CN105206564B - A kind of production method and array substrate of light shield layer - Google Patents
A kind of production method and array substrate of light shield layer Download PDFInfo
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- CN105206564B CN105206564B CN201510528836.3A CN201510528836A CN105206564B CN 105206564 B CN105206564 B CN 105206564B CN 201510528836 A CN201510528836 A CN 201510528836A CN 105206564 B CN105206564 B CN 105206564B
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- light shield
- array substrate
- shield layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
Abstract
A kind of production method the invention discloses light shield layer includes: offer array basal plate；Photosensitive photoresist is applied on the array substrate back side；The good metallic mold for nano-imprint of pre-production is fitted on the array substrate back side, so that the photosensitive photoresist is filled on the cavity on the metallic mold for nano-imprint；The array substrate back side coated with the photosensitive photoresist is exposed, the photosensitive photoresist in the cavity is solidificated on the array substrate back side；The photosensitive photoresist of the cavity exterior domain is removed, to form light shield layer.The cost of manufacture of light shield layer can be effectively reduced in the present invention, and can improve because light shield layer side slope leads to electrically bad problem.
Description
[technical field]
The present invention relates to field of display technology, in particular to the production method and array substrate of a kind of light shield layer.
[background technique]
In low-temperature polysilicon film transistor (LTPS-TFT) technique, because of polysilicon (p-Si) mobility (30-
It is 300cm2/vs) higher, it is illuminated by the light influence, TFTIoff (off-state current) can become larger, and it is bad to eventually lead to display.Referring to Fig. 1,
To improve this situation, LS (Line Shied Layer, light shield layer) generally is used in the industry, i.e., light shield layer 10 is arranged in glass base
20 top of plate, carries out light for the p-Si (polysilicon) to TFT channel and blocks.Referring to Fig. 2, but since light shield layer side slope is deposited
, in side slope position, subsequent amorphous silicon also will form side slope when forming a film, during subsequent ELA (excitation state laser annealing),
This side slope may cause the uneven of polycrystallization, and if side slope 1 leads to the generation of side slope 3, the possible crystallization of ELA is uneven at side slope 3, most
It causes to show eventually bad.
Therefore, it is necessary to propose a kind of new technical solution, to solve the above technical problems.
[summary of the invention]
The purpose of the present invention is to provide a kind of production method of light shield layer and array substrates, it is intended to solve in the prior art
It is existing due to light shield layer side slope exist, in side slope position, subsequent amorphous silicon form a film when also will form side slope, in subsequent ELA
During (excitation state laser annealing), this side slope may cause the uneven of polycrystallization, ultimately causes and shows bad problem.
To solve the above problems, technical scheme is as follows:
The present invention provides a kind of production method of light shield layer, and the production method of the light shield layer includes:
Array basal plate is provided；
Photosensitive photoresist is applied on the array substrate back side；
The good metallic mold for nano-imprint of pre-production is fitted on the array substrate back side, so that the photosensitive photoresist is filled out
It is charged on the cavity on the metallic mold for nano-imprint；
The array substrate back side coated with the photosensitive photoresist is exposed, it will be described photosensitive in the cavity
Photoresist is solidificated on the array substrate back side；
The photosensitive photoresist of the cavity exterior domain is removed, to form light shield layer.
Preferably, in the production method of the light shield layer, the offer array basal plate the step of after, also wrap
It includes:
The first alignment mark is made on the array substrate back side；
First alignment mark, for being carried out with the second alignment mark on the glass with the metallic mold for nano-imprint
Contraposition.
Preferably, in the production method of the light shield layer, first alignment mark is set to the array substrate
At four corner locations at the back side.
Preferably, in the production method of the light shield layer, the step of making the metallic mold for nano-imprint, comprising:
One glass is provided,
The metallic mold for nano-imprint is made on the glass, the metallic mold for nano-imprint has sky arranged in arrays
Chamber.
Preferably, in the production method of the light shield layer,
The second alignment mark is made on the glass with the metallic mold for nano-imprint；
Second alignment mark, for being aligned with the first alignment mark in the array substrate.
Preferably, in the production method of the light shield layer, the photosensitive photoresist is liquid photocurable Ink material.
