 4, Se 5,8 grid G a 6, Gb 7, Gc 8, Gd 9, Ge 10, Gf
11st, Gg 12, Gh 13,4 shared drain D a 14, Db 15, Dc 16, Dd 17,4 drain D a 14 of tube core right side connection,
8 grid G a 6, Gb 7, Gc 8, Gd 9, Ge of connection on the left of Db 15, Dc 16, Dd 17 metal lead wire Md 18, tube core
10th, the annular ground through hole Va of 2 parallel die arrangements on the left of Gf 11, Gg 12, Gh 13 metal lead wire Mg 19, tube core
20th, Vb 21, the connection grounding through hole Va 20 and source S a 1 drawn from tube core left side, Sb 2, Sc 3 air bridge structure Aa
22 and connection grounding through hole Vb 21 and source S c 3, Sd 4, Se 5 air bridge structure Ab 23.
Tube core grid G a 6, Gb 7, Gc 8, Gd 9, Ge 10, Gf 11, Gg 12, Gh 13 single finger widths for 76um,
Length is 0.25um, and source S a 1, Sb 2, Sc 3, Sd 4, Se 5 length are 18.6um, drain D a 14, Db 15, Dc
16th, Dd 17 length is 18.6um, and the spacing of adjacent source and grid and drain electrode and grid is 2.2um.
Metal lead wire Md 18 is outwards divided into connection lead Ld 24 and the two parts of conventional lead Nd 25 from tube core, and metal draws
Line Mg 19 is outwards divided into connection lead Lg 26, transition lead wire Tg 27 and the parts of conventional lead Ng 28 3 from tube core；Connection is drawn
The width 14um of line Ld 24, connection lead Lg 26 width 17um, the width 20um of transition lead wire Tg 27, length 82um, conventional lead
Nd 25, the width 72um of Ng 28；Grounding through hole Va 20, the diameter 50um of Vb 21.
Fig. 2 is tube core in parallel in the pHEMT Microwave Power Amplifier tube core lateral junction compositions that air bridges side is drawn when Multi-core is in parallel, figure
Quantity is 3.Lateral metal throuth hole does not influence the close arrangement of tube core, makes the source electrode of the upper and lower ends of each tube core can be with
Adjacent tube core, which is realized, to be shared, to reduce the plate area of pictural surface of overall structure occupancy.
The pHEMT Microwave Power Amplifier tube core transversaries that described air bridges side is drawn, air bridges no longer cross over grid and drain electrode,
The parasitic capacitance between source electrode, drain electrode between source electrode, grid is effectively reduced, so as to improve workability of the tube core in microwave frequency band
Can, and in power combing application, when Multi-core is in parallel, lateral metal throuth hole no longer influences the close arrangement of tube core, saves
The plate area of pictural surface.
Claims (4)
1. the pHEMT Microwave Power Amplifier tube core transversaries that a kind of air bridges side is drawn, it is characterised in that：Refer to parallel-connection structure including 8 grid
5 shared source S a（1）、Sb（2）、Sc（3）、Sd（4）、Se（5）, 8 grid G a（6）、Gb（7）、Gc（8）、Gd（9）、
Ge（10）、Gf（11）、Gg（12）、Gh（13）, 4 shared drain D a（14）、Db（15）、Dc（16）、Dd（17）, tube core right side
Connect 4 drain D a（14）、Db（15）、Dc（16）、Dd（17）Metal lead wire Md（18）, 8 grid G a of tube core left side connection
（6）、Gb（7）、Gc（8）、Gd（9）、Ge（10）、Gf（11）、Gg（12）、Gh（13）Metal lead wire Mg（19）, 2, tube core left side
The annular ground through hole Va of parallel die arrangement（20）、Vb（21）, the connection grounding through hole Va drawn from tube core left side（20）With
Source S a（1）、Sb（2）、Sc（3）Air bridge structure Aa（22）And connection grounding through hole Vb（21）With source S c（3）、Sd
（4）、Se（5）Air bridge structure Ab（23）.
2. the pHEMT Microwave Power Amplifier tube core transversaries that a kind of air bridges side according to claim 1 is drawn, its feature exists
In：Tube core grid G a（6）、Gb（7）、Gc（8）、Gd（9）、Ge（10）、Gf（11）、Gg（12）、Gh（13）Single finger widths be 76
Micron, singly refer to length for 0.25 micron, source S a（1）、Sb（2）、Sc（3）、Sd（4）、Se（5）Length be 18.6 microns,
Drain D a（14）、Db（15）、Dc（16）、Dd（17）Length be 18.6 microns, the spacing of adjacent source and grid is micro- for 2.2
Rice, and the spacing of adjacent drain and grid is 2.2 microns.
