CN106452379B - Cover the GaN mmic amplifier of C-Ku frequency range - Google Patents
Cover the GaN mmic amplifier of C-Ku frequency range Download PDFInfo
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- CN106452379B CN106452379B CN201610833786.4A CN201610833786A CN106452379B CN 106452379 B CN106452379 B CN 106452379B CN 201610833786 A CN201610833786 A CN 201610833786A CN 106452379 B CN106452379 B CN 106452379B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/42—Amplifiers with two or more amplifying elements having their dc paths in series with the load, the control electrode of each element being excited by at least part of the input signal, e.g. so-called totem-pole amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/42—Modifications of amplifiers to extend the bandwidth
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/225—Indexing scheme relating to amplifiers the input circuit of an amplifying stage comprising an LC-network
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
- Microwave Amplifiers (AREA)
Abstract
The invention discloses a kind of GaN mmic amplifiers for covering C-Ku frequency range, are related to mmic amplifier technical field.The amplifier includes multistage amplifier circuit, it is attached between prime active device and rear class active device by matching network, the matching network includes capacitor C1-C4, resistance R1 and inductance L1, one end of the capacitor C3 is the input terminal of the matching network, the other end of the capacitor C3 is divided into two-way, the first via is successively grounded through capacitor C2, capacitor C1, resistance R1 is in parallel with capacitor C2, the node of the capacitor C1 and capacitor C2 is the output end of the matching network, and the second tunnel is successively grounded after inductance L1 and capacitor C4.The amplifier has widened the bandwidth of matching network, compensates for device with the roll off of gain of frequency, increases isolation between grade, improve the stability of amplifier.
Description
Technical field
The present invention relates to mmic amplifier technical field more particularly to a kind of GaN MMIC amplifications for covering C-Ku frequency range
Device.
Background technique
Broad stopband gallium nitride (GaN) semiconductor power device has the characteristics such as high temperature, high-power, anti-radiation, compares GaAs
(GaAs) there are higher breakdown voltage and higher electron saturation velocities and higher output power, power density to reach
10 times or more of GaAs, and high operating voltage can also effectively improve the efficiency of whole system.Furthermore SiC substrate has fabulous
Heat conductivity and high temperature resistance can work under 200 DEG C or more of hot environment.Therefore GaN semiconductor technology has become
The field that the inevitable development trend and electronic system of high-power technology are first developed.
Wideband power amplifer circuit topological structure is varied, when design mainly for the specific requirement of different circuits into
Row selection, can first is that meet the key technical indexes, this be main and most critical to principle；Second is that the size of chip size,
Reduce the size of chip as far as possible；Third is that the technique of component used can degree of realization.The gain of GaN HEMT microwave transistor with
The raising of frequency and decline, flat gain is obtained in entire frequency band, it is necessary to design have positive slope matching network carry out
Compensation.Power Monolithic Circuit designs the series that amplifier can be determined according to the gain requirement of circuit, according to output power and gain
Requirement determine total grid width at different levels, determine that the operating point of circuit optimizes according to indexs such as the efficiency of circuit.
Wideband power amplifer generally uses two kinds of structures: distributed amplifier (also referred to as travelling-wave amplifier) and having power consumption anti-
With amplifier.The advantages of distributed amplifier, can be achieved on broader frequency band, good standing-wave ratio, the disadvantage is that gain is lower, it is defeated
Power is limited by operating voltage out.The advantages of power consumption anti-adapter amplifier is output power height, and high gain, bandwidth can meet C-
Ku band operation bandwidth requirement.
Since GaN is in higher operating at voltages, the output equivalent resistance and equivalent capacity of device are larger compared with GaAs,
According to Bode-Fano principle, it can be deduced that, GaN matches broadband matching difficult to realize using conventional reactance.
Summary of the invention
It is described to put technical problem to be solved by the invention is to provide a kind of GaN mmic amplifier for covering C-Ku frequency range
Big device has widened the bandwidth of matching network, compensates for device with the roll off of gain of frequency, increases isolation between grade, improve and put
The stability of big device.