Preferably, in the production method of the light shield layer, the metallic mold for nano-imprint fitting that pre-production is good
Step on the array substrate back side, comprising:
The second alignment mark on the glass is aligned with the first alignment mark in the array substrate, by institute
Metallic mold for nano-imprint is stated to be fitted on the array substrate back side.
Preferably, in the production method of the light shield layer, the described pair of array coated with the photosensitive photoresist
The step of substrate back is exposed, comprising:
UV exposure is carried out to the array substrate back side coated with the photosensitive photoresist.
Preferably, in the production method of the light shield layer, the photosensitive light of the removal cavity exterior domain
Resistance, the step of to form light shield layer, comprising:
Using chemical lotion or etch process, the photosensitive photoresist of the cavity exterior domain is removed, to form light shield layer.
The present invention also provides a kind of array substrate, the array substrate includes:
One light shield layer carries out light for the polysilicon to channel and blocks；
One glass substrate is set to above the light shield layer；
One laying is set to above the glass substrate；
One dielectric layer is set to above the laying；
One channel layer is set to above the dielectric layer, and the channel layer includes the polysilicon of channel；
One gate insulating layer is set to above the channel layer；
One the first metal layer is set to above the gate insulating layer, is used to form grid；
One separation layer is set to above the first metal layer, for the first metal layer and second metal layer to be isolated；
One ohmic contact layer is set to above the separation layer；
One second metal layer is set to above the ohmic contact layer, is used to form the source electrode and drain electrode.
Compared with the prior art, by using nanometer embossing, and light shield layer is made using the Ink material of photocuring,
The cost of manufacture of light shield layer in original TFT processing procedure can effectively be saved；Due to being arranged light shield layer on the array substrate back side,
The problem that can effectively avoid light shield layer side slope injustice from causing a-Si crystallization bad.
For above content of the invention can be clearer and more comprehensible, preferred embodiment is cited below particularly, and cooperate institute's accompanying drawings, makees
Detailed description are as follows.
[Detailed description of the invention]
Fig. 1 is the structural schematic diagram for the array substrate that the prior art provides；
Fig. 2 is that there are the structural schematic diagrams of side slope for the light shield layer that provides of the prior art；
Fig. 3 is the implementation process schematic diagram of the production method for the light shield layer that the embodiment of the present invention one provides；
Fig. 4 is the implementation process schematic diagram of the production method of light shield layer provided by Embodiment 2 of the present invention；
Fig. 5 is the structural schematic diagram provided in an embodiment of the present invention that the first alignment mark is made on the array substrate back side；
Fig. 6 is the knot provided in an embodiment of the present invention that the second alignment mark and metallic mold for nano-imprint are made on quartz glass
Structure schematic diagram；
Fig. 7 is the structural schematic diagram that array substrate provided in an embodiment of the present invention is bonded with metallic mold for nano-imprint；
Fig. 8 is the structural schematic diagram of array substrate provided in an embodiment of the present invention.
[specific embodiment]
The word " embodiment " used in this specification means serving as example, example or illustration.In addition, this specification and institute
The article " one " used in attached claim can generally be interpreted to mean " one or more ", unless specified otherwise or
Guiding singular is understood from context.
In the present invention, using nanometer embossing, and light shield layer is made using the Ink material of photocuring, it can be effective
Save the cost of manufacture of light shield layer in original TFT processing procedure；It, can be effective due to being arranged light shield layer on the array substrate back side
The problem for avoiding light shield layer side slope injustice from causing a-Si crystallization bad.
In order to illustrate technical solutions according to the invention, the following is a description of specific embodiments.
Embodiment one
Referring to Fig. 3, being the implementation process of the production method for the light shield layer that the embodiment of the present invention one provides, mainly include
Following steps:
In step s101, array basal plate is provided；
In embodiments of the present invention, the array substrate is to have made grid, the source electrode of thin film transistor
And drain electrode.
In step s 102, photosensitive photoresist is applied on the array substrate back side；
In embodiments of the present invention, under light action polymerizing curable occurs for the photosensitive photoresist, can prevent penetrating for light.It is excellent
Choosing, the present embodiment is using liquid photocurable Ink material as the photosensitive photoresist.