3. the pHEMT Microwave Power Amplifier tube core transversaries that a kind of air bridges side according to claim 1 is drawn, its feature exists
In：Metal lead wire Md（18）Outwards it is divided into connection lead Ld from tube core（24）With conventional lead Nd（25）Two parts, metal lead wire
Mg（19）Outwards it is divided into connection lead Lg from tube core（26）, transition lead wire Tg（27）With conventional lead Ng（28）Three parts；Connection
Lead Ld（24）14 microns of width, connection lead Lg（26）17 microns of width, transition lead wire Tg（27）20 microns of width, length
82 microns of degree, conventional lead Nd（25）、Ng（28）72 microns of width；Grounding through hole Va（20）、Vb（21）50 microns of diameter.
4. a kind of pHEMT of the pHEMT Microwave Power Amplifier tube core transversaries drawn using air bridges side as claimed in claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510589789.3A CN105206590B (en) | 2015-09-17 | 2015-09-17 | PHEMT Microwave Power Amplifier tube core transversaries and pHEMT that air bridges side is drawn |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510589789.3A CN105206590B (en) | 2015-09-17 | 2015-09-17 | PHEMT Microwave Power Amplifier tube core transversaries and pHEMT that air bridges side is drawn |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105206590A CN105206590A (en) | 2015-12-30 |
| CN105206590B true CN105206590B (en) | 2017-11-03 |
Family
ID=54954169
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510589789.3A Active CN105206590B (en) | 2015-09-17 | 2015-09-17 | PHEMT Microwave Power Amplifier tube core transversaries and pHEMT that air bridges side is drawn |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105206590B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110676317B (en) * | 2019-09-30 | 2022-10-11 | 福建省福联集成电路有限公司 | Transistor tube core structure and manufacturing method |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005183770A (en) * | 2003-12-22 | 2005-07-07 | Mitsubishi Electric Corp | High frequency semiconductor device |
| US8962443B2 (en) * | 2011-01-31 | 2015-02-24 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Semiconductor device having an airbridge and method of fabricating the same |
| JP5733616B2 (en) * | 2011-04-21 | 2015-06-10 | 住友電工デバイス・イノベーション株式会社 | Semiconductor device |
| JP5821429B2 (en) * | 2011-09-01 | 2015-11-24 | 三菱電機株式会社 | Semiconductor device and manufacturing method thereof |
| US9219024B2 (en) * | 2013-11-21 | 2015-12-22 | Raytheon Company | Air bridge structure having dielectric coating |
-
2015
- 2015-09-17 CN CN201510589789.3A patent/CN105206590B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN105206590A (en) | 2015-12-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6338679B2 (en) | Semiconductor device and manufacturing method thereof | |
| JP6732715B2 (en) | Semiconductor device having stripe-shaped trench gate structure and gate connector structure | |
| CN101263599B (en) | Termination structure | |
| US20130248931A1 (en) | Nitride semiconductor device | |
| US8957528B2 (en) | Method and apparatus for reduced parasitics and improved multi-finger transistor thermal impedance | |
| CN105206590B (en) | PHEMT Microwave Power Amplifier tube core transversaries and pHEMT that air bridges side is drawn | |
| US10431525B2 (en) | Bond-over-active circuity gallium nitride devices | |
| CN110649096A (en) | High-voltage n-channel HEMT device | |
| US10553709B2 (en) | Heterojunction bipolar transistor | |
| CN103839982A (en) | Planar gate super-junction product gate layout structure | |
| CN204230242U (en) | A kind of LDMOS mmic chip based on HR-Si substrate | |
| CN202307903U (en) | Radio frequency-lateral double-diffused metal-oxide semiconductor (RF-LDMOS) device structure without epitaxial layer | |
| CN206947352U (en) | Hemt | |
| CN104078498A (en) | Trench isolation lateral insulated gate bipolar transistor | |
| CN103681809A (en) | Lateral bipolar transistor with composite structure | |
| WO2009139457A1 (en) | Semiconductor device | |
| CN104576716B (en) | The IGBT device and manufacture method of integrated super barrier rectifier | |
| CN205920974U (en) | Novel gaN base HEMT device of bars structure | |
| CN112086508A (en) | Low input capacitance GaN-based HEMT device | |
| WO2011060686A1 (en) | Ldmos power device | |
| CN105553262B (en) | A kind of method of raising DC/DC booster converter conversion efficiencies | |
| CN106788275A (en) | A kind of enhanced HEMT power amplifier circuits of cascade | |
| KR101590943B1 (en) | Super junction MOSFET which is ruggedness enhanced | |
| JP6222609B2 (en) | Monolithic microwave integrated circuit | |
| CN106452379B (en) | Cover the GaN mmic amplifier of C-Ku frequency range |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20180604 Address after: 310018 1-5, 199, 20 Avenue, Hangzhou economic and Technological Development Zone, Zhejiang. Patentee after: HANGZHOU LI'ANG DONGXIN MICROELECTRONIC CO., LTD. Address before: 310027 No. 38, Zhejiang Road, Hangzhou, Zhejiang, Xihu District Patentee before: Zhejiang University |
|
| TR01 | Transfer of patent right |