In order to solve the above technical problems, the technical solution used in the present invention is: a kind of GaN for covering C-Ku frequency range
Mmic amplifier, including multistage amplifier circuit are connected between preamplifying circuit and rear class amplifying circuit by matching network
It connects, it is characterised in that: the matching network includes capacitor C1-C4, resistance R1 and inductance L1, one end of the capacitor C3 are institute
The input terminal of matching network is stated, the other end of the capacitor C3 is divided into two-way, and the first via is successively grounded through capacitor C2, capacitor C1,
Resistance R1 is in parallel with capacitor C2, and the node of the capacitor C1 and capacitor C2 are the output end of the matching network, and the second tunnel is successively
It is grounded after inductance L1 and capacitor C4.
Preferably, the multistage amplifier circuit includes activated amplifier part, the grid and grid of the activated amplifier part
Between or grid refer to and the distance between refer to grid and successively decrease from the middle to both ends, and between the grid and grid of the application or grid refer to and grid
The distance between refer to and to be greater than between grid in the prior art and grid or grid refer to and the distance between refer to grid, so that grid and grid
Source item between pole or the width for leaking item successively decrease from the middle to both ends, or make grid refer to grid refer between source item or leak the width of item
Degree successively decreases from the middle to both ends.
Preferably, the activated amplifier part includes a grid, a drain electrode and 4 source items, and the grid includes 6
A grid refer to, the drain electrode includes three leakage items, and the grid refer to that interval is arranged, and source item interval is set between grid refer to, institute
State leakage item be located at the grid other than source refers to refer between and the outside that refers to of grid.
Preferably, the amplifier is amplified using three-stage cascade, pushing away than for 1:2:4 between every grade.
The beneficial effects of adopting the technical scheme are that the matching network in the amplifier is mainly in T-type
Original C-L-C T-type matching network is improved on the basis of matching network, forms series connection RC and parallel connection LC network, connect RC
Network can effectively reduce device low side gain, compensate device with the roll off of gain of frequency.It simultaneously can by series connection RC network
To reduce the quality factor of matching network, bandwidth is promoted, the stability of chip is improved.LC network in parallel is mainly solved by the C that connects
It is changed to after RC network and is formed by DC channel with inductance over the ground.
Due to widening grid-grid spacing using gradient type, the heat superposition of device is reduced, while reducing grid-grid spacing and widening
Influence to performance improves the heat dissipation of continuous wave, improves the continuous wave performance and long-term reliability of amplifier.
Detailed description of the invention
Fig. 1 is conventional band logical reactance matching network circuit schematic diagram；
Fig. 2 is the circuit diagram of amplifier described in the embodiment of the present invention；
Fig. 3 is the circuit diagram of matching network described in the embodiment of the present invention；
Fig. 4 is the structural schematic diagram of active amplification part in the prior art；
Fig. 5 is the structural schematic diagram of activated amplifier part described in the embodiment of the present invention；
Wherein: 1, grid 2, drain electrode 3, source item 11, grid refer to 21, leakage item 4, ground hole.
Specific embodiment
With reference to the attached drawing in the embodiment of the present invention, technical solution in the embodiment of the present invention carries out clear, complete
Ground description, it is clear that described embodiment is only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
In the following description, numerous specific details are set forth in order to facilitate a full understanding of the present invention, but the present invention can be with
Implemented using other than the one described here other way, those skilled in the art can be without prejudice to intension of the present invention
In the case of do similar popularization, therefore the present invention is not limited by the specific embodiments disclosed below.
As shown in Fig. 2, the embodiment of the invention discloses a kind of GaN mmic amplifier for covering C-Ku frequency range, including multistage
Amplifying circuit is attached between preamplifying circuit and rear class amplifying circuit by matching network, in the present embodiment, described
Amplifier is amplified using three-stage cascade, pushing away than for 1:2:4 between every grade.The embodiment of the present invention is mainly on T-type network foundation
Original C-L-C T-type matching network is improved, series connection RC and parallel connection LC network, the band logical reactance of the prior art are formed
Matching network circuit schematic diagram is as shown in Figure 1.