In step s 103, the good metallic mold for nano-imprint of pre-production is fitted on the array substrate back side, so that
The photosensitive photoresist is filled on the cavity on the metallic mold for nano-imprint；
In step S104, the array substrate back side coated with the photosensitive photoresist is exposed, by the sky
The photosensitive photoresist in chamber is solidificated on the array substrate back side；
In embodiments of the present invention, UV exposure is carried out to the array substrate back side coated with the photosensitive photoresist, it will
The photosensitive photoresist in the cavity is solidificated on the array substrate back side.
In step s105, the photosensitive photoresist of the cavity exterior domain is removed, to form light shield layer.
In embodiments of the present invention, using techniques such as chemical lotion or etchings, the sense of the cavity exterior domain is removed
Light photoresist, to form light shield layer.
Embodiment two
Referring to Fig. 4, the implementation process of the production method for light shield layer provided by Embodiment 2 of the present invention, mainly includes
Following steps:
In step s 201, array basal plate is provided；
In embodiments of the present invention, the array substrate is to have made grid, the source electrode of thin film transistor
And drain electrode.
In step S202, the first alignment mark is made on the array substrate back side；
In embodiments of the present invention, referring to Fig. 5, making the on the array substrate back side to be provided in an embodiment of the present invention
The structural schematic diagram of one alignment mark；The first alignment mark 10 is made on the array substrate back side；First register guide
Note 10, for being aligned with the second alignment mark on the glass with the metallic mold for nano-imprint.Preferably, in this implementation
In example, first alignment mark 10 is set at four corner locations at the array substrate back side.It is appreciated, however, that
Be, can also at one of them or two corner locations at the array substrate back side setting first alignment mark 10, as long as
Contraposition effect can be played.
In step S203, a glass is provided, the metallic mold for nano-imprint, the nano impression are made on the glass
Mold has cavity arranged in arrays；
In embodiments of the present invention, using yellow light process, the metallic mold for nano-imprint is made on quartz glass, it is described to receive
Rice imprint mold has cavity arranged in arrays；Wherein, the cavity is the filling of light shield layer liquid photocurable Ink material
Chamber is transmission region at the cavity, and the other positions in addition to the second alignment mark are light tight region.
In step S204, the second alignment mark is made on the glass with the metallic mold for nano-imprint；
In embodiments of the present invention, referring to Fig. 6, making second pair on quartz glass to be provided in an embodiment of the present invention
The structural schematic diagram of position label and metallic mold for nano-imprint；The second register guide is made on the glass with the metallic mold for nano-imprint
Note 20；Second alignment mark 20, for being aligned with the first alignment mark 10 in the array substrate.Preferably,
In the present embodiment, second alignment mark 20 is set to four sides on the glass with the metallic mold for nano-imprint
Angular position, wherein second alignment mark 20 of four corners respectively with four corners at the array substrate back side
First alignment mark 10 corresponds.It is understood, however, that can also be on the glass with the metallic mold for nano-imprint
One of them or two corner locations at setting second alignment mark 20, as long as contraposition effect can be played.
In step S205, photosensitive photoresist is applied on the array substrate back side；
In embodiments of the present invention, under light action polymerizing curable occurs for the photosensitive photoresist, can prevent penetrating for light.It is excellent
Choosing, the present embodiment is using liquid photocurable Ink material as the photosensitive photoresist.
In step S206, by the second alignment mark on the glass and the first alignment mark in the array substrate
It is aligned, the metallic mold for nano-imprint is fitted on the array substrate back side, so that the photosensitive photoresist is filled into institute
It states on the cavity on metallic mold for nano-imprint；
Referring to Fig. 7, the structural schematic diagram being bonded for array substrate provided in an embodiment of the present invention with metallic mold for nano-imprint；
The second alignment mark 20 on the glass is aligned with the first alignment mark 10 in the array substrate, is received described
Rice imprint mold is fitted on the array substrate back side, so that the photosensitive photoresist is filled on the metallic mold for nano-imprint
On cavity.
In step S207, UV exposure is carried out to the array substrate back side coated with the photosensitive photoresist, it will be described
The photosensitive photoresist in cavity is solidificated on the array substrate back side；
In step S208, using techniques such as chemical lotion or etchings, the photosensitive light of the cavity exterior domain is removed
Resistance, to form light shield layer.