The embodiment of the present invention increases resistance R1 on the basis of Fig. 1 structure keeps it in parallel with capacitor C2, and forming RC has consumption
Distribution network, increase capacitor C4 connects with inductance L1 carries out direct current blocking, and specific match network topologies structure is as shown in Fig. 3.
Matching network between a second amplifying circuit and two three-stage amplifiers is all made of matching network shown in Fig. 3.
Specifically, as shown in figure 3, the matching network includes capacitor C1-C4, resistance R1 and inductance L1, the capacitor
One end of C3 is the input terminal of the matching network, and the other end of the capacitor C3 is divided into two-way, the first via successively through capacitor C2,
Capacitor C1 ground connection, resistance R1 is in parallel with capacitor C2, and the node of the capacitor C1 and capacitor C2 are the output end of the matching network,
Second tunnel is successively grounded after inductance L1 and capacitor C4.
Series connection RC network can effectively reduce device low side gain, compensate device with the roll off of gain of frequency.Lead to simultaneously
The quality factor of matching network can be reduced by crossing series connection RC network, promoted bandwidth, improved the stability of chip.LC network master in parallel
It solves to be changed to by the C that connects after RC network and is formed by DC channel with inductance over the ground.
In circuit design, for continuous wave application, it is necessary to consider the heat dissipation problem of chip.Conventional activated amplifier part knot
Structure is as shown in Fig. 4, and single die grid refer to-and grid refer to that spacing is smaller, its tube core junction temperature under continuous wave can be made higher, and since grid refer to
Between heat superposition so that the temperature rise highest that intermediate grid refer to.In order to reduce the device excessively high problem of junction temperature, this hair under continuous wave
Bright embodiment designs the activated amplifier part in the amplifier using structure as shown in Fig. 5, widens grid-using gradient type
Grid or grid refer to-and grid refer to the method for spacing increasing device gate-grid spacing or grid and refer to-and grid refer to spacing, the heat superposition of device is reduced, together
When reduce grid-grid spacing and widen influence to performance.It can be effective using the working junction temperature of attached layout structure device shown in fig. 5
50 DEG C or so are reduced, the continuous wave performance and long-term reliability of chip are greatly improved.
Specifically, between the grid and grid of the activated amplifier part or grid refer to grid the distance between refer to from centre to
Both ends are successively decreased, so that source item between grid and grid or leak the width of item and successively decrease from the middle to both ends, or grid are referred to and grid
The width of source item or leakage item between finger successively decreases from the middle to both ends.
More specifically, in one embodiment of the invention, as shown in figure 5, the activated amplifier part includes a grid
Pole 1,2 and 4 source items 3 of a drain electrode.The grid 1 includes that 6 grid refer to 11, and the drain electrode 2 includes three leakage items 21, described
Grid refer to that 11 intervals are arranged, and the grid that are set to that the leakage item 21 is spaced refer between 11 that the grid that the source item 3 is located at other than leakage item 21 refer to
Between 11 and grid refer to 11 outside.It should be pointed out that in the present embodiment grid refer to, source item and leak item number be one kind
Citing, specifically used how many needs are designed according to the actual conditions of device.
Claims (3)
1. a kind of GaN mmic amplifier for covering C-Ku frequency range, including multistage amplifier circuit, prime active device have with rear class
Be attached between the device of source by matching network, it is characterised in that: the matching network include capacitor C1-C4, resistance R1 with
And one end of inductance L1, the capacitor C3 are the input terminal of the matching network, the other end of the capacitor C3 is divided into two-way, the
It is successively grounded all the way through capacitor C2, capacitor C1, resistance R1 is in parallel with capacitor C2, and the node of the capacitor C1 and capacitor C2 are described
The output end of matching network, the second tunnel are successively grounded after inductance L1 and capacitor C4；
The multistage amplifier circuit includes activated amplifier part, between the grid and grid of the activated amplifier part or grid refer to
Grid the distance between refer to successively decrease from the middle to both ends, so that source item between grid and grid or leaking the width of item from centre to two
End is successively decreased, or make grid refer to grid refer between source item or leak item width successively decrease from the middle to both ends.