Referring to Fig. 8, being the structural schematic diagram of array substrate provided in an embodiment of the present invention.For ease of description, only show
Part related to the embodiment of the present invention is gone out.
The array substrate includes: a light shield layer 100, a glass substrate 101, a laying 102, a dielectric layer 103, one
Channel layer 104, a gate insulating layer 105, a first metal layer 106, a separation layer 107, an ohmic contact layer 108, Yi Jiyi
Second metal layer 109.Wherein, light shield layer 100 is used to carry out light to the polysilicon of channel to block；The glass substrate 101 is arranged
Above the light shield layer 100；Laying 102 is set to above the glass substrate；Dielectric layer 103 is set to the laying
102 tops；Channel layer 104 is set to 103 top of dielectric layer, and the channel layer 104 includes the polysilicon of channel；Grid is exhausted
Edge layer 105 is set to 104 top of channel layer；The first metal layer 106 is set to 105 top of gate insulating layer, is used for
Form grid；Separation layer 107 is set to 106 top of the first metal layer, for the first metal layer and the second gold medal to be isolated
Belong to layer；Ohmic contact layer 108 is set to 107 top of separation layer；Second metal layer 109 is set to the ohmic contact layer
108 tops, are used to form the source electrode and drain electrode.
In embodiments of the present invention, the channel layer 104 marks that layer of N+, it is understood, however, that N+, N- only make
Example, however it is not limited to the embodiment of the present invention.Wherein, source electrode and drain electrode pass through separation layer on via hole respectively with the both ends of channel layer
It is connected, separation layer is made of materials such as the silicon nitrides being electrically insulated, and grid is made to be electrically insulated with source-drain electrode.Grid and scan line
It is connected, source electrode or drain electrode are connected with data line.
In conclusion making light shield layer using nanometer embossing, and using the Ink material of photocuring, can effectively save
Save the cost of manufacture of light shield layer in original TFT processing procedure；Due to being arranged light shield layer on the array substrate back side, can effectively keep away
Exempt from the problem that light shield layer side slope injustice causes a-Si crystallization bad.
Although the present invention, those skilled in the art have shown and described relative to one or more implementations
It will be appreciated that equivalent variations and modification based on the reading and understanding to the specification and drawings.The present invention includes all such repairs
Change and modification, and is limited only by the scope of the following claims.In particular, to various functions executed by the above components, use
It is intended to correspond in the term for describing such component and executes the specified function of the component (such as it is functionally of equal value
) random component (unless otherwise instructed), even if in structure with execute the exemplary of this specification shown in this article and realize
The open structure of function in mode is not equivalent.In addition, although the special characteristic of this specification is relative to several realization sides
Only one in formula is disclosed, but this feature can with such as can be for a given or particular application expectation and it is advantageous
One or more other features combinations of other implementations.Moreover, with regard to term " includes ", " having ", " containing " or its deformation
For being used in specific embodiments or claims, such term is intended to wrap in a manner similar to the term " comprising "
It includes.
In conclusion although the present invention has been disclosed above in the preferred embodiment, but above preferred embodiment is not to limit
The system present invention, those skilled in the art can make various changes and profit without departing from the spirit and scope of the present invention
Decorations, therefore protection scope of the present invention subjects to the scope of the claims.
Claims (9)
1. a kind of production method of light shield layer, which is characterized in that the production method of the light shield layer includes:
Array basal plate is provided, the array substrate front includes a channel layer；
Photosensitive photoresist is applied on the array substrate back side；Under light action polymerizing curable occurs for the photosensitive photoresist, can hinder
Only light penetrates, wherein using liquid photocurable Ink material as the photosensitive photoresist；
The good metallic mold for nano-imprint of pre-production is fitted on the array substrate back side, so that the photosensitive photoresist is filled into
On cavity on the metallic mold for nano-imprint；It is transmission region at the cavity, other positions are light tight region；
The array substrate back side coated with the photosensitive photoresist is exposed, by the photosensitive photoresist in the cavity
It is solidificated on the array substrate back side；
The photosensitive photoresist of the cavity exterior domain is removed, to form light shield layer, wherein the position of the light shield layer corresponds to institute
State the position of channel layer.
2. the production method of light shield layer according to claim 1, which is characterized in that provide the step of array basal plate described
After rapid, further includes:
The first alignment mark is made on the array substrate back side；
First alignment mark, for being carried out pair with the second alignment mark on the glass with the metallic mold for nano-imprint
Position.
3. the production method of light shield layer according to claim 2, which is characterized in that first alignment mark is set to institute
It states at four corner locations at the array substrate back side.
4. the production method of light shield layer according to claim 1 or 2, which is characterized in that make the metallic mold for nano-imprint
The step of, comprising:
One glass is provided,
The metallic mold for nano-imprint is made on the glass, the metallic mold for nano-imprint has cavity arranged in arrays.
5. the production method of light shield layer according to claim 4, which is characterized in that
The second alignment mark is made on the glass with the metallic mold for nano-imprint；
Second alignment mark, for being aligned with the first alignment mark in the array substrate.
6. the production method of light shield layer according to claim 5, which is characterized in that the nanometer pressure that pre-production is good
Stamp has the step being fitted on the array substrate back side, comprising:
The second alignment mark on the glass is aligned with the first alignment mark in the array substrate, is received described
Rice imprint mold is fitted on the array substrate back side.
7. the production method of light shield layer according to claim 1, which is characterized in that described pair is coated with the photosensitive photoresist
Array substrate back side the step of being exposed, comprising:
UV exposure is carried out to the array substrate back side coated with the photosensitive photoresist.
8. the production method of light shield layer according to claim 1, which is characterized in that the removal cavity exterior domain
The photosensitive photoresist, the step of to form light shield layer, comprising:
Using chemical lotion or etch process, the photosensitive photoresist of the cavity exterior domain is removed, to form light shield layer.
9. a kind of array substrate, which is characterized in that the array substrate includes:
One light shield layer carries out light for the polysilicon to channel and blocks；Wherein, the light shield layer is using such as claim 1 to 8
Made of the production method of described in any item light shield layers；
One glass substrate is set to above the light shield layer；
One laying is set to above the glass substrate；
One dielectric layer is set to above the laying；
One channel layer is set to above the dielectric layer, and the channel layer includes the polysilicon of channel, wherein the channel layer
Position corresponds to the position of the light shield layer；
One gate insulating layer is set to above the channel layer；
One the first metal layer is set to above the gate insulating layer, is used to form grid；
One separation layer is set to above the first metal layer, for the first metal layer and second metal layer to be isolated；
One ohmic contact layer is set to above the separation layer；
One second metal layer is set to above the ohmic contact layer, is used to form a source electrode and a drain electrode.
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| CN1744293A (en) * | 2004-09-03 | 2006-03-08 | 台湾薄膜电晶体液晶显示器产业协会 | Method for manufacturing thin film transistor and its structure |
| US20070090365A1 (en) * | 2005-10-20 | 2007-04-26 | Canon Kabushiki Kaisha | Field-effect transistor including transparent oxide and light-shielding member, and display utilizing the transistor |
| WO2012050006A1 (en) * | 2010-10-12 | 2012-04-19 | シャープ株式会社 | Array substrate and method for manufacturing same |
| JP2013140371A (en) * | 2013-02-04 | 2013-07-18 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
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2015
- 2015-08-25 CN CN201510528836.3A patent/CN105206564B/en active Active
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1744293A (en) * | 2004-09-03 | 2006-03-08 | 台湾薄膜电晶体液晶显示器产业协会 | Method for manufacturing thin film transistor and its structure |
| US20070090365A1 (en) * | 2005-10-20 | 2007-04-26 | Canon Kabushiki Kaisha | Field-effect transistor including transparent oxide and light-shielding member, and display utilizing the transistor |
| WO2012050006A1 (en) * | 2010-10-12 | 2012-04-19 | シャープ株式会社 | Array substrate and method for manufacturing same |
| JP2013140371A (en) * | 2013-02-04 | 2013-07-18 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
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Effective date of registration: 20210309 Address after: No.109, Kangping Road, Liuyang economic and Technological Development Zone, Changsha, Hunan 410300 Patentee after: Changsha Huike optoelectronics Co., Ltd Address before: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Patentee before: TCL Huaxing Photoelectric Technology Co.,Ltd. |