2. the GaN mmic amplifier of covering C-Ku frequency range as described in claim 1, it is characterised in that: the activated amplifier
Part includes a grid (1), a drain electrode (2) and 4 source items (3), and the grid (1) includes that 6 grid refer to (11), the leakage
Pole (2) include three leakage items (21), the grid refer to (11) interval setting, it is described leakage item (21) be spaced be set to grid refer to (11) it
Between, the grid that the source item (3) is located at other than leakage item (21) refer between (11) and grid refer to the outside of (11).
3. the GaN mmic amplifier of covering C-Ku frequency range as described in claim 1, it is characterised in that: the amplifier uses
Three-stage cascade amplification, pushing away than for 1:2:4 between every grade.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610833786.4A CN106452379B (en) | 2016-09-20 | 2016-09-20 | Cover the GaN mmic amplifier of C-Ku frequency range |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610833786.4A CN106452379B (en) | 2016-09-20 | 2016-09-20 | Cover the GaN mmic amplifier of C-Ku frequency range |
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| CN106452379A CN106452379A (en) | 2017-02-22 |
| CN106452379B true CN106452379B (en) | 2019-03-22 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1158660A1 (en) * | 2000-05-25 | 2001-11-28 | Alcatel | Double balanced mixer in MMIC |
| WO2010003865A1 (en) * | 2008-07-09 | 2010-01-14 | Nxp B.V. | Doherty amplifier with input network optimized for mmic |
| CN103681834A (en) * | 2012-09-21 | 2014-03-26 | 富士通株式会社 | Compound semiconductor device and method for manufacturing the same |
| US9356564B1 (en) * | 2014-03-27 | 2016-05-31 | Hrl Laboratories, Llc | Broadband linear amplifier architecture by combining two distributed amplifiers |
-
2016
- 2016-09-20 CN CN201610833786.4A patent/CN106452379B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1158660A1 (en) * | 2000-05-25 | 2001-11-28 | Alcatel | Double balanced mixer in MMIC |
| WO2010003865A1 (en) * | 2008-07-09 | 2010-01-14 | Nxp B.V. | Doherty amplifier with input network optimized for mmic |
| CN103681834A (en) * | 2012-09-21 | 2014-03-26 | 富士通株式会社 | Compound semiconductor device and method for manufacturing the same |
| US9356564B1 (en) * | 2014-03-27 | 2016-05-31 | Hrl Laboratories, Llc | Broadband linear amplifier architecture by combining two distributed amplifiers |
Non-Patent Citations (5)
| Title |
|---|
| AlGaN-GaN mixer MMICs, and RF front-end receivers for C-, Ku-, and Ka-band space applications;Do M N, et al.;《Microwave Integrated Circuits Conference. IEEE》;20100928;57-60 |
| C-Ku band ultra broadband GaN MMIC amplifier with 20W output power;Kuwata,et al.,;《 Asia-Pacific Microwave Conference (APMC) 》;20111208;1558-1561 |
| GaN高电子迁移率晶体管特性及其功率放大器研究;冷永清;《中国博士学位论文全文数据库信息科技辑（月刊）》;20140115(第01期);I135-35 |
| Over 10W C-Ku Band GaN MMIC Non-uniform Distributed Power Amplifier with Broadband Couplers;Masuda,et al.,;《IEEE MTT-S International Microwave Symposium Digest》;20100528;1388-1391 |
| 超宽带GaN HEMT功率放大器研究;李成龙，;《中国优秀硕士学位论文全文数据库信息科技辑（月刊）》;20150215(第02期);I135-294 |
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| CN106452379A (en) | 2017-02-22 |
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